CN108998762A - A kind of uvioresistant plating Cu/Al2O3The automobile adhesive film and preparation method of nano-multilayer film - Google Patents

A kind of uvioresistant plating Cu/Al2O3The automobile adhesive film and preparation method of nano-multilayer film Download PDF

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Publication number
CN108998762A
CN108998762A CN201810784097.8A CN201810784097A CN108998762A CN 108998762 A CN108998762 A CN 108998762A CN 201810784097 A CN201810784097 A CN 201810784097A CN 108998762 A CN108998762 A CN 108998762A
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film
sputtering
target
nano
single layer
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余兴亮
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HAIAN HAOCHI SCIENCE & TECHNOLOGY Co Ltd
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HAIAN HAOCHI SCIENCE & TECHNOLOGY Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/081Oxides of aluminium, magnesium or beryllium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/20Metallic material, boron or silicon on organic substrates
    • C23C14/205Metallic material, boron or silicon on organic substrates by cathodic sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to automobile adhesive film technical fields, are related to a kind of uvioresistant plating Cu/Al2O3The automobile adhesive film and preparation method of nano-multilayer film.Material of the invention includes Cu thin-film material and Al2O3Thin-film material, the two carry out alternately superposition by magnetron sputtering method, form class superlattice structure.The general structure of material of the invention is [Cu (a) nm/Al2O3(b) nm] x, a, b respectively indicate the single layer Cu film and single layer Al in formula2O3The thickness of film, 50≤a≤90nm, 10≤b≤50nm, x indicate single layer Al2O3With the alternate cycle number of the single layer Cu film or alternately number of plies, and x is positive integer.The overall thickness of film can be by x and the single layer Al2O3Obtained by THICKNESS CALCULATION with single layer Cu film, i.e., [(a+b) * x] (nm).Cu/Al of the invention2O3The overall thickness of multi-layer compound film is about 1000nm, at this time (a+b) * x ≈ 1000 (nm).Cu/Al of the invention2O3Multi-layer compound film heat-insulated rate with higher, preferable ultraviolet reflection rate, lower mist degree and higher visible light transmittance, are suitable for automobile heat insulation pad pasting.

