CN108966103A - MEMS microphone package method, structure and electronic product - Google Patents

MEMS microphone package method, structure and electronic product Download PDF

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Publication number
CN108966103A
CN108966103A CN201810994170.4A CN201810994170A CN108966103A CN 108966103 A CN108966103 A CN 108966103A CN 201810994170 A CN201810994170 A CN 201810994170A CN 108966103 A CN108966103 A CN 108966103A
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sensor
mems
blind hole
circuit substrate
microphone
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汤小贾
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Individual
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Micromachines (AREA)
  • Details Of Audible-Bandwidth Transducers (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Abstract

The present invention relates to a kind of MEMS microphone package method, structure and electronic products.The MEMS microphone package method includes the following steps: to provide one piece of microphone circuit substrate, and opens up metal blind hole on the microphone circuit substrate;MEMS sensor and ASIC amplifier are installed on the microphone circuit substrate, and is electrically connected between the MEMS sensor and the ASIC amplifier, between the ASIC amplifier and the microphone circuit substrate;Wherein, at the metal blind hole that the MEMS sensor is set on the microphone circuit substrate and the metal blind hole is covered;Metal shell is installed on the microphone circuit substrate, and covers the MEMS sensor, ASIC amplifier.Technical solution provided by the invention can not only promote sensitivity and the signal-to-noise ratio of MEMS microphone, go back controllable costs.

Description

MEMS microphone package method, structure and electronic product
Technical field
The present invention relates to acoustic-electric technical field of electronic equipment, more particularly to MEMS microphone package method, structure and electricity Sub- product.
Background technique
The appearance of MEMS (MEMS, Micro-Electro-Mechanical System) technology and application allow wheat Gram wind becomes smaller and smaller, and performance is higher and higher.MEMS microphone has many advantages, such as, for example, high s/n ratio, low-power consumption is high Sensitivity, the compatible attachment process of microencapsulated used, Reflow Soldering has no effect to the performance of MEMS microphone, and temperature is special Property is very outstanding.So that the application of MEMS microphone is also more and more extensive, especially in the application of middle and high end mobile phone.
Moreover, micro electronmechanical (MEMS) the sensor packing forms of mainstream, either analog signal output or digital signal Output is all using LGA (Land Grid Array, grid matrix) packing forms, both by a MEMS sensor chip and one A ASIC (Application Specific Integrated Circuit, i.e. specific integrated circuit) amplifier chip is fixed After in the circuit board, then it is provide with a shell in the circuit board, forms one and be suitable for SMT (Surface Mount Technology, i.e. surface mounting technology) patch production sensor component.In the conventional technology, MEMS microphone package makes MEMS sensor and ASIC amplifier chip, the characterisitic parameter of chip are fixed and invariable, to improve the spirit of product Sensitivity and signal-to-noise ratio are merely able to promote the parameter index value of the two chip items characteristics, need to put into big fund and develop again, Cost high yield is low.
Summary of the invention
Based on this, the present invention provides a kind of MEMS microphone package method, structure and electronic product, can not only promote MEMS The sensitivity of microphone and signal-to-noise ratio, go back controllable costs.
Its technical solution is as follows:
A kind of MEMS microphone package method, includes the following steps:
One piece of microphone circuit substrate is provided, and opens up metal blind hole on the microphone circuit substrate;
MEMS sensor and ASIC amplifier are installed on the microphone circuit substrate, and the MEMS sensor and institute It states between ASIC amplifier, be electrically connected between the ASIC amplifier and the microphone circuit substrate;Wherein, the MEMS At the metal blind hole that sensor is set on the microphone circuit substrate and cover the metal blind hole;
Metal shell is installed on the microphone circuit substrate, and covers the MEMS sensor, ASIC amplifier.
Its further technical scheme is as follows:
It is as follows the step of opening up metal blind hole on microphone circuit substrate in one of the embodiments:
Blind hole cavity, the inner wall surface of blind hole cavity described in metalized are made on the microphone circuit substrate.
