CN108809056B - A kind of three-dimensionally integrated intelligent power module and its manufacturing method - Google Patents
A kind of three-dimensionally integrated intelligent power module and its manufacturing method Download PDFInfo
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- CN108809056B CN108809056B CN201810623288.6A CN201810623288A CN108809056B CN 108809056 B CN108809056 B CN 108809056B CN 201810623288 A CN201810623288 A CN 201810623288A CN 108809056 B CN108809056 B CN 108809056B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 238000012544 monitoring process Methods 0.000 claims abstract description 21
- 238000004891 communication Methods 0.000 claims description 11
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000005501 phase interface Effects 0.000 claims description 4
- 239000007767 bonding agent Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of three-dimensionally integrated intelligent power module and its manufacturing methods; including power switch circuit and driving circuit; and main control circuit, condition monitoring and the protection circuit being connected with power switch circuit and its driving circuit; main control circuit is assembled into top substrate layer; condition monitoring and protection Circuit assembly are to underlying substrate; the intelligent control unit that top substrate layer and underlying substrate are interconnected and form three-dimensional structure by leading directly to guide hole; power switch circuit and its driving circuit are welded to high thermal conductive substrate, are welded by lead and are connect with intelligent control unit.Intelligent power module disclosed by the invention; it is integrated with power switch circuit and its driving circuit, main control circuit, condition monitoring and protection circuit; using three-dimensionally integrated form; module power density can be improved, reduce device volume; shorten the conductor length between power semiconductor pin; parasitic parameter and noise spike voltage are reduced, the application reliability of power device is improved.
Description
Technical field
The invention belongs to electronic technology field, relate more specifically to a kind of intelligent power module and its manufacturing method.
Background technique
Intelligent power control module is by System-in-Package technology, by device for power switching, switch driving circuit, main control
In circuit and protection circuit integration a to packaging body, it is responsible for carrying out the data of acquisition or control input by main control circuit
It manages, realizes various control algolithms, control signal is sent to power circuit by output interface and exports operation result to periphery
Equipment receives instruction from peripheral equipment and executes corresponding operation.When this integration module simplifies reply different function environment
Device setting, have compact-sized, powerful, configuration flexibly and the significant advantages such as be easily installed.Current intelligent power
Inside modules generally only integrated drive electronics and simply protection circuit, exist and protect circuit incomplete, need in addition to configure
Processor increases the complexity of modular manufacture to realize intelligent control algorithm, leads to that user's design cycle is longer, production cost
It is higher.Existing intelligent power module mainly uses plane assembling mode, and module volume is larger, and power density is lower, interconnection line away from
From longer, parasitic parameter is big, increases the electromagnetic interference of module.
Summary of the invention
In view of the foregoing, the present invention provides a kind of three-dimensionally integrated intelligent power module and its manufacturing method, inside collection
Success rate switch, intelligent control circuit, Acquisition Circuit and protection circuit are, it can be achieved that sensorless strategy, PFC etc.
Intelligent motor control algolithm;And using the three-dimensionally integrated skill of high-power circuit and digital control circuit based on substrate joining
Art reduces EMI interference, reduces module volume, optimization signal transmission quality.
To achieve the above object, the present invention uses following technological means:
A kind of three-dimensionally integrated intelligent power module, including power switch circuit and intelligent control circuit, power switch circuit
Connect intelligent control circuit;
Intelligent control circuit includes main control circuit, driving circuit, external interface, status monitor circuit and protects circuit,
External interface connects main control circuit, and main control circuit is separately connected driving circuit, protection circuit, status monitor circuit, protection
Circuit connection driving circuit;
The main control circuit is provided for receiving the rotor position information of external motor for power switch driver circuit
Working control signal monitors the job information of power switch circuit, is also used to communicate with the master control system of user;
The driving circuit, is connected with power switch circuit, for the grid charge and discharge for the power switch circuit, makes
Obtain power switch on and off;
The protection circuit, is connected with power switch circuit, for for the power switch circuit provide over-voltage, overcurrent,
Overheat protector;
The status monitor circuit, for monitoring the junction temperature, busbar voltage, operating current information of power switch circuit, and
Feed back to the main control circuit.
The external interface includes main control circuit program download interface, intelligent power module power interface, main control electricity
The phase interface of road communication interface and motor, main control circuit program download interface, intelligent power module power interface, main control
The phase interface of circuit communication interface and motor is connect with main control circuit.
The protection circuit is power switch circuit, is also used to feed back exception information, main control circuit to main control circuit
The exception information of recording power switching circuit, and the exception information of power switch circuit is supplied to the master control system of user.
The power switch circuit includes device for power switching, and device for power switching is made of six power MOS pipes.
Further include multiple function substrates for assembling chip, function substrate and element form level Hermetic Package:
Power switch and its driving circuit pass through bonding and are assembled into high thermal conductive substrate, form power cell;
Condition monitoring and protection circuit pass through bonding and are assembled into underlying substrate, form monitoring protection location;
Main control circuit is assembled into top substrate layer by being bonded with external interface, forms control communication unit;
It monitors protection location and controls the intelligent control that communication unit forms three-dimensional structure by leading directly to guide hole perpendicular interconnection
Unit;
Intelligent control unit and power cell are weldingly connected by lead.
The manufacturing method of three-dimensionally integrated intelligent power module, comprising the following steps:
Manufacture is used for top substrate layer, underlying substrate and the high thermal conductive substrate of assembling chip;Wherein, top substrate layer is opened for inside
There is the low-temperature co-fired ceramic substrate of cavity, drawn interconnection port by internal wiring and clear opening, in bottom production palladium-silver weldering
Disk;Underlying substrate is ltcc substrate, is connected with top substrate layer position production palladium-silver pad in underlying substrate;High thermal conductive substrate is
Ceramic DBC substrate;
Condition monitoring and protection circuit chip are welded on underlying substrate, filter capacitor is welded in top substrate layer,
Underlying substrate and high thermal conductive substrate are welded on shell simultaneously;
Condition monitoring and protection circuit chip are bonded on underlying substrate;
Printing Paste on palladium-silver pad in top substrate layer and underlying substrate carries out Reflow Soldering after alignment;By power switch
Circuit and its drive circuit chip are welded on high thermal conductive substrate;Cleaning module after welding;
With bonding agent by main control circuit die bonding to top substrate layer, wire bonding is then completed by bonding wire;
Power switch circuit and its drive circuit chip are bonded on high thermal conductive substrate.
Top substrate layer 2~8mm of cavity depth, side 3~8mm of width.
Compared with prior art, the invention has the following advantages that
Intelligent power module, master controller acquisition driving circuit, protection circuit and the temperature sensing provided according to the present invention
After the information that device provides, fed back by external interface to the master control system of user.It is internally integrated power switch, intelligent control
Circuit, Acquisition Circuit and protection circuit are, it can be achieved that the intelligent motors control algolithm such as sensorless strategy, PFC;And
And using the three-dimensional integration technology of high-power circuit and digital control circuit based on substrate joining, EMI interference is reduced, is reduced
Module volume, optimization signal transmission quality.The control system of user only needs to carry out data with the master controller of inside modules logical
Letter, can obtain the job information and fault message of power switch circuit, can provide convenience for the design of user's total system.
The manufacturing method of the present invention is simple, convenient, the intelligent power module manufactured be integrated with power switch circuit and
It is close that modular power can be improved using three-dimensionally integrated form in its driving circuit, main control circuit, condition monitoring and protection circuit
Degree reduces device volume, shortens the conductor length between power semiconductor pin, reduces parasitic parameter and noise point
Peak voltage improves the application reliability of power device.
Detailed description of the invention
In order to illustrate more clearly of the embodiment of the present invention, simple Jie will be to attached drawing required for embodiment below
It continues, it should be apparent that, drawings discussed below is only some embodiments of the present invention, and those of ordinary skill in the art are come
It says, without creative efforts, can also be obtained according to these attached drawings other accompanying drawings.
Fig. 1 is the circuit function block diagram of intelligent power module provided by the invention;
Fig. 2 is the circuit theory schematic diagram of intelligent power module provided by the invention;
Fig. 3 is the three-dimension packaging structural schematic diagram of intelligent power module provided by the invention.
In figure, 301 be main control circuit chip;302 be bonding wire;303 be bonding agent;304 be high temperature soldering paste;305 are
Condition monitoring and protection circuit chip;306 be soldering paste;307 be bonding wire;308 be top substrate layer;309 be underlying substrate;310
To control signal lead leg;311 be metal shell;312 be through-hole interconnection;313 be power lead leg;314 be down-lead bracket;315 are
High thermal conductive substrate;316 be power switch circuit and its drive circuit chip;317 be bonding line;318 be capacitor.
Specific embodiment
Below in conjunction with the attached drawing specific embodiment that the present invention will be described in detail.It is described to be explanation of the invention rather than limit
It is fixed.
Fig. 1 is the circuit function block diagram of intelligent power module provided in an embodiment of the present invention.As shown in Figure 1, the present invention mentions
The intelligent power module of confession includes device for power switching and intelligent control circuit, and device for power switching connects intelligent control circuit.
Intelligent control circuit includes main control circuit, driving circuit, external interface, status monitor circuit and protection circuit, external interface
Main control circuit is connected, main control circuit is separately connected driving circuit, protection circuit, status monitor circuit, protects circuit connection
Driving circuit.
Fig. 2 is the circuit theory schematic diagram of intelligent power module provided in an embodiment of the present invention.As shown in Fig. 2, of the invention
The intelligent power module that embodiment provides includes intelligent control circuit and device for power switching, and the intelligent control circuit includes master
Control circuit, driving circuit, external interface, status monitor circuit and protection circuit.
The main control circuit receives rotor position information, the velocity information of external motor, acquires current information, generates
Electronics commutation signal provides working signal for driving circuit, and receives to protect the power switch circuit abnormal signal of electronic feedback,
It is also used to communicate with the master control system of user;
The external interface includes that communication interface, program download interface, motor hall signal interface, analog input connect
Mouth, power supply translation interface;
The driving circuit, is connected with power switch circuit, for the grid charge and discharge for the power switch circuit, makes
Obtain power switch on and off;
The status monitor circuit is monitored by voltage sample, current sample monitors, temperature sampling monitoring circuit forms, and is used for
The junction temperature, busbar voltage, operating current information of the power switch circuit are monitored, and feeds back to the main control circuit;
The protection circuit is patrolled according to the junction temperature of the power switch circuit, busbar voltage, operating current information and protection
Volume, control driving circuit is enabled or closes, for providing over-voltage, overcurrent, overheat protector for the power switch circuit;
Fig. 3 is the three-dimension packaging structural schematic diagram of intelligent power module provided by the invention.Intelligence disclosed in the present embodiment
Power module discloses the optimal installation site of each power device, improves the integral heat sink of module, and the heat for improving module is steady
It is qualitative.Power switch and its driving circuit pass through bonding and are assembled into high thermal conductive substrate, form power cell;Condition monitoring and protection
Circuit is assembled into underlying substrate by bonding, forms monitoring protection location;Main control circuit is with external interface by being bonded assembling
To top substrate layer, control communication unit is formed;Protection location and control communication unit are monitored by leading directly to guide hole perpendicular interconnection shape
At the intelligent control unit of three-dimensional structure;Intelligent control unit and power cell are weldingly connected by lead.
It will be described below the processing step of the manufacturing method of the intelligent power module by the embodiment of the present invention:
As shown in figure 3, manufacture is used for the top substrate layer 308 of assembling chip, underlying substrate 309, high thermal conductive substrate 315.Its
Substrate 308 is low-temperature co-fired ceramic substrate (the Low Temperature Cofired that inside is provided with cavity at the middle and upper levels
Ceramic, LTCC), 2~8mm of cavity depth, side 3~8mm of width, by internal wiring and clear opening 312 by interconnection port
It draws, makes palladium-silver pad in bottom;Underlying substrate 309 is ltcc substrate, is connected in underlying substrate 309 with top substrate layer 308
Connect position production palladium-silver pad;High thermal conductive substrate 315 is ceramics DBC substrate.
Condition monitoring and protection circuit chip 305 are welded on underlying substrate 309 using high temperature soldering paste 304, will be filtered
Capacitor 318 is welded in top substrate layer 308, while underlying substrate 309, high thermal conductive substrate 315 are welded to 10# outer steel shell 311
On, welding temperature is 210 DEG C~215 DEG C;
Condition monitoring and protection circuit chip 305 are bonded on underlying substrate 309;
Low temperature soldering paste 306 is printed on palladium-silver pad in top substrate layer 308 and underlying substrate 309, is flowed back after alignment
Weldering;Power switch circuit and its low temperature soldering paste 306 of drive circuit chip 316 are welded on high thermal conductive substrate 315;After welding
Cleaning module.
Chip 301 is adhered in top substrate layer 308 with epoxy resin adhesive 303,150 DEG C~160 DEG C of baking temperature,
Then baking time 2h~4h completes wire bonding by bonding wire 302;
Power switch circuit and its drive circuit chip 316 are bonded on high thermal conductive substrate 315.
Various modifications and changes may be made in presently disclosed embodiment, this is for a person skilled in the art
It is obvious.Therefore, if these modifications and variations are fallen in the range of appended claims and its equivalent replacement, this hair
Bright disclosed embodiment is intended to cover these obvious modifications and variations.
Claims (6)
1. a kind of three-dimensionally integrated intelligent power module, which is characterized in that including power switch circuit and intelligent control circuit, power
Switching circuit connects intelligent control circuit;
Intelligent control circuit includes main control circuit, driving circuit, external interface, status monitor circuit and protects circuit, externally
Interface connects main control circuit, and main control circuit is separately connected driving circuit, protection circuit, status monitor circuit, protects circuit
Connect driving circuit;
The main control circuit provides work for receiving the rotor position information of external motor for power switch driver circuit
Signal is controlled, the job information of power switch circuit is monitored, is also used to communicate with the master control system of user;
The driving circuit, is connected with power switch circuit, for the grid charge and discharge for the power switch circuit, so that function
Rate switch conduction or closing;
The protection circuit, is connected with power switch circuit, for providing over-voltage, overcurrent, excess temperature for the power switch circuit
Protection;
The status monitor circuit for monitoring the junction temperature, busbar voltage, operating current information of power switch circuit, and is fed back
To the main control circuit;
Further include multiple function substrates for assembling chip, function substrate and element form level Hermetic Package:
Power switch and its driving circuit pass through bonding and are assembled into high thermal conductive substrate, form power cell;
Condition monitoring and protection circuit pass through bonding and are assembled into underlying substrate, form monitoring protection location;
Main control circuit is assembled into top substrate layer by being bonded with external interface, forms control communication unit;
It monitors protection location and controls the intelligent control unit that communication unit forms three-dimensional structure by leading directly to guide hole perpendicular interconnection;
Intelligent control unit and power cell are weldingly connected by lead;
Specifically, main control circuit is assembled into top substrate layer (308), and the condition monitoring and protection Circuit assembly are to underlying substrate
(309), the intelligent control unit that top substrate layer (308) and underlying substrate (309) are interconnected and form three-dimensional structure by leading directly to guide hole,
The power switch circuit and its driving circuit are welded to high thermal conductive substrate (315), are controlled by bonding line (317) welding with intelligence
Unit connection processed.
2. three-dimensionally integrated intelligent power module according to claim 1, which is characterized in that the external interface includes master control
Circuit program download interface processed, intelligent power module power interface, main control circuit communication interface and motor phase interface, it is main
Control circuit program download interface, intelligent power module power interface, main control circuit communication interface and motor phase interface
It is connect with main control circuit.
3. three-dimensionally integrated intelligent power module according to claim 1, which is characterized in that the protection circuit is opened for power
Powered-down road is also used to main control circuit feedback exception information, the exception information of main control circuit recording power switching circuit, and
The exception information of power switch circuit is supplied to the master control system of user.
4. three-dimensionally integrated intelligent power module according to claim 1, which is characterized in that the power switch circuit packet
Device for power switching is included, device for power switching is made of six power MOS pipes.
5. the manufacturing method of three-dimensionally integrated intelligent power module as described in claim 1, which is characterized in that including following step
It is rapid:
Manufacture is used for top substrate layer (308), underlying substrate (309) and the high thermal conductive substrate (315) of assembling chip;Wherein, upper layer
Substrate (308) is that inside is provided with the low-temperature co-fired ceramic substrate of cavity, by internal wiring and clear opening (312) by interconnection port
It draws, makes palladium-silver pad in bottom;Underlying substrate (309) is ltcc substrate, in underlying substrate (309) and top substrate layer
(308) be connected position production palladium-silver pad;High thermal conductive substrate (315) is ceramics DBC substrate;
Condition monitoring and protection circuit chip (305) are welded on underlying substrate (309), filter capacitor (318) is welded to
In top substrate layer (308), while underlying substrate (309) and high thermal conductive substrate (315) being welded on shell (311);
Condition monitoring and protection circuit chip (305) are bonded on underlying substrate (309);
Printing Paste on palladium-silver pad in top substrate layer (308) and underlying substrate (309) carries out Reflow Soldering after alignment;By function
Rate switching circuit and its drive circuit chip (316) are welded on high thermal conductive substrate (315);Cleaning module after welding;
Main control circuit chip (301) is adhered on top substrate layer (308) with bonding agent (303), then passes through bonding wire
(302) wire bonding is completed;
Power switch circuit and its drive circuit chip (316) are bonded on high thermal conductive substrate (315).
6. the manufacturing method of three-dimensionally integrated intelligent power module according to claim 5, which is characterized in that top substrate layer
(308) 2~8mm of cavity depth, side 3~8mm of width.
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CN109780690A (en) * | 2018-11-28 | 2019-05-21 | 珠海格力电器股份有限公司 | A kind of intelligent wireless power module, control method and transducer air conditioning |
CN110556370B (en) * | 2019-09-30 | 2024-03-29 | 桂林航天电子有限公司 | Micro-assembled solid power device |
CN112290772B (en) * | 2020-08-26 | 2022-03-04 | 北京卫星制造厂有限公司 | 3D integrated structure and assembly process of load point power module |
CN112787648A (en) * | 2020-12-29 | 2021-05-11 | 贵州天义电器有限责任公司 | Small-size lightweight solid power control device |
CN114666975A (en) * | 2022-03-15 | 2022-06-24 | 广东汇芯半导体有限公司 | Semiconductor circuit structure and manufacturing method thereof |
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CN101615842A (en) * | 2009-07-31 | 2009-12-30 | 东南大学 | Electric and electronic power unit module |
CN202068342U (en) * | 2011-03-07 | 2011-12-07 | 株洲南车时代电气股份有限公司 | Intelligent power device |
CN102761287A (en) * | 2011-04-28 | 2012-10-31 | 常州天曼智能科技有限公司 | Digital power module |
CN103595227A (en) * | 2013-11-20 | 2014-02-19 | 西安永电电气有限责任公司 | Intelligent power module |
CN104037147A (en) * | 2013-03-08 | 2014-09-10 | 富士电机株式会社 | Semiconductor device |
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US9431311B1 (en) * | 2015-02-19 | 2016-08-30 | Semiconductor Components Industries, Llc | Semiconductor package with elastic coupler and related methods |
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CN101615842A (en) * | 2009-07-31 | 2009-12-30 | 东南大学 | Electric and electronic power unit module |
CN202068342U (en) * | 2011-03-07 | 2011-12-07 | 株洲南车时代电气股份有限公司 | Intelligent power device |
CN102761287A (en) * | 2011-04-28 | 2012-10-31 | 常州天曼智能科技有限公司 | Digital power module |
CN104037147A (en) * | 2013-03-08 | 2014-09-10 | 富士电机株式会社 | Semiconductor device |
CN103595227A (en) * | 2013-11-20 | 2014-02-19 | 西安永电电气有限责任公司 | Intelligent power module |
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