CN108878571A - A kind of stealthy detector based on hot carrier - Google Patents
A kind of stealthy detector based on hot carrier Download PDFInfo
- Publication number
- CN108878571A CN108878571A CN201810714214.3A CN201810714214A CN108878571A CN 108878571 A CN108878571 A CN 108878571A CN 201810714214 A CN201810714214 A CN 201810714214A CN 108878571 A CN108878571 A CN 108878571A
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- stealthy
- layer
- hot carrier
- detector based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 230000008859 change Effects 0.000 claims abstract description 5
- 238000005286 illumination Methods 0.000 claims abstract description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003574 free electron Substances 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 3
- 239000000523 sample Substances 0.000 abstract description 3
- 230000007723 transport mechanism Effects 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002070 nanowire Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000005619 thermoelectricity Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 230000010748 Photoabsorption Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
The invention discloses a kind of stealthy detector based on hot carrier, it includes matrix lines, successively vapor deposition has the first conductive layer, tunnel layer and the second conductive layer in matrix lines, electrode is equipped on first conductive layer and the second conductive layer, first conductive layer, tunnel layer and the second conductive layer generate electric current in illumination, method promise resonance is generated simultaneously does not change light field when detecting the light of specific wavelength.Stealthy detector based on hot carrier of the invention is based on hot carrier transport mechanism, and the first conductive layer and the second conductive layer are not only used as optical element, but also as electricity component, keep probe functionality highly integrated.It is based on method promise resonance mechanism simultaneously, successively be vapor-deposited the three-decker of the first conductive layer, tunnel layer and the second conductive layer in matrix lines, under the excitation of special wavelength light, its scattering efficiency is minimum, it can be realized and do not destroy or disturb ambient field while obtaining photoelectric information, realize that optical field of view is invisible.
Description
Technical field
The present invention relates to technical field of optical detection, in particular to a kind of stealthy detector based on hot carrier.
Background technique
Photodetector is a kind of opto-electronic device for converting optical signals to electric signal, not only in all of national economy
It is multi-field to play an important role, and occupy very important status in military and national defense.Traditional photodetector is general
It is that transporting and separating for electron-hole pair, Jin Ershi are regulated and controled based on the PN junction of semiconductor (such as silicon, GaAs) doping formation
Conversion of the existing optical signal to electric signal.But the response wave length of semiconductor photo detector is partly led dependent on material attribute itself
Body band gap, and it is not easily accomplished the flexible modulation to detection wavelength.Importantly, semiconductor photo detector is absorbing light wave
While it is strong to light scattering process, i.e., while realizing optical detection be difficult to realize optic camouflage.
Rarely have at present and be combined into one photodetection and optic camouflage, detecting technique and optic camouflage technology be basic
At discrete state.Due to the labyrinth of semiconductor detector, it is difficult for photodetection and stealth technology to be combined into one.And in essence
In terms of close scientific instrument, quantum information, civil investigation and national defense safety, to the detection stealthy tool of wavelength while realizing signal detection
There is extremely important realistic meaning.Therefore developing a kind of stealthy photodetector is extremely intractable and urgently to be resolved science and technology
Problem.
Summary of the invention
In view of the deficiencies of the prior art, it is an object of that present invention to provide one kind to be based on hot carrier, and it is complete to can be realized wide-angle
To stealthy detector.
A kind of stealthy detector based on hot carrier, including matrix lines, successively vapor deposition has the in the matrix lines
One conductive layer, tunnel layer and the second conductive layer are equipped with electrode on first conductive layer and the second conductive layer, and described first leads
Electric layer, tunnel layer and the second conductive layer generate electric current in illumination, while generating method promise resonance, in the light of detection specific wavelength
When, do not change light field.
