CN108998003B - A kind of liquid metal quantum material and preparation method thereof - Google Patents
A kind of liquid metal quantum material and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of liquid metal quantum material and preparation method thereof, the liquid metal quantum material including internal liquid metal nano-liquid droplet, and is coated on the liquid metal compounds layer outside the liquid metal nano-liquid droplet；Wherein, the liquid metal compounds layer is that the solid reactant that displacement is reacted: CuCl2, AgCl, NiCl2 occurs with following solution for the oxide of the liquid metal or the liquid metal.The invention also discloses the methods for preparing the liquid metal quantum material.Liquid metal quantum material of the present invention has liquid, flexibility, the deformability of mystique；Material manufacture difficulty greatly reduces, so that the electronics interconnection difficulty of traditional quantum material or device substantially reduces, is more conducive to the application of quantum techniques.
Description
The present invention be August in 2017 1 application No. is the 2017106480557, applying date, a kind of entitled " liquid
The divisional application of the patent of state metal quantum material and preparation method thereof ".
Technical field
The invention belongs to quantum Material Fields, more particularly to a kind of liquid metal quantum material and preparation method thereof.
Background technique
Quantum material is that a major class is both different from microcosmic atom, molecule in physics, chemistry or even biological property, is also shown
Write the new material for being different from macro object.Due to, in unique quantum confined effect (also referred to as quantum size effect), being measured in it
The substance behavior of sub- material often shows the new features of many novelties, new effect between both macro and micro object
It answers.For example, when semiconductor crystal is small to nanoscale a ten thousandth of hairline width (1 nanometer be approximately equal to), different sizes
Same substance can issue the light of different colours, respective effects can be used for the high-resolution fluorescence detection of tiny organism object；
More effects can also be used in illumination, display, quantum laser device, quantum type solar battery, quantum calculation, quantum communication, amount
Son is stealthy etc..In recent years, with a series of important breakthroughs obtained in quantum application technology, the research and development of quantum material and device
Becoming a completely new field with application, industry it is believed that quantum material in related field to be expected leading future tens of
The technological innovation path in year.
Currently, a series of unique quantum materials have been developed in researcher, and related material category is also gradually enriched
Get up.Wherein such as than more typical person, the quasi-zero dimension nano material quantum dot being made of atom and molecular aggregate, can by CdS,
CdSe, CdTe, ZnSe, InP, InAs etc. are made.In addition, the also built-in electrical insulation for causing industry greatly to be paid attention to, appearance conduction
Topological insulator can pass through Bi2Se3, Sb2Te3, Bi2Te3Equal compounds are made.It is not difficult to find out that all these quantum materials have
It is solid that one common feature, which is exactly all of which, cannot deform, divide, manufacture there are certain difficulty, application is upper also can be by
To certain restrictions.
Currently, although the mankind can produce size in the nano-transistor of 1 ran, a large amount of such transistors
There are great difficulties on realization is electrically interconnected.Also because in this way, industry have as view, i.e., " reduce transistor itself not
It is solution to the problem.Allow to produce the transistor of 100,000,000,000,000 molecular volumes of number, trial connects together them, ties
Fruit may is that mess." obviously, if quantum material can be produced using liquid metal, it is different from traditional liquid metal,
Different from existing quantum material, is supported great core material is provided for emerging quantum engineering, be achieved in wider model
The quantum techniques application enclosed, or even push the great-leap-forward development of quantum technical industry.Generally speaking, with various quantum behaviors
Liquid metal quantum material, it is expected to which the existing technology scope of take on a new look existing liquid metal and quantum material is received simultaneously for promotion
Rice electronics it is quick manufacture and integrate can bring important breakthrough.
Summary of the invention
Technology based on the above background, to overcome the limitation of existing quantum material and changing traditional quantum material with solid-state
Plastochondria can not now deform and nano electron device is not easy to realize the status being electrically interconnected；The purpose of the present invention is to provide
A kind of liquid metal quantum material, by being subject to the liquid that specially treated obtains expected Quantum Properties to liquid metal nano particle
Metal quantum material can be used for making for example deformable quantum storage of quantum device, quantum crystal pipe or more.