Description

A kind of uvioresistant plating Cu/Al2O3The automobile adhesive film of nano-multilayer film and preparation Method
Technical field
The present invention relates to automobile adhesive film technical fields more particularly to a kind of uvioresistant to plate Cu/Al2O3Nano-multilayer film Automobile adhesive film and preparation method.
Background technique
Automobile heat insulation film is divided into forward and backward film and the side block wind film of keeping out the wind.Wherein, thermal isolation film is required highest to be front windshield Glass.According to the regulation of state ministry of public security traffic safety code, the light transmittance of front windshield has to be larger than 70%, not influence Premised on traffic safety.Front windshield is most abstained to paste dark thermal isolation film.In addition, in the uvioresistant index of selection thermal isolation film When, the higher the better, because console components can be protected, prevents by sun long-term irradiation premature aging.In addition, it can also subtract Few car article and personnel damage caused by irradiating because of ultraviolet light, reflective by physics, reduce vehicle interior temperature, and it is empty to reduce automobile The use of tune saves a part spending to reduce oil consumption.
New car pad pasting not only helps heat-insulated, moreover it is possible to weaken solar glare on daytime, night plays anti-dazzle effect.Before especially Windshield pad pasting, summer being exposed to the sun to avoid front sunlight, prevent skin tanned.It is glued further, since thermal isolation film has Continuous cropping is used, and vehicle glass can be sticked together just in case broken if, injury of the reduction to human body, this namely explosion-proof function.
Since people observe the spectrum used mainly from visible spectrum, wave-length coverage 400~700nm or so, and heat master Concentrate on infrared wavelength range 700nm or more.For that purpose it is necessary to be effectively improved on the basis of not reducing visible light transmittance red The reflectivity in outer smooth region.
The transparent coating to be formed is prepared using nanometer heat insulation material, wherein nano conducting powders contain certain density electronics Hole can cause the absorption of free carrier, be in particular in solar spectrum, wavelength 380~760nm visible region, Film light transmittance is unaffected;For wavelength in the ultraviolet range for being less than 380nm, film absorptivity is 90% or so;Wavelength 760~ The near infrared region of 2500nm causes since the frequency of sun incident light is higher than the vibration frequency of nano conducting powders in film The high reflection of its ion plays reflection barrier action to the solar energy for being distributed in infrared band, to reach transparent heat-insulated effect Fruit.
Magnetron sputtering film method becomes present pad pasting due to having taken into account such as high thermal insulation, height every UV resistance Mainstream manufacturing process, while this film is also more graceful to the feeling of people, comfortable pleasant.Film surface metal oxide film Effect be shading, resisting ultraviolet radiation, not only extended the shelf-life of content, but also improve the brightness of film, it may have valence Honest and clean, beautiful and preferable thermal resistance separating performance, and there is good mechanical performance.Multi-layer compound film can improve single film layer institute Existing deficiency.Due to the compatibility of ingredient and structure, the binding force of film and matrix is not only increased, also a series of spies of bring Different performance, such as wear-resisting erosion resistance, thermal fatigue resistance and thermal shock, lower thermal conductivity.
Summary of the invention
Aiming at the shortcomings in the prior art, it is able to solve to exist in the prior art the object of the present invention is to provide one kind and ask Topic, by the special efficacy of plural layers, effectively improves sun-proof, the heat-insulated and uvioresistant effect of vehicle glass, to change Environment in kind automobile, energy conservation and the automobile for protecting the uvioresistant of the purpose of skin to plate Cu/Al2O3 nano-multilayer film paste Film and preparation method.
The present invention discloses one kind first deposited Cu/Al2O3The polyethylene terephthalate of multi-layer compound film (PET) material, the Cu/Al2O3Cu film and Al in multi-layer compound film material2O3Film is alternately arranged, wherein single layer Cu Film with a thickness of 50~90nm, single layer Al2O3Film with a thickness of 10~50nm, the Cu/Al2O3Multi-layer compound film is total With a thickness of 1000nm.
