CN108828718A - A method of improving glass based optical waveguide chip uniformity - Google Patents
A method of improving glass based optical waveguide chip uniformity Download PDFInfo
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- CN108828718A CN108828718A CN201810621236.5A CN201810621236A CN108828718A CN 108828718 A CN108828718 A CN 108828718A CN 201810621236 A CN201810621236 A CN 201810621236A CN 108828718 A CN108828718 A CN 108828718A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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Abstract
The present invention relates to a kind of methods for improving glass based optical waveguide chip uniformity, including：S1, in ready glass substrate make optical waveguide formed it is mask used；S2, the glass substrate for forming optical waveguide exposure mask is carried out to ion exchange formation surface optical waveguide；S3, the mask used of etching process removal optical waveguide formation is utilized；S4, external barrier layer is made in glass substrate surface by micrometer-nanometer processing technology；S5, the glass substrate of external barrier layer forms buried type ion doped region using electric-field-assisted ion migrating technology production；S6, optical waveguide is formed using micrometer-nanometer processing technology removal external barrier layer.During carrying out electric-field-assisted ion migration production buried light waveguide, due in glass substrate on the superficial layer of " white space " high resistivity external barrier layer presence, the resistance of " white space " is increased in glass substrate, the temperature rise amplitude for inhibiting glass substrate, improves the uniformity of glass substrate optical waveguide burying depth.
Description
Technical field
The invention belongs to optical device, integrated optics technique improvement areas more particularly to a kind of uses by glass substrate
The method of uniformity during surface production external barrier layer raising ion exchange optical waveguide chip optical waveguide.
Background technique
1969, S. E. Miller proposed the concept of integrated optics, and basic thought is in same substrate（Or base
Piece）Surface make optical waveguide, and realize light source, coupler, filter, modulator, the various devices such as switch based on this
Integrated production.By this integrated, miniaturization, lightweight, stabilisation and the high performance of optical system are realized.
Business circles and researchers are constantly subjected to using the integrated optical device that ion-exchange makes on a glass substrate
Pay attention to.Glass base integrated optical wave guide device based on ion exchange technique has some excellent properties, including：Transmission loss
It is low, it is easy to adulterate the rare earth ion of high concentration, is matched with the optical characteristics of optical fiber, coupling loss is small, and environmental stability is good, is easy to
It is integrated, it is low in cost etc..1970s, first paper publishing about ion exchange production optical waveguide indicate glass
The starting of glass base integrated optical device research.Since then, research institution of various countries puts into a large amount of manpower and financial resources and carries out glass
The exploitation of base integrated optical device.So far, the integrated optical device in some glass substrates has been carried out scale and series
Change, and is successfully used to optic communication, light network and light sensing network, and show huge competitiveness.
Usually used ion exchange technique, as shown in Figure 1, being to make film on glass substrate (1) surface（With a thickness of Asia
The dielectric substances such as metal materials or SiO2 such as Al, Cr-Au of the micron order of magnitude）, and ion exchange window is formed on film
Mouthful, it forms optical waveguide and forms mask used (2).Then the glass substrate (1) for forming mask used (2) with optical waveguide is put into
Fused salt (3) containing Doped ions（Doped ions are usually Ag+, Tl+ or Cs+ etc.）Middle carry out ion exchange contains doping
Doped ions in the fused salt (3) of ion form the ion exchange window and glass base of mask used (2) formation by optical waveguide
Na+ in piece (1) is swapped, and Doped ions enter glass substrate (1) and form the ion doped region (4) of glass surface, is made
For the sandwich layer of surface optical waveguide.In ion doped region (4) forming process of glass surface, since the transverse direction of Doped ions expands
It dissipates, the ion doped region (4) of glass surface is in flat, therefore its Optical Waveguide Modes field distribution is asymmetric, optical waveguide and optical fiber
Coupling loss is very big；On the other hand, the ion doped region (4) of glass surface is located at the surface of glass substrate (1), and optical guided wave is in glass
Scattering at glass surface defect will introduce very high transmission loss.
