CN108900104B - IGBT analog device, level analog circuit and three-level simulation platform - Google Patents
IGBT analog device, level analog circuit and three-level simulation platform Download PDFInfo
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- H—ELECTRICITY
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- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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Abstract
The invention discloses an IGBT analog device, a level analog circuit and a three-level simulation platform, wherein the IGBT analog device comprises an optocoupler device and a first diode, the anode of a light emitting diode of the optocoupler device is a grid electrode of the IGBT, and the cathode of the light emitting diode of the optocoupler device is used for grounding. The collector electrode of the optocoupler is connected with the cathode of the first diode, and the connecting node forms the drain electrode of the IGBT; and the emitter of the optocoupler is connected with the anode of the first diode, and the connecting node forms the source electrode of the IGBT. The method can solve the problem that the cost of the IGBT for the initial algorithm debugging platform is relatively high.
Description
Technical Field
The invention relates to the technical field of circuit simulation, in particular to an IGBT analog device, a level analog circuit and a three-level simulation platform.
Background
The IGBT (Insulated Gate Bipolar Transistor ) is a composite fully-controlled voltage-driven power semiconductor device composed of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor), and has the advantages of both high input impedance of the MOSFET (metal-oxide semiconductor field effect transistor) and low on-voltage drop of the GTR (power transistor). The GTR saturation voltage is reduced, the current carrying density is high, the driving current is high, the MOSFET driving power is small, the switching speed is high, the conduction voltage drop is high, and the current carrying density is low. The IGBT combines the advantages of the two devices, and has small driving power and reduced saturation voltage. The device is very suitable for being applied to the fields of variable current systems with the direct current voltage of 600V or above, such as alternating current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
In the prior art, a typical three-level topology adopts 4 IGBTs and two diodes to form a phase bridge arm, different output voltages are obtained by controlling different IGBTs to be turned on and off, and random switching of load voltage among three levels can be realized. And three-level phase loops are connected in parallel to form a three-phase three-level topological structure, and the topological structure is widely applied to the fields of photovoltaics, energy storage, wind power and the like.
Currently, in order to facilitate engineers to debug three-level algorithms, an experimental platform is usually built in a laboratory. The existing experimental platform has two modes of a physical platform and a simulation platform. The whole development period of the hardware system of the three-level algorithm debugging platform is long, but in order to develop related software of the three-level algorithm, the design of the whole three-level debugging platform must be finished first. The existing three-level debugging platform must comprise a 12-channel isolation driving circuit design, an IGBT protection circuit, a module busbar design, a bus capacitor design and the like, so that the period for developing the three-level debugging platform is extremely long, the manufacturing cost of the special isolation driving circuit design, the module busbar and the like is high, meanwhile, due to the fact that the number of related driving circuits is large, the period for independently debugging any circuit module is also long, and the progress of software personnel can be seriously influenced.
In addition, the cost of the matched physical platform manufactured by the IGBT is extremely high, the cost of each component such as the IGBT module, the capacitor, the laminated busbar, the driving core and the like is extremely high, and if the laboratory uses a physical object as an initial algorithm debugging platform, the cost is extremely high.
Disclosure of Invention
The invention mainly aims to provide an IGBT simulation device, which aims to solve the technical problem that the manufacturing cost of the conventional IGBT for an initial algorithm debugging platform is high.
In order to achieve the above object, the present invention provides an IGBT analog device including an optocoupler device and a first diode;
the anode of the light emitting diode of the optocoupler is a grid electrode of the IGBT, and the cathode of the light emitting diode of the optocoupler is used for grounding; the collector electrode of the optocoupler is connected with the cathode of the first diode, and the connecting node forms the drain electrode of the IGBT; and the emitter of the optocoupler is connected with the anode of the first diode, and the connecting node forms the source electrode of the IGBT.
Preferably, the withstand voltage value of the optocoupler is 70V-100V, and the working current range is 50-100mA.
Preferably, the optocoupler is an optocoupler relay.
