CN108832484A - A method of enhancing association photon pair source performance - Google Patents
A method of enhancing association photon pair source performance Download PDFInfo
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- CN108832484A CN108832484A CN201810432234.1A CN201810432234A CN108832484A CN 108832484 A CN108832484 A CN 108832484A CN 201810432234 A CN201810432234 A CN 201810432234A CN 108832484 A CN108832484 A CN 108832484A
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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Abstract
The invention discloses a kind of methods of enhancing association photon pair source performance, include the following steps：The DBR being made of multipair high low-index material is calculated in 1/4 pump wavelengthpReflectivity spectral under thickness；Select the logarithm of high low-index material in the maximum reflectivity high low-index material logarithm N near 0.99, the DBR as final design Waveguide end face in reflectivity spectral；Change DBR high refractive index layer thickness d 1 and low-index layer thickness d 2, and calculates the reflectivity spectral containing N to the DBR of high low-index material under different-thickness；Select pump wavelengthpLocate reflectivity to be higher than 0.99 and be associated with photon to wavelength XsLocate the thickness that reflectivity is lower than 0.02；Photon pair source is associated with for electric pump, calculate wave guide resonance intracavity pump optical power and is associated with photon creation rate, the relation curve with Injection Current；Photon pair source is associated with for optical pumping, comparison does not contain the waveguide of end face DBR, the influence for the association photon logarithm that analysis DBR generates waveguide.
Description
Technical field
The present invention relates to integrated quantum optices field more particularly to a kind of methods of enhancing association photon pair source performance.
Background technique
Association photon pair source is the valuable source in quantum optices information processing, hidden in quantum-key distribution, quantum at present
Shape passes the fields such as state, quantum imaging and quantum storage and has been used widely.Association photon is to having optical pumping and electric pump two
Kind generation mechanism：Nonlinear crystal or waveguide, atomic system and optical fiber base four-wave mixing are that optical pumping generation is associated with photon pair
Common methods, but these methods are both limited by large scale and low photon radiance；In recent years, electric pump quantum dot utilized biexction
Radiation generates association photon and is associated with photon to becoming to generating with conversion under electric pump Bragg reflection Pohle Spontaneous Parametric
It is associated with the hot spot of photon pair source research, but both methods all has that photon is low to generation efficiency.
Optical coating technology is the principle using multiple-beam interference, plated on optical device one layer of (or multilayer) medium (or
Metal) film technical process.Optical thin film has been widely applied to accurate and optical instrument, display apparatus and life at present
Articles for daily use living etc., wherein cavity surface film coating technology is a kind of conventional fabrication process of optical waveguide structure.Swashed with semiconductor
For light device, the distributed Bragg reflector (DBR) being made of multilayer dielectric film is common cavity surface film coating structure, this structure
It can further increase the Output optical power of laser, reduce threshold current, and effective protection its Cavity surface.
Currently, association photon pair source photon is low to generation efficiency, the application of association photon pair source is directly affected, when business
It is suddenly a kind of method for establishing enhancing association photon pair source performance, it is real simultaneously in nonlinear material using cavity surface film coating technology
Now there is high reflectance to the pump light of non-linear process, have high-transmission rate to the association photon of generation, and then enhances non-linear mistake
Journey improves the generation efficiency of association photon pair.
Summary of the invention
The present invention provides a kind of methods of enhancing association photon pair source performance, and the present invention in Waveguide end face by designing
DBR, enhancing association photon improves the generation efficiency of association photon pair to the non-linear process of generation, described below：
A method of enhancing association photon pair source performance the described method comprises the following steps：
The DBR being made of multipair high low-index material is calculated in 1/4 pump wavelengthpReflectivity spectral under thickness；
High low-index material logarithm N of the maximum reflectivity near 0.99 in reflectivity spectral is selected, as final design
The logarithm of high low-index material in the DBR of Waveguide end face；
Change DBR high refractive index layer thickness d 1 and low-index layer thickness d 2, and calculates containing N to high low-index material
Reflectivity spectral of the DBR under different-thickness；
Select pump wavelengthpLocate reflectivity to be higher than 0.99 and be associated with photon to wavelength XsLocate the thickness that reflectivity is lower than 0.02
Degree；
For electric pump be associated with photon pair source, calculate wave guide resonance intracavity pump optical power be associated with photon creation rate,
With the relation curve of Injection Current；Photon pair source is associated with for optical pumping, comparison does not contain the waveguide of end face DBR, analyzes DBR pairs
The influence for the association photon logarithm that waveguide generates.
