CN108972230B - Optical element processing device and processing method - Google Patents

Optical element processing device and processing method Download PDF

Info

Publication number
CN108972230B
CN108972230B CN201811049182.6A CN201811049182A CN108972230B CN 108972230 B CN108972230 B CN 108972230B CN 201811049182 A CN201811049182 A CN 201811049182A CN 108972230 B CN108972230 B CN 108972230B
Authority
CN
China
Prior art keywords
vacuum chamber
processing
optical element
cluster
cluster ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811049182.6A
Other languages
Chinese (zh)
Other versions
CN108972230A (en
Inventor
许乔
李亚国
金会良
王度
袁志刚
刘志超
耿锋
欧阳升
张清华
王健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laser Fusion Research Center China Academy of Engineering Physics
Original Assignee
Laser Fusion Research Center China Academy of Engineering Physics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laser Fusion Research Center China Academy of Engineering Physics filed Critical Laser Fusion Research Center China Academy of Engineering Physics
Priority to CN201811049182.6A priority Critical patent/CN108972230B/en
Publication of CN108972230A publication Critical patent/CN108972230A/en
Application granted granted Critical
Publication of CN108972230B publication Critical patent/CN108972230B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B13/00Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)

Abstract

The embodiment of the invention provides an optical element processing device and a processing method, the device comprises a processing vacuum chamber and a plurality of cluster ion beam generating devices, wherein a moving platform for placing an optical element to be processed is arranged in the processing vacuum chamber, and each cluster ion beam generating device is arranged at the top of the processing vacuum chamber and is connected with an opening of the processing vacuum chamber. Each cluster ion beam generating device is used for processing different kinds of source gases to obtain different cluster ion beams, conveying the generated cluster ion beams to the processing vacuum chamber, and acting on the surface of the optical element to perform surface shape trimming processing on the optical element. Therefore, under the conditions of sample introduction, vacuum pumping and position coordinate determination of the optical element, integrated processing of different cluster ion beam processing modes can be realized, and the processing efficiency of the optical element is improved on the premise of ensuring high-precision surface shape finishing processing without derivative defects of the optical element.