As a further improvement of the present invention, first conductive layer, tunnel layer and the second conductive layer are generated in illumination
Electric current specifically includes：
After free electron in second conductive layer is optically excited, high level is transitted to, becomes thermoelectron, part thermoelectricity
Son crosses the tunnel layer and reaches first conductive layer, forms the first thermionic current；
After free electron in first conductive layer is optically excited, high level is transitted to, becomes thermoelectron, part thermoelectricity
Son crosses the tunnel layer and reaches second conductive layer, forms the second thermionic current；
It first thermionic current and the second thermionic current contrary and differs in size, forms unidirectional current output.
As a further improvement of the present invention, the photo absorption performance of second conductive layer is better than first conductive layer.
As a further improvement of the present invention, first conductive layer is metal layer.
As a further improvement of the present invention, first conductive layer is gold, silver, aluminium, tin indium oxide, graphene or class stone
Black alkene material.
As a further improvement of the present invention, second conductive layer is metal layer.
As a further improvement of the present invention, second conductive layer is gold, silver, aluminium, tin indium oxide, graphene or class stone
Black alkene material.
As a further improvement of the present invention, the matrix lines are transparent oxide, semiconductor simple substance or semiconductor
Compound.
As a further improvement of the present invention, the tunnel layer is aluminium oxide, zinc oxide, tantalum pentoxide, hafnium oxide.
As a further improvement of the present invention, second conductive layer thickness is 0.43nm-1000nm, the matrix lines
Diameter is 1nm-1000nm, first conductive layer with a thickness of 0.43nm-1000nm, the tunnel layer with a thickness of
0.43nm-50nm。
Beneficial effects of the present invention：
(1) the stealthy detector of the invention based on hot carrier is based on hot carrier transport mechanism, the first conductive layer
It is not only used as optical element with the second conductive layer, but also as electricity component, keeps probe functionality highly integrated, structure greatly simplifies.
(2) it is based on method promise resonance mechanism, first conductive layer that is successively vapor-deposited in matrix lines, tunnel layer and second are conductive
The three-decker of layer, under the excitation of special wavelength light, scattering efficiency is minimum, can be realized and is obtaining photoelectric information
Ambient field is not destroyed or disturbed simultaneously, realizes that optical field of view is invisible, or realizes multitask noiseless type superfinishing secret agent in situ
It surveys.
(3) for the stealthy measure of semiconductor nanowires covering unsymmetrical metal structure, the device architecture is symmetrical,
Light excitation orientation does not limit, and so as to realize that wide-angle omnidirectional is stealthy, the device metal structure is as photoelectric conversion core member
Part, while realizing that hot carrier transports the dual function with optical method promise resonance, function is more integrated.Hot carrier device pair
The tolerance level of environment temperature is also superior compared with semiconductor devices.
(4) symmetrical structure of its conformal cladding, compared to for unsymmetric structure, difficulty of processing is substantially reduced.
(5) it being different from and realizes stealthy utilized transform optics and simple scattering cancellation mechanism at present, clear principle is simple,
Time cost is low in terms of design difficulty, and influence factor controllability is strong, has a wide range of application.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects, features and advantages of the invention can
It is clearer and more comprehensible, it is special below to lift preferred embodiment, and cooperate attached drawing, detailed description are as follows.
Detailed description of the invention
Fig. 1 is the sectional view of the stealthy detector in the embodiment of the present invention based on hot carrier；
Fig. 2 is the optic camouflage schematic diagram based on method promise resonance；
Fig. 3 is radiating efficiency of the stealthy detector in different wave length light field in the embodiment of the present invention based on hot carrier
Figure；
Fig. 4 is scattering of the stealthy detector in two characteristic wavelength light fields in the embodiment of the present invention based on hot carrier
The angular spatial distribution map in section；
Fig. 5 is that two characteristic wavelength light fields are placing detector (w) and do not placing detector (w/o) in the embodiment of the present invention
The surface of intensity distribution.
Description of symbols：1, the second conductive layer；2, tunnel layer；3, the first conductive layer；4, matrix lines；5, first electrode；6,
Two electrodes.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings and specific examples, so that those skilled in the art can be with
It more fully understands the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
As shown in Figure 1, for the stealthy detector based on hot carrier in inventive embodiments, which includes matrix lines the
Two conductive layers 1, tunnel layer 2, the first conductive layer 3, matrix lines 4, the first conductive layer 3, tunnel layer 2 and the second conductive layer 1 successively gas
It is mutually deposited in matrix lines 4, specifically, the vapor deposition of the first conductive layer 3 is in matrix lines 4, tunnel layer 2 is vapor-deposited first
On conductive layer 3, the second conductive layer 1 is vapor-deposited on tunnel layer 2, and first electrode 5 is coated on the second conductive layer 1, and first is conductive
Second electrode 6 is coated on layer 3, first electrode 5 and second electrode 6 are used for connection electrode lead.
In the present embodiment, the second conductive layer 1 can be gold, silver, aluminium, tin indium oxide, graphene or class grapheme material
Equal metal materials.It is with a thickness of 0.43nm-1000nm.
Tunnel layer 2 is aluminium oxide, zinc oxide, tantalum pentoxide, hafnium oxide etc..Its thickness 0.43nm-50 nm.
First conductive layer 3 can be the metal materials such as gold, silver, aluminium, tin indium oxide, graphene or class grapheme material.Its
With a thickness of 0.43nm-1000nm.
Matrix lines 4 are transparent oxide such as ZnO, Si3N4, TiO2 etc., semiconductor simple substance such as Si, Ge etc., GaAs III-V
Race or V-VI race's semiconducting compound.A diameter of 1nm-1000nm.
Light source is irradiated on the second conductive layer 1, and the free electron in the second conductive layer 1 transits to high energy by photon excitation
Grade, becomes thermoelectron, and the hot hole of thermoelectron corresponding thereto is referred to as hot carrier, thermoelectron in the second conductive layer 1 from
By spreading, a portion diffuses to the interface of the second conductive layer 1 and tunnel layer 2, and crosses interface potential barrier and enter tunnel layer
2, then arrive at the first conductive layer 3.Above-mentioned thermionic motion process forms the first thermionic current；In first conductive layer 3
After thermoelectron, the free electron in the first conductive layer 3 can be excited to be optically excited, high level is transitted to, becomes thermoelectron, part
Thermoelectron crosses tunnel layer 2 and reaches the second conductive layer 1, forms the second thermionic current；Above-mentioned first thermionic current and the second thermoelectricity
It subflow contrary and differs in size, i.e., forms unidirectional current output between the first conductive layer 3 and the second conductive layer 1, i.e.,
Optical detection can be achieved.
In light and special micro-nano structure interaction process, if exciting a kind of wide range resonance and a kind of narrow spectrum simultaneously altogether
Vibration can show asymmetric line style in its scattering spectra or delustring spectral line, be claimed then this two kinds of resonance modes intercouple
For method promise resonance.In spectral line with method promise resonance effects, scattering/delustring peak of corresponding wide range resonance, radiation loss is big, radiation
Intensity is high, referred to as bright mould；Scattering/delustring paddy of corresponding narrow spectrum resonance, radiation intensity is low, is not easy to detect, referred to as dark mould.Bright mould and
The internal mechanism of dark mould also tends to the dipole formed with charge density distribution to be illustrated.
As shown in Figs. 1-2, D1 is the dipole moment one that 3 distribution of charges of the first conductive layer is formed, and D2 is 1 charge of the second conductive layer
It is distributed the dipole moment two ("+" "-" respectively indicates positive charge and negative electrical charge distribution in figure) formed, when D1 with D2 size is identical and square
To on the contrary, then total dipole moment and be zero, scattering strength zero represents a kind of dark-state, 1 position of wavelength X in corresponding diagram 2；When
D1 with D2 size is identical and direction is identical, then total dipole moment and be maximum, and scattering strength is also maximum, is represented a kind of bright
State, 2 position of wavelength X in corresponding diagram 2, wavelength X 1 and λ 2 are known as two characteristic wavelengths.
As shown in figure 3, being the stealthy detector based on hot carrier in the embodiment of the present invention in different wave length light field
Radiating efficiency figure, wherein abscissa is wavelength X, and ordinate is Scattering efficiency factor Qscat.
Wherein, matrix lines 4 are ZnO nano-wire, and the first conductive layer 3 is transparent electrode ITO, and tunnel layer 2 is alumina layer,
Second conductive layer 1 is layer gold, and ZnO nano-wire diameter is 150nm, ITO layer with a thickness of 30nm, Al2O3 layers with a thickness of 5nm, Au layers
With a thickness of 30nm.First conductive layer 3 uses transparent electrode ITO, and light absorption is very small, therefore, the second thermionic current of generation
It is extremely faint, to realize that asymmetrical beam absorbs and unidirectional current exports.It can be seen from the figure that wavelength 885nm and 935nm points
The minimum and maximum of its scattering strength are not corresponded to, and wavelength 885nm and 935nm are two characteristic wavelengths.
As shown in figure 4, being the stealthy detector based on hot carrier in the embodiment of the present invention in two characteristic wavelength light fields
In the angular spatial distribution map of scattering section, wherein dotted line indicates scattering section of the detector in wavelength X=935nm light field
Angular spatial distribution, solid line indicate scattering section angular spatial distribution of the detector in wavelength X=885nm light field.From figure
As can be seen that detector is far smaller than the scattering in wavelength X=935nm light field in the scattering section in wavelength X=885nm light field
Section.
As shown in figure 5, placing detector (w) for two characteristic wavelength light fields in the embodiment of the present invention and not placing detection
The surface of intensity distribution of device (w/o).Wherein, Fig. 5 (a) is wavelength X=885nm, and Fig. 5 (b) is wavelength X=935nm.It can from figure
Light field (w) phase after light field ambient field (w/o) and placement to find out, in wavelength X=885nm, before placement detector
Compare, almost without any slight change, i.e. detector itself has implemented good stealth effect, which is derived from method promise
Secretly imitating for resonance is answered, and minimum scattering section is shown as.And in wavelength X=935nm, place the light field back before detector
Jing Chang (w/o) compares with the light field (w) after placing, and the placement of detector has more apparent influence to light field around.
Therefore, the present invention is based on the stealthy detectors of hot carrier may be implemented when detecting the light of specific wavelength, not right
Light field has an impact, to realize the stealthy of detector itself, and can be by changing the second conductive layer 1, tunnelling in detector
The material and thickness of the 2, first conductive layer 3 of layer change material and the diameter of matrix lines 4 to adjust characteristic wavelength, meet detection not
The demand of co-wavelength light.
Beneficial effects of the present invention：
(1) the stealthy detector of the invention based on hot carrier is based on hot carrier transport mechanism, the first conductive layer
It is not only used as optical element with the second conductive layer, but also as electricity component, keeps probe functionality highly integrated, structure greatly simplifies.
(2) it is based on method promise resonance mechanism, first conductive layer that is successively vapor-deposited in matrix lines, tunnel layer and second are conductive
The three-decker of layer, under the excitation of special wavelength light, scattering efficiency is minimum, can be realized and is obtaining photoelectric information
Ambient field is not destroyed or disturbed simultaneously, realizes that optical field of view is invisible, or realizes multitask noiseless type superfinishing secret agent in situ
It surveys.
(3) for the stealthy measure of semiconductor nanowires covering unsymmetrical metal structure, the device architecture is symmetrical,
Light excitation orientation does not limit, and so as to realize that wide-angle omnidirectional is stealthy, the device metal structure is as photoelectric conversion core member
Part, while realizing that hot carrier transports the dual function with optical method promise resonance, function is more integrated.Hot carrier device pair
The tolerance level of environment temperature is also superior compared with semiconductor devices.
(4) symmetrical structure of its conformal cladding, compared to for unsymmetric structure, difficulty of processing is substantially reduced.
(5) it being different from and realizes stealthy utilized transform optics and simple scattering cancellation mechanism at present, clear principle is simple,
Time cost is low in terms of design difficulty, and influence factor controllability is strong, has a wide range of application.
Above embodiments are only to absolutely prove preferred embodiment that is of the invention and being lifted, and protection scope of the present invention is not
It is limited to this.Those skilled in the art's made equivalent substitute or transformation on the basis of the present invention, in guarantor of the invention
Within the scope of shield.Protection scope of the present invention is subject to claims.
Claims (10)
1. a kind of stealthy detector based on hot carrier, it is characterised in that：Including matrix lines, successively gas phase in the matrix lines
It is deposited with the first conductive layer, tunnel layer and the second conductive layer, is equipped with electrode on first conductive layer and the second conductive layer, institute
It states the first conductive layer, tunnel layer and the second conductive layer and generates electric current in illumination, while generating method promise resonance, in detection certain wave
When long light, do not change light field.
2. the stealthy detector based on hot carrier as described in claim 1, which is characterized in that first conductive layer, tunnel
It wears layer and the second conductive layer generates electric current in illumination, specifically include：
After free electron in second conductive layer is optically excited, high level is transitted to, becomes thermoelectron, part thermoelectron is got over
It crosses the tunnel layer and reaches first conductive layer, form the first thermionic current；
After free electron in first conductive layer is optically excited, high level is transitted to, becomes thermoelectron, part thermoelectron is got over
It crosses the tunnel layer and reaches second conductive layer, form the second thermionic current；
It first thermionic current and the second thermionic current contrary and differs in size, forms unidirectional current output.
3. the stealthy detector based on hot carrier as described in claim 1, which is characterized in that the suction of second conductive layer
Optical property is better than first conductive layer.
4. the stealthy detector based on hot carrier as described in claim 1, which is characterized in that first conductive layer is gold
Belong to layer.
5. the stealthy detector based on hot carrier as claimed in claim 4, which is characterized in that first conductive layer is
Gold, silver, aluminium, tin indium oxide, graphene or class grapheme material.
6. the stealthy detector based on hot carrier as described in claim 1, which is characterized in that second conductive layer is gold
Belong to layer.
7. the stealthy detector based on hot carrier as claimed in claim 6, which is characterized in that second conductive layer is
Gold, silver, aluminium, tin indium oxide, graphene or class grapheme material.
8. the stealthy detector based on hot carrier as described in claim 1, which is characterized in that the matrix lines are
Bright oxide, semiconductor simple substance or semiconducting compound.
9. the stealthy detector based on hot carrier as described in claim 1, which is characterized in that the tunnel layer is oxidation
Aluminium, zinc oxide, tantalum pentoxide, hafnium oxide.
10. the stealthy detector based on hot carrier as described in claim 1, which is characterized in that the described second conductive thickness
Degree is 0.43nm-1000nm, and the diameters of the matrix lines is 1nm-1000nm, first conductive layer with a thickness of 0.43nm-
1000nm, the tunnel layer with a thickness of 0.43nm-50nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810714214.3A CN108878571B (en) | 2018-06-29 | 2018-06-29 | Stealth detector based on hot carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810714214.3A CN108878571B (en) | 2018-06-29 | 2018-06-29 | Stealth detector based on hot carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108878571A true CN108878571A (en) | 2018-11-23 |
| CN108878571B CN108878571B (en) | 2020-05-01 |
Family
ID=64296754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810714214.3A Active CN108878571B (en) | 2018-06-29 | 2018-06-29 | Stealth detector based on hot carrier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108878571B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444314A (en) * | 2019-08-12 | 2019-11-12 | 苏州大学 | A kind of light control system and light control method based on graphene |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040252957A1 (en) * | 2003-06-16 | 2004-12-16 | The Regents Of The University Of California | Apparatus for optical measurements on low-index non-solid materials based on arrow waveguides |
| US20080278728A1 (en) * | 2005-10-21 | 2008-11-13 | Kevin Tetz | Optical Sensing Based on Surface Plasmon Resonances in Nanostructures |
| US20150303341A1 (en) * | 2014-04-21 | 2015-10-22 | Aaron Richard Allen | Multiple layer charge-coupled photovoltaic device |
| CN107356558A (en) * | 2017-08-28 | 2017-11-17 | 兰州大学 | Micro-nano optical detection device and optical detection system |
-
2018
- 2018-06-29 CN CN201810714214.3A patent/CN108878571B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040252957A1 (en) * | 2003-06-16 | 2004-12-16 | The Regents Of The University Of California | Apparatus for optical measurements on low-index non-solid materials based on arrow waveguides |
| US20080278728A1 (en) * | 2005-10-21 | 2008-11-13 | Kevin Tetz | Optical Sensing Based on Surface Plasmon Resonances in Nanostructures |
| US20150303341A1 (en) * | 2014-04-21 | 2015-10-22 | Aaron Richard Allen | Multiple layer charge-coupled photovoltaic device |
| CN107356558A (en) * | 2017-08-28 | 2017-11-17 | 兰州大学 | Micro-nano optical detection device and optical detection system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444314A (en) * | 2019-08-12 | 2019-11-12 | 苏州大学 | A kind of light control system and light control method based on graphene |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108878571B (en) | 2020-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kunwar et al. | Improved photoresponse of UV photodetectors by the incorporation of plasmonic nanoparticles on GaN through the resonant coupling of localized surface plasmon resonance | |
| CN107482072B (en) | Graphene-based wavelength selective photodetector with sub-band gap detection capability | |
| Zou et al. | Piezo‐phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis–NIR Broadband Photodiode | |
| Zhang et al. | Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact | |
| Pillai et al. | Enhanced emission from Si-based light-emitting diodes using surface plasmons | |
| Zhang et al. | A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction | |
| US8415758B2 (en) | Optoelectronic devices utilizing materials having enhanced electronic transitions | |
| Decoster et al. | Optoelectronic sensors | |
| Armstrong et al. | GaN nanowire surface state observed using deep level optical spectroscopy | |
| Xu et al. | Graphene GaN-based Schottky ultraviolet detectors | |
| Hodgson et al. | Enhancing blue photoresponse in CdTe photovoltaics by luminescent down-shifting using semiconductor quantum dot/PMMA films | |
| Huang et al. | Distributed Bragg reflector assisted low-threshold ZnO nanowire random laser diode | |
| Gong et al. | Aluminum-based hot carrier plasmonics | |
| Hu et al. | Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage | |
| Ghods et al. | Plasmonic enhancement of photocurrent generation in two-dimensional heterostructure of WSe2/MoS2 | |
| Yang et al. | High sensitivity graphene-Al2O3 passivated InGaAs near-infrared photodetector | |
| Guo et al. | Surface/interface carrier-transport modulation for constructing photon-alternative ultraviolet detectors based on self-bending-assembled ZnO nanowires | |
| CN108878571A (en) | A kind of stealthy detector based on hot carrier | |
| Li et al. | Charge collection in h-BN neutron detectors at elevated temperatures | |
| Liu et al. | Photoinduced surface voltage mapping study for large perovskite single crystals | |
| Zhan et al. | Coaxial Ag/ZnO/Ag nanowire for highly sensitive hot-electron photodetection | |
| Rao et al. | Large-scale fabrication of CMOS-compatible silicon-OLED heterojunctions enabled infrared upconverters | |
| KR20210136452A (en) | Substrate for photodetector comprising AgAu alloy nanoparticles and UV photodetector based on GaN using the same | |
| Thouti et al. | Enhancement of minority carrier lifetimes in n-and p-type silicon wafers using silver nanoparticle layers | |
| Lu et al. | Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |