CN108963088A - Organic Light Emitting Diode and its electron injecting layer and application - Google Patents
Organic Light Emitting Diode and its electron injecting layer and application Download PDFInfo
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- CN108963088A CN108963088A CN201711365155.5A CN201711365155A CN108963088A CN 108963088 A CN108963088 A CN 108963088A CN 201711365155 A CN201711365155 A CN 201711365155A CN 108963088 A CN108963088 A CN 108963088A
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- electron injecting
- light emitting
- organic light
- injecting layer
- emitting diode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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Abstract
The present invention relates to a kind of Organic Light Emitting Diode and its electron injecting layer and applications.The electron injecting layer includes the electron injection material as made of the first material and the second material codope；First material is selected from least one of Ba, Yb；Second material is selected from least one of Al, Ag.The electron injecting layer can guarantee being efficiently injected into for electronics, and good stability, and processing method is simple, can be suitable for the OLED device structure of inversion type.
Description
Technical field
The present invention relates to light emitting device technologies fields, more particularly to a kind of Organic Light Emitting Diode and its electron injecting layer
And application.
Background technique
Organic Light Emitting Diode (OLED) because total colouring, backlight and in terms of have wide application
Prospect and get more and more people's extensive concerning.
The device architecture that OLED is used is generally ITO/HIL/HTL/EML/ETL/EIL/Cathode.Wherein, electron injection
Layer EIL generallys use LiF, CsF, NaF, and cathode Cathode is then Mg:Ag (1:9), the Ca/Al, Ba/Al of low work function.It is this kind of
Material is sensitive to water, oxygen, easily chemically reacts, causes the OLED device service life poor, the application being unfavorable in commercialization.
In order to improve the stability of device, the OLED device structure of inversion type is a kind of effective method.It is currently used
Inverted OLED device structure is metal oxide such as ZnO, TiO using N-shaped2、MgO、ZrO2、HfO2Equal metal oxides are made
For electron injecting layer, with MoO3As hole injection layer, one layer of anode metal (Al, Ag, Au etc.) is then deposited, by cathode ITO
Side goes out light.These metal-oxide films pass through high-temperature process (200 DEG C of processing 30min- generally by precursor solution
It 1h) forms either magnetron sputtering method to be formed, wherein the sull defect of solwution method preparation is more, and film compactness is poor.Magnetic
The film purity is high that sputtering method is formed, compactness are controlled, but the specific requirement of every kind of material and process conditions difference, technique are multiple
It is miscellaneous, high production cost.
Summary of the invention
Based on this, it is necessary to provide a kind of electron injecting layer of Organic Light Emitting Diode.The electron injecting layer can guarantee
Electronics is efficiently injected into, and good stability, and processing method is simple, can be suitable for conventional or inversion type OLED device knot
Structure.
A kind of electron injecting layer of Organic Light Emitting Diode, including the electricity as made of the first material and the second material codope
Sub- injection material；First material is selected from least one of Ba, Yb；Second material in Al, Ag at least one
Kind.
First material is Ba or Yb in one of the embodiments,；Second material is Al or Ag.
The weight ratio of first material and second material is 1:6-1:10 in one of the embodiments,.It is preferred that
Weight ratio is 1:8-1:10.
First material is Ba and Yb in one of the embodiments,；Second material is Al or Ag.
The weight ratio of described Ba, Yb and second material is 0.2-0.6:0.2-0.6 in one of the embodiments:
6-10.Preferred weight ratio is 0.4-0.6:0.4-0.6:8-10.
In one of the embodiments, the electron injecting layer with a thickness of 0.5-3nm.It is preferred that the thickness of the electron injecting layer
For 1-2nm.
In one of the embodiments, include obtain prefabricated device, and the prefabricated device surface vapor deposition described in
First material and second material, form the electron injecting layer.
In one of the embodiments, during the vapor deposition, vacuum degree≤5 × 10 are controlled-4Pa。
The present invention also provides a kind of Organic Light Emitting Diodes, have the electron injecting layer.
The present invention also provides application of the Organic Light Emitting Diode in display or lighting device.
Compared with prior art, the invention has the following advantages:
The electron injecting layer of Organic Light Emitting Diode of the invention is co-doped with using by certain the first material and the second material
Electron injection material made of miscellaneous, wherein first material Ba, Yb is a kind of low workfunction metal, work function 2.7,3.1eV, with
Second materials A l, Ag matches the alloy firm for being conducive to the injection codope of electronics, and the mode of the codope can guarantee
The stability of electron injecting layer extends the service life of device, and can be made of simple vapor deposition mode, processing method letter
It is single, the OLED device structure of inversion type can be suitable for.
The type and ratio of first material and the second material are further rationally set, can be improved electron injection ability
Balance, the efficiency effect of optimised devices.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the Organic Light Emitting Diode in one embodiment of the invention.
Specific embodiment
Organic Light Emitting Diode and its electron injecting layer of the invention and application are made into one below in conjunction with specific embodiment
Step detailed description.
Embodiment 1
A kind of Organic Light Emitting Diode of the present embodiment as shown in Figure 1, including the substrate 100 containing cathode, and stacks gradually
Electron injecting layer 200, electron transfer layer 300, luminescent layer 400, hole transmission layer 500, hole injection layer on substrate 100
600 and anode 700.
Wherein, electron injecting layer 600 includes the electron injection material as made of the first material Yb and the second materials A l codope
The weight ratio of material, Yb and Al are 1:9.
The production method of above-mentioned Organic Light Emitting Diode, includes the following steps:
(1) clean: by with the glass substrate of 150nm ITO by deionized water, acetone, washing lotion, deionized water and different
The ultrasonic cleaning of five step of propyl alcohol, every step are 10-15 minutes each；It is placed in vacuum drying oven and dries after cleaning up；Substrate 100 is obtained, it is standby
With.
(2) the electron injection material Yb:Al (1:9), Yb of one layer of 1.5nm thickness the preparation of electron injecting layer: are deposited on ITO
Evaporation rate control with Al existsWith(within ± 5%), vacuum degree are 2 × 10-4Pa obtains electron injecting layer
200。
(3) prepared by electron transfer layer: the electron transfer layer TSPO1 of one layer of 35nm thickness is deposited altogether using the mode of doping:
Liq, wherein the two weight ratio is 5:5, the two evaporation rate, which all controls, isVacuum degree is 2 × 10-4Pa obtains electronics biography
Defeated layer 300.
(4) prepared by luminescent layer: the luminescent layer CBP:Ir (ppy) of one layer of 20nm thickness is then deposited altogether using the mode of doping3,
Wherein Ir (ppy)3Doping ratio is 6% (weight ratio), and the two evaporation rate is controlled asWithVacuum degree
It is 2 × 10-4Pa obtains luminescent layer 400.
(5) prepared by hole transmission layer: and then the hole mobile material CBP of one layer of 30nm thickness is deposited, evaporation rate is
Vacuum degree is 2 × 10-4Pa obtains hole transmission layer 500.
(6) prepared by hole injection layer: and then the hole-injecting material MoO of one layer of 5nm thickness of vapor deposition3, evaporation rate is
Vacuum degree is 2 × 10-4Pa obtains hole injection layer 600.
(7) prepared by metallic cathode: the anode A l of one layer of 120nm thickness is finally deposited, evaporation rate control isVacuum degree
It is 2 × 10-4Pa obtains anode 700.
Embodiment 2
A kind of Organic Light Emitting Diode of the present embodiment, structure similar embodiment 1, electron injecting layer therein include by
The weight ratio of electron injection material made of one material Ba and Yb and the second materials A g codope, Ba, Yb and Ag is 0.5:
0.5:9。
The production method of above-mentioned Organic Light Emitting Diode, includes the following steps:
(1) clean: by with the glass substrate of 150nm ITO by deionized water, acetone, washing lotion, deionized water and different
The ultrasonic cleaning of five step of propyl alcohol, every step are 10-15 minutes each；It is placed in vacuum drying oven and dries after cleaning up；Substrate is obtained, it is spare.
(2) preparation of electron injecting layer: on ITO be deposited one layer of 1.5nm thickness electron injection material Ba:Yb:Ag (0.5:
0.5:9), Ba, Yb and Ag evaporation rate control existsWith(within ± 5%), vacuum degree are
2×10-4Pa obtains electron injecting layer；
(3) prepared by electron transfer layer: the electron transfer layer TSPO1 of one layer of 35nm thickness is deposited altogether using the mode of doping:
Liq, wherein the two weight ratio is 5:5, the two evaporation rate, which all controls, isVacuum degree is 2 × 10-4Pa obtains electronics biography
Defeated layer.
(4) prepared by luminescent layer: the luminescent layer CBP:Ir (ppy) of one layer of 20nm thickness is then deposited altogether using the mode of doping3,
Wherein Ir (ppy)3Doping ratio is 6% (weight ratio), and the two evaporation rate is controlled asWithVacuum degree
It is 2 × 10-4Pa obtains luminescent layer.
(5) prepared by hole transmission layer: and then the hole mobile material CBP of one layer of 30nm thickness is deposited, evaporation rate is
Vacuum degree is 2 × 10-4Pa obtains hole transmission layer.
(6) prepared by hole injection layer: and then the hole-injecting material MoO of one layer of 5nm thickness of vapor deposition3, evaporation rate is
Vacuum degree is 2 × 10-4Pa obtains hole injection layer.
(7) prepared by metallic cathode: the anode A l of one layer of 120nm thickness is finally deposited, evaporation rate control isVacuum degree
It is 2 × 10-4Pa obtains anode.
Embodiment 3
A kind of Organic Light Emitting Diode of the present embodiment, structure similar embodiment 1, electron injecting layer therein include by
The weight ratio of electron injection material made of one material Ba and the second materials A l codope, Ba and Al are 1:9.
The production method of above-mentioned Organic Light Emitting Diode, includes the following steps:
(1) clean: by with the glass substrate of 150nm ITO by deionized water, acetone, washing lotion, deionized water and different
The ultrasonic cleaning of five step of propyl alcohol, every step are 10-15 minutes each；It is placed in vacuum drying oven and dries after cleaning up；Substrate is obtained, it is spare.
(2) the electron injection material Ba:Al (1:9), Ba of one layer of 1.5nm thickness the preparation of electron injecting layer: are deposited on ITO
Exist with the control of Al evaporation rateWith(within ± 5%), vacuum degree are 2 × 10-4Pa obtains electron injecting layer.
(3) prepared by electron transfer layer: the electron transfer layer TSPO1 of one layer of 35nm thickness is deposited altogether using the mode of doping:
Liq, wherein the two weight ratio is 5:5, the two evaporation rate, which all controls, isVacuum degree is 2 × 10-4Pa obtains electronics biography
Defeated layer.
(4) prepared by luminescent layer: the luminescent layer CBP:Ir (ppy) of one layer of 20nm thickness is then deposited altogether using the mode of doping3,
Wherein Ir (ppy)3Doping ratio is 6% (weight ratio), and the two evaporation rate is controlled asWithVacuum degree
It is 2 × 10-4Pa obtains luminescent layer.
(5) prepared by hole transmission layer: and then the hole mobile material CBP of one layer of 30nm thickness is deposited, evaporation rate is
Vacuum degree is 2 × 10-4Pa obtains hole transmission layer.
(6) prepared by hole injection layer: and then the hole-injecting material MoO of one layer of 5nm thickness of vapor deposition3, evaporation rate is
Vacuum degree is 2 × 10-4Pa obtains hole injection layer.
(7) prepared by metallic cathode: the anode A l of one layer of 120nm thickness is finally deposited, evaporation rate control isVacuum degree
It is 2 × 10-4Pa obtains anode.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of electron injecting layer of Organic Light Emitting Diode, which is characterized in that including being co-doped with by the first material and the second material
Electron injection material made of miscellaneous；First material is selected from least one of Ba, Yb；Second material is selected from Al, Ag
At least one of.
2. the electron injecting layer of Organic Light Emitting Diode according to claim 1, which is characterized in that first material is
Ba or Yb；Second material is Al or Ag.
3. the electron injecting layer of Organic Light Emitting Diode according to claim 2, which is characterized in that first material with
The weight ratio of second material is 1:6-1:10.
4. the electron injecting layer of Organic Light Emitting Diode according to claim 1, which is characterized in that first material is
Ba and Yb；Second material is Al or Ag.
5. the electron injecting layer of Organic Light Emitting Diode according to claim 4, which is characterized in that described Ba, Yb and institute
The weight ratio for stating the second material is 0.2-0.6:0.2-0.6:6-10.
6. the electron injecting layer of Organic Light Emitting Diode according to claim 1-5, which is characterized in that the electronics
Implanted layer with a thickness of 0.5-3nm.
7. the preparation method of the electron injecting layer of Organic Light Emitting Diode described in any one of claims 1-6, which is characterized in that
First material and second material is deposited including obtaining prefabricated device, and on the surface of the prefabricated device, is formed
The electron injecting layer.
8. the preparation method of the electron injecting layer of Organic Light Emitting Diode according to claim 7, which is characterized in that described
During vapor deposition, vacuum degree≤5 × 10 are controlled-4Pa。
9. a kind of Organic Light Emitting Diode, which is characterized in that have electron injecting layer described in any one of claims 1-6.
10. application of the Organic Light Emitting Diode as claimed in claim 9 in display or lighting device.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101983398A (en) * | 2009-04-07 | 2011-03-02 | 松下电器产业株式会社 | Image display device and correcting method therefor |
| CN102239741A (en) * | 2009-01-16 | 2011-11-09 | 夏普株式会社 | Organic el element and method for manufacturing same |
| WO2012005009A1 (en) * | 2010-07-09 | 2012-01-12 | 出光興産株式会社 | Imidazopyridine derivatives and organic electroluminescent elements containing same |
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- 2017-12-18 CN CN201711365155.5A patent/CN108963088A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102239741A (en) * | 2009-01-16 | 2011-11-09 | 夏普株式会社 | Organic el element and method for manufacturing same |
| CN101983398A (en) * | 2009-04-07 | 2011-03-02 | 松下电器产业株式会社 | Image display device and correcting method therefor |
| WO2012005009A1 (en) * | 2010-07-09 | 2012-01-12 | 出光興産株式会社 | Imidazopyridine derivatives and organic electroluminescent elements containing same |
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Application publication date: 20181207 |