CN108831956B - Flexible solar cell copper indium gallium diselenide manufacturing equipment - Google Patents
Flexible solar cell copper indium gallium diselenide manufacturing equipment Download PDFInfo
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- CN108831956B CN108831956B CN201810615111.1A CN201810615111A CN108831956B CN 108831956 B CN108831956 B CN 108831956B CN 201810615111 A CN201810615111 A CN 201810615111A CN 108831956 B CN108831956 B CN 108831956B
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- cavity
- solar cell
- control unit
- indium gallium
- copper indium
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- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title claims abstract description 22
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000523 sample Substances 0.000 claims description 12
- 238000012544 monitoring process Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 230000009347 mechanical transmission Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000012937 correction Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 239000011669 selenium Substances 0.000 description 4
- 238000004804 winding Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a flexible solar cell copper indium gallium diselenide manufacturing device. The flexible solar cell copper indium gallium diselenide manufacturing equipment monitors mechanical driven in real time, automatically corrects reel-to-reel speed tension, separately protects a linear source heating unit, monitors heating temperature on line, controls in real time, and simultaneously can be vacuumized step by step through a diffusion pump and a mechanical pump set, so that stability of a process environment is guaranteed.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to copper indium gallium diselenide manufacturing equipment of a flexible solar cell.
Background
With global warming, ecological environment deterioration and shortage of conventional energy, solar energy has become an important strategic decision for sustainable development in various countries. A solar cell is a device for converting solar energy into electric energy, and has energy sources exceeding electric energy, wind energy and other resources, and is hopeful to become an important support in the future power industry. Solar cells are largely classified into silicon solar cells, compound semiconductor thin film cells, organic polymer cells, organic thin film cells, and the like. The copper indium gallium diselenide (CIGS) thin film solar cell belongs to a semiconductor thin film cell, and has the advantages of strong light absorption capacity, good discharge stability, high conversion efficiency and the like, and the copper indium gallium diselenide (CIGS) thin film solar cell has wide market prospect because the copper indium gallium diselenide has a direct band gap structure and has higher absorption coefficient, and the film layer can fully absorb incident light with the capacity larger than the width of the copper indium gallium diselenide thin film strip only reaching a micron level, so that a large amount of raw materials can be saved, and the influence of the price promotion of rare elements and the shortage of the raw materials is relatively small.
The manufacturing of copper indium gallium diselenide film on a flexible solar cell is carried out at high temperature by using a three-step co-steaming method in the prior art, the partitioned protection and real-time monitoring of linear sources cannot be carried out, the transmission stability at high temperature cannot be ensured, the tension cannot be monitored in real time and corrected automatically, the linear arrangement of each individual source is not partitioned protection and on-line monitoring, and when the co-steaming method is used, the cavity is filled with metal vapor and the vacuum of the whole environment cannot be ensured.
Disclosure of Invention
In order to solve the technical problems, the invention designs copper indium gallium diselenide manufacturing equipment for the flexible solar cell.
The invention adopts the following technical scheme:
the utility model provides a flexible solar cell copper indium gallium selenium manufacture equipment, which comprises a cavity and a control unit, control unit connects control center, the cavity includes cavity and cavity down, go up cavity and cavity pressfitting are airtight down, be provided with mechanical transmission unit in the cavity down, the vacuum unit, the heating unit, cooling unit and film deposition source unit, mechanical transmission unit includes the unreeling roller, wind-up roller and a plurality of driving rollers, go up the interior rotation connection unreeling roller of cavity, wind-up roller and a plurality of driving rollers, unreeling roller and wind-up roller terminal fixed connection servo motor, a plurality of driving rollers link into conveying passageway between unreeling roller and the wind-up roller, film deposition source unit includes linear source box and XRF detection device, correspond the conveying passageway in the cavity down and be provided with a plurality of linear source boxes respectively, the intermediate position and the end of conveying passageway correspond respectively and are provided with XRF detection device, the heating unit includes heater and temperature sensor, be provided with temperature sensor in the position that the linear source box corresponds respectively on the conveying passageway, be provided with linear source in every linear source box, every linear source box bottom is provided with the heat-up opening, every linear source is provided with a heater, control unit passes through wire, XRF detection device, the vacuum servo unit and cooling unit.
Preferably, the vacuum system comprises a diffusion pump and a mechanical pump group, which are communicated with the control unit through wires.
Preferably, a high-pressure valve is arranged between the diffusion pump and the cavity.
Preferably, the tail end of the conveying channel is provided with a mechanically driven detector, the mechanically driven detector comprises a semicircular fixed block, a probe, a signal transmitter and a signal receiver, the semicircular fixed block, the probe, the signal transmitter and the signal receiver are fixedly arranged at the tail end of the driving roller, the probe is fixedly communicated with a high-frequency power supply, the tail end of the probe is lapped with the semicircular fixed block, the signal receiver is communicated with the semicircular fixed block, and the signal receiver is communicated with the control unit through a wire. With the rotation of the driving roller, the probe is intermittently contacted with the semicircular fixed block, and the control unit monitors whether the driven driving roller rotates at normal frequency or not through the signal frequency received by the signal receiver.
Preferably, an ion gauge is arranged at each linear source box in the cavity, and the ion gauges are communicated with the control unit through wires.
Preferably, the front end of the conveying channel is provided with a speed sensor and a tension sensor, and the speed sensor and the tension sensor are communicated with the control unit through wires. The speed sensor and the tension sensor are used for monitoring data, and the control unit feeds back and adjusts the rotation speed of the unwinding roller and the winding roller private clothing motor, so that the tension is automatically corrected and adjusted.
Preferably, the cooling unit comprises a cooling water filtering device, the cooling water filtering device is arranged at the vacuumizing ports at two sides in the cavity, and Se vapor is condensed and filtered.
Preferably, a heating plate is arranged in the conveying channel positioned on the back surface of the solar panel substrate, and the heating plate keeps the reaction temperature at the position of the solar panel substrate uniform.
Compared with the prior art, the flexible solar cell copper indium gallium diselenide manufacturing equipment has the beneficial effects that:
1. the servo motor controls the mechanical transmission of the motor, simultaneously utilizes a speed sensor and a tension sensor to perform online monitoring and real-time feedback on the speed and the tension, and uses a double closed-loop control system to adjust the roll-to-roll tension and the speed in real time, so that the control stability of the servo is improved;
2. the detector for mechanical driven is added, the real-time mechanical driven is monitored on line, the high-low level change is utilized to detect the transmission persistence, so that the closed environment is monitored in a diversified manner, the roll-to-roll tension and correction can be automatically corrected, and the stability of the whole high-temperature mechanical transmission is realized;
3. during co-evaporation, the linear arrangement sequence of the copper indium gallium diselenide metal sources is improved, the linear source heating units are separately protected and are independently heated, so that the sources can be fully reflected and are not mutually interfered, the growth of crystal grains is promoted, and a film layer with large crystal grain size and compactness is obtained;
4. when the metal source is heated, heating feedback is monitored online through a temperature sensor, real-time control is performed, the XRF detects the thickness of each source, and meanwhile, the temperature is fed back to a computer through a control unit, after calculation is performed by the computer, calculation and PID adjustment are performed on feedback data according to a process set value, so that automatic control of the thickness and the temperature of the metal source is realized;
5. in the whole vacuum system, the equipment is vacuumized step by step, when the equipment is in a high vacuum state, the vacuum degree of each zone is monitored, an ion gauge and a control unit thereof are used for monitoring the Se vapor pressure and the vacuum degree of each zone, the Se vapor pressure and the vacuum degree are fed back to a computer, and PID is used for regulating the vapor pressure of each zone to be in a set value, so that the full selenizing reaction environment of a metal source of each zone is ensured;
6. in the whole operation interface control, each system of the whole equipment can be controlled by only one computer, so that the operation is convenient, the interlocking protection is carried out on each operation, the corresponding operation can be started when the starting condition is met, the operation protection is carried out on the whole equipment, and the loss caused by misoperation is avoided.
Drawings
FIG. 1 is a schematic view of a construction of the present invention;
in the figure: 1. the solar cell coil comprises an upper cavity, a lower cavity, an unreeling roller, a winding roller, a driving roller, a flexible solar cell coil, a linear source box, an XRF detection device, a temperature sensor, a high-pressure valve, a diffusion pump, a mechanical pump set and an XRF detection device.
Description of the embodiments
The technical scheme of the invention is further specifically described by the following specific embodiments with reference to the accompanying drawings:
examples: as shown in figure 1, the flexible solar cell copper indium gallium diselenide manufacturing equipment comprises a cavity and a control unit, wherein the control unit is connected with the control center, the cavity comprises an upper cavity 1 and a lower cavity 2, the upper cavity and the lower cavity are pressed and sealed, a mechanical transmission unit, a vacuum unit, a heating unit, a cooling unit and a film deposition source unit are arranged in the cavity, the mechanical transmission unit comprises an unreeling roller 3, a reeling roller 4 and a plurality of transmission rollers 5, the unreeling roller, the reeling roller and the plurality of transmission rollers are rotationally connected in the upper cavity, the tail ends of the unreeling roller and the reeling roller are fixedly connected with a servo motor, a plurality of transmission rollers between the unreeling roller and the reeling roller are connected into a conveying channel, the film deposition source unit comprises a linear source box 7 and an XRF detection device 8, a plurality of linear source boxes are respectively arranged in the lower cavity corresponding to the conveying channel, and XRF detection devices are respectively arranged in the middle position and tail ends of the conveying channel correspondingly, the heating unit comprises a heater and a temperature sensor 9, the corresponding positions of the linear source boxes on the conveying channel are respectively provided with the temperature sensor, the upper end of each linear source box is provided with an opening, a linear source is arranged in each linear source box, the bottom of each linear source is provided with the heater, the control unit is communicated with the servo motor, the XRF detection device, the temperature sensor, the heater, the vacuum unit and the cooling unit through wires, the vacuum system comprises a diffusion pump 11 and a mechanical pump set 12, the diffusion pump and the mechanical pump set are communicated with the control unit through wires, a high-pressure valve 10 is arranged between the diffusion pump and the cavity, the tail end of the conveying channel is provided with a mechanically driven detector, the mechanically driven detector comprises a semicircular fixing block fixedly arranged at the tail end of a driving roller, a probe, a signal transmitter and a signal receiver, the probe is fixedly communicated with a high-frequency power supply, the tail end of the probe is overlapped with the semicircular fixing block, the signal receiver is communicated with the semicircular fixing block and is communicated with the control unit through a wire. Along with the rotation of driving roller, the intermittent contact semicircular fixed block of probe, whether control unit monitors driven driving roller normal frequency through signal frequency that signal receiver accepted and rotates, and every linearity source box department is provided with the ion gauge in the cavity, and the ion gauge passes through wire intercommunication control unit, and the conveying passageway front end is provided with speed sensor and tension sensor, and speed sensor and tension sensor pass through wire intercommunication control unit. Through the data monitoring of speed sensor and tension sensor, the control unit feedback adjusts the rotational speed of unreeling roller and wind-up roll private clothes motor to automatic correction adjusts tension, and cooling unit includes cooling water filter equipment, and cooling water filter equipment sets up in the cavity both sides evacuation mouth department, condensation filtration Se vapor.
When the flexible solar cell copper indium gallium diselenide manufacturing equipment is used, a flexible solar cell roll 6 is placed into an unreeling roller to unreel, the flexible solar cell roll is conveyed along a driving roller and finally enters a winding roller to be reeled, each linear source box linear source corresponds to be heated and coated, meanwhile, a temperature sensor senses temperature to a control unit, an XRF detection device detects the thickness of a linear source film, if the detected thickness is too large, the control unit correspondingly adjusts a heater at the bottom of the corresponding linear source box, the heating temperature is reduced, if the detected thickness is insufficient, the control unit correspondingly adjusts the heater at the bottom of the corresponding linear source box, and the heating temperature is improved until the required coating thickness is reached.
The flexible solar cell copper indium gallium diselenide manufacturing equipment monitors mechanical driven in real time, automatically corrects reel-to-reel speed tension, separately protects a linear source heating unit, monitors heating temperature on line, controls in real time, and simultaneously can be vacuumized step by step through a diffusion pump and a mechanical pump set, so that stability of a process environment is guaranteed.
The above-described embodiment is only a preferred embodiment of the present invention, and is not limited in any way, and other variations and modifications may be made without departing from the technical aspects set forth in the claims.
Claims (4)
1. The flexible solar cell copper indium gallium diselenide manufacturing equipment comprises a cavity and a control unit, wherein the control unit is connected with a control center, the cavity comprises an upper cavity and a lower cavity, the upper cavity and the lower cavity are in pressing sealing, and the flexible solar cell copper indium gallium diselenide manufacturing equipment is characterized in that a mechanical transmission unit, a vacuum unit, a heating unit, a cooling unit and a film deposition source unit are arranged in the cavity;
when the metal source is heated, the temperature sensor performs on-line monitoring and real-time control on temperature feedback, and when XRF detects the thickness of each source, the temperature sensor also feeds back to a computer through a control unit, and after the computer performs calculation, each feedback data is calculated and PID regulated according to a process set value, so that the automatic control of the thickness and the temperature of the metal source is realized;
an ion gauge is arranged at each linear source box in the cavity and is communicated with the control unit through a lead, the Se vapor pressure and the vacuum degree of each zone are monitored by using the ion gauge and the control unit thereof and fed back to a computer, and the vapor pressure of each zone is regulated to be at a set value by using PID, so that the full selenizing reaction environment of the metal source of each zone is ensured;
the vacuum unit comprises a diffusion pump and a mechanical pump group, a vacuumizing port is arranged in the cavity, the diffusion pump and the mechanical pump group are communicated with the vacuumizing port, the diffusion pump and the mechanical pump group are communicated with the control unit through wires, equipment is vacuumized step by step in the whole vacuum unit, and the vacuum degree of each area is monitored when the equipment is in a high vacuum state;
the tail end of the conveying channel is provided with a mechanically driven detector, the mechanically driven detector comprises a semicircular fixed block, a probe, a signal transmitter and a signal receiver, the tail end of the driving roller is fixedly arranged, the probe is fixedly communicated with a high-frequency power supply, the tail end of the probe is overlapped with the semicircular fixed block, the signal receiver is communicated with a control unit through a wire, the mechanically driven detector is added, the mechanically driven detector is monitored on line in real time, the continuity of transmission is detected by utilizing the change of high and low levels, the diversified monitoring of the closed environment is realized, the tension and correction of the coil-to-coil can be automatically corrected, and the stability of the whole high-temperature mechanical transmission is realized;
the front end of the conveying channel is provided with a speed sensor and a tension sensor, the speed sensor and the tension sensor are communicated with a control unit through wires, the speed sensor and the tension sensor are utilized to perform online monitoring and real-time feedback on the speed and the tension, a double closed-loop control system is used for adjusting the reel-to-reel tension and the speed in real time, and the control stability of a server is improved.