Wherein, the method also includes：Select two kinds of materials that chemical stability is strong, optical loss is small as end face DBR
The material of high low-index layer.
Further, the relation curve is specially：
ηphoton=Pinternal(1-Rphoton)Flux
Wherein, ηphotonPhoton creation rate, P are associated with for electric pump Bragg reflection waveguideinternalFor electrical injection laser
Generate the internal power of pump light, RphotonIt is association photon to the reflectivity for being emitted end face in DBR, Flux is electric pump Bradley
Lattice reflect the association photon logarithm that waveguide acts on the generation of lower unit time in unit pumping light power.
Wherein, the waveguide and end face DBR are discrete；Or, the waveguide and end face DBR are integrated.
Further, the waveguide is that electric pump Bragg reflection waveguide is associated with photon pair source or optical pumping Bragg waveguide
Or PPKTP waveguide is associated with photon pair source.
When waveguide is that electric pump Bragg reflection waveguide is associated with photon pair source, end face DBR both can be applied to generation 1.3
The association photon pair of GaInP/InGaAlP material near mum wavelength also can be applied to generate near 1.5 mum wavelengths
The association photon pair of AlGaAs/AlGaAs material.
The beneficial effect of the technical scheme provided by the present invention is that：
1, the present invention is directed to establish a kind of method of enhancing association photon pair source performance, by designing DBR in Waveguide end face
Method, while it is high anti-in Waveguide end face to realize pump light, and is associated with photon to high thoroughly in Waveguide end face；
2, invention enhances the pump lights non-linear process in material and the generation efficiency for improving association photon pair；
3, the present invention is suitable for two kinds of waveguides of optical pumping and electric pump to the design of DBR, has wide range of applications；DBR is integrated
Waveguide end face or with waveguiding structure it is discrete, may be implemented pump light and the separation for being associated with photon pair, tool in terms of structure fabrication
There is biggish flexibility.
Detailed description of the invention
Fig. 1 is the structure for the GaInP/InGaAlP electric pump Bragg reflection waveguide association photon pair source that end face integrates DBR
Conversion process schematic diagram under schematic diagram and Spontaneous Parametric；
Fig. 2 is the flow chart for enhancing electric pump association photon pair source performance methodology；
Fig. 3 be the DBR that constitutes of multipair high low-index material under a quarter pumping wavelength thickness reflectivity spectral (with
For 2 couples, 5 couples and 10 couples high low-index layer DBR)；
Fig. 4 is the maximum reflectivity value of quarter-wave DBR and the relation schematic diagram of high low refractive index material layer logarithm；
Fig. 5 is the reflectivity spectral (10 pairs of high low-index layers) of different thicknesses of layers DBR；
Fig. 6 is the Injection Current and interior lights power relation curve that electric pump Bragg reflection waveguide is associated with photon pair source
Schematic diagram；
Fig. 7 be electric pump Bragg reflection waveguide be associated with photon pair source Injection Current, be associated with photon creation rate
Relation curve schematic diagram；
When Fig. 8 is that electric pump Bragg reflection waveguide is associated with photon to source outgoing and both-end outgoing, different pumping is anti-
Penetrate schematic diagram (the intrinsic loss α that rate influences Injection Current and interior lights power relation curvei=20cm-1, the injection of carrier
Efficiency etaiFor 30%)；
When Fig. 9 is that electric pump Bragg reflection waveguide is associated with photon to source outgoing and both-end outgoing, difference association photons
On reflectivity on Injection Current and schematic diagram (the intrinsic loss α that is associated with photon and is influenced on generation efficiency relation curvei=20cm-1,
The injection efficiency η of carrieriFor 30%)；
Figure 10 is that the GaInP/InGaAlP electric pump Bragg reflection waveguide of the discrete DBR in end face is associated with the knot of photon pair source
Structure schematic diagram；
Figure 11 is the index path that optical pumping waveguide Pu is associated with photon pair source；
Figure 12 is the index path that end face integrates that DBR optical pumping waveguide is associated with photon pair source；
Figure 13 is the index path that the discrete DBR optical pumping waveguide in end face is associated with photon pair source.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, embodiment of the present invention is made below further
Ground detailed description.
