CN108831963A - A method of copper and iron selenium conductive film is prepared with sulfate - Google Patents
A method of copper and iron selenium conductive film is prepared with sulfate Download PDFInfo
- Publication number
- CN108831963A CN108831963A CN201810705112.5A CN201810705112A CN108831963A CN 108831963 A CN108831963 A CN 108831963A CN 201810705112 A CN201810705112 A CN 201810705112A CN 108831963 A CN108831963 A CN 108831963A
- Authority
- CN
- China
- Prior art keywords
- film
- conductive film
- copper
- iron selenium
- precursor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000010949 copper Substances 0.000 title claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 22
- WALCGGIJOOWJIN-UHFFFAOYSA-N iron(ii) selenide Chemical compound [Se]=[Fe] WALCGGIJOOWJIN-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 21
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000002243 precursor Substances 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims abstract description 9
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 7
- 229910018162 SeO2 Inorganic materials 0.000 claims abstract description 6
- 229910052603 melanterite Inorganic materials 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 239000002904 solvent Substances 0.000 claims abstract description 4
- 239000003125 aqueous solvent Substances 0.000 claims abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000005357 flat glass Substances 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 3
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000008236 heating water Substances 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910052927 chalcanthite Inorganic materials 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 230000035484 reaction time Effects 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 208000033962 Fontaine progeroid syndrome Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- YNBADRVTZLEFNH-UHFFFAOYSA-N methyl nicotinate Chemical compound COC(=O)C1=CC=CN=C1 YNBADRVTZLEFNH-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A method of copper and iron selenium conductive film being prepared with sulfate, belongs to optoelectronic film preparation technical field, the present invention obtains as follows, first cleaning glass substrate, then by CuSO4·5H2O、FeSO4·7H2O and SeO2It is sequentially placed into aqueous solvent, a small amount of salt sour solvent is added after being sufficiently mixed uniformly, prepare clear transparent solutions, precursor thin-film is obtained on the glass sheet with spin-coating method, and naturally dry, be put into hydrazine hydrate can closed container, contact precursor thin-film sample directly with hydrazine, sample is taken out after closed container equipped with precursor thin-film sample is heated to be dried, and can be improved film quality by increasing reaction times and heat treatment process, be obtained copper and iron selenium conductive film.The present invention does not need high temperature high vacuum condition, low to instrument and equipment requirement, and production cost is low, high production efficiency, easily operated.Gained copper and iron selenium conductive film has preferable continuity and uniformity, and this new process provides a kind of industrialized production method at low cost, achievable to prepare high performance copper and iron selenium conductive film.
Description
Technical field
The invention belongs to optoelectronic film preparation technical field used for solar batteries more particularly to a kind of copper is prepared with sulfate
The method of iron selenium conductive film.
Background technique
Copper and iron selenium is a kind of ternary I-III-VI2Compound semiconductor has eskebornite tetragonal crystal structure,
The band gap of copper and iron selenium block materials is 0.16 eV, and it is that a kind of p-type of low band gaps is partly led that the band gap of nanoparticle, which is 0.95 eV,
Body has good application prospect in terms of photoelectricity and solar energy conversion.
The preparation method of copper and iron selenium film has much at present, mainly there is electrochemical deposition method, sputtering method, thermal evaporation, heat
Spray coating method etc..It is a kind of very promising due to raw material rich reserves on earth, cheap and nontoxic
Optoelectronic thin film material, but prior art route is complicated, preparation cost is high, thus need to explore the preparation process of low cost.
Method as previously described is the same, and other methods also have different defects.It is related to the present invention that there are also following documents：
[1]Wen H, Li H, He S, et al. Constructing two-dimensional CuFeSe2@Au
heterostructured nanosheets with an amorphous core and a crystalline shell
for enhanced near-infrared light water oxidation. Nanoscale, 2018.
Mainly have studied CuFeSe2@Au heterogeneous structural nano piece, analyzes CuFeSe2The structure feature of@Au nanometer sheet, and
Their photocatalytic activity and high stability to water oxygen.
[2]Zhang B, Liu Y, Zuo Y, et al. Colloidal Synthesis and
Thermoelectric Properties of CuFeSe2 Nanocrystals. Nanomaterials-Basel, 2018.
It mainly has studied and is prepared for CuFeSe using expansible colloid synthetic method2Nano microcrystalline, while having studied CuFeSe2Material
Ingredient, valence state, size and shape and its photoelectric properties.
[3]Dutkova E, Skorvanek I, Sayagues MJ, Zorkovska A, Kovac J, Balaz
P. Mechanochemically Synthesized CuFeSe2 Nanoparticles and Their Properties.
Acta Phys Pol A, 2017.
