CN108803183B - Double-layer all-inorganic electrochromic device and preparation method thereof - Google Patents
Double-layer all-inorganic electrochromic device and preparation method thereof Download PDFInfo
- Publication number
- CN108803183B CN108803183B CN201810346457.6A CN201810346457A CN108803183B CN 108803183 B CN108803183 B CN 108803183B CN 201810346457 A CN201810346457 A CN 201810346457A CN 108803183 B CN108803183 B CN 108803183B
- Authority
- CN
- China
- Prior art keywords
- layer
- ion
- transparent conductive
- preparing
- electrochromic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1525—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material characterised by a particular ion transporting layer, e.g. electrolyte
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
Abstract
The invention relates to a double-layer all-inorganic electrochromic device and a preparation method thereof, wherein the double-layer all-inorganic electrochromic device comprises a lower isolating layer, a lower ion blocking layer, a lower transparent conducting layer B, a lower ion storage layer, a lower ion layer, a lower electrochromic layer, a lower transparent conducting layer A, a substrate, an upper transparent conducting layer A, an upper electrochromic layer, an upper ion storage layer, an upper transparent conducting layer B, an upper ion blocking layer and an upper isolating layer which are sequentially arranged from top to bottom; the double-layer all-inorganic electrochromic device can be formed on two sides of the substrate through a double-sided magnetron sputtering coating process. The invention has the advantages that: the double-layer all-inorganic electrochromic device can adjust the visible light transmittance to 50% -0.01%, further can greatly reduce the transmittance in a colored state, and achieves the effect of light-tight privacy; compared with a double-sided magnetron sputtering coating process, the double-sided magnetron sputtering coating process has lower cost.
Description
Technical Field
The invention belongs to the field of electrochromic devices, and particularly relates to a double-layer all-inorganic electrochromic device and a preparation method thereof.
Background
Electrochromism refers to a phenomenon in which optical properties (reflectivity, transmittance, absorption, etc.) undergo a stable, reversible color change under the action of an applied electric field. Electrochromic technology has been developed for more than forty years, and Electrochromic devices (ECDs) have wide application prospects in the fields of intelligent windows, displays, spacecraft temperature control modulation, automobile no-glare rearview mirrors, weapon equipment stealth and the like due to the characteristics of continuous adjustability of transmitted light intensity, low energy loss, open-circuit memory function and the like.
Electrochromic devices are typically 5-layer structures: for example, patent CN 107085339 a discloses a method for manufacturing an all-solid-state electrochromic device, where the all-solid-state electrochromic device is mentioned, the device is composed of an ITO glass substrate, an electrochromic layer, an electrolyte layer, an ion storage layer and a top layer of ITO in sequence, that is, the existing all-solid-state electrochromic device is generally a single-layer all-inorganic electrochromic device, the transmittance of which is 60% to 1%, and is not completely opaque to light, and has no effect of complete privacy under strong light.
Therefore, it is very necessary to develop a dual-layer all-inorganic electrochromic device and a preparation method thereof, which can greatly reduce the transmittance in a colored state and achieve the opaque privacy effect.
Disclosure of Invention
The invention aims to provide a double-layer all-inorganic electrochromic device which can greatly reduce the transmittance in a colored state and achieve the opaque privacy effect and a preparation method thereof.
In order to solve the technical problems, the technical scheme of the invention is as follows: the double-layer all-inorganic electrochromic device is characterized in that: the double-layer all-inorganic electrochromic device comprises a lower isolating layer, a lower ion blocking layer, a lower transparent conducting layer B, a lower ion storage layer, a lower ion layer, a lower electrochromic layer, a lower transparent conducting layer A, a substrate, an upper transparent conducting layer A, an upper electrochromic layer, an upper ion storage layer, an upper transparent conducting layer B, an upper ion blocking layer and an upper isolating layer which are sequentially arranged from top to bottom.