The liquid metal quantum material including internal quantum dot particle or quantum device, and is coated on the amount
Liquid-metal layer outside son point particle or quantum device；
Or, the liquid metal quantum material includes internal liquid metal nano-liquid droplet, and it is coated on the liquid
Liquid metal compounds layer outside metal nano drop.
The liquid metal quantum material includes internal quantum dot particle or quantum device, and is coated on the quantum
Liquid-metal layer outside point particle or quantum device；It further include liquid metal compounds layer；
The liquid metal compounds layer is the oxide layer or the liquid metal compounds conversion zone of the liquid metal；
The oxide layer is that oxidation generation occurs in air or oxygen for liquid metal；
The compound reaction reacts generation with compound by liquid metal；
The compound is one of chloride, and the present invention preferentially selects CuCl2、AgCl、NiCl2Middle one kind.It is used
Chloride concentration be 0.01-2mol/L, preferably 0.1-1mol/L.
The present invention proposes that the thickness ratio of ground, the liquid-metal layer and the quantum dot particle or quantum device is 1- into one
100:1；Preferably 30-70:1.
The thickness ratio of the liquid metal compounds layer and the liquid-metal layer is 1-100: 1-100；Or, the liquid
The thickness ratio of metal compound layer and the liquid metal nano-liquid droplet is 1-100: 1-100；Preferably 30-70: 30-70.
Length on the three-dimensional of the liquid metal quantum material is 1nm-200nm.
Wherein, three-dimensional length is specially ruler of the liquid metal quantum material on three directions of solid space x, y, z
Very little, which is required in quantum confined effect range；The three-dimensional length of the liquid metal quantum material depends on selecting
Liquid metal type, by material category needs made.
Present invention further propose that, the liquid metal be selected from gallium, indium, tin, bismuth, zinc, gallium-base alloy, indium-base alloy,
One of kamash alloy, bismuth-base alloy, zinc-containing alloy or lead-containing alloy are a variety of；
Preferably, the liquid metal be selected from gallium indium, gallium tin, bismuth tin, indium bismuth, indium tin, gallium indium tin, bismuth indium tin, bismuth indium zinc,
One of indium tin zinc, bismuth tin copper, bismuth indium cadmium, gallium indium tin zinc, indium tin zinc bismuth, bismuth indium tin silver or zinc bismuth silver copper alloy are a variety of.
Used liquid metal is low-melting-point metal or low-melting point metal alloy；The low melting point is specifically that fusing point is lower than
232℃。
Such material can be worked in the form of liquid states of matter at a certain temperature, itself has natural electric conductivity or semiconductor
Attribute.
For the liquid metal when using gallium-base alloy, bismuth-base alloy or indium-base alloy, effect is preferable.Above-mentioned liquid metal
Can exist in liquid form at normal temperature, thus it is very convenient for preparing for target quantum material；Certainly, according to higher
Melting point metals, also achievable respective objects, but temperature maintenance needs additional measures.Therefore, more using above-mentioned liquid metal alloy
Less preparation section saves preparation cost.
Gallium content is 10wt%-100wt% in the gallium-base alloy；Bi content is 10w t%- in the bismuth-base alloy
95wt%；Indium content is 10wt%-95wt% in the indium-base alloy；
Preferably, gallium content is 50wt%-90wt% in the gallium-base alloy；Bi content is in the bismuth-base alloy
50wt%-90wt%, indium content is 50wt%-90wt% in the indium-base alloy.
Present invention further propose that, the quantum dot particle be selected from CdS, CdSe, CdTe, ZnSe, InP, InAs,
Bi2Se3、Sb2Te3、Bi2Te3One of or it is a variety of；
The diameter of the quantum dot particle is 1nm-80nm；Preferably 10nm-50nm.