Cu of the present invention indicates the Cu ingredient in the thin-film material;Al2O3Indicate the Al in the thin-film material2O3Ingredient.
To achieve the above object, the present invention adopts the following technical scheme:
Cu/Al of the invention2O3Multi-layer compound film passes through magnetron sputtering alternating deposit Cu and Al2O3Layer, in nanometer amount Grade is combined.
Cu/Al of the invention2O3Multi-layer compound film, single layer Cu film and single layer Al therein2O3Film is alternately arranged into Multi-layer film structure, and the thickness range of single layer Cu film is 50~90nm, single layer Al2O3The thickness range of film is 10~50nm.
Cu/Al of the invention2O3The structure of multi-layer compound film meets general formula: [Cu (a) nm/ Al2O3(b) nm] x, A, b respectively indicate the single layer Cu film and single layer Al in formula2O3The thickness of film, 50≤a≤90nm, 10≤b≤50nm, X indicates single layer Al2O3With the alternate cycle number of the single layer Cu film or alternately number of plies, and x is positive integer.The overall thickness of film can By x and the single layer Al2O3Obtained by THICKNESS CALCULATION with single layer Cu film, i.e., [(a+b) * x] (nm).Cu/Al of the invention2O3 The overall thickness of multi-layer compound film is about 1000nm, at this time (a+b) * x ≈ 1000 (nm).
Cu/Al of the present invention2O3Multi-layer compound film is prepared using magnetically controlled sputter method, and substrate uses PET material, Sputtering target material is Cu and Al2O3, sputter gas is high-purity Ar gas.
Preferably, the Cu and Al2O3The purity of target is in 99.999% or more atomic percent, and background vacuum is not Greater than 3 × 10-4Pa。
Preferably, the Cu target and Al2O3Target is all made of radio-frequency power supply, and sputtering power is 245-255W;It splashes Penetrating power is preferably 250W.
Preferably, the purity of the Ar gas is 99.999% or more percent by volume, gas flow 75-85SCCM splashes Pressure of emanating is 0.65~0.75Pa;Preferably, the gas flow is 80SCCM, sputtering pressure 0.70Pa.
It is optimal, Cu/Al of the present invention2O3The thickness of multi-layer compound film can be regulated and controled by sputtering time.
Cu/Al of the present invention2O3The preparation process of multi-layer compound film material specifically includes the following steps:
1) PET material is cleaned;
2) sputtering target material is installed;Set sputtering power, setting sputtering Ar throughput and sputtering pressure;
3) Cu/Al is prepared using room temperature magnetically controlled sputter method2O3Multi-layer compound film material;
A) space base support is rotated into Cu target position, opens the radio-frequency power supply on Cu target, according to setting sputtering time (such as 300s), start to sputter Cu target material surface, clean Cu target position surface;
B) after the completion of Cu target position surface cleaning, the radio-frequency power supply applied on Cu target position is closed, space base support is rotated to Al2O3Target position opens Al2O3Radio-frequency power supply on target starts according to the sputtering time (such as 400s) of setting to Al2O3Target table Face is sputtered, and Al is cleaned2O3Target position surface;
c)Al2O3After the completion of target position surface cleaning, substrate to be sputtered is rotated into Cu target position, opens penetrating on Cu target position Frequency power starts to sputter Cu film according to the sputtering time of setting;
D) after the completion of Cu thin film sputtering, the radio-frequency power supply applied on Cu target is closed, substrate is rotated into Al2O3Target position is opened Open Al2O3Target position radio-frequency power supply starts to sputter Al according to the sputtering time of setting2O3Film;
E) c) and d) two step is repeated, i.e., prepares Cu/Al on the pet substrate2O3Multi-layer compound film material.
Under the premise of overall thickness is fixed, for the film of a certain determining periodicity, by controlling Cu and Al2O3Target Sputtering time adjusts Cu and Al in the film period2O3The thickness of single thin film, thus the Cu/Al of structure needed for being formed2O3Multilayer Composite film material.
Cu/Al of the invention2O3Multi-layer compound film material is to pass through alternating sputtering deposited cu layer and Al2O3Layer, in nanometer Magnitude is combined.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
Fig. 1 is please referred to, [Cu (a) nm/Al prepared in the present embodiment2O3(b) nm] overall thickness of x multi-layer compound film is 1000nm.Material structure is specifically respectively [Cu (90nm)/Al2O3 (10nm)]10/PET、[Cu(80nm)/Al2O3(20nm)] 10/PET、[Cu(70nm)/Al2O3 (30nm)]10/PET、[Cu(60nm)/Al2O3(40nm)]10/PET。