Description

Optical element processing device and processing method
Technical Field
The invention relates to the technical field of optical processing, in particular to an optical element processing device and a processing method.
Background
Based on the characteristics and advantages of low energy and high beam current of cluster ion beams, the cluster ion beams are usually adopted to carry out high-precision surface shape finishing processing on optical elements without derivative defects at present. According to the initial surface shape precision of the optical element, cluster ion beam processing modes of different types and energies are required to realize the gradual convergence of the surface shape precision of the optical element. However, in the prior art, when the optical element is switched between different cluster ion beam processing modes, the proportion of the processing chamber vacuumizing time and the element adjusting time in the whole processing time is greatly increased, and the processing efficiency of the optical element is affected.
Disclosure of Invention
In view of the above, an object of the embodiments of the present invention is to provide an optical element processing apparatus and a processing method thereof to at least partially solve the above problems.
The embodiment of the application provides an optical element processing device, which is used for carrying out surface shape finishing processing on an optical element, and comprises a processing vacuum chamber and a plurality of cluster ion beam generating devices, wherein a moving platform for placing an optical element to be processed is arranged in the processing vacuum chamber, each cluster ion beam generating device is arranged at the top of the processing vacuum chamber, and an output port of each cluster ion beam generating device is connected to an opening arranged at the top of the processing vacuum chamber;
the input port of each cluster ion beam generation device is connected with an external source gas supply unit which provides different kinds of source gases, and the cluster ion beam generation device is used for processing the different kinds of source gases input from the input port to obtain different cluster ion beams, outputting the generated cluster ion beams from the output port to enter the processing vacuum chamber through the opening, and acting on the surface of the optical element to perform surface shape trimming processing on the optical element.
Optionally, the cluster ion beam generating device comprises an ultrasonic nozzle for converting an input source gas into a gas cluster beam, and a cluster ion source vacuum chamber, a beam filter, an ionization and acceleration device and a neutralizer which are sequentially arranged along the gas cluster beam injection direction, wherein the ultrasonic nozzle and the beam filter are arranged in the cluster ion source vacuum chamber;
the cluster ion source vacuum chamber is used for providing a vacuum environment for the ultrasonic nozzle to convert the source gas into a gas cluster beam;
the beam filter is used for converting the generated gas cluster beam into a collimated cluster beam and guiding the collimated cluster beam into the ionization and acceleration device;
the ionization and acceleration device is used for ionizing, accelerating and deflecting the introduced cluster beams and inputting the cluster ion beams obtained after treatment into the neutralizer;
the neutralizer is used for emitting low-energy electrons so that the low-energy electrons and the cluster ion beams can react to form a medium-sized cluster beam, and the medium-sized cluster beam enters the processing vacuum chamber and acts on the surface of the optical element to be processed.
Optionally, the ionization and acceleration apparatus includes an ionization vacuum chamber, and an ionizer, an accelerating electrode, and a magnetic field analyzer disposed in the ionization vacuum chamber, wherein the ionizer, the accelerating electrode, and the magnetic field analyzer are disposed in sequence along the traveling direction of the cluster beam;
the ion generator is used for emitting an electron beam so as to enable the cluster beam to be ionized under the bombardment action of the electron beam;
the acceleration electrode is used for accelerating the ionized cluster beam;
the magnetic field analyzer is used for generating a magnetic field, so that the accelerated cluster beam is deflected under the action of the magnetic field to remove the monatomic ion beam and the small clusters in the cluster beam so as to form a cluster ion beam with single mass, and the formed cluster ion beam is conveyed to the neutralizer.
Optionally, the optical element processing apparatus further includes a flow meter, an input end of the flow meter is connected to the external source gas supply unit, and an output end of the flow meter is connected to the ultrasonic nozzle, and the flow meter is configured to control flow of the received source gas.
Optionally, the optical element processing apparatus further comprises a molecular pump connected to the processing vacuum chamber by a flange for vacuum pumping the processing vacuum chamber.
