CN108807511A - 一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法 - Google Patents
一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法 Download PDFInfo
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- CN108807511A CN108807511A CN201810801124.8A CN201810801124A CN108807511A CN 108807511 A CN108807511 A CN 108807511A CN 201810801124 A CN201810801124 A CN 201810801124A CN 108807511 A CN108807511 A CN 108807511A
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 17
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
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- 239000005977 Ethylene Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201810133499.1A CN108376700A (zh) | 2018-02-09 | 2018-02-09 | 一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法 |
CN2018101334991 | 2018-02-09 |
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CN108807511A true CN108807511A (zh) | 2018-11-13 |
CN108807511B CN108807511B (zh) | 2024-02-02 |
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CN201810133499.1A Pending CN108376700A (zh) | 2018-02-09 | 2018-02-09 | 一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法 |
CN201821151831.9U Expired - Fee Related CN208478342U (zh) | 2018-02-09 | 2018-07-20 | 一种聚对苯二甲酸乙二酯衬底异质结构 |
CN201810801124.8A Active CN108807511B (zh) | 2018-02-09 | 2018-07-20 | 一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法 |
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CN201810133499.1A Pending CN108376700A (zh) | 2018-02-09 | 2018-02-09 | 一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法 |
CN201821151831.9U Expired - Fee Related CN208478342U (zh) | 2018-02-09 | 2018-07-20 | 一种聚对苯二甲酸乙二酯衬底异质结构 |
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Families Citing this family (1)
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CN108376700A (zh) * | 2018-02-09 | 2018-08-07 | 沈阳工程学院 | 一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000058903A (ja) * | 1998-08-07 | 2000-02-25 | Canon Inc | 位置検出素子およびその製造方法 |
JP2004172167A (ja) * | 2002-11-15 | 2004-06-17 | Zenji Hiroi | 遷移金属酸化物太陽電池 |
WO2008052067A2 (en) * | 2006-10-24 | 2008-05-02 | Applied Quantum Technology Llc | Semiconductor grain and oxide layer for photovoltaic cells |
WO2011118700A1 (ja) * | 2010-03-24 | 2011-09-29 | 独立行政法人産業技術総合研究所 | 光学用二酸化バナジウム薄膜の製造方法 |
CN104569061A (zh) * | 2015-01-26 | 2015-04-29 | 苏州纳格光电科技有限公司 | 金属氧化物半导体气体传感器及其制备方法 |
CN208478342U (zh) * | 2018-02-09 | 2019-02-05 | 沈阳工程学院 | 一种聚对苯二甲酸乙二酯衬底异质结构 |
-
2018
- 2018-02-09 CN CN201810133499.1A patent/CN108376700A/zh active Pending
- 2018-07-20 CN CN201821151831.9U patent/CN208478342U/zh not_active Expired - Fee Related
- 2018-07-20 CN CN201810801124.8A patent/CN108807511B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000058903A (ja) * | 1998-08-07 | 2000-02-25 | Canon Inc | 位置検出素子およびその製造方法 |
JP2004172167A (ja) * | 2002-11-15 | 2004-06-17 | Zenji Hiroi | 遷移金属酸化物太陽電池 |
WO2008052067A2 (en) * | 2006-10-24 | 2008-05-02 | Applied Quantum Technology Llc | Semiconductor grain and oxide layer for photovoltaic cells |
WO2011118700A1 (ja) * | 2010-03-24 | 2011-09-29 | 独立行政法人産業技術総合研究所 | 光学用二酸化バナジウム薄膜の製造方法 |
CN104569061A (zh) * | 2015-01-26 | 2015-04-29 | 苏州纳格光电科技有限公司 | 金属氧化物半导体气体传感器及其制备方法 |
CN208478342U (zh) * | 2018-02-09 | 2019-02-05 | 沈阳工程学院 | 一种聚对苯二甲酸乙二酯衬底异质结构 |
Non-Patent Citations (1)
Title |
---|
徐婷婷: "基于AZO/VO2/AZO结构的电压诱导相变红外光调制器", 物理学报, vol. 65, no. 24, pages 248102 - 1 * |
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Publication number | Publication date |
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CN208478342U (zh) | 2019-02-05 |
CN108807511B (zh) | 2024-02-02 |
CN108376700A (zh) | 2018-08-07 |
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Inventor after: Zhang Dong Inventor after: Li Yucai Inventor after: Zhao Yan Inventor after: Wang Jian Inventor after: Song Shiwei Inventor after: Wang Gang Inventor after: Ding Yanbo Inventor after: Wang Han Inventor after: Liu Liying Inventor before: Li Yucai Inventor before: Zhang Dong Inventor before: Zhao Yan Inventor before: Wang Jian Inventor before: Song Shiwei Inventor before: Wang Gang Inventor before: Ding Yanbo Inventor before: Wang Han Inventor before: Liu Liying |
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