A kind of method that the embodiment of the present invention is intended to establish enhancing association photon pair source performance, by designing Waveguide end face
The method of DBR, enhancing association photon improves the generation efficiency of association photon pair to the non-linear process of generation, as detailed below to retouch
It states：
The embodiment of the invention provides a kind of methods of enhancing association photon pair source performance, are by rationally designing electric pump
With the DBR of optical pumping waveguide outgoing end face so that pump light has a high reflectance in the end face, at the same the association photon generated to
There is high-transmission rate in the end face.The DBR of Waveguide end face can be divided into Waveguide end face and integrate DBR and two kinds of the discrete DBR in end face, not only fit
For electric pump waveguide, it is also applied for the nonlinear waveguide and nonlinear crystal of optical pumping.The DBR of Waveguide end face, on the one hand mentions
Quality factor of the high pumping light in resonant cavity enhance non-linear process of the pump light in material and improve association photon pair
Generation efficiency；On the other hand reduce association photon to the reflection loss in waveguide, increase the number of outgoing association photon pair.
This method devises the structure of Waveguide end face DBR, and satisfaction has high reflectance to the light of pumping wavelength, and to associated light
Son is to there is high-transmission rate.Wherein, the step of method of enhancing association photon pair source performance is specially：
1) material of two kinds of materials that chemical stability is strong, optical loss is small as end face DBR high low-index layer is selected；
2) DBR being made of multipair high low-index material is calculated in a quarter pumping wavelength (λp) reflection under thickness
Rate spectrum；
3) high low-index material logarithm N of the maximum reflectivity near 0.99 in reflectivity spectral is selected, as finally setting
Count the logarithm of high low-index material in the DBR of Waveguide end face；
4) change DBR high refractive index layer thickness d 1 and low-index layer thickness d 2, and calculate containing N to high low-refraction material
Reflectivity spectral of the DBR of material under different-thickness；
5) pumping wavelength (λ is selectedp) at reflectivity be higher than 0.99 and association photon to wavelength (λs) at reflectivity be lower than 0.02
Thickness (high refractive index layer thickness d 1 and low-index layer thickness d 2), as high low refractive index material layer in Waveguide end face DBR
Thickness；
6) for electric pump be associated with photon pair source, calculate wave guide resonance intracavity pump optical power be associated with photon creation rate
With the relation curve of Injection Current；Photon pair source is associated with for optical pumping, comparison does not contain the waveguide of end face DBR, analyzes DBR pairs
The influence for the association photon logarithm that waveguide generates.
In conclusion the embodiment of the present invention establishes a kind of side of enhancing association photon pair source performance through the above steps
Method, the method by designing DBR in Waveguide end face, while it is high anti-in Waveguide end face to realize pump light, and photon is associated in wave
It is high thoroughly to lead end face.
Embodiment 1
The embodiment of the present invention is that design GaInP/InGaAlP electric pump Bragg reflection waveguide is associated with photon to source face collection
At DBR.
Wherein, end face integrates the structure of the GaInP/InGaAlP electric pump Bragg reflection waveguide association photon pair source of DBR
With transition diagram under Spontaneous Parametric, as shown in Figure 1, the waveguide by electric pump generate pumping wavelength be λp=654nm, has
Imitating refractive index is 3.0305, and it is λ to wavelength that pump light, which passes through conversion process under Spontaneous Parametric to generate association photon,s=1308nm；
Waveguide rear end face is golden film, pump light be associated with photon to the total reflection in the end face, photon is from the single-ended outgoing of front end face；Waveguide
The integrated DBR of front end exit facet, while meeting to pump light (λp=654nm) there is high reflectance, to association photon to (λs=
1308nm) there is high-transmission rate.