Optionally, the optical element processing device further includes an assembling and adjusting system, and the assembling and adjusting system is connected to the processing vacuum chamber, and is configured to clamp and adjust the optical element to be processed, and send the adjusted optical element to be processed to a moving table in the processing vacuum chamber.
Optionally, the installation and adjustment system includes a sample introduction vacuum chamber and a clamping device arranged in the sample introduction vacuum chamber, the sample introduction vacuum chamber is communicated with the processing vacuum chamber, the clamping device is used for clamping and adjusting the optical element to be processed and sending the optical element to be processed into the processing vacuum chamber.
Optionally, the optical element processing device further comprises a baffle plate, wherein the baffle plate is arranged between the sample introduction vacuum chamber and the processing vacuum chamber and used for isolating or conducting the sample introduction vacuum chamber and the processing vacuum chamber.
Optionally, the source gas includes any one or more of an Ar monatomic particle beam source, an Ar cluster particle beam source, and a C60 cluster particle beam source.
The embodiment of the present application further provides an optical element processing method applied to the optical element processing apparatus, where the method includes:
connecting each cluster ion beam generating device with an external source gas supply unit that supplies different kinds of source gases;
starting a corresponding cluster ion beam generating device according to the required cluster ion beam, converting the input source gas into the corresponding cluster ion beam by the started cluster ion beam generating device, and guiding the generated cluster ion beam into the processing vacuum chamber;
and the cluster ion beams entering the processing vacuum chamber act on the surface of the optical element to be processed on the moving platform so as to carry out surface shape finishing processing on the optical element to be processed.
According to the optical element processing device and the processing method provided by the embodiment of the application, the plurality of cluster ion beam generating devices are arranged and are respectively connected to the opening of the processing vacuum chamber, and the input ends of the plurality of cluster ion beam generating devices can be connected with the external source gas supply unit for providing different source gases, so that different types of source gases can be converted into different cluster ion beams to act on the optical element to be processed in the processing vacuum chamber. Therefore, under the conditions of sample introduction, vacuum pumping and position coordinate determination of the optical element, integrated processing of different cluster ion beam processing modes can be realized, and the processing efficiency of the optical element is improved on the premise of ensuring high-precision surface shape finishing processing without derivative defects of the optical element.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly described below. It is appreciated that the following drawings depict only some embodiments of the invention and are therefore not to be considered limiting of its scope, for those skilled in the art will be able to derive additional related drawings therefrom without the benefit of the inventive faculty.
Fig. 1 is a structural diagram of an optical element processing apparatus according to an embodiment of the present invention.
Fig. 2 is a structural diagram of a cluster ion beam generating apparatus according to an embodiment of the present invention.
Fig. 3 is another structural diagram of an optical element processing apparatus according to an embodiment of the present invention.
Fig. 4 is a flowchart of a method for processing an optical element according to an embodiment of the present invention.
Icon: 10-an optical element processing device; 100-a processing vacuum chamber; 110-a motion stage; 200-cluster ion beam generating means; 210-an ultrasonic nozzle; 220-cluster ion source vacuum chamber; 230-a beam filter; 240-ionization and acceleration means; 241-an ionization vacuum chamber; 242-an ionizer; 243-accelerating electrodes; 244-a magnetic field analyzer; 250-a neutralizer; 300-molecular pump; 400-debugging the system; 410-a sample introduction vacuum chamber; 420-a clamping device; 430-baffle.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
Referring to fig. 1, an optical element processing apparatus 10 for performing a surface shape modification process on an optical element is provided in the present embodiment. The optical element processing apparatus 10 includes a processing vacuum chamber 100 and a plurality of cluster ion beam generating apparatuses 200, wherein a moving stage 110 for placing an optical element to be processed is provided in the processing vacuum chamber 100, each cluster ion beam generating apparatus 200 is provided at the top of the processing vacuum chamber 100, and an output port of each cluster ion beam generating apparatus 200 is connected to an opening provided at the top of the processing vacuum chamber 100.
