CN108914061A - The preparation method and system of molybdenum disulfide nano lattice array based on flexible base board - Google Patents
The preparation method and system of molybdenum disulfide nano lattice array based on flexible base board Download PDFInfo
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- CN108914061A CN108914061A CN201810758560.1A CN201810758560A CN108914061A CN 108914061 A CN108914061 A CN 108914061A CN 201810758560 A CN201810758560 A CN 201810758560A CN 108914061 A CN108914061 A CN 108914061A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Abstract
The present invention discloses the preparation method and system of a kind of molybdenum disulfide nano lattice array based on flexible base board.The preparation method includes：There is the flexible base board of indium and tin oxide film to clean sputtering, obtains cleaning substrate；The cleaning substrate is dried, dry substrate is obtained；By the flexible base board and MoS of the dried and clean2Powder is placed in vacuum evaporation instrument, to MoS2Powder heating sublimation makes it sublimate on the flexible base board of dried and clean, obtains MoS2Nanometer lattice row.Using the MoS of the invention based on flexible base board2The preparation method or system of nanometer lattice row directly utilize high vacuum vapor deposition instrument to heat, by MoS2Powder is deposited to flexible base board, can prepare a series of nano-dot matrix of sizes, controllable quantity, and final product quality obtained is higher, can be applied directly in the preparation of other flexible devices.
Description
Technical field
The present invention relates to nanometer lattice row preparation fields, more particularly to a kind of molybdenum disulfide nano based on flexible base board
The preparation method and system of lattice array.
Background technique
In recent years, nano material is recognized by the world as the new material of 21 century, research, preparation and application have become and work as
Modern one of scientific research field the most active.Nano material refers to that at least one dimension is in nanoscale range in three dimensions
Material or the material being made of them as basic unit.Nano material can be divided into three classes by dimension：(1) zero dimension refers to three-dimensional ruler
Degree is all in the material of nanoscale range, such as nano particle, elementide and quantum dot；(2) one-dimensional, referring in three dimension scale has
Two dimension is in the material of nanoscale range, such as nano wire, nanotube, nanobelt, nanometer rods；(3) two-dimentional, refer to three dimension scale
In have an one-dimensional material for being in nanoscale range, such as molecular beam growth epitaxial film, ultrathin membrane, multilayer film and superlattices.By
There is very big specific surface area in nano material, surface can increased dramatically with surface tension with the reduction of partial size, make nano material
With property not available for many Traditional bulk materials, such as since particle size reduction causes the small of Macroscopic physical change of properties
Dimensional effect, the electron energy level near fermi level becomes discrete state by quasicontinuum state, absorption spectrum threshold values shifts to shortwave direction
Quantum size effect and microcosmic particle run through potential well ability macro quanta tunnel effect etc..Wherein, 1-dimention nano dot matrix
Column material due to have very big specific surface area and draw ratio, feds, micro-nano electronic circuit, photovoltaic device,
The fields such as sensor not only can be used alone, but also can construct nanostucture system, and in the assembling of the following nano-device, playing can not
Or scarce unique effect.
Due to the unique physico-chemical property of nanometer lattice row material and its in the following nano-device and ultra-large integrated
Unique effect in circuit, preparing nanometer lattice row system becomes the hot fields of countries in the world research.In the system of nano-dot matrix
It is standby technically, the problem of most critical be how and meanwhile control dimension, pattern and the homogeneity of nano-dot matrix.By grinding for several years
Study carefully, the chemical method for having a series of " from bottom to top " is developed for the parameter control in nano-dot matrix growth course
System.These methods mainly include：(1) one-dimensional nano structure is grown using the crystal structure intrinsic anisotropy feature of solid；
(2) liquid-solid interface is introduced to reduce the symmetry of grain of crystallization；(3) one is guided using the various templates with one-dimensional pattern
The formation of dimension nanometer construction；(4) regulate and control the habit of grain of crystallization by supersaturation control；(5) grain of crystallization is controlled using sealer
The speed of growth in each face；(6) self assembly of zero-dimension nano structure；(7) the size reduction of one-dimensional micron material.