It mainly has studied and prepares CuFeSe using mechanochemical reaction2Nano particle has studied CuFeSe2The crystal knot of nano particle
Structure, size, magnetism and photoelectric properties.
[4]Carr WD, Morelli DT. The Thermoelectric Properties and Solubility
Limit of CuFeS2(1-x)Se2x. J Electron Mater, 2016.
Mainly have studied CuFeS2(1-x)Se2xThermoelectric property and solubility limit, with selenium replace CuFeS2Middle sulphur position, has studied
The variation of thermoelectricity capability.
[5]Wang W, Jiang J, Ding T, Wang C, Zuo J, Yang Q. Alternative
Synthesis of CuFeSe2 Nanocrystals with Magnetic and Photoelectric Properties.
Acs Appl Mater Inter, 2015.
It mainly has studied and prepares monodispersed CuFeSe using hot solution injection method2Nanocrystal, and analyze the crystalline substance of sample
Body structure and size, magnetism and photoelectric properties.
[6]Lee PC, Ou MN, Zhong ZW, et al. Nonlinear Thickness and Grain Size
Effects on the Thermal Conductivity of CuFeSe2 Thin Films. Chinese J Phys,
2013.
Mainly film thickness and crystallite dimension are had studied to CuFeSe2The influence of thermal conductivity of thin film.
Summary of the invention
The present invention has invented a kind of with the entirely different copper of existing preparation method to solve the deficiency of existing technology of preparing
The preparation process of iron selenium thin-film material.
The present invention prepares copper and iron selenium thin-film material using spin coating-chemistry co-reducing process, uses sheet glass or silicon wafer for substrate,
With CuSO4·5H2O、FeSO4·7H2O、SeO2CuSO is sequentially added using water and hydrochloric acid as solvent for raw material4·5H2O、
FeSO4·7H2O、SeO2, react it sufficiently.Certain thickness copper and iron selenium precursor thin-film is first prepared with spin-coating method, with hydration
Hydrazine is reducing agent, is heated at a lower temperature in closed container, so that precursor thin-film is restored concurrent GCMS computer reaction, can lead to
Heat treatment improves prepared film quality after crossing increase reaction times and reaction, obtains target product.
Specific preparation method of the invention includes following steps in sequence：
A. the cleaning of substrate is carried out, sheet glass or silicon wafer are switched to by this experimental selection sheet glass or silicon wafer first as substrate
Then 20mm × 20mm × 2mm size is cleaned 2 ~ 3 times as film substrate with deionized water, then pass through dilute sulfuric acid boil 30 ~
40min, 40 ~ 50min of heating water bath, deionized water are cleaned by ultrasonic 20min, after these three important cleaning steps, with dioxygen water logging
Bubble saves backup.
B. by CuSO4·5H2O、FeSO4·7H2O and SeO2It is sequentially placed into solvent, mixes the substance in solution uniformly
It closes.Specifically, by the CuSO of 0.250g4·5H2The water that 1mL is added in O in vial dissolves it sufficiently, then successively toward glass
The FeSO of 0.278g is added in glass bottle4·7H2The SeO of O and 0.221g2Make its full and uniform mixed dissolution, the salt of 0.5mL is added
Acid solution is to clear, wherein the CuSO being added4·5H2O、FeSO4·7H2O、SeO2, aqueous solvent and hydrochloric acid amount can basis
The proportional variation of number of film.
C. the substrate of the external uniform solution as described in step b of production, and dry, obtain precursor thin-film sample.It can incite somebody to action
Above-mentioned solution drips on the substrate being placed on sol evenning machine, restarts sol evenning machine with 200 ~ 3500 revs/min of rotation certain times, makes
After solution coating in drop is uniform, and substrate is carried out after natural drying, repeat to drip again after upper previous solu and spin coating again from
It so dries, so repeatedly 2 ~ 8 times, certain thickness precursor thin-film sample has then been obtained on substrate.
D. precursor thin-film sample obtained by step c is placed on bracket, be put into hydrazine hydrate can closed container, make
Precursor thin-film sample is not contacted with hydrazine.The hydrazine hydrate amount of being put into is 0.5mL.It will be above-mentioned close equipped with precursor thin-film sample
It closes container to be put into baking oven, be heated between 160 ~ 220 DEG C, soaking time 2 ~ 40 hours, be then cooled to room temperature taking-up.
E. it takes out after spontaneously drying, repeats b, c and Step d 2 ~ 6 times, to increase the thickness of prepared film, reduce film
Defect.
F. by step e gains, after spontaneously drying its room temperature, increase heat treatment process, heated in tubular heater
To 200 ~ 400 DEG C, 5 ~ 15 hours are kept the temperature to get copper and iron selenium conductive film is arrived.
The present invention does not need high vacuum condition, low to instrument and equipment requirement, and production cost is low, high production efficiency, is easy to grasp
Make.Gained copper and iron selenium conductive film has preferable continuity and uniformity, main phase CuFeSe2Phase may be implemented inexpensive big
The industrialized production of scale.
Specific embodiment
Embodiment 1
A. the cleaning of glass substrate or silicon chip：Cleaning substrate is carried out as previously described, and size is 20mm × 20mm × 2mm.
It b. can be first by the CuSO of 0.250g4·5H2The water that 1mL is added in O in vial dissolves it sufficiently, then successively
The FeSO of 0.278g is added in vial4·7H2The SeO of O and 0.221g2Make its full and uniform mixed dissolution, 0.5mL is added
Hydrochloric acid solution to clear.
C. above-mentioned solution is dripped in the glass substrate being placed on sol evenning machine, restarts sol evenning machine, sol evenning machine is with 200
Rev/min rotation 5 seconds, with 3000 revs/min rotate 15 seconds, make drop on solution coating it is uniform after, after being dried to substrate, again
It repeats to dry again after dripping upper previous solu and spin coating, is so repeated 6 times, certain thickness presoma has then been obtained on substrate
Film sample.
D. precursor thin-film sample obtained by step c is placed on bracket, be put into hydrazine hydrate can closed container, make
Precursor thin-film sample is not contacted with hydrazine.The hydrazine hydrate amount of being put into is 0.5mL.It will be above-mentioned close equipped with precursor thin-film sample
It closes container to be put into baking oven, be heated between 200 DEG C, soaking time 10 hours, be then cooled to room temperature taking-up.
E. it takes out after spontaneously drying, repeats b, c and Step d 4 times, to increase the thickness of prepared film, reduce film and lack
It falls into.
F. by step e gains, after spontaneously drying its room temperature, increase heat treatment process, heated in tubular heater
To 300 DEG C, 10 hours are kept the temperature to get copper and iron selenium conductive film is arrived.
Claims (5)
1. a kind of method with sulfate preparation copper and iron selenium conductive film, including it is following steps in sequence：
A. the cleaning of glass substrate or silicon chip；
B. by the CuSO of 0.250g4·5H2The water that 1mL is added in O in vial dissolves it sufficiently, then successively in vial
The FeSO of 0.278g is added4·7H2The SeO of O and 0.221g2Make its full and uniform mixed dissolution, the hydrochloric acid solution of 0.5mL is added
To clear；
C. the substrate of solution described in surface even spread step b is made, naturally dry obtains precursor thin-film sample；
D. precursor thin-film sample obtained by step c is placed on bracket, be put into hydrazine hydrate can closed container, make presoma
Film sample is not contacted with hydrazine hydrate；The hydrazine hydrate amount of being put into is 0.5mL；It will be above-mentioned closed equipped with precursor thin-film sample
Container is put into baking oven, is heated between 160 ~ 220 DEG C, soaking time 2 ~ 40 hours, is then cooled to room temperature taking-up；
E. it takes out after spontaneously drying, repeats the above steps 2 ~ 6 times, to increase the thickness of prepared film；
F. by step e gains, after spontaneously drying its room temperature, increase heat treatment process, 200 are heated in tubular heater
~ 400 DEG C, 5 ~ 15 hours are kept the temperature to get copper and iron selenium conductive film is arrived.
2. a kind of method with sulfate preparation copper and iron selenium conductive film as described in claim 1, which is characterized in that step a
Sheet glass or silicon wafer are switched to 20mm × 20mm × 2mm size as film substrate, are then cleaned with deionized water by the cleaning
It 2 ~ 3 times, then passes through dilute sulfuric acid and boils 30 ~ 40min, 40 ~ 50min of heating water bath, deionized water ultrasonic cleaning 20min, this three
After a important cleaning step, saved backup with hydrogen peroxide dipping.
3. a kind of method with sulfate preparation copper and iron selenium conductive film as described in claim 1, which is characterized in that step b
The solvent is aqueous solution, and the CuSO being wherein added4·5H2O、FeSO4·7H2O、SeO2, aqueous solvent and hydrochloric acid amount can root
According to the proportional variation of number of film.
4. a kind of method with sulfate preparation copper and iron selenium conductive film as described in claim 1, which is characterized in that step c
The substrate uniformly smeared is by sol evenning machine spin coating, and sol evenning machine is rotated with 200 ~ 3500 revs/min, is then carried out to substrate
After drying, so repeats 2 ~ 8 times again, obtained certain thickness precursor thin-film sample.