The preparation method of the double-layer all-inorganic electrochromic device has the innovation points that: the preparation method comprises the following steps:
(1) preparing an upper transparent conductive layer A and a lower transparent conductive layer A: taking a clean high-transparency material as a substrate, respectively forming a layer of high-temperature transparent conductive film with the thickness of 20 nm-100 nm on the upper surface and the lower surface of the substrate through vacuum coating, evaporation coating or sol-gel technology, and further respectively forming an upper transparent conductive layer A and a lower transparent conductive layer A on the upper surface and the lower surface of the substrate;
(2) preparing an upper electrochromic layer and a lower electrochromic layer: preparing an upper electrochromic layer and a lower electrochromic layer with the film thickness of 200 nm-600 nm on the upper surface of an upper transparent conducting layer A and the lower surface of a lower transparent conducting layer A by using metal tungsten as a target, oxygen as a working gas and the oxygen doping proportion of 2% -50% or oxide ceramic as the target through a double-sided magnetron sputtering coating process;
(3) preparing an upper ionic layer and a lower ionic layer: respectively plating a metal lithium ion layer with the thickness of 10 nm-300 nm on the upper surface of the upper electrochromic layer and the lower surface of the lower electrochromic layer in a plating mode to form an upper ion layer and a lower ion layer;
(4) preparing an upper ion storage layer and a lower ion storage layer: preparing an upper ion storage layer and a lower ion storage layer with the film thicknesses of 150nm to 650nm on the upper surface of an upper ion layer and the lower surface of a lower ion layer by using metal tungsten as a target material, oxygen as a working gas and the oxygen doping proportion of 0.5 percent to 20 percent or oxide ceramic as the target material through a double-sided magnetron sputtering coating process;
(5) preparing an upper transparent conductive layer B and a lower transparent conductive layer B: respectively forming a high-temperature transparent conductive film with the thickness of 200-400 nm on the upper surface of the upper ion storage layer and the lower surface of the lower ion storage layer by vacuum coating, evaporation coating or sol-gel process, and further forming an upper transparent conductive layer B and a lower transparent conductive layer B;
(6) preparing an upper ion barrier layer and a lower ion barrier layer: depositing an upper ion barrier layer and a lower ion barrier layer with the thickness of 20 nm-80 nm on the upper surface of the upper transparent conductive layer B and the lower surface of the lower transparent conductive layer B respectively by using Si/SiAl as a target material and adopting a double-sided magnetron sputtering coating process;
(7) preparing an upper isolation layer and a lower isolation layer: one or more of Si, Ti, Al or B is/are taken as a target material, and an upper isolation layer and a lower isolation layer with the thickness of 100 nm-1000 nm are respectively deposited on the upper surface of the upper ion barrier layer and the lower surface of the lower ion barrier layer by adopting a double-sided magnetron sputtering coating process.
Further, the transparent conductive film in the step (1) is a transparent conductive film with a square resistance of 5-15 ohm and an average visible light transmittance of more than 83%, and the transparent conductive film of the transparent conductive layer is one or more of ITO or AZO.
Further, WO is selected as the electrochromic film of the upper electrochromic layer and the lower electrochromic layer in the step (2)3、MO3、Nb2O5Or TiO2One or more of them.
Further, the lithium ion layer of the metal in the step (3) is doped with one or more of tantalum, niobium or cobalt materials.
Further, the ion storage films of the upper ion storage layer and the lower ion storage layer in the step (4) are NiOx or IrO2One or more of them.
Further, the transparent conductive film in the step (5) is a transparent conductive film with a square resistance of 5-15 ohm and an average visible light transmittance of more than 80%, and the transparent conductive film of the transparent conductive layer is one or more of ITO or AZO.
Furthermore, in the step (6), the ion barrier films of the upper ion barrier layer and the lower ion barrier layer are made of SiOx and Nb2O5、Ta2O5Or SiAlOx or a plurality of the SiAlOx.
The invention has the advantages that:
(1) according to the double-layer all-inorganic electrochromic device, the transparent conducting layer A, the electrochromic layer, the ion storage layer, the transparent conducting layer B, the ion blocking layer and the isolating layer are symmetrically arranged on two sides of the substrate to form the double-layer all-inorganic electrochromic device, the visible light passing rate can be adjusted to be 50% -0.01%, the transmittance in a colored state can be greatly reduced, and the opaque privacy effect is achieved;
(2) according to the preparation method of the double-layer all-inorganic electrochromic device, the double-layer all-inorganic electrochromic device can be formed on two sides of the substrate through a double-sided magnetron sputtering coating process, and compared with twice coating, the cost is lower; in addition, the process route of the invention can be well compatible with products such as planes, curved surfaces, flexibility and the like, and diversification of the products is realized;
(3) the invention relates to a preparation method of a double-layer all-inorganic electrochromic device, wherein an electrochromic layer is coated with metal tungsten as a target material, oxygen as a working gas and the oxygen doping proportion of 2-50%; the ion storage layer is coated with a film by taking metal tungsten as a target material and oxygen as working gas in an oxygen doping proportion of 0.5-20%, and the optical transmittance and the electrochromic performance of the double-layer all-inorganic electrochromic device can be modulated by changing the oxygen doping proportion;
(4) according to the preparation method of the double-layer all-inorganic electrochromic device, one or more of tantalum, niobium or cobalt materials are doped in the metal lithium ion layer, so that the characteristics of the ion layer can be effectively improved.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic structural diagram of a two-layer all-inorganic electrochromic device according to the present invention.
Detailed Description
The following examples are presented to enable one of ordinary skill in the art to more fully understand the present invention and are not intended to limit the scope of the embodiments described herein.
Examples
In the double-layer all-inorganic electrochromic device of the present embodiment, as shown in fig. 1, the double-layer all-inorganic electrochromic device includes a lower isolation layer 1, a lower ion blocking layer 2, a lower transparent conductive layer B3, a lower ion storage layer 4, a lower ion layer 5, a lower electrochromic layer 6, a lower transparent conductive layer A7, a substrate 8, an upper transparent conductive layer A9, an upper electrochromic layer 10, an upper ion layer 11, an upper ion storage layer 12, an upper transparent conductive layer B13, an upper ion blocking layer 14, and an upper isolation layer 15, which are sequentially disposed from top to bottom.
The preparation method of the double-layer all-inorganic electrochromic device comprises the following steps:
(1) preparing an upper transparent conductive layer A9 and a lower transparent conductive layer A7: the method comprises the following steps of taking clean organic glass as a substrate 8, respectively forming a layer of ITO transparent conductive film with the square resistance of 5-15 ohm and the average visible light transmittance of more than 83% on the upper surface and the lower surface of the substrate 8 by vacuum coating, evaporation coating or sol-gel process, wherein the square resistance is 20-100 nm, and an upper transparent conductive layer A9 and a lower transparent conductive layer A7 are respectively formed on the upper surface and the lower surface of the substrate 8;
(2) preparing the upper electrochromic layer 10 and the lower electrochromic layer 6: taking metal tungsten as a target material, oxygen as working gas, the doping proportion of the oxygen is 2-50%, and preparing an upper electrochromic layer with the film thickness of 200-600 nm on the upper surface of an upper transparent conducting layer A9 and the lower surface of a lower transparent conducting layer A7 by adopting a double-sided magnetron sputtering coating process10 and a lower electrochromic layer 6, and WO is selected as the electrochromic thin film of the upper electrochromic layer 10 and the lower electrochromic layer 63；
(3) Preparation of upper ionic layer 11 and lower ionic layer 5: respectively plating a metal lithium ion layer with the thickness of 10 nm-300 nm on the upper surface of the upper electrochromic layer 10 and the lower surface of the lower electrochromic layer 6 in a plating mode to form an upper ion layer 11 and a lower ion layer 5; in order to effectively improve the characteristics of the ion layer, one or more of tantalum, niobium or cobalt materials are doped in the metal lithium ion layer;
(4) the upper ion storage layer 12 and the lower ion storage layer 4 are prepared: taking metal tungsten as a target material, taking oxygen as a working gas, and adopting a double-sided magnetron sputtering coating process to prepare an upper ion storage layer 12 and a lower ion storage layer 4 with the film thickness of 150 nm-650 nm on the upper surface of an upper ion layer 11 and the lower surface of a lower ion layer 5, wherein the ion storage films of the upper ion storage layer 12 and the lower ion storage layer 4 are NiOx;
(5) preparing the upper transparent conductive layer 13 and the lower transparent conductive layer 3: respectively forming an ITO transparent conductive film with the square resistance of 5-15 ohm and the average visible light transmittance of more than 80% and the thickness of 200-400 nm on the upper surface of the upper ion storage layer 12 and the lower surface of the lower ion storage layer 4 by vacuum coating, evaporation coating or sol-gel process, and further forming an upper transparent conductive layer B13 and a lower transparent conductive layer B3;
(6) preparing the upper ion barrier layer 14 and the lower ion barrier layer 2: using Si/SiAl as a target material, and respectively depositing an upper ion barrier layer 14 and a lower ion barrier layer 2 with the thickness of 20 nm-80 nm on the upper surface of an upper transparent conducting layer B13 and the lower surface of a lower transparent conducting layer B3 by adopting a double-sided magnetron sputtering coating process, wherein SiOx is selected as an ion barrier film of the upper ion barrier layer 14 and the lower ion barrier layer 2;
(7) preparing an upper isolation layer 15 and a lower isolation layer 1: one or more of Si, Ti, Al or B is/are taken as a target material, and an upper isolation layer 15 and a lower isolation layer 1 with the thickness of 100 nm-1000 nm are respectively deposited on the upper surface of an upper ion barrier layer and the lower surface of a lower ion barrier layer by adopting a double-sided magnetron sputtering coating process.
