CN108807114A - It is operated in the Terahertz EIO production methods and Terahertz EIO and resonant cavity of higher mode - Google Patents
It is operated in the Terahertz EIO production methods and Terahertz EIO and resonant cavity of higher mode Download PDFInfo
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- CN108807114A CN108807114A CN201810533135.2A CN201810533135A CN108807114A CN 108807114 A CN108807114 A CN 108807114A CN 201810533135 A CN201810533135 A CN 201810533135A CN 108807114 A CN108807114 A CN 108807114A
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- terahertz
- resonant cavity
- eio
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
- H01J25/10—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator
- H01J25/11—Extended interaction klystrons
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
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Abstract
The present invention relates to a kind of Terahertz EIO production methods being operated in higher mode and Terahertz EIO and resonant cavity, under higher mode working environment, pass through the optimization to operating voltage, electric current, under the premise of ensureing Terahertz extension interaction oscillator stabilization operation, resonance number of gaps in Terahertz extension interaction oscillator is determined；There is bigger difference with traditional extension interaction oscillator for being operated in basic mode.By selecting TM31Mould is as operating mode, under identical working frequency, the space expanded of resonant cavity.It does so, on the one hand improves the power capacity of intra resonant cavity, contribute to the output power for promoting device；On the other hand, device size is expanded, and can reduce the difficulty of microfabrication to a certain extent.The power output of about 85W, working frequency 338.4GHz may be implemented in final device.The design method for being operated in higher mode is suitable for improving the engineering realizability of the output power and device of Terahertz extension interaction oscillator.
Description
Technical field
The invention belongs to high-performance THz sources, and in particular to for improving Terahertz (Terahertz, Terahertz, 1THz
=1012Hz the high-frequency structure of interaction oscillator output power and feasibility) is extended.
Background technology
Terahertz (THz) wave refers to frequency (1THz=10 from 0.3THz to 3THz12Hz), between millimeter wave and infrared light it
Between electromagnetic wave, this is the frequency range that the last one mankind not yet recognizes and utilizes completely.THz wave is located at macroscopic classical theories
To the transitional region of Bcs Theory, due to residing specific position, cause its radiation have permeability strong, high resolution,
Unique advantages such as unionized is propagated, spectrum signature is abundant.These features of THz wave, make its information communication, medical diagnosis,
The fields such as biotechnology, material science, astronomy, military affairs have huge application potential, cause the height weight of countries in the world
Depending on.In Terahertz Technology, terahertz emission source is the basis of Terahertz application, but due to most of terahertz existing at present
The hereby influence of source job insecurity and not high factor of output power under room temperature environment, the further development of Terahertz science
Great restriction is received, therefore develops performance stabilization, be Terahertz skill with the terahertz emission source compared with high output performance
Art develops basic.
Up to the present, the method for vacuum electronics is to generate the most common means of high power terahertz emission at room temperature.
And in vacuum electron device, extension interaction device (Extended Interaction Devices, EIDs) is a kind of weight
The generation device wanted, it mainly contains oscillator and amplifier.Especially extension interaction oscillator (EIO) develops very fast
Speed, current commercialization EIO have had evolved to 220GHz frequency ranges.Canadian CPI companies are to carry out EIO in current world wide
The unit that Development Techniques are most advanced, experience is most abundant, the 220GHz continuous wave EIO devices of production, can reach 10W or so
Power output, bibliography：http://www.cpii.com/product.cfm/4/40/155 embodies higher design
And level of processing.
But continue to rise with working frequency, effect is crossed due to device altogether, extends the structure ruler of interaction device
Very little to have descended to submillimeter magnitude, the structure size of device proposes very high requirement to machining accuracy at this time.It is excessively smart
Thin structure feature considerably increases the difficulty of processing of device.Simultaneously as the resonant cavity in high-frequency structure has very high Q
Value, the excessively high power density of intracavitary extremely easy to produce electric spark phenomenon, seriously limit the power capacity of device entirety.
Invention content
In order to solve the realizability and reliability challenges of terahertz wave band EIO devices, the present invention proposes a kind of making
The method for being operated in the Terahertz extension interaction oscillator of higher modes, and the extension for devising based on this method 0.3THz is mutual
Action shaker, the device can steady operation, compared to be operated in identical frequency basic mode extend interaction oscillator, the high order
The structure size of mould extension interaction oscillator expands nearly twice.E-beam conditions of the oscillator of the present invention in 15kV, 160mA
Under, the power output of about 85W can be obtained, the working frequency of device is 338.4GHz.
