CN108807630B - Semiconductor device based on graphical template and manufacturing method thereof - Google Patents
Semiconductor device based on graphical template and manufacturing method thereof Download PDFInfo
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- CN108807630B CN108807630B CN201710287383.9A CN201710287383A CN108807630B CN 108807630 B CN108807630 B CN 108807630B CN 201710287383 A CN201710287383 A CN 201710287383A CN 108807630 B CN108807630 B CN 108807630B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000605 extraction Methods 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The application discloses a semiconductor device based on a graphical template and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the following steps: s1, growing a template material on the substrate; s2, obtaining a patterned template with a micropillar array through etching; and s3, epitaxially growing an epitaxial structure on the patterned template. The method can obviously improve the external quantum efficiency of the deep ultraviolet LED.
Description
Technical Field
The application relates to a semiconductor device, in particular to a semiconductor device based on a graphical template and a manufacturing method thereof, which can improve the light extraction efficiency when being applied to devices such as deep ultraviolet LEDs and the like.
Background
AlGaN-based ultraviolet LEDs have been widely used in various fields, such as detection, medical treatment, communication, purification, disinfection, and the like. Compared with the traditional mercury light source, the nitride ultraviolet LED has the advantages of mercury-free environment protection, low working voltage, low power consumption, simplicity, portability, long service life and the like. However, the efficiency of the existing ultraviolet LED is relatively low, especially for the deep ultraviolet LED, the external quantum efficiency of the ultraviolet LED with the wavelength less than 360nm is mostly less than 10%, and a great promotion space is provided.
Deep ultraviolet LEDs have great utility, but at present their external quantum efficiency is low, mainly because: the dislocation density of the epitaxially grown AlGaN material is high, the polarization causes the Stark effect in a quantum well, the P-type doping efficiency of the AlGaN material with high Al component is low, the light extraction efficiency of the ultraviolet LED is low, and the like. The epitaxial AlGaN material has high dislocation density and low light extraction efficiency, and the improvement of the external quantum efficiency of the deep ultraviolet LED is limited to a great extent.
Disclosure of Invention
The invention aims to provide a semiconductor device based on a graphical template and a manufacturing method thereof, so as to overcome the defects in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
the embodiment of the application discloses semiconductor device based on graphical template, including graphical template and support epitaxial structure on graphical template, graphical template includes a plurality of micropillars that the array set up.
Preferably, in the above semiconductor device based on a patterned template, the cross section of the micropillars is circular, hexagonal, square or triangular.
Preferably, in the semiconductor device based on the patterned template, the maximum cross-sectional radius of each micro-column is 0.1 to 2 micrometers.
Preferably, in the semiconductor device based on the patterned template, the distance between adjacent micro-pillars is 0.1-2 microns.
Preferably, in the semiconductor device based on the patterned template, the thickness of the patterned template is 10-20 micrometers.
Preferably, in the above semiconductor device based on the patterned template, the patterned template is made of AlN, and the epitaxial structure includes an AlGaN layer.
Preferably, in the above semiconductor device based on the patterned template, the semiconductor device is a deep ultraviolet LED.
Correspondingly, the application also discloses a manufacturing method of the semiconductor device based on the graphical template, which comprises the following steps:
s1, growing a template material on the substrate;
s2, obtaining a patterned template with a micropillar array through etching;
and s3, epitaxially growing an epitaxial structure on the patterned template.
Preferably, in the above method for manufacturing a semiconductor device based on a patterned template, the substrate is sapphire.
Preferably, in the above method for fabricating a semiconductor device based on a patterned template, the template material is grown by HVPE.
Compared with the prior art, the invention has the advantages that:
according to the invention, a columnar graphical AlN template can be obtained by using a conventional etching process, and a deep ultraviolet LED device structure is extended on the graphical AlN template, so that on one hand, the lateral extension effect is achieved, and the crystal quality of epitaxial growth can be improved; on the other hand, the columnar graphical AlN can improve the light extraction efficiency of the deep ultraviolet LED; meanwhile, the device structure is patterned first and then the device structure is extended, and the method can avoid damage to the device structure and the electrode caused by a later patterning process. And finally, higher external quantum efficiency is obtained.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic cross-sectional view of a different embodiment of a patterned template according to the present invention;
fig. 2 is a schematic diagram illustrating a manufacturing process of a semiconductor device according to an embodiment of the present invention.
Detailed Description
The present invention will be more fully understood from the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which can be embodied in various forms. Therefore, specific functional details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously employ the present invention in virtually any appropriately detailed embodiment.
The semiconductor device based on the patterned template comprises the patterned template and an epitaxial structure supported on the patterned template, wherein the patterned template comprises a plurality of micro-pillars arranged in an array.