Wherein, the step of the structure for the DBR that the design electric pump Bragg reflection waveguide association photon integrates source face
Suddenly it is described below in conjunction with Fig. 2：
1) the material Si that chemical stability is strong, optical loss is small is selected3N4(refractive index is at pump wavelength：2.0369)
And SiO2(refractive index is at pump wavelength：1.4716) material as end face DBR high low-index layer；
2) DBR of multipair high low-index material composition is calculated in a quarter pumping wavelength (λp=654nm) under thickness
Reflectivity spectral, as shown in figure 3, calculate quarter-wave DBR maximum reflectivity value and high low refractive index material layer logarithm
Relationship, as shown in Figure 4；
3) high low-index material logarithm N=10 of the highest reflectivity of reflectivity spectral near 0.99 is selected, as wave
Lead the logarithm of high low-index material in the DBR of end face；
4) end face DBR high refractive index layer (Si is adjusted3N4Layer) 2 (SiO of thickness d 1 and low-index layer thickness d2Layer), and count
The reflectivity spectral of lower 10 couples high low-index material DBR of different-thickness is calculated, as shown in Figure 5；
5) it is obtained according to the calculated result of step 4), as high refractive index layer (Si3N4Layer) with a thickness of d1=92nm, low refraction
Rate layer (SiO2Layer) thickness d 2=106nm when, pumping wavelength (λp=654nm) at reflectivity be Rpump=0.9959, it is associated with photon
To wavelength (λs=1308nm) at transmissivity be Tphoton=0.9902 (at Same Wavelength, transmissivity and reflectivity and for 1),
Meet pump light in high anti-, the association photon of Waveguide end face to the condition saturating in end face height, so selecting this group of thickness as waveguide
The thickness of high low-index material in the DBR of end face；
6) Injection Current and internal pump of the electric pump Bragg reflection waveguide association photon pair source containing end face DBR are calculated
Pu optical power relation curve, and compare the injection of the electric pump Bragg reflection waveguide association photon pair source without containing end face DBR
Electric current and interior lights power relation curve, as shown in fig. 6, electric current and internal optical power meet following relationship；
Wherein, PinternalThe internal power of pump light, η are generated for electrical injection laseriFor the injection efficiency of carrier, αi
For cavity loss, IthFor threshold current, I is Injection Current,For planck constant.
αmFor cavity lens loss, expression formula is as follows：
Wherein, L is that waveguide cavity is long, R1For pump light (λp=654nm) in electric pump Bragg reflection waveguide association photon pair
Reflectivity of the source in front end face DBR, R2For pump light (λp=654nm) in electric pump Bragg reflection waveguide association photon pair source
(rear end face is golden film, R to the reflectivity of rear end face2=1), photon is from the single-ended outgoing of front end face.
7) Injection Current and associated light of the electric pump Bragg reflection waveguide association photon pair source containing end face DBR are calculated
The relation curve of sub- creation rate, and compare the electric pump Bragg reflection waveguide association photon pair source without containing end face DBR
Injection Current and the relation curve for being associated with photon creation rate, as shown in fig. 7, the two meets following relationship：
ηphoton=Pinternal(1-Rphoton)Flux
Wherein, ηphotonPhoton creation rate, R are associated with for electric pump Bragg reflection waveguidephotonTo be associated with photon pair
(1308nm) in the reflectivity of DBR outgoing end face, Flux is that electric pump Bragg reflection waveguide is acted in unit pumping light power
The association photon logarithm that the lower unit time will generate.