Technical solution of the invention is to provide a kind of production method of Terahertz extension interaction oscillator, special
Place is, includes the following steps：
Step 1：Under higher mode working environment, by the optimization to operating voltage, electric current, ensureing Terahertz extension
Under the premise of interaction oscillator stabilization is run, resonance number of gaps in Terahertz extension interaction oscillator is determined；
Step 2：According to the synchronous condition of beam wave interaction, determine that the Terahertz extension interaction for being operated in higher mode is shaken
Swing the size in each resonance gap in device；
Step 3：According to output port reflectance factor, trapezoidal output waveguide structure size is determined；
Step 4：Terahertz, which is made, according to the parameter that step 1 to step 3 obtains extends interaction oscillator.
The present invention also provides the Terahertz extension interactions for being operated in higher mode that a kind of profit makes with the aforedescribed process to shake
Device is swung, is characterized in that：Including resonant cavity and trapezoidal output waveguide；
Above-mentioned resonant cavity includes along the n resonance gap that Z-direction arranges, and each resonance gap is along the section in the faces XY and YZ
Dumbbell shaped, resonance gap include reentrying part and positioned at the vacuum section for reentrying part both ends, 2n vacuum section and reentry portion
Divide the vacuum chamber for constituting resonant cavity；
The center of n reentry part is equipped with the electron beam channel of connection；The length direction for defining resonant cavity is Z-direction, resonance
The short transverse of chamber is Y-direction；
Above-mentioned trapezoidal output waveguide includes coupling aperture, transition and standard waveguide, and the xz of coupling aperture is less than to sectional dimension
The xz of standard waveguide is directly smoothly connected to sectional dimension, transition by coupling aperture and the two neighboring face of standard waveguide；Coupling
Hole is closed to couple with the cavity of resonant cavity vacuum chamber.
Further, coupling aperture and standard waveguide are rectangular waveguide.
Further, the overall width W1 in resonance gap is 0.8mm, and the width W2 for reentrying part is 0.5mm, electron beam channel
Diameter D1 be 0.3mm.
Further, n is equal to 24.
Further, the total height BH1 in each resonance gap is 2.2mm, and the height BH2 for reentrying part is 1.1mm；Resonance
The cycle length BL1 in gap is 0.2mm, and the wherein length BL2 of vacuum section is 0.1mm.
Further, the width OCW of coupling aperture is 0.5mm, and the width OWW of standard waveguide is 0.7mm；
The length OCL of coupling aperture is 0.2mm, and the height OCH of coupling aperture is 0.1mm, and the length OWL of standard waveguide is
The height OWH of 0.35mm, standard waveguide are 0.4mm, and the height OTH of transition is 1.0mm.
The present invention also provides a kind of resonant cavities, are characterized in that：Include along the n resonance gap that Z-direction arranges, each
Resonance gap is dumbbell shaped along the section in the faces XY and YZ, including reentries part and the vacuum section positioned at reentry part both ends,
2n vacuum section constitutes the vacuum chamber of resonant cavity with part is reentried；
The center of n reentry part is equipped with the electron beam channel of connection；The length direction for defining resonant cavity is Z-direction, resonance
The short transverse of chamber is Y-direction.
Further, the overall width W1 in resonance gap is 0.8mm, and the width W2 for reentrying part is 0.5mm, electron beam channel
Diameter D1 be 0.3mm.
Further, n is equal to 24；The total height BH1 in resonance gap is 2.2mm, and the height BH2 for reentrying part is 1.1mm；
The cycle length BL1 in resonance gap is 0.2mm, and the wherein length BL2 of vacuum section is 0.1mm.
Unlike EIO from conventional operation in basic mode, this EIO devices are operated in TM31Pattern, the work frequency of both of which
Rate is almost the same, and corresponding structural parameters are different.TM31The dimensional parameters ratio TM of structure11The dimension enlargement of structure is close
1 times, inner space capacity has also been enlarged nearly 1 times.