5. a kind of method with sulfate preparation copper and iron selenium conductive film as described in claim 1, which is characterized in that step d
0.5mL hydrazine hydrate is put into the closed container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810705112.5A CN108831963A (en) | 2018-07-01 | 2018-07-01 | A method of copper and iron selenium conductive film is prepared with sulfate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810705112.5A CN108831963A (en) | 2018-07-01 | 2018-07-01 | A method of copper and iron selenium conductive film is prepared with sulfate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108831963A true CN108831963A (en) | 2018-11-16 |
Family
ID=64134892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810705112.5A Withdrawn CN108831963A (en) | 2018-07-01 | 2018-07-01 | A method of copper and iron selenium conductive film is prepared with sulfate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108831963A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103396009A (en) * | 2013-07-09 | 2013-11-20 | 山东建筑大学 | Method for preparing copper-aluminum-tellurium film |
| WO2015004666A1 (en) * | 2013-07-11 | 2015-01-15 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. | Thermal doping by vacancy formation in nanocrystals |
| CN105529243A (en) * | 2015-12-16 | 2016-04-27 | 山东建筑大学 | Method for copper indium diselenide optoelectronic film by sulphate system in two-step process |
| CN105914246A (en) * | 2016-06-15 | 2016-08-31 | 山东建筑大学 | Method for using copper sulphate and gallium nitrate to prepare copper gallium selenide photoelectric film |
-
2018
- 2018-07-01 CN CN201810705112.5A patent/CN108831963A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103396009A (en) * | 2013-07-09 | 2013-11-20 | 山东建筑大学 | Method for preparing copper-aluminum-tellurium film |
| WO2015004666A1 (en) * | 2013-07-11 | 2015-01-15 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. | Thermal doping by vacancy formation in nanocrystals |
| CN105529243A (en) * | 2015-12-16 | 2016-04-27 | 山东建筑大学 | Method for copper indium diselenide optoelectronic film by sulphate system in two-step process |
| CN105914246A (en) * | 2016-06-15 | 2016-08-31 | 山东建筑大学 | Method for using copper sulphate and gallium nitrate to prepare copper gallium selenide photoelectric film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Abd-Ellah et al. | Enhancement of solar cell performance of p-Cu2O/n-ZnO-nanotube and nanorod heterojunction devices | |
| Gayen et al. | Effect of series and shunt resistance on the photovoltaic properties of solution-processed zinc oxide nanowire based CZTS solar cell in superstrate configuration | |
| CN102603201A (en) | Method for preparing cuprous selenide thin film | |
| Zheng et al. | Optical properties of ZnO nanorod films prepared by CBD method | |
| CN105552236A (en) | Perovskite solar cell and preparation method thereof | |
| CN107445204A (en) | A kind of method for preparing transient metal chalcogenide compound nano flake and vanadium disulfide, two selenizing vanadium nano flakes | |
| CN103833416B (en) | A kind of chemical solution deposition preparation method of the sour lanthanum conductive film of nickel | |
| Chen et al. | Efficient planar perovskite solar cells with low-temperature atomic layer deposited TiO2 electron transport layer and interfacial modifier | |
| CN102603202A (en) | Method for preparing tin selenide photoelectric thin film | |
| Liu et al. | Upscaling perovskite solar cells via the ambient deposition of perovskite thin films | |
| Zheng et al. | Enhancing the performance and stability of carbon-based CsPbI2Br perovskite solar cells via tetrabutylammonium iodide surface passivation | |
| CN102153288A (en) | Method for preparing copper disulfide thin film with preferred orientation | |
| Zi et al. | Sputtering Al2O3 as an effective interface layer to improve open-circuit voltage and device performance of Sb2Se3 thin-film solar cells | |
| Balaji et al. | Morphological and optical evolution of different organic acids used MoO3 thin films by spin coating method | |
| CN108831963A (en) | A method of copper and iron selenium conductive film is prepared with sulfate | |
| CN104022189A (en) | Method for preparing ZnO/ZnS composite optoelectronic film | |
| CN105449103B (en) | A kind of film crystal silicon perovskite heterojunction solar battery and preparation method thereof | |
| CN108878557A (en) | A method of copper and iron selenium conductive film is prepared with chloride | |
| CN108831965A (en) | A method of copper and iron selenium conductive film is prepared with nitrate | |
| CN108878556A (en) | A method of preparation copper and iron selenium conductive film is assisted with selenium powder | |
| CN106830072B (en) | A kind of preparation method of titanium dioxide nanowire array | |
| CN108807560A (en) | A method of it is assisted preparing copper and iron sulphur optoelectronic film with sulphur powder | |
| CN102629632B (en) | CIGS nanostructure thin-film photovoltaic battery and preparation method thereof | |
| CN106601873B (en) | A kind of spin coating device for CZTS films and the method for preparing CZTS batteries | |
| CN106024976A (en) | Method for preparing copper gallium sulfide photoelectric thin film from copper chloride |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181116 |
|
| WW01 | Invention patent application withdrawn after publication |