CN108803115A - 阵列基板及其制作方法、显示装置 - Google Patents

阵列基板及其制作方法、显示装置 Download PDF

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CN108803115A
CN108803115A CN201810737984.XA CN201810737984A CN108803115A CN 108803115 A CN108803115 A CN 108803115A CN 201810737984 A CN201810737984 A CN 201810737984A CN 108803115 A CN108803115 A CN 108803115A
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organic film
signal wire
underlay substrate
array substrate
electrode layer
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徐文清
李小龙
张小祥
刘明悬
吴祖谋
郭会斌
宋勇志
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Priority to CN201810737984.XA priority Critical patent/CN108803115A/zh
Publication of CN108803115A publication Critical patent/CN108803115A/zh
Priority to US16/503,053 priority patent/US11069719B2/en
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Abstract

本发明实施例公开一种阵列基板及其制作方法、显示装置，涉及显示技术领域，用于提升阵列基板的工艺良率及显示效果。所述阵列基板包括衬底基板以及依次层叠设在所述衬底基板一侧的信号线、有机膜层和电极层；所述有机膜层上设有减薄区域，所述减薄区域在所述衬底基板的正投影不覆盖所述信号线在所述衬底基板的正投影。本发明实施例提供的阵列基板及其制作方法、显示装置用于TFT阵列基板。

Description

阵列基板及其制作方法、显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法、显示装置。
背景技术
近年来，以薄膜晶体管(Thin Film Transistor，简称为TFT)作为对应像素单元驱动开关的TFT阵列基板，在手机、电脑等显示装置中的应用非常广泛。
请参阅图1，TFT阵列基板一般包括衬底基板1以及设在衬底基板1一侧的信号线2，信号线2与对应不同层设置的像素电极层4或公共电极层5之间通常设置有机膜层3。TFT阵列基板通过该有机膜层3可以有效减少其信号线2与对应像素电极4或公共电极5之间产生的寄生电容，进而能够有效降低TFT阵列基板的负载及功耗。
然而，由于有机膜层3中存在有部分遇热易挥发的有机物质，比如有机溶剂或小分子材料等，容易在阵列基板后续的制作工艺中遇热挥发，使得有机膜层3内部出现气泡；而且，一旦有气泡滞留在阵列基板中，将导致阵列基板制作不良，容易降低阵列基板的工艺良率及显示效果。
发明内容
本发明实施例的目的在于提供一种阵列基板及其制作方法、显示装置，用于提升阵列基板的工艺良率及显示效果。
为了实现上述目的，本发明实施例提供如下技术方案：
本发明实施例的第一方面提供一种阵列基板，包括衬底基板以及依次层叠设在衬底基板一侧的信号线、有机膜层和电极层；有机膜层上设有减薄区域，该减薄区域在衬底基板的正投影不覆盖信号线在衬底基板的正投影。
本发明实施例提供的阵列基板，根据有机膜层与信号线的对应关系，在有机膜层上设置减薄区域，具体为将有机膜层未位于信号线上方的部分，即有机膜层中对应在衬底基板上正投影不覆盖信号线在衬底基板上正投影的部分，也就是有机膜层的非必要区域减薄，以形成该减薄区域，能够有效减小有机膜层非必要区域的厚度，从而减少有机膜层中预热易挥发的有机物质的总存在量；而且，在有机膜层上设置减薄区域，还可以利用厚度较小的减薄区域，使得有机膜层中存在的预热易挥发的有机物质容易在有机膜层的烘干工艺中挥发，以完成有机膜层的脱气处理，从而避免阵列基板在其后续的制作工艺出现气泡滞留的现象。因此，本发明实施例提供的阵列基板在有机膜层上设置减薄区域，能够减少有机膜层中预热易挥发的有机物质的总存在量，并有效改善有机膜层在其烘干工艺中的脱气效果，从而提升阵列基板的工艺良率及显示效果。
基于上述阵列基板的技术方案，本发明实施例的第二方面提供一种阵列基板的制作方法，用于制作上述阵列基板，所述制作方法包括：提供一衬底基板；在衬底基板的一侧形成信号线；在衬底基板未被信号线覆盖的部分以及信号线背向衬底基板的一侧形成有机膜层，并在有机膜层上形成减薄区域，减薄区域在衬底基板的正投影不覆盖信号线在衬底基板的正投影；在有机膜层背向信号线的一侧形成电极层。本发明实施例提供的阵列基板的制作方法所能实现的有益效果，与上述技术方案提供的阵列基板所能达到的有益效果相同，在此不做赘述。
基于上述阵列基板的技术方案，本发明实施例的第三方面提供一种显示装置，所述显示装置包括上述技术方案所提供的阵列基板。本发明实施例提供的显示装置所能实现的有益效果，与上述技术方案提供的阵列基板所能达到的有益效果相同，在此不做赘述。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为相关阵列基板的结构示意图；
图2为本发明实施例提供的阵列基板的结构示意图；
图3为本发明实施例提供的有机膜层的结构示意图；
图4为本发明实施例提供的有机膜层在烘干时的脱气效果图；
图5为本发明实施例提供的阵列基板的制作方法流程图。
附图标记：
1-衬底基板， 2-信号线，
3-有机膜层， 4-像素电极层，
5-公共电极层， 6-薄膜晶体管，
61-栅极， 62-栅绝缘层，
63-有源层， 64-源漏极，
65-第一钝化层， 66-第二钝化层。
具体实施方式
为了进一步说明本发明实施例提供的阵列基板及其制作方法、显示装置，下面结合说明书附图进行详细描述。
请参阅图2-图4，本发明实施例提供了一种阵列基板，包括衬底基板1以及依次层叠设在衬底基板1一侧的信号线2、有机膜层3和电极层；有机膜层3上设有减薄区域A，减薄区域A在衬底基板1的正投影不覆盖信号线2在衬底基板1的正投影。
本发明实施例提供的阵列基板，根据有机膜层3与信号线2的对应关系，在有机膜层3上设置减薄区域A，具体为将有机膜层3未位于信号线2上方的部分，即有机膜层3中对应在衬底基板1上正投影不覆盖信号线2在衬底基板1上正投影的部分，也就是有机膜层3的非必要区域减薄，以形成该减薄区域A，能够有效减小有机膜层3非必要区域的厚度，从而减少有机膜层3中预热易挥发的有机物质的总存在量；而且，在有机膜层3上设置减薄区域A，还可以利用厚度较小的减薄区域A，使得有机膜层3中存在的预热易挥发的有机物质容易在有机膜层3的烘干工艺中挥发，以完成有机膜层3的脱气处理，从而避免阵列基板在其后续的制作工艺出现气泡滞留的现象。因此，本发明实施例提供的阵列基板在有机膜层3上设置减薄区域A，能够减少有机膜层3中预热易挥发的有机物质的总存在量，并有效改善有机膜层A在其烘干工艺中的脱气效果，从而提升阵列基板的工艺良率及显示效果。
可以理解的是，上述信号线2通常包括栅线和/或数据线；栅线和数据线一般采用金属材料制作形成。上述电极层通常包括像素电极层4和/或公共电极层5；像素电极层4和公共电极层5一般采用氧化铟锡(Indium Tin Oxide,简称ITO)材料制作形成。本发明实施例在信号线和电极层之间设置有机膜层3，主要是为了利用有机膜层3减少信号线与对应电极层之间产生的寄生电容，降低信号线的负载，进而降低阵列基板的负载及功耗，因此，有机膜层3的厚度一般较厚，本发明实施例将有机膜层3未位于信号线上方的部分，也就是有机膜层3的非必要区域减薄，并不会对降低信号线的负载产生不良影响。
需要说明的是，请继续参阅图2-图4，上述阵列基板还包括与信号线2同侧且阵列设在衬底基板1上的薄膜晶体管6。可选的，薄膜晶体管6采用底栅结构时，该薄膜晶体管6一般包括依次层叠设在衬底基板1上的栅极61、栅绝缘层62、有源层63、源漏极64以及第一钝化层65；其中，栅极61与栅线可同层设置，二者一般相连或为一体结构；源漏极64与数据线可同层设置，数据线一般与源漏极64中的源极相连或为一体结构。第一钝化层65背向衬底基板1的表面设置有上述有机膜层3，有机膜层3背向第一钝化层65的表面设置有像素电极层4，有机膜层3未被像素电极层4覆盖的部分以及像素电极层4背向有机膜层3的表面设置有第二钝化层66，第二钝化层66背向像素电极层4的表面设置有公共电极层5。
上述有机膜层3形成在第一钝化层65背向衬底基板1的表面，其减薄区域A在衬底基板的正投影还不覆盖薄膜晶体管在衬底基板的正投影，这也就是说有机膜层3未位于薄膜晶体管6上方的部分，也对应为有机膜层3的非必要区域，可以相应减薄其厚度，以便进一步减少有机膜层3中预热易挥发的有机物质的总存在量，并进一步改善有机膜层3在其烘干工艺中的脱气效果，从而能够进一步提升阵列基板的工艺良率及显示效果。上述有机膜层3在烘干时的脱气效果如图4所示。
值得一提的是，上述有机膜层3中减薄区域A的厚度可以根据实际需要自行设定。示例性的，通常可将有机膜层3减薄区域A的厚度至少减少2/3，即减薄区域A的厚度≤有机膜层非减薄区域的厚度的1/3；或者，设置有机膜层3减薄区域A的厚度≤1μm±0.2μm等。
本发明实施例还提供了一种阵列基板的制作方法，用于制作上述实施例所提供的阵列基板。请参阅图5，所述阵列基板的制作方法包括：
步骤S1，提供一衬底基板。
步骤S2，在衬底基板的一侧形成信号线。
上述信号线通常包括栅线和/或数据线；栅线和数据线一般采用金属材料制作形成。
上述在衬底基板的一侧形成信号线的步骤，具体可以表现为：在衬底基板的一侧形成栅线；或，在衬底基板的一侧形成数据线；或，在衬底基板的一侧分别形成栅线和数据线，栅线和数据线通常形成在不同层。
步骤S3，在衬底基板未被信号线覆盖的部分以及信号线背向衬底基板的一侧形成有机膜层，并在有机膜层上形成减薄区域；减薄区域在衬底基板的正投影不覆盖信号线在衬底基板的正投影。
上述有机膜层中减薄区域的形成，一般可以在制作形成有机膜层的过程中，利用光掩膜版一次制作成型。
步骤S5，在有机膜层背向信号线的一侧形成电极层。
上述电极层通常包括像素电极层和/或公共电极层；像素电极层和公共电极层一般采用氧化铟锡(Indium Tin Oxide,简称ITO)材料制作形成。
上述在有机膜层背向信号线的一侧形成电极层的步骤，具体可以表现为：在有机膜层背向信号线的一侧形成像素电极层；或，在有机膜层背向信号线的一侧形成公共电极层；或，在有机膜层背向信号线的一侧分别形成像素电极层和公共电极层，像素电极层和公共电极层通常形成在不同层。
本发明实施例在信号线和电极层之间设置有机膜层，主要是为了利用有机膜层减少信号线与对应电极层之间产生的寄生电容，降低信号线的负载，进而降低阵列基板的负载及功耗，因此，有机膜层的厚度一般较厚，本发明实施例将有机膜层未位于信号线上方的部分，也就是有机膜层的非必要区域减薄，并不会对降低信号线的负载产生不良影响。本发明实施例提供的阵列基板的制作方法所能实现的有益效果，与上述技术方案提供的阵列基板所能达到的有益效果相同，在此不做赘述。
值得一提的是，上述阵列基板通常还包括有与信号线同侧且阵列形成在衬底基板上的薄膜晶体管。可选的，薄膜晶体管采用底栅结构时，薄膜晶体管一般包括依次层叠形成在衬底基板上的栅极、栅绝缘层、有源层、源漏极以及第一钝化层；其中，栅极与栅线可以同层形成，即在一次构图工艺中形成，二者一般相连或为一体结构；源漏极与数据线可以同层形成，即在一次构图工艺中形成，数据线一般与源漏极中的源极相连或为一体结构。