In this embodiment, the input port of each cluster ion beam generating apparatus 200 is connected to an external source gas supply unit that supplies different kinds of source gases, and is configured to process the different kinds of source gases input from the input port to obtain different cluster ion beams. And outputs the generated cluster ion beam from the output port to enter the processing vacuum chamber 100 through the opening and act on the surface of the optical element to perform profile shaping processing on the optical element.
In this embodiment, the optical element processing apparatus 10 further comprises a molecular pump 300, the molecular pump 300 being connected to the processing vacuum chamber 100 by a flange for vacuum pumping the processing vacuum chamber 100.
In this embodiment, the source gas may include any one or more of an Ar monatomic particle beam source, an Ar cluster particle beam source, and a C60 cluster particle beam source. It should be understood that the kind of the source gas is not limited thereto, and different source gases may be provided according to actual requirements and converted into corresponding cluster ion beams by the cluster ion beam generating apparatus 200.
Through the arrangement, under the conditions of one-time sample introduction, vacuum pumping and position coordinate determination of the optical element, different cluster ion beams can be generated through different cluster ion beam generation devices 200 and act on the surface of the optical element, integrated processing of different cluster ion beam processing modes is realized, and the processing efficiency of the optical element is improved on the premise of ensuring high-precision surface shape finishing processing without derivative defects of the optical element.
Referring to fig. 2, for each cluster ion beam generator 200 of the plurality of cluster ion beam generators 200, the cluster ion beam generator 200 includes an ultrasonic nozzle 210 for converting an input source gas into a gas cluster beam, and a cluster ion source vacuum chamber 220, a beam filter 230, an ionization and acceleration device 240, and a neutralizer 250 sequentially disposed along a spraying direction of the gas cluster beam, wherein the ultrasonic nozzle 210 and the beam filter 230 are disposed in the cluster ion source vacuum chamber 220.
In this embodiment, the optical element processing apparatus 10 further includes a flow meter, an input end of which is connected to an external source gas supply unit, and an output end of which is connected to the ultrasonic nozzle 210, for controlling the flow rate of the received source gas. The ultrasonic nozzle 210 converts the input source gas into a gas cluster beam. Wherein the cluster ion source vacuum chamber 220 provides a vacuum environment for the ultrasonic nozzle 210 to convert the source gas into a gas cluster beam.
Alternatively, in this embodiment, the gas molecules of the source gas enter the ultrasonic nozzle 210, a high-pressure low-temperature condition is formed in the ultrasonic nozzle 210 by the change of the fluid state, and a gas cluster beam is formed after being output through the output end of the ultrasonic nozzle 210. Wherein the size of the generated gas cluster beam is determined by the particle size distribution based on the gas pressure at the outlet of the ultrasonic nozzle 210, the gas temperature, and the size and shape of the ultrasonic nozzle 210.
Alternatively, the nozzle shape of the ultrasonic nozzle 210 may be designed in various forms, for example, a sonic nozzle, a conical nozzle, or a laval nozzle, etc., which is not limited in this embodiment and may be set according to the requirement. The acoustic wave nozzle can be used for generating small clusters with less than 10 atoms, the conical nozzle and the Laval nozzle belong to divergent ultrasonic touch nozzles, the central aperture of the Laval nozzle is generally not more than 0.1m, and the Laval nozzle is generally made of quartz glass through blow molding.
The beam filter 230 is used to convert the generated gas cluster beam into a collimated cluster beam and to introduce it into the ionization and acceleration device 240. It will be appreciated that in the gas stream formed by ultrasonic adiabatic expansion, only a small proportion of the gas actually forms clusters and has a greater divergence, and therefore, in this embodiment, the beam filter 230 is arranged to block the diverging, edge non-cluster gas and only allow the straight-travelling gas clusters to pass.
The cluster beam collimated by the beam filter 230 is introduced into the ionization and acceleration device 240, and the ionization and acceleration device 240 is configured to perform ionization, acceleration, and deflection processing on the introduced cluster beam, and input the processed cluster ion beam into the neutralizer 250.
Wherein the ionization and acceleration apparatus 240 includes an ionization vacuum chamber 241, and an ionizer 242, an accelerating electrode 243, and a magnetic field analyzer 244 disposed within the ionization vacuum chamber 241, wherein the ionizer 242, the accelerating electrode 243, and the magnetic field analyzer 244 are disposed in sequence along the traveling direction of the cluster beam.