2. The flexible solar cell copper indium gallium diselenide manufacturing equipment according to claim 1, wherein a high-pressure valve is arranged between the diffusion pump and the cavity.
3. The flexible solar cell copper indium gallium diselenide manufacturing equipment according to claim 1, wherein the cooling unit comprises a cooling water filtering device, the cooling water filtering device is arranged at two vacuumizing ports in the cavity, and Se vapor is condensed and filtered.
4. The flexible solar cell copper indium gallium diselenide manufacturing equipment according to claim 1, wherein a heating plate is arranged in a conveying channel positioned on the back surface of the solar cell panel substrate, and the heating plate keeps the reaction temperature at the position of the solar cell panel substrate uniform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810615111.1A CN108831956B (en) | 2018-06-14 | 2018-06-14 | Flexible solar cell copper indium gallium diselenide manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810615111.1A CN108831956B (en) | 2018-06-14 | 2018-06-14 | Flexible solar cell copper indium gallium diselenide manufacturing equipment |
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| Publication Number | Publication Date |
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| CN108831956A CN108831956A (en) | 2018-11-16 |
| CN108831956B true CN108831956B (en) | 2023-12-15 |
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| CN201810615111.1A Active CN108831956B (en) | 2018-06-14 | 2018-06-14 | Flexible solar cell copper indium gallium diselenide manufacturing equipment |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110344019A (en) * | 2019-06-25 | 2019-10-18 | 北京汉能薄膜发电技术有限公司 | A kind of vacuum chamber of copper indium gallium selenide filming equipment |
| CN114686836B (en) * | 2022-03-28 | 2023-08-22 | 尚越光电科技股份有限公司 | XRF detection structure of roll-to-roll copper indium gallium diselenide evaporation |
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| CN101599515A (en) * | 2004-03-05 | 2009-12-09 | 索里布罗研究公司 | CIGS technology is carried out the method and apparatus of in-line arrangement process control |
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| CN102492923A (en) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | Method for roll-to-roll online controlled deposition of absorption layer on flexible substrate |
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| DE102016112869A1 (en) * | 2016-07-13 | 2018-01-18 | Von Ardenne Gmbh | Transport arrangement and processing arrangement and method for operating this |
| WO2018016947A1 (en) * | 2016-07-18 | 2018-01-25 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Deposition arrangement and method for depositing |
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2018
- 2018-06-14 CN CN201810615111.1A patent/CN108831956B/en active Active
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|---|---|---|---|---|
| CN101599515A (en) * | 2004-03-05 | 2009-12-09 | 索里布罗研究公司 | CIGS technology is carried out the method and apparatus of in-line arrangement process control |
| CN102443779A (en) * | 2011-12-08 | 2012-05-09 | 尚越光电科技有限公司 | Plasma assisted selenylation technology and device for preparing copper-indium-gallium-selenium film |
| CN102492923A (en) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | Method for roll-to-roll online controlled deposition of absorption layer on flexible substrate |
| DE102016112869A1 (en) * | 2016-07-13 | 2018-01-18 | Von Ardenne Gmbh | Transport arrangement and processing arrangement and method for operating this |
| WO2018016947A1 (en) * | 2016-07-18 | 2018-01-25 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Deposition arrangement and method for depositing |
| CN106319473A (en) * | 2016-08-31 | 2017-01-11 | 湘潭宏大真空技术股份有限公司 | CIGS solar cell film production line |
| CN106783667A (en) * | 2017-02-23 | 2017-05-31 | 浙江尚越新能源开发有限公司 | Ensure the production system and its manufacture method of uniformity and the alkali doped of stability in flexible copper indium gallium selenide thin-film solar cell |
| CN206872938U (en) * | 2017-06-28 | 2018-01-12 | 深圳市天星达真空镀膜设备有限公司 | Fexible film gap winds magnetic control sputtering vacuum coating machine |
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| CN108831956A (en) | 2018-11-16 |
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