Advantages of the present invention：
1, the output power of Terahertz EIO can be effectively improved.High-frequency structure proposed by the present invention, by making it be operated in
TM31Mould can effectively expand the inner space in resonance gap, increase the power capacity of intra resonant cavity, make the output of device
Power is improved.In the EIO, output power can reach about 85W.
2, the difficulty of processing of fine structure can be reduced.Due to working using higher mode, the resonance characteristic of device makes
The size for obtaining the interstitial structure is expanded.Increase nearly 1 times in the height of resonance gap location, gap, in same machining accuracy
Under the conditions of, the processing of device realizes that difficulty is centainly alleviated.
3, device being capable of steady operation.Under higher mode working environment, by the optimization to operating voltage, electric current, rationally
Number of gaps is selected, had not only been effectively improved beam-wave interaction intensity, but also parasitic mode is avoided to shake, ensures that device can stablize fortune
Row.
Description of the drawings
The schematic cross-section of Fig. 1, extension interaction oscillator overall structure diagram and resonant cavity along the faces YZ；
Fig. 2, resonance gap along the faces XY schematic cross-section；
Fig. 3, trapezoidal output waveguide along the faces XY schematic cross-section；
Fig. 4, trapezoidal output waveguide along the faces YZ schematic cross-section；
Fig. 5 a, TM11The field distribution and structure size of mould；
Fig. 5 b, TM31The field distribution and structure size of mould；
Fig. 6, with TM31The output performance for the EIO that die worker makees；
Field distribution in Fig. 7, EIO；
The influence of Fig. 8, resonance number of gaps to EIO output performances.
Reference numeral is in figure：1- electron guns, 2- electron beam channels, 3- resonance gap, the trapezoidal output waveguides of 4-, 31- couplings
Close hole, 32- standard waveguides, 33- transitions.
Specific implementation mode
Below in conjunction with the accompanying drawings and specific embodiment the invention will be further described.It should be noted that in the present embodiment
All width are reversed X to length direction is Z-direction, and short transverse is Y-direction.
It will be seen from figure 1 that the present embodiment extends the entire high-frequency structure of interaction oscillator by 24 resonance gaps 3 and one
A trapezoidal output waveguide 4 forms.The direct current beamlet that hot-cathode electric rifle 1 generates enters electron beam channel 2, and with each resonance
Beam wave interaction occurs for the electric field at gap 3, and energy is handed to electromagnetic wave, will be generated eventually by trapezoidal output waveguide 4
Terahertz radiation go out.Herein, electron gun 1 is injected using desired electronic, operating voltage 15kV, electric current
160mA.The electron beam operating voltage that electron gun 1 generates is 15kV, operating current 160mA, and guiding magnetic field uses uniform magnetic field,
Intensity is 1.0T.In addition, the total height BH1 in resonance gap 3 is 2.2mm, the height BH2 for reentrying part is 1.1mm.Resonance gap
3 cycle length BL1 is 0.2mm, and the wherein length BL2 of vacuum section is 0.1mm.
Figure it is seen that the cross section (i.e. along the section in the faces XY) in resonance gap 3 is dumbbell shaped in the present embodiment, in
Between section be to reentry part, the width of interlude is less than the overall width in resonance gap, and the center for reentrying part is equipped with electron beam channel
2, electron beam channel 2 passes through the center in resonance gap, and electron beam is made to interact with gap electrical field.Resonance gap 3
Overall width W1, be 0.8mm, the width W2 for reentrying part is 0.5mm, and the diameter D1 of electron beam channel 2 is 0.3mm.
From figure 3, it can be seen that trapezoidal output waveguide 4 is made of coupling aperture 31, transition 33 and 32 three parts of standard waveguide,
Transition 33 is directly smoothly connected by coupling aperture 31 and 32 two neighboring face of standard waveguide.The wherein width of coupling aperture 31
OCW is 0.5mm, and the width OWW of standard waveguide 32 is 0.7mm, is coupled with resonant cavity by coupling aperture 31.
Fig. 4 is the longitudinal cross-section schematic diagram of trapezoidal output waveguide 4.The wherein length OCL of coupling aperture 31 is 0.2mm, coupling
The height OCH in hole 31 is 0.1mm, and the length OWL of standard waveguide 32 is 0.35mm, and the height OWH of standard waveguide 32 is 0.4mm,
The height OTH of transition 33 is 1.0mm.
Fig. 5 a and Fig. 5 b are respectively to be operated in the TM31Pattern and the TM with frequency11The resonance interstitial structure size and electricity of pattern
The comparison of field distribution.Here TM31The structure size of mould is consistent with the size that Fig. 1 and Fig. 2 is marked.Under identical working frequency,
TM31Structure size ratio TM111 times of structure size enlarged proximal.
Its groundwork process is：
To use this TM31The 0.3THz extension interaction oscillators for the high-frequency structure that die worker makees are the embodiment of the present invention,
The electron gun structure of front end generates the direct current beamlet of 160mA, DC voltage 15kV.
Electron beam is entered by electron beam channel in high-frequency structure under the guiding of the uniform magnetic field of 1.0T, between resonance
Continuous modulation is carried out by gap electrical field at gap, ultimately forms bunched beam group.Meanwhile clustering electron beam and TM31The electric field of mould occurs
Strong interaction transfers energy to electromagnetic wave, and the energy of electromagnetic wave is made effectively to be amplified, and along output coupling hole to
External radiation.Using three-dimensional volumetric display software UNIPIC result of calculation as shown in fig. 6,15kV, 160mA electronic beam current
Under driving, the EIO devices can steady operation, output power reaches nearly 85W, working frequency points 338.4GHz.Device inside
Applied electric field is distributed as shown in fig. 7, in the EIO, and field distribution pattern when steady operation in resonant cavity is the TM of standard31
Mould, it is consistent with Theoretical Design, it ensure that the work of device is not influenced by parasitic mode concussion.Intracavitary number of gaps is to output power
It influences as shown in Figure 8.By the analysis influenced on resonance number of gaps, it is 24 to select number of gaps, it is ensured that device it is defeated
Go out power and reaches highest.
The high-frequency structure for being operated in higher mode can not only improve the output power of EIO devices, and can be certain
The difficulty of processing of interstitial structure is reduced in degree.This method can ensure device steady operation, can effectively improve device
Output performance, and greatly improve the engineering feasibility of device.
Claims (9)
1. a kind of production method for the Terahertz EIO being operated in higher mode, which is characterized in that include the following steps：
Step 1：Under higher mode working environment, by the optimization to operating voltage, electric current, ensureing Terahertz extension interaction
Under the premise of being run with oscillator stabilization, resonance number of gaps in Terahertz extension interaction oscillator is determined；
Step 2：According to the synchronous condition of beam wave interaction, the Terahertz extension interaction oscillator for being operated in higher mode is determined
In each resonance gap size；
Step 3：According to output port reflectance factor, trapezoidal output waveguide structure size is determined；
Step 4：Terahertz, which is made, according to the parameter that step 1 to step 3 obtains extends interaction oscillator.
2. a kind of Terahertz EIO for being operated in higher mode made using method described in claim 1, it is characterised in that：Packet
Include resonant cavity and trapezoidal output waveguide；
The resonant cavity includes along the n resonance gap that Z-direction arranges, and each resonance gap is dumbbell along the section in the faces XY and YZ
Shape, resonance gap include reentrying part and positioned at the vacuum section for reentrying part both ends, 2n vacuum section and reentry part structure
At the vacuum chamber of resonant cavity；
The center of n reentry part is equipped with the electron beam channel of connection；The length direction for defining resonant cavity is Z-direction, resonant cavity
Short transverse is Y-direction；
The trapezoidal output waveguide includes coupling aperture, transition and standard waveguide, and the XZ of coupling aperture is less than standard to sectional dimension
The XZ of waveguide is directly smoothly connected to sectional dimension, transition by coupling aperture and the two neighboring face of standard waveguide；Coupling aperture
It is coupled with the cavity of resonant cavity vacuum chamber.
3. the Terahertz EIO according to claim 2 for being operated in higher mode, it is characterised in that：The overall width in resonance gap
W1 is 0.8mm, and the width W2 for reentrying part is 0.5mm, and the diameter D1 of electron beam channel is 0.3mm.
4. the Terahertz EIO according to claim 3 for being operated in higher mode, it is characterised in that：N is equal to 24.
5. the Terahertz EIO according to claim 4 for being operated in higher mode, it is characterised in that：Each resonance gap is total
Height BH1 is 2.2mm, and the height BH2 for reentrying part is 1.1mm；The cycle length BL1 in resonance gap is 0.2mm, wherein vacuum
Partial length BL2 is 0.1mm.