The ionizer 242 is configured to emit an electron beam to ionize the cluster beam under the bombardment action of the electron beam, and the ionized cluster beam forms a charged cluster beam. The accelerating electrode 243 is used for accelerating the ionized cluster beam.
The magnetic field analyzer 244 is configured to generate a magnetic field, so that the accelerated cluster beam is deflected by the magnetic field to remove the monatomic ion beam and the small cluster in the cluster beam, so as to form a cluster ion beam with a single mass, and the formed cluster ion beam is transported to the neutralizer 250. It should be appreciated that because of the large mass of cluster ions, mass selection requires a large magnetic field, and therefore, magnetic field deflection is typically used to remove a large number of monatomic ion beams and smaller clusters, while allowing large clusters to travel straight and into the neutralization zone.
The neutralizer 250 is also disposed in the ionization vacuum chamber 241, and the neutralizer 250 is configured to emit low-energy electrons, so that the low-energy electrons and the cluster ion beam interact to form a medium-sized cluster beam, where the medium-sized cluster beam enters the processing vacuum chamber 100 and acts on the surface of the optical element to be processed. By the above process, the dispersion due to space charge can be suppressed to the maximum extent, and the charge accumulation on the surface of the optical element can be reduced.
Optionally, in this embodiment, the optical element processing apparatus 10 further includes a servo motor and a ball screw, and the ball screw is connected to the moving stage 110. The servo motor can drive the ball screw to rotate so as to control the motion table 110 to move. Therefore, the optical element to be processed placed on the moving table 110 can be moved, so that the cluster ion beam uniformly acts on the surface of the optical element to be processed, and the bombardment effect is better.
Referring to fig. 3, optionally, in the present embodiment, the optical element processing apparatus 10 further includes an assembling system 400, where the assembling system 400 is connected to the processing vacuum chamber 100, and is configured to perform clamping adjustment on the optical element to be processed and send the adjusted optical element to be processed to the moving stage 110 in the processing vacuum chamber 100.
Wherein, the installation and adjustment system 400 comprises an injection vacuum chamber 410 and a clamping device 420 arranged in the injection vacuum chamber 410, the injection vacuum chamber 410 is communicated with the processing vacuum chamber 100, and the clamping device 420 can be used for clamping and adjusting the optical element to be processed. The clamping device 420 can feed the adjusted optical element to be processed into the processing vacuum chamber 100 to place the optical element to be processed on the motion stage 110 within the processing vacuum chamber 100.
In this embodiment, in order that the sample introduction operation and the ion bombardment operation do not affect each other, in this embodiment, the optical element processing device 10 further includes a baffle 430, and the baffle 430 is disposed between the sample introduction vacuum chamber 410 and the processing vacuum chamber 100 and can be used to isolate or conduct the sample introduction vacuum chamber 410 and the processing vacuum chamber 100. In this way, the position, direction, etc. of the optical element to be processed can be adjusted by the clamping device 420 in the sampling vacuum chamber 410, and after the adjustment, the baffle 430 is opened, and the clamping device 420 sends the adjusted optical element to be processed into the processing vacuum chamber 100. After the optical element to be machined is sent into the machining vacuum chamber 100, the baffle 430 is closed, and the optical element to be machined is subjected to surface shape finishing machining in the machining vacuum chamber 100.
In addition, while the optical elements in the processing vacuum chamber 100 are subjected to surface shape finishing, the clamping device 420 can be used for adjusting the position of the optical elements to be processed subsequently, and after the optical elements in the processing vacuum chamber 100 are processed, the adjusted optical elements are sent to the processing vacuum chamber 100, so that sample introduction adjustment and processing can be performed simultaneously, time can be saved, and efficiency can be improved.
In this embodiment, a sample processing chamber and a processing vacuum chamber 100 are provided, and the vacuum degree of the processing chamber can be ensured by the two-stage vacuum chamber, and the sample adjustment and processing time can be saved.
Referring to fig. 4, the present embodiment further provides an optical element processing method applied to the optical element processing apparatus 10, wherein the optical element processing apparatus 10 includes a processing vacuum chamber 100 and a plurality of cluster ion beam generating apparatuses 200. A moving table 110 for placing optical elements to be processed is arranged in the processing vacuum chamber 100, each cluster ion beam generating device 200 is arranged at the top of the processing vacuum chamber 100, and an output port of each cluster ion beam generating device 200 is connected to an opening arranged at the top of the processing vacuum chamber 100. The optical element processing method comprises the following steps:
