CN108807530A - Heterojunction field effect transistor and preparation method thereof - Google Patents
Heterojunction field effect transistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 238000002353 field-effect transistor method Methods 0.000 title abstract description 4
- 230000005669 field effect Effects 0.000 claims abstract description 39
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 22
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 229940112669 cuprous oxide Drugs 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 8
- 230000003827 upregulation Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention belongs to technical field of semiconductors, and in particular to a kind of heterojunction field effect transistor and preparation method thereof.The preparation method, includes the following steps：Substrate is provided；AlGaN/GaN epitaxially deposited layers are prepared over the substrate；Source electrode and drain electrode is prepared on the AlGaN/GaN epitaxially deposited layers；Using magnetron sputtering method on the AlGaN/GaN epitaxially deposited layers depositing p-type oxide, p-type oxide grid is made.The preparation method is simple for process, it both can be contaminated to avoid p-type oxide, it may be implemented to prepare the p-type oxide grid of higher concentration again, and also ensuring positive regulation ability to GaN base heterojunction field effect transistor threshold voltage, the device power of the final heterojunction field effect transistor is significantly improved.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of heterojunction field effect transistor and preparation method thereof.
Background technology
Cuprous oxide (Cu2O) it is a kind of I-IV races semi-conducting material haveing excellent performance, because it is direct with 2.1eV
Band gap and very high visible absorption coefficient, along with it has many advantages, such as nontoxic, low price, abundant raw material, therefore mostly by
Preparation applied to solar cell and photodetector components.Meanwhile Cu2O has photocatalytic activity, can directly utilize
The cracking that visible light carrys out catalytic water generates hydrogen, becomes the preferred material that energy conservation and environmental protection generates hydrogen area research.In addition, due to
Cu2The presence in the vacancy Cu, Cu in O crystal structures2O is assertive evidence p-type semiconductor, because of Cu2O has high mobility, so also often doing
It is combined with n-type semiconductor for channel material, is used for the preparation of thin film transistor (TFT) (TFTs).Therefore, Cu2O will be one kind in electricity
The thin-film material of, optics, semiconductor applications with particularly significant application prospect.By its film nano structure so that manufacture
More small dimension, more high energy efficiency semiconductor chip are possibly realized, it is made to be widely used in nanoelectronic component field.In addition,
Cu2O also has important application value in gas-monitoring field.In semiconductor optoelectronic growing today, Cu2O is even more conduct
Natural p-type electric-conducting material is shown one's talent.
After practical first generation Ge, the Si base device of development and second generation SiC, InP-base device, using GaN base as the of representative
The research and development of three generations's semiconductor material with wide forbidden band cause the attention of scientists.GaN base LED has completely passed into industrialization at present
Stage, and GaN base material relies on its energy gap EgGreatly, the features such as electron saturation velocities are high, and thermal conductivity is good and capable of being formed has
The AlGaN/GaN heterojunction structures of the two-dimensional electron gas (2DEG) of high concentration make GaN base power electronic devices especially suitable for height
The evils such as temperature, high frequency, high-power, radioresistance omit environment.
In technical field of semiconductors, traditional p-type Cu2The preparation method of O films is usually to pass through hot oxygen using metallic copper
Change method grows p-type Cu2O.Although this technology can form p-type Cu by Low temperature regulation oxidate temperature2O, but have
Very fatal disadvantage, after to be prepared for subsequent technique by photoetching process, Cu during this2O can be oxidized to aoxidize
Copper (CuO) and its surface also can be contaminated or introduce defect, and with traditional thermal oxidation method come the p-type Cu that grows2O is past
It is less than 1 × 10 toward its hole concentration16cm-3。
Invention content
It is an object of the invention to overcome the above-mentioned deficiency of the prior art, provide a kind of heterojunction field effect transistor and its
Preparation method, it is intended to solve the technology that existing GaN heterojunction field effect transistor threshold voltage ability of regulation and control is poor, power is low and ask
Topic.
For achieving the above object, the technical solution adopted by the present invention is as follows：
One aspect of the present invention provides a kind of preparation method of heterojunction field effect transistor, includes the following steps：
Substrate is provided；
AlGaN/GaN epitaxially deposited layers are prepared over the substrate；
Source electrode and drain electrode is prepared on the AlGaN/GaN epitaxially deposited layers；
Using magnetron sputtering method on the AlGaN/GaN epitaxially deposited layers depositing p-type oxide, be made p-type oxide
Grid.
The preparation method of heterojunction field effect transistor provided by the invention, it is different in AlGaN/GaN using magnetron sputtering method
P-type oxide grid is made in depositing p-type oxide on matter epitaxial layer；The preparation method is simple for process, can both be aoxidized to avoid p-type
Object is contaminated, and may be implemented to prepare the p-type oxide grid of higher concentration, and also ensures and imitated to GaN base heterojunction field
The positive regulation ability of transistor threshold voltage is answered, the device power of the final heterojunction field effect transistor is significantly carried
It is high.