The optical waveguide of production buried type can improve the symmetry of optical waveguide core layer index distribution, therefore can make light wave
The symmetry of guided mode field distribution is improved, and the coupling loss of fiber waveguide device and optical fiber is reduced.Meanwhile making the core of optical waveguide
Embedded in glass surface reduces the transmission loss of device hereinafter, the scattering of optical guided wave caused by glass surface defects can be eliminated.It buries
The production of formula optical waveguide generallys use the mode of electric-field-assisted ion migration.As shown in Fig. 2, to the glass after primary ions exchange
Substrate (1) carries out electric-field-assisted ion migration.In the process, the fused salt without Doped ions (5) is located at glass substrate
(1) two sides, as electrode.It is inserted into two contact conductors (6) respectively in the fused salt (5) without Doped ions of two sides, this two
Root contact conductor (6) is separately connected the positive electrode and negative electrode of DC power supply（Ion doped region (4) side of glass surface
Contact conductor connect positive electrode）, apply Dc bias in the two sides of glass substrate (1).Under the action of this Dc bias, glass
The ion doped region (4) on glass surface is buried into glass substrate (1), is formed buried type ion doped region (7).
In electric-field-assisted ion transition process, the joule heating effect in glass substrate (1) will affect made optical waveguide
Uniformity, and influence the uniformity of device performance.Under DC electric field effect, glass substrate can generate electric current, phase in (1)
Ying Di, the electric current generate Joule heat in glass substrate (1).Studies have shown that in common production glass based optical waveguide device
Under technical conditions, joule thermal power makes the temperature rise amplitude of glass substrate (1) reach 20 ~ 50 DEG C.In this case, due to glass base
The central temperature of the difference at piece (1) center and edge radiating condition, glass substrate (1) can be higher than lip temperature.This temperature
Difference generates the difference of glass substrate (1) intermediate ion mobility, and therefore, final optical waveguide burying depth obtained is in glass base
The center and peripheral of piece (1) can generate difference：Waveguide burying depth positioned at glass substrate (1) center is deeper, and is located at
The waveguide burying depth of glass substrate (1) marginal position is shallower.Moreover, electric-field-assisted ion migration time it is longer, it is this not
Uniformity is more obvious；Device size is bigger, and the inhomogeneities of the optical waveguide of different parts can also become more significant.For example, exist
In some medical laser non-invasive therapy equipment in used multimode lightguide coupler, burying depth reaches 100 microns
The order of magnitude.In this case, joule heating effect becomes can not ignore.The difference of this burying depth will affect made device
Performance and yield rate.
Summary of the invention
The purpose of the present invention is to provide a kind of methods for improving glass based optical waveguide chip uniformity, it is intended to solve to reduce
The problem of joule heating effect in buried light waveguide manufacturing process.
The technical solution adopted by the present invention to solve the technical problems is characterized in：By in glass substrate glass surface from
" white space " of sub- doped region side（There is no the region of optical waveguide）Surface on add and be fabricated to the outer of high resistivity
Barrier layer.In external barrier layer and forming process, and the ion doped region of the glass surface after formation does not contact；With formed
Buried type ion doped region after Cheng Zhong, and formation does not also contact.
The external barrier layer of this high resistivity is obtained by micrometer-nanometer processing technology.Due to external barrier layer under electric field action not
It can be electrolysed generation monovalent cation, therefore the glass material part of external barrier layer covering is carrying out electric-field-assisted ion migration production
Huge resistance is shown during buried light waveguide, effectively inhibits in glass substrate the joule thermal effect of " white space "
It answers, simultaneously as " white space " external barrier layer does not contact between waveguide core in glass substrate, therefore outer stops
Layer does not influence the forming process of optical waveguide.
The invention is realized in this way a method of glass based optical waveguide chip uniformity is improved, the method includes
Following steps：
S1, in ready glass substrate make optical waveguide formed it is mask used；
S2, the glass substrate for forming optical waveguide exposure mask is carried out to ion exchange formation surface optical waveguide；
S3, the mask used of etching process removal optical waveguide formation is utilized；
S4, external barrier layer is made in glass substrate surface by micrometer-nanometer processing technology；
S5, the glass substrate of external barrier layer forms buried type ion doping using electric-field-assisted ion migrating technology production
Area；
S6, optical waveguide is formed using micrometer-nanometer processing technology removal external barrier layer.
A further technical scheme of the invention is that：It is further comprising the steps of in the step S1：
S11, film is made in glass substrate surface using evaporation or sputter-deposition technology；
S12, gone out using photoetching and corrosion or lithography ion exchange window formed optical waveguide formed it is mask used.
A further technical scheme of the invention is that：The glass substrate for forming exposure mask with optical waveguide is existed in the step S2
Carry out ion exchange in fused salt containing Doped ions, between 230 ~ 400 DEG C of ion-exchange temperature, ion-exchange time 5 minutes
To between 4 hours.
