CN108987296B - Wafer elastic strain measuring device, measuring method and wafer bonding method - Google Patents
Wafer elastic strain measuring device, measuring method and wafer bonding method Download PDFInfo
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- CN108987296B CN108987296B CN201810920342.3A CN201810920342A CN108987296B CN 108987296 B CN108987296 B CN 108987296B CN 201810920342 A CN201810920342 A CN 201810920342A CN 108987296 B CN108987296 B CN 108987296B
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000005259 measurement Methods 0.000 claims abstract description 24
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 307
- 238000001179 sorption measurement Methods 0.000 claims description 13
- 238000003825 pressing Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000015654 memory Effects 0.000 abstract description 18
- 238000000691 measurement method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 46
- 238000012360 testing method Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a wafer elastic strain measurement device, a measurement method, and a wafer bonding method. The wafer elastic strain measurement device comprises: the bearing part is provided with a wafer bearing surface and an air charging hole positioned on the wafer bearing surface; the fixing part is arranged on the bearing part and surrounds the air charging hole, and is used for fixing and attaching the surface edge of the wafer to the wafer bearing surface, so that the wafer can be deformed and a cavity is formed between the wafer and the wafer bearing surface when the air charging hole is filled with air; and the detection part is used for measuring the deformation of the wafer after the gas is introduced. The invention realizes the deformation detection of the wafer under specific pressure, thereby accurately measuring the elastic strain characteristic of the wafer before bonding, improving the bonding quality of the wafer and ensuring the performance of the three-dimensional memory.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a wafer elastic strain measurement device, a measurement method, and a wafer bonding method.
Background
With the development of planar flash memories, the production process of semiconductors has made tremendous progress. But in recent years, the development of planar flash memory has met with various challenges: physical limits, current development technology limits, stored electron density limits, and the like. In this context, to address the difficulties encountered with planar flash memories and the pursuit of lower unit cell production costs, various three-dimensional (3D) flash memory structures have been developed, such as 3D NOR flash and 3D NAND flash.
The 3D NAND memory uses the small volume and large capacity as starting points, uses the high integration of stacking memory cells layer by layer in a three-dimensional mode as a design concept, and produces a memory with high unit area memory density and high memory cell performance, which has become a mainstream technology for designing and producing the emerging memory.
Wafer bonding processes have attracted increasing attention because of the ability to achieve higher layer stacks for three-dimensional devices. However, since the development history of the wafer bonding process is short, the yield of the bonding process is greatly affected by the previous process, but the current monitoring system for the previous process is not perfect, so that the bonding quality of the wafer is poor, and the performance of the three-dimensional memory is seriously affected.
Therefore, how to improve the bonding quality of the wafer and ensure the stability of the performance of the three-dimensional memory is a technical problem to be solved.
Disclosure of Invention
The invention provides a wafer elastic strain measurement device, a measurement method and a wafer bonding method, which are used for solving the problem that the wafer bonding quality is poor due to the fact that the elastic strain characteristic of a wafer before bonding cannot be accurately measured in the prior art, so as to ensure the stability of the performance of a three-dimensional memory.
In order to solve the above problems, the present invention provides a wafer elastic strain measurement device, comprising:
the bearing part is provided with a wafer bearing surface and an air charging hole positioned on the wafer bearing surface;
the fixing part is arranged on the bearing part and surrounds the air charging hole, and is used for fixing and attaching the surface edge of the wafer to the wafer bearing surface, so that the wafer can be deformed and a cavity is formed between the wafer and the wafer bearing surface when the air charging hole is filled with air;
and the detection part is used for measuring the deformation of the wafer after the gas is introduced.
Preferably, the bearing part is a sucker.
Preferably, the fixing part is a plurality of adsorption holes which are annularly arranged at intervals.
Preferably, the distance between the adsorption hole and the center of the bearing part is 140 mm-150 mm.
Preferably, the method further comprises: the wafer carrier comprises a wafer carrying surface, a groove on the wafer carrying surface, an air charging hole on the bottom of the groove, and a fixing part on the outer side of the groove.
Preferably, the method further comprises:
a sensor for detecting air pressure within the cavity;
and the controller is used for adjusting the gas quantity introduced into the gas filling hole according to the gas pressure.
Preferably, the wafer is provided with at least one bonding mark; the detection unit includes:
the lens is arranged towards the wafer bearing surface and used for identifying the bonding mark and acquiring the focal length of the lens corresponding to the bonding mark;
and the processor is used for calculating the deformation of the wafer according to the focal length of the lens, which is determined by the bonding marks before and after the gas is introduced into the gas filling hole.
Preferably, the at least one bond mark comprises a plurality of bond marks; the detection section further includes:
and the lens is arranged on the bracket and can move along the bracket so as to respectively acquire a plurality of focal lengths of the lens, which are in one-to-one correspondence with the bonding marks.
Preferably, the method further comprises: and the fixing part is positioned in a containing cavity surrounded by the shell.
In order to solve the above problems, the present invention further provides a method for measuring elastic strain of a wafer, comprising the following steps:
providing a wafer;
fixing the edge of the wafer;
applying pressure to one side surface of the wafer through gas to deform the wafer;
and measuring the deformation of the wafer.
Preferably, the wafer is provided with at least one bonding mark; the specific steps for measuring the deformation of the wafer comprise:
providing a lens;
searching for the bonding mark through the lens;
detecting a first focal length of the lens corresponding to the bonding mark before the gas applies pressure to one side surface of the wafer and a second focal length of the lens corresponding to the bonding mark after the gas applies pressure to one side surface of the wafer respectively;
and calculating the deformation of the wafer according to the first focal length and the second focal length.
Preferably, the at least one bond mark comprises a plurality of bond marks; the specific step of measuring the deformation of the wafer further comprises the following steps:
wafer variables corresponding to the plurality of bonding marks one by one are measured respectively.
Preferably, the method further comprises the following steps:
and adjusting the pressure applied by the gas to one side surface of the wafer so as to measure the deformation of the wafer under different pressures.
In order to solve the above problems, the present invention further provides a wafer bonding method, including the following steps:
providing two pre-bonded wafers;
respectively detecting elastic strain characteristics of two wafers, fixing the edge of the wafer when detecting the elastic strain characteristics of the wafers, applying pressure to one side surface of the wafer through gas to deform the wafer, and measuring the deformation of the wafer;
at least adjusting the bonding front-end process of one wafer to make the deformation of two wafers equal under the same pressure;
bonding two wafers.
Preferably, the wafer is provided with at least one bonding mark; the specific steps for measuring the deformation of the wafer comprise:
providing a lens;
searching for the bonding mark through the lens;
detecting a first focal length of the lens corresponding to the bonding mark before the gas applies pressure to one side surface of the wafer and a second focal length of the lens corresponding to the bonding mark after the gas applies pressure to one side surface of the wafer respectively;
and calculating the deformation of the wafer according to the first focal length and the second focal length.
Preferably, the at least one bond mark comprises a plurality of bond marks; the specific step of measuring the deformation of the wafer further comprises the following steps:
wafer variables corresponding to the plurality of bonding marks one by one are measured respectively.
Preferably, the detecting the elastic strain characteristics of the two wafers respectively further comprises the following steps:
and adjusting the pressure applied by the gas to one side surface of the wafer so as to measure the deformation of the wafer under different pressures.
Preferably, the specific step of adjusting at least one wafer in the bonding front-end process so that the deformation amounts of two wafers are equal under the same pressure includes:
and forming an elastic film on the surface of one side of a wafer, and improving the elastic strain characteristic of the wafer so that the deformation amounts of two wafers under the same pressure are equal.
According to the wafer elastic strain measurement device, the measurement method and the wafer bonding method, the wafer edge is fixed, and the pressure is applied to the surface of one side of the wafer, so that the wafer is deformed, the deformation amount of the wafer under the specific pressure is detected, the elastic strain characteristic of the wafer before bonding can be accurately measured, the bonding quality of the wafer is improved, and the performance of the three-dimensional memory is ensured.
Drawings
FIG. 1 is a schematic diagram of a wafer elastic strain measurement device before inflation according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an inflated structure of a wafer elastic strain measurement device according to an embodiment of the present invention;
FIG. 3 is a flow chart of a method for measuring elastic strain of a wafer in accordance with an embodiment of the present invention;
fig. 4 is a flow chart of a wafer bonding method in accordance with an embodiment of the present invention.
Detailed Description
The following describes in detail the specific embodiments of the wafer elastic strain measurement device and the wafer bonding method provided by the invention with reference to the accompanying drawings.
The wafer bonding process has a great influence on the yield of the wafer bonding process due to the characteristics of the process. Specifically, two wafers undergo different front-end processes before the bonding process, and when the two wafers arrive at the station where the wafer bonding process is performed, the deformation amounts of the two wafers are often different under the same pressure. However, for the bonding machine, due to the limitation of the process conditions, the deformation of the two wafers under the same pressure cannot be accurately measured; or the average deformation amount of the two wafers is strongly adjusted to be consistent through a specific process means, but the forced adjustment mode inevitably leads to the increase of the deformation amount difference of the two wafers in a local area. Therefore, the wafer bonding quality is poor due to the inability to accurately measure the deformation amount of the wafer.
In order to solve the problem, the present embodiment provides a device for measuring elastic strain of a wafer, fig. 1 is a schematic structural diagram of the device for measuring elastic strain of a wafer before inflation in the embodiment of the present invention, and fig. 2 is a schematic structural diagram of the device for measuring elastic strain of a wafer after inflation in the embodiment of the present invention.
As shown in fig. 1 and 2, the wafer elastic strain measurement device provided in this embodiment includes: a carrying part 11, a fixing part 111 and a detecting part 17. The carrying part 11 is provided with a wafer carrying surface 12 and an air charging hole 112 positioned on the wafer carrying surface 12; the fixing portion 111 is disposed on the carrying portion 11 and surrounds the gas filling hole 112, and the fixing portion 111 is configured to fix and attach a surface edge of the wafer 13 to the wafer carrying surface 12, so that when gas is filled into the gas filling hole 112, the wafer 13 can be deformed and a cavity 20 is formed between the wafer carrying surface and the wafer carrying surface; the detecting unit 17 is configured to measure a deformation amount of the wafer 13 after the gas is introduced.
Specifically, the wafer elastic strain measurement device further includes a housing 14, and the carrying portion 11 and the fixing portion 111 are located in a receiving cavity 10 surrounded by the housing 14. The plurality of conveying structures 15 penetrate through the carrying part 11 and can perform lifting motion along a vertical direction so as to transfer the wafer 13 to the wafer carrying surface 12 of the carrying part 11 or transfer the wafer 13 from the wafer carrying surface 12 of the carrying part 11 to the outside. The carrying portion 11 is provided with a fixing portion 111 disposed around the air charging hole 112, and the fixing portion 111 is configured to fix and attach the edge of the wafer 13 to the wafer carrying surface 12, so as to prevent the position of the wafer 13 from moving during the process of introducing air into the air charging hole 112, thereby affecting the accuracy of the measurement result. In this embodiment, since only the edge of the wafer 13 is fixed to and attached to the wafer carrying surface 12, when the gas is introduced into the gas-filled hole 112, a gas pressure is applied to one side surface of the wafer 13, so that the wafer 13 is deformed, that is, the wafer 13 protrudes along the direction in which the wafer carrying surface 12 points to the wafer 13, and a cavity 20 is formed between the wafer carrying surface 12 and the side surface of the wafer 13 that receives the gas pressure. By detecting the deformation of the wafer 13 under a specific pressure, the elastic strain performance of the wafer 13 can be accurately obtained, and the wafer 13 is used as a reference for adjusting the pre-bonding process of the wafer 13, so that the bonding quality of the wafer can be effectively improved, and the stability of the performance of the three-dimensional memory is ensured.
In order to reduce the overall cost of the wafer elastic strain measurement device, the carrying portion 11 is preferably a suction cup.
Preferably, the fixing portion 111 is a plurality of adsorption holes arranged at intervals in an annular shape. Specifically, the inflation hole 112 is located at the center of the carrying portion 11; the plurality of adsorption holes are distributed at the edge of the bearing part 11 at intervals in a ring shape and are arranged around the inflation holes 112. The adsorption holes firmly adsorb the edge of the wafer 13 on the wafer bearing surface 12 by utilizing the vacuum adsorption function, so that on one hand, the damage to the surface of the wafer can be reduced, on the other hand, the leakage of the gas in the cavity 20 from the edge of the bearing part 11 can be effectively avoided, and the accuracy of the elastic strain measurement of the wafer is further improved. The specific number of the adsorption holes can be selected by those skilled in the art according to actual needs, and in general, the greater the number of the adsorption holes and the smaller the aperture, the higher the accuracy of measurement and the stronger the adsorption force to the wafer 13.
In order not to affect the elastic deformation of the wafer 13, the distance between the suction hole and the center of the carrier 11 is preferably 140mm to 150mm. More preferably, the distance between the adsorption hole and the center of the bearing part 11 is 147mm.
Preferably, the wafer elastic strain measurement device further includes: the air charging hole 112 is located at the bottom of the groove, and the fixing portion 111 is located at the outer side of the groove.
Specifically, as shown in fig. 1 and 2, a groove is formed on the wafer carrying surface 12 of the carrying portion 11, the air charging hole 112 is located at the bottom of the groove, and the fixing portion is located at the outer side of the groove, so that after the edge of the wafer 13 is fixed and attached to the wafer carrying surface 12 by the fixing portion 111, even when the air charging hole 112 is not charged, a larger gap area is formed between the middle portion of the wafer 13 and the wafer carrying surface 12, so as to apply a gas pressure to one side surface of the wafer 13.
To further reduce the contact area between the wafer 13 and the wafer carrying surface 12, the top outside the recess has a recess 113 extending along the direction of the wafer 13 toward the wafer carrying surface 12. When the fixing portion 111 is a plurality of adsorption holes arranged at intervals in a ring shape, the adsorption holes are communicated with the bottom of the recess 113.
In order to simplify the overall structure of the wafer elastic strain measurement device, preferably, the wafer elastic strain measurement device further includes:
a sensor for detecting the air pressure in the cavity 20;
and a controller for adjusting the amount of gas introduced into the gas-filling hole 112 according to the gas pressure.
Specifically, the wafer elastic strain measurement device further includes a pipe 16 embedded in the gas filling hole 112, for introducing gas into the gas filling hole 112. Wherein the gas may be nitrogen or an inert gas. The sensor can monitor the air pressure in the cavity 20 in real time, so that the relationship between the deformation amount of the wafer 13 and the pressure applied to the wafer 13 can be conveniently and accurately obtained. Meanwhile, the controller adjusts the air pressure in the cavity 20, so as to obtain the deformation of the wafer 13 under different pressures, so as to more comprehensively know the relationship between the deformation of the wafer 13 and the pressure.
In order to simplify the overall structure of the elastic strain measurement device and further improve the accuracy of measurement, it is preferable that the wafer 13 has at least one bonding mark 131 therein; the detection unit 17 includes:
a lens 171, wherein the wafer 171 is disposed towards the wafer carrying surface 12, and is used for identifying the bonding mark 131 and acquiring a focal length of the lens 171 corresponding to the bonding mark 131;
and a processor 172 for calculating the deformation amount of the wafer according to the focal length of the lens 171 determined by the bonding marks 131 before and after the gas is introduced into the gas-filled hole 112.
More preferably, the at least one bond mark 131 includes a plurality of bond marks 131; the detecting section 17 further includes a holder 18, and the lens 171 is mounted on the holder 18 and movable along the holder 18 to acquire a plurality of focal lengths of the lens 171 in one-to-one correspondence with a plurality of the bonding marks, respectively. The bonding marks 131 are preferably uniformly distributed in the wafer 13, so that the overall morphology change of the wafer 13 under a specific pressure can be measured more accurately.
Since deformation amounts of each portion of the wafer 13 may be inconsistent after the gas is introduced into the gas-filling hole 112, the setting of the bonding mark 131 is equivalent to providing a reference point for deformation test, and the deformation condition of the wafer 13 can be quickly known by detecting the focal length of the lens 171 determined by the bonding mark 131 before and after the gas filling.
Specifically, the bonding mark 131 is a copper mark provided inside the wafer 13. Before the gas is introduced into the gas-filled hole 112, the lens 171 moves along the support 18, the lens 171 finds the bonding mark 131 in the wafer 13 by emitting infrared rays and receiving the infrared rays reflected by the wafer 13, and after the bonding mark 131 is found, the distance h1 between the lens 171 and the bonding mark 131 is automatically adjusted, that is, the lens 171 automatically focuses, so that the bonding mark 131 forms the most clear image in the lens 171, and the focal length of the lens 171 at the moment is obtained. After the gas is introduced into the gas-filled hole 112, the lens 171 moves along the support 18, searches for the same bonding mark 131 in the wafer 13 again by emitting infrared rays and receiving the infrared rays reflected by the wafer 13, and after the bonding mark 131 is found, performs automatic focusing again, that is, adjusts the distance h2 between the lens 171 and the bonding mark 131 in the current state, so that the bonding mark 131 forms the clearest image in the lens 171, and obtains the focal length of the lens 171 at this time. The processor 172 obtains the deformation amount of the wafer 13 according to the focal length determined by the bonding marks 171 before and after the lens 171 is inflated. The detecting unit 17 may move not only left and right along the frame 18 but also back and forth in the horizontal plane to find the plurality of bonding marks 131 inside the wafer 13.
Furthermore, the present embodiment also provides a method for measuring elastic strain of a wafer, and fig. 3 is a flowchart of the method for measuring elastic strain of a wafer according to the embodiment of the present invention. As shown in fig. 3, the method for measuring elastic strain of a wafer according to the present embodiment includes the following steps:
step S31, a wafer is provided;
step S32, fixing the edge of the wafer;
step S33, applying pressure to one side surface of the wafer through gas to deform the wafer;
step S34, measuring the deformation amount of the wafer 13.
In this embodiment, the elastic strain test may be performed on the single crystal wafer to obtain the elastic strain characteristic, such as the bending value, of the single crystal wafer under a specific pressure; and then respectively carrying out elastic strain test on the wafers subjected to different processes so as to reflect the change condition of the elastic modulus of the wafers in the wafer bonding front-end process. Wherein, the single crystal wafer refers to a wafer which does not perform any process.
Preferably, the wafer is provided with at least one bonding mark; the specific steps for measuring the deformation of the wafer comprise:
providing a lens;
searching for the bonding mark through the lens;
detecting a first focal length of the lens corresponding to the bonding mark before the gas applies pressure to one side surface of the wafer and a second focal length of the lens corresponding to the bonding mark after the gas applies pressure to one side surface of the wafer respectively;
and calculating the deformation of the wafer according to the first focal length and the second focal length.
The specific method for calculating the deformation amount of the wafer according to the first focal length and the second focal length may be that the deformation amount of the wafer is reflected according to a difference value between the first focal length and the second focal length.
In order to obtain the elastic strain characteristic of the whole wafer, preferably, the at least one bonding mark comprises a plurality of bonding marks; the specific step of measuring the deformation of the wafer further comprises the following steps:
wafer variables corresponding to the plurality of bonding marks one by one are measured respectively.
Preferably, the method for measuring elastic strain of a wafer further comprises the following steps:
and adjusting the pressure applied by the gas to one side surface of the wafer so as to measure the deformation of the wafer under different pressures.
Furthermore, the present embodiment also provides a wafer bonding method, and fig. 4 is a flowchart of the wafer bonding method according to the embodiment of the present invention, and a specific method of the wafer elastic strain test according to the embodiment of the present invention may be referred to as fig. 3. As shown in fig. 3 and 4, the wafer bonding method provided in this embodiment includes the following steps:
step S41, providing two pre-bonded wafers;
step S42, respectively detecting elastic strain characteristics of two wafers, fixing the edge of the wafer when detecting the elastic strain characteristics of the wafers, applying pressure to one side surface of the wafer through gas to deform the wafer, and measuring the deformation of the wafer;
in step S43, at least one wafer is adjusted to have the same deformation amount under the same pressure. The front-end process refers to a process performed by the wafer before the wafer bonding process is performed.
And S44, bonding two wafers.
In this embodiment, the relationship between the pressure applied to the two wafers and the deformation amount thereof is obtained by performing an elastic strain test on the two wafers that are pre-bonded. According to the relation, the front-end process of at least one wafer is adjusted, so that in the final wafer bonding process, two wafers can generate equal deformation under the same pressure, a more accurate wafer bonding alignment process is realized, the line width is further reduced, the wafer bonding quality is improved, and the performance of the three-dimensional memory is improved.
Preferably, the wafer is provided with at least one bonding mark; the specific steps for measuring the deformation of the wafer comprise:
providing a lens;
searching for the bonding mark through the lens;
detecting a first focal length of the lens corresponding to the bonding mark before the gas applies pressure to one side surface of the wafer and a second focal length of the lens corresponding to the bonding mark after the gas applies pressure to one side surface of the wafer respectively;
and calculating the deformation amount of the wafer 13 according to the first focal length and the second focal length.
Preferably, the at least one bond mark comprises a plurality of bond marks; the specific step of measuring the deformation of the wafer further comprises the following steps:
the wafer 13 deformation amounts corresponding to the plurality of bonding marks one by one are measured, respectively.
Preferably, the detecting the elastic strain characteristics of the two wafers respectively further comprises the following steps:
and adjusting the pressure applied by the gas to one side surface of the wafer so as to measure the deformation of the wafer under different pressures.
Since the wafer is subjected to hundreds of front-end-of-line processes before the bonding process, one skilled in the art can adjust the elastic strain characteristics of the wafer before bonding by adjusting the conditions of a front-end-of-line process, adding a process or subtracting a process. In order to further ensure the performance of the final wafer product and reduce the cost of wafer bonding, it is preferable that at least one wafer is adjusted in the pre-bonding stage so that the deformation of the two wafers under the same pressure is equal, comprising the following specific steps:
and forming an elastic film on the surface of one side of a wafer, and improving the elastic strain characteristic of the wafer so that the deformation amounts of two wafers under the same pressure are equal.
According to the wafer elastic strain measurement device, the measurement method and the wafer bonding method, the wafer edge is fixed, and pressure is applied to the surface of one side of the wafer, so that the wafer is deformed, the deformation amount of the wafer under the specific pressure is detected, the elastic strain characteristic of the wafer before bonding can be accurately measured, the bonding quality of the wafer is improved, and the performance of the three-dimensional memory is ensured.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (17)
1. A wafer elastic strain measurement apparatus, comprising:
the wafer carrying part is provided with a wafer carrying surface and an air charging hole positioned on the wafer carrying surface, and a plurality of transmission structures penetrate through the carrying part;
the fixing part is arranged on the bearing part and surrounds the air charging hole, and is used for fixing and attaching the surface edge of the wafer to the wafer bearing surface, so that the wafer can be deformed and a cavity is formed between the wafer and the wafer bearing surface when the air charging hole is filled with air;
and the detection part is used for measuring the deformation of the wafer after the gas is introduced.
2. The device of claim 1, wherein the carrier is a chuck.
3. The device for measuring elastic strain of wafer according to claim 1, wherein the fixing portion is a plurality of adsorption holes arranged at intervals in a ring shape.
4. A wafer elastic strain measurement device according to claim 3, wherein the distance between the suction hole and the center of the carrier is 140mm to 150mm.
5. The device for measuring elastic strain of a wafer according to claim 1, further comprising: the wafer carrier comprises a wafer carrying surface, a groove on the wafer carrying surface, an air charging hole on the bottom of the groove, and a fixing part on the outer side of the groove.
6. The device for measuring elastic strain of a wafer according to claim 1, further comprising:
a sensor for detecting air pressure within the cavity;
and the controller is used for adjusting the gas quantity introduced into the gas filling hole according to the gas pressure.
7. The device of claim 1, wherein the wafer has at least one bond mark therein; the detection unit includes:
the lens is arranged towards the wafer bearing surface and used for identifying the bonding mark and acquiring the focal length of the lens corresponding to the bonding mark;
and the processor is used for calculating the deformation of the wafer according to the focal length of the lens, which is determined by the bonding marks before and after the gas is introduced into the gas filling hole.
8. The apparatus of claim 7, wherein the at least one bond mark comprises a plurality of bond marks; the detection section further includes:
and the lens is arranged on the bracket and can move along the bracket so as to respectively acquire a plurality of focal lengths of the lens, which are in one-to-one correspondence with the bonding marks.
9. The device for measuring elastic strain of a wafer according to claim 1, further comprising: and the fixing part is positioned in a containing cavity surrounded by the shell.
10. The method for measuring the elastic strain of the wafer is characterized by comprising the following steps of:
providing a wafer;
fixing the edge of the wafer;
applying pressure to one side surface of the wafer through gas to deform the wafer;
measuring the deformation of the wafer;
the wafer is provided with at least one bonding mark, and the step of measuring the deformation of the wafer comprises the following steps:
providing a lens;
searching for the bonding mark through the lens;
detecting a first focal length of the lens corresponding to the bonding mark before the gas applies pressure to one side surface of the wafer and a second focal length of the lens corresponding to the bonding mark after the gas applies pressure to one side surface of the wafer respectively;
and calculating the deformation of the wafer according to the first focal length and the second focal length.
11. The method of claim 10, wherein the at least one bond mark comprises a plurality of bond marks; the specific step of measuring the deformation of the wafer further comprises the following steps:
wafer variables corresponding to the plurality of bonding marks one by one are measured respectively.
12. The method of claim 10, further comprising the steps of:
and adjusting the pressure applied by the gas to one side surface of the wafer so as to measure the deformation of the wafer under different pressures.
13. A wafer bonding method, comprising the steps of:
providing two pre-bonded wafers;
respectively detecting elastic strain characteristics of two wafers, fixing the edge of the wafer when detecting the elastic strain characteristics of the wafers, applying pressure to one side surface of the wafer through gas to deform the wafer, and measuring the deformation of the wafer;
at least adjusting the bonding front-end process of one wafer to make the deformation of two wafers equal under the same pressure;
bonding two wafers.
14. The wafer bonding method according to claim 13, wherein the wafer has at least one bonding mark therein; the specific steps for measuring the deformation of the wafer comprise:
providing a lens;
searching for the bonding mark through the lens;
detecting a first focal length of the lens corresponding to the bonding mark before the gas applies pressure to one side surface of the wafer and a second focal length of the lens corresponding to the bonding mark after the gas applies pressure to one side surface of the wafer respectively;
and calculating the deformation of the wafer according to the first focal length and the second focal length.
15. The wafer bonding method of claim 14, wherein the at least one bond mark comprises a plurality of bond marks; the specific step of measuring the deformation of the wafer further comprises the following steps:
wafer variables corresponding to the plurality of bonding marks one by one are measured respectively.
16. The wafer bonding method according to claim 13, wherein detecting elastic strain characteristics of the two wafers, respectively, further comprises the steps of:
and adjusting the pressure applied by the gas to one side surface of the wafer so as to measure the deformation of the wafer under different pressures.
17. The method of claim 13, wherein the step of adjusting at least one wafer to have the same deformation under the same pressure comprises: and forming an elastic film on the surface of one side of a wafer, and improving the elastic strain characteristic of the wafer so that the deformation amounts of two wafers under the same pressure are equal.
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