The micro-pillars have a certain gap therebetween, and in a preferred embodiment, a plurality of micro-pillars are arranged in parallel and the micro-pillars are substantially perpendicular to the surface of the epitaxial layer.
Referring to fig. 1, the cross-sectional shape of the microcolumn is preferably a regular pattern, and the cross-section of the microcolumn may be circular, hexagonal, square or triangular.
It is easy to think that the cross-sectional shape of the microcolumn may be other regular or irregular patterns.
In a preferred embodiment, the maximum cross-sectional radius r of each microcolumn is 0.1 to 2 micrometers. The distance d between the adjacent micro-columns is 0.1-2 microns.
The inventor can know through a large number of experiments that: when r and d are less than 0.1 micrometer or more than 2 micrometers, the extraction efficiency of deep ultraviolet light thereof may be significantly reduced. In a preferred embodiment, the thickness of the patterned template is 10-20 microns.
In the technical scheme, the height of the microcolumn is controlled to be 10-20 microns, so that the quality of the material can be obviously improved.
In a preferred embodiment, the patterned template is made of AlN and the epitaxial structure includes an AlGaN layer. The manufactured semiconductor device is a deep ultraviolet LED.
Referring to fig. 2, a method for manufacturing a deep ultraviolet LED device is described by taking the deep ultraviolet LED device as an example, and includes the steps of:
1. and growing high-quality AlN thin film material with the thickness of 10-20 microns on the sapphire substrate by HVPE.
2. The periodically arranged columnar patterned AlN template is obtained through an AlN etching process, the cross sections of the columnar AlN are respectively circular, hexagonal, square, triangular and the like, the radial distance r from the center to the edge of the cross section is 0.1-2 microns, and the distance d between the patterns is 0.1-2 microns.
3. And epitaxially growing a deep ultraviolet LED device structure on the graphical AlN template through MOCVD.
4. And carrying out standard LED chip manufacturing process flow on the wafer obtained by epitaxial growth.
5. And removing the sapphire substrate by methods such as laser lift-off and the like.
6. Scribing, packaging and testing.
According to the technical scheme, a film is firstly extended on a substrate, and then the micro-column array is obtained through etching. Compared with metal catalysis, the method can more accurately control the crystal quality, size, orientation, consistency, uniformity and the like of the micropillar array; meanwhile, a micro-column array with the cross section in any shape, such as a square, a hexagon, a triangle and the like, can be obtained.
Extending a deep ultraviolet LED device structure on the patterned AlN template: on one hand, the defect density and the release stress of the epitaxial layer can be effectively reduced through the lateral epitaxy technology, so that the crystal quality of epitaxial growth is improved, and the internal quantum efficiency is improved; on the other hand, when the deep ultraviolet LED is epitaxially grown on the planar AlN template, due to the high refractive index of the nitride, light emitted from the LED is totally reflected at the interface with air, so that a large portion of the light is confined in the LED, and the light extraction efficiency of the LED is reduced. And the interface formed by the columnar graphical AlN template and the air is not a plane any more, so that the total reflection is reduced to a great extent, and the light extraction efficiency of the deep ultraviolet LED can be well improved. The external quantum efficiency is thus significantly improved.
By the method, the obtained micro-column array can improve the epitaxial quality on one hand, and more importantly, can improve the light extraction efficiency of the deep ultraviolet LED, so that higher external quantum efficiency is obtained.
The aspects, embodiments, features and examples of the present invention should be considered as illustrative in all respects and not intended to be limiting of the invention, the scope of which is defined only by the claims. Other embodiments, modifications, and uses will be apparent to those skilled in the art without departing from the spirit and scope of the claimed invention.
The use of headings and sections in this application is not meant to limit the invention; each section may apply to any aspect, embodiment, or feature of the disclosure.
Throughout this application, where a composition is described as having, containing, or comprising specific components or where a process is described as having, containing, or comprising specific process steps, it is contemplated that the composition of the present teachings also consist essentially of, or consist of, the recited components, and the process of the present teachings also consist essentially of, or consist of, the recited process steps.
In this application, where an element or component is referred to as being included in and/or selected from a list of recited elements or components, it is understood that the element or component can be any one of the recited elements or components and can be selected from a group consisting of two or more of the recited elements or components. Moreover, it should be understood that elements and/or features of the compositions, apparatus, or methods described herein may be combined in various ways, whether explicitly described or implicitly described herein, without departing from the spirit and scope of the present teachings.
Unless specifically stated otherwise, use of the terms "comprising", "having", and "has" are generally to be construed as open-ended and not limiting.
The use of the singular herein includes the plural (and vice versa) unless specifically stated otherwise. Furthermore, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. In addition, where the term "about" is used before a quantity, the present teachings also include the particular quantity itself unless specifically stated otherwise.
It should be understood that the order of steps or the order in which particular actions are performed is not critical, so long as the teachings of the invention remain operable. Further, two or more steps or actions may be performed simultaneously.
It is to be understood that the figures and descriptions of the present invention have been simplified to illustrate elements that are relevant for a clear understanding of the present invention, while eliminating, for purposes of clarity, other elements. However, those skilled in the art will recognize that these and other elements may be desirable. However, because such elements are well known in the art, and because they do not facilitate a better understanding of the present invention, a discussion of such elements is not provided herein. It should be understood that the figures are presented for illustrative purposes and not as construction diagrams. The omission of details and modifications or alternative embodiments is within the scope of one skilled in the art.
It is to be understood that in certain aspects of the invention, a single component may be replaced by multiple components and that multiple components may be replaced by a single component to provide an element or structure or to perform a given function or functions. Except where such substitution would not operate to practice a particular embodiment of the invention, such substitution is considered within the scope of the invention.
While the invention has been described with reference to illustrative embodiments, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims. Moreover, unless specifically stated any use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another.
Claims (6)
1. A method for manufacturing a semiconductor device based on a patterned template is characterized in that the semiconductor device of the patterned template comprises the patterned template and an epitaxial structure supported on the patterned template, the patterned template comprises a plurality of micropillars arranged in an array,
the patterned template is made of AlN, the epitaxial structure comprises an AlGaN layer,
the semiconductor device is a deep ultraviolet LED,
the patterned template and air form a non-planar interface, the light extraction efficiency of the deep ultraviolet LED is improved by reducing total reflection,
the method for manufacturing the semiconductor device of the graphical template comprises the following steps:
s1, growing a template material on the substrate by HVPE mode;
s2, obtaining a patterned template with a micropillar array through etching;
s3, epitaxially growing an epitaxial structure on the patterned template;
s4, peeling off the substrate.
2. The method of claim 1, wherein: the substrate is sapphire.
3. The method of claim 1, wherein: the section of the micro-column is circular, hexagonal, square or triangular.
4. The method of claim 1, wherein: the maximum section radius of each micro-column is 0.1-2 microns.
5. The method of claim 1, wherein: the distance between the adjacent microcolumns is 0.1-2 microns.
6. The method of claim 1, wherein: the thickness of the patterned template is 10-20 micrometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710287383.9A CN108807630B (en) | 2017-04-27 | 2017-04-27 | Semiconductor device based on graphical template and manufacturing method thereof |
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| CN201710287383.9A CN108807630B (en) | 2017-04-27 | 2017-04-27 | Semiconductor device based on graphical template and manufacturing method thereof |
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| CN108807630A CN108807630A (en) | 2018-11-13 |
| CN108807630B true CN108807630B (en) | 2021-02-26 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723416A (en) * | 2012-07-05 | 2012-10-10 | 杭州士兰明芯科技有限公司 | LED epitaxial wafer and manufacturing method thereof |
| CN105659383A (en) * | 2013-10-21 | 2016-06-08 | 传感器电子技术股份有限公司 | Heterostructure including a composite semiconductor layer |
| CN106350783A (en) * | 2016-08-31 | 2017-01-25 | 北京大学 | Method for preparing low-dislocation-density AlGaN film based on MOCVD (metal organic chemical vapor deposition) lateral epitaxy and AlGaN film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4204163B2 (en) * | 2000-02-03 | 2009-01-07 | 株式会社リコー | Manufacturing method of semiconductor substrate |
| CN1294650C (en) * | 2004-08-19 | 2007-01-10 | 中国科学院物理研究所 | Method for preparing high quality GaN base material on specific saphire pattern substrate |
| CN102181824A (en) * | 2011-01-27 | 2011-09-14 | 广东银雨芯片半导体有限公司 | Process and structure of patterned substrate and light emitting diode chip |
| CN104465928A (en) * | 2014-12-10 | 2015-03-25 | 聚灿光电科技(苏州)有限公司 | LED epitaxial structure with hollowed-out structure and manufacturing method for LED epitaxial structure |
| CN105047775A (en) * | 2015-05-29 | 2015-11-11 | 华灿光电股份有限公司 | Ultraviolet light emitting diode epitaxial wafer and manufacturing method thereof |
| CN105489723B (en) * | 2016-01-15 | 2018-08-14 | 厦门市三安光电科技有限公司 | Nitride bottom and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723416A (en) * | 2012-07-05 | 2012-10-10 | 杭州士兰明芯科技有限公司 | LED epitaxial wafer and manufacturing method thereof |
| CN105659383A (en) * | 2013-10-21 | 2016-06-08 | 传感器电子技术股份有限公司 | Heterostructure including a composite semiconductor layer |
| CN106350783A (en) * | 2016-08-31 | 2017-01-25 | 北京大学 | Method for preparing low-dislocation-density AlGaN film based on MOCVD (metal organic chemical vapor deposition) lateral epitaxy and AlGaN film |
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