It further include walking as follows in one of the embodiments, when making metal blind hole on the microphone circuit substrate It is rapid:
Make that the metal diameter of blind hole is φ 0.10mm~φ 3.00mm, depth is 0.10mm~3.0mm.
MEMS sensor is installed in one of the embodiments, in the metal blind hole on the microphone circuit substrate Further include following steps when place:
Make to fasten with glue the MEMS sensor on the microphone circuit substrate, and makes the MEMS sensor Sensor back cavity is connected to the metal blind hole face.
In addition, the present invention also proposes a kind of MEMS microphone package structure, including microphone circuit substrate, it is set to the wheat MEMS sensor and ASIC amplifier on gram wind-powered electricity generation base board, and on the microphone circuit substrate and cover institute State the metal shell of MEMS sensor and ASIC amplifier;
The microphone circuit substrate includes base main body, and the metal blind hole being opened in the base main body, institute The opening of metal blind hole is stated towards the metal shell;And the MEMS sensor is installed in the base main body, it is described The bottom cover of MEMS sensor is set to the opening of the metal blind hole.
The MEMS sensor includes installing in the sensor master in the base main body in one of the embodiments, Body, and the sensor back cavity set on the sensor main body bottom, the sensor back cavity are connected to the metal blind hole.
The metal shell includes the housing main body covered in the base main body in one of the embodiments, with And it is opened in the sound hole on the housing main body;
The MEMS sensor further includes the sensor being formed at the top of the sensor main body between the sound hole Ante-chamber, the sensor ante-chamber are corresponding with the sound hole.
The MEMS sensor further includes the sensor vibration at the top of sensor main body in one of the embodiments, Film, the sensor back cavity and the sensor ante-chamber are isolated by the sensor vibrating diaphragm, the sensor vibrating diaphragm with The sound hole is corresponding.
The metal diameter of blind hole is set as in one of the embodiments,The gold The depth for belonging to blind hole is set as 0.10mm~3.0mm.
In addition, the present invention also proposes a kind of electronic product, including external circuit, and be electrically connected with the external circuit MEMS microphone package structure as described above.
In technical solution proposed by the present invention, by the way that metal blind hole is arranged on microphone circuit substrate, to increase MEMS The rear chamber volume of sensor, can be real under the premise of not changing the MEMS sensor having and ASIC amplifier chip parameter The raising of existing product sensitivity and signal-to-noise ratio index value, it can the performance of product is improved under conditions of controlling product cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the overlooking structure diagram of MEMS microphone package structure described in the embodiment of the present invention;
Fig. 2 is the side structure schematic view of MEMS microphone package structure described in the embodiment of the present invention;
Fig. 3 is the backsight structural representation of MEMS microphone package structure described in the embodiment of the present invention;
Fig. 4 is the decomposition texture schematic diagram of MEMS microphone package structure described in the embodiment of the present invention;
Fig. 5 is the step schematic diagram of MEMS microphone package method described in the embodiment of the present invention.
Drawing reference numeral explanation:
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that if related in the embodiment of the present invention directionality instruction (such as up, down, left, right, before and after, top, Bottom ...), then directionality instruction is only used for explaining opposite between each component under a certain particular pose (as shown in the picture) Positional relationship, motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, being somebody's turn to do " first ", " second " etc. if relating to the description of " first ", " second " etc. in the embodiment of the present invention Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy Sign.It in addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution Conjunction is not present, also not the present invention claims protection scope within.