In order to achieve the above object, the present invention further provides a level simulation circuit, which includes a power supply, a first voltage stabilizing module, a second voltage stabilizing module, a third voltage stabilizing module, a fourth voltage stabilizing module, a first freewheel module, a second freewheel module, a first control signal input end, a second control signal input end, a third control signal input end, a fourth control signal input end, and the IGBT simulation devices described above, where the number of the IGBT simulation devices is four, and the IGBT simulation devices are respectively a first transistor device, a second transistor device, a third transistor device, and a fourth transistor device, and the power supply includes a first output end, a second output end, and a third output end;
the input end of the first voltage stabilizing module is a first control signal input end of the level simulation circuit, and the output end of the first voltage stabilizing module is connected with the controlled end of the first transistor device;
the input end of the first transistor device is connected with the first output end of the power supply, and the output end of the first transistor device is connected with the input end of the second transistor device and the output end of the first follow current module; the controlled end of the second transistor device is connected with the output end of the second voltage stabilizing module, the output end of the second transistor device is connected with the output end of the third transistor device, and the connection node of the second transistor device and the third transistor device is the output end of the level simulation circuit; the input end of the second voltage stabilizing module is a second control signal input end of the level simulation circuit; the output end of the third transistor device is respectively connected with the input end of the fourth transistor device and the input end of the second follow current module, and the controlled end of the third transistor device is connected with the output end of the third voltage stabilizing module; the input end of the third voltage stabilizing module is a third control signal input end of the level simulation circuit;
the controlled end of the fourth transistor device is connected with the output end of the fourth voltage stabilizing module, and the output end of the fourth transistor device is connected with the second output end of the power supply; the input end of the fourth voltage stabilizing module is connected with the fourth control signal input end of the level simulation circuit; the output end of the second follow current module is connected with the input end of the first follow current module, and the connection node of the second follow current module and the first follow current module is a third output end of the power supply.
Preferably, the first and second freewheeling modules are unidirectional conduction diodes.
Preferably, the first voltage stabilizing module, the second voltage stabilizing module, the third voltage stabilizing module and the fourth voltage stabilizing module are resistors.
Preferably, the first and second freewheel modules are diodes.
In order to achieve the above object, the present invention further provides a three-level simulation platform, which includes a controller and the level simulation circuits described above, where the number of the level simulation circuits is plural, a plurality of control signal input ends of the level simulation circuits are respectively connected with a plurality of control signal output ends of the controller, an input end of the load is connected with a power supply, and an output end of the load is connected with an input end of the level simulation circuits.
Preferably, the number of the level simulation circuits is three.
Preferably, the three-level simulation platform further comprises a plurality of loads, wherein the loads are used for being connected between a first output end and a second output end of the power supply, and the loads are also used for being connected between the second output end and a third output end of the power supply; the load is an RC load or an LC load.
The IGBT simulation device comprises an optocoupler device and a first diode, wherein the anode of a light emitting diode of the optocoupler device is a grid electrode of the IGBT, and the cathode of the light emitting diode of the optocoupler device is used for grounding. The collector of the optocoupler is connected with the cathode of the first diode, the connecting node forms the drain electrode of the IGBT, the emitter of the optocoupler is connected with the anode of the first diode, and the connecting node forms the source electrode of the IGBT. Through the connection, the optocoupler device and the first diode form a structure for simulating the IGBT, wherein the current and voltage and related characteristic transformation are equivalent to the test by using the IGBT in the experimental test, the simulation of the IGBT function is realized, and compared with a composite full-control voltage-driven power semiconductor device consisting of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor), the IGBT simulation device provided by the invention can solve the problem that the cost of the traditional IGBT for an initial algorithm debugging platform is relatively high, saves the development cost, and has better experimental effect and economic value.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic circuit diagram of an IGBT analog device of the present invention;
FIG. 2 is a schematic diagram of a level simulation circuit according to the present invention;
FIG. 3 is a schematic block diagram of a three-level simulation platform according to the present invention.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The invention provides an IGBT simulation device, which aims to solve the problem that the manufacturing cost of the traditional IGBT for an initial algorithm debugging platform is high.
In an embodiment, as shown in fig. 1, an IGBT analog device includes a first optocoupler U1 and a first diode D1, where an anode of a light emitting diode of the first optocoupler U1 is a gate G of the IGBT, a cathode of the light emitting diode of the first optocoupler U1 is used for grounding, a collector of the first optocoupler U1 is connected with the cathode of the first diode D1, a connection node forms a drain D of the IGBT, an emitter of the first optocoupler U1 is connected with the anode of the first diode D1, and a connection node forms a source S of the IGBT.
The light emitting diode on the primary side of the first optocoupler device U1 is electrically isolated from the secondary side, so that the light emitting diode can be used as a driving device, and a 12-way isolation driving design in a standard three-level scheme is not required to be adopted again, so that the problems of rising manufacturing cost and special electric design caused by special isolation driving design are avoided. Therefore, the circuit structure of the IGBT analog device is simple and convenient, and the cost is low. In addition, the anode of the light emitting diode of the optocoupler is used for replacing the grid G of the IGBT, the connection node of the collector of the optocoupler and the cathode of the first diode D1 forms the drain electrode D of the IGBT, and the connection node of the emitter of the optocoupler and the anode of the first diode D1 forms the source electrode S of the IGBT, so that the basic characteristics of the IGBT are maintained, the change of the current voltage and the conduction state of the IGBT can be simulated to a great extent, and the measured performance is similar to that of the corresponding IGBT. And because of the characteristics of the optocoupler, the electric isolation between the grid G of the IGBT and the source S and the drain D of the IGBT can be realized without adding other means, and the optocoupler is simple and convenient and has good practicability. When the performance of the IGBT with different parameters is required to be measured, the performance can be realized by selecting parameters of the optocoupler and the diode, and the voltage withstand value of the diode is required to be larger than that of the optocoupler, so that the safety and the reliability of the circuit are ensured.
Optionally, the withstand voltage value of the optocoupler is 70V-100V, the working current range is 50-100mA, and the range value can achieve a good simulation effect.
Optionally, the optocoupler is an optocoupler relay, so that simulation of larger current and higher voltage can be realized.
IN order to achieve the above object, the present invention further provides a level simulation circuit, as shown IN fig. 2, where the level simulation circuit includes a power supply, a first voltage stabilizing module, a second voltage stabilizing module, a third voltage stabilizing module, a fourth voltage stabilizing module, a first freewheel module, a second freewheel module, a first control signal input terminal PWM1, a second control signal input terminal PWM2, a third control signal input terminal PWM3, a fourth control signal input terminal PWM4, and the IGBT simulation devices as described above, where the number of the IGBT simulation devices is four, and the power supply includes a first output terminal dc+in, a second output terminal DC0, and a third output terminal DC-IN, and the number of the IGBT simulation devices is the first transistor device Q1, the second transistor device Q2, the third transistor device Q3, and the fourth transistor device Q4, respectively. The input end of the first voltage stabilizing module is a first control signal input end PWM1 of the level analog circuit, and the output end of the first voltage stabilizing module is connected with the controlled end of the first transistor device Q1. The input end of the first transistor device Q1 is connected with the first output end dc+in of the power supply, and the output end of the first transistor device Q1 is connected with the input end of the second transistor device Q2 and the output end of the first freewheel module. The controlled end of the second transistor device Q2 is connected to the output end of the second voltage stabilizing module, the output end of the second transistor device Q2 is connected to the output end of the third transistor device Q3, and the connection node between the second transistor device Q2 and the third transistor device Q3 is the output end of the level analog circuit. The input end of the second voltage stabilizing module is a second control signal input end PWM2 of the level analog circuit, the output end of the third transistor device Q3 is respectively connected with the input end of the fourth transistor device Q4 and the input end of the second follow current module, and the controlled end of the third transistor device Q3 is connected with the output end of the third voltage stabilizing module. The input end of the third voltage stabilizing module is a third control signal input end PWM3 of the level simulation circuit, the controlled end of the fourth transistor device Q4 is connected with the output end of the fourth voltage stabilizing module, the output end of the fourth transistor device Q4 is connected with a second output end DC0 of the power supply, and the input end of the fourth voltage stabilizing module is a fourth control signal input end PWM4 of the level simulation circuit. The output end of the second follow current module is connected with the input end of the first follow current module, and the connection node of the second follow current module and the first follow current module is the third output end DC-IN of the power supply.
The first voltage stabilizing module, the second voltage stabilizing module, the third voltage stabilizing module and the fourth voltage stabilizing module are used for stabilizing control signals input by the first control signal input end PWM1, the second control signal input end PWM2, the third control signal input end PWM3 and the fourth control signal input end PWM4, so that the voltage passing through the first voltage stabilizing module, the second voltage stabilizing module, the third voltage stabilizing module and the fourth voltage stabilizing module is stable, and the performance and the structure of the first transistor device Q1, the second transistor device Q2, the third transistor device Q3 and the fourth transistor device Q4 are not damaged. IN the different on states of the first transistor device Q1, the second transistor device Q2, the third transistor device Q3 and the fourth transistor device Q4, the first output terminal dc+in, the second output terminal DC0 and the third output terminal DC-IN of the power supply pass through the first freewheel module and the second freewheel module, and then pass through the first transistor device Q1, the second transistor device Q2, the third transistor device Q3 and the fourth transistor device Q4, and output corresponding voltages because of the three input terminals of the first output terminal dc+in, the second output terminal DC0 and the third output terminal DC-IN of the power supply and the change of the on states of the first transistor device Q1, the second transistor device Q2, the third transistor device Q3 and the fourth transistor device Q4, the output voltage of the level simulation circuit is changed, which is specifically:
(1) When the first transistor device Q1 and the second transistor device Q2 are turned on, the third transistor device Q3 and the fourth transistor device Q4 are turned off, and the level analog circuit outputs a voltage difference between the first output terminal dc+in of the power supply and the first output terminal dc+in of the power supply.
(2) When the second transistor device Q2 and the third transistor device Q3 are turned on, the first transistor device Q1 and the fourth transistor device Q4 are turned off, and the level analog circuit outputs a voltage difference between the second output terminal DC0 of the power supply and the third output terminal DC-IN of the power supply.
(3) When the third transistor device Q3 and the fourth transistor device Q4 are turned on, the first transistor device Q1 and the second transistor device Q2 are turned off, and the level analog circuit outputs a voltage difference between the first output terminal dc+in of the power supply and the third output terminal DC-IN of the power supply.
In the embodiment, the selective output of a plurality of voltages is realized, and the control output effect is good. And 3.3V, 5V and 15V control panel PWM output can be compatible. The second transistor device Q2 includes a second optocoupler device U2 and a second diode D2, the third transistor device Q3 includes a third optocoupler device U3 and a third diode D3, and the fourth transistor device Q4 includes a fourth optocoupler device U3 and a fourth diode D3.
In addition, the level simulation circuit includes IGBT simulation devices, i.e., a first transistor device Q1, a second transistor device Q2, a third transistor device Q3, and a fourth transistor device Q4. The working principle of the level simulation circuit can refer to the above embodiment, and will not be described herein. It should be noted that, since the level simulation circuit of the present embodiment adopts the technical scheme of the IGBT simulation device described above, the level simulation circuit has all the beneficial effects of the IGBT described above.
Optionally, the first and second freewheeling modules are a fifth diode D5 and a sixth diode D6. Optionally, the first freewheeling module and the second freewheeling module are unidirectional conduction diodes.
The unidirectional conduction diode has a good follow current effect, is basically lossless, can be used for simulating an IGBT follow current diode by using a Schottky diode with low conduction voltage, and has a current capacity far greater than that of an optocoupler device, so that a good simulation effect can be realized.
Optionally, the first voltage stabilizing module, the second voltage stabilizing module, the third voltage stabilizing module and the fourth voltage stabilizing module are respectively a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4.
The structure for realizing the voltage stabilizing effect by using the resistor is simple, and the effect is good. In addition, PWM control (such as 3.3V/5V/15V) compatible with various voltages can be realized, and at the moment, the resistance values of the first voltage stabilizing module, the second voltage stabilizing module and the third voltage stabilizing module are only required to be changed, so that various different voltages can be comprehensively controlled, and diversified control is realized.
The circuit principle of the present invention is described below with reference to fig. 1 and 2:
the control signal flows through the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 via the first control signal input terminal PWM1, the second control signal input terminal PWM2, the third control signal input terminal PWM3 and the fourth control signal input terminal PWM4, respectively, so that the on and off states of the first transistor device Q1, the second transistor device Q2, the third transistor device Q3 and the fourth transistor device Q4 can be controlled, respectively, and the voltage of the power supply is gated through the first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth diode D5 or the sixth diode D6, thereby realizing the output of different voltages:
(1) When the first transistor device Q1 and the second transistor device Q2 are turned on, the third transistor device Q3 and the fourth transistor device Q4 are turned off, a current of the first output terminal dc+in of the power supply flows through the first transistor device Q1 and the second transistor device Q2, a second output terminal DC0 of the power supply flows through the first diode D1, the fifth diode D5 and the second transistor device Q2, and the level analog circuit outputs a voltage difference value of the first output terminal dc+in and the second output terminal DC0 of the power supply.
(2) When the second transistor device Q2 and the third transistor device Q3 are turned on, the first transistor device Q1 and the fourth transistor device Q4 are turned off, a current of the second output terminal DC0 of the power supply flows through the second diode D2, the fifth diode D5 and the second transistor device Q2, a current of the third output terminal DC-IN of the power supply flows through the sixth diode D6, the fourth diode D4 and the third transistor device Q3, and the level analog circuit outputs a voltage difference value of the second output terminal DC0 and the third output terminal DC-IN of the power supply.
(3) When the third transistor device Q3 and the fourth transistor device Q4 are turned on, the first transistor device Q1 and the second transistor device Q2 are turned off, a current of the first output terminal dc+in of the power supply flows through the fourth diode D4, the third diode D3 and the third transistor device Q3, a current of the third output terminal DC-IN of the power supply flows through the sixth diode D6, the fourth diode D4, the third transistor device Q3 and the fourth transistor device Q4, and the level analog circuit outputs a voltage difference value of the first output terminal dc+in and the third output terminal DC-IN of the power supply.
The level simulation circuit can output the voltage which controls the transistor devices according to the control signal, so that the voltage at the output end of the level simulation circuit is changed, the structure is simple, and the technical effect is good.
In order to achieve the above objective, the present invention further provides a three-level simulation platform, as shown in fig. 3, where the three-level simulation platform includes a controller and the level simulation circuits described above, the number of the level simulation circuits is multiple, multiple control signal input ends of the level simulation circuits are respectively connected with multiple control signal output ends of the controller, an input end of the load is connected with a power supply, and an output end of the load is connected with an input end of the level simulation circuit.
The three-level simulation platform comprises a level simulation circuit. The working principle of the three-level simulation platform can refer to the above embodiment, and will not be described herein. It should be noted that, since the three-level simulation platform of the present embodiment adopts the technical scheme of the level simulation circuit, the three-level simulation platform has all the beneficial effects of the level simulation circuit.
Because the existing three-level simulation platform cannot perform control program verification, simple modeling simulation verification can be performed only through Matlab or other simulation software, and actual verification can not be performed on a control loop and a PWM generation loop of a control board. The effect of the three-level simulation platform is related to the model accuracy of each part of the actual platform, if an advanced simulation system platform capable of generating program codes is selected, the cost is extremely high, and meanwhile, the supporting hardware support is also needed, and the three-level simulation platform adopting the IGBT is high in cost. Therefore, the three-level simulation platform with good test effect is required to be replaced by the three-level simulation platform which is economical and practical. In this scheme, replace IGBT through utilizing analog device for need not to adopt the accessory such as isolation architecture and dedicated supporting stromatolite busbar at simulation platform high cost again, thereby can practice thrift the expense, the simple structure of realization in addition, be convenient for large tracts of land popularization has better economic value. Optionally, the number of the level simulation circuits in the three-level simulation platform can be multiple, and the level simulation circuits can be selected according to actual needs.
Optionally, the number of the level analog circuits is three, including a first level analog circuit, a second level analog circuit, and a third level analog circuit.
Optionally, the three-level simulation platform further includes a plurality of loads, where the loads are used to connect between the first output terminal dc+in and the second output terminal DC0 of the power supply, and the loads are further used to connect between the second output terminal DC0 and the third output terminal DC-IN of the power supply, and the loads are RC loads or LC loads.
The three-level simulation platform is powered by an external direct current bus, and the voltage of the external highest direct current bus is generally not more than 60% of the withstand voltage value of the optocoupler. The two ends of the load can be used for testing the output result of the three-level simulation platform, so the load can be connected with an RC load, for example, a first load between a first output end DC+IN and a second output end DC0 of a power supply, a second load between the second output end DC0 and a third output end DC-IN of the power supply, the first load comprises a first capacitor C1 and a fifth resistor R5, the second load comprises a second capacitor C2 and a sixth resistor R6, and an LC load can be selected if a high-current optocoupler relay is used.
The foregoing description of the preferred embodiments of the present invention should not be construed as limiting the scope of the invention, but rather should be understood to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the following description and drawings or any application directly or indirectly to other relevant art(s).
Claims (10)
1. The IGBT simulation device is characterized by comprising an optocoupler device and a first diode;
the anode of the light emitting diode of the optocoupler is a grid electrode of the IGBT, and the cathode of the light emitting diode of the optocoupler is used for grounding; the collector electrode of the optocoupler is connected with the cathode of the first diode, and the connecting node forms the drain electrode of the IGBT; and the emitter of the optocoupler is connected with the anode of the first diode, and the connecting node forms the source electrode of the IGBT.
2. The IGBT analog device of claim 1 wherein the optocoupler voltage withstand is 70V-100V and the operating current range is 50-100mA.
3. The IGBT analog device of claim 1, wherein the optocoupler device is an optocoupler relay.
4. A level simulation circuit, characterized in that the level simulation circuit comprises a power supply, a first voltage stabilizing module, a second voltage stabilizing module, a third voltage stabilizing module, a fourth voltage stabilizing module, a first freewheel module, a second freewheel module, a first control signal input end, a second control signal input end, a third control signal input end, a fourth control signal input end and the IGBT simulation device according to any one of claims 1 to 3, the number of the IGBT simulation devices is four, and the power supply comprises a first output end, a second output end and a third output end;
the input end of the first voltage stabilizing module is a first control signal input end of the level simulation circuit, and the output end of the first voltage stabilizing module is connected with the controlled end of the first transistor device;
the input end of the first transistor device is connected with the first output end of the power supply, and the output end of the first transistor device is connected with the input end of the second transistor device and the output end of the first follow current module; the controlled end of the second transistor device is connected with the output end of the second voltage stabilizing module, the output end of the second transistor device is connected with the output end of the third transistor device, and the connection node of the second transistor device and the third transistor device is the output end of the level simulation circuit; the input end of the second voltage stabilizing module is a second control signal input end of the level simulation circuit; the output end of the third transistor device is respectively connected with the input end of the fourth transistor device and the input end of the second follow current module, and the controlled end of the third transistor device is connected with the output end of the third voltage stabilizing module; the input end of the third voltage stabilizing module is a third control signal input end of the level simulation circuit;
the controlled end of the fourth transistor device is connected with the output end of the fourth voltage stabilizing module, and the output end of the fourth transistor device is connected with the second output end of the power supply; the input end of the fourth voltage stabilizing module is connected with the fourth control signal input end of the level simulation circuit; the output end of the second follow current module is connected with the input end of the first follow current module, and the connection node of the second follow current module and the first follow current module is a third output end of the power supply.
5. A level-analog circuit as claimed in claim 4, wherein the first and second freewheel modules are unidirectional conducting diodes.
6. The level modeling circuit of claim 4, wherein the first voltage regulator module, the second voltage regulator module, the third voltage regulator module, and the fourth voltage regulator module are each resistors.
7. A level analog circuit as claimed in claim 4, wherein the first and second freewheel modules are diodes.
8. The three-level simulation platform is characterized by comprising a load, a controller and the level simulation circuits according to any one of claims 4 to 7, wherein the number of the level simulation circuits is multiple, a plurality of control signal input ends of the level simulation circuits are respectively connected with a plurality of control signal output ends of the controller, an input end of the load is connected with a power supply, and an output end of the load is connected with an input end of the level simulation circuit.
9. The three-level simulation platform of claim 8, wherein the number of level simulation circuits is three.
10. The three-level simulation platform of claim 8, further comprising a plurality of loads for connection between the first output and the second output of the power supply, the loads further for connection between the second output and the third output of the power supply; the load is an RC load or an LC load.
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