CN108878272A - A kind of preparation method and polysilicon membrane of polysilicon membrane - Google Patents
A kind of preparation method and polysilicon membrane of polysilicon membrane Download PDFInfo
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- CN108878272A CN108878272A CN201810697432.0A CN201810697432A CN108878272A CN 108878272 A CN108878272 A CN 108878272A CN 201810697432 A CN201810697432 A CN 201810697432A CN 108878272 A CN108878272 A CN 108878272A
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- 239000012528 membrane Substances 0.000 title claims abstract description 156
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 84
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 79
- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 113
- 150000002815 nickel Chemical class 0.000 claims abstract description 54
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 69
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 24
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 5
- 238000010129 solution processing Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 10
- 239000000243 solution Substances 0.000 description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 29
- 239000010408 film Substances 0.000 description 20
- 238000005224 laser annealing Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 10
- 239000007921 spray Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 229910001453 nickel ion Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- FMGSKLZLMKYGDP-USOAJAOKSA-N dehydroepiandrosterone Chemical class C1[C@@H](O)CC[C@]2(C)[C@H]3CC[C@](C)(C(CC4)=O)[C@@H]4[C@@H]3CC=C21 FMGSKLZLMKYGDP-USOAJAOKSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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Abstract
The present invention provides a kind of preparation method of polysilicon membrane and polysilicon membrane, solve the problems, such as polysilicon membrane in the prior art because caused by crystalline quality is lower during the preparation process, polysilicon grain is small, size is uneven thin film transistor (TFT) electric property it is bad.The preparation method of polysilicon membrane provided by the invention includes：Amorphous silicon membrane is formed on the substrate；Amorphous silicon membrane is handled using the first solution, dissolved with nickel salt and ozone in the first solution；And Crystallizing treatment is carried out to form polysilicon membrane to the amorphous silicon membrane by the processing of the first solution.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of preparation method and polysilicon membrane of polysilicon membrane.
Background technique
Polycrystalline SiTFT has higher electron mobility, anti-faster compared with amorphous silicon film transistor
With higher resolution ratio between seasonable, it is widely used to display device at present, the switch element as driving circuit section.Polycrystalline
Silicon thin film transistor generally uses low temperature polycrystalline silicon method (LowTemperature Poly-Silicon, referred to as LTPS) to make
At, chemical vapor deposition (Chemical Vapor Deposition, referred to as CVD) can be used first and form amorphous silicon layer, then
Crystallization processing is carried out to the amorphous silicon layer, generally uses quasi-molecule laser annealing (Excimer Laser at present
Annealing, referred to as ELA) amorphous silicon layer converts amorphous silicon layer by technology.
However, excimer laser is as a kind of gas laser, process repeatability is poor, common Excimer-Laser Crystallization
Technique is all to make amorphous silicon melting recrystallization in a short period of time, it is difficult to well control polysilicon grain size and uniformly
Property.And the polysilicon membrane of highly crystalline quality is the premise for making transistor device obtain good electrical performance, if the crystal grain obtained
Size is smaller, and crystalline quality is not high, then largely will limit the promotion of film transistor device electric property.
Summary of the invention
In view of this, the embodiment of the present invention is dedicated to providing the preparation method and polysilicon membrane of a kind of polysilicon membrane,
To solve polysilicon membrane in the prior art because crystalline quality is lower during the preparation process, polysilicon grain is small, size is uneven
The bad problem of thin film transistor (TFT) electric property caused by even.
One aspect of the present invention provides a kind of preparation method of polysilicon membrane, including：It is thin that amorphous silicon is formed on the substrate
Film；Amorphous silicon membrane is handled using the first solution, dissolved with nickel salt and ozone in the first solution；And to by the first solution
The amorphous silicon membrane of processing carries out Crystallizing treatment to form polysilicon membrane.
In one embodiment, the concentration of nickel salt is 0.1~100mg/1g in the first solution, the concentration of ozone is 5~
20ppm。
In one embodiment, after the processing of the first solution, the thickness for the silicon oxide film that the surface of amorphous silicon membrane is formed
Degree is 1~10nm.
In one embodiment, before being handled using the first solution amorphous silicon membrane, method further comprises：
Remove the first silicon oxide layer that the surface of amorphous silicon membrane is formed.
