CN108922948B - Light-emitting diode structure and manufacturing method thereof - Google Patents
Light-emitting diode structure and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 148
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims description 29
- 239000002077 nanosphere Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 20
- 239000003153 chemical reaction reagent Substances 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 3
- 239000008188 pellet Substances 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000009286 beneficial effect Effects 0.000 abstract description 10
- 238000000605 extraction Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 14
- 239000002061 nanopillar Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
The invention provides a light-emitting diode structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The light-emitting diode structure comprises a substrate and a buffer layer positioned on one side of the substrate; a plurality of nitride support columns arranged at intervals and positioned on one side of the buffer layer away from the substrate; and a light emitting layer formed based on epitaxial growth of the nitride support pillars. The light-emitting diode structure and the manufacturing method thereof provided by the invention have the advantages of inhibiting the formation of cracks, improving the crystal quality of N-type AlGaN and being beneficial to improving the light extraction efficiency of the device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a light-emitting diode structure and a manufacturing method thereof.
Background
In recent years, deep ultraviolet light emitting diodes have been receiving more and more attention for their application in sterilization, non-line-of-sight communication, special gas detection, and the like. AlN single crystal is the most ideal substrate material for preparing deep-ultraviolet light emitting diodes from the standpoint of lattice matching and thermal expansion coefficient matching, however, alN single crystal substrates still suffer from the key problems of high cost, small size, low transmittance, and the like at this stage. Therefore, the regrowth of subsequent device structures after deposition of high quality AlN thick films on sapphire substrates is the dominant technological route.
The existing technical route has a plurality of problems: 1. in order to improve crystal quality and ensure current expansion characteristics, alN and n-type AlGaN generally need to be grown to a thickness of 2-3 microns, and in the growth and cooling processes, surface cracking problems are caused by larger lattice mismatch and thermal mismatch; al atoms have weak migration ability, and a temperature of at least 1250 ℃ is required to realize high-quality AlN, so that high requirements are put on a reaction chamber and a heating wire; 3. thicker AlN and AlGaN structures can influence the emergent light of the quantum well region, and the light extraction efficiency is reduced.
In view of this, how to solve the above problems is an important point of attention of those skilled in the art.
Disclosure of Invention
Therefore, the present invention is directed to a light emitting diode structure, which solves the problems of easy cracking and low light extraction efficiency of the light emitting diode in the prior art.
Another objective of the present invention is to provide a method for manufacturing a light emitting diode structure, so as to solve the problems of easy cracking and low light extraction efficiency of the light emitting diode in the prior art.
In order to achieve the above object, the technical scheme adopted by the embodiment of the invention is as follows:
in one aspect, an embodiment of the present invention provides a light emitting diode structure, including:
a substrate;
a buffer layer positioned at one side of the substrate;
a plurality of nitride support columns arranged at intervals and positioned on one side of the buffer layer away from the substrate; and
and forming a light-emitting layer based on the epitaxial growth of the nitride support column.
Further, the light emitting layer includes:
an N-type layer formed based on the nitride support column growth, wherein a plurality of concave parts are formed on the N-type layer, and are recessed from one side close to the nitride support column;
a quantum well layer formed based on the growth of the side of the N-type layer away from the nitride support post;
an electron blocking layer formed based on the growth of the side of the quantum well layer away from the N-type layer; and
and a P-type layer is formed on the basis of the growth of one side of the electron blocking layer away from the quantum well layer.
Further, the light emitting layer includes:
forming an N-type layer based on the nitride support column growth, wherein a plurality of concave parts are formed on the N-type layer, and are concave from one side close to the nitride support column;
a quantum well layer formed based on the growth of the side of the N-type layer away from the nitride support post; and
and growing a formed P-type layer on the basis of one side of the quantum well layer away from the N-type layer.
Further, the plurality of nitride support columns are arranged at intervals.
Further, the plurality of nitride support columns are arranged at equal intervals, and the interval between every two adjacent nitride support columns is 200-800nm.
Further, a plurality of through grooves penetrating through the buffer layer are formed in the buffer layer, so that the buffer layer forms a plurality of parts corresponding to the nitride support columns respectively.