The quantum device is selected from single electron carbon nanotubes transistor, molybdenum disulfide compound, silicon transistor, graphene etc.
One of or it is a variety of.
Another object of the present invention is to provide the preparation method of above-mentioned liquid metal quantum material, the method includes such as
Lower step:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order
Liquid metal is further broken up using ultrasound for the first time to nanoscale liquid metal；
2) quantum dot particle or quantum device, stirring, and/or second of ultrasound are added in nanoscale liquid metal, i.e.,
Obtain metal nano drop；
The method also includes step 3), specifically: metal nano drop is placed in air or oxygen aoxidize to get；
Or will metal nano drop obtained be added compound solution in, stirring to get.
The time of second of ultrasound is 0.5-5h, and frequency is 0.5~10MHz, power 0.5-50W.
The present invention also provides the preparations of the above-mentioned liquid metal quantum material without containing quantum dot particle or quantum device
Method, comprising the following steps:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order
Liquid metal is further broken up using ultrasound for the first time to nanoscale liquid metal；
2) by nanoscale liquid metal droplet be placed in air or oxygen aoxidize to get；Or by nanoscale liquid metal liquid
Be added dropwise in compound solution, stirring to get.
The mass ratio of the liquid metal and the quantum dot particle or quantum device is 10-100: 1.
The solution containing surfactant is one of HCl, water, NaCl or NaOH solution, the surface active
The concentration of agent solution is 0.01-2mol/L, preferably 0.5-1.5mol/L.The solution can be chemically reacted with liquid metal
Or displacement reaction；It may be implemented to obtain more quantum materials.
In order to avoid the fusion of molten drop, and auxiliary preparation process.It is living to be added to surface in preparation process by the present invention
Agent.The surfactant can for anionic surfactant, cationic surfactant, zwitterionic surfactant or
Zwitterionic surfactant；
Wherein the anionic surfactant is in stearic acid, lauryl sodium sulfate or neopelex
It is one or more；
The cationic surfactant is quaternary ammonium compound；
The zwitterionic surfactant is one or more in lecithin, amino acid pattern or betaine type；
The nonionic surfactant is selected from fatty glyceride, fatty acid sorbitan (sapn) or polysorbate and (spits
Temperature) one of or it is a variety of；
Present invention further propose that metal nano drop obtained can be placed in multiple compounds solution, stirs, can obtain
The liquid metal quantum material of multiple functions characteristic must be integrated.
When metal nano drop, which is placed in air or oxygen, to be aoxidized, formed outer layer be oxide layer semiconductor,
Inside is the liquid metal quantum material of electric conductor and quantum device；
When metal nano drop is added in compound solution, forming outer layer by displacement chemical reaction becomes solid, interior
Portion is the liquid metal quantum material of liquid electric conductor.
The stirring is a kind of in mechanical stirring, electromagnetic agitation, ultrasonic agitation or vibration stirring；Preferably electromagnetic agitation；
Wherein electric field can further trigger quantum dot particle or quantum equipment is swallowed in liquid metal particle.
The time of the stirring is 0.5-5h；When using ultrasonic agitation, the frequency of the ultrasound is 0.5~10MHz, institute
The power for stating ultrasound is 0.5-50W.
The preparation of the liquid metal specifically: in proportion by metal mixed, under conditions of temperature is 30-600 DEG C, first
It places 30-120 minutes, then stirs 4-6 hours by the rate of 300-700rpm to get liquid metal.
Liquid metal quantum material prepared by the present invention can according to actual needs, can will according to the above method obtained two
Kind or a variety of liquid metal quantum materials are mixed once again, and specific liquid metal quantum material is made.
