CN108987500B - 金属纳米线和多孔氮化物复合材料半导体及其制备方法 - Google Patents

金属纳米线和多孔氮化物复合材料半导体及其制备方法 Download PDF

Info

Publication number
CN108987500B
CN108987500B CN201810722928.9A CN201810722928A CN108987500B CN 108987500 B CN108987500 B CN 108987500B CN 201810722928 A CN201810722928 A CN 201810722928A CN 108987500 B CN108987500 B CN 108987500B
Authority
CN
China
Prior art keywords
layer
porous nitride
metal nanowire
porous
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810722928.9A
Other languages
English (en)
Other versions
CN108987500A (zh
Inventor
赵丽霞
李婧
杨超
于治国
席鑫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Semiconductors of CAS
University of Chinese Academy of Sciences
Original Assignee
Institute of Semiconductors of CAS
University of Chinese Academy of Sciences
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Semiconductors of CAS, University of Chinese Academy of Sciences filed Critical Institute of Semiconductors of CAS
Priority to CN201810722928.9A priority Critical patent/CN108987500B/zh
Priority to PCT/CN2018/110866 priority patent/WO2020006928A1/zh
Priority to US17/256,762 priority patent/US20220088579A1/en
Publication of CN108987500A publication Critical patent/CN108987500A/zh
Application granted granted Critical
Publication of CN108987500B publication Critical patent/CN108987500B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
    • B01J21/02—Boron or aluminium; Oxides or hydroxides thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
    • B01J23/48—Silver or gold
    • B01J23/50—Silver
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
    • B01J23/48—Silver or gold
    • B01J23/52—Gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/24—Nitrogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/20—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state
    • B01J35/23—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state in a colloidal state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/33—Electric or magnetic properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/39—Photocatalytic properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0201—Impregnation
    • B01J37/0207—Pretreatment of the support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0215—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/024—Multiple impregnation or coating
    • B01J37/0242—Coating followed by impregnation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
    • B01J37/348—Electrochemical processes, e.g. electrochemical deposition or anodisation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/04—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
    • C01B3/042—Decomposition of water
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/042—Electrodes formed of a single material
    • C25B11/049—Photocatalysts
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
    • C25B11/075—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound
    • C25B11/087—Photocatalytic compound
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/46—Electroplating: Baths therefor from solutions of silver
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/48—Electroplating: Baths therefor from solutions of gold
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/625—Discontinuous layers, e.g. microcracked layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/12—Feeding the process for making hydrogen or synthesis gas
    • C01B2203/1258—Pre-treatment of the feed
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/42—Electroplating: Baths therefor from solutions of light metals
    • C25D3/44—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Catalysts (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Dispersion Chemistry (AREA)

Abstract

一种金属纳米线和多孔氮化物复合材料半导体，包括：衬底；缓冲层，位于衬底之上；复合材料层，位于所述缓冲层之上，包括横向多孔氮化物模板层，以及填充于其多孔中的金属纳米线，上述复合材料半导体的制备方法包括：步骤1：在衬底上生长制备缓冲层和n型氮化物外延层；步骤2：将步骤1所制备的n型氮化物外延层制成横向多孔氮化物模板层；步骤3：在步骤2所制备的横向多孔氮化物模板层的孔中制备金属纳米线，得到复合材料层，制成金属纳米线和多孔氮化物复合材料半导体，以缓解现有技术中半导体材料在光电化学反应过程中易被腐蚀，利用局域表面等离子体增强效应提高半导体内部材料的光电特性时制备工艺复杂，易损伤体材料等技术问题。