Embodiment 2
Below with reference to specific parameter, GaInP/InGaAlP electric pump Prague of DBR is integrated to end face in embodiment 1
The structure and characteristic in source is described in detail in reflection waveguide associated light, described below：
It is GaInP/InGaAlP with quantum well region material, Bragg reflection layer material is that AlGaAs electric pump Prague is anti-
For ejected wave leads the structure of association photon pair source, end face is designed according to above embodiment and integrates DBR, integral device structure is as schemed
Shown in 1 (a), association photon is described below to shown in conversion process such as Fig. 1 (b) under the Spontaneous Parametric of generation：
One, electric pump Bragg reflection waveguide is associated with photon pair source
In the z-direction, component part from the bottom up is：
1) electrode A u under；
2) .N type GaAs substrate：Doping type is N-type, doped chemical Si, with a thickness of 1.4 μm, doping concentration is 2 ×
1019cm-3；
3) .N type Bragg reflecting layer：Doping type is N-type, and doped chemical Si, N-type Bragg reflecting layer is by two kinds of materials
Material is alternately constituted, and totally 6 groups, 12 layers.Al0.95Ga0.05(subscript 0.95 indicates the molar percentage of AlAs in the ternary compound to As
It is 95%, subscript 0.05 indicates that the molar percentage of GaAs in the ternary compound is 5%；Ternary compound subscript below contains
Justice is similar), with a thickness of 199.5nm, Al0.55Ga0.45As is with a thickness of 103.5nm.Each from the bottom up layer of material component and doping
Concentration is：Al0.95Ga0.05As(2×1018cm-3), Al0.55Ga0.45As(1.82×1018cm-3), Al0.95Ga0.05As(1.65×
1018cm-3), Al0.55Ga0.45As(1.48×1018cm-3), Al0.95Ga0.05As(1.3×1018cm-3), Al0.55Ga0.45As
(1.13×1018cm-3), Al0.95Ga0.05As(9.6×1017cm-3), Al0.55Ga0.45As(7.88×1017cm-3),
Al0.95Ga0.05As(6.16×1017cm-3), Al0.55Ga0.45As(4.44×1017cm-3), Al0.95Ga0.05As(2.72×
1017cm-3), Al0.55Ga0.45As(1×1017cm-3)；
4) Quantum Well：It is from the bottom up respectively to build area In0.50Ga0.36Al0.14P (with a thickness of 115.7nm) (0.50 table of subscript
The molar percentage for showing InP in the quaternary compound is 50%, and subscript 0.36 indicates the Mole percent of GaP in the quaternary compound
Than being 36%, subscript 0.14 indicates that the molar percentage of AlP in the quaternary compound is 14%；Quaternary compound subscript below
Meaning is similar), well region Ga0.41In0.59P (with a thickness of 5nm) builds area In0.50Ga0.36Al0.14P (with a thickness of 115.7nm), nothing are mixed
It is miscellaneous；
5) .P type Bragg reflecting layer：Doping type is p-type, and doped chemical C, p-type Bragg reflecting layer is by two kinds of materials
Material is alternately constituted, and totally 6 groups, 12 layers.Al0.55Ga0.45As is with a thickness of 103.5nm, Al0.95Ga0.05As, with a thickness of 199.5nm.From
Under up each layer of material component and doping concentration are respectively：Al0.55Ga0.45As(1×1017cm-3), Al0.95Ga0.05As
(2.72×1017cm-3), Al0.55Ga0.45As(4.44×1017cm-3), Al0.95Ga0.05As(6.16×1017cm-3),
Al0.55Ga0.45As(7.88×1017cm-3), Al0.95Ga0.05As(9.6×1017cm-3), Al0.55Ga0.45As(1.13×1018cm-3), Al0.95Ga0.05As(1.3×1018cm-3), Al0.55Ga0.45As(1.48×1018cm-3), Al0.95Ga0.05As(1.65×
1018cm-3), Al0.55Ga0.45As(1.82×1018cm-3), Al0.95Ga0.05As(2×1018cm-3)；
6) .P type etching barrier layer：Doping type is p-type, doped chemical C, In0.48Ga0.42Al0.10P, with a thickness of
10nm, doping concentration are 7 × 1018cm-3；
7) .P type GaAs protective layer：Doping type is p-type, doped chemical C, with a thickness of 230nm, doping concentration is 2 ×
1019cm-3；
8) top electrode Au.