Preferably, the present invention provides a kind of method for preparing liquid metal quantum material, the method includes with
Lower step:
1) by the liquid metal of preparation be added the liquid water containing the lauryl sodium sulfate that concentration is 0.01-2mol/L,
In NaCl or NaOH solution, liquid metal is dispersed by micro-sized metal drop using mechanical injection method, reusing ultrasound will
It is the nanometer liquid metal in 40-60nm that micro-meter scale molten drop, which is dispersed as diameter,；
2) in nanometer liquid metal solution, quantum dot particle or quantum equipment is added, it is uniform using electromagnetic agitation, then lead to
Overfrequency be 0.5~10MHz, power be 0.5-50W ultrasound condition, ultrasonic 0.5-5h, smash and assist being dispersed as diameter be
The nano-liquid droplet of 25-35nm is to get coated quantum dots particle or the metal nano drop of quantum device.
3) the metal nano drop is placed in oxygen or air, was aoxidized by 1-30 minutes, that is, forming outer layer is oxygen
Change the liquid metal quantum material of layer；Or the metal nano drop is added to the CuCl that the concentration is 0.01-2mol/L2
In solution, stir evenly, it can liquid metal quantum material.
Another preferred embodiment of the invention provides a kind of method for preparing liquid metal quantum material, the method includes with
Lower step:
1) by the liquid metal of preparation be added the liquid water containing the lauryl sodium sulfate that concentration is 0.01-2mol/L,
In NaCl or NaOH solution, liquid metal is dispersed by micro-sized metal drop using mechanical injection method, reusing ultrasound will
It is the nanometer liquid metal droplet in 40-60nm that micro-meter scale molten drop, which is dispersed as diameter,；
2) the nanometer liquid metal droplet is placed in oxygen or air, was aoxidized by 1-30 minutes, that is, forms outer layer
For the liquid metal quantum material of oxide layer；Or it is 0.01-2mol/L's that the metal nano drop, which is added to the concentration,
CuCl2In solution, stir evenly, it can liquid metal quantum material.
The present invention at least has the advantages that
1, taken on a new look the existing concept and technology scope of existing liquid metal and quantum material, provided liquid metal for the first time
The material of this brand new conception of quantum material has both the abundant characteristic of liquid metal deformation and quantum material；
2. the scope that liquid metal quantum material extends traditional quantum material.It itself is not necessarily nano crystal material
Material can be the aggregate of a variety of properties.For example, liquid metal quantum material can be by superficial semiconductor, middle layer solid metallic
Crystal and the internal metallic conductor composition being in a liquid state, thus more complicated physical chemistry behavior is reflected, thus it can develop
More quantum devices out.
3. liquid metal quantum material can be produced perhaps other than the liquid, flexibility, deformability that have great mystique
It is different from the attribute of traditional quantum material, for example, the inside of famous topological insulator is insulation, and boundary or surface are in more
Electrical conductive behavior, and liquid metal quantum material appearance easily aoxidizes and becomes semiconductor, and this oxidation film prevents internal gold immediately
Thus the oxidation of category becomes inner conductive, exterior section insulation or the state in semiconductor, the physical attribute that can be presented and is expected to more
It is abundant.Moreover, its production method is faster compared with traditional quantum material, size can be made smaller, since itself is in liquid, because
This such nanometer liquid metal can be cut or be dispersed by the probe of energy beam or mechanical system such as atomic force microscope,
Give the size that specific oxidation course realizes inner conductive core again later, this nano metal drop is analogous to famous atom a bit
Liquid drop model of nucleus, only the latter is a kind of theory setting, and liquid metal quantum material is then real material.
4, compared with traditional quantum material, liquid metal quantum material manufacture difficulty is greatly reduced, the amount of being more conducive to
The application of sub- technology；
5, due to the introducing of liquid metal, so that the electronics interconnection difficulty of traditional quantum material or device substantially reduces,
To be created condition to manufacture practical device；
6, thus the proposition of liquid metal quantum material is the ideational innovation to traditional metal materials and quantum material, can be
Amplify out a large amount of whole new set of applications.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of liquid metal quantum material of the present invention.