Preparation step are as follows:
1. cleaning PET substrate, clean the surface, the back side remove dust granule, organic and inorganic impurity;
A) it is cleaned by ultrasonic by force in ethanol solution 10-20 minutes, deionized water is rinsed;
B) it is cleaned by ultrasonic by force in acetone soln 20-30 minutes, deionized water is rinsed, high-purity N2Dry up surface and the back side;
C) in 150 DEG C of drying in oven steam, about 30 minutes.
2. preparing [Cu (a)/Al using magnetically controlled sputter method2O3(b)] prepare before x multi-layer compound film:
A) Cu and Al are installed2O3Sputtering target material, the purity of target reach 99.999% (atomic percent), and by background Vacuum is evacuated to 3 × 10-4Pa;
B) sputtering power is set as 250W;
C) use high-purity Ar as sputter gas (percent by volume reaches 99.999%), set Ar throughput as 60SCCM, and sputtering pressure is adjusted to 0.5Pa.
3. preparing [Cu (a)/Al using magnetic control alternating sputtering method2O3(b)] x multi-layer compound film:
A) space base support is rotated into Cu target position, opens the radio-frequency power supply on Cu target, according to setting sputtering time (such as 200s), start to sputter Cu target material surface, clean Cu target position surface;
B) after the completion of Cu target position surface cleaning, the DC power supply applied on Cu target position is closed, space base support is rotated to Al2O3Target position opens Al2O3Radio-frequency power supply on target starts according to the sputtering time (such as 100s) of setting to Al2O3Target table Face is sputtered, and Al is cleaned2O3Target position surface;
c)Al2O3After the completion of target position surface cleaning, substrate to be sputtered is rotated into Cu target position, opens the friendship on Cu target position Galvanic electricity source starts to sputter Cu film according to the sputtering time of setting;
D) after the completion of Cu thin film sputtering, the radio-frequency power supply applied on Cu target is closed, substrate is rotated into Al2O3Target position, Open Al2O3Target position radio-frequency power supply starts to sputter Al according to the sputtering time of setting2O3Film;
E) c) and d) two step is repeated, i.e., prepares [Cu (a)/Al on PET substrate2O3(b)] x multi-layer compound film material.
Finally it is coated with [Cu (90nm)/Al2O3(10nm)]10、[Cu(80nm)/Al2O3(20nm)]10、 [Cu (70nm)/Al2O3(30nm)]10、[Cu(60nm)/Al2O3(40nm)] 10 complex multi layer films PET material, wherein [Cu (a)/Al2O3(b)] overall thickness of x multi-layer compound film is about 1000nm, and film thickness is controlled by sputtering time, and Cu's splashes Firing rate rate is 12s/nm, Al2O3Sputter rate be 40s/nm.
Experimental method and result
[Cu (a) nm/Al is coated with by 4 kinds prepared in the above embodiments2O3(b) nm] x multi-layer compound film PET material and Pure PET material for comparison is tested, obtain the mist degree of each thin-film material, visible light transmittance rate, absorption of UV, every Heating rate is as shown in table 1.
The present invention judges to embodiment and comparative example using following methods
1. the transparency of film is tested, indicate that the condition of measurement is according to GB/ with light transmittance using mist degree (Haze) T2410-2008 is executed.
2. ultraviolet isolating rate: it is tested using Japanese Shimadzu UV-3600 type spectrophotometer, reference standard GB/T/ T2680 is detected.
As shown in Table 1, all embodiment films are above the light transmittance of pure PET to the light transmittance of visible light, so as to protect Demonstrate,proving vehicle glass has preferable photopic vision;The haze index of all embodiments is respectively less than the haze index of pure PET, thus It can guarantee to have and preferably prevented fog effect;Again, suction of institute's invention film to the absorptivity of ultraviolet light obviously higher than pure PET Yield shows that automobile adhesive film of the invention has preferable sun-proof ability;By the test to heat-insulated rate, vapour of the invention is found The heat insulation of traffic allowance film is significantly better than pure PET film.To sum up, automobile adhesive film of the invention has preferable heat-insulated, UV resistance Line and other effects.
Table 1
The upper only presently filed embodiment, is not intended to limit this application.For those skilled in the art For, various changes and changes are possible in this application.All any modifications made in spirit herein and principle are equal Replacement, improvement etc., should all be included within the scope of the claims of the present application.

Claims (10)

1. a kind of uvioresistant plates Cu/Al2O3The automobile adhesive film of nano-multilayer film, which is characterized in that including silica membrane Material and pure aluminum thin-film material, the two form class superlattice structure by alternately superposition.
2. a kind of uvioresistant according to claim 1 plates Cu/Al2O3The automobile adhesive film of nano-multilayer film, feature exist In the Cu/Al2O3The general structure of multi-layer compound film material is [Cu (a) nm/Al2O3(b) nm] x, a, b distinguish table in formula Show the single layer Cu film and single layer Al2O3The thickness of film, 50≤a≤90nm, 10≤b≤50nm, x indicate single layer Al2O3 With the alternate cycle number of the single layer Sb film or alternately number of plies, and x is any positive integer.
3. a kind of uvioresistant according to claim 1 or 2 plates Cu/Al2O3The preparation of the automobile adhesive film of nano-multilayer film Method, which is characterized in that by magnetron sputtering method by Al2O3Thin-film material and simple substance Cu thin-film material progress nanometer scale are compound, Form nano composite film with multi-layer structure.
4. a kind of uvioresistant according to claim 3 plates Cu/Al2O3The preparation side of the automobile adhesive film of nano-multilayer film Method, which is characterized in that the substrate that the magnetron sputtering method uses is PET material;Sputtering target material is Al2O3And Cu;Sputter gas is Argon gas.
5. a kind of uvioresistant according to claim 4 plates Cu/Al2O3The preparation side of the automobile adhesive film of nano-multilayer film Method, which is characterized in that the sputtering target material is the Al that purity reaches 99.999%2O3Reach with atomic percent purity 99.999% Cu;The sputter gas is the argon gas that percent by volume purity reaches 99.999%.
6. a kind of uvioresistant according to claim 3 plates Cu/Al2O3The preparation side of the automobile adhesive film of nano-multilayer film Method, which is characterized in that the background vacuum of the magnetron sputtering method is not more than 3 × 10-4Pa;Sputtering power is 245-255W;Argon Gas gas flow is 75-85SCCM, sputtering pressure 0.65-0.75Pa.
7. a kind of uvioresistant according to claim 6 plates Cu/Al2O3The preparation side of the automobile adhesive film of nano-multilayer film Method, which is characterized in that the sputtering power of the magnetron sputtering method is 250W;Argon gas flow is 80sccm;Sputtering pressure is 0.70Pa。
8. a kind of uvioresistant according to claim 3 plates Cu/Al2O3The preparation side of the automobile adhesive film of nano-multilayer film Method, which is characterized in that
The magnetron sputtering method specifically comprises the following steps:
1) PET substrate is cleaned;
2) sputtering target material is installed;Set sputtering power, Sputtering Ar flow and sputtering pressure;
3) Cu/Al is prepared using radio-frequency sputtering program2O3Multi-layer compound film material.
9. a kind of uvioresistant according to claim 8 plates Cu/Al2O3The preparation side of the automobile adhesive film of nano-multilayer film Method, which is characterized in that
Radio-frequency sputtering program described in step 3) includes the following steps:
A) space base support is rotated into Al2O3Target position opens Al2O3Radio-frequency power supply on target starts pair according to the sputtering time of setting Al2O3 target material surface is sputtered, and Al is cleaned2O3Target position surface;
b)Al2O3After the completion of target position surface cleaning, Al is closed2O3Space base support is rotated to Cu target position by the radio-frequency power supply on target, is opened Radio-frequency power supply on Cu target starts to sputter Cu target material surface according to the sputtering time of setting, cleans Cu target material surface;
C) after the completion of Cu target position surface cleaning, PET substrate to be sputtered is rotated into Cu target position, opens the radio frequency electrical on Cu target Source starts to sputter Cu film according to the sputtering time of setting;
D) after the completion of Cu thin film sputtering, the radio-frequency power supply on Cu target is closed, the substrate for having sputtered Cu film is rotated to Al2O3Target position opens Al2O3Radio-frequency power supply on target starts to sputter Al according to the sputtering time of setting2O3Film;
E) step c) and d) middle sputtering Cu film and Al are repeated2O3The operation of film, i.e., prepare Cu/Al on PET substrate2O3It is more Layer composite film material.
10. Cu/Al according to claim 1 or 22O3Multi-layer compound film material is preparing answering in insulating car pad pasting With.
CN201810784097.8A 2018-07-17 2018-07-17 A kind of uvioresistant plating Cu/Al2O3The automobile adhesive film and preparation method of nano-multilayer film Pending CN108998762A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114134458A (en) * 2021-12-08 2022-03-04 上海交通大学 Periodic multilayer ultrathin heat insulation film with nano porous structure and preparation and application thereof

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Publication number Priority date Publication date Assignee Title
CN102673042A (en) * 2012-04-26 2012-09-19 蒙特集团(香港)有限公司 Novel broad-breadth sun-shading material and preparation method thereof
CN106185799A (en) * 2016-09-26 2016-12-07 江苏理工学院 A kind of SiO2/ Sb class superlattices nano phase change thin-film material and its preparation method and application
CN106381465A (en) * 2016-09-08 2017-02-08 江苏双星彩塑新材料股份有限公司 Four-silver low-radiation energy-saving window film and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102673042A (en) * 2012-04-26 2012-09-19 蒙特集团(香港)有限公司 Novel broad-breadth sun-shading material and preparation method thereof
CN106381465A (en) * 2016-09-08 2017-02-08 江苏双星彩塑新材料股份有限公司 Four-silver low-radiation energy-saving window film and preparation method thereof
CN106185799A (en) * 2016-09-26 2016-12-07 江苏理工学院 A kind of SiO2/ Sb class superlattices nano phase change thin-film material and its preparation method and application

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114134458A (en) * 2021-12-08 2022-03-04 上海交通大学 Periodic multilayer ultrathin heat insulation film with nano porous structure and preparation and application thereof

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Application publication date: 20181214