Wherein, Quantum Well includes well region (Ga0.41In0.59P) He Leiqu (In0.50Ga0.36Al0.14P), Bragg reflection waveguide
Including GaAs substrate, N-type Bragg reflecting layer, p-type Bragg reflecting layer, p-type etching barrier layer, p-type GaAs protective layer.Lower electricity
Pole Au and top electrode Au is used to realize that electrical pumping excitation generates pumping laser.
In the x-direction, component part from back to front is：
1) rear end face：Golden film；To pump light be associated with photon to total reflection；
2) .GaInP/InGaAlP electric pump Bragg reflection waveguide.
Two, DBR
Front end face：End face DBR；High refractive index layer (Si3N4Layer) with a thickness of d1=92nm, low-index layer (SiO2Layer) it is thick
Degree is d2=106nm, pumping wavelength (λp=654nm) at reflectivity be 0.9959, association photon to wavelength (λs=1308nm) at
Transmissivity is 0.9902；
When electric pump Bragg reflection waveguide association photon pair source is single-ended outgoing and both-end outgoing, different pumping is anti-
Penetrating in the case of rate has different electric current and interior lights power relation curve, as shown in Figure 8.It can be seen that single-ended outgoing, pump light
Reflectivity is RpumpWhen=0.9, electric pump Bragg reflection waveguide association photon pair source has minimum threshold electric current and greatest gradient
Efficiency.
When electric pump Bragg reflection waveguide association photon pair source is single-ended outgoing and both-end outgoing, difference association photon
To have under reflectance behavior different electric current be associated with photon creation rate relation curve, as shown in Figure 9.As can be seen that single-ended
Outgoing, association photon are R to reflectivityphotonWhen=0.1, electric pump Bragg reflection waveguide association photon pair source has Minimum Threshold
It is worth electric current and greatest gradient efficiency.
In conclusion when designing the structure of electric pump association photon pair source the structure of single-ended outgoing should be taken, and as far as possible
Improve pump light outgoing end face reflectivity and be associated with photon to be emitted end face transmissivity, to reduce electric pump waveguide
The association photon logarithm of threshold current, the inside optical power for improving pump light and generation.
Embodiment 3
The embodiment of the present invention is that GaInP/InGaAlP electric pump Bragg reflection waveguide association photon is discrete to source face
DBR。
The structure and characteristic of electric pump Bragg reflection waveguide association photon pair source is discussed in detail, detailed in Example 2.End
The GaInP/InGaAlP electric pump Bragg reflection waveguide association photon of the discrete DBR in face is to source structure, as shown in Figure 10, with reality
Apply example 2 the difference is that, DBR in the present embodiment is in outgoing end face and to pump Bragg reflection waveguide be two discrete
Device, and the DBR in embodiment 1 is to be integrated into a device in outgoing end face and pumping Bragg reflection waveguide.
It is discrete to source face that GaInP/InGaAlP electric pump Bragg reflection waveguide of the embodiment of the present invention is associated with photon
For DBR design procedure with embodiment 1, final design result is as follows：
Pumping wavelength (the λ that the Bragg reflection waveguide is generated by electric pumpp=654nm) at effective refractive index rate be
3.0305；It is λ to wavelength that pump light, which passes through conversion process under Spontaneous Parametric to generate association photon,s=1308nm；Waveguide rear end face
For golden film, pump light be associated with photon to the total reflection in the end face, photon is from the single-ended outgoing of front end face；Waveguide front-ends exit facet
There is discrete DBR, is made of 10 pairs of high low-index layers, high refractive index layer (Si3N4Layer) with a thickness of d1=80nm, low refraction
Rate layer (SiO2Layer) meet simultaneously to pump light (λ with a thickness of d2=107nm, the DBRp=654nm) there is high reflectance (Rpump=
0.9937), to association photon to (λs=1308nm) there is high-transmission rate (Tphoton=0.9996).
Embodiment 4
The embodiment of the present invention is that AlGaAs/AlGaAs electric pump Bragg reflection waveguide association photon integrates source face
DBR。
The AlGaAs/AlGaAs electric pump Bragg reflection waveguide that end face integrates DBR is associated with photon to source structure with Fig. 1 class
Seemingly, the difference is that, the quantum well region material of AlGaAs/AlGaAs electric pump Bragg reflection waveguiding structure is
Al0.11Ga0.89As/Al0.45Ga0.55As, other structures and material component are same as Example 1.