In figure: 1, liquid metal；2, quantum material or device；3, liquid metal compounds layer.
Specific embodiment
The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention..
Embodiment 1
A kind of liquid metal quantum material, including liquid-metal layer and quantum dot particle；The liquid metal is gallium indium conjunction
Golden Ga24.5In, the quantum dot particle are CdS quantum dot,
Wherein the liquid metal and the mass ratio of CdS quantum dot are 10: 1.
Thus obtained liquid metal quantum material is provided simultaneously with the double grading of liquid metal and CdS quantum dot, i.e., electric
Son interconnection and Quantum Properties.
Embodiment 2
The present embodiment is that liquid metal quantum material described in embodiment 1 is prepared using following steps:
1) the liquid metal gallium-indium alloy Ga is taken according to the ratio24.5In；
2) liquid metal is placed in constant temperature in air environment to handle, treatment temperature is 50 DEG C, and the processing time is 1h；So
After be stirred, stirring rate 500rpm, mixing time 5h；Obtain the liquid metal of liquid condition；
3) liquid metal is handled as liquid condition, is placed in concentration in the lauryl sodium sulfate of 1.5mol/L range
Solution in, liquid metal self-dispersing is passed through into high intensity at micro-meter scale molten drop again later using mechanical injection method
Ultrasound, which is smashed and assisted, is dispersed as diameter dimension in the nano metal drop of 50nm or so for micro-meter scale molten drop with outfield；
4) the liquid metal particle above-mentioned in the solution is added the CdS quantum dot having a size of 10 nanometers, passes through
Electric field triggering swallows quantum dot in liquid metal particle, stirs evenly, and is 5MHz, power with frequency later again by ultrasound
For the condition of 25W, ultrasonic 4h is smashed and is assisted and is dispersed as diameter in the nano-liquid droplet of 30nm or so with outfield, will be measured at this time
Son point is wrapped in molten drop to get liquid metal quantum material.
Thus obtained liquid metal quantum material is provided simultaneously with the more of liquid metal and its oxide and CdS quantum dot
Weight characteristic realizes more complicated electronics interconnection and Quantum Properties.
Embodiment 3-10
Liquid metal quantum material, raw material include liquid metal and quantum dot particle, and the difference with embodiment 1 is only that
Quantum dot particle is different.The production method of the liquid metal quantum material is the same as embodiment 2.
| Number | Liquid metal | Quantum dot particle |
| Embodiment 3 | Gallium-indium alloy Ga24.5In | CdSe |
| Embodiment 4 | Gallium-indium alloy Ga24.5In | CdTe |
| Embodiment 5 | Gallium-indium alloy Ga24.5In | ZnSe |
| Embodiment 6 | Gallium-indium alloy Ga24.5In | InP |
| Embodiment 7 | Gallium-indium alloy Ga24.5In | InAs |
| Embodiment 8 | Gallium-indium alloy Ga24.5In | Bi2Se3 |
| Embodiment 9 | Gallium-indium alloy Ga24.5In | Sb2Te3 |
| Embodiment 10 | Gallium-indium alloy Ga24.5In | Bi2Te3 |
Embodiment 11-14
Liquid metal quantum material, raw material include liquid metal and quantum equipment, the difference amount of being only that with embodiment 1
Sub- equipment is different.The production method of the liquid metal quantum material is the same as embodiment 2.
Embodiment 15
Liquid metal quantum material, raw material include liquid metal and compound, and the difference with embodiment 2 is only that processing
Mode is different.The liquid metal quantum material the production method is as follows:
1) the liquid metal gallium-indium alloy Ga24.5In is taken according to the ratio；
2) liquid metal is placed in constant temperature in air environment to handle, treatment temperature is 50 DEG C, and the processing time is 1h；So
After be stirred, stirring rate 500rpm, mixing time 5h；Obtain the liquid metal of liquid condition；
3) liquid metal is handled as liquid condition, the lauryl sodium sulfate for being placed in concentration in 1mol/L range is molten
In liquid, liquid metal self-dispersing is passed through into high strength supersonic at micro-meter scale molten drop again later using mechanical injection method
It smashes and assists and micro-meter scale molten drop is dispersed as in the nano metal drop of 50nm or so by diameter dimension with outfield；
4) the nano metal drop is placed in air environment constant temperature to handle, treatment temperature is 50 DEG C, and the processing time is
1h；Obtain the liquid metal quantum material that outer layer is insulating oxide 3；
5) the multilayer liquid metal quantum material is further smashed by electronics or ultrasound, is equally being aoxidized
Processing, can be obtained smaller liquid metal quantum material.
The liquid metal quantum material can be liquid metal itself and directly make after oxidation or chemical reaction handling
At quantum dot, quantum layer structure, also have corresponding Quantum Properties.
Embodiment 15
The present embodiment is that liquid metal quantum material described in embodiment 1 is prepared using following steps:
1) the liquid metal gallium-indium alloy Ga is taken according to the ratio24.5In；
2) liquid metal is placed in constant temperature in air environment to handle, treatment temperature is 50 DEG C, and the processing time is 1h；So
After be stirred, stirring rate 500rpm, mixing time 5h；Obtain the liquid metal of liquid condition；
3) liquid metal is handled as liquid condition, is placed in concentration in the lauryl sodium sulfate of 1.5mol/L range
Solution in, liquid metal self-dispersing is passed through into high intensity at micro-meter scale molten drop again later using mechanical injection method
Ultrasound, which is smashed and assisted, is dispersed as diameter dimension in the nano metal drop of 50nm or so for micro-meter scale molten drop with outfield；
4) the liquid metal particle above-mentioned in the solution is added the CdS quantum dot having a size of 10 nanometers, passes through
Electric field triggering swallows quantum dot in liquid metal particle, stirs evenly, and is 5MHz, power with frequency later again by ultrasound
For the condition of 25W, ultrasonic 4h is smashed and is assisted and is dispersed as diameter in the nano-liquid droplet of 30nm or so with outfield, will be measured at this time
Son point is wrapped in molten drop, obtains a nanometer liquid metal droplet.
5) the nanometer liquid metal droplet is placed in oxygen or air, was aoxidized by 1-30 minutes, that is, forms outer layer
For the liquid metal quantum material of oxide layer；Or it is 0.01-2mol/L's that the metal nano drop, which is added to the concentration,
CuCl2It in solution, stirs evenly, that is, forms the liquid metal quantum material that outer layer is compound layer.
Liquid metal quantum material described in the present embodiment is as shown in Figure 1.
Embodiment 16
Liquid metal quantum material, raw material include liquid metal and compound, and the difference with embodiment 14 is only that place
Reason mode is different, and using such as acid liquid solution, alkaline solution and nanometer liquid metal to react, to form unlike material exhausted
Edge layer quantum material.
Embodiment 17
Liquid metal quantum material is only that liquid metal is different from the difference of embodiment 2-16, the liquid metal quantum
The liquid metal of material is bismuth-base alloy Bi In21Sn12Pb18。
The production method of the present embodiment liquid metal quantum material is only that with the difference of embodiment 1, by bismuth-base alloy Bi
In21Sn12Pb18Constant temperature 4 hours in 250 DEG C of vacuum constant-temperature container are placed in, are then used magnetic stirrer 50 minutes, liquid is made
The bismuth-base alloy Bi In of state state21Sn12Pb18。
Wherein, bismuth-base alloy Bi In21Sn12Pb18Production method include: ratio according to mass ratio 49:21:12:18
Pure bismuth, pure indium, pure tin and pure lead are weighed respectively, is put into rustless steel container, container are placed in 250 DEG C of vacuum constant-temperature container permanent
Temperature 4 hours is then used magnetic stirrer 50 minutes, obtains bismuth-base alloy Bi In21Sn12Pb18, fusing point is 58 DEG C.