A further technical scheme of the invention is that：Include the following steps in the step S4：
S41, film is made on the surface of glass substrate (1) using evaporation or sputter-deposition technology；
S42, by photoetching and corrosion or etching to film carry out processing form external barrier layer.
A further technical scheme of the invention is that：When the optical waveguide is bar shaped, external barrier layer is located at glass substrate surface
Ion doped region two sides, glass substrate surface ion doped region near zone formed window.
A further technical scheme of the invention is that：Using the fused salt without Doped ions as electrode in the step S5.
A further technical scheme of the invention is that：The fusion temperature of the fused salt is between 280 ~ 400 DEG C, in glass substrate
(1) two sides apply Dc bias, carry out electric-field-assisted ion migration.
The beneficial effects of the invention are as follows：During carrying out electric-field-assisted ion migration production buried light waveguide, due to
In glass substrate on the superficial layer of " white space " high resistivity external barrier layer presence, increase in glass substrate " blank area
The resistance in domain ", it is suppressed that the temperature rise amplitude of glass substrate improves the uniformity of glass substrate optical waveguide burying depth.
Detailed description of the invention
Fig. 1 is the schematic diagram of ion-exchange production surface strip optical waveguide.
Fig. 2 is the schematic diagram of electric-field-assisted ion migration production buried light waveguide.
Fig. 3 is the flow chart of production glass based optical waveguide provided in an embodiment of the present invention.
Fig. 4 is glass substrate surface external barrier layer provided in an embodiment of the present invention position and waveguide relation schematic diagram.
Fig. 5 is that assisting ion migration in field provided in an embodiment of the present invention is buried in the glass surface production with external barrier layer
The schematic diagram of formula strip optical waveguide.
Fig. 6 is the glass base buried type strip optical waveguide schematic diagram provided in an embodiment of the present invention for making and finishing.
Specific embodiment
Appended drawing reference：1- glass substrate；2- optical waveguide forms mask used；3- contains the fused salt of Doped ions；4- glass
The ion doped region on surface；5- is free of the fused salt of Doped ions；6- contact conductor；7- buried type ion doped region；Stop outside 8-
Layer.
As shown in figures 1 to 6, the method provided by the invention for improving glass based optical waveguide chip uniformity, details are as follows：
Step S1, production optical waveguide is formed mask used in ready glass substrate；Prepare glass substrate 1, makes light wave
It leads to form mask used 2, film is made on the surface of glass substrate (1) using the deposition techniques such as evaporation or sputtering, with a thickness of micro-
The metal materials such as Al, Cr-Au of rice or systems perhaps the dielectric substances such as SiO2 using photoetching and corrosion or
Lithographic method processes ion exchange window, forms optical waveguide and forms mask used 2.
The glass substrate for forming optical waveguide exposure mask is carried out ion exchange and forms surface optical waveguide by step S2；Light will be had
The glass substrate 1 that waveguide forms mask used 2 is put into 3 progress ion exchange in the fused salt containing Doped ions, as shown in Figure 1,
Between 230 ~ 400 DEG C of ion-exchange temperature, ion-exchange time is determined according to design requirement, between 5 minutes to 4 hours；It is molten
Doped ions in salt act in glass substrate 1 ion doped region 4 for forming glass surface through thermal diffusion, as surface light wave
The core led.
Step S3 is formed mask used using etching process removal optical waveguide；Removal optical waveguide forms mask used 2.
Using chemical etching technology, removes optical waveguide and form mask used 2.
Step S4 makes external barrier layer in glass substrate surface by micrometer-nanometer processing technology；It makes external barrier layer and makes institute
With exposure mask 8, film is made on the surface of glass substrate 1 using the deposition techniques such as evaporation or sputtering, with a thickness of systems
Al or SiO2Equal dielectric substances, and film is processed using photoetching and corrosion or lithographic method, form extrernal resistance
Barrier 8.Production to strip optical waveguide, external barrier layer 8 is located at 4 two sides of ion doped region of glass surface, in glass surface
4 near zone of ion doped region formed window, as shown in Figure 4.The determination of window width lower limit is according to following two condition：Its
One, external barrier layer 8 is not contacted with the ion doped region 4 of glass surface；Second, guaranteeing to be formed in external barrier layer 8 and step S5
Buried type ion doped region 7 do not contact.
Step S5, to production have the glass substrate of external barrier layer using electric-field-assisted ion migrating technology formed buried type from
Sub- doped region；Buried type ion doped region 7 is formed using electric-field-assisted ion migrating technology.By the light wave on 1 surface of glass substrate
It leads to form mask used 2 removal, electrode is used as using the fused salt 5 without Doped ions.Fused salt is heated and is melted, 280 ~ 400
Between DEG C, apply Dc bias, the contact conductor of 4 side of ion doped region of glass surface in the two sides of glass substrate 1
Positive electrode is connected, electric-field-assisted ion migration is carried out, as shown in figure 5, under the action of Dc bias, first time ion exchange shape
At the ion doped region 4 of glass surface be pushed into glass substrate 1, form buried type ion doped region 7, diffusion time is according to institute
Burying depth is needed to determine.
Step S6 forms optical waveguide using micrometer-nanometer processing technology removal external barrier layer.External barrier layer 8 removes.Using fine
Processing technology removes external barrier layer 8, and optical waveguide completes, optical waveguide section, as shown in Figure 6.
1 material therefor of glass substrate is silicate glass, phosphate glass or borate glass.
Doped ions contained by fused salt 3 containing Doped ions are：Tl+、Ag+And Cs+。
By " white space " of 4 side of ion doped region of glass surface in glass substrate 1（There is no the area of optical waveguide
Domain）Surface on add the inert external barrier layer of production.External barrier layer and the glass surface in forming process, and after formation
Ion doped region 4 does not contact；Buried type ion doped region 7 in forming process, and after formation does not also contact.
The inert external barrier layer material will not be electrolysed generation monovalent cation under electric field action.
1 material of glass substrate is silicate glass, borosilicate glass, phosphate glass or borate glass.
Doped ions in the ion doped region 4 and buried type ion doped region 7 of the glass surface are Ag+, Tl+Or
Person Cs+。
Embodiment 1
Make buried type monomode optical waveguide（8-10 microns of core diameter）.
S1 prepares the glass substrate 1 of twin polishing.It is 80 ~ 200nm's in surface evaporation a layer thickness of glass substrate 1
Al film produces the bar shaped ion exchange window that width is 3-5 μm, shape by photoetching and wet corrosion technique on Al film
Mask used 2 are formed at optical waveguide.
The glass substrate (1) for forming mask used (2) with optical waveguide is put into NaNO by S23、Ca(NO3)2And AgNO3's
Fused salt mixt（NaNO3、Ca(NO3)2And AgNO3The molar ratio of three kinds of ingredients is 50:50:1）Middle carry out ion exchange, ion are handed over
260-350 DEG C of temperature is changed, ion-exchange time is 10-30 minutes, the Ag in fused salt+It is acted in glass substrate 1 through thermal diffusion
Form the ion doped region 4 of glass surface.
The optical waveguide on 1 surface of glass substrate is formed mask used 2 and is removed using caustic solution by S3.
S4 evaporates the Al that a layer thickness is 80 ~ 200nm in the upper surface of the glass substrate 1 of silicate material production, passes through
It with the ion doped region 4 of glass surface is that width is 15-18 on central axes in photoetching and wet corrosion technique removal glass substrate 1
μm film, the Al film that does not remove forms external barrier layer 8, and in the ion doped region of glass surface, 4 near zone forms electric field
The window of assisting ion migration.
S5, using NaNO3With Ca (NO3)2Fused salt mixt（NaNO3With Ca (NO3)2 The molar ratio of two kinds of ingredients is 50:
50）As electrode, fused salt is heated and is melted, applied Dc bias in the two sides of glass substrate 1, have waveguide in glass substrate 1
Side applies positive voltage, carries out electric-field-assisted ion migration.240-280 DEG C of temperature of high temperature furnace is kept, transit time 2-5 is small
When.
S6 removes the external barrier layer 8 on 1 surface of glass substrate using caustic solution.
Buried type monomode optical waveguide production finishes.
Embodiment 2
Make buried type multimode lightguide（45-50 microns of core diameter）.
S1 prepares the glass substrate 1 of twin polishing.It is 80 ~ 200nm in surface evaporation a layer thickness of glass substrate (1)
Al film, it is 5-20 μm of bar shaped ion exchange window that width is produced on Al film by photoetching and wet corrosion technique
Mouthful, it forms optical waveguide and forms mask used 2；
S2 will form mask used with optical waveguide, and 2 glass substrate 1 is put into NaNO3、Ca(NO3)2And AgNO3Mixing it is molten
Salt（NaNO3、Ca(NO3)2And AgNO3The molar ratio of three kinds of ingredients is 50:50:2）Middle carry out ion exchange, ion-exchange temperature
260-350 DEG C, ion-exchange time is 15-90 minutes, the Ag in fused salt+It is acted in glass substrate 1 through thermal diffusion and forms glass
The ion doped region 4 on glass surface.
The optical waveguide on 1 surface of glass substrate is formed mask used 2 and is removed using caustic solution by S3；
S4 evaporates the Al that a layer thickness is 80 ~ 200nm in the upper surface of the glass substrate 1 of silicate material production, passes through photoetching
With with the ion doped region 4 of glass surface be that width is 70-100 μm on central axes in wet corrosion technique removal glass substrate 1
Film, the Al film that does not remove forms external barrier layer 8, and in the ion doped region of glass surface, it is auxiliary to form electric field for 4 near zone
Help the window of Ion transfer.
S5, using NaNO3With Ca (NO3)2Fused salt mixt（NaNO3With Ca (NO3)2The molar ratio of two kinds of ingredients is 50:
50）As electrode, fused salt is heated and is melted, applied Dc bias in the two sides of glass substrate 1, have waveguide in glass substrate 1
Side applies positive voltage, carries out electric-field-assisted ion migration.240-280 DEG C of temperature of high temperature furnace is kept, transit time 4-48 is small
When.
S6 removes the external barrier layer 8 on 1 surface of glass substrate using caustic solution.
The production of buried type multimode lightguide finishes.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (7)
1. a kind of method for improving glass based optical waveguide chip uniformity, which is characterized in that the described method comprises the following steps：
S1, in ready glass substrate make optical waveguide formed it is mask used；
S2, the glass substrate for forming optical waveguide exposure mask is carried out to ion exchange formation surface optical waveguide；
S3, the mask used of etching process removal optical waveguide formation is utilized；
S4, external barrier layer is made in glass substrate surface by micrometer-nanometer processing technology；
S5, the glass substrate of external barrier layer forms buried type ion doping using electric-field-assisted ion migrating technology production
Area；
S6, optical waveguide is formed using micrometer-nanometer processing technology removal external barrier layer.
2. the method according to claim 1, wherein further comprising the steps of in the step S1：
S11, film is made in glass substrate surface using evaporation or sputter-deposition technology；
S12, gone out using photoetching and corrosion or lithography ion exchange window formed optical waveguide formed it is mask used.
3. according to the method described in claim 2, it is characterized in that, the glass of exposure mask will be formed in the step S2 with optical waveguide
Glass substrate carries out ion exchange in the fused salt containing Doped ions, between 230 ~ 400 DEG C of ion-exchange temperature, when ion exchange
Between between 5 minutes to 4 hours.
4. according to the method described in claim 3, it is characterized in that, including the following steps in the step S4：
S41, film is made on the surface of glass substrate (1) using evaporation or sputter-deposition technology；
S42, by photoetching and corrosion or etching to film carry out processing form external barrier layer.
5. according to the method described in claim 4, it is characterized in that, external barrier layer is located at glass when the optical waveguide is bar shaped
The ion doped region two sides of substrate surface form window in the ion doped region near zone of glass substrate surface.
6. according to the method described in claim 5, it is characterized in that, being made in the step S5 using the fused salt without Doped ions
For electrode.