6. the Terahertz EIO according to claim 5 for being operated in higher mode, it is characterised in that：The width OCW of coupling aperture is
The width OWW of 0.5mm, standard waveguide are 0.7mm；
The length OCL of coupling aperture is 0.2mm, and the height OCH of coupling aperture is 0.1mm, and the length OWL of standard waveguide is 0.35mm,
The height OWH of standard waveguide is 0.4mm, and the height OTH of transition is 1.0mm.
7. a kind of resonant cavity, it is characterised in that：Include along the n resonance gap that Z-direction arranges, each resonance gap is along the faces XY and YZ
Section be dumbbell shaped, including reentry part and positioned at the vacuum section for reentrying part both ends, 2n vacuum section and reentry
Part constitutes the vacuum chamber of resonant cavity；
The center of n reentry part is equipped with the electron beam channel of connection；The length direction for defining resonant cavity is Z-direction, resonant cavity
Short transverse is Y-direction.
8. resonant cavity according to claim 7, it is characterised in that：The overall width W1 in resonance gap is 0.8mm, reentries part
Width W2 be 0.5mm, the diameter D1 of electron beam channel is 0.3mm.
9. resonant cavity according to claim 7 or 8, it is characterised in that：N is equal to 24；The total height BH1 in resonance gap is
2.2mm, the height BH2 for reentrying part are 1.1mm；The cycle length BL1 in resonance gap is 0.2mm, the wherein length of vacuum section
Degree BL2 is 0.1mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810533135.2A CN108807114B (en) | 2018-05-29 | 2018-05-29 | Terahertz EIO manufacturing method working in high-order mode, terahertz EIO and resonant cavity |
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| CN201810533135.2A CN108807114B (en) | 2018-05-29 | 2018-05-29 | Terahertz EIO manufacturing method working in high-order mode, terahertz EIO and resonant cavity |
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| CN108807114B CN108807114B (en) | 2019-12-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545638A (en) * | 2018-11-20 | 2019-03-29 | 西北核技术研究所 | A kind of resonant cavity and the Terahertz of intersection construction extend interaction oscillator |
| CN111524766A (en) * | 2020-04-07 | 2020-08-11 | 电子科技大学 | Processing method of multi-piece stacked terahertz high-frequency interaction system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3688152A (en) * | 1970-03-05 | 1972-08-29 | Siemens Ag | High power klystron |
| CN106098511A (en) * | 2016-07-08 | 2016-11-09 | 西北核技术研究所 | Microwave amplification method based on higher modes trapezium structure extension interaction klystron |
| CN106128918A (en) * | 2016-06-17 | 2016-11-16 | 电子科技大学 | Terahertz EIK high-frequency device |
| CN107068518A (en) * | 2017-03-31 | 2017-08-18 | 西北核技术研究所 | One kind extension interaction klystron and preparation method thereof |
-
2018
- 2018-05-29 CN CN201810533135.2A patent/CN108807114B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3688152A (en) * | 1970-03-05 | 1972-08-29 | Siemens Ag | High power klystron |
| CN106128918A (en) * | 2016-06-17 | 2016-11-16 | 电子科技大学 | Terahertz EIK high-frequency device |
| CN106098511A (en) * | 2016-07-08 | 2016-11-09 | 西北核技术研究所 | Microwave amplification method based on higher modes trapezium structure extension interaction klystron |
| CN107068518A (en) * | 2017-03-31 | 2017-08-18 | 西北核技术研究所 | One kind extension interaction klystron and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545638A (en) * | 2018-11-20 | 2019-03-29 | 西北核技术研究所 | A kind of resonant cavity and the Terahertz of intersection construction extend interaction oscillator |
| CN109545638B (en) * | 2018-11-20 | 2021-01-05 | 西北核技术研究所 | Terahertz extension interaction oscillator with resonant cavity and cross structure |
| CN111524766A (en) * | 2020-04-07 | 2020-08-11 | 电子科技大学 | Processing method of multi-piece stacked terahertz high-frequency interaction system |
| CN111524766B (en) * | 2020-04-07 | 2021-09-24 | 电子科技大学 | Processing method of multi-piece stacked terahertz high-frequency interaction system |
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