Description

金属纳米线和多孔氮化物复合材料半导体及其制备方法
技术领域
本公开涉及新材料及材料制备领域，尤其涉及一种金属纳米线和多孔氮化物复合材料半导体及其制备方法。
背景技术
以GaN为代表的III族氮化物为直接带隙半导体材料，其带隙可通过调整并入的Al或者In的比例覆盖整个太阳光谱，同时具有高的击穿电压、强的抗辐射能力、高的电子迁移率、良好的热稳定性和化学稳定性等诸多优势，与传统的块材相比，横向多孔氮化物还具有比表面积大、横向多孔通道及孔壁上纳米尺度效应及界面效应等特点，可以有效地增强其光电响应特性、非线性光学特性以及光催化特性等性能，在发光、探测、催化及纳米光电子学等领域具有巨大的应用潜力。
贵金属如Au、Ag、Al及其合金的等离子能量与氮化物的带宽接近，是紫外、可见光以及近红外波段范围内激发表面等离子体的首选材料，被广泛地应用于表面等离子体增强的氮化物发光及探测器件中，同时，Au、Ag化学性质稳定，在光电化学反应过程中不易被腐蚀，可以作为还原反应的活性点，有效地捕获半导体表面的光生电子，大大提高氮化物的光催化效率，然而在这些应用中，一方面只在半导体表面引入贵金属，在光辐照下在金属和半导体界面处产生局域表面等离子体增强效应，不利于提高半导体体材料内部的光电特性；另一方面，通过在材料生长中引入或在后续流片工艺中通过干法刻蚀等方式将贵金属引入半导体内部，需要考虑材料生长的复杂因素，且会存在干法刻蚀损伤造成的漏电等问题。
公开内容
(一)要解决的技术问题
本公开提供了一种金属纳米线和多孔氮化物复合材料半导体及其制备方法，以缓解现有技术中半导体材料在光电化学反应过程中易被腐蚀，利用局域表面等离子体增强效应提高半导体内部材料的光电特性时制备工艺复杂，易损伤体材料等技术问题。
(二)技术方案
本公开提供一种金属纳米线和多孔氮化物复合材料半导体，包括：衬底；缓冲层，位于衬底之上；复合材料层，位于所述缓冲层之上，包括横向多孔氮化物模板层以及填充于其多孔中的金属纳米线。
在本公开实施例中，所述横向多孔氮化物模板层制备材料包括：GaN、InGaN、AlGaN或AlInGaN。
在本公开实施例中，所述横向多孔氮化物模板层中孔的直径为5～100nm，孔道长度为1～300μm。
在本公开实施例中，所述金属纳米线的制备材料包括：Au、Ag或Al。
在本公开实施例中，所述金属纳米线的直径为5～100nm，长度为5nm～300μm。
在本公开实施例中，所述金属纳米线为单晶。
在本公开实施例中，所述金属纳米线的形貌包括：圆柱形或三角柱形。
在本公开实施例中，所述缓冲层的制备材料包括：低温生长的GaN、AlN、ZnO或石墨烯。
在本公开中还提供一种制备方法，用于制备上述任一项所述的金属纳米线和多孔氮化物复合材料半导体，包括：步骤1：在衬底上生长制备缓冲层和n型氮化物外延层；步骤2：将步骤1所制备的n型氮化物外延层制成横向多孔氮化物模板层；步骤3：在步骤2所制备的横向多孔氮化物模板层的孔中制备金属纳米线，得到复合材料层，制成金属纳米线和多孔氮化物复合材料半导体。
在本公开实施例中，所述步骤3中采用电化学沉积的方法制备出复合材料层，具体包括：配制电镀液，将所述横向多孔氮化物模板层浸泡入所述电镀液中，将浸泡后的横向多孔氮化物模板层为工作电极、Pt片为对电极、Ag/AgCl电极为参比电极，在一定温度下，进行电镀沉积得到金属纳米线，制得复合材料层。
(三)有益效果
从上述技术方案可以看出，本公开金属纳米线和多孔氮化物复合材料半导体及其制备方法至少具有以下有益效果其中之一或其中一部分：
(1)通过金属纳米线的表面等离子体共振引起的局部电场增强，提高了其对可见光到紫外波段的光响应能力；
(2)制备工艺环保、经济。
附图说明
图1为本公开实施例的基于金属纳米线和多孔氮化物复合材料半导体的三维结构示意图。
图2为本公开实施例的基于Ag纳米线和横向多孔GaN复合材料截面的-扫描电子显微镜结果示意图；
