CN108807555A - A kind of schottky diode device - Google Patents
A kind of schottky diode device Download PDFInfo
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- CN108807555A CN108807555A CN201810899042.1A CN201810899042A CN108807555A CN 108807555 A CN108807555 A CN 108807555A CN 201810899042 A CN201810899042 A CN 201810899042A CN 108807555 A CN108807555 A CN 108807555A
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- Prior art keywords
- type semiconductor
- schottky diode
- semiconductor nano
- schottky
- wire
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- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 239000002070 nanowire Substances 0.000 claims abstract description 59
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 238000001465 metallisation Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 14
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 238000009826 distribution Methods 0.000 abstract description 7
- 230000008094 contradictory effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002071 nanotube Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
Abstract
A kind of Schottky diode belongs to semiconductor power technical field.The present invention includes the metallization cathode set gradually from bottom to top, N+ semiconductor substrates, N-type semiconductor nano-wire array, schottky metal and metallization anode, and compound inslation dielectric layer is filled between N-type semiconductor nano wire gap.Since the compound interface that the insulating medium layer of differing dielectric constant is formed can introduce peak electric field, and the dielectric constant of the insulating medium layer close to metallization anode side is higher, so surface field at schottky junction can be reduced effectively so that the field distribution inside semiconductor nanowires is more uniform.Thus it improves the breakdown voltage of device and can suitably increase the doping concentration of semiconductor nanowires to reduce conducting resistance, reduce conduction loss, so as to improve the breakdown voltage of Schottky diode and the contradictory relation of forward conduction voltage drop.
Description
Technical field
The invention belongs to power semiconductor technologies fields, and in particular to a kind of Schottky diode.
Background technology
Diode is widely used in each electronic product, is a kind of indispensable electronic component.Power diode
In it is most widely used include PN junction diode, Schottky diode (SBD), junction barrier diode (JBS) etc..Wherein, Xiao Te
Based diode is also known as Schottky-barrier diode, is grown up based on Semiconductor Physics Metals-semiconductor contacts theory
A kind of both ends semiconductor devices, between metal and semiconductor formed electrical nonlinearity contact, have lower cut-in voltage
And conduction voltage drop；Again because being monopole conduction, carrier-free storage effect, thus reverse recovery time is short, switching speed quickly,
It is widely used in various high frequencies, microwave, rectification, Switching Power Supply and high speed circuit.But the reversed leakage of Schottky diode
Electric current is larger, and temperature characterisitic is poor, and traditional planarized structure is easy to happen surface breakdown.Since Schottky diode is single
Pole device, there is also " the silicon limit " problems between breakdown voltage and forward conduction voltage drop, i.e., such as to improve two pole of Schottky
The breakdown voltage of pipe then needs the thickness for reducing its drift doping concentration, increasing drift region, this will necessarily cause conduction voltage drop
Increase and forward conduction loss increase.
Invention content
In view of described above, the present invention is for there are contradiction passes between the breakdown reverse voltage and forward conduction voltage drop of SBD
It is this technological deficiency, a kind of two pole of Schottky based on filled composite insulating medium layer between longitudinal nano-wire array is provided
It manages, compound inslation dielectric layer can introduce the peak electric field for reducing electric field at schottky junction in device body in the structure, realize
Its adjusting to nanowires body internal electric field so that nano wire can be completely depleted quickly, is further increasing breakdown reverse voltage
While also reduce forward conduction voltage drop.
To achieve the goals above, the present invention adopts the following technical scheme that：
A kind of Schottky diode, structure include the metallization cathode 1 set gradually from bottom to top, N+ semiconductor substrates
2, N-type semiconductor nano-wire array, schottky metal 5 and metallization anode 6, it is characterised in that：The N-type semiconductor nano wire
Array is made of mutual indepedent, non-touching N-type semiconductor nano wire 3；Filled with multiple between N-type semiconductor nano-wire array
Close insulating medium layer 4；The compound inslation dielectric layer 4 is passed from bottom to top according to dielectric constant by least two layers of insulating medium layer
The rule of increasing is stacked；The lower surface of the compound inslation dielectric layer 4 is in contact with N+ semiconductor substrates 2, and compound inslation is situated between
The upper surface of matter layer 4 and N-type semiconductor nano-wire array is in contact with schottky metal 5.
Further, the present invention in N-type semiconductor nano wire 3 a diameter of 10nm~1000nm.
Further, the present invention in N-type semiconductor nano wire 3 shape be cylinder, cube, hexagonal prisms or it is any can
The solid of realization.
Further, N-type semiconductor nano wire 3 arranges squarely, bar shaped, isosceles triangle, hexagon or any in the present invention
The array for the mode of can be achieved.
Further, the material of semiconductor nanowires 3 is silicon, germanium silicon (SiGe), silicon carbide (SiC), arsenic in the present invention
Gallium (GaAs), gallium nitride (GaN) or other any suitable semi-conducting materials.
Compared with prior art, the beneficial effects of the present invention are：
The present invention by the filled composite insulating medium layer between the gap of the semiconductor nanowires of Schottky diode, due to
Contact interface between the insulating medium layer of high low-k can introduce peak electric field, therefore compound exhausted by rationally adjusting
The position of contact interface in edge dielectric layer, and then the peak electric field for being minimized electric field at schottky junction is introduced in device body,
So that the field distribution inside semiconductor nanowires is more uniform.Thus, it is possible to improve the breakdown voltage of device and can fit by the present invention
When increase semiconductor nanowires doping concentration with reduce conducting resistance, reduce conduction loss, so as to improve Schottky diode
Contradictory relation of the breakdown voltage (BV) between forward conduction voltage drop.
Description of the drawings
Fig. 1 is a kind of cross-sectional view for Schottky diode that the embodiment of the present invention 1 provides.
Fig. 2 be the embodiment of the present invention 1 provide a kind of Schottky diode when adding backward voltage, nanowire edge AA '
The field distribution schematic diagram at place.
Fig. 3 is a kind of cross-sectional view for Schottky diode that the embodiment of the present invention 2 provides.
Fig. 4 is the 1st kind of arrangement mode schematic diagram of conductor nano tube/linear array in Schottky diode provided by the invention.
Fig. 5 is the 2nd kind of arrangement mode schematic diagram of conductor nano tube/linear array in Schottky diode provided by the invention.
Fig. 6 is the 3rd kind of arrangement mode schematic diagram of conductor nano tube/linear array in Schottky diode provided by the invention.
Fig. 7 to Figure 11 is that a kind of structure of the technological process manufacture for Schottky diode that the embodiment of the present invention 3 provides is shown
It is intended to.
In figure, 1 is metallization cathode, and 2 be N+ semiconductor substrates, and 3 be semiconductor nanowires, and 4 be compound inslation dielectric layer,
41 be the first insulating medium layer, and 42 be the second insulating medium layer, and 43 be third insulating medium layer, and 5 be schottky metal, and 6 be gold
Categoryization anode.
Specific implementation mode
In order to enable one of ordinary skill in the art can more understand the present invention program and principle, below in conjunction with the accompanying drawings and have
Body embodiment is described in detail.Present disclosure is not limited to any specific embodiment, and it is most preferred embodiment also not represent,
General replacement well-known to those skilled in the art is also encompassed within the scope of the invention.
Embodiment 1；
The present embodiment provides a kind of Schottky diodes, as shown in Figure 1, its structure includes the gold set gradually from bottom to top
Categoryization cathode 1, N+ semiconductor substrates 2, N-type semiconductor nano-wire array, schottky metal 5 and metallization anode 6, feature exists
In：The N-type semiconductor nano-wire array is made of mutual indepedent, non-touching N-type semiconductor nano wire 3, this implementation N-type
The diameter range of semiconductor nanowires 3 is 10nm~1000nm；Compound inslation Jie is provided between N-type semiconductor nano-wire array
Matter layer 4；The compound inslation dielectric layer 4 be stacked from bottom to top by the first insulating medium layer 41 and the second insulating medium layer 42 and
At the dielectric constant of first insulating medium layer 41 is less than the dielectric constant of second insulating medium layer 42；It is described compound
The lower surface of insulating medium layer 4 is in contact with N+ semiconductor substrates 2, compound inslation dielectric layer 4 and N-type semiconductor nano-wire array
Upper surface be in contact with schottky metal 5.
The operation principle of the present invention is described in detail with reference to embodiment 1：
When device forward conduction, the electric current of Schottky diode is flowed from metallization anode 6 through N-type semiconductor nano wire 3
To metallization cathode 1；When a reverse bias is applied, field distribution such as Fig. 2 institutes at the nanowire edge AA ' of Schottky diode
Show, the dotted line wherein in reference axis indicates that the field distribution of Conventional Schottky diodes, solid line are Schottky diode of the present invention
Field distribution.By the way that compound inslation dielectric layer 4 is arranged between N-type semiconductor nano wire 3 so that device is under reverse bias
Depletion layer in N-type semiconductor nano wire 3 is extended to 1 side of metallization cathode, the metallization anode 6 and gold of Schottky diode
Categoryization cathode 1 is separately positioned on the upper and lower surface contact of N-type semiconductor nano-wire array, is schottky junction at anode.Work as application
When voltage is sufficiently large, because of the radial dimension very little of nano wire, using the insulating dielectric materials of surrounding to electric field in semiconductor body
Adjustment effect, N-type semiconductor nano wire can be completely depleted quickly.Because the second insulation close to 6 side of metallization anode is situated between
42 dielectric constant of matter layer compares 41 higher of the first insulating medium layer, according to Gauss theorem it is found that close to 6 side of metallization anode
Electric field between N-type semiconductor nano wire and the second insulating medium layer 42 compares its lower with the first insulating medium layer 41, general
A peak electric field is introduced at two kinds of insulating medium layer contact interfaces, the peak electric field of introducing can make N-type semiconductor nano wire 3
Internal field distribution is more uniform, effectively reduces the surface field at schottky junction.Therefore N-type semiconductor nano wire 3 is mixed
Miscellaneous concentration can be increased suitably, and the breakdown reverse voltage of device is further increased while realizing compared with low forward conduction voltage drop.
Therefore a kind of nano wire Schottky diode with compound medium layer proposed by the present invention, improve the breakdown of Schottky diode
The contradictory relation of voltage and forward conduction voltage drop further decreases the conduction loss of device.
Embodiment 2：
The present embodiment compared to embodiment 1 difference lies in：Compound inslation dielectric layer includes the first insulating medium layer 41, second
Insulating medium layer 42, third insulating medium layer 43 ... wait multiple insulating medium layers, and the dielectric of multiple insulating medium layers is normal
Number is sequentially reduced from top to bottom, remaining structure is same as Example 1.
The present embodiment enables to the electric field point inside N-type semiconductor nano wire due to being provided with multiple insulating medium layers
Cloth is more uniform, further improves the contradictory relation of Schottky diode breakdown voltage and forward conduction voltage drop, reduces device
Conduction loss.
Fig. 4 to fig. 6 gives three kinds of Schottky diodes with different N-type semiconductor nanometer wire shapeds and arrangement mode
Three dimensional structure diagram schottky metal 5 and metallic electrode 6 are omitted in figure in order to protrude nano thread structure.Wherein,
N-type semiconductor nano wire 3 is cylindrical structure, the array that is square arrangement in Fig. 4；N-type semiconductor nano wire 3 is cylinder in Fig. 5
Body structure is arranged in " isosceles triangle " array；N-type semiconductor nano wire 3 is hexagonal prisms structure in Fig. 6, is in hexagonal array.
Embodiment 3：
The present invention provides the manufacturing process flow of silicon nanowires Schottky diode as described in Example 1, main techniques
Steps are as follows：
Step 1：Monocrystalline substrate prepares and semiconductor nanowires 3 are grown：
As shown in fig. 7, selecting N+ monocrystalline silicon as substrate material, N-type semiconductor nano wire 3 is defined using mask
Region locally exposes monocrystalline substrate surface, is then grown mutually solely in the region surface selective vapor extension (VPE)
Vertical, non-touching N-type semiconductor nano wire 3 is to form the conductor nano tube/linear array with certain arrangement；
Step 2：Deposit the first insulating medium layer 41：
As shown in figure 8, after forming 3 array of N-type semiconductor nano wire, based on CVD technology N-type semiconductor nano wire 3 it
Between gap in deposit the first insulating medium layer 41, then etch the first extra insulating medium layer 41 so that the first dielectric
The upper surface of layer 41 is arranged close to device anode side to ensure that the electric field spike introduced can be good at adjusting at schottky junction
Electric field；
Step 3：Deposit the second insulating medium layer 42：
As shown in figure 8, after completing the deposit of the first insulating medium layer 41 and etching, deposit second is continued absolutely based on CVD technology
Edge dielectric layer 42 is complete to fill head room clearance between N-type semiconductor nano wire 3, on the first insulating medium layer 41
At surface planarisation processing is carried out after deposit again；
Step 4：Deposit schottky metal 5：
As shown in Figure 10, in 42 surface deposition schottky metal 5 of the silicon of planarization and the second insulating medium layer, the Xiao Te
Base Metal is preferably the alloy of arbitrary several formation in the metals such as titanium, nickel, cobalt, chromium, platinum or above-mentioned metal；
Step 5：Form metallic electrode：
As shown in figure 11, deposited metal is distinguished in device front and the back side, respectively as the metal of Schottky diode
Change anode 6 and metallization cathode 1.
It should be strongly noted that Schottky diode making devices provided by the invention, it is also possible to silicon carbide, nitridation
The semi-conducting materials such as gallium, GaAs, indium phosphide or germanium silicon replace body silicon；The growth of N-type semiconductor nano wire 3 both can be used first outer
Prolong and the top-down preparation method such as etch again, the bottom-up preparation method such as self-assembled growth can also be used.
The embodiment of the present invention is elaborated above in association with attached drawing, but the invention is not limited in above-mentioned
Specific implementation mode, above-mentioned specific implementation mode is only schematical, rather than restrictive, the ordinary skill people of this field
Member under the inspiration of the present invention, can also make many in the case of not departing from present inventive concept and claimed range
Deformation, these belong to the protection of the present invention.
Claims (5)
1. a kind of Schottky diode, structure includes the metallization cathode (1) set gradually from bottom to top, N+ semiconductor substrates
(2), N-type semiconductor nano-wire array, schottky metal (5) and metallization anode (6), it is characterised in that：The N-type semiconductor
Nano-wire array is made of mutual indepedent, non-touching N-type semiconductor nano wire (3)；Between N-type semiconductor nano-wire array
Filled with compound inslation dielectric layer (4)；The compound inslation dielectric layer (4) is normal according to dielectric by least two layers of insulating medium layer
Rule incremental from bottom to top is counted to be stacked；The lower surface of the compound inslation dielectric layer (4) and N+ semiconductor substrates (2) phase
The upper surface of contact, compound inslation dielectric layer (4) and N-type semiconductor nano-wire array is in contact with schottky metal (5).
2. a kind of Schottky diode according to claim 1, which is characterized in that the N-type semiconductor nano wire (3)
A diameter of 10nm~1000nm.
3. a kind of Schottky diode according to claim 1, which is characterized in that the N-type semiconductor nano wire (3)
Shape includes cylinder, cube or hexagonal prisms.
4. a kind of Schottky diode according to claim 1, which is characterized in that N-type semiconductor nano wire (3) row
Row squarely, bar shaped, isosceles triangle or hexagonal array.
5. a kind of Schottky diode according to claim 1, which is characterized in that the material of the semiconductor nanowires (3)
Material includes silicon, germanium silicon, silicon carbide, GaAs or gallium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810899042.1A CN108807555A (en) | 2018-08-08 | 2018-08-08 | A kind of schottky diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810899042.1A CN108807555A (en) | 2018-08-08 | 2018-08-08 | A kind of schottky diode device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108807555A true CN108807555A (en) | 2018-11-13 |
Family
ID=64079740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810899042.1A Pending CN108807555A (en) | 2018-08-08 | 2018-08-08 | A kind of schottky diode device |
Country Status (1)
| Country | Link |
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| CN (1) | CN108807555A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659353A (en) * | 2018-12-05 | 2019-04-19 | 中国电子科技集团公司第十三研究所 | The Schottky diode of low dead resistance |
| CN112201685A (en) * | 2020-09-08 | 2021-01-08 | 浙江大学 | Super junction device and dielectric combined terminal |
| CN113410110A (en) * | 2021-05-07 | 2021-09-17 | 南通职业大学 | Semiconductor vacuum diode |
| WO2023098343A1 (en) * | 2021-12-02 | 2023-06-08 | 南京邮电大学 | Full-surrounding multi-channel drift region transverse power device and manufacturing method therefor |
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| CN1181559C (en) * | 2001-11-21 | 2004-12-22 | 同济大学 | Voltage-withstanding layer consisting of high dielectric coefficient medium and semiconductor |
| CN103137658A (en) * | 2011-11-30 | 2013-06-05 | 成都成电知力微电子设计有限公司 | Pressure-proof layer formed by insulator with conductive particles of semiconductor device and semiconductor |
| CN106129107A (en) * | 2016-07-01 | 2016-11-16 | 电子科技大学 | Semiconductor structure, semiconductor subassembly and power semiconductor |
| CN107393952A (en) * | 2017-07-12 | 2017-11-24 | 电子科技大学 | A kind of junction barrier schottky diode with complex media Rotating fields |
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2018
- 2018-08-08 CN CN201810899042.1A patent/CN108807555A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181559C (en) * | 2001-11-21 | 2004-12-22 | 同济大学 | Voltage-withstanding layer consisting of high dielectric coefficient medium and semiconductor |
| CN103137658A (en) * | 2011-11-30 | 2013-06-05 | 成都成电知力微电子设计有限公司 | Pressure-proof layer formed by insulator with conductive particles of semiconductor device and semiconductor |
| CN106129107A (en) * | 2016-07-01 | 2016-11-16 | 电子科技大学 | Semiconductor structure, semiconductor subassembly and power semiconductor |
| CN107393952A (en) * | 2017-07-12 | 2017-11-24 | 电子科技大学 | A kind of junction barrier schottky diode with complex media Rotating fields |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659353A (en) * | 2018-12-05 | 2019-04-19 | 中国电子科技集团公司第十三研究所 | The Schottky diode of low dead resistance |
| CN109659353B (en) * | 2018-12-05 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | Low parasitic resistance schottky diode |
| CN112201685A (en) * | 2020-09-08 | 2021-01-08 | 浙江大学 | Super junction device and dielectric combined terminal |
| CN112201685B (en) * | 2020-09-08 | 2022-02-11 | 浙江大学 | Super junction device and dielectric combined terminal |
| CN113410110A (en) * | 2021-05-07 | 2021-09-17 | 南通职业大学 | Semiconductor vacuum diode |
| CN113410110B (en) * | 2021-05-07 | 2023-08-08 | 南通职业大学 | Semiconductor vacuum diode |
| WO2023098343A1 (en) * | 2021-12-02 | 2023-06-08 | 南京邮电大学 | Full-surrounding multi-channel drift region transverse power device and manufacturing method therefor |
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