CN108962761A - A kind of COF preparation method - Google Patents
A kind of COF preparation method Download PDFInfo
- Publication number
- CN108962761A CN108962761A CN201810571152.5A CN201810571152A CN108962761A CN 108962761 A CN108962761 A CN 108962761A CN 201810571152 A CN201810571152 A CN 201810571152A CN 108962761 A CN108962761 A CN 108962761A
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- Prior art keywords
- cof
- temporary base
- fexible film
- preparation
- layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- HTATZUOVCDVBPP-UHFFFAOYSA-N [Mo].[Li].[Mo] Chemical compound [Mo].[Li].[Mo] HTATZUOVCDVBPP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005452 bending Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 23
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of COF preparation methods, comprising steps of (a) provides temporary base；(b) fexible film is bonded in the upper surface of the temporary base；(c) the deposited metal layer on the fexible film；(d) etch process is exposed using LCD/TFT, will be described metal layer patterning, form metal routing layer；(e) by chip bonding on the metal routing layer；(f) temporary base is separated with fexible film, thus remove the temporary base, it is final to obtain required COF.In this way, lifting process precision may be implemented, improve degree of flexibility and bending ability, the scope of application is big, the technical effects such as at low cost.
Description
Technical field
The present invention relates to chip package field, in particular to a kind of COF preparation method.
Background technique
COF(Chip On Film) refer to chip-on-film bonding packaging, it is widely used in the field of display device.With
The fast development of electronics, communication industry, the demand of display and day increase severely, and Related product is all to be with light, thin, short, small
Development trend, this requires must have high density, small size, energy freely fitted a new generation's encapsulation technology to meet the above need
It asks.COF technology exactly rapidly develops in this context grows, and becomes the one of the driving IC of the flat-panel monitors such as LCD, PDP
Kind predominant package form, and then become the important component of these display modules.COF technology has become the following FPD
One of the main trend of the driving IC package of device.
Mainly pass through TAPE process using more COF at present to prepare, however the precision of this material technology is poor,
General single side COF Film minimum Pitch 25um, two-sided COF Film minimum Pitch 35um, such precision is more and more not
It is able to satisfy the growth requirement of the field of display device.
How to realize that precision is higher, the lower COF of cost is prepared into this field assistant officer technical problem to be solved.
Summary of the invention
The object of the present invention is to provide a kind of novel C OF preparation method, may be implemented lifting process precision, improve it is soft
Property degree and bending ability, the scope of application is big, the technical effects such as at low cost.
To achieve the above object, the technical scheme adopted by the invention is as follows:
A kind of COF preparation method is provided, the described method comprises the following steps:
(a) temporary base is provided；
(b) fexible film is bonded in the upper surface of the temporary base；
(c) the deposited metal layer on the fexible film；
(d) etch process is exposed using LCD/TFT, will be described metal layer patterning, form metal routing layer；
(e) by chip bonding on the metal routing layer；
(f) temporary base is separated with fexible film, thus remove the temporary base, it is final to obtain required COF.
Further, the step (c) includes:
(c1) first depositing insulating layer；
(c2) the deposited metal layer on the insulating layer again；
Also, before executing the step (e) further include: repeat step (c1), (c2), (d) according to pre-provisioning request number.
Further, the material of the fexible film is selected from PI, PET, TAC.
Further, the metal routing layer uses molybdenum lithium molybdenum and copper wiring.
Further, the precision of the COF is 6.5 ~ 16um IC pitch.
Further, the line-spacing of the COF is 3um.
Further, the pre-provisioning request number is 1 ~ 7.
The invention has the following advantages that COF preparation method provided by the invention, including step (a) provide temporary base；
(b) fexible film is bonded in the upper surface of the temporary base；(c) the deposited metal layer on the fexible film；(d) it uses
LCD/TFT exposes etch process, will be described metal layer patterning, forms metal routing layer；(e) by chip bonding in the metal
On routing layer；(f) temporary base is separated with fexible film, thus remove the temporary base, it is final to obtain required COF.
In this way, may be implemented: 1) existing common flexible printer circuit (flexible printed circuit film) is replaced, it can
With lifting process precision；2) new flexible thin-film material is used, can achieve that degree of flexibility is higher, bent ability is more preferably imitated
Fruit avoids the technical problem that traditional TAPE substrate hardness is big, difficulty of processing is big, yield is low；3) it can complete to existing IC's
Encapsulation, such as directly commonality is improved without special IC using current COG IC；Moreover, COG IC can be with
It is made smaller than the IC package on COF before, cost can be lower, and fineness is higher, can do closeer cabling, pliability
More preferably；4) it can be prepared into transparent process；5) effective rate of utilization of TFT processing procedure is promoted.
Detailed description of the invention
Fig. 1 is a kind of flow chart of COF preparation method provided by the invention；
Fig. 2 be another embodiment of the present invention provides COF preparation method flow chart.
Specific embodiment
The present invention will be described in detail with reference to the accompanying drawings and examples.
Embodiment one:
Fig. 1 shows a kind of flow chart of COF preparation method provided by the invention.COF system when the present embodiment is single layer cabling
Preparation Method.Specifically, the COF preparation method the following steps are included:
(a) temporary base is provided；
(b) fexible film is bonded in the upper surface of the temporary base；
(c) the deposited metal layer on the fexible film；
(d) etch process is exposed using LCD/TFT, will be described metal layer patterning, form metal routing layer；
(e) by chip bonding on the metal routing layer；
(f) temporary base is separated with fexible film, thus remove the temporary base, it is final to obtain required COF.
It is worth noting that, the present invention replaces traditional TAPE technique using LCD/TFT exposure etch process, so that finally
The precision of route is higher, and pliability is more preferable, and improves the effective rate of utilization of LCD/TFT processing procedure, reduces production cost.
Wherein, the temporary base can be glass substrate, and stiffening plate also can be used.Alternatively, after step (f), also
Including the stick carbon fiber plate on the surface of the fexible film separated with the temporary base, the stiffening plate can both increase
The intensity of COF encapsulating products so that COF encapsulating products are hardly damaged, and does not interfere the bending ability of COF encapsulating products.
Wherein, the material of the fexible film is selected from PI, PET, TAC.By being selected in numerous common flexible materials
Test, using above-mentioned three kinds of materials prepare product pliability it is higher, performance is more stable, that is, tri- kinds of materials of PI, PET, TAC with
The matching degree of new process is more preferable, preferably to prepare chip-on-film bonding packaging structure using method provided by the present application.
Wherein, the metal routing layer uses molybdenum lithium molybdenum and copper wiring.The molybdenum lithium molybdenum and copper wiring have resistivity low,
The advantages that good conductivity.
It is prepared using method provided by the present application, the precision of COF can reach 6.5 ~ 16um IC pitch；The line-spacing of COF can
Reach 3um.Compared with prior art, existing TAPE craft precision can only be 30um or more, can't do it is finer, and
Higher cost.
Embodiment two:
Fig. 2 shows another embodiment of the present invention provides COF preparation method flow chart.When the present embodiment is multilayer cabling
COF preparation method.Specifically, the COF preparation method the following steps are included:
(a) temporary base is provided；
(b) fexible film is bonded in the upper surface of the temporary base；
(c1) first depositing insulating layer；
(c2) the deposited metal layer on the insulating layer again；
(d) etch process is exposed using LCD/TFT, will be described metal layer patterning, form metal routing layer；
It repeats the above steps (c1), (c2), (d) according to pre-provisioning request number；
(e) by chip bonding on metal routing layer；
(f) temporary base is separated with fexible film, thus remove the temporary base, it is final to obtain required COF.
It is worth noting that, the LCD/TFT exposure technology in the present invention refers in LCD liquid crystal display panel manufacturing process
The manufacture craft of TFT switch on tft array substrate.The present invention replaces traditional TAPE using LCD/TFT exposure etch process
Technique, so that the precision of final route is higher, pliability is more preferable, and improves the effective rate of utilization of LCD/TFT processing procedure, drop
Low production cost.
Wherein, the temporary base can be glass substrate, and stiffening plate also can be used.Alternatively, after step (f), also
Including the stick carbon fiber plate on the surface of the fexible film separated with the temporary base, the stiffening plate can both increase
The intensity of COF encapsulating products so that COF encapsulating products are hardly damaged, and does not interfere the bending ability of COF encapsulating products.
Wherein, the material of the fexible film is selected from PI, PET, TAC.By being selected in numerous common flexible materials
Test, using above-mentioned three kinds of materials prepare product pliability it is higher, performance is more stable, that is, tri- kinds of materials of PI, PET, TAC with
The matching degree of new process is more preferable, preferably to prepare chip-on-film bonding packaging structure using method provided by the present application.
Wherein, the metal routing layer uses molybdenum lithium molybdenum and copper wiring.The molybdenum lithium molybdenum and copper wiring have resistivity low,
The advantages that good conductivity.
It is prepared using method provided by the present application, the precision of COF can reach 6.5 ~ 16um IC pitch；The line-spacing of COF can
Reach 3um.Compared with prior art, existing TAPE craft precision can only be 30um or more, can't do it is finer, and
Higher cost.
The pre-provisioning request number can arbitrarily be selected from 1 ~ 7, i.e., routing layer at most can achieve 8 layers.And it is existing
Process conditions are at most only done two layers, and the present invention substantially increases the flexibility of wiring.
Finally, it should be noted that above embodiments be only to illustrate the technical solution of the embodiment of the present invention rather than to its into
Row limitation, although the embodiment of the present invention is described in detail referring to preferred embodiment, those skilled in the art
It should be understood that the technical solution of the embodiment of the present invention can be still modified or replaced equivalently, and these are modified or wait
The range of modified technical solution disengaging technical solution of the embodiment of the present invention cannot also be made with replacement.
Claims (7)
1. a kind of COF preparation method, which comprises the following steps:
(a) temporary base is provided；
(b) fexible film is bonded in the upper surface of the temporary base；
(c) the deposited metal layer on the fexible film；
(d) etch process is exposed using LCD/TFT, will be described metal layer patterning, form metal routing layer；
(e) by chip bonding on the metal routing layer；
(f) temporary base is separated with fexible film, thus remove the temporary base, it is final to obtain required COF.
2. COF preparation method according to claim 1, which is characterized in that the step (c) includes:
(c1) first depositing insulating layer；
(c2) the deposited metal layer on the insulating layer again；
Also, before executing the step (e) further include: repeat step (c1), (c2), (d) according to pre-provisioning request number.
3. COF preparation method according to claim 1 or 2, which is characterized in that the material of the fexible film be selected from PI,
PET、TAC。
4. COF preparation method according to claim 1 or 2, which is characterized in that the metal routing layer using molybdenum lithium molybdenum and
Copper wiring.
5. COF preparation method according to claim 1 or 2, which is characterized in that the precision of the COF is 6.5 ~ 16um IC
pitch。
6. COF preparation method according to claim 1 or 2, which is characterized in that the line-spacing of the COF is 3um.
7. COF preparation method according to claim 2, which is characterized in that the pre-provisioning request number is 1 ~ 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810571152.5A CN108962761A (en) | 2018-06-05 | 2018-06-05 | A kind of COF preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810571152.5A CN108962761A (en) | 2018-06-05 | 2018-06-05 | A kind of COF preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108962761A true CN108962761A (en) | 2018-12-07 |
Family
ID=64492868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810571152.5A Pending CN108962761A (en) | 2018-06-05 | 2018-06-05 | A kind of COF preparation method |
Country Status (1)
| Country | Link |
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| CN (1) | CN108962761A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581062A (en) * | 2019-09-25 | 2019-12-17 | 江苏上达电子有限公司 | Manufacturing method of packaging substrate for improving residual copper in edge curling |
| CN110690124A (en) * | 2019-11-14 | 2020-01-14 | 江苏上达电子有限公司 | Manufacturing method of packaging substrate for improving residual copper in edge curling |
| CN111405766A (en) * | 2020-03-31 | 2020-07-10 | 珠海市泓电电子科技有限公司 | Process for COF products |
| CN111584436A (en) * | 2020-05-27 | 2020-08-25 | 上海天马微电子有限公司 | Chip on film and method for manufacturing the same |
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| CN104201283A (en) * | 2014-09-04 | 2014-12-10 | 广州新视界光电科技有限公司 | Substrate and base plate separation process, sacrificial layer and flexible display device and production process thereof |
| CN104362263A (en) * | 2014-10-31 | 2015-02-18 | 华南理工大学 | Flexible membrane liner and substrate separation process for producing flexible display device |
| CN104362077A (en) * | 2014-10-31 | 2015-02-18 | 华南理工大学 | Liner and substrate separation process and flexible display device and manufacturing process thereof |
| CN107450777A (en) * | 2017-08-15 | 2017-12-08 | 京东方科技集团股份有限公司 | A kind of touch base plate and preparation method thereof, contact panel, display device |
| US20170374741A1 (en) * | 2015-12-02 | 2017-12-28 | Honeywell Federal Manufacturing & Technologies, Llc | Rapid pcb prototyping by selective adhesion |
-
2018
- 2018-06-05 CN CN201810571152.5A patent/CN108962761A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101036422A (en) * | 2004-10-01 | 2007-09-12 | 东丽株式会社 | Long film circuit board, and production method and production device therefor |
| CN104201283A (en) * | 2014-09-04 | 2014-12-10 | 广州新视界光电科技有限公司 | Substrate and base plate separation process, sacrificial layer and flexible display device and production process thereof |
| CN104362263A (en) * | 2014-10-31 | 2015-02-18 | 华南理工大学 | Flexible membrane liner and substrate separation process for producing flexible display device |
| CN104362077A (en) * | 2014-10-31 | 2015-02-18 | 华南理工大学 | Liner and substrate separation process and flexible display device and manufacturing process thereof |
| US20170374741A1 (en) * | 2015-12-02 | 2017-12-28 | Honeywell Federal Manufacturing & Technologies, Llc | Rapid pcb prototyping by selective adhesion |
| CN107450777A (en) * | 2017-08-15 | 2017-12-08 | 京东方科技集团股份有限公司 | A kind of touch base plate and preparation method thereof, contact panel, display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581062A (en) * | 2019-09-25 | 2019-12-17 | 江苏上达电子有限公司 | Manufacturing method of packaging substrate for improving residual copper in edge curling |
| CN110690124A (en) * | 2019-11-14 | 2020-01-14 | 江苏上达电子有限公司 | Manufacturing method of packaging substrate for improving residual copper in edge curling |
| CN111405766A (en) * | 2020-03-31 | 2020-07-10 | 珠海市泓电电子科技有限公司 | Process for COF products |
| CN111584436A (en) * | 2020-05-27 | 2020-08-25 | 上海天马微电子有限公司 | Chip on film and method for manufacturing the same |
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Application publication date: 20181207 |