In another aspect, an embodiment of the present invention provides a method for manufacturing a light emitting diode structure, where the method includes:
forming a buffer layer based on one side of the substrate;
forming an undoped nitride layer based on one side of the buffer layer away from the substrate;
etching the undoped nitride layer from one side of the undoped nitride far away from the buffer layer by using a mask to form a plurality of nitride support columns which are arranged at intervals;
and forming a light-emitting layer based on epitaxial growth of one side of the nitride support column away from the buffer layer.
Further, the step of etching the undoped nitride layer from a side of the undoped nitride layer away from the buffer layer by using a mask to form a plurality of nitride spacers arranged at intervals includes:
mixing the nanospheres with an organic solution to obtain a mixed reagent; wherein, 10 percent of nanometer pellets with the weight/volume ratio and the organic solvent are mixed and stirred according to the volume ratio of 2:3;
the mixed reagent is dripped on the surface of one side of the undoped nitride layer far away from the buffer layer, so as to form a monoatomic layer nanosphere mask;
and etching from the undoped nitride layer along the gaps of the nanosphere mask until the substrate surface is etched through to form a plurality of nitride support columns.
Further, the step of etching the undoped nitride layer from a side of the undoped nitride layer away from the buffer layer by using a mask, and forming a plurality of nitride spacers arranged at intervals includes:
mixing the nanospheres with an organic solution to obtain a mixed reagent;
the mixed reagent is dripped on the surface of one side of the undoped nitride layer far away from the buffer layer, so as to form a monoatomic layer nanosphere mask;
and etching from the undoped nitride layer along the gaps of the nanosphere mask until the undoped nitride layer is etched through to the surface of the buffer layer on the side far away from the substrate or the undoped nitride layer is etched through to the inside of the buffer layer, so as to form a plurality of nitride support columns.
Further, the step of forming the light emitting layer based on epitaxial growth of the side of the nitride support pillar away from the buffer layer includes:
forming an N-type layer based on the nitride support column growth, wherein a plurality of concave parts are formed on the N-type layer, and are concave from one side close to the nitride support column; the molar ratio of V/III element of the N-type layer is 400-1500, the thickness is 1-3 micrometers, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃;
forming a quantum well layer based on the growth of the side of the N-type layer away from the nitride support column; wherein the molar ratio of V/III element of the quantum well layer is 400-1500, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃;
forming an electron blocking layer based on the growth of one side of the quantum well layer away from the N-type layer; wherein the molar ratio of V/III element of the electron blocking layer is 800-2000, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃;
forming a P-type layer based on the growth of one side of the electron blocking layer away from the quantum well layer; wherein the molar ratio of V/III element of the P-type layer is 800-2000, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a light-emitting diode structure and a manufacturing method thereof, wherein the light-emitting diode structure comprises a substrate and a buffer layer positioned at one side of the substrate; a plurality of nitride support columns arranged at intervals and positioned on one side of the buffer layer away from the substrate; and a light emitting layer formed based on epitaxial growth of the nitride support pillars. In the first aspect, the light-emitting diode structure provided by the invention effectively reduces the contact area with the sapphire substrate, and is beneficial to release of strain, so that the formation of cracks can be inhibited in the epitaxial and temperature raising and lowering processes. In the second aspect, the light-emitting diode structure provided by the invention does not need a high-quality buffer layer, the occupied area of dislocation can be reduced by utilizing the nitride support column, the dislocation can be reduced by bending effect in the folding process of the nitride support column, and the annihilation probability of the dislocation of the nitride support column with high density is very high; meanwhile, the smaller nitride support column interval can ensure that the orientation difference between different crystal columns is very small when the nitride support columns are folded, inhibit the generation of new dislocation and effectively improve the crystal quality of N-type AlGaN. In the third aspect, the air holes between the nano-pillars are beneficial to the emergent light of the quantum well layer, and are beneficial to improving the light extraction efficiency of the device.
In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a cross-sectional view of a first light emitting diode structure provided by an embodiment of the present invention.
Fig. 2 shows a schematic cross-sectional view of a substrate, a buffer layer and an undoped nitride layer provided by an embodiment of the present invention.
Fig. 3 is a schematic diagram of a structure of a nitride support column and a substrate according to an embodiment of the present invention.
Fig. 4 is a cross-sectional view of a second light emitting diode structure according to an embodiment of the present invention.
Fig. 5 is a cross-sectional view of a third led structure according to an embodiment of the present invention.
Fig. 6 is a flowchart of a method for manufacturing a light emitting diode structure according to an embodiment of the present invention.
Icon: a 100-light emitting diode structure; 110-a substrate; 120-nitride support posts; 130-N type layer; 131-a depression; 140-quantum well layers; 150-an electron blocking layer; 160-P-type layer; 170-a light emitting layer; 180-a buffer layer; 190-undoped nitride layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present invention, it should also be noted that, unless explicitly specified and defined otherwise, the terms "connected", "connected" and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art. Some embodiments of the present invention are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
First embodiment
Referring to fig. 1, an embodiment of the present invention provides a light emitting diode structure 100,
the light emitting diode structure 100 includes a substrate 110, a buffer layer 180 located on one side of the substrate 110, a plurality of nitride support columns 120 located on one side of the buffer layer 180 away from the substrate 110 and spaced apart from each other, and a light emitting layer 170 formed by epitaxial growth based on the nitride support columns 120.
Specifically, in the present embodiment, the substrate 110 is a sapphire substrate 110, however, in other embodiments, the substrate 110 may be made of other materials, such as a silicon substrate 110, and the present embodiment is not limited in any way.
Further, the AlN buffer layer 180 is formed by using an AlN buffer layer 180, and the AlN buffer layer 180 can be grown on the substrate 110 by using an epitaxial growth technique, for example, the AlN buffer layer 180 is grown by using a metal-organic compound vapor phase epitaxy method, although other epitaxial growth methods may be used in other embodiments. Meanwhile, it should be noted that the buffer layer 180 provided in this embodiment is an AlN buffer layer 180, but in other embodiments, other nitride or phosphide buffer layers 180 may be used, which is not limited in this embodiment.
It should be further noted that, in order to make the performance of the overall led structure better, the AlN buffer layer 180 includes a first AlN buffer layer 180 and a second AlN buffer layer 180, where the first AlN buffer layer 180 is deposited on the substrate 110 at 20-30nm, its epitaxial growth condition is that the molar ratio of V/III element is 150-500, the pressure is 50-75mbar, the temperature is about 900-950 degrees, and then the second AlN buffer layer 180 is continuously grown on the first AlN buffer layer 180, where the epitaxial growth condition is that the thickness is 200-500nm, the molar ratio of V/III is 200-1000, the pressure is 50-75mbar, and the temperature is 1050-1150 degrees.
Further, a plurality of nitride support columns 120 are fabricated at intervals on the side of the buffer layer 180 away from the substrate 110, referring to fig. 2, in this embodiment, an undoped nitride layer 190 is epitaxially grown on the side of the buffer layer 180 away from the substrate 110, and then etching is performed by using a mask, so as to fabricate the nitride support columns 120, as shown in fig. 3.
It should be noted that, referring to fig. 4, as an implementation manner of the embodiment, during the etching process, the etching depth is only etched to the surface of the buffer layer 180, so that the nitride support pillars 120 are formed only in the undoped nitride layer 190.
As a second implementation manner of this embodiment, referring to fig. 5, in the etching process, the etching depth is only etched into the buffer layer 180, so that a plurality of grooves are formed on the buffer layer 180, and the buffer layer 180 is formed with a plurality of portions corresponding to the plurality of nitride support columns 120, that is, the nitride buffer layer 180 is composed of the undoped nitride layer 190 and a portion of the buffer layer 180.
As a third implementation manner of this embodiment, referring to fig. 1, in the etching process, the etching depth is only that of penetrating through the undoped nitride layer 190 and the buffer layer 180, so that a plurality of through grooves penetrating through the buffer layer 180 are formed on the buffer layer 180, and the buffer layer 180 forms a plurality of portions corresponding to the plurality of nitride support columns 120 respectively.
Meanwhile, in the present embodiment, a plurality of nitride support columns 120 are disposed at intervals from each other. Further, the plurality of nitride support columns 120 are arranged at equal intervals from each other, and the interval between two adjacent nitride support columns 120 is 200-800nm. Meanwhile, in the present embodiment, the nitride support columns 120 exist in the form of nano columns. And, the undoped nitride layer 190 includes an undoped AlGaN layer, wherein an epitaxial growth condition of the undoped nitride layer 190 is to grow 300-800nm undoped AlxGa1-xN (0.5 < x < 1), with a V/III element molar ratio of 400-1500, a pressure of 50-150mbar, and a growth temperature of 1050-1150 degrees on the buffer layer 180. Of course, in other embodiments, the undoped nitride layer 190 may be made of other nitride or phosphide materials, which is not limited in this embodiment.
In the first aspect, by forming the nano-pillar structure, the contact area with the sapphire substrate 110 is effectively reduced, which is beneficial to strain release, and crack formation can be suppressed during epitaxy and temperature rise and drop. In the second aspect, by arranging the nano-pillar structure, high-quality AlN is not needed, the occupied area of dislocation is reduced by utilizing the nano-pillar structure, the dislocation can be reduced by bending effect in the folding process of the nano-pillar, and the annihilation probability of the dislocation is high due to the high-density nano-pillar; meanwhile, the smaller nano column interval can ensure that the orientation difference between different crystal columns is very small when the crystal columns are folded, inhibit the generation of new dislocation and effectively improve the crystal quality of the N-type AlGaN. Because Ga has stronger migration capability than Al, and the gap between the nano columns is in submicron level, alGaN nano columns can be folded easily without high temperature, and in the third aspect, air holes between the nano columns are beneficial to the emergent light of the quantum well region and the light extraction efficiency of the device.
Meanwhile, as an implementation manner of the present embodiment, the light emitting layer 170 includes an N-type layer 130 formed based on the growth of the nitride support post 120, wherein a plurality of recesses 131 recessed from a side close to the nitride support post 120 are formed on the N-type layer 130, a quantum well layer 140 formed based on the growth of a side of the N-type layer 130 away from the nitride support post 120, an electron blocking layer 150 formed based on the growth of a side of the quantum well layer 140 away from the N-type layer 130, and a P-type layer 160 formed based on the growth of a side of the electron blocking layer 150 away from the quantum well layer 140.
It should be noted that, since there are a plurality of voids in the undoped nitride layer 190 due to the fabrication of the nano-pillars, when the N-type layer 130 is epitaxially grown, no growth is performed in the places where the voids are formed, so that the plurality of recesses 131 are formed by polymerizing between two adjacent nano-pillars during the growth, and meanwhile, the N-type layer 130 provided in the embodiment includes an N-type AlGaN layer, the quantum well layer 140 includes an AlInGaN layer, the P-type layer 160 includes a P-type AlGaN superlattice layer, and the electron blocking layer 150 includes a P-type AlGaN layer.
The holes emitted from the N-type layer 130 and the electrons emitted from the P-type layer 160 are combined at the quantum well layer 140 to emit light, and meanwhile, the electron blocking layer 150 can play a role in blocking the holes from entering the P-type layer 160, so that the light emitting efficiency is enhanced.
As another implementation manner of this embodiment, the light emitting layer 170 includes an N-type layer 130 formed based on the growth of the nitride support pillars 120, wherein a plurality of recesses 131 recessed from a side near the nitride support pillars 120 are formed on the N-type layer 130, a quantum well layer 140 formed based on the growth of a side of the N-type layer 130 away from the nitride support pillars 120, and a P-type layer 160 formed based on the growth of a side of the electron blocking layer 150 away from the quantum well layer 140.
Second embodiment
Referring to fig. 6, the embodiment of the invention further provides a method for manufacturing a light emitting diode structure 100, where the method for manufacturing the light emitting diode structure 100 includes:
in step S101, a buffer layer 180 is formed on the substrate 110 side.
In step S102, an undoped nitride layer 190 is formed based on a side of the buffer layer 180 away from the substrate 110.
In this embodiment, the undoped nitride layer 190 comprises an undoped AlGaN layer, wherein the epitaxial growth condition of the undoped nitride layer 190 is to grow 300-800nm undoped AlxGa1-xN (0.5 < x < 1), the V/III element molar ratio is 400-1500, the pressure is 50-150mbar, and the growth temperature is 1050-1150 degrees on the buffer layer 180. Of course, in other embodiments, the undoped nitride layer 190 may be made of other nitride or phosphide materials, which is not limited in this embodiment.
In step S103, the undoped nitride layer 190 is etched from the side of the undoped nitride away from the buffer layer 180 by using a mask, so as to form a plurality of nitride spacers 120 arranged at intervals.
It should be noted that, as one implementation manner of the present embodiment, step S103 includes:
substep S1031, mixing the nanospheres with an organic solution to obtain a mixed reagent.
In this embodiment, the undoped nitride layer 190 is etched using the nano-spheres as a mask, wherein in order to enable the nano-spheres to be uniformly laid on the surface of the undoped nitride layer 190, the nano-spheres are laid in a manner of mixing the nano-spheres with an organic solution. The embodiment adopts the silicon dioxide nano-spheres as a mask, and the diameter of the silicon dioxide nano-spheres is about 200-800nm.
Meanwhile, the organic solution comprises an alcohol solution and a chloroform solution, wherein 10% of nano-spheres and an organic solvent are mixed and stirred in a volume ratio of 2:3, namely, 10% of silicon dioxide nano-spheres, the alcohol solution and the chloroform are mixed and stirred in a volume ratio of 2:3 for 30 minutes, so that the silicon dioxide nano-particles are completely diffused in the organic solution, and a mixed reagent is obtained.
Substep S1032, dropping the mixed reagent on a surface of the undoped nitride layer 190, which is far away from the buffer layer 180, to form a monoatomic layer nanosphere mask.
When the mixed reagent is dropped on the surface of the undoped nitride layer 190 far from the buffer layer 180, the nanospheres are paved on the surface of the undoped nitride layer 190 due to diffusion action, so as to form a monoatomic layer nanosphere mask.
In step S1033, etching is performed from the undoped nitride layer 190 along the gaps of the nanosphere mask until the surface of the substrate 110 is etched through to form a plurality of nitride support columns 120.
After the nanospheres are used to fabricate a mask, in this embodiment, the undoped nitride layer 190 exposed by the nanosphere gaps is etched using an inductively coupled plasma etching apparatus until the sapphire surface is etched, forming a plurality of nitride support pillars 120.
As a second implementation manner of the present embodiment, step S103 includes:
substep S1031, mixing the nanospheres with an organic solution to obtain a mixed reagent.
Substep S1032, dropping the mixed reagent on a surface of the undoped nitride layer, which is far away from the buffer layer, to form a monoatomic layer nanosphere mask.
Substep S1033, starting etching from the undoped nitride layer 190 along the void of the nanosphere mask until the undoped nitride layer 190 is etched through to the surface of the buffer layer 180 on the side far from the substrate 110 or the undoped nitride layer 190 is etched through to the inside of the buffer layer 180, so as to form a plurality of nitride support columns 120.
In this embodiment, after the nanospheres are used to make a mask, the undoped nitride layer 190 exposed in the nanosphere gaps is etched by using an inductively coupled plasma etching apparatus, and the undoped nitride layer 190 is etched through to the surface of the buffer layer 180 on the side far away from the substrate 110 or the undoped nitride layer 190 is etched through to the inside of the buffer layer 180, so as to form a plurality of nitride support columns 120.
Step S104, cleaning the plurality of nitride support columns 120.
Specifically, in the present example, the sample was washed with a buffered oxide etching solution (49% hf aqueous solution: 40% nh4f aqueous solution=1:6 (volume ratio)) for 5min to remove the silica pellets remaining above the nanopillars.
In step S105, a light emitting layer 170 is formed based on epitaxial growth of the nitride support pillar 120 on a side away from the buffer layer 180.
Wherein, step S105 includes:
in the substep S1051, an N-type layer 130 is formed on the basis of the growth of the nitride support columns 120, wherein a plurality of recesses 131 are formed on the N-type layer 130 from a side near the nitride support columns 120.
It should be noted that, since there are a plurality of voids in the undoped nitride layer 190 due to the fabrication of the nano-pillars, when the N-type layer 130 is epitaxially grown, no growth is performed in the places where the voids are formed, so that the plurality of recesses 131 are formed by polymerizing two adjacent nano-pillars during the growth, and meanwhile, the N-type layer 130 provided in the embodiment includes an N-type AlGaN layer, and the epitaxial strip of the N-type layer 130 has a V/III element molar ratio of 400-1500, a thickness of 1-3 μm, a pressure of 50-150mbar, and a growth temperature of 1050-1150 degrees.
In the substep S1052, the quantum well layer 140 is formed based on the growth of the N-type layer 130 on the side far from the nitride support post 120.
In this embodiment, alxInyGa1-x-yN/AlmInnGa1-m-nN (0 < x, y, m, n < 1) quantum well structure is grown on n-type AlGaN under the growth conditions of a V/III element molar ratio of 400-1500, a pressure of 50-150mbar and a growth temperature of 1050-1150 ℃.
In the substep S1053, the electron blocking layer 150 is formed based on the growth of the side of the quantum well layer 140 away from the N-type layer 130.
In this example, a 10-30nm thick p-type AlxGa1-xN (0.5 < x < 1) electron blocking layer 150 structure is grown, its epitaxial growth condition is that the V/III molar ratio is 800-2000, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃.
In the substep S1054, the P-type layer 160 is formed based on the side of the electron blocking layer 150 away from the quantum well layer 140.
In this example, a 30-60nm thick p-type AlxGa1-xN/AlyGa1-yN superlattice (0 < x <1,0.5< y < 1) is grown under conditions of 5-10 superlattice periods, 800-2000V/III molar ratio, 50-150mbar pressure, and 1050-1150 ℃.
In summary, the present invention provides a light emitting diode structure and a method for manufacturing the same, wherein the light emitting diode structure includes a substrate, and a buffer layer disposed on one side of the substrate; a plurality of nitride support columns arranged at intervals and positioned on one side of the buffer layer away from the substrate; and a light emitting layer formed based on epitaxial growth of the nitride support pillars. In the first aspect, the light-emitting diode structure provided by the invention effectively reduces the contact area with the sapphire substrate, and is beneficial to release of strain, so that the formation of cracks can be inhibited in the epitaxial and temperature raising and lowering processes. In the second aspect, the light-emitting diode structure provided by the invention does not need a high-quality buffer layer, the occupied area of dislocation can be reduced by utilizing the nitride support column, the dislocation can be reduced by bending effect in the folding process of the nitride support column, and the annihilation probability of the dislocation of the nitride support column with high density is very high; meanwhile, the smaller nitride support column interval can ensure that the orientation difference between different crystal columns is very small when the nitride support columns are folded, inhibit the generation of new dislocation and effectively improve the crystal quality of N-type AlGaN. In the third aspect, the air holes between the nano-pillars are beneficial to the emergent light of the quantum well layer, and are beneficial to improving the light extraction efficiency of the device.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
Claims (8)
1. A light emitting diode structure, the light emitting diode structure comprising:
a substrate;
a plurality of nitride support columns which are arranged at intervals and are positioned at one side of the substrate, wherein the distance between every two adjacent nitride support columns is 200-800nm, and each nitride support column consists of an upper part and a lower part; the lower part of the nitride support column is contacted with the substrate, and the material is AlN; the upper part of the nitride support column is above the lower part of the nitride support column, and the material is Al x Ga 1-x N(0.5<x<1) The method comprises the steps of carrying out a first treatment on the surface of the And
a light emitting layer formed based on the nitride support post epitaxial growth, the light emitting layer comprising:
an N-type layer formed based on the nitride support column growth, wherein a plurality of concave parts are formed on the N-type layer, and are recessed from one side close to the nitride support column;
a quantum well layer formed based on the growth of the side of the N-type layer away from the nitride support post;
an electron blocking layer formed based on the growth of the side of the quantum well layer away from the N-type layer; and
and a P-type layer is formed on the basis of the growth of one side of the electron blocking layer away from the quantum well layer.
2. The light emitting diode structure of claim 1, wherein the light emitting layer comprises:
forming an N-type layer based on the nitride support column growth, wherein a plurality of concave parts are formed on the N-type layer, and are concave from one side close to the nitride support column;
a quantum well layer formed based on the growth of the side of the N-type layer away from the nitride support post; and
and growing a formed P-type layer on the basis of one side of the quantum well layer away from the N-type layer.
3. The led structure of claim 1, wherein the plurality of nitride support columns are spaced apart from one another.
4. The led structure of claim 3, wherein the plurality of nitride support columns are equally spaced apart from one another.
5. A method for manufacturing a light emitting diode structure according to any one of claims 1 to 4, comprising:
forming a buffer layer based on one side of the substrate;
forming an undoped nitride layer based on one side of the buffer layer away from the substrate; wherein the mole ratio of V/III element of the undoped nitride layer is 400-1500, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃;
etching the undoped nitride layer and the buffer layer from one side of the undoped nitride far away from the buffer layer by using a mask to form a plurality of nitride support columns which are arranged at intervals;
and forming a light-emitting layer based on epitaxial growth of one side of the nitride support column away from the substrate.
6. The method of fabricating a light emitting diode structure of claim 5, wherein the step of etching the undoped nitride layer from a side of the undoped nitride layer remote from the buffer layer using a mask to form a plurality of nitride spacers arranged at intervals comprises:
mixing the nanospheres with an organic solution to obtain a mixed reagent; wherein, 10 percent of nanometer pellets with the weight/volume ratio and the organic solvent are mixed and stirred according to the volume ratio of 2:3;
the mixed reagent is dripped on the surface of one side of the undoped nitride layer far away from the buffer layer, so as to form a monoatomic layer nanosphere mask;
and etching from the undoped nitride layer along the gaps of the nanosphere mask until the substrate surface is etched through to form a plurality of nitride support columns.
7. The method of claim 5, wherein etching the undoped nitride layer from a side of the undoped nitride layer away from the buffer layer using a mask to form a plurality of nitride spacers arranged at intervals comprises:
mixing the nanospheres with an organic solution to obtain a mixed reagent;
the mixed reagent is dripped on the surface of one side of the undoped nitride layer far away from the buffer layer, so as to form a monoatomic layer nanosphere mask;
and etching from the undoped nitride layer along the gaps of the nanosphere mask until the undoped nitride layer is etched through to the surface of the buffer layer on the side far away from the substrate or the undoped nitride layer is etched through to the inside of the buffer layer, so as to form a plurality of nitride support columns.
8. The method of claim 6, wherein forming the light emitting layer based on epitaxial growth of the nitride support pillar on a side away from the buffer layer comprises:
forming an N-type layer based on the nitride support column growth, wherein a plurality of concave parts are formed on the N-type layer, and are concave from one side close to the nitride support column; the molar ratio of V/III element of the N-type layer is 400-1500, the thickness is 1-3 micrometers, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃;
forming a quantum well layer based on the growth of the side of the N-type layer away from the nitride support column; wherein the molar ratio of V/III element of the quantum well layer is 400-1500, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃;
forming an electron blocking layer based on the growth of one side of the quantum well layer away from the N-type layer; wherein the molar ratio of V/III element of the electron blocking layer is 800-2000, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃;
forming a P-type layer based on the growth of one side of the electron blocking layer away from the quantum well layer; wherein the molar ratio of V/III element of the P-type layer is 800-2000, the pressure is 50-150mbar, and the growth temperature is 1050-1150 ℃.
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| JP2012246216A (en) * | 2011-05-25 | 2012-12-13 | Agency For Science Technology & Research | Method for forming nanostructure on substrate and use of the same |
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| JP2012246216A (en) * | 2011-05-25 | 2012-12-13 | Agency For Science Technology & Research | Method for forming nanostructure on substrate and use of the same |
| CN106653973A (en) * | 2016-12-19 | 2017-05-10 | 华灿光电（浙江）有限公司 | LED chip and preparation method thereof |
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