图3为本公开实施例的基于Ag纳米线和横向多孔GaN复合材料的局部放大的XRD示意图；
图4为本公开实施例的基于Ag纳米线和横向多孔GaN复合材料在300nm～800nm光辐照下的吸收谱示意图；
图5为本公开实施例的基于Ag纳米线和横向多孔GaN复合材料的光水解实验的光电流-电压示意图；
图6为本公开实施例的基于Ag纳米线和横向多孔GaN复合材料半导体的紫外光电探测器实验的光谱响应示意图；
图7为本公开实施例的基于Ag纳米线和横向多孔氮化物复合材料的制备流程图。
【附图中本公开实施例主要元件符号说明】
10-衬底；20-缓冲层；
30-复合材料层；
31-横向多孔氮化物模板层；32-金属纳米线。
具体实施方式
本公开提供了一种金属纳米线和多孔氮化物复合材料半导体及其制备方法，通过金属纳米线的表面等离子体共振引起的局部电场增强，提高了金属纳米线和多孔氮化物复合材料对可见光到紫外波段的光响应及提取能力，且制备工艺简单、环保、经济，以缓解现有技术中半导体材料在光电化学反应过程中易被腐蚀，利用局域表面等离子体增强效应提高半导体内部材料的光电特性时制备工艺复杂，易损伤体材料等技术问题。
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开进一步详细说明。
在本公开实施例中，提供一种金属纳米线和多孔氮化物复合材料半导体，图1为所述金属纳米线和多孔氮化物复合材料半导体的三维结构示意图，如图1所示，所述的复合材料，包括：
衬底10；
缓冲层20，位于衬底之上；
复合材料层30，位于所述缓冲层之上，包括：
横向多孔氮化物模板层31，用于为金属纳米线的合成提供电化学路径；以及
金属纳米线32，填充于横向多孔氮化物模板层的多孔中。
在本公开实施例中，所述衬底10的制备材料包括：蓝宝石、硅或碳化硅。
所述衬底结构包括：平面或图形。
在本公开实施例中，所述缓冲层20制备材料包括：低温生长的GaN、AlN、ZnO或石墨烯。
在本公开实施例中，所述横向多孔氮化物模板层31的制备材料包括：GaN、InGaN、AlGaN或AlInGaN。
在本公开实施例中，所述横向多孔氮化物层31为n型重掺杂。
在本公开实施例中，所述横向多孔氮化物层31中的孔的直径为5～100nm，孔道长度为1～300μm。
在本公开实施例中，所述横向多孔氮化物层31中的孔形貌包括：圆柱形、三角柱形或者二者交替的混合形。
在本公开实施例中，所述金属纳米线32包括：Au、Ag或Al。
在本公开实施例中，所述金属纳米线32为单晶。
在本公开实施例中，所述金属纳米线直径为5～100nm，长度为5nm～300μm。
在本公开实施例中，所述金属纳米线形貌包括：圆柱形、三角柱形或二者交替的混合形。
在本公开实施例中，所述金属纳米线和多孔氮化物复合材料半导体在紫外到可见光范围内均有较强的光响应及提取能力，可以广泛应用于光解水制氢及等离子体增强的半导体探测及发光领域。
在本公开实施例中，图2为基于Ag纳米线和横向多孔GaN复合材料截面的扫描电子显微镜结果示意图，如图2所示，图2以500nm为参考比例，本公开实施例中的横向多孔GaN层31的孔径优选为40nm，孔道长度为150μm，Ag纳米线32的直径优选为40nm，横向多孔GaN层31和Ag纳米线32紧密结合构成Ag纳米线和横向多孔GaN复合材料层。
在本公开实施例中，图3为基于Ag纳米线和横向多孔GaN复合材料的局部放大的XRD(X-ray diffraction，X射线衍射)示意图，如图3所示，本公开实施例中的Ag纳米线32的晶相为立方相，结晶的晶向为(111)。
在本公开实施例中，图4为基于Ag纳米线和横向多孔GaN复合材料的在300nm～800nm光辐照下的吸收谱示意图，如图4所示，本公开实施例中的Ag纳米线和多孔氮化物复合材料在300nm～800nm的紫外到可见光范围内均有较强的吸收，突破了现有GaN只有在紫外光下才能起到的光催化效果的技术瓶颈，在光催化领域具有广阔的应用前景。