上述有机膜层通常形成在第一钝化层背向衬底基板的表面，有机膜层背向第一钝化层的表面通常形成有像素电极层。有机膜层未被像素电极层覆盖的部分以及像素电极层背向有机膜层的表面形成有第二钝化层，第二钝化层背向像素电极层的表面通常形成有公共电极层。
上述有机膜层中减薄区域在衬底基板的正投影还不覆盖薄膜晶体管在衬底基板的正投影，这也就是说有机膜层未位于薄膜晶体管上方的部分，也对应为有机膜层的非必要区域，可以相应减薄其厚度，以便进一步减少有机膜层中预热易挥发的有机物质的总存在量，并进一步改善有机膜层在其烘干工艺中的脱气效果，从而能够进一步提升阵列基板的工艺良率及显示效果。
需要注意的是，请继续参阅图5，本发明实施例提供的阵列基板的制作方法，在实施步骤S5，即在有机膜层背向信号线的一侧形成电极层之前，还需要实施步骤S4，烘干有机膜层，对有机膜层进行脱气及固化。本发明实施例提供的阵列基板的制作方法，在形成有机膜层后，通过烘干工艺，可以对有机膜层进行有效的脱气处理及固化，并利用有机膜层的减薄区域，有效改善有机膜层在烘干工艺中的脱气效果，以确保阵列基板工艺良率及显示效果的提升效果。
本发明实施例还提供了一种显示装置，所述显示装置包括上述实施例提供的阵列基板。所述显示装置中的阵列基板与上述实施例中的阵列基板具有的优势相同，此处不再赘述。
上述实施例提供的显示装置可以为手机、平板电脑、笔记本电脑、显示器、电视机、数码相框或导航仪等具有显示功能的产品或部件。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (10)

1.一种阵列基板，其特征在于，包括衬底基板以及依次层叠设在所述衬底基板一侧的信号线、有机膜层和电极层；所述有机膜层上设有减薄区域，所述减薄区域在所述衬底基板的正投影不覆盖所述信号线在所述衬底基板的正投影。
2.根据权利要求1所述的阵列基板，其特征在于，所述信号线包括栅线和/或数据线。
3.根据权利要求1所述的阵列基板，其特征在于，所述电极层包括像素电极层和/或公共电极层。
4.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括与所述信号线同侧且阵列设在所述衬底基板上的薄膜晶体管；所述减薄区域在所述衬底基板的正投影还不覆盖所述薄膜晶体管在所述衬底基板的正投影。
5.根据权利要求1-4任一项所述的阵列基板，其特征在于，
所述减薄区域的厚度≤所述有机膜层非减薄区域的厚度的1/3；
或，所述减薄区域的厚度≤1μm±0.2μm。
6.一种阵列基板的制作方法，其特征在于，包括：
提供一衬底基板；
在所述衬底基板的一侧形成信号线；
在所述衬底基板未被所述信号线覆盖的部分以及所述信号线背向所述衬底基板的一侧形成有机膜层，并在所述有机膜层上形成减薄区域；所述减薄区域在所述衬底基板的正投影不覆盖所述信号线在所述衬底基板的正投影；
在所述有机膜层背向所述信号线的一侧形成电极层。
7.根据权利要求6所述的阵列基板的制作方法，其特征在于，在所述有机膜层背向所述信号线的一侧形成电极层之前，所述制作方法还包括：
烘干所述有机膜层，对所述有机膜层进行脱气及固化。
8.根据权利要求6或7所述的阵列基板的制作方法，其特征在于，所述在所述衬底基板的一侧形成信号线的步骤，包括：
在所述衬底基板的一侧形成栅线；
或，在所述衬底基板的一侧形成数据线；
或，在所述衬底基板的一侧分别形成栅线和数据线。
9.根据权利要求6或7所述的阵列基板的制作方法，其特征在于，所述在所述有机膜层背向所述信号线的一侧形成电极层的步骤，包括：
在所述有机膜层背向所述信号线的一侧形成像素电极层；
或，在所述有机膜层背向所述信号线的一侧形成公共电极层；
或，在所述有机膜层背向所述信号线的一侧分别形成像素电极层和公共电极层。
10.一种显示装置，其特征在于，包括如权利要求1～5任一项所述的阵列基板。
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