In the embodiment, the substrate 8 can be made of any high-transparency material as well as organic glass; the transparent conductive film in the embodiment can also be AZO or a mixture of ITO and AZO; in the embodiment, the electrochromic thin films of the upper electrochromic layer 10 and the lower electrochromic layer 6 may also be MO3、Nb2O5、TiO2Or WO3、MO3、Nb2O5、TiO2(iv) a plurality of (a); the ion storage films of the upper ion storage layer 12 and the lower ion storage layer 4 in the embodiment may also be selected from IrO2Or NiOx and IrO2Mixing; the ion barrier films of the upper ion barrier layer 14 and the lower ion barrier layer 2 in the embodiment may also be Nb as the ion barrier films2O5、Ta2O5One of SiAlOx or SiOx, Nb2O5、Ta2O5And SiAlOx.
The double-layer all-inorganic electrochromic device prepared by the embodiment has the visible light transmittance of 50% -0.01%, so that the transmittance in a colored state can be greatly reduced, and the effect of light-tight privacy is achieved.
The foregoing shows and describes the general principles and features of the present invention, together with the advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A double-layer all-inorganic electrochromic device is characterized in that: the double-layer all-inorganic electrochromic device comprises a lower isolating layer, a lower ion blocking layer, a lower transparent conducting layer B, a lower ion storage layer, a lower ion layer, a lower electrochromic layer, a lower transparent conducting layer A, a substrate, an upper transparent conducting layer A, an upper electrochromic layer, an upper ion storage layer, an upper transparent conducting layer B, an upper ion blocking layer and an upper isolating layer which are sequentially arranged from bottom to top;
wherein, the substrate is positioned in the middle of the electrochromic device; the ion source comprises a lower isolation layer, a lower ion blocking layer, a lower transparent conducting layer B, a lower ion storage layer, a lower ion layer, a lower electrochromic layer, a lower transparent conducting layer A, an upper electrochromic layer, an upper ion storage layer, an upper transparent conducting layer B, an upper ion blocking layer and an upper isolation layer, wherein the substrate is used as the middle part and is symmetrically arranged, and a group of symmetrical layer structures are respectively formed under each preparation process by taking the substrate as the middle part.
2. A method for preparing the double-layer all-inorganic electrochromic device according to claim 1, wherein the method comprises the following steps: the preparation method comprises the following steps:
(1) preparing an upper transparent conductive layer A and a lower transparent conductive layer A: taking a clean high-transparency material as a substrate, respectively forming a layer of high-temperature transparent conductive film with the thickness of 20 nm-100 nm on the upper surface and the lower surface of the substrate through vacuum coating, evaporation coating or sol-gel technology, and further respectively forming an upper transparent conductive layer A and a lower transparent conductive layer A on the upper surface and the lower surface of the substrate;
(2) preparing an upper electrochromic layer and a lower electrochromic layer: preparing an upper electrochromic layer and a lower electrochromic layer with the film thickness of 200 nm-600 nm on the upper surface of an upper transparent conducting layer A and the lower surface of a lower transparent conducting layer A by using metal tungsten as a target, oxygen as a working gas and the oxygen doping proportion of 2% -50% or oxide ceramic as the target through a double-sided magnetron sputtering coating process;
(3) preparing an upper ionic layer and a lower ionic layer: respectively plating a metal lithium ion layer with the thickness of 10 nm-300 nm on the upper surface of the upper electrochromic layer and the lower surface of the lower electrochromic layer in a plating mode to form an upper ion layer and a lower ion layer;
(4) preparing an upper ion storage layer and a lower ion storage layer: preparing an upper ion storage layer and a lower ion storage layer with the film thicknesses of 150nm to 650nm on the upper surface of an upper ion layer and the lower surface of a lower ion layer by using metal tungsten as a target material, oxygen as a working gas and the oxygen doping proportion of 0.5 percent to 20 percent or oxide ceramic as the target material through a double-sided magnetron sputtering coating process;
(5) preparing an upper transparent conductive layer B and a lower transparent conductive layer B: respectively forming a high-temperature transparent conductive film with the thickness of 200-400 nm on the upper surface of the upper ion storage layer and the lower surface of the lower ion storage layer by vacuum coating, evaporation coating or sol-gel process, and further forming an upper transparent conductive layer B and a lower transparent conductive layer B;
(6) preparing an upper ion barrier layer and a lower ion barrier layer: depositing an upper ion barrier layer and a lower ion barrier layer with the thickness of 20 nm-80 nm on the upper surface of the upper transparent conductive layer B and the lower surface of the lower transparent conductive layer B respectively by using Si/SiAl as a target material and adopting a double-sided magnetron sputtering coating process;
(7) preparing an upper isolation layer and a lower isolation layer: one or more of Si, Ti, Al or B is/are taken as a target material, and an upper isolation layer and a lower isolation layer with the thickness of 100 nm-1000 nm are respectively deposited on the upper surface of the upper ion barrier layer and the lower surface of the lower ion barrier layer by adopting a double-sided magnetron sputtering coating process;
wherein, each layer structure is respectively formed under each preparation procedure by taking the substrate as the middle part.
3. The method for preparing a bi-layer all-inorganic electrochromic device according to claim 2, wherein: the transparent conductive film in the step (1) is a transparent conductive film with the square resistance of 5-15 ohm and the average visible light transmittance of more than 83%, and the transparent conductive film of the transparent conductive layer is one or more of ITO or AZO.
4. The method for preparing a bi-layer all-inorganic electrochromic device according to claim 2, wherein: WO is selected as the electrochromic film of the upper electrochromic layer and the lower electrochromic layer in the step (2)3、MO3、Nb2O5Or TiO2One or more of them.
5. The method for preparing a bi-layer all-inorganic electrochromic device according to claim 2, wherein: and (3) one or more of tantalum, niobium or cobalt materials are doped in the metal lithium ion layer in the step (3).
6. The method for preparing a bi-layer all-inorganic electrochromic device according to claim 2, wherein: the ion storage film of the upper ion storage layer and the lower ion storage layer in the step (4) is NiOx or IrO2One or more of them.
7. The method for preparing a bi-layer all-inorganic electrochromic device according to claim 2, wherein: the transparent conductive film in the step (5) is a transparent conductive film with the square resistance of 5-15 ohm and the average visible light transmittance of more than 80%, and the transparent conductive film of the transparent conductive layer is one or more of ITO or AZO.
8. The method for preparing a bi-layer all-inorganic electrochromic device according to claim 2, wherein: SiOx and Nb are selected as the ion barrier films of the upper ion barrier layer and the lower ion barrier layer in the step (6)2O5、Ta2O5Or SiAlOx or a plurality of the SiAlOx.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810346457.6A CN108803183B (en) | 2018-04-18 | 2018-04-18 | Double-layer all-inorganic electrochromic device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810346457.6A CN108803183B (en) | 2018-04-18 | 2018-04-18 | Double-layer all-inorganic electrochromic device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108803183A CN108803183A (en) | 2018-11-13 |
| CN108803183B true CN108803183B (en) | 2022-02-25 |
Family
ID=64094824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810346457.6A Active CN108803183B (en) | 2018-04-18 | 2018-04-18 | Double-layer all-inorganic electrochromic device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108803183B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110471230B (en) * | 2019-09-06 | 2021-10-08 | 南通繁华新材料科技有限公司 | Electrochromic glass and manufacturing method thereof |
| CN112987439A (en) * | 2019-12-14 | 2021-06-18 | 传奇视界有限公司 | Electrochromic glass and preparation method thereof |
| CN111286710B (en) * | 2020-03-30 | 2022-08-05 | 天津耀皮工程玻璃有限公司 | V for electrochromic-based glass 2 O 5 Preparation method of multi-layer ion storage layer |
| CN114563896A (en) * | 2022-01-27 | 2022-05-31 | 南方科技大学 | Multicolor inorganic all-solid-state electrochromic device and preparation method thereof |
| CN116819842A (en) * | 2023-05-23 | 2023-09-29 | 浙江大学 | Ultraviolet erasable screen, preparation method, ultraviolet erasable system and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315829A (en) * | 1989-06-14 | 1991-01-24 | Toyota Central Res & Dev Lab Inc | Fully solid-state type electrochromic material |
| CN202563219U (en) * | 2011-11-24 | 2012-11-28 | 亚树科技股份有限公司 | Electrochromic assembly |
| CN204406011U (en) * | 2015-02-04 | 2015-06-17 | 福建省诺希科技园发展有限公司 | A kind of have the electrochomeric glass intercepting ultraviolet and infrared function |
| CN104834145A (en) * | 2015-03-30 | 2015-08-12 | 上方能源技术(杭州)有限公司 | Laminated electrochromism glass and application thereof |