in step S101, each cluster ion beam generating apparatus 200 is connected to an external source gas supply unit that supplies different types of source gases.
Step S102, turning on the corresponding cluster ion beam generating device 200 according to the required cluster ion beam, and the turned-on cluster ion beam generating device 200 converts the input source gas into the corresponding cluster ion beam and guides the generated cluster ion beam into the processing vacuum chamber 100.
In step S103, the cluster ion beam entering the processing vacuum chamber 100 acts on the surface of the optical element to be processed on the moving stage 110 to perform surface shape modification processing on the optical element to be processed.
In the present embodiment, each cluster ion beam generating apparatus 200 is connected to an external source gas supply unit that supplies different types of source gases, so that the cluster ion beam generating apparatus 200 can convert the received different types of source gases into corresponding cluster ion beams. When the surface shape accuracy of the optical element to be processed is different, the required cluster ion beam type, the number of atoms, the acceleration voltage, and the like are different. In this embodiment, the corresponding cluster ion beam generating device 200 may be turned on according to the required cluster ion beam, and the turned-on cluster ion beam generating device 200 converts the input source gas into the corresponding cluster ion beam and guides the generated cluster ion beam into the processing vacuum chamber 100.
The cluster ion beam entering the processing vacuum chamber 100 acts on the surface of the optical element to be processed on the moving stage 110 to perform a profile shaping process on the optical element to be processed.
Therefore, the integration of cluster ion beams of different processing modes can be realized, after the optical element is subjected to primary sample introduction, vacuum pumping and position coordinate determination, the corresponding cluster ion beam generating device 200 is controlled according to the required processing mode to process, and the processing efficiency of the optical element is improved on the premise of ensuring that the optical element is subjected to high-precision surface shape finishing without derivative defects.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working process of the method described above may refer to the corresponding process in the foregoing apparatus, and will not be described in too much detail herein.
In summary, the optical element processing apparatus 10 and the processing method according to the embodiment of the present application are provided with the plurality of cluster ion beam generation apparatuses 200 respectively connected to the openings of the processing vacuum chamber 100, and the input ends of the plurality of cluster ion beam generation apparatuses 200 can be connected to external source gas supply units for supplying different source gases, so as to convert the different source gases into different cluster ion beams to act on the optical element to be processed in the processing vacuum chamber 100. Therefore, under the conditions of sample introduction, vacuum pumping and position coordinate determination of the optical element, integrated processing of different cluster ion beam processing modes can be realized, and the processing efficiency of the optical element is improved on the premise of ensuring high-precision surface shape finishing processing without derivative defects of the optical element.
Further, the optical element processing apparatus 10 provided in the embodiment of the present application further includes an adjustment system 400 connected to the processing vacuum chamber 100, and configured to adjust the optical element to be processed and send the adjusted optical element into the processing vacuum chamber 100. In this way, the processing of the surface shape finishing in the vacuum chamber 100 and the sample injection adjustment in the adjustment system 400 can be performed simultaneously, which saves time and improves processing efficiency.
In the description of the present invention, the terms "disposed", "connected" and "connected" should be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the embodiments provided in the embodiments of the present invention, it should be understood that the disclosed apparatus and method may be implemented in other ways. The apparatus and method embodiments described above are illustrative only, as the flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to a predetermined number of embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code. The module, segment, or portion of code, comprises one or a predetermined number of elements designed to implement a specified logical function.
It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (8)

