CN108957847A - High water oxygen rejection rate quantum dot film and the liquid crystal display for installing it - Google Patents
High water oxygen rejection rate quantum dot film and the liquid crystal display for installing it Download PDFInfo
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- CN108957847A CN108957847A CN201810688200.9A CN201810688200A CN108957847A CN 108957847 A CN108957847 A CN 108957847A CN 201810688200 A CN201810688200 A CN 201810688200A CN 108957847 A CN108957847 A CN 108957847A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
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Abstract
This application provides a kind of high water oxygen rejection rate quantum dot film and the liquid crystal displays for installing it.The high water oxygen rejection rate quantum dot film includes quantum dot layer, first base material and the second substrate, and the quantum dot layer is arranged among the first base material and the second substrate.The liquid crystal display includes light guide plate and above-mentioned high water oxygen rejection rate quantum dot film, and the high water oxygen rejection rate quantum dot film is arranged on the light guide plate.In the embodiment of the present application, high water oxygen rejection rate quantum dot film is formed by the way of quantum dot layer being arranged among first base material and the second substrate, structure is simple, and manufacture craft is simply to solve the technical problem of high water oxygen rejection rate quantum dot membrane structure complexity in the prior art.
Description
Technical field
This application involves optical film thin film technique fields, and in particular to a kind of high water oxygen rejection rate quantum dot film and installs it
Liquid crystal display.
Background technique
The nuclear structure of quantum dot liquid crystal display is quantum dot backlight source module, and common mode is to obstruct high water oxygen
Rate quantum dot film is placed on light guide plate or diffuser plate, generates high colour gamut white light by blue-ray LED excitation.
Current high water oxygen rejection rate quantum dot film mostly uses " sandwich " structure, i.e. quanta point material is coated on two layers of water oxygen
High water oxygen rejection rate quantum dot film is formed among barrier film, water oxygen barrier film is to be formed in PET base material using modes such as sputterings
One layer of fine and close coating reduces the permeability of steam and oxygen, prevents steam and oxygen from permeating to enter that quanta point material is caused to send out
Light efficiency degradation, to improve the service life of high water oxygen rejection rate quantum dot film.However, water oxygen barrier film takes magnetic control more
The modes such as sputtering make, generally require make it is several layers of to ten it is several layers of can form fine and close water oxygen barrier layers, manufacturing process is multiple
Miscellaneous, the manufacturing process so as to cause high water oxygen rejection rate quantum dot film is complex and costly.
Therefore, to overcome the problems, such as that existing product exists, the high water oxygen that a kind of structure is simple, without water oxygen barrier film is provided
Rejection rate quantum dot film becomes technical problem urgently to be resolved.
Summary of the invention
The main purpose of the application is to provide a kind of high water oxygen rejection rate quantum dot film and installs its liquid crystal display,
To solve the technical problem of high water oxygen rejection rate quantum dot membrane structure complexity in the prior art.
To achieve the goals above, according to the one aspect of the application, a kind of high water oxygen rejection rate quantum dot film is provided.
The high water oxygen rejection rate quantum dot film includes quantum dot layer, first base material and the second substrate, and the quantum dot layer is set
It sets among the first base material and the second substrate.
Further, the quantum dot layer material is quantum dot ink.
Further, the raw material components of the quantum dot ink include red quantum dot material, green quanta point material, UV
Performed polymer, UV monomer, coupling agent, light diffusing agent and levelling agent.
Further, the quantum dot ink includes the raw material components of following portions by weight: 0.4~0.7 part of feux rouges amount
Son point powder, 1.3~1.6 parts of green light quantum point powder, 82~92 parts of UV performed polymer, 4~10 parts of UV monomer, 0.5~
2.5 parts of coupling agent, 0.5~2.5 part of light diffusing agent and 0.5~2.5 part of levelling agent.
Further, the UV performed polymer is acrylate prepolymer body, polyurethane acrylate prepolymer, epoxy acrylic
At least one of ester performed polymer and modification acrylate performed polymer.
Further, the UV monomer is at least one of acrylate monomer and modified acroleic acid ester monomer.
Further, the coupling agent includes silane coupling agent, titanate coupling agent, aluminate coupling agent or rare earth coupling
Agent.
Further, the thickness of the quantum dot layer is between 20um~200um.
Further, the first base material and/or the second substrate material be polyethylene terephthalate, polyimides,
Polycarbonate, polymethacrylates, optical material COP or polypropylene.