As shown in Figure 1 to Figure 3, the present invention proposes a kind of MEMS microphone package structure, including microphone circuit substrate 100, MEMS sensor 200 and ASIC amplifier 300 on the microphone circuit substrate 100, and it is set to the microphone On circuit substrate 100 and cover the metal shell 400 of the MEMS sensor 200 and ASIC amplifier 300.By MEMS sensor, On ASIC amplifier, packed by metal casing assist side (i.e. microphone circuit substrate 100), two of them chip (MEMS sensing Device, ASIC amplifier) it is welded with wiring board by gold thread (connecting wire), form a complete SMT acoustic-electric transducer sensor Device.External sound can be picked up using MEMS sensor 200, then be amplified by ASIC amplifier 300, led to Cross the function that the two chips realize acoustic-electric conversion.Moreover, metal shell 400 can be to MEMS sensor 200, ASIC amplifier 300 and microphone circuit substrate 100 carry out being provide with encapsulation, and support and the protective effect of electromagnetic shielding are played to internal structure.
Specifically, as shown in figure 4, above-mentioned microphone circuit substrate 100 includes base main body, and above-mentioned metal shell 400 Including covering at the housing main body in base main body, and the sound hole 410 being opened on the housing main body.Pass through the sound hole 410 can be passed to external sound in the metal shell 400 of microphone, and the MEMS sensor 200 in metal shell 400 can be right Incoming sound is picked up.
Moreover, above-mentioned MEMS sensor 200 includes installing in the sensor main body in base main body, it is set to sensor main body The sensor vibrating diaphragm 210 at top.Moreover, above-mentioned MEMS sensor 200 further includes being formed in sensor main body top and sound hole Sensor ante-chamber between 410, the sensor ante-chamber are corresponding with sound hole 410.By keeping sensor ante-chamber and sound hole 410 right It should be arranged, preferably external sound can be picked up.In addition, above-mentioned MEMS sensor 200 includes being set to sensor master The sensor back cavity of body bottom, the sensor back cavity and sensor ante-chamber are isolated by the sensor vibrating diaphragm 210.I.e. The sensor vibrating diaphragm 210 of MEMS sensor 200 will be divided into two parts, sound hole 410 and sensor vibrating diaphragm inside MEMS microphone Region is commonly referred to as cup (i.e. sensor ante-chamber) between 210, and another part of sensor vibrating diaphragm 210 is referred to as rear chamber and (senses Device back cavity).The sensitivity of most of MEMS microphones is increased with frequency and is improved, this is the air and microphone cup of sound hole Air interaction result.This reciprocation produces Helmholtz resonance, this with blow bottle generation sound the phenomenon that It is identical.As blowing bottle, air volume is smaller, and resonance frequency is higher;Conversely, air volume is bigger, resonance frequency is lower.
Further, above-mentioned microphone circuit substrate 100 further includes the metal blind hole 110 being opened in the base main body, The opening of the metal blind hole 110 is towards metal shell 400.Moreover, above-mentioned MEMS sensor 200 is installed in base main body, and So that the bottom cover of MEMS sensor 200 is set to the opening of metal blind hole 110.It can be opened on microphone circuit substrate 100 If metal blind hole 110, and the lid of MEMS sensor 200 is set and is installed at the metal blind hole 110 so that the sensor back cavity with it is upper State the connection of metal blind hole 110.I.e. by opening up metal blind hole 110 on microphone circuit substrate 100, and make the metal blind hole 110 connections corresponding with the sensor back cavity of MEMS sensor 200, so that the rear chamber volume of MEMS sensor 200 is by traditional technology In the volume of sensor back cavity become the volume of sensor back cavity and the sum of the cavity volume of metal blind hole 110, thus can To increase the rear chamber volume of MEMS sensor 200 under the premise of not changing the structure of MEMS sensor 200.MEMS sensor After 200 rear chamber volume becomes larger, sound wave is easier to push the movement of sensor vibrating diaphragm, it will be able to improve sensor vibration vibration of membrane frequency Rate, and the sensitivity of MEMS microphone is increased with frequency and is improved, and rear chamber volume becomes larger can also improve the low frequency of microphone Response thus improves sensitivity and the signal-to-noise ratio of microphone.In this manner it is possible to by being opened on microphone circuit substrate 100 If metal blind hole 110 to expand the rear chamber volume of MEMS sensor 200, thus just can be improved MEMS microphone sensitivity and Signal-to-noise ratio index value.
Moreover, can first dig diameter on above-mentioned microphone circuit substrate 100 can be φ when making above-mentioned metal blind hole 0.10mm~φ 3.00mm, the blind hole that depth is 0.10mm~3.0mm, dig the microphone circuit substrate 100 during blind hole At least a sandwich circuit board will not be punched in (being traditionally arranged to be multilayer circuit board), then metallize to the inner wall of the blind hole Processing, to form metal blind hole.Moreover, the metal diameter of blind hole value and depth value can be set according to actual needs It sets, to meet performance needs and cost needs simultaneously.Specifically, the diameter dimension size that blind hole is opened and sensor back cavity Diameter dimension size correspondence (it is also corresponding with the size of MEMS sensor, because large-sized MEMS sensor has major diameter Sensor back cavity), the metal blind hole being arranged in this way is equal to increase the volume (i.e. rear chamber volume) of sensor back cavity, and MEMS The performance of sensor 200 is directly proportional to the size of rear chamber volume.Similarly, the depth that blind hole is opened is also according to Mike's wind-powered electricity generation The thickness of base board 100 come be arranged (it is also corresponding with the size of MEMS sensor because large-sized MEMS sensor have it is big The microphone circuit substrate 100 of thickness), also corresponding with the diameter of sensor back cavity, i.e. the sensor back cavity of major diameter is corresponding big The blind hole of depth, the sensor back cavity of minor diameter can correspond to the blind hole of small depth.
In addition, can improve the spirit of MEMS microphone using smaller sensor ante-chamber or/and bigger sensor back cavity Sensitivity and signal-to-noise ratio.In the present embodiment, it is possible to reduce the distance between sound hole 410 and sensor vibrating diaphragm 210, it can subtract The volume of small sensor ante-chamber also can reach the purpose of the sensitivity and signal-to-noise ratio that improve MEMS microphone.Further, it is also possible to make Sensor vibrating diaphragm 210 is corresponding with sound hole 410, and sound wave can also be made to be easier that sensor vibrating diaphragm 210 is pushed to move.
In addition, including the following steps: as shown in figure 5, the present invention also proposes a kind of MEMS microphone package method
Step S100, one piece of microphone circuit substrate is provided, and opens up metal blind hole on the microphone circuit substrate; Specifically, as follows the step of opening up metal blind hole 110 on microphone circuit substrate 100:
Blind hole cavity is first made on the microphone circuit substrate 100, and then the inner wall surface of the blind hole cavity is carried out Metalized, to obtain metal blind hole on microphone circuit substrate 100;
Moreover, further, when making metal blind hole on microphone circuit substrate 100, may also include the steps of:
Step S110, according to actual needs, drill on microphone circuit substrate 100, production diameter be φ 0.10mm~ φ 3.00mm, the metal blind hole that depth is 0.10mm~3.0mm.For example, metal diameter of blind hole can be set to 0.1mm or Person 1.5mm or 3mm, and the depth of metal blind hole may be configured as 0.1mm or 1.5mm or 3mm.Specific size can root Be designed according to the size of MEMS sensor 200, can also sensitivity according to actual needs and signal-to-noise ratio be designed.Example Such as, when the diameter of sensor back cavity is 0.10mm, metal blind hole diameter can be set as 0.10mm, and metal blind hole depth can also be set as 0.10mm;When the diameter of sensor back cavity is 3.0mm, metal blind hole diameter can be set as 3.0mm, and metal blind hole depth can also be set For 3.0mm;When the diameter of sensor back cavity is 1.5mm, metal blind hole diameter can be set as 1.5mm, and metal blind hole depth can also It is set as 1.5mm.
In addition, the step of carrying out metalized to above-mentioned blind hole is as follows:
Step S120, nog plate processing first is carried out to microphone circuit substrate 100, and the hole wall of blind hole cavity is carried out clear It washes;Then metal plating is carried out to blind hole cavity, makes metal (such as copper) uniform fold on the inner wall of the blind hole cavity, obtains Metal blind hole.
Step S200, MEMS sensor and ASIC amplifier are installed on the microphone circuit substrate, and the MEMS It is electrically connected between sensor and the ASIC amplifier, between the ASIC amplifier and the microphone circuit substrate;Its In, at the metal blind hole that the MEMS sensor is set on the microphone circuit substrate and cover the metal blind hole;
Moreover, further, when installing MEMS sensor at the metal blind hole on the microphone circuit substrate, Further include following steps:
Step S210, make to fasten with glue MEMS sensor 200 on microphone circuit substrate 100, and sense MEMS The sensor back cavity of device 200 is connected to 110 face of metal blind hole.Metal blind hole 110 can be increased as sensor back cavity in this way Volume, increase the rear chamber volume of entire sensor.After the rear chamber volume of MEMS sensor 200 becomes larger, sound wave is easier to push away Dynamic sensor vibrating diaphragm movement, it will be able to the vibration frequency of sensor vibrating diaphragm is improved, and the sensitivity of MEMS microphone is with frequency liter It is high and improves, and rear chamber volume becomes larger can also improve the low frequency response of microphone, thus improve the sensitivity of microphone with Signal-to-noise ratio.In this manner it is possible to which by opening up metal blind hole 110 on microphone circuit substrate 100 MEMS sensing can not changed The rear chamber volume for expanding MEMS sensor 200 under the premise of 200 structure of device, to just can be improved the sensitivity of MEMS microphone With signal-to-noise ratio index value.
In addition, installing ASIC amplifier 300 on microphone circuit substrate 100, and connect the MEMS sensor 200, ASIC amplifier 300 and the step of microphone circuit substrate 100, are as follows:
Step S220, ASIC amplifier 300 is pasted on the microphone circuit substrate 100 using glue, and utilizes company It connects conducting wire (such as gold thread) to be electrically connected the contact of MEMS sensor 200 and the contact of ASIC amplifier 300, and ASIC is put The contact of big device 300 is electrically connected with microphone circuit substrate 100, additionally can carry out soldering reinforcing to junction.This Outside, need to illustrate when, can also first install ASIC amplifier 300 on the microphone circuit substrate 100, then install MEMS biography Sensor 200 is on the microphone circuit substrate 100.
Step S300, install metal shell 400 on the microphone circuit substrate 100, and cover MEMS sensor 200, ASIC amplifier 300 completes encapsulation.The side of metal shell 400 is welded on microphone circuit substrate 100, to be formed The electronic components such as MEMS sensor 200, ASIC amplifier 300 are closed in the accommodating chamber by one closed accommodating chamber, are utilized Metal shell 400 is packaged entire circuit.It, can also be in 100 surrounding of microphone circuit substrate for the ease of being welded to connect Design weldering circle (leg for being equivalent to a kind of annular), convenient for the edge of metal shell 400 to be welded at circle.
In addition, the present invention also proposes a kind of electronic product, including external circuit, and it is electrically connected with external circuit as above The MEMS microphone package structure.It can be arranged in 100 bottom of microphone circuit substrate of MEMS microphone package structure and connect Connect pad 120, by the connection pad 120 by microphone circuit substrate 100 and entire MEMS microphone package structure be welded to On external circuit, the integrated morphology of MEMS microphone package structure and external circuit is formed, and can be by this integrated morphology application Into some electronic products, such as mobile phone, computer, TV need to carry out in the equipment of acoustic-electric conversion.
In short, the present invention by microphone circuit substrate be arranged metal blind hole, to increase the rear chamber of MEMS sensor Volume can realize product sensitivity under the premise of not changing the MEMS sensor having and ASIC amplifier chip parameter With the raising of signal-to-noise ratio index value, it can improve the performance of product under conditions of controlling product cost.In the present embodiment, By the way that metal blind hole corresponding with sensor back cavity is arranged in new product, relative to metal blind hole not set in traditional technology The traditional product of MEMS sensor, test obtain the sensitivity of new product and sensitivity and the letter of signal-to-noise ratio numeric ratio traditional product It makes an uproar 2-3db higher than numerical value, is promoted larger.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all at this Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly It is included in other related technical areas in scope of patent protection of the invention.

Claims (10)

1. a kind of MEMS microphone package method, which comprises the steps of:
One piece of microphone circuit substrate is provided, and opens up metal blind hole on the microphone circuit substrate;
MEMS sensor and ASIC amplifier are installed on the microphone circuit substrate, and the MEMS sensor with it is described It is electrically connected between ASIC amplifier, between the ASIC amplifier and the microphone circuit substrate;Wherein, the MEMS is passed At the metal blind hole that sensor is set on the microphone circuit substrate and cover the metal blind hole;
Metal shell is installed on the microphone circuit substrate, and covers the MEMS sensor, ASIC amplifier.
2. MEMS microphone package method according to claim 1, which is characterized in that opened up on microphone circuit substrate The step of metal blind hole, is as follows:
Blind hole cavity, the inner wall surface of blind hole cavity described in metalized are made on the microphone circuit substrate.
3. MEMS microphone package method according to claim 1, which is characterized in that on the microphone circuit substrate Further include following steps when making metal blind hole:
Make that the metal diameter of blind hole is φ 0.10mm~φ 3.00mm, depth is 0.10mm~3.0mm.
4. MEMS microphone package method according to claim 1, which is characterized in that install MEMS sensor in the wheat Further include following steps when at the metal blind hole on gram wind-powered electricity generation base board:
Make to fasten with glue the MEMS sensor on the microphone circuit substrate, and makes the sensing of the MEMS sensor Device back cavity is connected to the metal blind hole face.
5. a kind of MEMS microphone package structure, which is characterized in that including microphone circuit substrate, be set to the microphone circuit MEMS sensor and ASIC amplifier on substrate, and on the microphone circuit substrate and cover the MEMS biography The metal shell of sensor and ASIC amplifier;
The microphone circuit substrate includes base main body, and the metal blind hole being opened in the base main body, the gold Belong to the opening of blind hole towards the metal shell;And the MEMS sensor is installed in the base main body, the MEMS is passed The bottom cover of sensor is set to the opening of the metal blind hole.
6. MEMS microphone package structure according to claim 5, which is characterized in that the MEMS sensor includes installing Sensor main body in the base main body, and the sensor back cavity set on the sensor main body bottom, the sensing Device back cavity is connected to the metal blind hole.
7. MEMS microphone package structure according to claim 6, which is characterized in that the metal shell includes covering at Housing main body in the base main body, and the sound hole being opened on the housing main body;
The MEMS sensor further includes the sensor ante-chamber being formed at the top of the sensor main body between the sound hole, The sensor ante-chamber is corresponding with the sound hole.
8. MEMS microphone package structure according to claim 7, which is characterized in that the MEMS sensor further includes setting Sensor vibrating diaphragm at the top of sensor main body, the sensor back cavity and the sensor ante-chamber pass through the sensor vibrating diaphragm It is isolated, the sensor vibrating diaphragm is corresponding with the sound hole.
9. according to MEMS microphone package structure described in claim 5-8 any one, which is characterized in that the metal blind hole Diameter be set as φ 0.10mm~φ 3.00mm, the depth of the metal blind hole is set as 0.10mm~3.0mm.
10. a kind of electronic product, which is characterized in that including external circuit, and be electrically connected with the external circuit such as right It is required that MEMS microphone package structure described in 5-9 any one.
CN201810994170.4A 2018-08-29 2018-08-29 MEMS microphone package method, structure and electronic product Pending CN108966103A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904149A (en) * 2019-01-08 2019-06-18 钰太芯微电子科技(上海)有限公司 A kind of integrating optical sensor
CN110856065A (en) * 2019-12-17 2020-02-28 钰太芯微电子科技(上海)有限公司 Microphone packaging structure of multisensor
CN113271527A (en) * 2020-02-14 2021-08-17 苹果公司 Sensor assembly for electronic device
WO2024114581A1 (en) * 2022-11-30 2024-06-06 维沃移动通信有限公司 Electronic device

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006748A (en) * 2004-08-19 2007-07-25 美商楼氏电子有限公司 Silicon condenser microphone and manufacturing method
CN101296530A (en) * 2007-04-29 2008-10-29 歌尔声学股份有限公司 Silicon capacitor microphone
CN201383873Y (en) * 2009-01-19 2010-01-13 歌尔声学股份有限公司 Silicon condenser microphone with enlarged back cavity
KR101369464B1 (en) * 2013-06-27 2014-03-06 주식회사 비에스이 Microphone
CN104581588A (en) * 2014-11-18 2015-04-29 上海微联传感科技有限公司 High-sensitivity high-SNR MEMS silicon microphone
CN204442688U (en) * 2015-01-26 2015-07-01 歌尔声学股份有限公司 Mems microphone
US20150189446A1 (en) * 2013-12-30 2015-07-02 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Silicon Condenser Microphone
KR20170138170A (en) * 2016-06-07 2017-12-15 주식회사 아이비기술 MEMS Microphone Device And MEMS Microphone Module Comprising The Same
CN207283808U (en) * 2017-09-05 2018-04-27 深圳市艾辰电子有限公司 A kind of highly sensitive silicon microphone
CN108141679A (en) * 2015-08-07 2018-06-08 美商楼氏电子有限公司 The entry protector portion in the sound chamber of MEMS microphone package part is penetrated into for reducing particle

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006748A (en) * 2004-08-19 2007-07-25 美商楼氏电子有限公司 Silicon condenser microphone and manufacturing method
CN101296530A (en) * 2007-04-29 2008-10-29 歌尔声学股份有限公司 Silicon capacitor microphone
CN201383873Y (en) * 2009-01-19 2010-01-13 歌尔声学股份有限公司 Silicon condenser microphone with enlarged back cavity
KR101369464B1 (en) * 2013-06-27 2014-03-06 주식회사 비에스이 Microphone
US20150189446A1 (en) * 2013-12-30 2015-07-02 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Silicon Condenser Microphone
CN104581588A (en) * 2014-11-18 2015-04-29 上海微联传感科技有限公司 High-sensitivity high-SNR MEMS silicon microphone
CN204442688U (en) * 2015-01-26 2015-07-01 歌尔声学股份有限公司 Mems microphone
CN108141679A (en) * 2015-08-07 2018-06-08 美商楼氏电子有限公司 The entry protector portion in the sound chamber of MEMS microphone package part is penetrated into for reducing particle
KR20170138170A (en) * 2016-06-07 2017-12-15 주식회사 아이비기술 MEMS Microphone Device And MEMS Microphone Module Comprising The Same
CN207283808U (en) * 2017-09-05 2018-04-27 深圳市艾辰电子有限公司 A kind of highly sensitive silicon microphone

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904149A (en) * 2019-01-08 2019-06-18 钰太芯微电子科技(上海)有限公司 A kind of integrating optical sensor
CN110856065A (en) * 2019-12-17 2020-02-28 钰太芯微电子科技(上海)有限公司 Microphone packaging structure of multisensor
CN113271527A (en) * 2020-02-14 2021-08-17 苹果公司 Sensor assembly for electronic device
WO2024114581A1 (en) * 2022-11-30 2024-06-06 维沃移动通信有限公司 Electronic device

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Application publication date: 20181207