AlGaAs/AlGaAs electric pump Bragg reflection waveguide of the embodiment of the present invention is associated with what photon integrated source face
For DBR design procedure with embodiment 1, final design result is as follows：
The waveguiding structure by electric pump generate pumping wavelength be λp=785nm, effective refractive index 3.0976 are spontaneous
Parametric down conversion generates association photon to for λs=1570nm；Waveguide rear end face be golden film, pump light be associated with photon at this
The total reflection of end face, photon is from the single-ended outgoing of front end face；Waveguide front-ends exit facet has the DBR integrated with waveguide, high refractive index
Layer (Si3N4Layer, refractive index is at pump wavelength：With a thickness of d1=75nm and low-index layer (SiO2Layer) thickness d 2=
180nm, the DBR meet to pump light (λ simultaneouslyp=785nm) there is high reflectance (Rpump=0.9928), to association photon to (λs
=1570nm) there is high-transmission rate (Tphoton=0.9854).
Embodiment 5
The embodiment of the present invention is that AlGaAs/AlGaAs electric pump Bragg reflection waveguide association photon is discrete to source face
DBR。
The AlGaAs/AlGaAs electric pump Bragg reflection waveguide of the discrete DBR in end face is associated with photon Figure 10 same to source structure
It is similar, the difference is that, the quantum well region material of AlGaAs/AlGaAs electric pump Bragg reflection waveguiding structure is
Al0.11Ga0.89As/Al0.45Ga0.55As, other structures and material component are same as Example 1.In addition, it is different from embodiment 4,
The present embodiment DBR is two discrete devices in outgoing end face and pumping Bragg reflection waveguide.
It is discrete to source face that AlGaAs/AlGaAs electric pump Bragg reflection waveguide of the embodiment of the present invention is associated with photon
For DBR design procedure with embodiment 1, final design result is as follows：
The waveguiding structure by electric pump generate pumping wavelength be λp=785nm, effective refractive index 3.0976 are spontaneous
Parametric down conversion generates association photon to for λs=1570nm；Waveguide rear end face be golden film, pump light be associated with photon at this
The total reflection of end face, photon is from the single-ended outgoing of front end face；The integrated DBR of waveguide front-ends exit facet, high refractive index layer (Si3N4
Layer) with a thickness of d1=64nm, low-index layer (SiO2Layer) thickness d 2=180nm, the DBR simultaneously meet to pump light (λp=
785nm) there is high reflectance (Rpump=0.9877), to association photon to (λs=1570nm) there is high-transmission rate (Tphoton=
0.9913)。
Embodiment 6
The embodiment of the present invention is the integrated DBR in end face that optical pumping Bragg waveguide or PPKTP waveguide are associated with photon pair source.
There is no the optical pumping Bragg waveguide of end face DBR or PPKTP waveguide association photon to source light path figure, such as Figure 11 institute
Show.Pump light is incident in waveguiding structure, utilizes the second-order optical nonlinearity effect or third order optical nonlinearity of nonlinear material
Effect generates association photon pair.The optical pumping Bragg waveguide or PPKTP waveguide association photon that end face integrates DBR are to source light path
Figure, as shown in figure 12.
Photon pair source comparison, end face DBR are associated with the optical pumping Bragg waveguide of no end face DBR or PPKTP waveguide
Have high reflectance to incident pump wavelength, to waveguide non-linear process generate association photon to there is high-transmission rate, be equivalent to one
A bandpass filter improves the quantity of end face outgoing association photon pair.Meanwhile pump light is almost totally reflected in end face DBR,
Reverse transfer in waveguide realizes non-linear process in waveguide material again, generates the reversed biography for meeting phase-matching condition
Defeated association photon pair improves association photon to generation efficiency, is equivalent to lengthening waveguide length.