To achieve the goals above, according to the another aspect of the application, a kind of liquid crystal display is provided.
The liquid crystal display includes light guide plate and above-mentioned high water oxygen rejection rate quantum dot film, the high water oxygen rejection rate amount
Son point film is arranged on the light guide plate.
In the embodiment of the present application, high water oxygen rejection rate quantum dot film be using by quantum dot layer setting in first base material and
What the mode among the second substrate was formed, structure is simple, and manufacture craft is simple, to solve high water oxygen barrier in the prior art
The technical problem of rate quantum dot membrane structure complexity.
Detailed description of the invention
The attached drawing constituted part of this application is used to provide further understanding of the present application, so that the application's is other
Feature, objects and advantages become more apparent upon.The illustrative examples attached drawing and its explanation of the application is for explaining the application, not
Constitute the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the sectional view of high water oxygen rejection rate quantum dot film in the embodiment of the present application;
Fig. 2 is that high water oxygen rejection rate quantum dot film is mounted on the sectional view on light guide plate in the embodiment of the present application.
In figure:
1, first base material;2, the second substrate;3, quantum dot layer;4, light guide plate.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, below in conjunction in the embodiment of the present application
Attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is only
The embodiment of the application a part, instead of all the embodiments.Based on the embodiment in the application, ordinary skill people
Member's every other embodiment obtained without making creative work, all should belong to the model of the application protection
It encloses.
It should be noted that the description and claims of this application and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to embodiments herein described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
In this application, term " on ", "lower", " in " etc. instructions orientation or positional relationship be side based on the figure
Position or positional relationship.These terms are not intended to limit indicated primarily to better describe the application and embodiment
Device, element or component must have particular orientation, or be constructed and operated with particular orientation.
Also, above-mentioned part term is other than it can be used to indicate that orientation or positional relationship, it is also possible to for indicating it
His meaning, such as term " on " also are likely used for indicating certain relations of dependence or connection relationship in some cases.For ability
For the those of ordinary skill of domain, the concrete meaning of these terms in this application can be understood as the case may be.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
As shown in Figure 1, the high water oxygen rejection rate quantum dot film includes quantum dot layer 3, first base material 1 and the second substrate 2, amount
Son point layer 3 is arranged among first base material 1 and the second substrate 2.
In above-described embodiment, 3 Tu of quantum dot layer is overlayed in first base material 1, then on quantum dot layer 3 with first base material
The second substrate 2 is arranged in 1 opposite side, to form high water oxygen rejection rate quantum dot film, manufacturing process is simple, and does not need
Using water oxygen barrier film, production cost is reduced.
Preferably, 3 material of quantum dot layer is quantum dot ink, and quantum dot ink includes red quantum dot material, green amount
Son point material, UV performed polymer, UV monomer, coupling agent, light diffusing agent and levelling agent.Quantum dot ink is to prepare high water oxygen rejection rate
One of the critical material of quantum dot film, by red quantum dot material, green quanta point material, UV performed polymer, UV monomer, coupling
After agent, light diffusing agent and levelling agent are configured to quantum dot ink, quantum dot ink Tu is applied in the first base by the way of coating
On material 1, due to being used cooperatively for UV performed polymer and coupling agent, so that quantum dot powder and substrate combine after quantum dot ink solidification
Power enhancing, can effectively completely cut off water and oxygen with quantum dot layer 3, improve the water resistance of high water oxygen rejection rate quantum dot film with
Oxidation resistant ability, to extend the service life of high water oxygen rejection rate quantum dot film.
Preferably, quantum dot ink includes the raw material components of following portions by weight: 0.4~0.7 part of red light quantum point powder
Body, 1.3~1.6 parts of green light quantum point powder, 82~92 parts of UV performed polymer, 4~10 parts of UV monomer, 0.5~2.5 part
Coupling agent, 0.5~2.5 part of light diffusing agent and 0.5~2.5 part of levelling agent.
Preferably, the UV performed polymer is acrylate prepolymer body, polyurethane acrylate prepolymer, epoxy acrylate
At least one of performed polymer and modification acrylate performed polymer.It is pre- to can be understood as can be used alone one of above-mentioned UV
Aggressiveness is also possible to be used in mixed way the above-mentioned UV performed polymer of two of them or a variety of above-mentioned UV performed polymers, and polyurethane is such as used alone
Acrylate prepolymer body is used in mixed way polyurethane acrylate prepolymer and epoxy FRP pipe, is used in mixed way propylene
Acid esters performed polymer, polyurethane acrylate prepolymer and epoxy FRP pipe, etc. can be selected according to actual needs.