In one embodiment, remove amorphous silicon membrane surface formed the first silicon oxide layer include：It is molten using second
Liquid is surface-treated amorphous silicon membrane, dissolved with hydrofluoric acid in the second solution；Amorphous silicon membrane is carried out using the first solution
Processing includes：Surface treated amorphous silicon membrane is started the cleaning processing using the first solution.
In one embodiment, also dissolved with nickel salt in the second solution, the concentration of hydrofluoric acid is 0.5~5wt%.
In one embodiment, before the first silicon oxide layer that the surface of removal amorphous silicon membrane is formed, method is into one
Step includes：Surface oxidation treatment is carried out to form the second silicon oxide layer on the basis of the first silicon oxide layer to amorphous silicon membrane；
Removal amorphous silicon membrane surface formed the first silicon oxide layer include：Remove the second silica that amorphous silicon membrane surface is formed
Layer.
In one embodiment, carrying out surface oxidation treatment to amorphous silicon membrane includes：Using third solution to amorphous silicon
Film carries out surface oxidation treatment, dissolved with ozone in third solution.
In one embodiment, also dissolved with nickel salt in third solution, the concentration of ozone is 5~20ppm.
In one embodiment, before being handled using the first solution amorphous silicon membrane, method further comprises：
Dehydrogenating technology processing is carried out to amorphous silicon membrane.
Another aspect of the present invention provides a kind of polysilicon membrane, and the polysilicon membrane is as described by any of the above-described embodiment
Method be made.
In one embodiment, polysilicon membrane is made of polysilicon grain, doped with nickel salt, the doping of nickel salt in crystal grain
Amount is 0.1~100mg/1g, and the size of crystal grain is 0.37~0.50 μm, and the standard variance of grain size is less than 0.005 μm.
In the preparation method of polysilicon membrane provided by the present invention, after amorphous silicon membrane is formed, crystalline substance is carried out to it
Before change processing, amorphous silicon membrane is surface-treated using the first solution dissolved with nickel salt and ozone.On the one hand, first
Ozone in solution has corrosiveness to amorphous silicon, then nickel ion can be spread using this even action, to be evenly distributed
In the surface (forming certain thickness nickel ion layer) of amorphous silicon membrane, this will promote silicon and nickel to form tantnickel compound.In standard point
In sub- laser anneal process, seed crystal of the nickel silicide (SiN2) as amorphous crystallization of silicon can promote amorphous silicon to turn to polysilicon
Become, and polysilicon crystal can be made uniform, while it is bigger to can promote under the catalytic action of nickel longer crystallite dimension, knot
Crystalloid amount is higher.On the other hand, the ozone in the first solution can make polysilicon membrane surface form certain thickness silica thin
Film, the silicon oxide film can make amorphous silicon below absorb more laser energy, reduce cooling rate, formation temperature ladder
Degree, thus preferably control nucleation direction and grain boundary sites, conducive to growing up for crystal grain, improvement crystalline quality.In this way, being induced in nickel
Under the double action of siliconoxide blanket layer, while ensure that crystal grain is uniformly coarse, crystalline quality is also improved, so as to make
The electric property of the thin film transistor (TFT) of preparation gets a promotion.
Detailed description of the invention
Fig. 1 show the flow chart of the preparation method of the polysilicon membrane of one embodiment of the invention offer.
Fig. 2 show sample structure used by the preparation method of the polysilicon membrane of one embodiment of the invention offer and illustrates
Figure.
Fig. 3 show another embodiment of the present invention provides polysilicon membrane preparation method flow chart.
Fig. 4 show the flow chart of the preparation method of the polysilicon membrane of yet another embodiment of the invention offer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Fig. 1 show a kind of flow chart of the preparation method of polysilicon membrane of one embodiment of the invention offer.Such as Fig. 1 institute
Show, this method comprises the following steps：
Step 101：Amorphous silicon membrane is formed on the substrate.
As shown in Fig. 2, the substrate 10 specifically may include substrate 11 and the buffer layer 12 for being covered in 11 upper surface of substrate.Substrate
The materials such as glass substrate or quartz base plate can be used, but in mass production, consider that factors, the substrate materials such as cost are preferential
Select glass substrate.SiO can be used in buffer layer 122Buffer layer, or use SiNxAnd SiOxThe compound buffer layer of composition, to prevent
Impurity in substrate 11 spreads and influences the property of final polysilicon membrane into the structure on upper layer in subsequent technical process
Energy.
Amorphous silicon membrane 20 can specifically pass through such as plasma enhanced chemical vapor deposition method (Plasma Enhanced
Chemical Vapor Deposition, referred to as PECVD), low-pressure chemical vapour deposition technique (Low Pressure
Chemical Vapor Deposition, referred to as LPCVD) or sputtering the methods of preparation, to cover the upper table of substrate 10
Face.
Step 102：Amorphous silicon membrane is handled using the first solution, dissolved with nickel salt and ozone in first solution.
Step 103：Crystallizing treatment is carried out to form polysilicon membrane to the amorphous silicon membrane by the processing of the first solution.
For the Crystallizing treatment in step 103, excimer laser annealing process can be used, with pulse laser irradiation amorphous silicon
Film is so that it is melted, when amorphous silicon liquid is cooling, amorphous silicon liquid depend on nucleus gradually crystalline growth and to form polysilicon thin
Film.For example, quasi-molecule laser annealing equipment can be used at room temperature and atmospheric pressure with 300~500mJ/cm2Energy, 5~30 μ
The sweep span of m carries out laser-annealing crystallization processing to amorphous silicon membrane, eventually forms polysilicon membrane.
Before this step, as described in step 102, the first solution can be used, amorphous silicon membrane is surface-treated,
In in the first solution dissolved with nickel salt and ozone.In embodiments of the present invention, the surface treatment concretely cleaning such as spray or immersion
Processing.
In an embodiment of the present invention, the concentration of ozone can be 5~20ppm in first solution, it is preferable that for 10~
17ppm, the setting of this concentration is more conducive to control the uniformity of silicon oxide film thickness, so that more conducively crystalline quality mentions
It is high.
In one embodiment, the concentration of nickel salt can be 0.1~100mg/1g, as 1mg/1g, 10mg/1g, 15mg/1g,
20mg/1g, 80mg/1g, 90mg/1g etc., all concentration within the scope of 0.1~100mg/1g be all it is feasible, for nickel salt
The specific choice of concentration can do different set according to the actual situation.In a preferred embodiment, the concentration of nickel salt be 5~
30mg/1g, the nickel salt solution of the low concentration both can avoid more nickel ion and entered amorphous silicon membrane and lead to nucleating center
Growth that is too many and influencing crystal grain, reduces crystallite dimension, while advantageously reducing nickel residual, to avoid metal ion
Pollution.
In an embodiment of the present invention, the time for using the first solution to clean amorphous silicon membrane can be 20~50
Second, to form good the thickness uniformity.In one embodiment, after the completion of through the cleaning of the first solution, amorphous silicon membrane surface
The silicon oxide film of formation with a thickness of 1~10nm, preferably 1~5nm.The silicon oxide film of the relatively small thickness can effectively subtract
A possibility that small uneven thickness, to promote amorphous silicon to turn to polysilicon in the case where not influencing polysilicon membrane quality
Become, and make polysilicon crystal uniform, crystallite dimension is big, improves crystalline quality.
In the preparation method of polysilicon membrane provided in an embodiment of the present invention, after amorphous silicon membrane is formed, to its into
Before row Crystallizing treatment, amorphous silicon membrane is surface-treated using the first solution dissolved with nickel salt and ozone.On the one hand,
Ozone in first solution has corrosiveness to amorphous silicon, then nickel ion can be spread using this even action, thus equably
It is distributed in the surface (forming certain thickness nickel ion layer) of amorphous silicon membrane, this will promote silicon and nickel to form tantnickel compound.?
During quasi-molecule laser annealing, nickel silicide (SiN2) seed crystal as amorphous crystallization of silicon, amorphous silicon can be promoted to polycrystalline
Silicon transformation, and polysilicon crystal can be made uniform, while can promote longer crystallite dimension more under the catalytic action of nickel
Greatly, crystalline quality is higher.On the other hand, the ozone in the first solution can make polysilicon membrane surface form certain thickness oxidation
Silicon thin film, the silicon oxide film can make amorphous silicon below absorb more laser energy, reduce cooling rate, form temperature
Gradient is spent, thus preferably control nucleation direction and grain boundary sites, conducive to growing up for crystal grain, improvement crystalline quality.In this way, in nickel
Under induction and the double action of siliconoxide blanket layer, while ensure that crystal grain is uniformly coarse, crystalline quality is also improved, thus
The electric property of the thin film transistor (TFT) of preparation can be made to get a promotion.
Fig. 3 show another embodiment of the present invention provides a kind of polysilicon membrane preparation method flow chart.Such as Fig. 3
Shown, this method comprises the following steps：
Step 301：Amorphous silicon membrane is formed on the substrate.
Step 302：Dehydrogenating technology processing is carried out to amorphous silicon membrane.
In order to avoid generating quick-fried hydrogen when handling using quasi-molecule laser annealing method the amorphous silicon membrane of formation
The problem of, the present embodiment carries out dehydrogenating technology processing before the surface to amorphous silicon membrane is cleaned, to amorphous silicon membrane.
Specifically, Dehydroepiandrosterone derivative can be carried out under the conditions of 450-550 DEG C, the time concretely 20-100 minutes, made in amorphous silicon membrane
Hydrogen content below 1%.
Step 303：Remove the first silicon oxide layer that amorphous silicon membrane surface is formed.
After its formation, surface is readily generated one layer of first silicon oxide layer (i.e. primary silicon oxide layer) to amorphous silicon membrane,
But the uniformity and compactness of first silicon oxide layer are bad, carry out step again if first silicon oxide layer got rid of
304 and step 305, it can further promote the crystalline quality of crystal grain.
Specifically, the second solution can be used to be surface-treated to by the amorphous silicon membrane of Dehydroepiandrosterone derivative, concretely
Cleaning treatment, wherein dissolved with hydrofluoric acid in second solution, to fall amorphous silicon membrane table using the aggressive etch of hydrofluoric acid
The first silicon oxide layer that face is formed.
In a preferred embodiment, the concentration of hydrofluoric acid can be 0.5~5wt% in second solution.Concentration setting
Both not too high, it is unlikely to keep etching speed too fast and lead to excessive corrosion amorphous silicon membrane；Will not be too small, it is unlikely to make to lose
Carve speed causes to cannot be removed effectively the first silicon oxide layer slowly excessively.In one embodiment, first silicon oxide layer is removed
Time can be 20~50 seconds, same reason, and such time setting not only can guarantee effectively removing for the first silicon oxide layer, but also not
It will lead to the excessive corrosion of amorphous silicon membrane.
In an embodiment of the present invention, also dissolved with nickel salt in second solution, nickel salt is added in this cleaning step, it can
So that nickel salt begins to the surface for being spread evenly across amorphous silicon membrane using the corrosiveness of hydrofluoric acid, promote tantnickel compound earlier
Ground is formed, to further improve forming core uniformity, forms the biggish polysilicon of crystal grain.
In one embodiment, the concentration of nickel salt can specifically be greater than 0 and be less than 100mg/1g.Preferably, in the second solution
The concentration of nickel salt is less than or equal to the concentration of nickel salt in the first solution, that is to say, that is guaranteeing by using micro nickel ion
While obtaining uniformly coarse crystal grain, nickel residual can be reduced to the greatest extent and it is avoided to have an impact the growth of crystal grain.
Step 304：The amorphous silicon membrane Jing Guo above-mentioned surface treatment is started the cleaning processing using the first solution, wherein should
Dissolved with nickel salt and ozone in first solution.
Step 305：Crystallizing treatment is carried out to form polysilicon membrane to the amorphous silicon membrane by the processing of the first solution.
Step 301,304 and 305 in the present embodiment are similar with the step 101-103 in embodiment illustrated in fig. 1 respectively,
Details are not described herein again.
In the preparation method of the polysilicon membrane provided by the embodiment of the present invention, after amorphous silicon membrane is formed, to it
Before surface carries out solution cleaning, dehydrogenating technology processing is carried out to amorphous silicon membrane first, it can be to avoid quasi-molecule laser annealing
The quick-fried hydrogen problem generated when method handles amorphous silicon membrane.Simultaneously after dehydrogenating technology processing, using the first solution pair
Before amorphous silicon membrane is cleaned, the first silicon oxide layer of its surface formation is removed using the second solution dissolved with hydrofluoric acid,
Crystalline quality can further be improved, promote the uniformity of crystal grain.Preferably, it is just opened when being started the cleaning processing using the second solution
Begin that nickel salt is added, nickel salt can be made to begin to the surface for being spread evenly across amorphous silicon membrane using the corrosiveness of hydrofluoric acid, from
And further improving forming core uniformity, promotion forms the biggish polysilicon of crystallite dimension.
Fig. 4 show a kind of flow chart of the preparation method of polysilicon membrane of yet another embodiment of the invention offer.Such as Fig. 4
Shown, this method comprises the following steps：
Step 401：Amorphous silicon membrane is formed on the substrate.
Step 402：Dehydrogenating technology processing is carried out to amorphous silicon membrane.
Step 403：Surface oxidation treatment is carried out to form second on the basis of the first silicon oxide layer to amorphous silicon membrane
Silicon oxide layer.
As previously mentioned, the uniformity and compactness of the first silicon oxide layer that amorphous silicon membrane surface is formed are bad, utilize
Step 403 can further aoxidize first silicon oxide layer, be compensated as more uniform second silicon oxide layer (second oxidation
Silicon layer includes the first silicon oxide layer of part and is formed by regenerating oxidation silicon layer by the oxidation of the first silicon oxide layer of part), in favor of
The uniformity of subsequent hydrofluoric acid treatment, while also can remove the metal ion and organic impurities of amorphous silicon surfaces.
In an embodiment of the present invention, third solution can be used, surface oxidation treatment is carried out to amorphous silicon membrane, specifically may be used
For cleaning treatment, wherein dissolved with ozone in the third solution.
In an embodiment of the present invention, the concentration of ozone can be 5~20ppm, the setting of this concentration in the third solution
More conducively the first silicon oxide layer is compensated as uniform second silicon oxide layer.In one embodiment, it is carried out using third solution
The time of cleaning treatment can be 20~50 seconds.
In an embodiment of the present invention, also dissolved with nickel salt in the third solution.In the present embodiment, just from this cleaning step
It is initially added into nickel salt, nickel salt can be made to begin to the surface for being spread evenly across amorphous silicon membrane using the corrosiveness of ozone, from
And it is more conducive to promote being uniformly distributed for nickel ion, and then further improve the uniformity of forming core and promote the formation compared with big crystal grain.
In one embodiment, the concentration of nickel salt can specifically be greater than 0 and be less than 100mg/1g.Preferably, in third solution
The concentration of nickel salt is less than or equal to the concentration of nickel salt in the first solution, can be identical as the concentration of nickel salt in the second solution.Equally
Reason, can also be subtracted as far as possible while guaranteeing to obtain uniformly coarse crystal grain in third solution using micro nickel ion
Few nickel remains and it is avoided to have an impact the growth of crystal grain.
Step 404：Remove the second silicon oxide layer that amorphous silicon membrane surface is formed.
That is, the surface oxidation treatment by step 403, forms more uniform second on amorphous silicon membrane surface
Silicon oxide layer and then second silicon oxide layer is got rid of from amorphous silicon membrane surface.The minimizing technology can be with reality shown in Fig. 3
The step 303 (the first silicon oxide layer of removal) applied in example is similar, and details are not described herein again.
After second silicon oxide layer is removed, then it can be formed on amorphous silicon membrane surface by the cleaning treatment of step 405
The silicon oxide film that thickness is more uniform, film quality is more excellent, so that the coarse and uniformity of crystallite dimension is advantageously promoted, into
One step improves crystalline quality.
Step 405：The amorphous silicon membrane Jing Guo above-mentioned surface treatment is started the cleaning processing using the first solution, wherein should
Dissolved with nickel salt and ozone in first solution.
Step 406：Crystallizing treatment is carried out to form polysilicon membrane to the amorphous silicon membrane by the processing of the first solution.
Step 401-402 and step 405-406 in the present embodiment respectively with the step 301- in embodiment illustrated in fig. 3
302 and step 304-305 is similar, and details are not described herein again.
In the preparation method of the polysilicon membrane provided by the embodiment of the present invention, dehydrogenation work is being carried out to amorphous silicon membrane
After skill processing, surface oxidation treatment is carried out to amorphous silicon membrane first, to be further formed on the basis of the first silicon oxide layer
More uniform second silicon oxide layer, the then uniformity of more conducively subsequent hydrofluoric acid treatment and the uniformity of silicon oxide film thickness
And the promotion of film quality, to advantageously promote the coarse and uniformity of crystallite dimension.Furthermore it is preferred that using third solution,
Nickel salt is all added when starting the cleaning processing in second solution and the first solution, can make nickel salt while aoxidizing the first silicon oxide layer
It begins to gradually spread, further promotes the uniformity that nickel ion is distributed in amorphous silicon membrane surface, to effectively be promoted
The uniformity and crystalline quality of grain crystalline.
In addition, the polysilicon membrane is by any of the above-described embodiment the embodiment of the invention also provides a kind of polysilicon membrane
Described preparation method is made.
The polysilicon membrane is made of polysilicon grain, doped with nickel salt in crystal grain.Nickel salt is specifically as follows organic salt,
It can be inorganic salts, as long as it is not chemically reacted with corrosive liquid (such as hydrofluoric acid or ozone) used in membrane-film preparation process
?.The doping of nickel salt is related to nickel salt molecular weight, and in one embodiment, doping can be 0.1~100mg/1g, this
A doping can make crystallite dimension bigger, and crystalline quality is higher simultaneously, also can avoid the characteristic for influencing film transistor device.
In an embodiment of the present invention, the size of crystal grain is 0.37~0.50 μm in the polysilicon membrane, grain size
For standard variance less than 0.005 μm, crystallite dimension is big and uniform, can make the electricity of the thin film transistor (TFT) prepared by the polysilicon membrane
Performance is learned to be obviously improved.
The uniformity of the grain size of polysilicon membrane can be evaluated by the standard variance of grain size, standard variance
As a result the stable and smaller uniformity for indicating grain size is preferable.The standard variance can first pass through the size variation model of measurement crystal grain
It encloses, is calculated further according to this data area.
To method provided by the present invention and polysilicon membrane will be prepared in the prior art by specific embodiment below
Method and its obtained polysilicon membrane crystal grain compare, with the present invention is described in further detail.
Embodiment 1
First the amorphous silicon membrane with a thickness of 50nm is formed using chemical vapour deposition technique on a glass substrate, will be formed with
The substrate of amorphous silicon membrane carries out Dehydroepiandrosterone derivative, and desorption temperature is 500 DEG C, and the processing time is 60 minutes, hydrogen content 0.4%.
Then use spray process with the aqueous solution dissolved with ozone to base-plate cleaning 40 seconds, wherein the concentration of ozone is 15ppm, forms thickness
For the second silicon oxide layer of 1~5nm.Then utilize the aqueous solution dissolved with hydrofluoric acid to cleaning glass substrate 40 using spray process
Second, removal is formed by the second silicon oxide layer, and wherein the concentration of hydrofluoric acid is 1wt% in solution.Then utilized using spray process
Substrate is cleaned 40 seconds again dissolved with the aqueous solution of ozone and nickel salt, wherein the concentration of ozone is 15ppm, and the concentration of nickel salt is
15mg/1g forms the silicon oxide film with a thickness of 3nm.Quasi-molecule laser annealing equipment is finally used at room temperature and atmospheric pressure
With 400mJ/cm2Energy, 15 μm of sweep span, to amorphous silicon membrane carry out laser-annealing crystallization processing, formed polycrystalline
Silicon thin film.
It is measured using grain size variation range of the scanning electron microscope to gained polysilicon membrane, as the result is shown
Grain size changes in 0.37~0.45 μ m, and the standard variance for be calculated grain size to this data is less than
0.005μm。
Embodiment 2
First the amorphous silicon membrane with a thickness of 50nm is formed using chemical vapour deposition technique on a glass substrate, will be formed with
The substrate of amorphous silicon membrane carries out Dehydroepiandrosterone derivative, and desorption temperature is 500 DEG C, and the processing time is 60 minutes, hydrogen content 0.4%.
Then use spray process with the aqueous solution dissolved with ozone and nickel salt to base-plate cleaning 40 seconds, wherein the concentration of ozone is 15ppm, nickel
The concentration of salt is 15mg/1g, forms the second silicon oxide layer with a thickness of 1~5nm.Then it is utilized using spray process dissolved with hydrofluoric acid
Aqueous solution with nickel salt was to cleaning glass substrate 40 seconds, and removal is formed by the second silicon oxide layer, wherein hydrofluoric acid in solution
Concentration is 1wt%, and the concentration of nickel salt is 15mg/1g.Then utilized dissolved with the aqueous solution of ozone and nickel salt using spray process to base
Plate cleans 40 seconds again, wherein the concentration of ozone is 15ppm, and the concentration of nickel salt is 15mg/1g, forms the silica with a thickness of 3nm
Film.Finally use quasi-molecule laser annealing equipment with 400mJ/cm at room temperature and atmospheric pressure2Energy, between 15 μm of scanning
Away to amorphous silicon membrane progress laser-annealing crystallization processing, formation polysilicon membrane.
It is measured using grain size variation range of the scanning electron microscope to gained polysilicon membrane, as the result is shown
Grain size changes in 0.43~0.50 μ m, and the standard variance for be calculated grain size to this data is less than
0.005μm。
Comparative example 1
First the amorphous silicon membrane with a thickness of 50nm is formed using chemical vapour deposition technique on a glass substrate, will be formed with
The substrate of amorphous silicon membrane carries out Dehydroepiandrosterone derivative, and desorption temperature is 500 DEG C, and the processing time is 60 minutes, hydrogen content 0.4%.
Then use spray process with the aqueous solution dissolved with ozone to base-plate cleaning 40 seconds, wherein the concentration of ozone is 15ppm, forms thickness
For the second silicon oxide layer of 1~5nm.Then utilize the aqueous solution dissolved with hydrofluoric acid to cleaning glass substrate 40 using spray process
Second, removal is formed by the second silicon oxide layer, and wherein the concentration of hydrofluoric acid is 1wt% in solution.Then utilized using spray process
Substrate is cleaned again 40 seconds dissolved with the aqueous solution of ozone, wherein the concentration of ozone is 15ppm, forms the silica with a thickness of 3nm
Film.Finally use quasi-molecule laser annealing equipment with 400mJ/cm at room temperature and atmospheric pressure2Energy, between 15 μm of scanning
Away to amorphous silicon membrane progress laser-annealing crystallization processing, formation polysilicon membrane.
It is measured using grain size variation range of the scanning electron microscope to gained polysilicon membrane, as the result is shown
Grain size changes in 0.30~0.40 μ m, calculates this data, and the standard variance for obtaining grain size exists
Unstability is unsatisfactory for the requirement less than 0.005 μm.
It can be seen that by said determination result, the size criteria variance of embodiment 1 and the crystal grain obtained of embodiment 2 is obvious
Less than the size criteria variance of the crystal grain obtained of comparative example 1, that is to say, that the only cleaning after getting rid of the second silicon oxide layer
Using the solution dissolved with ozone and nickel salt in step, i.e., than this step only with the uniformity of ozone solution crystal grain obtained
More preferably.And from the dimension data of crystal grain it can also be seen that embodiment 1 and the crystallite dimension obtained of embodiment 2 are also generally greater than comparison
The crystallite dimension obtained of example 1.
In addition, can be seen that from the area Results of embodiment 1 and the obtained grain size of embodiment 2, three cleaning steps
The solution of middle use dissolved with nickel salt (embodiment 2) with only in getting rid of the cleaning step after the second silicon oxide layer using dissolved with
The solution (embodiment 1) of nickel salt is compared, and obtained crystallite dimension is bigger, and change in size range is smaller, i.e., uniformity is more preferable.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all in spirit of the invention and
Within principle, made any modification, equivalent replacement etc. be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of polysilicon membrane, which is characterized in that including：
Amorphous silicon membrane is formed on the substrate；
The amorphous silicon membrane is handled using the first solution, dissolved with nickel salt and ozone in first solution；And
Crystallizing treatment is carried out to form polysilicon membrane to the amorphous silicon membrane by the processing of the first solution.
2. the preparation method of polysilicon membrane according to claim 1, which is characterized in that nickel salt in first solution
Concentration is 0.1~100mg/1g, and the concentration of ozone is 5~20ppm, and after first solution processing, the amorphous silicon is thin
The silicon oxide film that the surface of film is formed with a thickness of 1~10nm.
3. the preparation method of polysilicon membrane according to claim 1, which is characterized in that use the first solution pair described
Before the amorphous silicon membrane is handled, the method further includes：Remove the surface formation of the amorphous silicon membrane
First silicon oxide layer.
4. the preparation method of polysilicon membrane according to claim 3, which is characterized in that the removal amorphous silicon is thin
The first silicon oxide layer that the surface of film is formed includes：The amorphous silicon membrane is surface-treated using the second solution, it is described
Dissolved with hydrofluoric acid in second solution；
The first solution of the use carries out processing to the amorphous silicon membrane：Using the first solution to by the surface
The amorphous silicon membrane of reason starts the cleaning processing.
5. the preparation method of polysilicon membrane according to claim 4, which is characterized in that in second solution also dissolved with
Nickel salt, the concentration of the hydrofluoric acid are 0.5~5wt%.
6. according to the preparation method of polysilicon membrane described in claim 3 to 5 any one, which is characterized in that gone described
Before the first silicon oxide layer formed except the surface of the amorphous silicon membrane, the method further includes：To the amorphous silicon
Film carries out surface oxidation treatment to form the second silicon oxide layer on the basis of first silicon oxide layer；
The first silicon oxide layer that the surface of the removal amorphous silicon membrane is formed includes：Remove the amorphous silicon membrane surface
Second silicon oxide layer formed.
7. the preparation method of polysilicon membrane according to claim 6, which is characterized in that described to the amorphous silicon membrane
Carrying out surface oxidation treatment includes：Surface oxidation treatment is carried out to the amorphous silicon membrane using third solution, the third is molten
Dissolved with ozone in liquid.
8. the preparation method of polysilicon membrane according to claim 7, which is characterized in that in the third solution also dissolved with
Nickel salt, the concentration of the ozone are 5~20ppm.
9. polysilicon membrane made of a kind of preparation method of the polysilicon membrane described in claim 1 to 8 any one.
10. a kind of polysilicon membrane, which is characterized in that the polysilicon membrane is made of polysilicon grain, is mixed in the crystal grain
Miscellaneous to have nickel salt, the doping of the nickel salt is 0.1~100mg/1g, and the size of the crystal grain is 0.37~0.50 μm, and crystal grain is big
Small standard variance is less than 0.005 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020143452A1 (en) * | 2019-01-08 | 2020-07-16 | 京东方科技集团股份有限公司 | Film surface treatment method and film surface treatment device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179195A (en) * | 2002-11-22 | 2004-06-24 | Sharp Corp | Semiconductor thin film, method of forming the same, semiconductor device, and display device |
| CN1519060A (en) * | 2003-01-21 | 2004-08-11 | 友达光电股份有限公司 | Method for rinsing surface of silicon and technique for manufacturing thin film transistory by using the rinsing method |
| CN1585089A (en) * | 2003-08-22 | 2005-02-23 | 友达光电股份有限公司 | Method for forming polycrystalline silicon layer |
| CN104282546A (en) * | 2013-07-08 | 2015-01-14 | 上海和辉光电有限公司 | Method for improving homogeneity of polycrystalline silicon layer |
-
2018
- 2018-06-29 CN CN201810697432.0A patent/CN108878272A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179195A (en) * | 2002-11-22 | 2004-06-24 | Sharp Corp | Semiconductor thin film, method of forming the same, semiconductor device, and display device |
| CN1519060A (en) * | 2003-01-21 | 2004-08-11 | 友达光电股份有限公司 | Method for rinsing surface of silicon and technique for manufacturing thin film transistory by using the rinsing method |
| CN1585089A (en) * | 2003-08-22 | 2005-02-23 | 友达光电股份有限公司 | Method for forming polycrystalline silicon layer |
| CN104282546A (en) * | 2013-07-08 | 2015-01-14 | 上海和辉光电有限公司 | Method for improving homogeneity of polycrystalline silicon layer |
Non-Patent Citations (1)
| Title |
|---|
| 于军胜: "《OLED显示基础及产业化》", 28 February 2015, 电子科技大学出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020143452A1 (en) * | 2019-01-08 | 2020-07-16 | 京东方科技集团股份有限公司 | Film surface treatment method and film surface treatment device |
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