But the method for nano-dot matrix made above has the disadvantages that：Preparation cost is high, and preparation process needs application gold
Belong to presoma, the catalyst contamination environment used in preparation process, preparation condition is harsh, and technology controlling and process is difficult, final finished rate
It is not high, and the nano-dot matrix finally prepared is difficult to apply on flexible device.
Summary of the invention
The preparation method for the molybdenum disulfide nano lattice array based on flexible base board that the object of the present invention is to provide a kind of and it is
System can prepare a series of nano-dot matrix of sizes, controllable quantity, and the quality of the nanometer lattice row prepared is good.
To achieve the above object, the present invention provides following schemes：
A kind of preparation method of the molybdenum disulfide nano lattice array based on flexible base board, the preparation method include：
There is the flexible base board of indium and tin oxide film to clean sputtering, obtains cleaning substrate；
The cleaning base plate is dried, dry substrate is obtained；
By the flexible base board of the clean dried and molybdenum disulfide MoS2Powder is placed in vacuum evaporation instrument, to MoS2Into
Row heating, makes MoS2It sublimes up on substrate, sublimates to obtain MoS2Nanometer lattice row.
Optionally, described to there is the substrate of indium and tin oxide film to clean sputtering, cleaning substrate is obtained, it is specific to wrap
It includes：
There is deionized water of the substrate of indium and tin oxide film containing dish washing liquid to be cleaned by ultrasonic 20min sputtering, obtains
First substrate；
First substrate deionized water is cleaned by ultrasonic 20min, obtains the second substrate；
The second substrate dehydrated alcohol is cleaned by ultrasonic 20min, obtains cleaning substrate.
Optionally, described to dry the cleaning base plate, dry substrate is obtained, is specifically included：Using baking oven by institute
It states cleaning base plate to be dried, obtains dry substrate.
Optionally, by the flexible base board and MoS of the dried and clean2Powder is placed in vacuum evaporation instrument, to MoS2It carries out
Heating, makes MoS2It sublimes up on substrate, sublimates to obtain MoS2Nanometer lattice row.It specifically includes：
By MoS2Powder is added on the evaporation source of vacuum evaporation instrument；
The flexible base board of the dried and clean is placed on Substrate table；
Vacuum evaporation instrument is carried out to be evacuated to 10-4Pa or less；
By electric current heating evaporation source, make MoS2Powder sublimes, and sublimate on flexible substrates；
MoS is obtained on flexible substrates2Nano-dot matrix.
Optionally, the method also includes：
The nanometer lattice row is characterized, the geometric parameter of nanometer lattice row is obtained.
Optionally, the nanometer lattice row is characterized using atomic force microscope observation method, obtains nanometer lattice row
Geometric parameter.
Optionally, the thickness of the nanometer lattice row and MoS when preparing nanometer lattice row2The evaporation rate of material is logical
Cross the crystal oscillator monitoring in vacuum evaporation instrument.
To achieve the above object, the present invention provides following schemes：
A kind of preparation system of the molybdenum disulfide nano lattice array based on flexible base board, the preparation system include：
Cleaning module obtains cleaning substrate for having the flexible base board of indium and tin oxide film to clean sputtering；
Drying module obtains dry substrate for drying the cleaning base plate；
Vacuum evaporation module, for the flexible of the clean dried to be dried substrate and molybdenum disulfide MoS2Powder is placed in
In vacuum evaporation instrument, to MoS2It is heated, makes MoS2It sublimes up on substrate, sublimates to obtain MoS2Nanometer lattice row.
Optionally, the cleaning module, specifically includes：
First cleaning unit, for thering is deionized water of the substrate of indium and tin oxide film containing dish washing liquid to surpass sputtering
Sound cleans 20min, obtains first substrate；
Second cleaning unit obtains the second substrate for first substrate deionized water to be cleaned by ultrasonic 20min；
Third cleaning unit obtains cleaning substrate for the second substrate dehydrated alcohol to be cleaned by ultrasonic 20min.
Optionally, the drying module is baking oven.
The specific embodiment provided according to the present invention, the invention discloses following technical effects：The present invention directly utilizes height
Vacuum evaporation instrument heating, by MoS2The polyphosphazene polymer ethylene terephthalate for having indium and tin oxide film to sputtering is deposited in powder
(PET) on flexible base board, a series of nano-dot matrix of sizes, controllable quantity has been made, and final product quality obtained is higher, it can be with
It is applied directly in the preparation of other flexible devices.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is MoS of the embodiment of the present invention based on flexible base board2The preparation method flow chart of nanometer lattice row；
Fig. 2 is MoS of the embodiment of the present invention2Lattice array and its control growth schematic diagram；
Fig. 3 is the MoS of difference of embodiment of the present invention evaporation rate2Nanometer lattice row AFM plan view；
Fig. 4 is the MoS that difference of the embodiment of the present invention evaporates thickness2Nanometer lattice row AFM perspective view；
Fig. 5 is MoS of the embodiment of the present invention based on flexible base board2The preparation system structure chart of nanometer lattice row.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts all other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is MoS of the embodiment of the present invention based on flexible base board2The preparation method flow chart of nanometer lattice row.Such as Fig. 1 institute
Show, a kind of MoS based on flexible base board2The preparation method of nanometer lattice row, the preparation method include：
Step 101：There is the substrate of indium and tin oxide film to clean sputtering, obtains cleaning substrate；
Step 102：The cleaning base plate is dried, dry substrate is obtained；
Step 103：By the drying substrate and MoS2Powder is placed in vacuum evaporation instrument, to MoS2It is heated, is made
MoS2It sublimes up on substrate, sublimates to obtain MoS2Nanometer lattice row.
Step 101 specifically includes：
There is deionized water of the substrate of indium and tin oxide film containing dish washing liquid to be cleaned by ultrasonic 20min sputtering, obtains
First substrate；
First substrate deionized water is cleaned by ultrasonic 20min, obtains the second substrate；
The second substrate dehydrated alcohol is cleaned by ultrasonic 20min, obtains cleaning substrate.
Step 102 specifically includes：The cleaning base plate is dried using baking oven, obtains dry substrate.
Step 103：It specifically includes：The flexible drying substrate and MoS of the clean dried2Powder is added to vacuum evaporation instrument
In, to MoS2It is heated, makes MoS2It sublimes up on substrate, sublimates to obtain MoS2Nanometer lattice row.
The method also includes：
The nanometer lattice row is characterized, the geometric parameter of nanometer lattice row is obtained.By regulating and controlling vacuum evaporation instrument
Middle MoS2Evaporation rate and evaporation thickness control the quantity and size of nano-dot matrix.It is seen using atomic force microscope (AFM)
It examines method to characterize the nanometer lattice row, obtains geometric parameter (Film roughness RMS (the root mean of nanometer lattice row
square)).The thickness of the nanometer lattice row and MoS when preparing nanometer lattice row2The evaporation rate of material is to pass through vacuum
The crystal oscillator monitoring in instrument is deposited.
Fig. 2 is MoS of the embodiment of the present invention2Dot matrix and its control growth schematic diagram.As shown in Figure 2, using the method for the present invention
The MoS of preparation2Dot matrix is the interaction of the self aggregation property and material and substrate using material, and MoS can directly be made2
Nano-array.And the number of array and the size of dot matrix can be controlled by evaporation rate and evaporation thickness.Evaporation rate is bigger,
The number of array is more；Evaporation thickness is bigger, and the size of single dot matrix is bigger.
Fig. 3 is the MoS of difference of embodiment of the present invention evaporation rate2Nano-dot matrix AFM plan view.As shown in figure 3, MoS2Powder
End is with different evaporation rates, identical evaporation thickness, obtained nano-dot matrix (AFM plan view).
Fig. 4 is the MoS that difference of the embodiment of the present invention evaporates thickness2Nano-dot matrix AFM perspective view.As shown in figure 4, MoS2Powder
End is with different evaporation thickness, identical evaporation rate, obtained nano-dot matrix (AFM perspective view).
The present invention uses vacuum evaporation the preparation method, utilizes MoS2With self-assembly property, one has been made on flexible substrates
The nano-dot matrix of serial size, controllable quantity, and final product quality obtained is higher, can be applied directly to other flexible devices
In preparation.
The present invention can be realized following technical effect：
1, preparation cost of the present invention is low, and does not need presoma induction, is prepared using the self-assembly property of material.
2, the material that the present invention uses is environmentally friendly material, and preparation method is simple.
3, the present invention is grown using flexible base board, can bind directly flexible device, or even can directly produce this in the future
Flexible base board of the class with nano-dot matrix, thus direct industrial application.
Fig. 5 is MoS of the embodiment of the present invention based on flexible base board2The preparation system structure chart of nanometer lattice row.Such as Fig. 5 institute
Show, a kind of MoS based on flexible base board2The preparation system of nanometer lattice row, the preparation system include：
Cleaning module 501 obtains cleaning substrate for having the substrate of indium and tin oxide film to clean sputtering；
Drying module 502 obtains dry substrate, the drying module is to dry for drying the cleaning base plate
Case；
Vacuum evaporation module 503, the flexible drying substrate and MoS of the clean dried2Powder is added to vacuum evaporation instrument
In, to MoS2It is heated, makes MoS2It sublimes up on substrate, sublimates to obtain MoS2Nanometer lattice row.
The cleaning module 501, specifically includes：
First cleaning unit, for thering is deionized water of the substrate of indium and tin oxide film containing dish washing liquid to surpass sputtering
Sound cleans 20min, obtains first substrate；
Second cleaning unit obtains the second substrate for first substrate deionized water to be cleaned by ultrasonic 20min；
Third cleaning unit obtains cleaning substrate for the second substrate dehydrated alcohol to be cleaned by ultrasonic 20min.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For system disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of preparation method of the molybdenum disulfide nano lattice array based on flexible base board, which is characterized in that the preparation method
Including：
There is the flexible base board of indium and tin oxide film to clean sputtering, obtains cleaning substrate；
The cleaning substrate is dried, dry substrate is obtained；
By the dry substrate and molybdenum disulfide MoS2Powder is placed in vacuum evaporation instrument, to MoS2It is heated, makes MoS2It rises
In China to flexible base board, sublimate to obtain MoS2Nanometer lattice row.
2. the preparation method of the molybdenum disulfide nano lattice array according to claim 1 based on flexible base board, feature exist
In, it is described to there is the flexible base board of indium and tin oxide film to clean sputtering, cleaning substrate is obtained, is specifically included：
There is deionized water of the flexible base board of indium and tin oxide film containing dish washing liquid to be cleaned by ultrasonic 20min sputtering, obtains
First substrate；
First substrate deionized water is cleaned by ultrasonic 20min, obtains the second substrate；
The second substrate dehydrated alcohol is cleaned by ultrasonic 20min, obtains cleaning substrate.
3. the preparation method of the molybdenum disulfide nano lattice array according to claim 1 based on flexible base board, feature exist
In, it is described to dry the cleaning substrate, dry substrate is obtained, is specifically included：Using baking oven by the cleaning base
Plate is dried, and dry substrate is obtained.
4. the preparation method of the molybdenum disulfide nano lattice array according to claim 1 based on flexible base board, feature exist
In the flexible base board and MoS by the dried and clean2Powder is placed in vacuum evaporation instrument, to MoS2It is heated, is made
MoS2It sublimes up on substrate, sublimates to obtain MoS2Nanometer lattice row.It specifically includes：By MoS2Powder is added to vacuum evaporation instrument
On evaporation source；The flexible base board of the dried and clean is placed on Substrate table；Vacuum evaporation instrument is carried out to be evacuated to 10-4Pa
Below；By electric current heating evaporation source, make MoS2Powder sublimes, and sublimate on substrate；MoS is obtained on substrate2Nano dot
Battle array.
5. the preparation method of the molybdenum disulfide nano lattice array according to claim 1 based on flexible base board, feature exist
In, the method also includes：
The nanometer lattice row is characterized, the geometric parameter of nanometer lattice row is obtained.
6. the characterizing method of the molybdenum disulfide nano lattice array according to claim 5 based on flexible base board, feature exist
In, using atomic force microscope observation method to the nanometer lattice row carry out surface topography characterization, obtain the several of nanometer lattice row
What parameter.
7. the preparation method of the molybdenum disulfide nano lattice array according to claim 1 based on flexible base board, feature exist
In, the thickness of the nanometer lattice row and MoS when preparing nanometer lattice row2The evaporation rate of material is by vacuum evaporation instrument
Interior crystal oscillator monitoring.
8. a kind of preparation system of the molybdenum disulfide nano lattice array based on flexible base board, which is characterized in that the preparation system
Including：
Cleaning module obtains cleaning substrate for having the substrate of indium and tin oxide film to clean sputtering；
Drying module obtains dry substrate for drying the cleaning base plate；
Vacuum evaporation module, by the flexible base board of the dried and clean and molybdenum disulfide MoS2Powder is placed in vacuum evaporation instrument,
To MoS2It is heated, is allowed to sublime up on flexible base board, sublimate to obtain MoS2Nanometer lattice row.
9. the preparation system of the molybdenum disulfide nano lattice array according to claim 8 based on flexible base board, feature exist
In the cleaning module specifically includes：
First cleaning unit has the substrate of indium and tin oxide film clear with the deionized water ultrasound containing dish washing liquid for that will sputter
20min is washed, first substrate is obtained；
Second cleaning unit obtains the second substrate for first substrate deionized water to be cleaned by ultrasonic 20min；
Third cleaning unit obtains cleaning substrate for the second substrate dehydrated alcohol to be cleaned by ultrasonic 20min.
10. the preparation system of the molybdenum disulfide nano lattice array according to claim 8 based on flexible base board, feature exist
In the drying module is baking oven.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63195259A (en) * | 1987-02-06 | 1988-08-12 | Sumitomo Electric Ind Ltd | Production of molybdenum disulfide thin film |
| CN104498878A (en) * | 2014-12-12 | 2015-04-08 | 电子科技大学 | Method for preparing molybdenum disulfide thin film |
| CN106086990A (en) * | 2016-08-04 | 2016-11-09 | 北京工业大学 | A kind of method of the immobilized molybdenum bisuphide of porous titania thin films |
| KR20170123517A (en) * | 2016-04-29 | 2017-11-08 | 고려대학교 세종산학협력단 | Transition metal molybdenum disulfide based photosensor array structure |
-
2018
- 2018-07-11 CN CN201810758560.1A patent/CN108914061A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63195259A (en) * | 1987-02-06 | 1988-08-12 | Sumitomo Electric Ind Ltd | Production of molybdenum disulfide thin film |
| CN104498878A (en) * | 2014-12-12 | 2015-04-08 | 电子科技大学 | Method for preparing molybdenum disulfide thin film |
| KR20170123517A (en) * | 2016-04-29 | 2017-11-08 | 고려대학교 세종산학협력단 | Transition metal molybdenum disulfide based photosensor array structure |
| CN106086990A (en) * | 2016-08-04 | 2016-11-09 | 北京工业大学 | A kind of method of the immobilized molybdenum bisuphide of porous titania thin films |
Non-Patent Citations (2)
| Title |
|---|
| KUNPING GUO ET AL.: ""High-performance flexible inverted organic light-emitting diodes by exploiting MoS2 nanopillar arrays as electron-injecting and lightcoupling layers"", 《NANOSCALE》 * |
| XIYING MA ET AL.: ""Thermal Evaporation Deposition of Few-layer MoS2 Films"", 《NANO-MICRO》 * |
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Application publication date: 20181130 |