CN108962882A - A kind of UV LED encapsulating structure, production method and sterilizing unit - Google Patents
A kind of UV LED encapsulating structure, production method and sterilizing unit Download PDFInfo
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- CN108962882A CN108962882A CN201810723310.4A CN201810723310A CN108962882A CN 108962882 A CN108962882 A CN 108962882A CN 201810723310 A CN201810723310 A CN 201810723310A CN 108962882 A CN108962882 A CN 108962882A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
- A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
- A61L2/08—Radiation
- A61L2/10—Ultra-violet radiation
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L9/00—Disinfection, sterilisation or deodorisation of air
- A61L9/16—Disinfection, sterilisation or deodorisation of air using physical phenomena
- A61L9/18—Radiation
- A61L9/20—Ultra-violet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The present invention provides a kind of UV LED encapsulating structure, production method and sterilizing units; the encapsulating structure includes substrate, array distribution in multiple UV LEDs, the driving chip that is electrically connected on substrate and with UV LED and the array protective layer being covered on UV LED and driving chip on substrate, and the wavelength of each UV LED is in 100nm between 400nm.UV LED encapsulating structure provided by the invention, pass through the multiple UV LEDs of array distribution on substrate, improve the uniformity of plane of illumination illumination, and the wavelength of each UV LED reaches best sterilization effect using wavelength collocation, furthermore in 100nm between 400nm, multiple UV LEDs are set on substrate, the current density of single UV LED can be reduced, can obtain high-power while realize high photosynthetic efficiency, enhance bactericidal effect.
Description
Technical field
The invention belongs to LED technology fields, are to be related to a kind of UV LED encapsulation more specifically
Structure, production method and sterilizing unit.
Background technique
UV LED (UV-LED) according to wavelength can be divided near ultraviolet (UVA, wave band 315nm-400nm),
Medium wave ultraviolet (UVB, wave band 280nm-315nm) and deep ultraviolet (its wave band of UVC is 100nm-280nm).UVA is mainly used
In photocuring, UVB is mainly used for treating skin disease, and UVC is mainly used for sterilizing.Ultraviolet radiation for sterilizing and disinfecting is to utilize appropriate wave
The molecular structure of DNA (DNA) or RNA (ribonucleic acid) in long ultraviolet damage microflora organisms cell, make
It is dead at growth cell death and (or) regenerative cell, achieve the effect that sterilizing.General microorganism individual it is bigger or
The quantity of person intracorporal DNA or RNA is more, lower to the sensibility of ultraviolet light, inactivates degree with regard to smaller.It is generated by ultraviolet light
Photochemical reaction, germ, virus, antibiotic and organic micro-pollutants etc. can be degraded to organic carbon survey range hereinafter,
And the microorganisms such as bacterium, virus have ultraviolet light can not resistance.Ultraviolet light can kill various microorganisms, including bacterium is numerous
Grow body, brood cell, mycobacterium, virus, fungi, Richettsia and mycoplasma etc..However, wavelength of the different strains to ultraviolet light
The tolerance of selectivity and intensity is different, and traditional Single wavelength LED is unable to reach the effect of broad-spectrum sterilization intensity is adjustable.
The main ultra-violet bands to be used of ultraviolet-sterilization disinfection are UVC, and the strongest wave band of bactericidal effect is 250nm-
270nm.And UVC output intensity is to measure the major parameter of uv disinfection disinfection, and by taking Disinfection of Municipal Wastewater as an example, average
Exposure dose is lower than this value in 300J/m2 or more, it is possible to photoreactivation phenomenon occurs, i.e. germ cannot thoroughly be killed, and be received
It is brought back to life again after radiation of visible light, reduces bactericidal effect.Usual germicidal efficiency requirement is higher, and required exposure dose is got over
Greatly.The current universal efficiency of UVC-LED chip is relatively low, and bactericidal effect is poor.
Influence microorganism receive enough ultraviolet light dosage another principal element be shadow surface uniformity, when
One timing of UVC output intensity and irradiation time, the lower practical acceptable dose of individual surface microorganism that will will cause of uniformity is insufficient,
The possible intensity again of other receiving surface is superfluous, so that whole bactericidal effect is bad.Conventional method is the side through secondary optical lens
Method becomes the light being coupled out uniformly, but simultaneously as the light transmittance problem of lens and long-term ageing etc. will lead to centainly
Light loss.
Summary of the invention
It is existing in the prior art to solve the purpose of the present invention is to provide a kind of UV LED encapsulating structure
It can not broad-spectrum sterilization, the technical problem that germicidal efficiency is low, bactericidal effect is poor.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of UV LED encapsulating structure is provided,
Including substrate, array distribution on the substrate multiple UV LEDs, be set to the substrate on and with it is described ultraviolet
The driving chip of light emitting diode electrical connection and the array being covered on the UV LED and the driving chip
Protective layer, the wavelength of each UV LED is in 100nm between 400nm.
Further, the UV LED includes the N-type electrode bonded layer being cascading, the expansion of N-type electric current
Dissipate layer, active light-emitting cells, p-type current spread layer unit and P-type electrode bonded layer, the P-type electrode bonded layer and the drive
Dynamic chip electrical connection, the N-type electrode bonded layer ground connection.
Further, it is additionally provided between the array protective layer and the N-type electrode bonded layer and is bonded with the N shape electrode
The conductive conductive layer of layer, is additionally provided with the insulating layer for preventing short circuit between the conductive layer and the P-type electrode bonded layer.
Further, data driver and scanning for driving the UV LED are equipped in the pedestal to drive
Dynamic device, power end and ground terminal, the data driver, the scanner driver, the power end and the ground terminal
It is electrically connected with the driving chip.
Further, the array protective layer is made of polymer-based material and inorganic material, the polymer-based material
For silica gel, silicone resin, perhaps the epoxy resin inorganic material is aluminium oxide, aluminium nitride or silica.
The present invention also provides a kind of production methods of UV LED encapsulating structure, comprising the following steps:
S10: the substrate for carrying and driving UV LED is made；
S20: production UV LED；
S30: by each UV LED using Electrostatic Absorption, Van der Waals force absorption or magnetic-adsorption by the way of flood tide
It is successively transferred to the corresponding position of substrate and fits on substrate, form UV LED array；
S40: it is completed to ultra-violet light-emitting two pole using preforming process production array protective layer and using surface mount process
The sealing of pipe array.
Further, step S20 the following steps are included:
S201: N-type buffer layer, N-type current-diffusion layer, active illuminating layer and p-type are sequentially formed in epitaxial substrate layer
Current-diffusion layer；
S202: by etched portions p-type current-diffusion layer and active illuminating layer, make accordingly part N-type current-diffusion layer
Expose, and p-type current-diffusion layer is made to form multiple p-type current spread layer units, active illuminating layer is made to form multiple active light emissives
Layer unit；
S203: p-shaped electrode bonded layer is made on the surface of each p-shaped current spread layer unit, is then bonded in p-shaped electrode
The surface of layer and N-type current-diffusion layer makes sacrificial layer, and opens up through-hole on the sacrificial layer of p-shaped electrode bonding layer surface；
S204: transfer fixing layer and transfer substrate layer are sequentially formed on the surface of sacrificial layer, and by epitaxial substrate layer, N shape
Buffer layer peels off, and exposes N shape current-diffusion layer, and growth forms N-type electrode bonded layer on N shape current-diffusion layer.
The present invention also provides a kind of sterilizing units, including above-mentioned UV LED encapsulating structure.
It further, further include control system for controlling the UV LED brightness and switch, the control
System processed is electrically connected with the driving chip.
Further, the control system includes central processing unit, for the central processing unit provides the power supply of electric power, connects
The control chip and sensor, the data sink and array driver that receive the central processing unit instruction of extraneous instruction are received,
The array driver is electrically connected with the driving chip.
The beneficial effect of UV LED encapsulating structure and sterilizing unit provided by the invention is: with the prior art
It compares, UV LED encapsulating structure of the present invention is promoted by the multiple UV LEDs of array distribution on substrate
The uniformity of plane of illumination illumination guarantees that each position of plane of illumination receives the irradiation of enough dose, and each ultra-violet light-emitting
The wavelength of diode is in 100nm to the ultra-violet light-emitting two for the strain selection different wave length that between 400nm, can be inactivated as needed
Pole pipe reaches best sterilization effect using wavelength collocation, in addition, multiple UV LEDs are arranged on substrate, can reduce list
The current density of a UV LED, under the driving of smaller current, quantum efficiency is higher, can be high-power in acquisition
High photosynthetic efficiency is realized simultaneously, enhances bactericidal effect.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the structure chart of UV LED encapsulating structure provided in an embodiment of the present invention；
Fig. 2 is the single pixel structure chart of UV LED encapsulating structure provided in an embodiment of the present invention；
Fig. 3 is the structure chart of UV LED provided in an embodiment of the present invention；
Fig. 4 is the structure chart of active light emissive layer unit provided in an embodiment of the present invention；
Fig. 5 is the fabrication processing figure of UV LED encapsulating structure provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram for the sterilizing unit that the embodiment of the present invention one provides；
Fig. 7 is the functional schematic of sterilizing unit provided by Embodiment 2 of the present invention；
Fig. 8 is the functional schematic for the sterilizing unit that the embodiment of the present invention three provides；
Fig. 9 is the structural schematic diagram for the sterilizing unit that the embodiment of the present invention four provides；
Figure 10 is the structural schematic diagram for the sterilizing unit that the embodiment of the present invention five provides；
Figure 11 is the functional schematic of control system provided in an embodiment of the present invention.
Wherein, each appended drawing reference in figure:
1- UV LED encapsulating structure；11- UV LED；111-N type electrode bonded layer；112-N type
Current-diffusion layer；113- active light emissive layer unit；1130- active illuminating layer；1131-N type covering；1132- multi layer quantum well；
1133-P type covering；114-P type current spread layer unit；1140-P type current-diffusion layer；115-P type electrode bonded layer；12- drives
Dynamic chip；13- substrate；14- array protective layer；15- driving tube；16- conductive layer；17- ground wire conductive electrode；18- insulating layer；
201- epitaxial substrate layer；202-N type buffer layer；Groove between 204- platform；205- sacrificial layer；206- through-hole；207- transfer is fixed
Layer；208- shifts substrate layer；300- sterilizing lamp；301- shell；302- connector；303- protective cover；304- power panel；400- tool
There is the air conditioner of air-cleaning function；500- has the refrigerator of sterilization fresh-keeping function；600- water-cooling type ultraviolet disinfection sterilizes mould group；
601- water-cooled module shell；602- water inlet；603- water outlet；604- electrical connector；700- ultraviolet disinfection sterilizes mould group；
701- hollow housing；702- fan；703- strainer；8- control system.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or indirectly on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.
It is to be appreciated that term " length ", " width ", "upper", "lower", "front", "rear", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on the figure or position are closed
System, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have
Specific orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
Referring to Fig. 1, existing be illustrated UV LED encapsulating structure 1 provided by the invention.The ultra-violet light-emitting
Diode package structure 1, including substrate 13 and array on multiple UV LEDs 11 on substrate 13, substrate 13 also
Equipped with for driving the driving chip 12 of each UV LED 11, gone back on UV LED 11 and driving chip 12
Equipped with array protective layer 14, for array protective layer 14 for the device on protective substrate 13, array protective layer 14 can be antiultraviolet
Silica gel or quartz glass etc..Multiple arrangements of UV LED 11 form 11 array of UV LED, can basis
It is required that by its custom cut at different sizes, different capacity, different wave length, and combine and meet different application needs.Ultraviolet hair
11 array of optical diode is M N array, and M is line number, and N is columns, and M and N are the natural number more than or equal to 1.Ultraviolet hair
The size of optical diode 11 is at 1 μm of 1 μ m between 100 μm of 100 μ m.In some specific applications, it is possible to use larger ruler
Very little chip, such as 300 μm of equidimensions of 200 μm of 200 μ ms or 300 μ ms.The wavelength of each UV LED 11 is equal
In 100nm between 400nm, the wavelength of each UV LED 11 can be identical, can not also be identical.It, can when wavelength is identical
It is effectively sterilized for single culture, when wavelength is not identical, various types of other bacterium can be killed, realize broad-spectrum sterilization.Wherein,
Wavelength is not identical to refer to UV LED 11 at least with two or more wavelength.
UV LED encapsulating structure 1 provided by the invention, compared with prior art, two pole of ultra-violet light-emitting of the present invention
Pipe encapsulating structure 1, UV LED encapsulating structure 1 of the present invention pass through the multiple ultra-violet light-emittings two of array distribution on the substrate 13
Pole pipe 11 improves the uniformity of plane of illumination illumination, guarantees that each position of plane of illumination receives the irradiation of enough dose, and each
The wavelength of a UV LED 11 selects different wave length in 100nm to the strain that between 400nm, can be inactivated as needed
UV LED 11, using wavelength collocation reach best sterilization effect, in addition, multiple ultra-violet light-emittings are arranged on substrate 13
Diode 11 can reduce the current density of single UV LED 11, under the driving of smaller current, quantum efficiency compared with
Height can obtain high-power while realize high photosynthetic efficiency, enhance bactericidal effect.
Fig. 3 and Fig. 4 is please referred to, a kind of specific implementation as UV LED encapsulating structure 1 provided by the invention
Mode, UV LED 11 includes the N-type electrode bonded layer 111 being cascading, N-type current-diffusion layer 112, active
Luminescence unit, p-type current spread layer unit 114 and P-type electrode bonded layer 115, P-type electrode bonded layer 115 and driving chip 12
Electrical connection, N-type electrode bonded layer 111 are grounded.N-type electrode bonded layer 111 can be but be not limited to Ni/Au, Cr/Au or its alloy
Deng thickness is chosen as 5nm-10nm or 40nm-100nm.N-type current-diffusion layer 112 can be the N-type AlGaN/ of Si doping
AlInGaN or its combination, play thickness and are chosen as 1 μm to 2 μm.Optionally, active light emissive layer unit 113 include N-type covering 1131,
Multi layer quantum well 1132 and p-type covering 1133, wherein N-type covering 1131 is set to N-type current-diffusion layer 112 and multi-layer quantum
Between trap 1132, p-type covering 1133 is set between multi layer quantum well 1132 and p-type current spread layer unit 114.Multi layer quantum well
1132 are made of Alx1Gay1N (well)/Alx2Gay2N (barrier), wherein X1+Y1=X2+Y2=1, X1 0.45 to
Between 0.85, for X2 between 0.65 to 0.90, multi layer quantum well 1132 can also be by Inx1Gay1N (well)/Inx2Gay2N
(barrier), Alx1Iny1Ga1-x1-y1N (well)/Alx2Iny2Ga1-x2-y2N (barrier) composition, in specific condition
Under, to promote crystal growth quality, thin-layered medium layer, such as SiN can also be added between well and barrier.Multi layer quantum well
1132 are superimposed for single layer well or barrier, can contain 1 to 10 single layer quantum well structure, thickness is chosen as 10nm-
100nm.N-type covering 1131 has higher forbidden bandwidth, the mostly Alx1Gay1N of n-type doping (Si doping) compared with quantum well layer
Or Inx1Gay1N or Alx1Iny1Ga1-x1-y1N, it is used as hole blocking layer, thickness is chosen as 5nm to 20nm；P-type covering
1133 compared with quantum well layer have higher forbidden bandwidth, mostly p-type doping or Mg doping Alx2Gay2N or Inx2Gay2N or
Alx2Iny2Ga1-x2-y2N, is used as electronic barrier layer, and thickness is chosen as 5nm to 20nm.P-type current spread layer unit 114
The p-type AlGaN/GaN for being chosen as adulterating for Mg is combined or AlInGaN/InGaN is combined, and thickness is chosen as 10nm to 50nm.P electricity
Pole bonded layer can be but be not limited only to Ni/Au, Cr/Au or its alloy etc., thickness are chosen as 5nm to 10nm or 40nm extremely
100nm.The above laminated construction growth is all made of the completion of typical semiconductor film-forming process.
Referring to Fig. 2, a kind of specific embodiment as UV LED encapsulating structure 1 provided by the invention,
The conductive layer 16 with N shape electrode bonded layer conduction, conductive layer are additionally provided between array protective layer 14 and N-type electrode bonded layer 111
The insulating layer 18 for preventing short circuit is additionally provided between 16 and P-type electrode bonded layer 115.In 11 pixel knot of UV LED
In structure, N-type electrode bonded layer 111 is grounded by conductive layer 16 for being electrically connected N-type electrode bonded layer 111 and ground wire lead electrode.
Insulating layer 18 is used for isolating n-type electrode bonded layer 111 and P-type electrode bonded layer 115, prevents short circuit.UV LED 11
It is attached on substrate 13, driving tube 15, driving tube 15 and (two pole of ultra-violet light-emitting of P-type electrode bonded layer 115 is equipped with inside substrate 13
11 anode of pipe) electrical connection, N-type electrode bonded layer 111 (11 cathode of UV LED) passes through conductive layer 16 and ground wire is conductive
Electrode 17 is electrically connected.Ground wire conductive electrode 17 is metal material, which can be one of Au, Ag, Cu, Ni, W, Ti
Or multiple combinations.Driving tube 15 can be a-Si or Poly-Si active array driving tube 15, N type or P type,
Top-gated or bottom grating structure.A-Si or Poly-Si active array may include one or more driving tubes 15, one or more
Capacitor, one or more switching tubes can be according to application demand flexible design.
A kind of specific embodiment party please continue to refer to Fig. 2, as UV LED encapsulating structure 1 provided by the invention
Formula, be equipped in pedestal data driver for driving the UV LED 11 and scanner driver, power end and
Ground terminal, data driver, scanner driver, power end and ground terminal are electrically connected with driving chip 12.Pedestal can be thin
Film crystal display panel (TFT-display substrate), the setting of data driver and scanner driver accurately controls often
The switch of one UV LED 11 and brightness.Data driver and scanner driver can be integrated in driving tube 15, electricity
Source is electrically connected with driving tube 15, and ground terminal is electrically connected with ground wire conductive electrode 17.
Referring to Fig. 1, a kind of specific embodiment as UV LED encapsulating structure 1 provided by the invention,
Array protective layer 14 is made of polymer-based material and inorganic material, and polymer-based material is silica gel, silicone resin or asphalt mixtures modified by epoxy resin
Rouge, inorganic material are aluminium oxide, aluminium nitride or silica, and array protective layer 14 is used to protecting circuit on pedestal, ultraviolet
Light emitting diode 11 and electric connection line etc. meet luminous or display area light transmission demand.
Referring to Fig. 5, existing be illustrated the production method of UV LED encapsulating structure 1 provided by the invention.
The production method the following steps are included:
S10: the substrate 13 for carrying and driving UV LED 11 is made；
S20: production UV LED 11；
S30: each UV LED 11 is huge by the way of Electrostatic Absorption, Van der Waals force absorption or magnetic-adsorption
Amount is successively transferred to the corresponding position of substrate 13 and fits on substrate 13, forms 1111 array of UV LED；
S40: it is completed to ultra-violet light-emitting two using preforming process production array protective layer 14 and using surface mount process
The sealing of 11 array of pole pipe.
In S20, multiple UV LEDs 11 can be made simultaneously, pass through step S30 realization pair after completing again
UV LED 11 individually successively shifts.
Further, S20 the following steps are included:
S201: N-type buffer layer 202, N-type current-diffusion layer 112, active light emissive are sequentially formed in epitaxial substrate layer 201
Layer 1130 and p-type current-diffusion layer 1140；
S202: by etched portions p-type current-diffusion layer 1140 and active illuminating layer 1130, make accordingly part N-type electricity
It flows diffusion layer 112 to expose, and p-type current-diffusion layer 1140 is made to form multiple p-type current spread layer units 114, make active light emissive
Layer 1130 forms multiple active light emissive layer units 113；
S203: p-shaped electrode bonded layer is made on the surface of each p-shaped current spread layer unit, is then bonded in p-shaped electrode
The surface of layer and N-type current-diffusion layer 112 makes sacrificial layer 205, and opens on the sacrificial layer 205 of p-shaped electrode bonding layer surface
If through-hole 206；
S204: transfer fixing layer 207 and transfer substrate layer 208 are sequentially formed on the surface of sacrificial layer 205, and extension is served as a contrast
Bottom 201, N shape buffer layer peel off, and expose N shape current-diffusion layer, and growth forms N-type electrode key on N shape current-diffusion layer
Close layer 111.
Wherein, epitaxial substrate layer 201 is usually Sapphire, Si, SiC, GaN etc.；N-type buffer layer 202 is main technique,
Because the material of N-type buffer layer 202 selects and growth quality directly affects follow-up function layer, especially active illuminating layer 1130
Luminous efficiency, usually low-pressure MOCVD high temperature slowly grows multilayer Al N or GaN, and thickness is chosen as 1 μm to 2um.N-type electric current
Diffusion layer 112, active illuminating layer 1130, p-type current-diffusion layer 1140 by MOCVD technique ordering growth, then pass through
The semiconductor etching process such as ICP-RIE form miniature platform structure (including p-type until leak out part N-type current-diffusion layer 112
Current spread layer unit 114 and active light emissive layer unit 113) and platform between groove 204, in p-type current spread layer unit 114
Upper surface makes P-type electrode bonded layer 115, makes sacrificial layer 205 in p-type bonded layer upper surface, 205 material of sacrificial layer can be
SiO2 or SiNx；Through-hole 206, through-hole 206 are opened up followed by the insulating layer 18 of 115 upper surface of P-type electrode bonded layer
Dimensional parameters design is related to subsequent transfer and binding technique；Miniature platform structure is transferred to transfer by shifting fixing layer 207
Substrate layer 208, transfer fixing layer 207 can be adhesive (such as BCB benzocyclobutene or Epoxy epoxy resin material), transfer
The material of substrate layer 208 can be PDMS or PI etc..Epitaxial substrate layer 201 and N-type buffer layer 202 can pass through laser lift-off, etching
Or grinding technics is stripped until exposed portion N-type current-diffusion layer 112, then grows on N-type current-diffusion layer 112
N-type electrode bonded layer 111 so far forms 11 array of UV LED.
Fig. 6 to Figure 10 is please referred to, the present invention also provides a kind of sterilizing units, including the ultraviolet hair in any of the above-described embodiment
Optical diode package structure 1.
Specifically, referring to Fig. 6, being a kind of sterilizing unit of the embodiment of the present invention one, i.e. sterilizing lamp 300.The sterilization
Lamps and lanterns 300 include shell 301, the power panel 304 in shell 301 and the ultra-violet light-emitting two being electrically connected with power panel 304
Pole pipe 11 or UV LED encapsulating structure 1.1 side of UV LED encapsulating structure is additionally provided with protective cover 303,
Protective cover 303 can be made of quartz glass, for protecting the element inside shell 301 is against damages also to have for ultraviolet light outgoing
Window.The both ends of shell 301 all have connector 301, which can connect conducting with external lamp socket, are power panel
304 provide electric power.The sterilizing lamp 300 is main to be sterilized by irradiating body surface, can be widely applied to hospital, child
The public places such as garden, can also be according to using the difference of power to do miniaturization processing, so as to be used for smallclothes personal belongings, such as
The surface sterilizations sterilization processings such as suitcase, mobile phone, personal ornaments.
Referring to Fig. 7, being a kind of sterilizing unit of the embodiment of the present invention two, i.e., with the air conditioner of air-cleaning function
400.The air conditioner 400 includes that air inlet and air outlet, the filter layer being sequentially arranged between air inlet and air outlet, anion are empty
Gas purification system and UV purification system, for real-time monitoring house moss amount dust inductor, be used for real-time monitoring room
The temperature and humidity sensor of interior temperature and indoor humidity, with humidification and dehumidification function humidity control apparatus and be set to the sky
Adjust the positive touch display screen of device, power supply system and control system 8.UV purification system can be one or more ultraviolet hairs
Optical diode 11 or UV LED encapsulating structure 1.UV purification system can be according to the shell of different air conditioners
Design shape, installation site and use power setting.
Referring to Fig. 8, being a kind of sterilizing unit of the embodiment of the present invention three, i.e., with the refrigerator 500 of sterilization fresh-keeping function.
The refrigerator 500 includes refrigerator main body, votage control switch, time set, control system 8 and disinfection and sterilization module.Control system 8 is used
In the switch for controlling UV-LED disinfection and sterilization module and use the time.Disinfection and sterilization module can be one or more ultra-violet light-emittings
Diode 11 or UV LED encapsulating structure 1.Disinfection and sterilization module can be according to interior refrigerator space, design shape
Shape, installation site and use power setting.
Referring to Fig. 9, being a kind of sterilizing unit of the embodiment of the present invention four, i.e. water-cooling type ultraviolet disinfection sterilizes mould group 600,
It includes water-cooled module shell 601, and water inlet 602 and water outlet 603 are offered on water-cooled module shell 601, is also set on shell
There is the electrical connector 604 that can be electrically connected with external power supply, is equipped with inside water-cooled module shell 601 and 604 electricity of electrical connector
The control system 8 of connection is additionally provided with one or more UV LEDs 11 or ultraviolet inside water-cooled module shell 601
Light-emitting diode encapsulation structure 1.Water-cooling type ultraviolet disinfection sterilization mould group 600 can be applied to purifier, swimming pool, at sewage
Carry out disinfection sterilization in the relevant devices such as reason system, medicinal water disinfection, to reduce the risk of transmission.Usual this kind of mould group
Using power it is larger, therefore using water cooling reduce UV LED 11 temperature, guarantee its service life and long-term reliability.
In use process, in order to avoid with the contact of human eye and skin, UV LED more than 11 is sealed in shell, in response to individual
Occasion exposed can also be used using (such as water process) is needed.
Referring to Fig. 10, being a kind of sterilizing unit of the embodiment of the present invention five, i.e., ultraviolet disinfection sterilizes mould group 700, packet
Hollow housing 701, fan 702, control system 8, strainer 703 etc. are included, further includes one or more UV LEDs 11, or
Person's UV LED encapsulating structure 1.Fan 702, control system 8, UV LED encapsulating structure 1, strainer 703 according to
Secondary to be fixed in hollow housing 701, fan 702, UV LED encapsulating structure 1 are connect with the input terminal of control system 8,
Its output end is reserved lead and is connect with external power supply, 8 driving fan 702 of control system and UV LED after power supply is connected
Encapsulating structure 1 works.The sterilization mould group can be applied to wardrobe shoe-cabinet sterilization remove odors, in-vehicle air purification and eliminate peculiar smell,
In the relevant devices such as Household Air Purifier, kitchen and toilet facility and Domestic sterilising cupboard, recycling sterilizing is carried out to the air in locating space
Processing, reduces the propagation and diffusion of bacterial virus.In use process, in order to avoid with the contact of human eye and skin, ultra-violet light-emitting
Diode more than 11 is sealed in shell, in response to individual occasions using (such as water process) is needed, exposed can also be used.
Figure 11 is please referred to, as a kind of specific embodiment of sterilizing unit provided by the invention, control system 8 includes
Central processing unit, the power supply that electric power is provided for the central processing unit, the control chip and sensor, reception for receiving extraneous instruction
The data sink and array driver of central processing unit instruction, array driver are electrically connected with driving chip 12.The control system
System 8 may also include to be analyzed for data buffering and the memory of circular treatment, the power-supply controller of electric for controlling power supply, for data
With the intelligent chip of deep learning, intelligent chip reaches display effect for assisting central processing unit to provide Optimal Control signal
Fruit is best and system intelligent.Power supply is that central processing unit, memory, sensor, intelligent chip etc. provide electric power, sensor, intelligence
Energy chip etc. receives extraneous instruction, and instruction is sent to central processing unit, is then transmit to data sink and array driving
Device, array driver may include line driver and row driver, and corresponding electric current is made to be attached to corresponding each ultra-violet light-emitting two
Pole pipe 11 realizes the independent control to UV LED 11.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of UV LED encapsulating structure, it is characterised in that: including substrate, array distribution in more on the substrate
It a UV LED, the driving chip being electrically connected on the substrate and with the UV LED and covers
The array protective layer being placed on the UV LED and the driving chip, the wave of each UV LED
Length is in 100nm between 400nm.
2. UV LED encapsulating structure as described in claim 1, it is characterised in that: the UV LED packet
Include the N-type electrode bonded layer being cascading, N-type current-diffusion layer, active light-emitting cells, p-type current spread layer unit and P
Type electrode bonded layer, the P-type electrode bonded layer are electrically connected with the driving chip, the N-type electrode bonded layer ground connection.
3. UV LED encapsulating structure as claimed in claim 2, it is characterised in that: the array protective layer and described
The conductive layer with the N shape electrode bonded layer conduction, the conductive layer and p-type electricity are additionally provided between N-type electrode bonded layer
The insulating layer for preventing short circuit is additionally provided between the bonded layer of pole.
4. UV LED encapsulating structure as described in claim 1, it is characterised in that: be equipped in the pedestal for driving
Move data driver and scanner driver, the power end and ground terminal of the UV LED, the data-driven
Device, the scanner driver, the power end and the ground terminal are electrically connected with the driving chip.
5. UV LED encapsulating structure as described in claim 1, it is characterised in that: the array protective layer is by high score
Subbase material and inorganic material composition, the polymer-based material are silica gel, silicone resin or epoxy resin, the inorganic material
For aluminium oxide, aluminium nitride or silica.
6. such as the production method of UV LED encapsulating structure described in any one of claim 1 to 5, which is characterized in that
The following steps are included:
S10: the substrate for carrying and driving UV LED is made；
S20: production UV LED；
S30: by each UV LED using Electrostatic Absorption, Van der Waals force absorption or magnetic-adsorption by the way of flood tide successively
It is transferred to the corresponding position of substrate and fits on substrate, form UV LED array；
S40: it is completed to UV LED battle array using preforming process production array protective layer and using surface mount process
The sealing of column.
7. the production method of UV LED encapsulating structure as claimed in claim 6, which is characterized in that step S20 packet
Include following steps:
S201: N-type buffer layer, N-type current-diffusion layer, active illuminating layer and p-type electric current are sequentially formed in epitaxial substrate layer
Diffusion layer；
S202: by etched portions p-type current-diffusion layer and active illuminating layer, making accordingly part N-type current-diffusion layer exposing,
And p-type current-diffusion layer is made to form multiple p-type current spread layer units, active illuminating layer is made to form multiple active illuminating layer lists
Member；
S203: making p-shaped electrode bonded layer on the surface of each p-shaped current spread layer unit, then in p-shaped electrode bonded layer and
The surface of N-type current-diffusion layer makes sacrificial layer, and opens up through-hole on the sacrificial layer of p-shaped electrode bonding layer surface；
S204: transfer fixing layer and transfer substrate layer are sequentially formed on the surface of sacrificial layer, and epitaxial substrate layer, N shape are buffered
Layer peels off, and exposes N shape current-diffusion layer, and growth forms N-type electrode bonded layer on N shape current-diffusion layer.
8. sterilizing unit, it is characterised in that: including the described in any item UV LED encapsulating structures of claim 1-5.
9. sterilizing unit as claimed in claim 8, it is characterised in that: further include bright for controlling the UV LED
The control system of degree and switch, the control system are electrically connected with the driving chip.
10. sterilizing unit as claimed in claim 9, it is characterised in that: the control system includes central processing unit, is described
Central processing unit provides the power supply of electric power, the control chip for receiving extraneous instruction and sensor, the reception central processing unit refers to
The data sink and array driver of order, the array driver are electrically connected with the driving chip.
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