| CN105425498A (en) * | 2006-07-21 | 2016-03-23 | 法国圣戈班玻璃厂 | Glass type electrochemical/ electrically controllable device with variable optical and/or energetic characteristic |
| CN106959566A (en) * | 2017-03-01 | 2017-07-18 | 江苏繁华玻璃股份有限公司 | A kind of preparation method of quasi- solid-state electrochromic device |
-
2018
- 2018-04-18 CN CN201810346457.6A patent/CN108803183B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315829A (en) * | 1989-06-14 | 1991-01-24 | Toyota Central Res & Dev Lab Inc | Fully solid-state type electrochromic material |
| CN105425498A (en) * | 2006-07-21 | 2016-03-23 | 法国圣戈班玻璃厂 | Glass type electrochemical/ electrically controllable device with variable optical and/or energetic characteristic |
| CN202563219U (en) * | 2011-11-24 | 2012-11-28 | 亚树科技股份有限公司 | Electrochromic assembly |
| CN204406011U (en) * | 2015-02-04 | 2015-06-17 | 福建省诺希科技园发展有限公司 | A kind of have the electrochomeric glass intercepting ultraviolet and infrared function |
| CN104834145A (en) * | 2015-03-30 | 2015-08-12 | 上方能源技术(杭州)有限公司 | Laminated electrochromism glass and application thereof |
| CN106959566A (en) * | 2017-03-01 | 2017-07-18 | 江苏繁华玻璃股份有限公司 | A kind of preparation method of quasi- solid-state electrochromic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108803183A (en) | 2018-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108803183B (en) | Double-layer all-inorganic electrochromic device and preparation method thereof | |
| US20230176439A1 (en) | Electrochromic devices and methods | |
| Buch et al. | Review on electrochromic property for WO3 thin films using different deposition techniques | |
| EP0676059B1 (en) | Electrochromic devices | |
| US5757537A (en) | Electrochromic devices and methods | |
| JP4782283B2 (en) | Glazing with optically / optically controllable optical / energy properties | |
| KR101862200B1 (en) | Electrochromic glass system, smart windows glass system using the electrochromic glass system and production method of smart windows glass system | |
| EP2290438A1 (en) | Electrochromic devices having improved ion conducting layers | |
| CN108254989B (en) | All-solid-state electrochromic window, solid-state electrochromic mirror and preparation method of all-solid-state electrochromic window and solid-state electrochromic mirror | |
| CN111624829B (en) | Colorful electrochromic structure, preparation method and application thereof | |
| CN110095911B (en) | Preparation method of electrochromic device | |
| WO2022061953A1 (en) | Multi-color electrochromic structure having high brightness, saturation and purity, multi-color electrochromic device, and method for preparing structure | |
| WO2019006964A1 (en) | Electrochromic device and manufacturing method therefor, and color-changing glass | |
| CN112285982A (en) | All-solid-state electrochromic device with lithium aluminum silicate as electrolyte layer and preparation method thereof | |
| CN111694199A (en) | Adjustable reflectivity's electrochromic device and contain its electronic terminal | |
| WO1999003676A1 (en) | Counterelectrode layer | |
| KR102034444B1 (en) | Electrochromic Device | |
| CN217467429U (en) | All-solid-state inorganic electrochromic intelligent glass film system structure | |
| US20230367167A1 (en) | Multicolor electrochromic structure, fabrication method and application thereof | |
| CN212873159U (en) | Adjustable reflectivity's electrochromic device and contain its electronic terminal | |
| Wang et al. | 13.1 Thermochromic smart windows |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20181113 Assignee: Jiangsu prosperous Yingcai Technology Co.,Ltd. Assignor: NANTONG FANHUA NEW MATERIAL TECHNOLOGY Co.,Ltd. Contract record no.: X2022980008694 Denomination of invention: A double-layer all inorganic electrochromic device and its preparation method Granted publication date: 20220225 License type: Exclusive License Record date: 20220630 |