Embodiment 7
The embodiment of the present invention is the discrete DBR in end face that optical pumping Bragg waveguide or PPKTP waveguide are associated with photon pair source.Pump
Pu light is incident in waveguiding structure, is produced using the second-order optical nonlinearity effect or third order optical nonlinearity effect of nonlinear material
Raw association photon pair.
The optical pumping Bragg waveguide of end face DBR or PPKTP waveguide association photon are to source light path figure, as shown in figure 13.With
Embodiment 6 is different, and the present embodiment DBR is two discrete devices in outgoing end face and optical pumping Bragg waveguide or PPKTP waveguide
Part.
For the DBR to pumping wave with high reflectance, the photon that generates to waveguide non-linear process is equivalent to there is high-transmission rate
For a bandpass filter, the quantity of end face outgoing association photon pair is improved.Meanwhile meanwhile, pump light is almost complete in end face DBR
Reflection, reverse transfer, realizes non-linear process in waveguide material again in the waveguide, and generation meets phase-matching condition
The association photon pair of reverse transfer improves association photon to generation efficiency, is equivalent to lengthening waveguide length.
The embodiment of the present invention to the model of each device in addition to doing specified otherwise, the model of other devices with no restrictions,
As long as the device of above-mentioned function can be completed.
It will be appreciated by those skilled in the art that attached drawing is the schematic diagram of a preferred embodiment, the embodiments of the present invention
Serial number is for illustration only, does not represent the advantages or disadvantages of the embodiments.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of method of enhancing association photon pair source performance, which is characterized in that the described method comprises the following steps：
The DBR being made of multipair high low-index material is calculated in 1/4 pump wavelengthpReflectivity spectral under thickness；
High low-index material logarithm N of the maximum reflectivity near 0.99 in reflectivity spectral is selected, as final design waveguide
The logarithm of high low-index material in the DBR of end face；
Change DBR high refractive index layer thickness d 1 and low-index layer thickness d 2, and calculates containing N to high low-index material
Reflectivity spectral of the DBR under different-thickness；
Select pump wavelengthpLocate reflectivity to be higher than 0.99 and be associated with photon to wavelength XsLocate the thickness that reflectivity is lower than 0.02；
Photon pair source is associated with for electric pump, calculates wave guide resonance intracavity pump optical power and association photon creation rate and note
Enter the relation curve of electric current；Photon pair source is associated with for optical pumping, comparison does not contain the waveguide of end face DBR, analyzes DBR to waveguide
The influence of the association photon logarithm of generation.
2. a kind of method of enhancing association photon pair source performance according to claim 1, which is characterized in that the method is also
Including：Select material of two kinds of materials that chemical stability is strong, optical loss is small as end face DBR high low-index layer.
3. a kind of method of enhancing association photon pair source performance according to claim 1, which is characterized in that the relationship is bent
Line is specially：
ηphoton=Pinternal(1-Rphoton)Flux
Wherein, ηphotonPhoton creation rate, P are associated with for electric pump Bragg reflection waveguideinternalFor electrical injection laser generation
The internal power of pump light, RphotonIt is association photon to the reflectivity for being emitted end face in DBR, Flux is that electric pump Prague is anti-
Ejected wave, which is led, acts on the association photon logarithm of generation of lower unit time in unit pumping light power.
4. it is according to claim 1 it is a kind of enhancing association photon pair source performance method, which is characterized in that the waveguide with
End face DBR is discrete.
5. it is according to claim 1 it is a kind of enhancing association photon pair source performance method, which is characterized in that the waveguide with
End face DBR is integrated.
6. a kind of method of enhancing association photon pair source performance described in any claim in -5 according to claim 1, special
Sign is that the waveguide is that electric pump Bragg reflection waveguide is associated with photon pair source or optical pumping Bragg waveguide or PPKTP wave
Lead association photon pair source.
7. a kind of method of enhancing association photon pair source performance, feature according to any claim in claim 6
It is, when waveguide is that electric pump Bragg reflection waveguide is associated with photon pair source, end face DBR both can be applied to generate 1.3 μm
The association photon pair of GaInP/InGaAlP material near wavelength also can be applied to generate near 1.5 mum wavelengths
The association photon pair of AlGaAs/AlGaAs material.
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