UV performed polymer has the preferable transparency, bonding force and weatherability, therefore the use of UV performed polymer improves water oxygen obstructing capacity,
3 effective protection of quantum dot layer can be got up, extend the service life of high water oxygen rejection rate quantum dot film.
Preferably, UV monomer is at least one of acrylate monomer and modified acroleic acid ester monomer, it can be understood as
Can be used alone a kind of above-mentioned UV monomer, can also be used in mixed way above-mentioned a variety of UV monomers, such as be used alone one of modified
Acrylate monomer is used in mixed way acrylate monomer and one of modified acroleic acid ester monomer, is used in mixed way two kinds of modifications
Acrylate monomer, etc. can be selected according to actual needs.UV monomer mainly plays bonding, can be point not of the same race
Son is crosslinked together, improves the cementability of quantum dot layer 3.
Preferably, coupling agent is silane coupling agent, titanate coupling agent, aluminate coupling agent or rare-earth coupling agent, coupling
Agent mainly plays coupling, can be in silane coupling agent, titanate coupling agent, aluminate coupling agent or rare-earth coupling agent
Any one, can select according to actual needs.
Preferably, the thickness of quantum dot layer 3 is between 20um~150um, when quantum dot layer 3 thickness 20um~
When between 150um, quantum dot layer 3 can be secured and be evenly connected in first base material 1, not easily to fall off, improves quantum dot
The stability of layer 3, and when the thickness of quantum dot layer 3 is between 20um~150um, quantum dot ink can be by edge blue light
Sorption enhanced is white light, i.e., blue light will not have preferable sorption enhanced rate from edge leakage, improves the aobvious of liquid crystal display
Show effect.
Optionally, first base material 1 and/or 2 material of the second substrate are polyethylene terephthalate (PET), polyimides
(PI), polycarbonate (PC), polymethacrylates (PMMA), optical material COP or polypropylene (PP).PET,PI,PC,
PMMA, COP or PP are transparent material, and gas and vapor permeability are low, existing excellent choke and aqueous energy.Such as
PET is the polymer of milky or light yellow highly crystalline, smooth surface and it is glossy, transparency is high, ultraviolet light can be stopped,
Nontoxic, against weather, chemical proof stability are good, and gas and vapor permeability are low, existing excellent resistance gas and water, oil and
Peculiar smell performance.
In some embodiments, first base material 1 and the second substrate 2 are the same material in above-mentioned material.
In some embodiments, first base material 1 and the second substrate 2 are different above-mentioned materials.
Preferably, first base material 1 and the second substrate 2 are the same material in above-mentioned material, and the of same material
One substrate 1 and 2 structure of the second substrate are simple, thus manufacture craft is simple.
Part is carried out to the embodiment of high water oxygen rejection rate quantum dot film preparation process described herein below to enumerate:
Embodiment 1:
The preparation process of high water oxygen rejection rate quantum dot film, specifically includes the following steps:
(1) raw material components of quantum dot ink: 0.4 part of red light quantum point material, 1.6 parts of green light quantum point material are weighed
Material, 87.5 parts of acrylate prepolymer body, 9 parts of acrylate, 0.5 part of titanate coupling agent, 0.5 part of silica and
0.5 part of alkyl-modified organosiloxane.
(2) it by acrylate prepolymer body and crylic acid ester mixture, is stirred 10 minutes, is formed with 2000 revs/min of speed
Mixture;Then red light quantum point material is added in the mixture of above process formation, is stirred with 1500 revs/min of speed
It mixes 20 minutes;Green quanta point material is added to later in the mixture of above process formation, with 1500 revs/min of speed
Stirring 20 minutes;Titanate coupling agent, silica and alkyl-modified organosiloxane are finally added separately to the above process
It in the mixture of formation, is stirred 60 minutes with 1000 revs/min of speed, forms quantum dot ink.
(3) quantum dot ink is evenly distributed in polyethylene terephthalate by the way of Slot-die coating,
Form quantum dot layer.Slit extrusion pressing type coating (Slot-die coating) is a kind of high-precision coating method, quantum dot ink by
Memory is sent at nozzle by feeding pipe, and sprays quantum dot ink by nozzle, to be transferred to the base of coating
On material.The range of Slot-die coating is freely adjustable, will not generate spot phenomenon, has the advantages that precision is high, effect is good.
(4) side opposite with polyethylene terephthalate on quantum dot layer covers polyethylene terephthalate,
Then UV irradiation is carried out to two layers of polyethylene terephthalate and quantum dot layer, forms finished product after quantum dot ink solidification.
Embodiment 2:
The preparation process of high water oxygen rejection rate quantum dot film, specifically includes the following steps:
(1) raw material components of quantum dot ink: 0.5 part of red light quantum point material, 1.5 parts of green light quantum point material are weighed
Material, 92 parts of polyurethane acrylate prepolymer, 4 parts of neopentylglycol diacrylate, 1 part of aluminate coupling agent, 0.5 part
Polymethyl methacrylate and 0.5 part of organic silicon modified by polyether oxygen alkane.
(2) polyurethane acrylate prepolymer and neopentylglycol diacrylate are mixed, with 2000 revs/min of speed
Stirring 20 minutes forms mixture;Then red light quantum point material is added in the mixture of above process formation, with 2000
Rev/min speed stir 10 minutes;Green quanta point material is added to later in the mixture of above process formation, with
2000 revs/min of speed stirs 10 minutes;Finally by aluminate coupling agent, polymethyl methacrylate and polyether-modified organic
Siloxanes is added separately in the mixture of above process formation, is stirred 60 minutes with 1000 revs/min of speed, and quantum is formed
Point ink.
(3) quantum dot ink is evenly distributed in polyethylene terephthalate by the way of intaglio printing, is formed
Quantum dot layer.
(4) side opposite with polyethylene terephthalate on quantum dot layer covers polyimides, then to poly- pair
Polyethylene terephthalate, quantum dot layer and polyimides carry out UV irradiation, form finished product after quantum dot ink solidification.
Embodiment 3:
The preparation process of high water oxygen rejection rate quantum dot film, specifically includes the following steps:
(1) raw material components of quantum dot ink: 0.5 part of red light quantum point material, 1.5 parts of green light quantum point material are weighed
Material, 90 parts of epoxy FRP pipe, 6 parts of trimethylolpropane trimethacrylate, 1 part of rare-earth coupling agent, 1 part
Polymethyl methacrylate and 1 part of dimethyl silicone polymer.
(2) epoxy FRP pipe and trimethylolpropane trimethacrylate are mixed, with 1000 revs/min of speed
Degree stirring 60 minutes, forms mixture;Then red light quantum point material is added in the mixture of above process formation, with
1500 revs/min of speed stirs 30 minutes;Green quanta point material is added to later in the mixture of above process formation,
It is stirred 20 minutes with 1500 revs/min of speed;Finally by rare-earth coupling agent, polymethyl methacrylate and polydimethylsiloxanes
Alkane is added separately in the mixture of above process formation, is stirred 10 minutes with 2000 revs/min of speed, and quantum dot oil is formed
Ink.
(3) quantum dot ink is evenly distributed on polycarbonate by the way of intaglio printing, forms quantum dot layer.
(4) side opposite with polycarbonate on quantum dot layer covers polyimides, then to polycarbonate, quantum dot
Layer and polyimides carry out UV irradiation, form finished product after quantum dot ink solidification.
Embodiment 4:
The preparation process of high water oxygen rejection rate quantum dot film, specifically includes the following steps:
(1) raw material components of quantum dot ink: 0.6 part of red light quantum point material, 1.4 parts of green light quantum point material are weighed
Material, 84 parts of polyurethane acrylate prepolymer and epoxy FRP pipe, 8 parts of pentaerythritol triacrylate and three
Hydroxymethyl-propane triacrylate, 2 parts of aluminate coupling agent, 2 parts of silica and 2 parts of dimethyl silicone polymer.
(2) by polyurethane acrylate prepolymer, epoxy FRP pipe, pentaerythritol triacrylate and three hydroxyls
Propane tri mixing, is stirred 50 minutes with 1000 revs/min of speed, forms mixture;Then by feux rouges amount
Son point material is added in the mixture of above process formation, is stirred 30 minutes with 1500 revs/min of speed;It later will be green
Quanta point material is added in the mixture of above process formation, is stirred 60 minutes with 1000 revs/min of speed;Finally by aluminium
Acid esters coupling agent, silica and dimethyl silicone polymer be added separately to the above process formation mixture in, with 2000 turns/
The speed of minute stirs 10 minutes, forms quantum dot ink.
(3) quantum dot ink is evenly distributed on polymethacrylates by the way of Slot-die coating, is formed
Quantum dot layer.
(4) side opposite with polymethacrylates on quantum dot layer covers polymethacrylates, then to amount
Son point layer and two layers of polymethacrylates carry out UV irradiation, form finished product after quantum dot ink solidification.
Embodiment 5:
The preparation process of high water oxygen rejection rate quantum dot film, specifically includes the following steps:
(1) raw material components of quantum dot ink: 0.6 part of red light quantum point material, 1.4 parts of green light quantum point material are weighed
Material, 82 parts of acrylate prepolymer body, polyurethane acrylate prepolymer and epoxy FRP pipe, 10 parts of three hydroxyl first
Base propane triacrylate, acrylate and neopentylglycol diacrylate monomer, 2.5 parts of titanate coupling agent, 2.5 parts
Polystyrene and 1 part of polyester modified organic siloxane.
(2) by acrylate prepolymer body, polyurethane acrylate prepolymer, epoxy FRP pipe, trihydroxy methyl
Propane triacrylate, acrylate and the mixing of neopentylglycol diacrylate monomer, stir 60 with 1500 revs/min of speed
Minute, form mixture;Then red light quantum point material is added in the mixture of above process formation, with 1000 revs/min
The speed of clock stirs 40 minutes;Later by green quanta point material be added to the above process formation mixture in, with 1000 turns/
The speed of minute stirs 40 minutes;Finally titanate coupling agent, polystyrene and polyester modified organic siloxane are separately added into
It in the mixture formed to the above process, is stirred 10 minutes with 2000 revs/min of speed, forms quantum dot ink.
(3) quantum dot ink is evenly distributed on optical material COP by the way of Slot-die coating, forms quantum
Point layer.
(4) side opposite with optical material COP covers polycarbonate on quantum dot layer, then to optical material COP,
Quantum dot layer and polycarbonate carry out UV irradiation, form finished product after quantum dot ink solidification.
Embodiment 6:
The preparation process of high water oxygen rejection rate quantum dot film, specifically includes the following steps:
(1) raw material components of quantum dot ink: 0.7 part of red light quantum point material, 1.3 parts of green light quantum point material are weighed
Material, 85.5 parts of epoxy FRP pipe, 5 parts of pentaerythritol triacrylate, 2.5 parts of aluminate coupling agent, 2.5
The organosilicon and 2.5 parts of dimethyl silicone polymer of part.
(2) epoxy FRP pipe and pentaerythritol triacrylate are mixed, is stirred with 1500 revs/min of speed
It mixes 30 minutes, forms mixture;Then red light quantum point material is added in the mixture of above process formation, with 1500
Rev/min speed stir 20 minutes;Green quanta point material is added to later in the mixture of above process formation, with
2000 revs/min of speed stirs 10 minutes;Finally aluminate coupling agent, organosilicon and dimethyl silicone polymer are separately added into
It in the mixture formed to the above process, is stirred 60 minutes with 1000 revs/min of speed, forms quantum dot ink.
(3) quantum dot ink is evenly distributed on polypropylene by the way of intaglio printing, forms quantum dot layer.
(4) side opposite with polypropylene covers polyethylene terephthalate on quantum dot layer, then to polypropylene,
Quantum dot layer and polyethylene terephthalate carry out UV irradiation, form finished product after quantum dot ink solidification.
High water oxygen rejection rate quantum dot film is prepared using the above method, structure is simple, compared with the existing technology in PET base
One layer of fine and close water oxygen barrier film is formed using modes such as sputterings on material, manufacture craft is simple and reduces production cost, and
There is stronger water resistance and oxidation resistance using the high water oxygen rejection rate quantum dot film that the above method is prepared.
Implementation result in order to better illustrate the present invention is made using the manufacturing cost of commercially available high water oxygen rejection rate quantum dot film
For contrast groups, comparing result is as shown in table 1:
1 experimental group of table and control group cost of goods manufactured decreasing value
Group | Reduced manufacturing cost (member) |
Control group | - |
Embodiment 1 | 80 |
Embodiment 2 | 76 |
Embodiment 3 | 73 |
Embodiment 4 | 69 |
Embodiment 5 | 60 |
Embodiment 6 | 75 |
As can be seen from Table 1, high water oxygen rejection rate quantum dot film is prepared using the preparation method in embodiment 1 to 6, it can
Manufacturing cost is reduced, raw material are saved.
The liquid crystal display includes light guide plate 4 and above-mentioned high water oxygen rejection rate quantum dot film, high water oxygen rejection rate quantum
Point film is arranged on light guide plate 4.
In above-described embodiment, quantum dot liquid crystal display is needed using blue-ray LED lamp bar, and blue-ray LED lamp bar passes through leaded light
Uniform blue light is formed after plate 4, after high water oxygen rejection rate quantum dot film is arranged on light guide plate 4, blue light is hindered through high water oxygen
Form high colour gamut white light after rate quantum dot film, and edge is revealed without blue light, i.e., high water oxygen rejection rate quantum dot film is by edge
Blue light absorption is converted into white light, improves the display effect of liquid crystal display.
It can be seen from the above description that the application realizes following technical effect: high water oxygen rejection rate quantum dot film
Simple production process, reduce production cost, and formed high water oxygen rejection rate quantum dot film quantum dot ink have height
Water resistance and oxidation resistant ability, stability is strong, in a liquid crystal display by the application of high water oxygen rejection rate quantum dot film, light guide plate
Edge without blue light reveal, improve the display effect of liquid crystal display.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of high water oxygen rejection rate quantum dot film, which is characterized in that including quantum dot layer (3), first base material (1) and the second base
Material (2), quantum dot layer (3) setting are intermediate in the first base material (1) and the second substrate (2).
2. high water oxygen rejection rate quantum dot film according to claim 1, which is characterized in that quantum dot layer (3) material
For quantum dot ink.
3. high water oxygen rejection rate quantum dot film according to claim 2, which is characterized in that the raw material of the quantum dot ink
Component includes red quantum dot material, green quanta point material, UV performed polymer, UV monomer, coupling agent, light diffusing agent and levelling
Agent.
4. high water oxygen rejection rate quantum dot film according to claim 2, which is characterized in that under the quantum dot ink includes
State the raw material components of parts by weight: 0.4~0.7 part of red light quantum point powder, 1.3~1.6 parts of green light quantum point powder, 82
~92 parts of UV performed polymer, 4~10 parts of UV monomer, 0.5~2.5 part of coupling agent, 0.5~2.5 part of light diffusing agent and 0.5
~2.5 parts of levelling agent.
5. high water oxygen rejection rate quantum dot film according to claim 2, which is characterized in that the UV performed polymer is acrylic acid
In ester performed polymer, polyurethane acrylate prepolymer, epoxy FRP pipe and modification acrylate performed polymer at least
It is a kind of.
6. high water oxygen rejection rate quantum dot film according to claim 2, which is characterized in that the UV monomer is acrylate
At least one of monomer and modified acroleic acid ester monomer.
7. high water oxygen rejection rate quantum dot film according to claim 2, which is characterized in that the coupling agent includes silane idol
Join agent, titanate coupling agent, aluminate coupling agent or rare-earth coupling agent.
8. high water oxygen rejection rate quantum dot film according to claim 1, which is characterized in that the thickness of the quantum dot layer (3)
Degree is between 20um~200um.
9. high water oxygen rejection rate quantum dot film according to claim 1, which is characterized in that the first base material (1) and/or
Second substrate (2) material is polyethylene terephthalate, polyimides, polycarbonate, polymethacrylates, optical material
COP or polypropylene.
10. a kind of liquid crystal display, which is characterized in that including light guide plate (4) and Gao Shui according to any one of claims 1 to 9
Oxygen rejection rate quantum dot film, the high water oxygen rejection rate quantum dot film are arranged on the light guide plate (4).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810688200.9A CN108957847A (en) | 2018-06-28 | 2018-06-28 | High water oxygen rejection rate quantum dot film and the liquid crystal display for installing it |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810688200.9A CN108957847A (en) | 2018-06-28 | 2018-06-28 | High water oxygen rejection rate quantum dot film and the liquid crystal display for installing it |
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CN108957847A true CN108957847A (en) | 2018-12-07 |
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WO2021137830A1 (en) * | 2019-12-31 | 2021-07-08 | Bilkent Universitesi (Unam) Ulusal Nanoteknoloji Arastirma Merkezi | A method for enhancing color richness of displays |
CN114434839A (en) * | 2021-12-30 | 2022-05-06 | 合肥福纳科技有限公司 | Quantum dot film without barrier film and preparation method and application thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN114434839A (en) * | 2021-12-30 | 2022-05-06 | 合肥福纳科技有限公司 | Quantum dot film without barrier film and preparation method and application thereof |
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