在本公开实施例中，图5为基于Ag纳米线和横向多孔GaN复合材料的光水解实验的光电流-电压示意图，如图5所示，与单纯的横向多孔GaN相比，其光生电流提高了1.4倍以上。
在本公开实施例中，图6为基于Ag纳米线和横向多孔GaN复合材料的紫外光电探测器实验的光谱响应示意图，如图6所示，与单纯的横向多孔GaN相比，在2V的反向偏压下，其光响应度提高了14倍以上，提高了GaN体材料的光电转化效率，在表面等离子体增强的半导体探测器领域具有实际的应用前景。
在本公开中，还提供一种金属纳米线和多孔氮化物复合材料半导体的制备方法，图7为所述制备方法的流程示意图，如图所示，所述制备方法包括：
步骤1：在衬底10上生长制备缓冲层20和n型氮化物外延层；
采用金属有机物化学气相淀积的方法，在衬底10上依次生长低温缓冲层20和n型氮化物外延层；
步骤2：将步骤1所制备的n型氮化物外延层制成横向多孔氮化物模板层31；
采用电化学腐蚀的方法在n型氮化物外延层上制备出横向多孔氮化物模板层31，并用去离子水超声清洗去除残余电化学腐蚀的电解液；
步骤3：在步骤2所制备的横向多孔氮化物模板层31的孔中制备金属纳米线32，得到复合材料层30，进而制得金属纳米线和横向多孔氮化物复合材料半导体。
所述步骤3中，以横向多孔氮化物模板层31作载体，采用电化学沉积的方法，制备出金属纳米线和多孔氮化物复合材料层30，具体步骤包括：配制电镀液，所述电镀液包括AgNO3/H3BO3、HAuCl4/Na2SO3/Na2S2O3或AlCl3/NaCl/KCl混合溶液，将所述横向多孔氮化物模板层31浸泡入所述电镀液中，将所述浸泡后的横向多孔氮化物模板层31为工作电极、Pt片为对电极、Ag/AgCl电极为参比电极，在一定温度下，进行电镀沉积金属纳米线，得到复合材料层30，进而制得金属纳米线和横向多孔氮化物复合材料半导体。
在本公开实施例中，步骤1中所述的n型氮化物外延层掺杂浓度为1018cm-3～1019cm-3。
在本公开实施例中，步骤2中所述电化学腐蚀的电解液为70wt％的浓硝酸或者1mol/L的NaOH，电化学腐蚀的电压为5～60V。
在本公开实施例中，步骤2中所述用去离子水超声清洗的时间为10～30min，超声频率可为100Hz。
在本公开实施例中，步骤3中所述AgNO3浓度为0.01～0.05mol/L，H3BO3浓度为0.01～0.05mol/L，HAuCl4浓度为0.005～0.05mol/L，Na2SO3浓度为0.04～0.5mol/L，Na2S2O3浓度为0.04～0.5mol/L，AlCl3溶液浓度为0.01～0.05mol/L，NaCl溶液浓度为0.005～0.01mol/L，KCl溶液浓度为0.005～0.01mol/L。
在本公开实施例中，步骤3中所述温度为25～150℃。
在本公开实施例中，步骤3中所述电解液需搅拌溶解30～120min。
在本公开实施例中，步骤3中所述浸泡的时间为30～120min。
在本公开实施例中，步骤3中所述电化学沉积的方法包括：恒压法、恒流法、脉冲电压法，沉积电压为0.9～6V，沉积电流为0.1～3mA，脉冲周期为10～100、占空比为3∶1，沉积时间为30～120min。
至此，已经结合附图对本公开实施例进行了详细描述。需要说明的是，在附图或说明书正文中，未绘示或描述的实现方式，均为所属技术领域中普通技术人员所知的形式，并未进行详细说明。此外，上述对各元件和方法的定义并不仅限于实施例中提到的各种具体结构、形状或方式，本领域普通技术人员可对其进行简单地更改或替换。
依据以上描述，本领域技术人员应当对本公开金属纳米线和多孔氮化物复合材料半导体及其制备方法有了清楚的认识。
