CN108884559A - 用于vhf-rf pvd腔室中的预涂覆的屏蔽物 - Google Patents
用于vhf-rf pvd腔室中的预涂覆的屏蔽物 Download PDFInfo
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Abstract
本公开内容的实施方式涉及用于在处理腔室中使用的改良的屏蔽物。在一个实施方式中,所述屏蔽物包括具有圆柱形状的中空主体和形成在主体的内表面上的涂覆层,所述圆柱形状大致上关于所述主体的中心轴对称。涂覆层由与在所述处理腔室中使用的溅射靶相同的材料形成。屏蔽物通过减少屏蔽物与溅射靶之间的发弧而有利地减少使用RF‑PVD沉积的膜中的颗粒污染物。发弧因屏蔽物的内表面上存在涂覆层而减少。
Description
技术领域
本公开内容的实施方式大体涉及用于在处理腔室中使用的屏蔽物。
背景技术
在目前的射频物理气相沉积(RF-PVD)腔室中,接地屏蔽物通常被安装到PVD腔室的主体并延伸经过大部分的腔室侧壁,腔室侧壁围绕基座与溅射靶之间的处理空间。屏蔽物防止从靶溅射的过量材料污染RF-PVD腔室的其余部分。发明人已经观察到,等离子体与屏蔽物之间的电位差将导致等离子体内的正离子朝向接地屏蔽物加速。包含屏蔽物的材料(例如铝)可能由于离子轰击而剥落并且污染基板表面。当使用较高RF功率和较高压力时,铝污染物的量变得更多。
因此,需要一种改良的屏蔽物。
发明内容
本文描述一种用于在物理气相沉积处理腔室中使用的屏蔽物。在一个实例中,所述屏蔽物包括具有圆柱形状的中空主体,所述圆柱形状大致上关于中空主体的中心轴对称。所述主体具有内表面和外表面。涂覆层形成在主体的内表面上。涂覆层由金属、金属氧化物、金属合金或磁性材料制成。
在另一实施方式中,提供一种用于在物理气相沉积处理腔室中使用的屏蔽物。所述屏蔽物包括延长的圆柱形主体,所述延长的圆柱形主体经构造以围绕在溅射靶与基板支撑件之间的处理空间并且保护处理腔室的侧壁免于沉积。所述主体由铝制成。涂覆层形成在延长的圆柱形主体的内表面上,其中涂覆层包含钴或钴合金。
在又一实施方式中,提供一种用于处理在物理气相沉积处理腔室中使用的屏蔽物的方法。屏蔽物包括延长的圆柱形主体,延长的圆柱形主体经构造以保护处理腔室的侧壁免于沉积。所述方法包括在所述主体的内表面上沉积涂覆层。涂覆层由金属、金属氧化物、金属合金或磁性材料制成。
附图说明
可参照附图描绘的本公开内容的说明性实施方式来理解以上简要概述和以下更详细论述的本公开内容的实施方式。然而,应注意,附图仅图示本公开内容的典型实施方式,因此不应将附图视为对本公开内容的范围的限制,因为本公开内容可认可其他同等有效的实施方式。
图1描绘具有预涂覆的屏蔽物的物理气相沉积腔室的示意性横截面图。
图2描绘图1所绘的预涂覆的屏蔽物的一部分的示意性横截面图。
图3描绘一种用于处理屏蔽物的方法。
为了便于理解,已尽可能使用相同的参考数字来指称附图共有的相同的元件。附图未按比例绘制,并且为了清楚起见可被简化。设想可将一个实施方式的元件和特征有益地并入其他实施方式中而无需进一步详述。
具体实施方式
本公开内容涉及用于在处理腔室中使用的预涂覆的屏蔽物。改良的屏蔽物通过减少屏蔽物与溅射靶之间的发弧而有利地减少使用RF-PVD沉积的膜中的颗粒污染物。发弧因屏蔽物的内表面上存在涂覆层而减少。涂覆层由与溅射靶相同的材料形成。
图1描绘具有预涂覆的屏蔽物160的物理气相沉积腔室(处理腔室100) 的示意性横截面图。PVD腔室的结构是说明性的,具有其他结构的PVD腔室或其他工艺腔室也可从依据本文提供的教示的修改中受益。可适于从本公开内容受益的合适的PVD腔室的实例包括可从美国加利福尼亚州圣克拉拉的应用材料公司(Applied Materials,Inc.,of SantaClara,California)购得的PVD 处理腔室的或系列中的任一个。来自应用材料公司或其他制造商的其他处理腔室也可从本文公开的公开内容的实施方式中受益。
处理腔室100包括设置在腔室主体104顶上的腔室盖101。盖101可从腔室主体104移开。腔室盖101包括溅射靶组件102和设置在溅射靶组件102周围的接地组件103。腔室盖101静置在上接地壳壁116的凸缘(ledge)140上,上接地壳壁116是腔室主体104的一部分。上接地壳壁116可以提供在上接地壳壁116 与腔室盖101的接地组件103之间界定的RF回程路径的一部分。然而,其他的RF回程路径也是可能的。
靶组件102可包括源分配板158,源分配板158与溅射靶114的背侧相对并且沿着溅射靶114的周缘电耦接到溅射靶114。溅射靶114可包含将在沉积工艺期间沉积在基板111上的源材料113。可执行沉积工艺以沉积金属、金属氧化物、金属合金、磁性材料或其他合适的材料。在一些实施方式中,溅射靶 114可包括背板162以支撑源材料113。背板162可包含导电材料,例如铜、铜锌、铜铬或与溅射靶相同的材料,使得RF功率和可选的DC功率可以经由背板162耦接到源材料113。或者,背板162可以是非导电的,并且可以包括导电元件(未图示),例如电引线(electrical feedthroughs)或类似物。
磁电管组件196可至少部分地设置在腔(cavity)170内。磁电管组件提供邻近溅射靶的旋转磁场,以辅助处理腔室104内的等离子体处理。磁电管组件196可包括电动机176、电动机轴174和可旋转磁体(例如耦接到磁体支撑构件172的多个磁体188)。
腔室主体104包含基板支撑件133,基板支撑件133具有基板支撑表面 133a,用于在基板支撑表面133a上接收基板111。基板支撑件133经构造以支撑基板,使得基板111的中心与处理腔室100的中心轴186对准。基板支撑件 133可位于下接地壳壁110内,下接地壳壁110可以是腔室主体104的壁。下接地壳壁110可以电耦接到腔室盖101的接地组件103,使得RF回程路径被提供到设置于腔室盖101上方的RF电源182。RF电源182可向靶组件102提供RF能量。
基板支撑表面133a面向溅射靶114的主表面并且可升高到基板支撑件133 的其余部分上方。基板支撑表面133a支撑用于处理的基板111。基板支撑件 133可包括界定基板支撑表面133a的介电构件105。在一些实施方式中,基板支撑件133可包括一个或多个设置于介电构件105下方的导电构件107。
基板支撑件133在腔室主体104的处理空间120中支撑基板111。处理空间 120是用于处理基板111的腔室主体104的内部空间的一部分,并且可以在基板111的处理期间与内部空间的其余部分(例如非处理空间)分隔(例如经由处理配件127)。将处理空间120定义为处理期间在基板支撑件133上方的区域(例如,当在处理位置时介于溅射靶114与基板支撑件133之间)。
可以提供连接到底部腔室壁123的波纹管122,以保持腔室主体104的内部空间与腔室主体104外部的环境(atmosphere)之间的分隔。
可以从气源126通过质量流量控制器128将一种或多种气体供应到腔室主体104的下部中。可以提供排放口130并且排放口130可经由阀132耦接到泵(未图示),以用于排放腔室主体104的内部并且有助于在腔室主体104内部保持期望的压力。
RF偏压电源134可耦接到基板支撑件133以在基板111上引起(induce)负 DC偏压。此外,在一些实施方式中,在处理过程中可以在基板111上形成负 DC自偏压。在一些实施方式中,由RF偏压电源134供应的RF能量可以在约2 MHz至约60MHz的频率范围内,例如可以使用诸如2MHz、13.56MHz、40 MHz或60MHz的非限制性频率。
处理配件127可以包括一个或多个环状主体129、第一环124、第二环144 和屏蔽物160。处理配件127围绕腔室主体104的处理空间120,从而使腔室主体104和其他腔室部件在处理期间免于损坏和/或污染。屏蔽物160在基板支撑件133处于基板支撑件133的最低处理位置中时沿着壁116和下接地壳壁110 向下延伸到基板支撑件133的顶表面之下,并且向上返回直到到达或接近基板支撑件133的顶表面。因此,屏蔽物160在屏蔽物160的底部形成U形部分。
可以将屏蔽物160耦接到腔室主体104的上接地壳壁116的一部分,例如到凸缘140。在其他实施方式中,可以将屏蔽物160耦接到腔室盖101,例如经由扣环175。可以将屏蔽物160耦接以接地,例如经由腔室主体104的接地连接。屏蔽物160可以包含任何合适的导电材料,例如铝、不锈钢、铜等等。若需要的话,可以通过在芯材料上沉积厚铝层来制造屏蔽物160。如下面将更详细论述的,在安装到处理腔室100中之前,用包含溅射靶材的相同材料预涂覆屏蔽物160。通过使用预涂覆的屏蔽物160,包含屏蔽物160的铝材料在处理期间不暴露,从而降低铝污染基板表面的可能性。
图2描绘依据本公开内容的实施方式的屏蔽物160的一部分的示意性横截面图。屏蔽物160具有中空主体202。中空主体202具有大体上关于屏蔽物160 的中心轴210对称的圆柱形状。中空主体202轴向对准处理腔室100的中心轴 186。屏蔽物160具有第一环状腿(annular leg)165、第二环状腿163和水平腿164。水平腿164径向延伸并且在第一环状腿165的下部将第二环状腿163连接到第一环状腿165。第二环状腿163比第一环状腿165相对地短,从而在屏蔽物160的底部形成U形或L形部分。或者,屏蔽物160的最底部不需要是U形,而可以具有另一种合适的形状。
屏蔽物160的主体202可以由单块材料制成,以形成单件式主体,或由两个或更多个焊接在一起的部件制成,以形成单件式主体。提供单件式主体可以有利地减少额外的表面,否则如果屏蔽物160由多个件形成,则额外的表面可能促使沉积材料剥落。在一个实施方式中,屏蔽物160是由铝形成的单件式主体。在另一实施方式中,屏蔽物160是由以铝涂覆的不锈钢形成的单件式主体。或者,屏蔽物160可以是任何以铝涂覆的芯材。
屏蔽物160具有形成在屏蔽物160的内表面213上的涂覆层204。本文所指的内表面213包括屏蔽物160面向基板支撑件133的暴露的表面。例如,在一些实施方式中,设置的涂覆层204可以在第一环状腿165的内表面206上沿着第一环状腿165的一部分或全体部分的纵向方向延伸。在一些实施方式中,涂覆层204可以延伸到水平腿164的上表面207、或甚至延伸到第二环状腿163 的内表面209。在大多数情况下,屏蔽物160的外表面没有涂覆层。在一些实施方式中,涂覆层204可形成在第二环状腿163的外表面211上。若需要的话,涂覆层204可以形成在屏蔽物160的所有暴露的表面上。
在各种实施方式中,涂覆层204包括与溅射靶114(图1)相同的材料。例如,如果溅射靶114由钴或钴合金制成,则涂覆层204也将是钴或钴合金。因此,涂覆层204包括与将从溅射靶114沉积在基板表面上的膜相同的材料。涂覆层204可以有至少99.95%的纯度。
取决于溅射靶114的材料,涂覆层204可以含有金属、金属氧化物、金属合金、磁性材料或类似物。在一个实施方式中,涂覆层204是钴、硅化钴、镍、硅化镍、铂、钨、硅化钨、氮化钨、碳化钨、铜、铬、钽、氮化钽、碳化钽、钛、氧化钛、氮化钛、镧、锌、它们的合金、它们的硅化物、它们的衍生物或它们的任意组合。
在一些示例性实例中,涂覆层204的材料是钴、钴合金、镍、镍合金、镍-铂合金、钨、钨合金或包含溅射靶114的其他材料。涂覆层204可以是上列材料的单层,或者可以是上列相同材料或不同材料的多层。在涂覆层204 是镍-铂合金的实例中,镍-铂合金可以含有依重量计在从约80%至约98% (例如从约85%至约95%)的范围内的镍浓度和依重量计在从约2%至约 20%(例如从约5%至约15%)的范围内的铂浓度。在一个示例性实施方式中,涂覆层204包含镍-铂合金,例如NiPt5%(约95wt%的镍和约5wt%的铂)、NiPt10%(约90wt%的镍和约10wt%的铂)、或NiPt15%(约85 wt%的镍和约15wt%的铂)。
涂覆层204的总厚度可以在约3μm至约110μm的范围内,例如在约5μm 至约110μm、约10μm至约110μm、约15μm至约110μm、约20μm至约110 μm、约25μm至110μm、约30μm至约110μm、约50μm至约110μm、约70 μm至约110μm、约90μm至约110μm的范围内。在一个实施方式中,涂覆层204具有约10μm至约25μm的厚度。涂覆层204的厚度可以视处理要求或期望的涂覆层寿命而改变。
可以在将屏蔽物160安装在处理腔室100中之前将涂覆层204施加于屏蔽物160。可以使用任何合适的技术将涂覆层204沉积、镀(plate)或以其他方式形成在屏蔽物160的内表面206上。例如,可以通过沉积工艺将涂覆层204形成在内表面206上,所述沉积工艺例如等离子体喷涂工艺、溅射工艺、PVD 工艺、CVD工艺、PE-CVD工艺、ALD工艺、PE-ALD工艺、电镀或电化学电镀工艺、化学镀层工艺(electroless deposition process)或它们的衍生工艺。在其他实施方式中,可以在处理腔室100内处理基板之前将涂覆层204施加到屏蔽物160。
在将涂覆层204形成到屏蔽物160上之前,可以通过磨料喷射(abrasiveblasting)来将内表面206或至少屏蔽物160的暴露的表面(将以涂覆层204沉积)粗糙化以具有任何所需的纹理(texture),磨料喷射可以包括例如喷珠 (bead blasting)、喷砂、喷苏打(soda blasting)、喷粉末(powder blasting)和其他微粒喷射技术。喷射还可以增强涂覆层204对屏蔽物160的粘附。可以使用其他技术来粗糙化内表面206或至少屏蔽物160的暴露的表面,所述其他技术包括机械技术(例如轮磨(wheel abrasion))、化学技术(例如酸蚀刻)、等离子体蚀刻技术和激光蚀刻技术。内表面206或至少屏蔽物160的暴露的表面 (将以涂覆层204沉积)可以具有在从约80微英寸(μin)至约500μin的范围内的平均表面粗糙度,例如从约100μin至约400μin、例如从约120μin至约220μin或从约200μin至约300μin的范围内的平均表面粗糙度。若需要的话,可以在将涂覆层204施加到屏蔽物160之后对涂覆层204施加这些粗糙化技术。
图3是用于处理在处理腔室中使用的屏蔽物的方法300,屏蔽物例如上述的屏蔽物160,处理腔室例如上述的处理腔室100。方法300通过提供环状主体而开始于方框302处,环状主体界定被主体围绕的开口。具体来说,主体是具有圆柱形状的中空主体,并且被制造成具有第一环状腿、比第一环状腿相对更短的第二环状腿和在第一环状腿的下部将第二环状腿连接到第一环状腿的水平腿,如图2大致图示的。主体由铝、不锈钢、氧化铝、氮化铝或陶瓷制成。在一个实施方式中,主体是由铝形成的单件式主体。在另一实施方式中,主体是由以铝涂覆的不锈钢形成的单件式主体。主体具有经选择以容纳基板支撑件(例如图1图示的基板支撑件133)的尺寸的内直径。
在方框304处,通过沉积工艺在主体的内表面上形成涂覆层,所述沉积工艺例如等离子体喷涂工艺、溅射工艺、PVD工艺、CVD工艺、等PE-CVD 工艺、ALD工艺、PE-ALD工艺、电镀或电化学电镀工艺、化学镀层工艺或它们的衍生工艺。主体的内表面包括在处理腔室中面向基板支撑件的暴露的表面,例如第一环状腿165的内表面206、水平腿164的上表面207、第二环状腿163的内表面209和/或第二环状腿163的外表面211,如图1和图2所示。在一个示例性实施方式中,通过等离子体喷涂在主体的内表面上形成涂覆层。等离子体喷涂可以在真空环境中进行,以提高涂覆层的纯度和密度。涂覆层是与将从设置在处理腔室内的溅射靶沉积在基板表面上的膜相同的材料或包含与将从设置在处理腔室内的溅射靶沉积在基板表面上的膜相同的材料。在一个实施方式中,涂覆层由至少是溅射靶材料的99.95%纯度的材料形成。涂覆层可以含有金属、金属氧化物、金属合金、磁性材料等,如以上参照图 2论述的。在一个实施方式中,涂覆层由钴或钴合金形成。将涂覆层沉积为具有约2μm至约35μm的厚度,例如约5μm至约25μm的厚度。
在方框306处,通过磨料喷射将涂覆层粗糙化至所需的纹理,磨料喷射可以包括例如喷珠、喷砂、喷苏打、喷粉末和其他微粒喷射技术。或者,可以通过另一种技术来将涂覆层纹理化,另一种技术例如但不限于湿蚀刻、干蚀刻和能量束纹理化等等。
在方框308处,在处理腔室内处理基板之前(即基板不存在于处理腔室中),将内表面上沉积有涂覆层的主体安装在处理腔室中。
本公开内容的益处包括可以有效减少基板表面上产生的污染物颗粒而不会明显增加处理或硬件成本的预涂覆屏蔽物。所述屏蔽物通过减少屏蔽物与溅射靶之间的发弧而有利地减少使用RF-PVD工艺沉积的膜中的颗粒污染物。发弧因屏蔽物的内表面上存在涂覆层而减少,屏蔽物设置成围绕腔室主体的处理空间。对涂覆层进行处理或喷珠以实质上防止颗粒(例如铝颗粒) 从屏蔽物剥落,否则会污染正被处理的基板。特别地,涂覆层包含与溅射靶或将形成在基板表面上的膜层相同的材料。因此,即使涂覆层材料在基板处理期间从屏蔽物剥落,基板表面的污染物仍被最小化。改良的屏蔽物已显示能够将基板表面上的铝污染物从5.9x1012原子/cm2减少到3.1x1010原子/cm2或更少。使用改良的屏蔽物的沉积工艺还显示,具有5:1或更高、例如约10:1 或更高、例如约50:1的高深宽比的小结构的阶梯覆盖有更高的底部覆盖率 (coverage)(例如在中心测量为70%或更高)和更少的突出部分(overhang)。
尽管前述内容针对本公开内容的实施方式,但在不脱离本公开内容的基本范围的情况下可设计本公开内容的其他和进一步的实施方式。
Claims (15)
1.一种在物理气相沉积处理腔室中使用的屏蔽物,包含:
中空主体,具有圆柱形状,所述圆柱形状大体上关于所述中空主体的中心轴对称,所述主体具有内表面和外表面;和
涂覆层,形成在所述主体的所述内表面上,所述涂覆层包含金属、金属氧化物、金属合金或磁性材料。
2.如权利要求1所述的屏蔽物,其中所述涂覆层由钴、硅化钴、镍、硅化镍、铂、钨、硅化钨、氮化钨、碳化钨、铜、铬、钽、氮化钽、碳化钽、钛、氧化钛、氮化钛、镧、锌、上述材料的合金、上述材料的硅化物、上述材料的衍生物、或上述材料的任意组合形成。
3.如权利要求1所述的屏蔽物,其中所述涂覆层由钴或钴合金形成。
4.如权利要求1所述的屏蔽物,其中所述主体由铝、不锈钢、氧化铝、氮化铝、或陶瓷、或上述材料的任意组合形成。
5.如权利要求4所述的屏蔽物,其中所述主体由铝形成,并且所述涂覆层由钴或钴合金形成。
6.如权利要求1所述的屏蔽物,其中所述涂覆层具有约2μm至约35μm的厚度。
7.一种在物理气相沉积处理腔室中使用的屏蔽物,所述屏蔽物包含延长的圆柱形主体,所述延长的圆柱形主体经构造以围绕在溅射靶与基板支撑件之间的处理空间并且保护所述处理腔室的侧壁免于沉积,而且所述主体由铝制成,其中的改良包含:
涂覆层,形成在所述延长的圆柱形主体的内表面上,其中所述涂覆层包含钴或钴合金。
8.如权利要求7所述的屏蔽物,其中所述涂覆层由与所述溅射靶相同的材料形成。
9.如权利要求7所述的屏蔽物,其中所述涂覆层具有约2μm至约35μm的厚度,并且所述涂覆层具有约80μin至约500μin的平均表面粗糙度。
10.如权利要求7所述的屏蔽物,其中所述主体包含:
第一环状腿;
第二环状腿,所述第二环状腿比所述第一环状腿相对更短;和
水平腿,在所述第一环状腿的下部将所述第二环状腿连接到所述第一环状腿,
其中所述第一环状腿的外表面没有所述涂覆层。
11.一种用于处理在物理气相沉积处理腔室中使用的屏蔽物的方法,所述屏蔽物包含延长的圆柱形主体,所述延长的圆柱形主体经构造以保护所述处理腔室的侧壁免于沉积,所述方法包含以下步骤:
在所述主体的内表面上沉积涂覆层,所述涂覆层包含金属、金属氧化物、金属合金或磁性材料。
12.如权利要求11所述的方法,其中所述主体由铝、不锈钢、氧化铝、氮化铝、或陶瓷、或上述材料的任意组合形成。
13.如权利要求11所述的方法,其中所述涂覆层由包含钴、硅化钴、镍、硅化镍、铂、钨、硅化钨、氮化钨、碳化钨、铜、铬、钽、氮化钽、碳化钽、钛、氧化钛、氮化钛、镧、锌、上述材料的合金、上述材料的硅化物、上述材料的衍生物、或上述材料的任意组合的材料形成。
14.如权利要求13所述的方法,其中所述涂覆层由钴或钴合金形成。
15.如权利要求14所述的方法,进一步包含以下步骤:
通过磨料喷射工艺将所述涂覆层粗糙化;和。
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PCT/US2016/060231 WO2017091334A1 (en) | 2015-11-24 | 2016-11-03 | Pre-coated shield for use in vhf-rf pvd chambers |
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EP (1) | EP3380643A4 (zh) |
JP (1) | JP2018535324A (zh) |
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CN (1) | CN108884559A (zh) |
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KR20180077291A (ko) | 2018-07-06 |
EP3380643A4 (en) | 2019-08-14 |
JP2018535324A (ja) | 2018-11-29 |
EP3380643A1 (en) | 2018-10-03 |
TW201734237A (zh) | 2017-10-01 |
US20170145553A1 (en) | 2017-05-25 |
WO2017091334A1 (en) | 2017-06-01 |
SG10202004443YA (en) | 2020-06-29 |
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