Embodiment 18
Liquid metal quantum material, the difference with embodiment 1-17 are only that the type of liquid metal and quantum material can be by
Multiple combinations form.
Although above having used general explanation, specific embodiment and test, the present invention is made to retouch in detail
It states, but on the basis of the present invention, it can be made some modifications or improvements, this is apparent to those skilled in the art
's.Therefore, these modifications or improvements without departing from theon the basis of the spirit of the present invention, belong to claimed
Range.
Claims (11)
1. a kind of liquid metal quantum material, which is characterized in that including internal liquid metal nano-liquid droplet, and be coated on institute
State the liquid metal compounds layer outside liquid metal nano-liquid droplet；Wherein, the liquid metal compounds layer is the liquid
The solid reactant that displacement is reacted: CuCl occurs with following solution for the oxide of metal or the liquid metal2、AgCl、
NiCl2。
2. liquid metal quantum material according to claim 1, which is characterized in that the liquid metal compounds layer and institute
The thickness ratio for stating liquid metal nano-liquid droplet is 1-100: 1-100.
3. liquid metal quantum material according to claim 1, which is characterized in that the three of the liquid metal quantum material
Tieing up the length on direction is 1nm-200nm.
4. liquid metal quantum material according to claim 1, which is characterized in that the liquid metal be selected from gallium, indium,
One of tin, bismuth, zinc, gallium-base alloy, indium-base alloy, kamash alloy, bismuth-base alloy, zinc-containing alloy or lead-containing alloy.
5. liquid metal quantum material according to claim 1, which is characterized in that gallium content is in the gallium-base alloy
10wt%-100wt%；Bi content is 10wt%-95wt% in the bismuth-base alloy；Indium content is in the indium-base alloy
10wt%-95wt%.
6. liquid metal quantum material according to claim 5, which is characterized in that gallium content is in the gallium-base alloy
50wt%-90wt%；Bi content is 50wt%-90wt% in the bismuth-base alloy, and indium content is in the indium-base alloy
50wt%-90wt%.
7. liquid metal quantum material according to claim 1, which is characterized in that the liquid metal is selected from gallium indium, gallium
Tin, bismuth tin, indium bismuth, indium tin, gallium indium tin, bismuth indium tin, bismuth indium zinc, indium tin zinc, bismuth tin copper, bismuth indium cadmium, gallium indium tin zinc, indium tin zinc
One of bismuth, bismuth indium tin silver or zinc bismuth silver copper alloy are a variety of.
8. a kind of method for preparing any liquid metal quantum material of claim 1-7, which is characterized in that including following step
It is rapid:
1) liquid metal is taken, is added in the solution containing surfactant, is first passed through mechanical injection method and break up to micron order liquid
State metal, then further broken up the micron order liquid metal to nanoscale liquid metal using ultrasonic treatment for the first time；
2) the nanoscale liquid metal droplet is placed in air or oxygen and is aoxidized to get with the oxide of liquid metal cladding
Liquid metal quantum material；Or, CuCl is added in nanoscale liquid metal droplet2、AgCl、NiCl2In solution, stirring to get
With liquid metal and CuCl2、AgCl、NiCl2The liquid metal quantum for the solid reactant cladding that displacement reaction obtains occurs for solution
Material.
9. according to the method described in claim 8, it is characterized in that, the solution containing surfactant be HCl, water,
One of NaCl or NaOH solution.
10. according to the method described in claim 8, it is characterized in that, the surfactant is selected from stearic acid, dodecyl sulphur
Sour sodium, neopelex, quaternary ammonium compound, lecithin, amino acid pattern, betaine type, fatty glyceride, fatty acid mountain
Pears are smooth or one of polysorbate or a variety of.
11. according to the method described in claim 8, it is characterized in that, the surfactant concentration is 0.01-2mol/L.
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