Another aspect of the present invention provides a kind of heterojunction field effect transistor, including AlGaN/GaN epitaxially deposited layers, described
It is provided with source electrode and drain electrode on AlGaN/GaN epitaxially deposited layers；It is additionally provided with p on the AlGaN/GaN epitaxially deposited layers
The p-type oxide grid cap layer structure of type oxide composition.
Heterojunction field effect transistor provided by the invention is GaN base heterojunction field effect transistor, is provided with p-type
The p-type oxide grid cap layer structure of oxide composition；Compared with traditional schottky metal gate electrode, p-type oxide is direct
The characteristics such as the regulatable hole concentration of bandgap semiconductor material and energy gap more can effectively adjust GaN base heterostructure band knot
Structure, and then regulate and control threshold voltage, to realize the GaN base heterojunction field effect transistor of enhanced (threshold voltage is more than 0 volt)
Power device；The heterojunction field effect transistor can reduce unnecessary power attenuation and the device count of secondary circuit, carry
High integration, to realizing that application of the GaN base heterojunction field effect transistor in power electronics conversion is of great significance.
Description of the drawings
Fig. 1 is the hole current-carrying of cuprous oxide film in radical heterojunction field effect transistor prepared by the embodiment of the present invention 1
Sub- concentration (hole carrier density) and resistivity (resistivity) and sputtering power (sputtering power)
Graph of relation；
Fig. 2 possesses p-type Cu for prepared by the embodiment of the present invention 12The GaN hetero junction field effect crystal of O grid cap layer structures
The transfer characteristic comparison diagram of pipe and tradition GaN heterojunction field effect transistor.
Specific implementation mode
In order to make technical problems, technical solutions and advantageous effects to be solved by the present invention be more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
On the one hand, an embodiment of the present invention provides a kind of preparation methods of heterojunction field effect transistor, including walk as follows
Suddenly：
S01：Substrate is provided；
S02：AlGaN/GaN epitaxially deposited layers are prepared over the substrate；
S03：Source electrode and drain electrode is prepared on the AlGaN/GaN epitaxially deposited layers；
S04：Using magnetron sputtering method on the AlGaN/GaN epitaxially deposited layers depositing p-type oxide, p-type oxygen is made
Compound grid.
The preparation method of heterojunction field effect transistor provided in an embodiment of the present invention, using magnetron sputtering method in AlGaN/
P-type oxide grid is made in depositing p-type oxide on GaN epitaxially deposited layers；The preparation method is simple for process, both can be to avoid p
Type oxide is contaminated, and may be implemented to prepare the p-type oxide grid of higher concentration, and also ensures heterogeneous to GaN base
The device power of the positive regulation ability of junction field effect transistor threshold voltage, the final heterojunction field effect transistor is shown
It writes and improves.
Further, in above-mentioned steps S01：Substrate can be sapphire (Sapphire), and main component is aluminium oxide.
Further, in above-mentioned steps S03, before preparing source electrode and drain electrode, inductively coupled plasma is first passed through
Body (ICP) system forms the etching depth of 120nm, to ensure the disappearance of Two-dimensional electron gas channel between device, completes device isolation.
And the step of preparing source electrode and drain electrode, includes：Utilize magnetron sputtering method depositing Ti/Al/Ti/Au (50/200/40/40nm)
After multiple layer metal completes the preparation of source electrode and drain electrode, the N at 850 DEG C23 minutes are annealed in environment to form Ohmic contact.
If annealing temperature is less than 850 DEG C, then Ohmic contact cannot be formed very well, series resistance and contact resistance number can be made higher than 850 DEG C
Value increases, and influences device performance；If annealing time is less than 3 minutes, source electrode and drain metal cannot fully with AlGaN extensions
Layer reaction, cannot form Ohmic contact very well, and more than 3 minutes contact resistance numerical value can increase, and reducing influences device performance.Cause
This, anneals in the temperature and time, and best source electrode and drain electrode can be obtained.
Further, in above-mentioned steps S04, the p-type oxide is selected from p-type copper oxide, p-type cuprous oxide, p-type oxygen
Change any one in nickel and p-type magnesia.The embodiment of the present invention innovatively utilizes magnetron sputtering method at normal temperatures, by changing
The p-type oxide film that change sputtering power can form high quality utilizes magnetron sputtering method as grid after a photoetching
Depositing above-mentioned p-type oxide, grid is made in any one, to which realization prepares high-performance p-type oxide gate cap layer structure
GaN heterojunction field effect transistor.Specifically, p-type oxide preferred p-type cuprous oxide (Cu2O).The preparation method, can be to prevent
Only Cu2O is by for copper oxide (CuO) and Cu2O is contaminated.
The preparation process flow of the embodiment of the present invention can be by being splashed under conditions of a photoetching and room temperature using magnetic control
Penetrate method depositing p-type Cu2The deposition of O grids and subsequent Ni/Au not only simplifies technological process and also prevents Cu in this way2It is prepared by O
It pollutes and avoids in technique and prepare Cu under thermal oxidizing conditions2When O, the relatively low problem of hole concentration.
Further, the step of depositing the p-type oxide include：Using copper target as copper source, with the mixing of argon gas and oxygen
Gas is sputter gas and reaction gas, carries out magnetron sputtering processing.Specifically, the volume ratio of the argon gas and the oxygen is
15：3-4.The reaction power of the magnetron sputtering processing is 10-100W；The reaction pressure of the magnetron sputtering processing is 0.2-
0.3Pa.The oxide for removing copper target surface further includes being deoxygenated to the copper target surface with argon gas before reactive sputtering
The step of compound processing；Specifically, the step of deoxidation compound processing includes：With the sputtering power of 150-160W, lead to argon gas
10-12min。
On the other hand, the embodiment of the present invention additionally provides a kind of heterojunction field effect transistor, including AlGaN/GaN heterogeneous
Epitaxial layer is provided with source electrode and drain electrode on the AlGaN/GaN epitaxially deposited layers；The AlGaN/GaN epitaxially deposited layers
On be additionally provided with p-type oxide composition p-type oxide grid cap layer structure.
Heterojunction field effect transistor provided in an embodiment of the present invention is GaN base heterojunction field effect transistor, wherein setting
It is equipped with the p-type oxide grid cap layer structure of p-type oxide composition；Compared with traditional schottky metal gate electrode, p-type oxidation
The characteristics such as the regulatable hole concentration of object direct band-gap semicondictor material and energy gap more can effectively adjust GaN base hetero-junctions
Band structure, and then regulate and control threshold voltage, to realize the GaN base hetero junction field effect of enhanced (threshold voltage is more than 0 volt)
The power device of transistor；The heterojunction field effect transistor can reduce the device of unnecessary power attenuation and secondary circuit
Number improves integrated level, to realizing that application of the GaN base heterojunction field effect transistor in power electronics conversion has important meaning
Justice.
Specifically, above-mentioned p-type oxide is in p-type copper oxide, p-type cuprous oxide, p-type nickel oxide and p-type magnesia
Any one.These p-type oxides can be used in preparing the p-type oxide grid cap layers knot in device of the embodiment of the present invention
Structure.Further preferred p-type cuprous oxide.
The present invention successively carried out test of many times, and it is further detailed to invention progress as reference now to lift A partial experiment result
Thin description, is described in detail with reference to specific embodiment.
Embodiment 1
A kind of heterojunction field effect transistor, including AlGaN/GaN epitaxially deposited layers, the AlGaN/GaN hetero-epitaxies
It is provided with source electrode and drain electrode on layer；It is additionally provided with p-type Cu on the AlGaN/GaN epitaxially deposited layers2The p-type Cu of O compositions2O
Grid cap layer structure.
The preparation method of the heterojunction field effect transistor includes the following steps：
One, Sapphire Substrate is deposited into one layer of AlGaN/GaN heteroepitaxial structure material first, by the AlGaN/ of deposition
GaN heteroepitaxial structure materials are cleaned, and detailed process is as follows：
Use sulfuric acid：Hydrogen peroxide=4:1 mixed liquor boils several minutes at 100 DEG C, and then deionized water cleaning, acetone are super successively
It is cleaned in sound cleaning, EtOH Sonicate cleaning deionized water beaker.
Two, following (all preparation process are with sapphire to the preparation detailed process of source electrode, drain electrode and grid in device
P-type Cu is prepared based on AlGaN/GaN heteroepitaxial structure materials on substrate2The GaN heterojunction fields of O grid cap layer structures
Effect transistor)：
The etching depth for forming 120nm by inductively coupled plasma (ICP) system first, then passes through magnetron sputtering
After method depositing Ti/Al/Ti/Au (50/200/40/40nm) multiple layer metal completes the preparation of source electrode and drain electrode, at 850 DEG C
N23 minutes are annealed in environment to form Ohmic contact.Then use magnetron sputtering method by regulate and control argon gas and oxygen ratio and
Reaction power depositing p-type Cu2After O grids (100nm), Ni/Au (70/30nm) is finally deposited by magnetron sputtering method on it again
To form gate ohmic contact.
Above-mentioned p-type Cu2The preparation process of O grids is：The use of high-purity copper target (99.99%, analysis is pure) is copper source, with argon
Gas is sputter gas and reaction gas with oxygen mixed gas, prepares p-type Cu2O grids；Wherein, depositing temperature is room temperature, argon gas
With oxygen ratio=15:4, reaction power 10W, reaction pressure 0.2pa.In order to remove the oxide on copper target surface, anti-
Before should sputtering, with the sputtering power of 150W, surface treatment 10 minutes is carried out to copper target by argon gas.
The product that the process conditions of the present embodiment obtain is to possess p-type Cu2The GaN heterojunction fields of O grid cap layer structures are imitated
Answer transistor (i.e. Cu2O/HFET is indicated).
Before device performance is discussed, p-type in device is evaluated with atomic force microscope (AFM) and Hall test (Hall)
Cu2The quality of O films：It is carried out to p-type Cu using atomic force microscope2The surface roughness of O films is characterized, with deposition
The reduction of power, p-type Cu2Downward trend is presented in O roughness of film, and when deposition power is reduced to 10W, a standard
Amorphous p-type Cu2O films are formed.It is found simultaneously according to Hall test, as shown in Figure 1, with the reduction of deposition power,
Ascendant trend is presented in hole concentration, especially when deposition power is reduced to 10W, a highest hole concentration 1 × 1017cm-3It is obtained
It arrives.Then according to the p-type Cu of this optimization2O membrance casting conditions (magnetron sputtering reaction power=10W) prepare p-type Cu2O grid caps
The GaN heterojunction field effect transistor of layer structure, to study its electrology characteristic.
The excellent slightly property of device performance in order to compare the present embodiment, traditional GaN heterojunction field effect transistor is also produced.
By grid leakage current characteristic test as a result, it has been found that, as shown in Figure 2：There is p-type Cu2The GaN heterojunction fields of O grid cap layer structures are imitated
Transistor is answered, nearly two orders of magnitude smaller than the grid leakage current of traditional GaN heterojunction field effect transistor.Further through device
Output characteristics find, have p-type Cu2The GaN heterojunction field effect transistor of O grid cap layer structures, than traditional GaN hetero-junctions
The output current of field-effect transistor improves.We send out also by device transfer characteristic (logarithmic coordinates) simultaneously
It is existing, as shown in Figure 2：There is p-type Cu2GaN heterojunction field effect transistor (the Cu in Fig. 2 of O grid cap layer structures2O/HFET), than passing
The GaN heterojunction field effect transistor (HFET in Fig. 2) of system is closed other than threshold value has the forward migration of 0.55V in switch
The raising and electron mobility for having two orders of magnitude in terms of ON/OFF characteristics improve again, and subthreshold value pendulum
There has also been prodigious reductions for width (SS).
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (10)
1. a kind of preparation method of heterojunction field effect transistor, which is characterized in that include the following steps：
Substrate is provided；
AlGaN/GaN epitaxially deposited layers are prepared over the substrate；
Source electrode and drain electrode is prepared on the AlGaN/GaN epitaxially deposited layers；
Using magnetron sputtering method on the AlGaN/GaN epitaxially deposited layers depositing p-type oxide, p-type oxide grid is made.
2. preparation method as described in claim 1, which is characterized in that the p-type oxide is selected from p-type copper oxide, p-type aoxidizes
Any one in cuprous, p-type nickel oxide and p-type magnesia.
3. preparation method as described in claim 1, which is characterized in that the p-type oxide is p-type cuprous oxide, deposits institute
The step of stating p-type oxide include：Using copper target as copper source, using the mixed gas of argon gas and oxygen as sputter gas and reaction gas
Body carries out magnetron sputtering processing.
4. preparation method as claimed in claim 3, which is characterized in that the volume ratio of the argon gas and the oxygen is 15：3-
4。
5. preparation method as claimed in claim 3, which is characterized in that the reaction power of the magnetron sputtering processing is 10-
100W；And/or
The reaction pressure of the magnetron sputtering processing is 0.2-0.3Pa.
6. preparation method as claimed in claim 3, which is characterized in that further include using argon gas before the magnetron sputtering processing
The step of deoxidation compound processing is carried out to the copper target surface.
7. preparation method as claimed in claim 6, which is characterized in that the step of deoxidation compound processing includes：With 150-
The sputtering power of 160W leads to argon gas 10-12min.
8. such as claim 1-7 any one of them preparation methods, which is characterized in that the substrate is sapphire.
9. a kind of heterojunction field effect transistor, including AlGaN/GaN epitaxially deposited layers, the AlGaN/GaN epitaxially deposited layers
On be provided with source electrode and drain electrode；It is characterized in that, being additionally provided with p-type oxide on the AlGaN/GaN epitaxially deposited layers
The p-type oxide grid cap layer structure of composition.
10. heterojunction field effect transistor as claimed in claim 9, which is characterized in that the p-type oxide is selected from p-type oxygen
Change any one in copper, p-type cuprous oxide, p-type nickel oxide and p-type magnesia.
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