7. according to the method described in claim 6, it is characterized in that, the fusion temperature of the fused salt between 280 ~ 400 DEG C,
The two sides of glass substrate (1) apply Dc bias, carry out electric-field-assisted ion migration.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109491011A (en) * | 2018-12-17 | 2019-03-19 | 武汉邮电科学研究院有限公司 | A kind of implementation method, waveguide and the optical device of Waveguide active gain |
| CN111025471A (en) * | 2019-12-30 | 2020-04-17 | 浙江大学绍兴微电子研究中心 | Voltage-segmented glass-based buried optical waveguide continuous production method |
| CN111045150A (en) * | 2019-12-30 | 2020-04-21 | 浙江大学 | Method for realizing continuous production of glass-based ion exchange surface optical waveguide chip |
| CN111208607A (en) * | 2020-02-09 | 2020-05-29 | 浙江大学深圳研究院 | Method for manufacturing glass-based spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN111208608A (en) * | 2020-02-08 | 2020-05-29 | 浙江大学深圳研究院 | Manufacturing method of ion exchange glass-based buried waveguide mode spot converter |
| CN111239898A (en) * | 2020-02-09 | 2020-06-05 | 浙江大学深圳研究院 | Method for manufacturing glass-based buried type spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN111239894A (en) * | 2020-02-07 | 2020-06-05 | 浙江大学深圳研究院 | Method for continuously manufacturing buried optical waveguide by using voltage-segmented electric field to assist ion migration |
| CN113391396A (en) * | 2021-06-08 | 2021-09-14 | 浙江大学绍兴微电子研究中心 | Method for improving symmetry of glass-based optical waveguide core by adopting inner barrier layer |
| CN113391397A (en) * | 2021-06-08 | 2021-09-14 | 浙江大学绍兴微电子研究中心 | Method for improving symmetry of glass-based optical waveguide core by adopting external barrier layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1844963A (en) * | 2006-05-08 | 2006-10-11 | 浙江南方通信集团股份有限公司 | Method for preparing glass waveguide by single-side molten salt electric field assistant ion exchange |
| CN102193146A (en) * | 2011-05-26 | 2011-09-21 | 浙江大学 | Method for manufacturing glass substrate all buried strip-type optical waveguide stack |
| CN106291814A (en) * | 2015-05-12 | 2017-01-04 | 中兴通讯股份有限公司 | A kind of fiber waveguide manufacture method and fiber waveguide |
| CN106291816A (en) * | 2015-05-12 | 2017-01-04 | 中兴通讯股份有限公司 | A kind of method improving glass based optical waveguide chip uniformity |
-
2018
- 2018-06-15 CN CN201810621236.5A patent/CN108828718A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1844963A (en) * | 2006-05-08 | 2006-10-11 | 浙江南方通信集团股份有限公司 | Method for preparing glass waveguide by single-side molten salt electric field assistant ion exchange |
| CN102193146A (en) * | 2011-05-26 | 2011-09-21 | 浙江大学 | Method for manufacturing glass substrate all buried strip-type optical waveguide stack |
| CN106291814A (en) * | 2015-05-12 | 2017-01-04 | 中兴通讯股份有限公司 | A kind of fiber waveguide manufacture method and fiber waveguide |
| CN106291816A (en) * | 2015-05-12 | 2017-01-04 | 中兴通讯股份有限公司 | A kind of method improving glass based optical waveguide chip uniformity |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109491011A (en) * | 2018-12-17 | 2019-03-19 | 武汉邮电科学研究院有限公司 | A kind of implementation method, waveguide and the optical device of Waveguide active gain |
| CN111025471A (en) * | 2019-12-30 | 2020-04-17 | 浙江大学绍兴微电子研究中心 | Voltage-segmented glass-based buried optical waveguide continuous production method |
| CN111045150A (en) * | 2019-12-30 | 2020-04-21 | 浙江大学 | Method for realizing continuous production of glass-based ion exchange surface optical waveguide chip |
| CN111025471B (en) * | 2019-12-30 | 2021-04-13 | 浙江大学绍兴微电子研究中心 | Voltage-segmented glass-based buried optical waveguide continuous production method |
| CN111045150B (en) * | 2019-12-30 | 2021-04-20 | 浙江大学 | Method for realizing continuous production of glass-based ion exchange surface optical waveguide chip |
| CN111239894A (en) * | 2020-02-07 | 2020-06-05 | 浙江大学深圳研究院 | Method for continuously manufacturing buried optical waveguide by using voltage-segmented electric field to assist ion migration |
| CN111208608A (en) * | 2020-02-08 | 2020-05-29 | 浙江大学深圳研究院 | Manufacturing method of ion exchange glass-based buried waveguide mode spot converter |
| CN111208607A (en) * | 2020-02-09 | 2020-05-29 | 浙江大学深圳研究院 | Method for manufacturing glass-based spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN111239898A (en) * | 2020-02-09 | 2020-06-05 | 浙江大学深圳研究院 | Method for manufacturing glass-based buried type spot-size converter by grooved hot plate temperature gradient ion diffusion |
| CN113391396A (en) * | 2021-06-08 | 2021-09-14 | 浙江大学绍兴微电子研究中心 | Method for improving symmetry of glass-based optical waveguide core by adopting inner barrier layer |
| CN113391397A (en) * | 2021-06-08 | 2021-09-14 | 浙江大学绍兴微电子研究中心 | Method for improving symmetry of glass-based optical waveguide core by adopting external barrier layer |
| CN113391396B (en) * | 2021-06-08 | 2023-09-19 | 浙江大学绍兴微电子研究中心 | Method for improving core symmetry of glass-based optical waveguide by adopting inner barrier layer |
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Application publication date: 20181116 |