CN108878499A - Full-color array of display structure and preparation method - Google Patents
Full-color array of display structure and preparation method Download PDFInfo
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- CN108878499A CN108878499A CN201810762715.9A CN201810762715A CN108878499A CN 108878499 A CN108878499 A CN 108878499A CN 201810762715 A CN201810762715 A CN 201810762715A CN 108878499 A CN108878499 A CN 108878499A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Abstract
The full-color display structure and preparation method that the present invention provides a kind of blue-ray LEDs to combine with green light, feux rouges OLED, LED is shown that the advantage shown with OLED combines and realizes full-color display, both green LED low efficiency had been solved, the GaAs material system of red-light LED is difficult the problems such as compatible with the GaN material system of blue and green light LED, and solves the problems, such as that blue light emitting light efficiency is low, the service life is short during OLED is shown.
Description
Technical field
The present invention relates to field of photoelectric technology, in particular to full-color array of display structure that a kind of LED is combined with OLED
And preparation method.
Background technique
LED (Light-Emitting Diode, electroluminescent diode) display technology and OLED (Organiclight-
Emitting Diode, organic electroluminescent LED) display technology widely paid close attention in plate field of information display.
Two kinds of technologies all have the advantages that self-luminous, high brightness, high contrast, wide viewing angle, operating temperature range big and high reliability.But
It is that on realizing the targets such as higher efficiency, higher-definition, more high definition, two kinds of technologies suffer from the defect of itself.
For LED display technique, realizes that the key technology that more high definition is shown is to realize extra small light emitting pixel, need smaller ruler
Very little LED RGB full-color light-emitting unit.Currently, LED full-color light-emitting unit mainly uses two kinds of packaged types of SMD or COB to realize,
The two is required to carry out die bond, routing or flip chip bonding to three kinds of LED chips of red, green, blue.Since solder process, bonder align
The limitation in precision and conductive through hole aperture is restricted so that the full-color encapsulation unit of LED RGB is compact in size, directly affects
To final LED screen pixel resolution.Also, high-resolution, large scale display screen need more LED chips, by substantial amounts,
Small-sized LED chip carries out attachment and needs huge time and economic cost.Furthermore the luminous efficiency of green light LED is lower,
The GaAs material system of red-light LED is difficult the problems such as compatible always dramatically with the GaN material system of blue and green light LED
Influence that LED Display Realization is full-color and high-resolution.
And for OLED display technology, the performance of blue light organic luminescent material is relatively low at present, and luminous efficiency and service life are lower,
It is easy aging, greatly influences the color rendition degree and service life of the full-color display of OLED.
Therefore, realize that full color flat panel show if blue-ray LED is combined with green light, feux rouges OLED, LED can be shown and
The advantage that OLED is shown combines, and realizes more excellent efficiency, higher-definition, higher resolution.LED and OLED belongs to low current drive
It is dynamic, there is fabulous compatibility in terms of driving circuit
Summary of the invention
(1) technical problems to be solved
The present invention provides a kind of full-color array of display structure and preparation method that LED is combined with OLED, by LED show with
The advantage that OLED is shown combines, and has both solved green LED low efficiency, the GaAs material system and blue and green light of red-light LED
The GaN material system of LED is difficult the problems such as compatible, and solves the problems, such as that blue light emitting light efficiency is low, the service life is short during OLED is shown.
(2) technical solution
The present invention provides a kind of full-color array of display, including：
Transparent substrates 1；
Blue-ray LED array is formed in the transparent substrates 1, by multiple independent bar shaped blue light LED structures by column row
The LED pixel of cloth, each column blue light LED structure realizes the interconnection of cathode electricity by LED N electrode and column data line electrode 8；
Green light OLED array is formed in the transparent substrates 1, by multiple independent bar shaped green light OLED structures by column row
The OLED pixel of cloth, each column green light OLED structure realizes the interconnection of cathode electricity by OLED N electrode and column data line electrode 8 '；
Feux rouges OLED array is formed in the transparent substrates 1, by multiple independent bar shaped feux rouges OLED structures by column row
The OLED pixel of cloth, each column feux rouges OLED structure realizes the interconnection of cathode electricity by OLED N electrode and column data line electrode 8 '；
The LED P electrode of blue-ray LED array and transparent the leading of row control line electrode 7 and the green light, feux rouges OLED array
Electric layer 5 realizes electric interconnection, each column blue light LED structure, and green light OLED structure and feux rouges OLED structure form a full-color display of RGB
Pixel.
