CN108990261A - The preparation method of nano metal substrate and preparation method and the wiring board containing the substrate - Google Patents
The preparation method of nano metal substrate and preparation method and the wiring board containing the substrate Download PDFInfo
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- CN108990261A CN108990261A CN201710413493.5A CN201710413493A CN108990261A CN 108990261 A CN108990261 A CN 108990261A CN 201710413493 A CN201710413493 A CN 201710413493A CN 108990261 A CN108990261 A CN 108990261A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 129
- 239000002184 metal Substances 0.000 title claims abstract description 129
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229920001721 polyimide Polymers 0.000 claims abstract description 95
- 239000004642 Polyimide Substances 0.000 claims abstract description 94
- 238000007788 roughening Methods 0.000 claims abstract description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims description 25
- 239000000843 powder Substances 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 238000005553 drilling Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000003063 flame retardant Substances 0.000 claims description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000009472 formulation Methods 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 239000011268 mixed slurry Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 claims description 2
- 241000209094 Oryza Species 0.000 claims 3
- 235000007164 Oryza sativa Nutrition 0.000 claims 3
- 235000009566 rice Nutrition 0.000 claims 3
- 150000002739 metals Chemical class 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 230000002159 abnormal effect Effects 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 4
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 238000004904 shortening Methods 0.000 abstract 1
- 239000004952 Polyamide Substances 0.000 description 8
- 229920002647 polyamide Polymers 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000960 colored gold Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/306—Resistant to heat
- B32B2307/3065—Flame resistant or retardant, fire resistant or retardant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/536—Hardness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
- B32B2307/734—Dimensional stability
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a kind of nano metal substrate and the preparation method of preparation method and the wiring board containing the substrate, substrate includes low thermal expansion coefficient polyimide layer, roughening polyimide layer and ultrathin nanometer metal layer；Ultrathin nanometer metal layer includes silver metal layer, copper metal layer and nickel metal layer；Ultrathin nanometer metal layer with a thickness of 90-800nm, wherein silver metal layer with a thickness of 5-15nm, copper metal layer with a thickness of 90-150nm, nickel metal layer with a thickness of 5-15nm.The present invention is designed using Nanometer Copper, is met the needs of substrate graph thinning development, is met the production requirement of FPC manufacturer, reduce the product yield of FPC manufacturer, reduces processing cost；And the physical preparation method of nano metal substrate can improve chemical method and sting the exceptions such as the broken, pit in hole caused by erosion is exaggerated to the hole wall of metal substrate, especially carbon residual easily occurs for the copper facing of black holes mode, cause reliability and size, peel strength etc. abnormal, the advantages of also having and reduce FPC bore process, shortening fabrication cycle.
Description
Technical field
The invention belongs to electric substrate technical fields, more particularly to a kind of nano metal substrate and preparation method and containing this
The preparation method of the wiring board of substrate.
Background technique
IT industry development makes rapid progress, and quickly light and shortization, printed circuit board are also faced with high-precision, height to electronic product
The challenge of density, graph thinning.Especially recently as 4G, 5G, 6G ... and the fast development of the display screen such as 2K, 4K, drive
Dynamic flexible circuit board must be smaller and smaller and part passive block can be integrated on wiring board, then not only contributes to system
Miniaturization, improves the packing density of circuit, also advantageously improves the reliability of system.In consideration of it, urgently developing a kind of for thin
The material of type high-density line.
At present on the market in order to which the demand for cooperating graph thinning route to process largely uses two methods: first is that losing thin copper
Method；Second is that semi-additive process.
Losing Bao Tongfa is that originally thicker copper foil is stung a part of copper foil of eating away using liquid medicine by etch process to reach
The requirement of slimming, but in actual production operation we have found that the method to etch uniformity require it is very high, do not infuse slightly
Phenomena such as implying that, which will cause, etches not exclusively, and the residual copper of route causes short circuit.
Semi-additive process is the most solutions of current Nanometer Copper substrate manufacturer, is divided into: one is copper-plating method, and two be carrier
Copper method.
Copper-plating method is that polyimide film is carried out prebored hole using step, is handled with plasma-based and adds ultrasonic chemical cleaning PI
(polyimides) surface and hole wall surface achieve the purpose that coarse surface, then make PI using galvanoplastic by the mode of catalyst
Surface and hole wall plate one layer of catalyst layer: then such as chromium, palladium, nickel, carbon or its alloy-layer are increased by the copper-plated mode of chemical-electrical
Add the thickness of copper base.But such technique is easy to happen through-hole, and to sting broken, pit in hole caused by erosion is exaggerated etc. in chemistry roughening different
Often, especially carbon residual easily occurs for the copper facing of black holes mode, causes reliability and size, peel strength etc. abnormal.In order to meet knot
The demand of resultant force needs to improve between conventional metal layer and polyimide layer by heat treatment after completing first layer catalyst layer
Adhesion problem, but this brings very big puzzlement to the dimensional stability of substrate.
And carrier copper method easily causes processing when removing carrier layer although carrier layer protects copper foil not injured, pressure wound
Stress-retained when difficult and removing and be easy to cause the deformation of copper foil, size harmomegathus to become larger；Another extra thin copper foil processing is not easy,
It will increase processing cost.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of nano metal substrate and preparation method and containing the substrate
The preparation method of wiring board, is designed using Nanometer Copper, is met the needs of substrate graph thinning development, is met the life of FPC manufacturer
Production demand reduces the product yield of FPC manufacturer, reduces processing cost；And the physical preparation method of nano metal substrate can
It is easy that improvement chemical method stings exception, especially the black holes mode copper facing such as the broken, pit in hole caused by erosion is exaggerated to the hole wall of metal substrate
Carbon residual occurs, causes reliability and size, peel strength etc. abnormal, also has and reduce FPC bore process, shorten fabrication cycle
The advantages of.
In order to solve the above technical problems, one technical scheme adopted by the invention is that: a kind of nano metal substrate, institute are provided
Nano metal substrate is stated to include low thermal expansion coefficient polyimide layer, be formed in low thermal expansion coefficient polyimide layer two sides
Roughening polyimide layer and be formed in it is described roughening polyimide layer another side ultrathin nanometer metal layer, the roughening polyamides
Imine layer is between the low thermal expansion coefficient polyimide layer and the ultrathin nanometer metal layer；
The ultrathin nanometer metal layer includes silver metal layer, the copper metal layer and shape for being formed in the silver metal layer any surface
The nickel metal layer of copper metal layer another side described in Cheng Yu, the silver metal layer is between the roughening polyimide layer and copper gold
Belong between layer, the copper metal layer is between the silver metal layer and the nickel metal layer；
The low thermal expansion coefficient polyimide layer with a thickness of 12.5-100um；
It is described roughening polyimide layer with a thickness of 2-5um；
The ultrathin nanometer metal layer with a thickness of 90-800nm, it is preferred that the thickness of the ultrathin nanometer metal layer
For 100-200nm, wherein the silver metal layer with a thickness of 5-15nm, the copper metal layer with a thickness of 90-150nm, it is described
Nickel metal layer with a thickness of 5-15nm.
It further says, the thermal expansion coefficient of the low thermal expansion coefficient polyimide layer is 4-19ppm/ DEG C.
It further says, it is rough surface and surface that the roughening polyimide layer, which is the face contacted with ultrathin nanometer metal layer,
Polyimide layer of the roughness between 50-800nm.
It further says, the ultrathin nanometer metal layer is sputtered layer or electroplated layer.
It further says, the thermal expansion coefficient of the low thermal expansion coefficient polyimide layer is 4-11ppm/ DEG C.
Further say, the low thermal expansion coefficient polyimide layer with a thickness of 12.5-50um.
It further says, it is rough surface and surface that the roughening polyimide layer, which is the face contacted with ultrathin nanometer metal layer,
Polyimide layer of the roughness between 80-800nm.
It further says, the structure for constituting the rough surface of the roughening polyimide layer is: the roughening polyamides is sub-
The surface contacted in amine layer and with the ultrathin nanometer metal layer is formed with powder roughened layer, and the powder roughened layer is by inorganic
The material layer that the material layer or fire-retardant compound powder that powder is constituted are constituted.
The another technical solution that the present invention uses is: providing a kind of preparation method of nano metal substrate, the preparation side
Method is at least one of following methods:
Method one: hole wall jet-plating metallization method
S1, a low thermal expansion coefficient polyimide layer is provided, it is sub- in low thermal coefficient of expansion polyamides using UV or machine drilling
Amine layer surface forms hole required for FPC is manufactured；
S2, the roughening polyimide layer through surface roughening treatment is pressed on the two sides of low thermal expansion coefficient polyimide layer；
S3, it is roughened the surface of polyimide layer at two layers in a manner of sputter or plating and hole wall sequentially forms silver-colored gold respectively
Belong to layer, copper metal layer and nickel metal layer；
Method two: metal filling perforation method
S1, a low thermal expansion coefficient polyimide layer is provided, it is sub- in low thermal coefficient of expansion polyamides using UV or machine drilling
Amine layer surface forms hole required for FPC is manufactured；
S2, the roughening polyimide layer through surface roughening treatment is pressed on the two sides of low thermal expansion coefficient polyimide layer；
S3, the electrocondution slurry of the high solid granule content containing special formulation (be can be into copper, silver, nickel, carbon or other gold
The mixed slurry of category) it is penetrated into prefabricated hole by biting for halftone, it is acted on using capillary air draught, makes to fill cylinder in aperture
Or the electrocondution slurry of rivet type structure, interconnection hole is formed, then baking makes its solidification；
S4, in a manner of sputter or plating two layers be roughened polyimide layer surface sequentially form respectively silver metal layer,
Copper metal layer and nickel metal layer.
It is that the present invention uses another solution is that provide a kind of preparation method of wiring board containing the substrate, including with
Lower step:
S1, the wherein one side of nano metal substrate ultrathin nanometer metal layer set primary antibody plating photoresist layer；
S2, above-mentioned plating resist photoresist layer is exposed and is developed according to wiring board configuration pattern, locally expose ultrathin nanometer to the open air
Metal layer and remaining plating resist photoresist layer；
S3, the ultrathin nanometer metal layer and plating resist photoresist layer being exposed are removed using etching method；
S4, copper facing is carried out to required thickness using surface of the galvanoplastic to wiring board.
Beneficial effects of the present invention at least have the following:
One, the multi-laminate structure that the present invention is constituted using low thermal expansion coefficient polyimide layer and roughening polyimide layer, and
The thermal expansion coefficient of low thermal expansion coefficient polyimide layer is 4-11ppm/ DEG C, and the CTE that can reduce nano metal substrate is (hot swollen
Swollen coefficient) value, so that the size harmomegathus of nano metal substrate is smaller, with splendid dimensional stability, suitable for ultra fine-line
Application；
Two, the surface roughness of conventional polyimide layer is between 10-20nm, will lead to its adhesion with metal layer not
Good, the PI film of roughening polyimide layer of the invention using surface roughness between 80-800nm, the PI film is one
PI resin of the kind Jing Guo roughening treatment can increase the adhesion with metal layer, and its surface roughening treatment is by surface electricity
The powder roughened layer on dizzy, plasma-based processing or surface contains inorganic material powder or fire-retardant compound, can promote surface energy, increase
The adhesion being roughened between polyimide layer and ultrathin nanometer metal layer, inorganic material powder or fire-retardant compound can also promote it
The hardness and anti-flammability on surface；
Three, the powder for the surface addition that roughening polyimide layer is contacted with ultrathin nanometer metal layer can not only be roughened polyamides Asia
Amine layer surface, moreover it is possible to increase the surface hardness and its anti-flammability of polyimide layer；
Four, ultrathin nanometer metal layer of the invention includes silver metal layer, copper metal layer and nickel metal layer, outermost nickel gold
It is not oxidized that category layer can protect intermediate copper metal layer；
Five, the present invention prepares nano metal substrate using hole wall jet-plating metallization method or metal filling perforation method, can overcome chemistry
Method stings exception, especially the black holes mode copper facing such as the broken, pit in hole caused by erosion is exaggerated to the hole wall of metal substrate and it is residual that carbon easily occurs
It stays, causes reliability and size, peel strength etc. abnormal；
Six, the present invention prepares the metal filling perforation method of nano metal substrate use, and processing method is simple, easily grasps, and saves
The energy such as required a large amount of water, electricity, heat, three-waste free pollution when Common platings plate-making；
Seven, ultrathin nanometer metal layer of the invention with a thickness of 100-200nm, line width/line-spacing can be to 15/15um, even
10/10um or the requirement of more fine rule road, the design of Nanometer Copper meet FPC (flexible printed circuit board) or COF (flip chip encapsulation)
The graph thinning requirement of substrate, meets the production requirement of FPC manufacturer, reduces the product yield of FPC manufacturer, reduce processing
Cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of nano metal substrate of the present invention；
Fig. 2 is the preparation technology flow chart of nano metal substrate of the present invention；
Fig. 3 is the preparation technology flow chart of wiring board of the present invention；
Each section label is as follows in attached drawing:
100- low thermal expansion coefficient polyimide layer；
200- is roughened polyimide layer；
300- ultrathin nanometer metal layer；
301- silver metal layer, 302- copper metal layer and 303- nickel metal layer.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, so as to make a clearer definition of the protection scope of the present invention.
Embodiment: a kind of nano metal substrate, as shown in Figure 1, including low thermal expansion coefficient polyimide layer 100, being formed
In 100 two sides of low thermal expansion coefficient polyimide layer roughening polyimide layer 200 and be formed in roughening polyamides Asia
The ultrathin nanometer metal layer 300 of 200 another side of amine layer, the roughening polyimide layer 200 are poly- between the low thermal coefficient of expansion
Between imide layer 100 and the ultrathin nanometer metal layer 300；
The ultrathin nanometer metal layer 300 includes silver metal layer 301, the copper for being formed in 301 any surface of silver metal layer
Metal layer 302 and the nickel metal layer 303 for being formed in 302 another side of copper metal layer, the silver metal layer 301 is between described thick
Change between polyimide layer 200 and the copper metal layer 302, the copper metal layer 302 is between the silver metal layer 301 and described
Between nickel metal layer 303；
The low thermal expansion coefficient polyimide layer 100 with a thickness of 12.5-100um；
It is described roughening polyimide layer 200 with a thickness of 2-5um；
The ultrathin nanometer metal layer 300 with a thickness of 90-800nm, it is preferred that the ultrathin nanometer metal layer 300
With a thickness of 100-200nm, wherein the silver metal layer 301 with a thickness of 5-15nm, the copper metal layer 302 with a thickness of
90-150nm, the nickel metal layer 303 with a thickness of 5-15nm.
The thermal expansion coefficient of the low thermal expansion coefficient polyimide layer 100 is 4-19ppm/ DEG C.
The roughening polyimide layer 200 is that the face contacted with ultrathin nanometer metal layer is rough surface and surface roughness is situated between
Polyimide layer between 50-800nm.
Low thermal expansion coefficient polyimide layer and roughening polyimide layer use color be all black, yellow, white or
Transparent color, but not limited to this.
The ultrathin nanometer metal layer 300 is sputtered layer or electroplated layer.
The thermal expansion coefficient of the low thermal expansion coefficient polyimide layer 100 is 4-11ppm/ DEG C.
The low thermal expansion coefficient polyimide layer 100 with a thickness of 12.5-50um.
The roughening polyimide layer 200 is that the face contacted with ultrathin nanometer metal layer is rough surface and surface roughness is situated between
Polyimide layer between 80-800nm.
The structure for constituting the rough surface of the roughening polyimide layer 200 is: on the roughening polyimide layer 200
And the surface contacted with the ultrathin nanometer metal layer 300 is formed with powder roughened layer, the powder roughened layer is by inorganic matter
The material layer that the material layer or fire-retardant compound powder that powder is constituted are constituted.
The structure for constituting the rough surface of the roughening polyimide layer 200 can be by surface corona or plasma-based
Reason, the surface for being also possible to contact on the roughening polyimide layer 200 and with ultrathin nanometer metal layer could be formed with powder
Roughened layer, the powder roughened layer be by containing in silica, titanium dioxide, aluminium oxide, aluminium hydroxide and calcium carbonate extremely
The material layer or contain at least one of halogen, phosphorus system, nitrogen and boron system anti-flammability chemical combination that a kind of few inorganic material powder is constituted
The material layer that powder is constituted.
A kind of preparation method (as shown in Figure 2) of nano metal substrate, the preparation method is that in following methods at least
It is a kind of:
Method one: hole wall jet-plating metallization method
S1, a low thermal expansion coefficient polyimide layer is provided, it is sub- in low thermal coefficient of expansion polyamides using UV or machine drilling
Amine layer surface forms hole required for FPC is manufactured；
S2, the roughening polyimide layer through surface roughening treatment is pressed on the two sides of low thermal expansion coefficient polyimide layer,
Roughening hole wall is handled by plasma-based and removes the remaining glue residue of hole wall；
S3, it is roughened the surface of polyimide layer at two layers in a manner of sputter or plating and hole wall sequentially forms silver-colored gold respectively
Belong to layer, copper metal layer and nickel metal layer；
Method two: metal filling perforation method
S1, a low thermal expansion coefficient polyimide layer is provided, it is sub- in low thermal coefficient of expansion polyamides using UV or machine drilling
Amine layer surface forms hole required for FPC is manufactured；
S2, the roughening polyimide layer through surface roughening treatment is pressed on the two sides of low thermal expansion coefficient polyimide layer,
Roughening hole wall is handled by plasma-based and removes the remaining glue residue of hole wall；
S3, the electrocondution slurry of the high solid granule content containing special formulation (be can be into copper, silver, nickel, carbon or other gold
The mixed slurry of category) it is penetrated into prefabricated hole by biting for halftone, it is acted on using capillary air draught, makes to fill cylinder in aperture
Or the electrocondution slurry of rivet type structure, interconnection hole is formed, then baking makes its solidification；
S4, in a manner of sputter or plating two layers be roughened polyimide layer surface sequentially form respectively silver metal layer,
Copper metal layer and nickel metal layer.
A kind of preparation method (as shown in Figure 3) of the wiring board containing the substrate, comprising the following steps:
S1, the wherein one side of nano metal substrate ultrathin nanometer metal layer set primary antibody plating photoresist layer；
S2, above-mentioned plating resist photoresist layer is exposed and is developed according to wiring board configuration pattern, locally expose ultrathin nanometer to the open air
Metal layer and remaining plating resist photoresist layer；
S3, the ultrathin nanometer metal layer and plating resist photoresist layer being exposed are removed using etching method；
S4, copper facing is carried out to required thickness using surface of the galvanoplastic to wiring board.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure transformation made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant technical fields,
Similarly it is included within the scope of the present invention.
Claims (10)
1. a kind of nano metal substrate, it is characterised in that: the substrate includes low thermal expansion coefficient polyimide layer, is formed in institute
It states the roughening polyimide layer on low thermal expansion coefficient polyimide layer two sides and is formed in the roughening polyimide layer another side
Ultrathin nanometer metal layer, the roughening polyimide layer is between the low thermal expansion coefficient polyimide layer and described ultra-thin receives
Between rice metal layer；
The ultrathin nanometer metal layer includes silver metal layer, the copper metal layer for being formed in the silver metal layer any surface and is formed in
The nickel metal layer of the copper metal layer another side, the silver metal layer is between the roughening polyimide layer and the copper metal layer
Between, the copper metal layer is between the silver metal layer and the nickel metal layer；
The low thermal expansion coefficient polyimide layer with a thickness of 12.5-100um；
It is described roughening polyimide layer with a thickness of 2-5um；
The ultrathin nanometer metal layer with a thickness of 90-800nm, wherein the silver metal layer with a thickness of 5-15nm, the copper
Metal layer with a thickness of 90-150nm, the nickel metal layer with a thickness of 5-15nm.
2. nano metal substrate according to claim 1, it is characterised in that: the low thermal expansion coefficient polyimide layer
Thermal expansion coefficient is 4-19ppm/ DEG C.
3. nano metal substrate according to claim 1, it is characterised in that: the roughening polyimide layer is received with ultra-thin
The face of rice metal layer contact is the polyimide layer of rough surface and surface roughness between 50-800nm.
4. nano metal substrate according to claim 1, it is characterised in that: the ultrathin nanometer metal layer be sputtered layer or
Electroplated layer.
5. nano metal substrate according to claim 1, it is characterised in that: the low thermal expansion coefficient polyimide layer
Thermal expansion coefficient is 4-11ppm/ DEG C.
6. nano metal substrate according to claim 1, it is characterised in that: the low thermal expansion coefficient polyimide layer
With a thickness of 12.5-50um.
7. nano metal substrate according to claim 1, it is characterised in that: the roughening polyimide layer is received with ultra-thin
The face of rice metal layer contact is the polyimide layer of rough surface and surface roughness between 80-800nm.
8. nano metal substrate according to claim 3, it is characterised in that: constitute the described of the roughening polyimide layer
The structure of rough surface is: the surface contacted on the roughening polyimide layer and with the ultrathin nanometer metal layer is formed with powder
Roughened layer, the powder roughened layer are the material layer being made of inorganic material powder or the material that fire-retardant compound powder is constituted
Layer.
9. the preparation method of nano metal substrate according to claim 1, it is characterised in that: the preparation method is that following
At least one of method:
Method one: hole wall jet-plating metallization method
S1, a low thermal expansion coefficient polyimide layer is provided, using UV or machine drilling in low thermal expansion coefficient polyimide layer
Surface forms hole required for FPC is manufactured；
S2, the roughening polyimide layer through surface roughening treatment is pressed on the two sides of low thermal expansion coefficient polyimide layer；
S3, the surface and hole wall for being roughened polyimide layer at two layers in a manner of sputter or plating sequentially form silver metal respectively
Layer, copper metal layer and nickel metal layer；
Method two: metal filling perforation method
S1, a low thermal expansion coefficient polyimide layer is provided, using UV or machine drilling in low thermal expansion coefficient polyimide layer
Surface forms hole required for FPC is manufactured；
S2, the roughening polyimide layer through surface roughening treatment is pressed on the two sides of low thermal expansion coefficient polyimide layer；
S3, the electrocondution slurry of the high solid granule content containing special formulation (be can be into copper, silver, nickel, carbon or other metals
Mixed slurry) it is penetrated into prefabricated hole by biting for halftone, it is acted on using capillary air draught, makes to fill cylinder or riveting in aperture
The electrocondution slurry of nail type structure forms interconnection hole, and then baking makes its solidification；
S4, the surface for being roughened polyimide layer at two layers in a manner of sputter or plating sequentially form silver metal layer, copper gold respectively
Belong to layer and nickel metal layer.
10. a kind of preparation method of the wiring board containing substrate described in claim 1, it is characterised in that: the following steps are included:
S1, the wherein one side of nano metal substrate ultrathin nanometer metal layer set primary antibody plating photoresist layer；
S2, above-mentioned plating resist photoresist layer is exposed and is developed according to wiring board configuration pattern, locally expose ultrathin nanometer metal to the open air
Layer and remaining plating resist photoresist layer；
S3, the ultrathin nanometer metal layer and plating resist photoresist layer being exposed are removed using etching method；
S4, copper facing is carried out to required thickness using surface of the galvanoplastic to wiring board.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710413493.5A CN108990261A (en) | 2017-06-05 | 2017-06-05 | The preparation method of nano metal substrate and preparation method and the wiring board containing the substrate |
| TW107117525A TWI669031B (en) | 2017-06-05 | 2018-05-23 | Composite metal substrate and method for manufacturing the same and circuit board |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710413493.5A CN108990261A (en) | 2017-06-05 | 2017-06-05 | The preparation method of nano metal substrate and preparation method and the wiring board containing the substrate |
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1129852A (en) * | 1997-07-14 | 1999-02-02 | Tomoegawa Paper Co Ltd | Production of composite film of polyimide film-metal film |
| CN1505918A (en) * | 2001-05-01 | 2004-06-16 | 奥克-三井有限公司 | Substrate adhesion enhancement to film |
| CN101208195A (en) * | 2005-04-19 | 2008-06-25 | 株式会社钟化 | Fiber-resin composite material, multilayer body, printed wiring board, and method for manufacturing printed wiring board |
| CN101322447A (en) * | 2005-10-14 | 2008-12-10 | 宇部兴产株式会社 | Process for producing polyimide film with copper wiring |
| CN102529271A (en) * | 2011-12-23 | 2012-07-04 | 云南云天化股份有限公司 | Polyimide thin film for flexible circuit board, and preparation method thereof |
| CN103813639A (en) * | 2013-11-07 | 2014-05-21 | 溧阳市江大技术转移中心有限公司 | Method for forming conductive circuit on flexible substrate |
| CN104645495A (en) * | 2015-02-03 | 2015-05-27 | 广东泰宝医疗科技股份有限公司 | Preparation method of base material of ionic induction plaster |
| CN104672448A (en) * | 2014-06-30 | 2015-06-03 | 广东丹邦科技有限公司 | Polyimide resin and application thereof, two-layer adhesiveless base material and preparation method of two-layer adhesiveless base material |
| CN104981099A (en) * | 2015-06-18 | 2015-10-14 | 镇江华印电路板有限公司 | High-precision through hole plate |
| CN105199326A (en) * | 2014-06-30 | 2015-12-30 | 味之素株式会社 | Resin composition |
| CN105969242A (en) * | 2015-07-16 | 2016-09-28 | 东洋油墨Sc控股株式会社 | Conductive adhesive layer, conductive adhesive sheet, printing wiring board and electronic machine |
| CN106413266A (en) * | 2015-07-29 | 2017-02-15 | 苏州卫鹏机电科技有限公司 | Preparation method of polyimide non-adhesive flexible printed circuit board |
| CN206067098U (en) * | 2016-08-30 | 2017-04-05 | 昆山雅森电子材料科技有限公司 | High shielding emi shielding film with double-level-metal layer |
-
2017
- 2017-06-05 CN CN201710413493.5A patent/CN108990261A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1129852A (en) * | 1997-07-14 | 1999-02-02 | Tomoegawa Paper Co Ltd | Production of composite film of polyimide film-metal film |
| CN1505918A (en) * | 2001-05-01 | 2004-06-16 | 奥克-三井有限公司 | Substrate adhesion enhancement to film |
| CN101208195A (en) * | 2005-04-19 | 2008-06-25 | 株式会社钟化 | Fiber-resin composite material, multilayer body, printed wiring board, and method for manufacturing printed wiring board |
| CN101322447A (en) * | 2005-10-14 | 2008-12-10 | 宇部兴产株式会社 | Process for producing polyimide film with copper wiring |
| CN102529271A (en) * | 2011-12-23 | 2012-07-04 | 云南云天化股份有限公司 | Polyimide thin film for flexible circuit board, and preparation method thereof |
| CN103813639A (en) * | 2013-11-07 | 2014-05-21 | 溧阳市江大技术转移中心有限公司 | Method for forming conductive circuit on flexible substrate |
| CN105199326A (en) * | 2014-06-30 | 2015-12-30 | 味之素株式会社 | Resin composition |
| CN104672448A (en) * | 2014-06-30 | 2015-06-03 | 广东丹邦科技有限公司 | Polyimide resin and application thereof, two-layer adhesiveless base material and preparation method of two-layer adhesiveless base material |
| CN104645495A (en) * | 2015-02-03 | 2015-05-27 | 广东泰宝医疗科技股份有限公司 | Preparation method of base material of ionic induction plaster |
| CN104981099A (en) * | 2015-06-18 | 2015-10-14 | 镇江华印电路板有限公司 | High-precision through hole plate |
| CN105969242A (en) * | 2015-07-16 | 2016-09-28 | 东洋油墨Sc控股株式会社 | Conductive adhesive layer, conductive adhesive sheet, printing wiring board and electronic machine |
| CN106413266A (en) * | 2015-07-29 | 2017-02-15 | 苏州卫鹏机电科技有限公司 | Preparation method of polyimide non-adhesive flexible printed circuit board |
| CN206067098U (en) * | 2016-08-30 | 2017-04-05 | 昆山雅森电子材料科技有限公司 | High shielding emi shielding film with double-level-metal layer |
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