1. An optical element processing device is used for carrying out surface shape finishing processing on an optical element and is characterized by comprising a processing vacuum chamber and a plurality of cluster ion beam generating devices, wherein a moving platform for placing the optical element to be processed is arranged in the processing vacuum chamber, each cluster ion beam generating device is arranged at the top of the processing vacuum chamber, and an output port of each cluster ion beam generating device is connected to an opening formed at the top of the processing vacuum chamber;
the input port of each cluster ion beam generating device is connected with an external source gas supply unit which provides different kinds of source gases, and the cluster ion beam generating device is used for processing the different kinds of source gases input from the input port to obtain different cluster ion beams, outputting the generated cluster ion beams from the output port to enter the processing vacuum chamber through the opening, and acting on the surface of the optical element to perform surface shape trimming processing on the optical element;
the optical element processing device also comprises an assembling and adjusting system, wherein the assembling and adjusting system is connected with the processing vacuum chamber and is used for clamping and adjusting the optical element to be processed and sending the adjusted optical element to be processed to a moving table in the processing vacuum chamber;
the installation and adjustment system comprises an injection vacuum chamber, the optical element processing device further comprises a baffle, and the baffle is arranged between the injection vacuum chamber and the processing vacuum chamber and used for isolating or conducting the injection vacuum chamber and the processing vacuum chamber.
2. The optical element processing apparatus as claimed in claim 1, wherein said cluster ion beam generating means comprises an ultrasonic nozzle for converting an input source gas into a gas cluster beam, and a cluster ion source vacuum chamber, a beam filter, an ionization and acceleration means, and a neutralizer which are disposed in this order along a direction of ejection of said gas cluster beam, wherein said ultrasonic nozzle and said beam filter are disposed within said cluster ion source vacuum chamber;
the cluster ion source vacuum chamber is used for providing a vacuum environment for the ultrasonic nozzle to convert the source gas into a gas cluster beam;
the beam filter is used for converting the generated gas cluster beam into a collimated cluster beam and guiding the collimated cluster beam into the ionization and acceleration device;
the ionization and acceleration device is used for ionizing, accelerating and deflecting the introduced cluster beams and inputting the cluster ion beams obtained after treatment into the neutralizer;
the neutralizer is used for emitting low-energy electrons so that the low-energy electrons and the cluster ion beams can react to form a medium-sized cluster beam, and the medium-sized cluster beam enters the processing vacuum chamber and acts on the surface of the optical element to be processed.
3. The optical element processing apparatus as claimed in claim 2, wherein said ionization and acceleration means comprises an ionization vacuum chamber, and an ionizer, an accelerating electrode, and a magnetic field analyzer disposed in said ionization vacuum chamber, wherein said ionizer, accelerating electrode, and magnetic field analyzer are disposed in this order along the traveling direction of said cluster beam;
the ion generator is used for emitting an electron beam so as to enable the cluster beam to be ionized under the bombardment action of the electron beam;
the acceleration electrode is used for accelerating the ionized cluster beam;
the magnetic field analyzer is used for generating a magnetic field, so that the accelerated cluster beam is deflected under the action of the magnetic field to remove the monatomic ion beam and the small clusters in the cluster beam so as to form a cluster ion beam with single mass, and the formed cluster ion beam is conveyed to the neutralizer.
4. The optical element processing apparatus as claimed in claim 2, further comprising a flow meter having an input end connected to an external source gas supply unit and an output end connected to the ultrasonic nozzle for flow control of the received source gas.
5. An optical component processing apparatus as claimed in claim 1, further comprising a molecular pump connected to the processing vacuum chamber by a flange for vacuum pumping the processing vacuum chamber.
6. The optical element processing device according to claim 1, wherein the assembling system comprises an injection vacuum chamber and a clamping device disposed in the injection vacuum chamber, the injection vacuum chamber is communicated with the processing vacuum chamber, and the clamping device is used for clamping and adjusting the optical element to be processed and sending the optical element to be processed into the processing vacuum chamber.
7. The optical device processing apparatus of claim 1, wherein the source gas comprises any one or more of an Ar monatomic particle beam source, an Ar cluster particle beam source, and a C60 cluster particle beam source.
8. An optical element processing method applied to the optical element processing apparatus according to any one of claims 1 to 7, characterized in that the method comprises:
connecting each cluster ion beam generating device with an external source gas supply unit that supplies different kinds of source gases;
clamping and adjusting an optical element to be processed by utilizing a debugging system, and conveying the adjusted optical element to be processed to a motion table in a processing vacuum chamber, wherein the debugging system comprises an injection vacuum chamber, the optical element processing device further comprises a baffle plate, and the baffle plate is arranged between the injection vacuum chamber and the processing vacuum chamber and is used for isolating or communicating the injection vacuum chamber and the processing vacuum chamber;
starting a corresponding cluster ion beam generating device according to the required cluster ion beam, converting the input source gas into the corresponding cluster ion beam by the started cluster ion beam generating device, and guiding the generated cluster ion beam into the processing vacuum chamber;
and the cluster ion beams entering the processing vacuum chamber act on the surface of the optical element to be processed on the moving platform so as to carry out surface shape finishing processing on the optical element to be processed.
CN201811049182.6A 2018-09-07 2018-09-07 Optical element processing device and processing method Active CN108972230B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811049182.6A CN108972230B (en) 2018-09-07 2018-09-07 Optical element processing device and processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811049182.6A CN108972230B (en) 2018-09-07 2018-09-07 Optical element processing device and processing method

Publications (2)

Publication Number Publication Date
CN108972230A CN108972230A (en) 2018-12-11
CN108972230B true CN108972230B (en) 2020-11-27

Family

ID=64544693

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811049182.6A Active CN108972230B (en) 2018-09-07 2018-09-07 Optical element processing device and processing method

Country Status (1)

Country Link
CN (1) CN108972230B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08120470A (en) * 1994-10-26 1996-05-14 Res Dev Corp Of Japan Ultraprecision grinding by gas cluster ion beam
JP2007111824A (en) * 2005-10-20 2007-05-10 Olympus Corp Method and device for machining workpiece
CN102263012A (en) * 2010-05-26 2011-11-30 兵库县 Surface treating method and surface treating device
CN103180030A (en) * 2010-08-23 2013-06-26 艾克索乔纳斯公司 Method and apparatus for neutral beam processing based on gas cluster ion beam technology
CN106687252A (en) * 2014-08-06 2017-05-17 德国索菲纳有限公司 Finishing device for finish machining of a workpiece, in particular of a crankshaft or a camshaft
CN107393794A (en) * 2017-08-07 2017-11-24 武汉飞安磁光电科技有限公司 A kind of gas-cluster ion sources production method and device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10670960B2 (en) * 2010-08-23 2020-06-02 Exogenesis Corporation Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08120470A (en) * 1994-10-26 1996-05-14 Res Dev Corp Of Japan Ultraprecision grinding by gas cluster ion beam
JP2007111824A (en) * 2005-10-20 2007-05-10 Olympus Corp Method and device for machining workpiece
CN102263012A (en) * 2010-05-26 2011-11-30 兵库县 Surface treating method and surface treating device
CN103180030A (en) * 2010-08-23 2013-06-26 艾克索乔纳斯公司 Method and apparatus for neutral beam processing based on gas cluster ion beam technology
CN106687252A (en) * 2014-08-06 2017-05-17 德国索菲纳有限公司 Finishing device for finish machining of a workpiece, in particular of a crankshaft or a camshaft
CN107393794A (en) * 2017-08-07 2017-11-24 武汉飞安磁光电科技有限公司 A kind of gas-cluster ion sources production method and device

Also Published As

Publication number Publication date
CN108972230A (en) 2018-12-11

Similar Documents

Publication Publication Date Title
EP2112681B1 (en) Mass spectrometer system
JP2024028745A (en) Compact high-energy ion implantation system
JP6275575B2 (en) Ion implantation apparatus and control method of ion implantation apparatus
EP2405463A1 (en) Laser-ablation ion source with ion funnel
JP2003521812A (en) Gas cluster ion beam smoother
JP5713576B2 (en) Pre-aligned nozzle / skimmer
JP6625707B2 (en) GCIB nozzle assembly
CN108140536B (en) Liquid sample introduction system for ion source and analysis system
CN110637352A (en) Ion transport from an electron ionization source
US9761410B2 (en) Apparatus and method for in-situ cleaning in ion beam apparatus
CN108972230B (en) Optical element processing device and processing method
JPWO2017022125A1 (en) Mass spectrometer
US20200144017A1 (en) Apparatus and method for controlling ion beam properties using electrostatic filter
CN113016051A (en) Electrostatic filter and ion implanter with asymmetric electrostatic configuration
CN108890449A (en) Optical component surface shape modification method and device
JP2014116294A (en) Ion mass selector, ion irradiator, surface analysis device and ion mass selection method
CN110798959A (en) Multi-direction charged particle beam steering device
JP7350970B2 (en) High current ion implanter and ion beam control method using high current ion implanter
TW202305862A (en) Ion implantation system
KR102447930B1 (en) Apparatus, system and method for ion implantation
US20200161076A1 (en) Electostatic filter and method for controlling ion beam properties using electrostatic filter
CN116075033B (en) Method for generating oxygen atom beam pulse and application thereof
CN113990734A (en) Transverse time-of-flight cluster mass selector and method of use
Tiebel et al. Assessment of an ion-funnel-to-VAC system
CN113454748A (en) Ion generation device, method, and program

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant