CN108972319A - Chemical and mechanical grinding cushion and preparation method thereof - Google Patents
Chemical and mechanical grinding cushion and preparation method thereof Download PDFInfo
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- CN108972319A CN108972319A CN201811084488.5A CN201811084488A CN108972319A CN 108972319 A CN108972319 A CN 108972319A CN 201811084488 A CN201811084488 A CN 201811084488A CN 108972319 A CN108972319 A CN 108972319A
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- 238000000227 grinding Methods 0.000 title claims abstract description 113
- 239000000126 substance Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000009826 distribution Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 57
- 230000003647 oxidation Effects 0.000 claims description 44
- 238000007254 oxidation reaction Methods 0.000 claims description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- 238000009415 formwork Methods 0.000 claims description 24
- 239000004411 aluminium Substances 0.000 claims description 23
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 229920006254 polymer film Polymers 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 11
- 239000003431 cross linking reagent Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- -1 octadecyl trichlorosilane alkane Chemical class 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 8
- 239000003792 electrolyte Substances 0.000 claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 6
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 6
- 229920002635 polyurethane Polymers 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 5
- 150000004756 silanes Chemical class 0.000 claims description 5
- IKPSIIAXIDAQLG-UHFFFAOYSA-N 1-bromoundecane Chemical compound CCCCCCCCCCCBr IKPSIIAXIDAQLG-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 5
- 229920006264 polyurethane film Polymers 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000000053 physical method Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- MRDKYAYDMCRFIT-UHFFFAOYSA-N oxalic acid;phosphoric acid Chemical compound OP(O)(O)=O.OC(=O)C(O)=O MRDKYAYDMCRFIT-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a kind of chemical and mechanical grinding cushion and preparation method thereof, which includes: substrate and the grinding layer that is formed in the substrate, wherein the surface of the grinding layer includes the micro-protuberance structure of multiple uniform sequential distributions；Multiple grooves are formed between multiple micro-protuberance structures；Wherein, the porosity of the grinding layer surface is 30%~50%.By being template using porous anodic aluminium oxide, the chemical and mechanical grinding cushion that novel surface possesses controllable nano array structure is prepared using nano-copy technology, the grinding pad improves chemical mechanical grinding rate, the surface scratches of handled wafer are reduced, and ensure that the homogeneity after grinding between wafer.
Description
Technical field
The present invention relates to semiconductor fields, and in particular to a kind of chemical and mechanical grinding cushion and preparation method thereof.
Background technique
Chemical mechanical grinding (Chemical Mechanical Polishing, CMP) be it is a kind of in semiconductor processing,
By removing the film of deposition in conjunction with chemical reaction and mechanism, to realize the technical process of flattening wafer surface.
Chemical machinery polishing system generally includes grinding pad (CMP Pad), control wafer makes it face down to contact the spin of grinding pad
Grinding wafer head and lapping liquid (slurry) transportation and distrubution apparatus etc..Wherein grinding pad is usually by porous, flexible polymerization material
Material, such as the polyester articles such as polyurethane are made, and structure, property etc. will have a direct impact on the quality of chemical mechanical milling tech.
For example, in a cmp process, grinding pad is to the grinding effect of wafer, such as grinding rate (removal rate), homogeneity
(uniformity), (scratch) etc. is scratched to have an important influence.In order to obtain excellent grinding effect, grinding pad needs
More lapping liquids can be carried and it is made to be dispersed in grinding pad surface, while also needing that grinding by-product can be smoothly discharged,
All to the surface texture of grinding pad, more stringent requirements are proposed for these.
However, traditional grinding pad mostly uses foaming to prepare greatly, obtained grinding pad surface disorder distribution large number of orifices
Hole structure, pore size is different (mostly at 20~40 μm or more), and surface is extremely coarse and irregular.These defects, which will lead to, grinds
Grinding fluid is unevenly distributed grinding pad surface, so cause grinding after crystal column surface it is inhomogenous.In addition, coarse and irregular
Surface not only substantially reduces the contact area of wafer and grinding pad, reduces grinding rate, stress when also easily leading to the two contact
Unevenness causes the problems such as scratching.
Therefore, a kind of new chemical and mechanical grinding cushion and preparation method thereof is needed, to solve existing in the prior art kind
Kind problem.
It is noted that information disclosed in aforementioned background art part is only used for reinforcing understanding background of the invention, because
This it may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Summary of the invention
The object of the present invention is to provide a kind of chemical and mechanical grinding cushions and preparation method thereof, by utilizing anodic oxidation aluminum dipping form
The chemical and mechanical grinding cushion with controllable nano array structure is prepared using nano-copy technology in plate, traditional to solve
Mechanical grinding cushion rough surface is irregular and bore hole size is larger, and the crystal column surface for causing it to handle is uneven, and take place frequently scratch
And the problem that grinding rate is low.
To achieve the goals above, the present invention adopts the following technical scheme:
The present invention provides a kind of chemical and mechanical grinding cushion, comprising: substrate and the grinding layer being formed in the substrate, wherein
The surface of the grinding layer includes
The micro-protuberance structure of multiple uniform sequential distributions；
Multiple grooves are formed between multiple micro-protuberance structures；
Wherein, the porosity of the grinding layer surface is 30%~50%.
According to embodiment of the present invention, the spacing between the adjacent micro-protuberance structure is 0.3um~11um.
According to embodiment of the present invention, the height of the micro-protuberance structure is 100um~300um.
According to embodiment of the present invention, the diameter of the micro-protuberance structure is 0.5um~20um.
According to embodiment of the present invention, orthographic projection track of the multiple groove in the grinding layer surface is in
Waveform, and the wavy orthographic projection track meets the motion profile of simple harmonic motion.
The present invention also provides a kind of preparation methods of above-mentioned chemical and mechanical grinding cushion, comprising:
One porous anodic oxidation aluminium formwork is provided；
The anodic oxidation aluminium formwork is placed in solution of silane, self-assembled modified silane monolayer layer is in the anodic oxygen
Change the surface of aluminum alloy pattern plate；
It is described it is self-assembled modified after anodic oxidation aluminium formwork surface spin coating prepolymer and crosslinking agent formed polymer film；
Removing removes the polymer film, obtains the polymer film with multiple micro-protuberance structures；
To the polymer film surface slot treatment with the micro-protuberance structure, the grinding layer is formed；And
The grinding layer and substrate are pressed, the chemical and mechanical grinding cushion is formed.
According to embodiment of the present invention, the processing time of the self-assembled modified silane monolayer layer be 10~
30min。
According to embodiment of the present invention, the preparation method of the anodic oxidation aluminium formwork includes:
99.999% ultrapure aluminium flake is pre-processed；
The pretreated aluminium flake is placed in anode electrolytic cell, carries out anodized in electrolyte to get institute
State anodic oxidation aluminium formwork.
According to embodiment of the present invention, the pretreatment includes that annealing, oil removing, removing oxide layer and electrochemistry are thrown
Light.
According to embodiment of the present invention, the oxidation processes include:
First step oxidation: response voltage is 30~600V, and reaction temperature is 0~20 DEG C, carries out 10~30h of oxidation processes；
It removes removing oxide layer: being removed the oxide layer formed after the first step oxidation processes using acid mixed solution；
Second step oxidation: it is described remove removing oxide layer after, carry out 10~48h of second step oxidation processes, response voltage be 30~
600V, reaction temperature are 0~20 DEG C.
It according to embodiment of the present invention, further include that the aluminium flake after the second step oxidation processes is placed in 0.1-
Sour processing is carried out in the acid solution of 0.5M, obtains the anodic oxidation aluminium formwork.
According to embodiment of the present invention, the electrolyte is selected from one of phosphoric acid, oxalic acid and sulfuric acid or a variety of.
According to embodiment of the present invention, described to go in removing oxide layer, the acid mixed solution is chromic acid and phosphoric acid
Mixed liquor.
According to embodiment of the present invention, the reaction temperature for removing removing oxide layer is 40~100 DEG C, the reaction time
5-10h。
According to embodiment of the present invention, the silane is selected from octadecyl trichlorosilane alkane, 11- amino-undecanoic base
One of triethoxysilane, 11- bromoundecane base trichlorosilane and 11- amino-undecanoic ethyl triethoxy silicane alkane are more
Kind.
According to embodiment of the present invention, the prepolymer is polyurethane；The crosslinking agent is selected from solidification polyamines, consolidates
Change polyalcohol and solidifies the one or more of hydramine；The mass ratio of the prepolymer and crosslinking agent is 10:1 to 15:1.
Description according to the above technical scheme it is found that the beneficial effects of the present invention are:
The present invention is by being template using porous anodic aluminium oxide (AAO), using nano-copy technology (nano-
Replication technology) prepare the chemical mechanical grinding that novel surface possesses controllable nano array structure
Pad.It can enable the surface wafer (wafer) uniform stressed during the grinding process using the grinding pad, greatly reduce scratch and generate
Probability；Further, it is also possible to effectively make lapping liquid evenly dispersed, the homogeneity of handled crystal column surface is improved；Due to the change
Special surface possessed by grinding pad is learned, the contact area of itself and wafer is increased, and more lapping liquids can be carried, to mention
High grinding rate.The preparation method simple process of chemical and mechanical grinding cushion of the invention, it is reproducible between batch, it greatly improves
Homogeneity (wafer to wafer uniformity) between handled wafer.
Detailed description of the invention
In order to which the embodiment of the present invention can be easier to understand, appended attached drawing is cooperated to elaborate below.It should be noted that root
According to industrial classical example, all parts are not necessarily drawn to scale, and are only used for the purpose illustrated.In fact, being
Make discussion clear understandable, the size of all parts can be arbitrarily expanded or reduced.
Fig. 1 is schematic diagram of the chemical and mechanical grinding cushion of one embodiment of the present invention in chemical mechanical planarization process；
Fig. 2 is the partial enlarged view of dotted portion in Fig. 1；
Fig. 3 is the schematic diagram of the partial mill layer surface of the chemical and mechanical grinding cushion of one embodiment of the present invention；
Fig. 4-Fig. 8 shows each stage signal of preparation process of the chemical and mechanical grinding cushion of one embodiment of the present invention
Figure；
Fig. 9-Figure 11 respectively illustrates tool, and there are three types of the grinding pad top views of different groove shapes.
Wherein, the reference numerals are as follows:
1: chemical and mechanical grinding cushion
2: lapping liquid
3: wafer
101: silane monolayer layer
102: polymer film
11: grinding layer
12: substrate
13: micro-protuberance structure
D: the diameter of micro-protuberance structure
L: the spacing between adjacent micro-protuberance structure
H: the height of micro-protuberance structure
Specific embodiment
The following contents provides many different embodiments or example, to realize the different components of the embodiment of the present invention.Below
The concrete example of component and configuration mode is described, to simplify the embodiment of the present invention.Certainly, these are only example, and are not intended to
Limit the embodiment of the present invention.The embodiment of the present invention can in each example repeat reference numerals and/or letter.This repeat be in order to
Simplified and clear purpose, the relationship itself being not intended between specified discussed each embodiment and/or configuration.This
Outside, in the following description, descriptions of well-known structures and technologies are omitted, so as not to unnecessarily obscure the concept of the present invention.
Formed in embodiments of the present invention a component on another component, be connected to another component, and/or be coupled to another
Component may include the embodiment to form this component and directly contact another component, and also may include forming additional component to be situated between
Between these components, so that the embodiment that these components are not directly contacted with.Furthermore in order to be easy the description embodiment of the present invention
Relationship between one component and another component, can be used space correlation term herein, for example, " lower ", " higher ",
"horizontal", " vertical ", " in ... top ", " on ", " in ... lower section ", " ... it is beneath ", " upwards ", " downwards ", " top ", "
Bottom " etc. derived from space correlation term (such as " horizontally ", " vertically ", " upward ", " down " etc.).These spaces
Relative terms are intended to cover the different direction of the device comprising these components.
The present invention provides a kind of chemical and mechanical grinding cushion, comprising: substrate and the grinding layer being formed in the substrate, wherein
The surface of the grinding layer includes
The micro-protuberance structure of multiple uniformly discrete distributions；
Multiple grooves are formed between multiple micro-protuberance structures；
Wherein the porosity (porosity) on the grinding layer surface is 30%~50%.Fig. 1 is one implementation of the present invention
Schematic diagram of the chemical and mechanical grinding cushion of mode in chemical mechanical planarization process.Fig. 2 is the partial enlargement of dotted portion in Fig. 1
Figure.Referring to figs. 1 and 2, in chemical mechanical planarization process, lapping liquid 2 is homogeneously disposed on chemical and mechanical grinding cushion 1, is ground
The top of grinding fluid 2 is wafer 3 to be processed.11 surface of grinding layer of the chemical and mechanical grinding cushion 1 has evenly arranged micro- prominent
Structure is played, and then forms the surface with nano array structure, the specific porosity ranges of layer surface are ground by control, are guaranteed
The micro-protuberance structure increases effectively the contact area of chemical and mechanical grinding cushion 1 and wafer 3, and can carry more lapping liquids 2,
To be conducive to improve grinding rate, and scratch probability reduction；In addition, to additionally aid lapping liquid evenly dispersed for the grinding layer surface,
Improve the homogeneity of handled crystal column surface.
Specifically, the calculation of the porosity are as follows:
Wherein, n is the number of micro-protuberance structure；D is the diameter of micro-protuberance structure；L is the adjacent micro-protuberance structure
Between spacing；H is the height of micro-protuberance structure.
Fig. 3 is the schematic diagram of the partial mill layer surface of the chemical and mechanical grinding cushion of one embodiment of the present invention；Such as Fig. 1
Shown, the uniformly discrete surface for being arranged in grinding layer of micro-protuberance structure forms array structure.In some embodiments, adjacent
Micro-protuberance structure between spacing L be 0.3um~11um.The height H of micro-protuberance structure is 100um~300um.Micro-protuberance knot
The diameter D of structure is 0.5um~20um.
In some embodiments, orthographic projection track of the multiple groove in the grinding layer surface is wavy, and
The wavy orthographic projection track meets the motion profile of simple harmonic motion.
The present invention also provides the preparation methods of above-mentioned chemical and mechanical grinding cushion.Fig. 4-Fig. 9 shows one implementation of the present invention
Each stage schematic diagram of the preparation process of the chemical and mechanical grinding cushion of mode.
As shown in figure 4, providing an anodic oxidation aluminium formwork (AAO) first, which has uniformly arrangement
Multiple holes.The anodic oxidation aluminium formwork is placed in 10-30min in solution of silane, self-assembled modified silane monolayer layer
101, in the surface of the anodic oxidation aluminium formwork, obtain the anodic oxidation aluminum dipping form of surface as shown in Figure 5 after self-assembled modified
Plate.Again as shown in fig. 6, it is described it is self-assembled modified after anodic oxidation aluminium formwork surface spin coating prepolymer and crosslinking agent formed it is poly-
Compound film 102；Wherein, the prepolymer be polyurethane, the crosslinking agent include but is not limited to solidify polyamines, cured multi alcohol,
Solidify hydramine or their mixture；The mass ratio of the prepolymer and crosslinking agent is 5:1 to 15:1.Formed polymer film with
Afterwards, by physical method, by polymer film 102 from AAO sur-face peeling remove to get to it is as shown in Figure 7 have it is multiple described
The polymer film of micro-protuberance structure；To the polymer film surface slot treatment with micro-protuberance structure, multiple grooves are formed, i.e.,
The grinding layer with nano array structure is obtained；The grinding layer and substrate are finally pressed, chemistry shown in Fig. 8 is formed
Mechanical grinding cushion, including substrate 12, grinding layer 11 and multiple micro-protuberance structures 13 thereon, which has multiple
Groove.
In some embodiments, the preparation method of the anodic oxidation aluminium formwork includes:
99.999% high-purity aluminium flake is pre-processed, including annealing, oil removing, removing oxide layer and electrochemical polish；
The pretreated aluminium flake is placed in anode electrolytic cell, in the electrolyte such as phosphoric acid oxalic acid, sulfuric acid, using two steps
Oxidizing process, response voltage 30-600V, reaction temperature carry out the first step and aoxidize 10-30h at 0-20 DEG C；
Then the oxide layer formed after first time oxidation processes is removed, including uses acid mixed solution by the first step
The oxide layer removal formed after oxidation processes, wherein acid mixed solution includes but is not limited to the mixed liquor of chromic acid and phosphoric acid.For example,
Using 1.8wt% chromic acid and 6wt% phosphoric acid mixed liquor oxide layer, reaction temperature is 40-100 DEG C, reaction time 5-10h.
Removing oxide layer is removed, carries out second step oxidation, wherein response voltage 30-600V, reaction temperature is at 0-20 DEG C, reaction
Between for 10~48h to get the anodic oxidation aluminium formwork.
It in some embodiments, further include that aluminium flake is immersed in 30 DEG C of 0.1-0.5M phosphorus after second step oxidation
Sour processing is carried out in acid solution 20-60min, obtains the anodic oxidation aluminium formwork later.
In some embodiments, the silane includes but is not limited to octadecyl trichlorosilane alkane, 11- amino-undecanoic base three
Ethoxysilane, 11- bromoundecane base trichlorosilane, 11- amino-undecanoic ethyl triethoxy silicane alkane or their mixture.
Illustrate below by specific embodiment:
Embodiment 1
Taking purity is that 99.999% or more ultrapure aluminium flake is pre-processed, i.e., is annealed first, oil removing, oxide layer
And electrochemical polish, using ultrapure aluminium flake after pretreatment as anode, using carbon-point as cathode, electrolyte is phosphoric acid, voltage 300V,
Reaction temperature aoxidizes 20h at 10 DEG C for the first time, uses 1.8wt% chromic acid and 6wt% phosphoric acid mixed liquor oxide layer, temperature later
80 DEG C of degree, reaction time 4h.Second of oxidation 30h, is immersed in 80 DEG C of 0.5M phosphoric acid solution 60min later and obtains the sun
Pole alumina formwork.Obtaining aperture is 10um, hole depth 100um, the anodic oxidation aluminium formwork that porosity is 60%.
Anodic oxidation aluminium formwork obtained above is put into the toluene solution of 8wt% octadecyl trichlorosilane alkane (OTS),
It is passed through nitrogen or argon gas, temperature is controlled at 10-30 DEG C, reacts 16min, modified OTS monolayer by way of self assembly
To AAO template surface.
Polyurethane and crosslinking agent are uniformly mixed according to the ratio of 15:1, are spun on above-mentioned AAO template surface, 100 DEG C true
Sky is dry, forms one layer of polyurethane film in AAO template surface.Then, by physical method, by the polyurethane film from AAO mould
Plate surface is removed to have arrived the polyurethane film that surface has multiple micro-protuberance structures.
Multiple grooves are dug out on the polyurethane film surface, wherein positive throwing of multiple groove in the grinding layer surface
Shadow track is wavy, and the wavy orthographic projection track meets the motion profile of simple harmonic motion.As shown in figure 9, the wave
Shape groove is distributed from the center of grinding pad to edge in radiant type, is uniformly distributed between multiple grooves.It can also be further
Equipped with annular groove, the center of circle of annular groove is overlapped with the center of grinding pad, and multiple grooves are connected to annular groove, and by ring
Shape slot is distributed to the edge of polishing pad in radiant type.Using such groove, grinding pad lapping liquid with higher can be made
Bearing capacity, i.e., grinding rate with higher, while grinding defect is reduced, so that the grinding rate of grinding pad and grinding defect obtain
Improve simultaneously.
Then the polyurethane film with above-mentioned groove is pressed with substrate to get chemical and mechanical grinding cushion.
Embodiment 2
Taking purity is that 99.999% or more ultrapure aluminium flake is pre-processed, i.e., is annealed first, oil removing, oxide layer
And chemical polishing, using ultrapure aluminium flake after pretreatment as anode, using platinum filament as cathode, electrolyte is sulfuric acid, voltage 500V, instead
It answers temperature at 0 DEG C, aoxidizes 20h for the first time, use 1.8wt% chromic acid and 6wt% phosphoric acid mixed liquor oxide layer, temperature 60 later
DEG C, reaction time 8h.Second of oxidation 40h, is immersed in 30 DEG C of 0.1M phosphoric acid solution 15min later and obtains the anodic oxygen
Change aluminum alloy pattern plate.Obtaining aperture is 0.50um, hole depth 200um, the anodic oxidation aluminium formwork that porosity is 70%.
Anodic oxidation aluminium formwork obtained above is put into the toluene solution of 5wt% octadecyl trichlorosilane alkane (OTS),
It is passed through nitrogen or argon gas, temperature is controlled at 10-30 DEG C, reacts 60min, modified OTS monolayer by way of self assembly
To AAO template surface.
Polyurethane and crosslinking agent are uniformly mixed according to the ratio of 10:1, are spun on above-mentioned AAO template surface, 100 DEG C true
Sky is dry, forms one layer of polyurethane film in AAO template surface.Then, by physical method, by the polyurethane film from AAO mould
Plate surface is removed to have arrived the polyurethane film that surface has multiple micro-protuberance structures.
Multiple grooves are dug out on the polyurethane film surface, wherein positive throwing of multiple groove in the grinding layer surface
Shadow track is wavy, and the wavy orthographic projection track meets the motion profile of simple harmonic motion.Multiple groove includes more
A first grinding groove and multiple second grinding grooves, such as shown in Figure 10 or Figure 11, multiple first grinding grooves are respectively along first
Direction extends, and parallel interval is distributed multiple first grinding grooves in a second direction perpendicular to the first direction.Multiple second grind
Slot grinding extends in a second direction respectively, and parallel interval is distributed multiple second grinding grooves in a first direction.Multiple first grindings
Slot interval is uniformly distributed, and multiple second grinding grooves interval is uniformly distributed.Further, the spacing etc. of two neighboring first grinding groove
In the spacing of two neighboring second grinding groove.
Then the polyurethane film with above-mentioned groove is pressed with substrate to get chemical and mechanical grinding cushion.
Those skilled in the art should be noted that embodiment described in the invention is only exemplary, can be
Various other replacements, changes and improvements are made in the scope of the present invention.Thus, the present invention is not limited to the above embodiments, and only
It is defined by the claims.
Claims (16)
1. a kind of chemical and mechanical grinding cushion, comprising: substrate and the grinding layer being formed in the substrate, wherein the grinding layer
Surface includes
The micro-protuberance structure of multiple uniform sequential distributions；
Multiple grooves are formed between multiple micro-protuberance structures；
Wherein, the porosity of the grinding layer surface is 30%~50%.
2. chemical and mechanical grinding cushion according to claim 1, which is characterized in that between the adjacent micro-protuberance structure
Spacing is 0.3um~11um.
3. chemical and mechanical grinding cushion according to claim 1, which is characterized in that the height of the micro-protuberance structure is
100um~300um.
4. chemical and mechanical grinding cushion according to claim 1, which is characterized in that the diameter of the micro-protuberance structure is
0.5um~20um.
5. chemical and mechanical grinding cushion according to claim 1, which is characterized in that the multiple groove is in the grinding layer table
Orthographic projection track on face is wavy, and the wavy orthographic projection track meets the motion profile of simple harmonic motion.
6. a kind of preparation method of chemical and mechanical grinding cushion according to any one of claims 1 to 5, comprising:
One porous anodic oxidation aluminium formwork is provided；
The anodic oxidation aluminium formwork is placed in solution of silane, self-assembled modified silane monolayer layer is in the anodised aluminium
The surface of template；
It is described it is self-assembled modified after anodic oxidation aluminium formwork surface spin coating prepolymer and crosslinking agent formed polymer film；
Removing removes the polymer film, obtains the polymer film with multiple micro-protuberance structures；
To the polymer film surface slot treatment with the micro-protuberance structure, the grinding layer is formed；And
The grinding layer and substrate are pressed, the chemical and mechanical grinding cushion is formed.
7. preparation method according to claim 6, which is characterized in that the processing of the self-assembled modified silane monolayer layer
Time is 10~30min.
8. preparation method according to claim 6, which is characterized in that the preparation method packet of the anodic oxidation aluminium formwork
It includes:
99.999% ultrapure aluminium flake is pre-processed；
The pretreated aluminium flake is placed in anode electrolytic cell, carries out anodized in electrolyte to get the sun
Pole alumina formwork.
9. preparation method according to claim 8, which is characterized in that the pretreatment includes annealing, oil removing, removing oxide layer
And electrochemical polish.
10. preparation method according to claim 8, which is characterized in that the oxidation processes include:
First step oxidation: response voltage is 30~600V, and reaction temperature is 0~20 DEG C, carries out 10~30h of oxidation processes；
It removes removing oxide layer: being removed the oxide layer formed after the first step oxidation processes using acid mixed solution；
Second step oxidation: it is described remove removing oxide layer after, carry out 10~48h of second step oxidation processes, response voltage be 30~600V,
Reaction temperature is 0~20 DEG C.
11. preparation method according to claim 10, which is characterized in that further including will be after the second step oxidation processes
Aluminium flake, which is placed in the acid solution of 0.1-0.5M, carries out sour processing, obtains the anodic oxidation aluminium formwork.
12. preparation method according to claim 8, which is characterized in that the electrolyte is in phosphoric acid, oxalic acid and sulfuric acid
It is one or more.
13. preparation method according to claim 10, which is characterized in that described to go in removing oxide layer, the acidic mixed
Liquid is the mixed liquor of chromic acid and phosphoric acid.
14. preparation method according to claim 13, which is characterized in that the reaction temperature for removing removing oxide layer be 40~
100 DEG C, reaction time 5-10h.
15. preparation method according to claim 6, which is characterized in that the silane be selected from octadecyl trichlorosilane alkane,
11- amino-undecanoic ethyl triethoxy silicane alkane, 11- bromoundecane base trichlorosilane and 11- amino-undecanoic base triethoxy
One of silane is a variety of.
16. preparation method according to claim 6, which is characterized in that the prepolymer is polyurethane；The crosslinking agent choosing
Self-curing polyamines, cured multi are pure and mild to solidify the one or more of hydramine；The mass ratio of the prepolymer and crosslinking agent is 10:1
To 15:1.
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Application publication date: 20181211 |