综上所述，本公开提供了一种金属纳米线和多孔氮化物复合材料半导体及其制备方法，通过金属纳米线的表面等离子体共振引起的局部电场增强，提高了金属纳米线和多孔氮化物复合材料对可见光到紫外波段的光响应及提取能力，且制备工艺简单、环保、经济，能够缓解现有技术中半导体材料在光电化学反应过程中易被腐蚀，利用局域表面等离子体增强效应提高半导体内部材料的光电特性时制备工艺复杂，易损伤体材料等技术问题。
还需要说明的是，实施例中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向，并非用来限制本公开的保护范围。贯穿附图，相同的元素由相同或相近的附图标记来表示。在可能导致对本公开的理解造成混淆时，将省略常规结构或构造。
并且图中各部件的形状和尺寸不反映真实大小和比例，而仅示意本公开实施例的内容。另外，在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。
除非有所知名为相反之意，本说明书及所附权利要求中的数值参数是近似值，能够根据通过本公开的内容所得的所需特性改变。具体而言，所有使用于说明书及权利要求中表示组成的含量、反应条件等等的数字，应理解为在所有情况中是受到「约」的用语所修饰。一般情况下，其表达的含义是指包含由特定数量在一些实施例中±10％的变化、在一些实施例中±5％的变化、在一些实施例中±1％的变化、在一些实施例中±0.5％的变化。
再者，单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。
说明书与权利要求中所使用的序数例如“第一”、“第二”、“第三”等的用词，以修饰相应的元件，其本身并不意味着该元件有任何的序数，也不代表某一元件与另一元件的顺序、或是制造方法上的顺序，该些序数的使用仅用来使具有某命名的一元件得以和另一具有相同命名的元件能做出清楚区分。
此外，除非特别描述或必须依序发生的步骤，上述步骤的顺序并无限制于以上所列，且可根据所需设计而变化或重新安排。并且上述实施例可基于设计及可靠度的考虑，彼此混合搭配使用或与其他实施例混合搭配使用，即不同实施例中的技术特征可以自由组合形成更多的实施例。
本领域那些技术人员可以理解，可以对实施例中的设备中的模块进行自适应性地改变并且把它们设置在与该实施例不同的一个或多个设备中。可以把实施例中的模块或单元或组件组合成一个模块或单元或组件，以及此外可以把它们分成多个子模块或子单元或子组件。除了这样的特征和/或过程或者单元中的至少一些是相互排斥之外，可以采用任何组合对本说明书(包括伴随的权利要求、摘要和附图)中公开的所有特征以及如此公开的任何方法或者设备的所有过程或单元进行组合。除非另外明确陈述，本说明书(包括伴随的权利要求、摘要和附图)中公开的每个特征可以由提供相同、等同或相似目的的替代特征来代替。并且，在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。
类似地，应当理解，为了精简本公开并帮助理解各个公开方面中的一个或多个，在上面对本公开的示例性实施例的描述中，本公开的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开的方法解释成反映如下意图：即所要求保护的本公开要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如下面的权利要求书所反映的那样，公开方面在于少于前面公开的单个实施例的所有特征。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本公开的单独实施例。
以上所述的具体实施例，对本公开的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本公开的具体实施例而已，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (10)

1.一种金属纳米线和多孔氮化物复合材料半导体，包括：
衬底(10)；
缓冲层(20)，位于衬底之上；
复合材料层(30)，位于所述缓冲层之上，包括横向多孔氮化物模板层(31)以及填充于其多孔中的金属纳米线(32)；
所述横向多孔氮化物模板层(31)，用于为金属纳米线的合成提供电化学路径。
2.根据权利要求1所述的金属纳米线和多孔氮化物复合材料半导体，其中，所述横向多孔氮化物模板层(31)制备材料包括：GaN、InGaN、AlGaN或AlInGaN。
3.根据权利要求1所述的金属纳米线和多孔氮化物复合材料半导体，其中，所述横向多孔氮化物模板层(31)中孔的直径为5～100nm，孔道长度为1～300μm。
4.根据权利要求1所述的金属纳米线和多孔氮化物复合材料半导体，其中，所述金属纳米线(32)的制备材料包括：Au、Ag或Al。
5.根据权利要求1所述的金属纳米线和多孔氮化物复合材料半导体，其中，所述金属纳米线(32)的直径为5～100nm，长度为5nm～300μm。
6.根据权利要求1所述的金属纳米线和多孔氮化物复合材料半导体，其中，所述金属纳米线(32)为单晶。
7.根据权利要求1所述的金属纳米线和多孔氮化物复合材料半导体，其中，所述金属纳米线(32)的形貌包括：圆柱形或三角柱形。
8.根据权利要求1所述的金属纳米线和多孔氮化物复合材料半导体，其中，所述缓冲层(20)的制备材料包括：低温生长的GaN、AlN、ZnO或石墨烯。
9.一种制备方法，用于制备权利要求1至8任一项所述的金属纳米线和多孔氮化物复合材料半导体，包括：
步骤1：在衬底(10)上生长制备缓冲层(20)和n型氮化物外延层；
步骤2：将步骤1所制备的n型氮化物外延层制成横向多孔氮化物模板层(31)；
步骤3：在步骤2所制备的横向多孔氮化物模板层(31)的孔中制备金属纳米线(32)，得到复合材料层(30)，制成金属纳米线和多孔氮化物复合材料半导体。
10.根据权利要求9所述的制备方法，其中，步骤3中采用电化学沉积的方法制备出复合材料层(30)，具体包括：配制电镀液，将所述横向多孔氮化物模板层(31)浸泡入所述电镀液中，将浸泡后的横向多孔氮化物模板层(31)为工作电极、Pt片为对电极、Ag/AgCl电极为参比电极，在一定温度下，进行电镀沉积得到金属纳米线，制得复合材料层(30)方法。
CN201810722928.9A 2018-07-04 2018-07-04 金属纳米线和多孔氮化物复合材料半导体及其制备方法 Active CN108987500B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201810722928.9A CN108987500B (zh) 2018-07-04 2018-07-04 金属纳米线和多孔氮化物复合材料半导体及其制备方法
PCT/CN2018/110866 WO2020006928A1 (zh) 2018-07-04 2018-10-18 基于金属纳米线和多孔氮化物的半导体材料及其制备方法
US17/256,762 US20220088579A1 (en) 2018-07-04 2018-10-18 Semiconductor material based on metal nanowires and porous nitride and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810722928.9A CN108987500B (zh) 2018-07-04 2018-07-04 金属纳米线和多孔氮化物复合材料半导体及其制备方法

Publications (2)

Publication Number Publication Date
CN108987500A CN108987500A (zh) 2018-12-11
CN108987500B true CN108987500B (zh) 2020-04-21

Family

ID=64536081

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810722928.9A Active CN108987500B (zh) 2018-07-04 2018-07-04 金属纳米线和多孔氮化物复合材料半导体及其制备方法

Country Status (3)

Country Link
US (1) US20220088579A1 (zh)
CN (1) CN108987500B (zh)
WO (1) WO2020006928A1 (zh)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968359B2 (en) * 2006-03-10 2011-06-28 Stc.Unm Thin-walled structures
CN101689567A (zh) * 2007-01-10 2010-03-31 索拉里蒂股份有限公司 横向收集光伏
CN101220466B (zh) * 2007-12-14 2010-06-09 中国科学院上海微***与信息技术研究所 钨辅助热退火制备氮化镓纳米线的制备方法
JP5988974B2 (ja) * 2010-08-07 2016-09-07 ティーピーケイ ホールディング カンパニー リミテッド 表面埋込添加物を有する素子構成要素および関連製造方法
US20120094192A1 (en) * 2010-10-14 2012-04-19 Ut-Battelle, Llc Composite nanowire compositions and methods of synthesis
CN103247709B (zh) * 2013-05-23 2016-06-01 中国科学院长春光学精密机械与物理研究所 增强AlGaN基深紫外探测器响应度的方法
KR102220405B1 (ko) * 2014-07-25 2021-02-25 삼성전자주식회사 광학소자 및 이를 포함한 전자 장치
CN104362232B (zh) * 2014-10-28 2019-03-29 天津三安光电有限公司 一种发光二极管
CN107611231B (zh) * 2017-08-31 2019-10-11 西安交通大学 基于纳米压印制备具有表面等离子体的垂直结构的发光二极管的方法

Also Published As

Publication number Publication date
CN108987500A (zh) 2018-12-11
US20220088579A1 (en) 2022-03-24
WO2020006928A1 (zh) 2020-01-09

Similar Documents

Publication Publication Date Title
Jang et al. Selective CO production by Au coupled ZnTe/ZnO in the photoelectrochemical CO 2 reduction system
Lu et al. Facile synthesis of free-standing CeO 2 nanorods for photoelectrochemical applications
Zoolfakar et al. Enhancing the current density of electrodeposited ZnO–Cu 2 O solar cells by engineering their heterointerfaces
Hayashi et al. High stability and efficiency of GaN photocatalyst for hydrogen generation from water
JP5885662B2 (ja) 光触媒材料および光触媒装置
Yang et al. Increased photocurrent response in Nb-doped TiO 2 nanotubes
Feng et al. Alumina anchored CQDs/TiO 2 nanorods by atomic layer deposition for efficient photoelectrochemical water splitting under solar light
JP5236124B1 (ja) 二酸化炭素を還元する方法
US9551077B2 (en) Photoelectrode used for carbon dioxide reduction and method for reducing carbon dioxide using the photoelectrode
Hwang et al. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation
Alizadeh et al. Cu2O/InGaN heterojunction thin films with enhanced photoelectrochemical activity for solar water splitting
WO2021098149A1 (zh) 表面等离激元增强型InGaN/GaN多量子阱光电极及其制备方法
Xu et al. Correlations among morphology, composition, and photoelectrochemical water splitting properties of InGaN nanorods grown by molecular beam epitaxy
Tyagi et al. Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting
Wang et al. Enhanced photoelectrochemical response in SrTiO 3 films decorated with carbon quantum dots
Park et al. A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure
CN109402653A (zh) 一种Si衬底上InGaN纳米柱@Au纳米粒子复合结构及其制备方法与应用
WO2014006864A1 (ja) アルコールを生成する方法
Reddeppa et al. Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods
Tyona et al. A review of zinc oxide photoanode films for dye-sensitized solar cells based on zinc oxide nanostructures
Shet Zinc oxide (ZnO) nanostructures for photoelectrochemical water splitting application
Dang et al. MoS2 hydrogen evolution catalysis on p-Si nanorod photocathodes
Han et al. CdSe-sensitized branched CdS hierarchical nanostructures for efficient photoelectrochemical solar hydrogen generation
Zhao et al. InGaN/Cu2O heterostructure core-shell nanowire photoanode for efficient solar water splitting
Li et al. UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant