CN108878268A - A kind of manufacturing method of inserted graphene PN junction - Google Patents
A kind of manufacturing method of inserted graphene PN junction Download PDFInfo
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- CN108878268A CN108878268A CN201810759564.1A CN201810759564A CN108878268A CN 108878268 A CN108878268 A CN 108878268A CN 201810759564 A CN201810759564 A CN 201810759564A CN 108878268 A CN108878268 A CN 108878268A
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- graphene
- junction
- ion
- manufacturing
- hexagon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
Abstract
The present invention provides a kind of manufacturing methods of inserted graphene PN junction, in copper substrate, hexagon is configured into the inserted metal alloy doped structure of different doping types by exposure mask and ion implanted junction, it is formed by chemical vapor deposition inserted graphene PN junction, make graphene PN junction that there is biggish interface area, the doping depth of graphene PN doped region is high；Manufacture craft is simple.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to a kind of manufacturing method of inserted graphene PN junction.
Background technique
The area of graphene PN junction in the prior art, interface is small, cannot give full play to the advantage of graphene PN junction, simultaneously
The methods of carry out injecting on graphene, it is not easy to exposure mask is formed, and is not easy doped p-type and N-type atom, how to be manufactured big
The graphene PN junction of interface area, and simplifying manufacturing process is the technical problem for compeling highly necessary to solve.
Summary of the invention
Based on solving the above problems, the present invention provides a kind of manufacturing method of inserted graphene PN junction, feature exists
In, the method includes：Step 1）Copper substrate is provided；Step 2）The first exposure mask that hexagon is inlayed is formed in the copper substrate
Figure；Step 3）One layer of metallic nickel is deposited in the copper substrate with mask pattern, and the first kind is carried out to the metallic nickel
Ion implanting；Step 4）The first annealing is carried out, the corronil with first kind ion is formed, to the corronil after injection
Layer carry out it is thinned, until leak out mask pattern, remove mask pattern, form the island of hexagon；Step 5）With hexagon
Redeposited one layer of nickel on island；Step 6）Forming the second mask pattern, the island of the second mask pattern covering hexagon, exposure
Metal nickel layer except the island of hexagon out；Step 7）The injection of Second Type ion is carried out to the metal nickel layer except island；Step
Rapid 8）Second mask pattern is removed, carries out the second annealing, being formed around the island of hexagon has Second Type ion
The mosaic texture of corronil；Step 9）Polishing is carried out to albata layer and forms even curface, forms graphene deposition lining
Bottom；Step 10）One layer of inserted graphene PN junction is formed by chemical vapor deposition in graphene deposition substrate；Step 11）?
Electrod-array is formed on inserted graphene PN junction.
According to an embodiment of the invention, the ion of the first kind is p-type doping element, the ion of the Second Type
For n-type doping element.
According to an embodiment of the invention, the ion of the first kind is the group of B, S composition.
According to an embodiment of the invention, the ion of the Second Type is the group of N, P, As composition.
According to an embodiment of the invention, dosage of the first kind ion when carrying out ion implanting is 1016-1018,
Energy is 10-20KeV.
According to an embodiment of the invention, dosage of the Second Type ion when carrying out ion implanting is 1015-1017,
Energy is 5-15KeV.
According to an embodiment of the invention, the temperature of first annealing is 850-1000 DEG C, annealing time is 40-80 points
The temperature of clock, second annealing is 900-1500 DEG C, and annealing time is 30-60 minutes.
According to an embodiment of the invention, can be used platinum, cobalt, indium it is one or more, or with nickel formed alloy replace it is heavy
Product nickel uses.
Advantages of the present invention is as follows：
（1）The graphene PN junction of method manufacture provided by the invention has biggish interface area, can be improved device performance；
（2）The doping depth of method manufacture graphene PN doped region provided by the invention is high；
（3）The graphene PN junction manufacture craft of method manufacture provided by the invention is simple.
Detailed description of the invention
Fig. 1 is a kind of manufacturing approach craft block diagram of inserted graphene PN junction of the present invention；
Fig. 2 is the first mask pattern used in a kind of inserted graphene PN junction of the present invention；
Fig. 3 is inserted graphene PN junction plane structure chart prepared by the present invention.
Specific embodiment
First embodiment
As shown in Figure 1, a kind of manufacturing method of inserted graphene PN junction, which is characterized in that the method includes：Step 1）It mentions
For copper substrate 1；Step 2）The first mask pattern 2 that hexagon as shown in Figure 2 is inlayed is formed in the copper substrate；Step 3）
In the copper substrate 1 with mask pattern 2 deposit one layer of metallic nickel 3, the deposition method be vapor deposition, plating or magnetron sputtering,
The ion implanting of the first kind is carried out to the metallic nickel；Step 4）The first annealing is carried out, being formed has first kind ion
Corronil, the albata layer after injection is carried out it is thinned, until leak out mask pattern, remove mask pattern, formed six sides
The island 4 of shape；Step 5）Redeposited one layer of nickel on the island 4 with hexagon；Step 6）The second mask pattern 6 is being formed, it is described
Second mask pattern covers the island 4 of hexagon, exposes the metal nickel layer 5 except the island 4 of hexagon；Step 7）Except island 4
Metal nickel layer 5 carry out Second Type ion injection；Step 8）Second mask pattern 6 is removed, the second annealing is carried out,
4 surrounding of island of hexagon forms the mosaic texture with the corronil 7 of Second Type ion；Step 9）To albata layer into
Row polishing forms even curface, forms graphene deposition substrate；Step 10）Pass through chemical vapor deposition in graphene deposition substrate
Product forms one layer of inserted graphene PN junction 8；Step 11）Electrod-array 10 and 11 is formed on inserted graphene PN junction.
It further include being transferred to the graphene PN junction of formation on other substrates such as silica.
Wherein, the ion of the first kind is p-type doping element, and the ion of the Second Type is n-type doping element, first
The ion of type is the group of B, S composition, and the ion of Second Type is the group of N, P, As composition, and first kind ion is carrying out ion
Dosage when injection is 1016-1018, energy 10-20KeV, dosage of the Second Type ion when carrying out ion implanting
It is 1015-1017, energy 5-15KeV, the temperature of first annealing is 850-1000 DEG C, and annealing time is 40-80 minutes,
The temperature of second annealing is 900-1500 DEG C, and annealing time is 30-60 minutes.
Second embodiment
Different from the first embodiment：Can be used platinum, cobalt, indium it is one or more, or with nickel formed alloy replace deposit
Nickel uses
Finally it should be noted that：Obviously, the above embodiment is merely an example for clearly illustrating the present invention, and is not pair
The restriction of embodiment.For those of ordinary skill in the art, it can also be made on the basis of the above description
Its various forms of variation or variation.There is no necessity and possibility to exhaust all the enbodiments.And it thus amplifies out
Obvious changes or variations be still in the protection scope of this invention.
Claims (7)
1. a kind of manufacturing method of inserted graphene PN junction, which is characterized in that the method includes：Step 1）Brass is provided
Bottom；Step 2）The first mask pattern that hexagon is inlayed is formed in the copper substrate；Step 3）In the copper with mask pattern
One layer of metallic nickel is deposited on substrate, and the ion implanting of the first kind is carried out to the metallic nickel；Step 4）Carry out the first annealing, shape
At the corronil with first kind ion, the albata layer after injection is carried out thinned, until leaking out mask pattern, gone
Except mask pattern, the island of hexagon is formed；Step 5）Redeposited one layer of nickel on the island with hexagon；Step 6）Forming the
Two mask patterns, the island of the second mask pattern covering hexagon, expose the metal nickel layer except the island of hexagon；Step
7）The injection of Second Type ion is carried out to the metal nickel layer except island；Step 8）It removes second mask pattern, carries out the
Two annealing, form the mosaic texture with the corronil of Second Type ion around the island of hexagon；Step 9）To cupro-nickel
Alloy-layer carries out polishing and forms even curface, forms graphene deposition substrate；Step 10）In graphene passing through of deposition substrate
It learns vapor deposition and forms one layer of inserted graphene PN junction；Step 11）Electrod-array is formed on inserted graphene PN junction.
2. the manufacturing method of inserted graphene PN junction according to claim 1, which is characterized in that the first kind
Ion is p-type doping element, and the ion of the Second Type is n-type doping element.
3. the manufacturing method of inserted graphene PN junction according to claim 2, which is characterized in that the first kind
Ion is the group of B, S composition.
4. the manufacturing method of inserted graphene PN junction according to claim 2, which is characterized in that the Second Type
Ion is the group of N, P, As composition.
5. the manufacturing method of inserted graphene PN junction according to claim 3, which is characterized in that the first kind from
Dosage of the son when carrying out ion implanting is 1016-1018, energy 10-20KeV.
6. the manufacturing method of inserted graphene PN junction according to claim 4, which is characterized in that the Second Type from
Dosage of the son when carrying out ion implanting is 1015-1017, energy 5-15KeV.
7. the manufacturing method of inserted graphene PN junction according to claim 1, which is characterized in that first annealing
Temperature is 850-1000 DEG C, and annealing time is 40-80 minutes, and the temperature of second annealing is 900-1500 DEG C, annealing time
It is 30-60 minutes.
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| CN201810759564.1A CN108878268A (en) | 2018-07-11 | 2018-07-11 | A kind of manufacturing method of inserted graphene PN junction |
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| CN201810759564.1A CN108878268A (en) | 2018-07-11 | 2018-07-11 | A kind of manufacturing method of inserted graphene PN junction |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102953118A (en) * | 2012-11-12 | 2013-03-06 | 北京大学 | Single crystal graphene pn node and preparation method thereof |
| JP2013253010A (en) * | 2011-12-01 | 2013-12-19 | Tohoku Univ | Graphene structure, semiconductor device using the same, and manufacturing method therefor |
| KR101571351B1 (en) * | 2015-02-05 | 2015-11-24 | 부산대학교 산학협력단 | Production method of silicon-graphene heterojunction solar cell and silicon-graphene heterojunction solar cell producted by the same |
| EP3015426A1 (en) * | 2014-10-31 | 2016-05-04 | Samsung Electronics Co., Ltd. | Graphene layer, method of forming the same, device including graphene layer and method of manufacturing the device |
| CN105655242A (en) * | 2014-11-21 | 2016-06-08 | 中国科学院上海微***与信息技术研究所 | Preparation methods for doped graphene and graphene-based PN node device |
-
2018
- 2018-07-11 CN CN201810759564.1A patent/CN108878268A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013253010A (en) * | 2011-12-01 | 2013-12-19 | Tohoku Univ | Graphene structure, semiconductor device using the same, and manufacturing method therefor |
| CN102953118A (en) * | 2012-11-12 | 2013-03-06 | 北京大学 | Single crystal graphene pn node and preparation method thereof |
| EP3015426A1 (en) * | 2014-10-31 | 2016-05-04 | Samsung Electronics Co., Ltd. | Graphene layer, method of forming the same, device including graphene layer and method of manufacturing the device |
| CN105655242A (en) * | 2014-11-21 | 2016-06-08 | 中国科学院上海微***与信息技术研究所 | Preparation methods for doped graphene and graphene-based PN node device |
| KR101571351B1 (en) * | 2015-02-05 | 2015-11-24 | 부산대학교 산학협력단 | Production method of silicon-graphene heterojunction solar cell and silicon-graphene heterojunction solar cell producted by the same |
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Application publication date: 20181123 |