Optionally, blue light LED structure includes μ-GaN layer, n-GaN layers of 2-1, multi-quantum well luminescence layer 2-2 and p-GaN layer 2-
3。
Optionally, the sub-pixel periphery of green light OLED array and feux rouges OLED array be formed with grid-shaped two-layer cathode every
From column 3-4, including bottom insulated column and upper layer insulated column, wherein bottom insulated column is positive trapezoidal shape, and upper layer insulated column is to fall
Trapezoidal shape.
The present invention provides a kind of preparation method of full-color array of display, including：
Step A：The growth GaN material in transparent substrates 1 prepares GaN epitaxy piece；
Step B：GaN epitaxy piece is etched, multiple independent bar shaped blue light LED structures are formed, forms blue-ray LED region 2；
Step C：ICP mesa etch is carried out to multiple independent bar-shaped LED structures, obtains independent blue light LED structure；
Step D：Transparency conducting layer 5 is prepared on the P table top of blue light LED structure, while in the region green light OLED 3 and feux rouges
Also transparency conducting layer 5 is prepared on the region OLED 4；
Step E：The N electrode and column data line electrode 8, blue-ray LED DBR reflection of blue-light LED chip are made on n-GaN
Layer, and insulation protection is carried out to N electrode；
Step F：The P electrode and row for making blue-light LED chip control line electrode 7 and carry out insulation protection to it；
Step G：Make cathode insulated column 3-4；
Step H：Each functional layer of green, red OLED array is made, and realizes the cathode of each column green light or feux rouges OLED pixel
Electricity interconnection；
Step I：Encapsulation.
The present invention provides a kind of full-color display structure, including：
Circuit substrate 10, multiple pixel regions including array arrangement；
2 ' of blue-ray LED device, is made of LED chip, is formed on circuit substrate 10 by column；
4 ' of 3 ' of green light OLED device and feux rouges OLED device, is formed on the circuit substrate 10 by column；
2 ' of blue-ray LED device, 3 ' of green light OLED device and 4 ' of feux rouges OLED device are realized electric mutual by circuit substrate 10
Connection.
Optionally, it is provided in pixel region and 2 ' of blue-ray LED device, 3 ' of green light OLED device, 4 ' of feux rouges OLED device
The pixel-driving circuit being connected.
The present invention provides a kind of preparation method of full-color display structure, including：
Step A：Blue-light LED chip is prepared on a sapphire substrate, is packaged into blue-ray LED device 2'；
Step B：Prepare 4 ' of 3 ' of green light OLED device and feux rouges OLED device；
Step C：2 ' of blue-ray LED device, 3 ' of OLED device and 4 ' of feux rouges OLED device are bonded to circuit substrate 10 respectively
On；
Step D：To circuit substrate 10 plus driving current, full-color display is realized.
The present invention provides a kind of full-color display structure, including：
Circuit substrate 10, multiple pixel regions including array arrangement；
2 ' of blue-ray LED device, is made of LED chip, is formed on circuit substrate 10 by column；
Green light, feux rouges OLED array, are formed on circuit substrate 10 by column；
2 ' of blue-ray LED device and green light, feux rouges OLED array pass through circuit substrate 10 and realize electric interconnection.
Optionally, the pixel being connected with 2 ' of blue-ray LED device, green light, feux rouges OLED array is provided in pixel region
Driving circuit.
The present invention provides a kind of preparation method of full-color display structure, including：
Step A：Transparency conducting layer 5 is sputtered on 10 surface of circuit substrate, is formed by etching green light, feux rouges OLED region
Anode, meanwhile, cathode insulated column 3-4 is prepared on transparency conducting layer 5；
Step B：2 ' of blue-ray LED device is connect with circuit substrate 10；
Step C：Green light, feux rouges OLED array are prepared on circuit substrate；
Step D：Encapsulation；
Step E：To circuit substrate 10 plus driving current, full-color display is realized.
(3) beneficial effect
The full-color display structure and preparation method that the present invention provides blue-ray LEDs to combine with feux rouges, green light OLED, have
Following beneficial effect：
1, LED is shown that the advantage shown with OLED combines, solves green LED low efficiency, red-light LED
GaAs material system is difficult the problems such as compatible with the GaN material system of blue and green light LED；
2, solve the problems, such as that blue light emitting light efficiency is low, the service life is short during OLED is shown.
Detailed description of the invention
Fig. 1 is full-color array of display structural schematic diagram of the wafer scale LED in conjunction with OLED in embodiment 1.
Fig. 2 is cross-sectional view of full-color array of display of wafer scale all-colour LED shown in Fig. 1 in conjunction with OLED along the section AA '.
Blue-ray LED device and green light OLED device, feux rouges OLED device, which combine, in Fig. 3 embodiment 2 realizes full-color display
Structural schematic diagram.
Fig. 4 is blue-ray LED device architecture schematic diagram in Fig. 3；
Fig. 5 is green light in Fig. 3, feux rouges OLED device structural schematic diagram；
Fig. 6 is that blue-ray LED device combines the full-color display of realization with green light OLED, feux rouges OLED array in embodiment 3
Structural schematic diagram.
【Main element】
1- substrate 2- blue-ray LED region
2 '-blue-ray LED device 3- green light LED region
3 '-green light LED device 4- red-light LED region
4 '-red-light LED device 5- transparency conducting layer (ITO)
6- glass plate 7-LED P electrode and row control line electrode
8-LED N electrode and column control line electrode
8 '-OLED N electrodes and column control line electrode
9- whole-color display unit 10- circuit substrate
- GaN+n-GaN layers of 2-2- multi-quantum well luminescence layer (MQW) of 2-1- μ
The 2-3-p-GaN layers of reflecting layer 2-4-DBR+SiO2Film
2-5-P electrode 2-6-N electrode
3-1- hole transmission layer 3-2- electron transfer layer
3-3- solidification glue 3-4- cathode insulated column
3-5-Al electrode 3-6- gold goal
3-7- insulating layer 3-8- organic luminous layer
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
Embodiment 1
Please refer to attached drawing 1, attached drawing 2.
The present embodiment provides a kind of array of display that wafer scale LED is combined with OLED, which includes transparent lining
Bottom 1, blue-ray LED array, green light OLED array and feux rouges OLED array.
Blue-ray LED array is formed in the transparent substrates 1, by multiple independent bar shaped blue light LED structures by column arrangement
Blue-ray LED region 2, each column blue light LED structure are divided into multiple pixel regions, are prepared with LED on the N-GaN layer of each pixel region
N electrode is simultaneously interconnected by column data line, and LED pixel realizes the interconnection of cathode electricity by LED N electrode and column data line electrode 8.
Green light OLED array is formed in the transparent substrates 1, by multiple independent bar shaped green light OLED structures by column row
For cloth in the region green light OLED 3, the OLED pixel of each column green light OLED structure is real by OLED N electrode and column data line electrode 8 '
Existing cathode electricity interconnection；
Feux rouges OLED array is formed in the transparent substrates 1, by multiple independent bar shaped feux rouges OLED structures by column row
The OLED pixel in the region cloth feux rouges OLED 4, each column feux rouges OLED structure is realized by OLED N electrode and column data line electrode 8 '
The interconnection of cathode electricity；
The LED P electrode of the blue-ray LED array and row control line electrode 7 and the green light, feux rouges OLED array it is saturating
Bright conductive layer 5 realizes electric interconnection, and each column blue light LED structure, green light OLED structure and one RGB of feux rouges OLED structure composition are full-color
Display pixel.
The present embodiment provides a kind of preparation methods of array of display that wafer scale LED is combined with OLED, including：
Step A：The growth GaN material in transparent substrates 1 prepares GaN epitaxy piece.Growth GaN material uses the prior art
Method, typical method are：Using the method for Metallo-Organic Chemical Vapor deposition (MOCVD),It is successively grown in transparent substrates 1
μ-GaN layer and n-GaN layers of 2-1, multi-quantum well luminescence layer 2-2 and p-GaN layer 2-3 form GaN epitaxy piece；
Step B：Inductively coupled plasma (ICP) deep etching process is carried out to GaN epitaxy piece, in GaN epitaxy on piece shape
At multiple independent bar shaped blue light LED structures, blue-ray LED region 2 is formed；
Step B have including：
Sub-step B1：SiO is deposited using plasma enhanced chemical vapour deposition (PECVD) in GaN epitaxy on piece2It is thin
Film, the exposure mask as ICP deep etching；
Sub-step B2：In SiO2Photoresist, photoetching corrosion SiO are applied on film2, expose the post position of ICP deep etching,
GaN epitaxy piece is divided into the position of multiple independent bar shaped blue light LED structures and reserved green light, feux rouges OLED by runway；
The multiple independent bar-shaped LED structures formed via ICP deep etching are on entire substrate by the neat arrangement of column；
Step C：ICP mesa etch is carried out to multiple independent bar-shaped LED structures.Each independent item is etched using ICP
One side position of shape LED structure and by each bar-shaped LED segmentation of structures, etch away the p-GaN 2-3 and Quantum Well 2-2 of side with
And part n-GaN2-1, mesa structure is formed, thus to obtain independent blue light LED structure；
Step D：Transparency conducting layer 5 is sputtered, is prepared on the P table top of blue light LED structure by photoetching and etching process thoroughly
Bright conductive layer 5, while transparency conducting layer 5 is also prepared on the region green light OLED 3 and the region feux rouges OLED 4；
Step E：The LED N electrode and column data line electrode 8, the reflecting layer blue-ray LED DBR of blue-ray LED array are made, and
Insulation protection is carried out to N electrode；
Step E is specifically included：
Sub-step E1：Select the negative photoresist data line of photoetching N electrode and blue light pixel array of display electricity on N-GaN
Pole；Using electron beam evaporation method evaporation metal, LED N electrode and column data line electrode 8 are formed after removing；
Sub-step E2：The reflecting layer DBR and SiO are deposited using PECVD2Film 2-4 carries out each independent blue-ray LED
Side wall is protected and is insulated to N electrode.Photoetching corrosion falls green light, DBR and SiO in red light region2.On LED P table top
Aperture, to realize that the P electrode of blue-ray LED is contacted with p-GaN；
Step F：The LED P electrode and row for making blue-ray LED array control line electrode 7 and carry out insulation protection to it；
Step F is specifically included：
Sub-step F1：Select negative photoresist in photoetching P electrode and the control line electrode of full-color array of display；Using electronics
Beam evaporation method evaporation metal, after removing formed LED P electrode and row control line electrode 7, LED P electrode and control line electrode 7 and
Green light, feux rouges OLED transparency conducting layer 5 realize electric interconnection；
Step G：Make cathode insulated column 3-4.Using PI and negative photoresist in the region green light OLED 3 and the area feux rouges OLED
Sub-pixel periphery in domain 4 prepares grid-shaped bilayer insulated column, and bottom insulated column prepares 1um thickness trapezoid shape using Photosensitive PI
Shape, upper layer insulated column are prepared into the reverse trapezoid shape of 2um thickness using negative photoresist；
Step H:The functional layer that green, red OLED is sequentially formed by vapor deposition or printing technology (wherein at least includes that hole passes
Defeated layer 3-1, green light or feux rouges organic luminous layer 3-8 and electron transfer layer 3-2) and OLED N electrode and column data line electrode 8 ',
And realize the cathode electricity interconnection of each column green light or feux rouges OLED pixel.Fine Mask plate is utilized in vapor deposition or printing process,
The green light or feux rouges pixel region that the aperture of Mask plate can be aligned；
Step I：Glass-encapsulated cover board 6 is passed in the glove box full of inert gas through over cleaning and drying, is being served as a contrast
Bottom surrounding applies UV packaging plastic 3-3, and substrate and glass cover-plate 6 are aligned, pressed, UV solidifies.
Embodiment 2
Referring to Fig. 3, Fig. 4, Fig. 5
The present embodiment provides a kind of blue-ray LED discrete component and green light, feux rouges OLED discrete component combine realize it is full-color
Show structure, including：Circuit substrate 10, blue-ray LED device 2 ' are arranged in blue-ray LED region 2 by column, green light OLED device 3 ',
It is arranged in the region green light OLED by column, feux rouges OLED device 4 ' is arranged in the region feux rouges OLED, the blue-ray LED device by column
2 ', 3 ' of green light OLED device and 4 ' of feux rouges OLED device realize electric interconnection by circuit substrate 10；
Wherein, the circuit substrate 10 includes multiple pixel regions of array arrangement, setting in each blue light pixel region
There is the pixel-driving circuit being connected with blue-ray LED, is provided in each green light, feux rouges pixel region and green light, feux rouges OLED
The pixel-driving circuit being connected.
The present embodiment provides a kind of blue-ray LED discrete component and green light, feux rouges OLED discrete component combine realize it is full-color
Show the preparation method of structure, including：
Step A：The positive cartridge chip of blue-ray LED is prepared on a sapphire substrate, and it is blue to be packaged into discrete LED using SMD method
Optical device 2 '.Alternatively, preparing blue-ray LED flip-chip on a sapphire substrate, it is packaged into LED blue-light device 2 ', such as Fig. 4 institute
Show.
Step B：Organic film material (hole transport is deposited or printed on the transparency conducting layer 5 separated by insulating layer 3-7
Layer 3-1, green light or feux rouges organic luminous layer 3-8 and electron transfer layer 3-2) and Al electrode 3-5, upper glass plates 6 are covered,
It is encapsulated under high pure nitrogen environment using UV glue, forms discrete OLED green device 3 ' and OLED red device 4 ', as shown in Figure 5；
Step C：Blue-ray LED device 2 ', green light OLED device 3 ', feux rouges OLED device 4 ' are passed through into flip chip method respectively
Or reflow soldering process is bonded on circuit substrate 10, is arranged into array format.Wherein, blue-ray LED device, green light OLED device,
Feux rouges OLED device forms the full-color display pixel 9 of a RGB；
Step D：To circuit substrate 10 plus driving current, full-color display is realized.
Embodiment 3
Please refer to Fig. 6.
The present embodiment provides the full-color display knots that a kind of blue-ray LED discrete component is combined with green light, feux rouges OLED array
Structure, including：Circuit substrate 10, blue-ray LED device 2 ', by column distribution in blue-ray LED region 2, green light OLED array, by column distribution
In the region green light OLED 3, feux rouges OLED array, by column distribution in the region feux rouges OLED 4,2 ' of blue-ray LED device and green light,
Feux rouges OLED array realizes electric interconnection by circuit substrate 10.
Wherein, the circuit substrate 10 includes multiple pixel regions of array arrangement, setting in each blue light pixel region
There is the pixel-driving circuit being connected with blue-ray LED, is provided in each green light, feux rouges pixel region and green light, feux rouges OLED
The pixel-driving circuit being connected.
The present embodiment provides the full-color display knots that a kind of blue-ray LED discrete component is combined with green light, feux rouges OLED array
The preparation method of structure, including：
Step A：Transparency conducting layer 5 is sputtered on 10 surface of circuit substrate, is then formed by etching green light, the area feux rouges OLED
The anode in domain, meanwhile, cathode insulated column 3-4 is prepared on transparency conducting layer 5；
Step B：On blue-ray LED region 2, by blue-ray LED discrete device it is (as shown in Figure 4) by die bond routing technique or
Flip Chip Bond Technique electrode connection corresponding with circuit substrate blueing sub-pixels region；
Step C：The region green light OLED 3, the area feux rouges OLED are successively deposited by vapor deposition or printing technology and mask exposure mask
The organic film material (hole transmission layer 3-1, green light or feux rouges organic luminous layer 3-8 and electron transfer layer 3-2) in domain 4 and
Fine Mask plate is utilized in vapor deposition or printing process in Al electrode 3-5, and the aperture of Mask plate can be green on alignment circuit substrate
Light or feux rouges pixel region；
Step D:Glass-encapsulated cover board 6 is passed in the glove box full of inert gas through over cleaning and drying, in electricity
10 surrounding of base board applies UV packaging plastic 3-3, and circuit substrate 10 and glass cover-plate 6 are aligned, pressed, UV solidifies；
Step E：To circuit substrate 10 plus driving current, full-color display is realized.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of full-color array of display, including：
Transparent substrates (1)；
Blue-ray LED array is formed on the transparent substrates (1), is arranged by multiple independent bar shaped blue light LED structures by column,
The LED pixel of each column blue light LED structure realizes the interconnection of cathode electricity by LED N electrode and column data line electrode (8)；
Green light OLED array is formed on the transparent substrates (1), by multiple independent bar shaped green light OLED structures by column row
The OLED pixel of cloth, each column green light OLED structure realizes the interconnection of cathode electricity by OLED N electrode and column data line electrode (8 ')；
Feux rouges OLED array is formed on the transparent substrates (1), by multiple independent bar shaped feux rouges OLED structures by column row
The OLED pixel of cloth, each column feux rouges OLED structure realizes the interconnection of cathode electricity by OLED N electrode and column data line electrode (8 ')；
The LED P electrode of the blue-ray LED array and row control line electrode (7) and the green light, feux rouges OLED array it is transparent
Conductive layer (5) realizes electricity interconnection.
2. full-color array of display as described in claim 1, which is characterized in that the blue light LED structure includes μ-GaN layer+n-
GaN layer (2-1), multi-quantum well luminescence layer (2-2) and p-GaN layer (2-3).
3. full-color display structure as described in claim 1, which is characterized in that in the green light OLED array and OLED gusts of feux rouges
The sub-pixel periphery of column is formed with grid-shaped two-layer cathode insulated column (3-4), including bottom insulated column and upper layer insulated column,
In, the bottom insulated column is positive trapezoidal shape, and upper layer insulated column is reverse trapezoid shape.
4. a kind of preparation method of full-color array of display, including：
Step A：GaN epitaxy piece is prepared on transparent substrates (1)；
Step B：GaN epitaxy piece is etched, multiple independent bar shaped blue light LED structures are formed, is formed blue-ray LED region (2)；
Step C：ICP mesa etch is carried out to multiple independent bar-shaped LED structures, obtains independent blue light LED structure；
Step D：It is prepared on the P table top of blue light LED structure transparency conducting layer (5), meanwhile, in the region green light OLED (3) and red
Transparency conducting layer (5) are prepared on the region light OLED (4)；
Step E：The LED N electrode and column data line electrode (8), the reflecting layer blue-ray LED DBR of blue-ray LED array are made, and to N
Electrode carries out insulation protection；
Step F：The LED P electrode and row control line electrode (7) of blue-ray LED array are made, and insulation protection is carried out to it；
Step G：It makes cathode insulated column (3-4)；
Step H：The functional layer of green, red OLED array is made, and realizes the cathode electricity interconnection of each column green light or feux rouges OLED pixel；
Step I：Encapsulation.
5. a kind of full-color display structure, including：
Circuit substrate (10), multiple pixel regions including array arrangement；
Blue-ray LED device (2 '), is made of LED chip, is formed on the circuit substrate (10) by column；
Green light OLED device (3 ') and feux rouges OLED device (4 '), are formed on the circuit substrate (10) by column respectively；
The blue-ray LED device (2 '), green light OLED device (3 ') and feux rouges OLED device (4 ') pass through circuit substrate (10)
Realize electricity interconnection.
6. full-color display structure as claimed in claim 5, which is characterized in that be provided in the pixel region and blue-ray LED
The pixel-driving circuit that device (2 '), green light OLED device (3 ') are connected with feux rouges OLED (4 ') device.
7. a kind of preparation method of full-color display structure, including：
Step A：Blue-light LED chip is prepared on a sapphire substrate, is packaged into blue-ray LED device (2 ')；
Step B：Prepare green light OLED device (3 ') and feux rouges OLED device (4 ')；
Step C：Blue-ray LED device (2 '), OLED device (3 ') and feux rouges OLED device (4 ') are bonded to circuit substrate respectively
(10) on, it is arranged into array format；
Step D：To circuit substrate (10) plus driving current, full-color display is realized.
8. a kind of full-color display structure, including：
Circuit substrate (10), multiple pixel regions including array arrangement；
Blue-ray LED device (2 '), is made of LED chip, is formed on the circuit substrate (10) by column；
Green light, feux rouges OLED array, are formed on the circuit substrate (10) by column respectively；
The blue-ray LED device (2 ') and green light, feux rouges OLED array pass through circuit substrate (10) realization electricity interconnection.
9. full-color display structure as claimed in claim 8, which is characterized in that be provided in the pixel region and blue-ray LED
The pixel-driving circuit that device (2 '), green light, feux rouges OLED array are connected.
10. a kind of preparation method of full-color display structure, including：
Step A：Transparency conducting layer (5) are sputtered on circuit substrate (10) surface, are formed by etching green light, feux rouges OLED region
Anode, meanwhile, cathode insulated column (3-4) is prepared on transparency conducting layer (5)；
Step B：Blue-ray LED device (2 ') is connect with circuit substrate (10)；
Step C：Green light, feux rouges OLED array are prepared on circuit substrate；
Step D：Encapsulation；
Step E：To circuit substrate (10) plus driving current, full-color display is realized.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676284A (en) * | 2019-10-16 | 2020-01-10 | 福州大学 | Non-electrical contact mu LED light-emitting and display device without external carrier injection and huge transfer and preparation method thereof |
| CN111370543A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院半导体研究所 | Tunable white light three-terminal light-emitting device combining LED and OLED and preparation method thereof |
| CN113299678A (en) * | 2021-04-14 | 2021-08-24 | 福州大学 | Integrated packaging micro-display chip and preparation method thereof |
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| CN110676284A (en) * | 2019-10-16 | 2020-01-10 | 福州大学 | Non-electrical contact mu LED light-emitting and display device without external carrier injection and huge transfer and preparation method thereof |
| WO2021073287A1 (en) * | 2019-10-16 | 2021-04-22 | 福州大学 | μLED LIGHT-EMITTING AND DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, EXTERNAL CARRIER INJECTION OR MASS TRANSFER, AND METHOD FOR PREPARING SAME |
| CN110676284B (en) * | 2019-10-16 | 2021-07-13 | 福州大学 | Non-electrical contact mu LED light-emitting and display device without external carrier injection |
| CN111370543A (en) * | 2020-03-23 | 2020-07-03 | 中国科学院半导体研究所 | Tunable white light three-terminal light-emitting device combining LED and OLED and preparation method thereof |
| CN113299678A (en) * | 2021-04-14 | 2021-08-24 | 福州大学 | Integrated packaging micro-display chip and preparation method thereof |
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