CN108796610A - A kind of growing silicon carbice crystals adjust and rotate the device and method of crucible in the process - Google Patents
A kind of growing silicon carbice crystals adjust and rotate the device and method of crucible in the process Download PDFInfo
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- CN108796610A CN108796610A CN201810629902.XA CN201810629902A CN108796610A CN 108796610 A CN108796610 A CN 108796610A CN 201810629902 A CN201810629902 A CN 201810629902A CN 108796610 A CN108796610 A CN 108796610A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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Abstract
A kind of growing silicon carbice crystals adjust and rotate the device and method of crucible in the process, which includes：To grow the crucible of single-crystal silicon carbide using physical vapor transport method, wrap up in the insulating layer around the crucible, induction coil on the outside of the insulating layer, it is placed with the pedestal of the crucible, it is connect with the pedestal by graphite bars and head rod and by crucible leveling regulating device placed in the middle, and is connected to the transfer device of the crystal growth equipment of the regulating device.The present invention provides a kind of easy devices connecting crucible and the transfer device of growth furnace by graphite bars, head rod and regulating device, make during growing silicon carbice crystals crucible not only about center rotation and can be placed in the middle with leveling, the uniformity in temperature field, improves the quality and yield rate of carborundum crystals when to realize in crystal growing process and cool down.
Description
Technical field
The invention belongs to carbofrax material fields, and in particular to one kind growing carborundum crystals based on physical vapor transport
The device and method of middle adjusting and rotation crucible.
Background technology
Silicon carbide（SiC）Monocrystal material has that energy gap is big, thermal conductivity is high, electronics saturation drift velocity is big, critical hits
Wear that electric field is high, dielectric constant is low, good chemical stability, it is considered to be manufacture opto-electronic device, Deep trench termination,
The ideal semi-conducting material of power electronic devices, in white-light illuminating, optical storage, screen display, space flight and aviation, hyperthermia radiation ring
Border, oil exploration, automation, radar and communications, automotive circuit diagram etc. are widely used.
Growth SiC crystal most efficient method is physical vapor transport at present（PVT）Method, first in the bottom of graphite crucible
It is respectively charged into high pure raw material and seed crystal with top, is wrapped up in around then in suitable temperature using insulation quilt outside crucible（2000~
2400℃）Under pressure（5~40Torr）It is volatilized by gas phase and grows carborundum crystals, the patent of invention applied such as applicant
Application（Application number：201711386301.2）In mention, during growing SiC crystal, overflow the partial gas phase component of crucible
It can react with components such as thermal insulation material, the graphite crucibles of surrounding, graphitization is caused to lead to thermal insulation material and graphite crucible
Local destroys, while the geometric position of the factors such as thermal insulation material, heating coil and bushing position has been difficult when each crystal growth
Holohedral symmetry, thermo parameters method is uneven when this can also cause crystal growth, and so as to cause the SiC crystal of growth, not only face type is not right
Claim, and internal stress distribution is also uneven, this will directly affect the quality and yield rate of SiC crystal.Therefore, how in silicon carbide
In crystal growing process realize uniform temperature fields distribution for high quality, large scale SiC crystal prepare it is most important.
Foreign patent documents（EP0554047A1）Mention in no crucible vapor phase growth silicon carbide crystal rotate seed body can
So that the temperature field of crystal growth is evenly.Domestic patent document（CN105316765A）It grows and is carbonized in physical vapor transport
Crucible is rotated when silicon crystal can improve the uniformity consistency of crystal, but equal for rotating the device of crucible in above patent document
Without reference to.Currently, only domestic patent document（CN105442038 A）Mention a kind of life of crucible rotation formula single-crystal silicon carbide
Long method, crucible rotating device is more complex, how to connect between each component and does not also illustrate, and is placed in the middle for crucible leveling
More without reference to.
Invention content
Therefore, present invention aims at provide and adjust during a kind of growing silicon carbice crystals and the device of rotation crucible
And method, the quality and yield rate of SiC crystal symmetrically, are improved in temperature field when realizing crystal growth.
One aspect of the present invention, which provides, to be adjusted during a kind of growing silicon carbice crystals and the device of rotation crucible, including：
To grow the crucible of single-crystal silicon carbide using physical vapor transport method,
The insulating layer around the crucible is wrapped up in,
Induction coil on the outside of the insulating layer,
It is placed with the pedestal of the crucible,
It is connect with the pedestal by graphite bars and head rod and by crucible leveling regulating device placed in the middle, and
It is connected to the transfer device of the crystal growth equipment of the regulating device.
The present invention provides a kind of transmission connecting crucible and growth furnace by graphite bars, head rod and regulating device
The easy device of device makes during growing silicon carbice crystals crucible not only about center rotation and can be placed in the middle with leveling, from
And realize the uniformity in crystal growing process with temperature field when cooling, improve the quality and yield rate of carborundum crystals.
In addition, previous growth attemperator is to carry out rotation push on the whole, it is not for thermal field even regulation effect
It is highly desirable, and the device of adjusting and rotation crucible provided by the invention with above structure can realize the independent rotation to crucible
Turn, integral-rotation different from the past push can more effectively ensure temperature field uniformity in crystal growing process.
Preferably, the pedestal is graphite base, and outside is equipped with the screens slot for ensuring that the crucible balance is placed, the bottom
There is screw thread at the center of seat.
Preferably, the upper and lower end of the graphite bars passes through spiral shell with the center of the pedestal and the head rod respectively
Line is fixedly connected.
Preferably, the upper and lower end of the head rod passes through screw thread with the graphite bars and the regulating device respectively
It is fixedly connected, the material of the head rod is stainless steel or ceramics.
The regulating device is joint arrangement, including：Two pieces of insides are respectively provided with the plate of groove, and intermediate ball is placed in
In the groove, two blocks of plates are connected by multiple connectors and are clamped the ball, make the earthenware by adjusting the connector
Crucible leveling is placed in the middle.Preferably, joint arrangement can be by the preparations such as metal, aluminium alloy or ceramics, especially metal side the simplest
Easy preparation.
Preferably, the connector includes at least three screws.
Preferably, the regulating device is connected to the transfer device by the second connecting rod, second connecting rod
Upper and lower end is threadably secured with the transfer device of the low side of the regulating device and the crystal growth equipment connect respectively,
The material of second connecting rod is stainless steel or ceramics.
Preferably, the length of the graphite bars, after end is fixedly connected with the center of the pedestal on it, lower end is more than
The induction coil bottommost 50mm or more.
Another aspect of the present invention provides a kind of using adjusting and the rotation in the process of above-mentioned apparatus progress growing silicon carbice crystals
The method of crucible, includes the following steps：
Raw material and seed crystal are packed into crucible,
The level of the crucible is adjusted by regulating device and position realizes that leveling is placed in the middle,
Single-crystal silicon carbide is grown in the crucible equipped with raw material and seed crystal using physical vapor transport method；
The crucible is individually rotated until the blowing out that cools down by the transfer device of crystal growth equipment.
By regulating device especially can be to pass through universal joint before crystal growth（Ball）Adjusting screw realize crucible
Horizontal positioned and position is placed in the middle, rotates when crystal growth and individually crucible by the transfer device of crystal growing furnace when cooling, protects
Demonstrate,prove temperature field uniformity in crystal growing process.It not only can be to avoid defect, Er Qieke caused by the asymmetry of crystal temperature effect field
Crystal stress is reduced to improve symmetry of crystals, effectively improves the quality and yield rate of the SiC crystal of preparation.
Description of the drawings
Fig. 1 is the knot that the growing silicon carbice crystals of one implementation form of the present invention adjusted and rotated the device of crucible in the process
Structure schematic diagram；
Fig. 2 and Fig. 3 is an implementation form of the invention with universal joint（Ball）In the tune of principle design, the universal joint of leveling（Ball）
Device.
Specific implementation mode
Referring to the drawings to the device and base of adjusting and rotation crucible during a kind of growing silicon carbice crystals of the present invention
In physical vapor transport grows leveling in carborundum crystals, method placed in the middle and individually rotation graphite crucible carries out specifically
Bright, the given examples are served only to explain the present invention, is not intended to limit the scope of the present invention.
Fig. 1 shows an implementation form of the device of adjusting and rotation crucible during growing silicon carbice crystals of the present invention,
It can be used for using physical vapor transport（PVT）Method is grown in SiC crystal in the leveling of graphite crucible, tune, and can real-time monitoring
Graphite crucible is rotated around center during growing silicon carbice crystals.
Specifically, as shown in Figure 1, growing carbon in the crucible 1 equipped with raw material and seed crystal using physical vapor transport method
SiClx monocrystalline.Crucible 1 is preferably graphite crucible.1 outside of crucible uses insulating layer（Such as insulation quilt 2）It wraps up in around 2 outside of insulation quilt
Induction coil 8 for heating.Wherein graphite crucible is placed on the base 3, and pedestal 3 is preferably graphite base, passes through cylinder
Graphite bars 4 be connected to outside insulation quilt 2,4 lower end of graphite bars is connected with metallic rod 5,5 lower end of metallic rod again with it is adjustable placed in the middle
Regulating device（It is universal joint in this implementation form（Ball）Device 6, detailed construction is aftermentioned）Upper end be connected, it is last universal
Section（Ball）6 lower end of device is connected by the metallic rod 6-1 of bottommost with the transfer device 7 of crystal growth equipment.
Pass through universal joint before crystal growth when shove charge（Ball）The screw 6-2 that three of device 6 can be used for leveling adjusts crucible 1
It is horizontally arranged and realizes that position is placed in the middle, crucible is individually rotated by the transfer device of crystal growth equipment 7 in crystal growing process
1, the symmetry and consistency in temperature field when realizing in crystal growing process and cooling down.
More specifically, 3 outside of pedestal, one circle of the graphite of the stable crucible 1 for placing graphite, which has, ensures that crucible 1 is flat
Weigh the screens slot placed.3 center of pedestal has screw thread, 3 outer diameter of pedestal to be more than 1 outer diameter 4mm~20mm of crucible.
4 upper and lower end of graphite bars is threadably secured and connect with 3 center of pedestal and metallic rod 5 respectively.About graphite bars 4
Length, after the upper end is fixedly connected with 3 center of pedestal, lower end must be more than 8 bottommost 50mm of induction coil or more, it is ensured that graphite bars
4 lower temperatures are relatively low, and being connect with metallic rod 5 will not be because overheat generates deformation.
The upper and lower end of metallic rod 5 respectively with graphite bars 4 and universal joint（Ball）Device 6 is threadably secured connection.Metallic rod
5 materials are not limited only to heat safe stainless steel, can also be the stiff materials such as heat safe ceramics.
This implementation form uses the bar of two kinds of connected unlike materials, if being due to all using graphite bars, graphite heat conducting
It is too fast, it is easier to have an adverse effect to bottom thermal field, be in order to the graphite crucible material for growing crystal using two kinds of different bars
The thermal field in bottom of chamber portion influences minimum；Lower part is harder using metallic rod simultaneously, is not in loss in repeatedly selection installation process
Deformation, and be easy graphite clast in multiple rotary installation process if graphite bars and deform, also it is unfavorable for growth of graphite
The central symmetry of crucible.
Universal joint（Ball）Device 6 is with universal joint（Ball）Principle designs, including two pieces of insides are respectively provided with the gold of ball-type groove
Belong to plate 6-3, intermediate metal ball 6-4 is placed in groove, and two pieces of metallic plates are fixedly connected by three screw 6-2 and clamp metal ball
6-4 can also realize that the leveling of crucible 1 is placed in the middle by adjusting three screw 6-2.In this embodiment though it is shown that three
Screw 6-2, however, the present invention is not limited thereto, the quantity of screw can also be 2 or is more than 3；As long as and two pieces of connection can be played
Metallic plate simultaneously realizes that the leveling of crucible 1 is placed in the middle, is also not necessarily limited to using the connector other than screw, for example, can be used in leveling tune
Gear foot.
Universal joint（Ball）The upper and lower end of the metallic rod 6-1 of 6 bottommost of device respectively with universal joint（Ball）Device low side and crystalline substance
The transfer device 7 of body growth furnace is threadably secured connection.The metallic rod 6-1 materials of bottommost are not limited only to the metals such as stainless steel
Material can also be other stiff materials such as ceramics.
To solve growth gaseous component and graphite crucible, guarantor in the PVT method SiC crystal growth courses described in background technology
Warm component etc., which reacts, causes temperature field symmetry in crystal growing process to be deteriorated, to influence the quality and yield rate of crystal
Problem, the present invention provide a kind of method carrying out adjusting and rotation crucible during growing silicon carbice crystals using above-mentioned apparatus.
In one implementation form, using physical vapor transport method preferably at a high temperature of 2,000 2400 DEG C equipped with raw material
With grow single-crystal silicon carbide in the graphite crucible of seed crystal, wrapped up in around wherein graphite crucible placement using insulation quilt outside graphite crucible
Have on internal thread or externally threaded graphite cake in bottom centre, graphite cake is connected by the graphite bars of the threaded cylinder in both ends
Be connected to outside attemperator, cylindrical graphite bars outer end is connected with stainless steel metal bar upper end, metallic rod lower end with it is adjustable
Universal joint placed in the middle（Ball）Upper end is connected, last universal joint（Ball）Lower end is filled by the transmission of metallic rod and crystal growth equipment
It sets and is connected, such as can be the transfer device described in patent document CN101928982A, however, patent document
CN101928982A only designs equipment and there is rotation push function, but be not directed to it is specific how design operation, and this implementation shape
State being capable of individually growth inside graphite crucible rotation push.Pass through universal joint before crystal growth（Ball）Three adjusting screws realize
The horizontal positioned and position of graphite crucible is placed in the middle, is individually revolved by the transfer device of crystal growing furnace when crystal growth and when cooling
Turn graphite crucible, ensures temperature field uniformity in crystal growing process.It can not only be caused to avoid crystal temperature effect field asymmetry
Defect, and symmetry of crystals can be improved to reduce crystal stress, effectively improve the SiC crystal of preparation quality and
Yield rate.The crucible present invention can realize that individually rotation crucible is different from previous growth attemperator integral-rotation push, for
Thermal field even regulation effect is even more ideal compared to previous device.
The method that graphite crucible leveling is centered about center rotation during real-time monitoring growing silicon carbice crystals, not only limits
In growing silicon carbice crystals, it is also applied to physical vapor transport and grows in other crystal.
In addition, the superhigh temperature material of other resistance to 2000 degrees Celsius of ramet etc. or more also can be used in the graphite bars in this implementation form
Material replaces.Joint arrangement in this implementation form can also be such as aluminium alloy, ceramics etc., but the most simple and convenient easy system of metal
It is standby.
Further description is carried out in the form of being preferably implemented to the device of the invention and method by following examples.
Embodiment 1
Single-crystal silicon carbide is grown in the graphite crucible equipped with raw material and seed crystal using physical vapor transport method, outside graphite crucible
It is wrapped up in using insulation quilt around wherein graphite crucible stabilization is placed on that one circle of outside has screens slot and bottom centre is female outer in portion
Diameter is more than on the graphite base plate of crucible outer diameter 6mm, and graphite base plate is connected by both ends threaded graphite cylinder bar upper end
It is connected to outside attemperator, and it is more than induction coil bottom 80mm to connect rear graphite cylinder bar lower end length, then graphite cylinder
Bar lower end is connected with stainless steel metal bar upper end, metallic rod lower end and adjustable universal joint placed in the middle（Ball）Upper end is connected,
Last universal joint（Ball）Lower end is connected with the transfer device of crystal growth equipment.Pass through universal joint before crystal growth when shove charge
（Ball）Three screws adjust graphite crucible horizontal position realize leveling it is placed in the middle, then vacuum degree is evacuated to 1.0 × 10-2 Pa with
Under, applying argon gas is started to warm up to growth pressure 14Torr to 2120 DEG C of growth temperature, while being filled by the transmission of crystal growing furnace
It sets and graphite crucible is individually rotated with 4 revs/min of speed, until cooling blowing out is just stopped rotating, realize crystal growth and drop
Uniform temperature fields are consistent when warm, and the SiC crystal that the symmetry that thickness is 18mm is good, defect is few is finally made.
Embodiment 2
Single-crystal silicon carbide is grown in the graphite crucible equipped with raw material and seed crystal using physical vapor transport method, outside graphite crucible
It is wrapped up in using insulation quilt around wherein graphite crucible stabilization, which is placed on one circle of outside, has screens slot and bottom centre to have outside externally threaded in portion
Diameter is more than on the graphite base plate of crucible outer diameter 20mm, and graphite base plate is connected by both ends threaded graphite cylinder bar upper end
It is connected to outside attemperator, and it is more than induction coil bottom 50mm to connect rear graphite cylinder bar lower end length, then graphite cylinder
Bar lower end is connected with stainless steel metal bar upper end, metallic rod lower end and adjustable universal joint placed in the middle（Ball）Upper end is connected,
Last universal joint（Ball）Lower end is connected with the transfer device of crystal growth equipment.Pass through universal joint before crystal growth when shove charge
（Ball）Three screws adjust graphite crucible horizontal position realize leveling it is placed in the middle, then vacuum degree is evacuated to 1.0 × 10-2 Pa with
Under, applying argon gas is started to warm up to growth pressure 10Torr to 2080 DEG C of growth temperature, while being filled by the transmission of crystal growing furnace
It sets and graphite crucible is individually rotated with 8 revs/min of speed, until cooling blowing out is just stopped rotating, realize crystal growth and drop
Uniform temperature fields are consistent when warm, and the SiC crystal that the symmetry that thickness is 20mm is good, defect is few is finally made.
It is noted that only the present invention is described in detail for above-mentioned specific implementation mode, it should not be to the present invention
Limitation.It for a person skilled in the art, can be there are many form when without departing from the objective and range of claim
With the variation of details.
Claims (9)
1. the device of crucible is adjusted and rotated during a kind of growing silicon carbice crystals, which is characterized in that including：
To grow the crucible of single-crystal silicon carbide using physical vapor transport method,
The insulating layer around the crucible is wrapped up in,
Induction coil on the outside of the insulating layer,
It is placed with the pedestal of the crucible,
It is connect with the pedestal by graphite bars and head rod and by crucible leveling regulating device placed in the middle, and
It is connected to the transfer device of the crystal growth equipment of the regulating device.
2. the device of crucible is adjusted and rotated during growing silicon carbice crystals according to claim 1, which is characterized in that
The pedestal is graphite base, and outside is equipped with the screens slot for ensuring that the crucible balance is placed, and the center of the pedestal has
Screw thread.
3. the device of crucible is adjusted and rotated during growing silicon carbice crystals according to claim 1, which is characterized in that
The upper and lower end of the graphite bars is threadably secured and connect with the center of the pedestal and the head rod respectively.
4. the device of crucible is adjusted and rotated during growing silicon carbice crystals according to claim 1, which is characterized in that
The upper and lower end of the head rod is threadably secured and connect with the graphite bars and the regulating device respectively,
The material of the head rod is stainless steel or ceramics.
5. the dress of crucible is adjusted and rotated during growing silicon carbice crystals as claimed in any of claims 1 to 4
It sets, which is characterized in that
The regulating device is joint arrangement, including：Two pieces of insides are respectively provided with the plate of groove, and intermediate ball is placed in described
In groove, two blocks of plates are connected by multiple connectors and are clamped the ball, make the crucible tune by adjusting the connector
In in normal times.
6. the device of crucible is adjusted and rotated during growing silicon carbice crystals according to claim 5, which is characterized in that
The connector includes at least three screws.
7. the device of crucible is adjusted and rotated during growing silicon carbice crystals according to claim 1, which is characterized in that
The regulating device is connected to the transfer device, the upper and lower end difference of second connecting rod by the second connecting rod
It is threadably secured and connect with the transfer device of the low side of the regulating device and the crystal growth equipment, second connection
The material of bar is stainless steel or ceramics.
8. the device of crucible is adjusted and rotated during growing silicon carbice crystals according to claim 1, which is characterized in that
The length of the graphite bars, after end is fixedly connected with the center of the pedestal on it, lower end is more than the line of induction
Enclose bottommost 50mm or more.
9. a kind of device using described in any one of claim 1 to 8 adjust during growing silicon carbice crystals and
Rotate the method for crucible, which is characterized in that include the following steps：
Raw material and seed crystal are packed into crucible,
The level of the crucible is adjusted by regulating device and position realizes that leveling is placed in the middle,
Single-crystal silicon carbide is grown in the crucible equipped with raw material and seed crystal using physical vapor transport method；
The crucible is individually rotated until the blowing out that cools down by the transfer device of crystal growth equipment.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111188089A (en) * | 2018-11-14 | 2020-05-22 | 昭和电工株式会社 | Apparatus for producing SiC single crystal and method for producing SiC single crystal |
| CN114963755A (en) * | 2022-05-06 | 2022-08-30 | 连城凯克斯科技有限公司 | Crucible rotating device for vertical silicon carbide induction synthesis furnace |
| CN115198366A (en) * | 2022-09-14 | 2022-10-18 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method of large-size silicon carbide crystals |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0554047A1 (en) * | 1992-01-28 | 1993-08-04 | Nisshin Steel Co., Ltd. | SiC single crystal growth |
| CN105256371A (en) * | 2015-11-30 | 2016-01-20 | 山东省科学院能源研究所 | Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method |
| CN105316765A (en) * | 2014-06-16 | 2016-02-10 | 台聚光电股份有限公司 | Apparatus for producing a plurality of single crystal silicon carbide crystals and method therefor |
| CN105442038A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible rotating-type silicon carbide single crystal growth method |
| CN106929919A (en) * | 2015-12-29 | 2017-07-07 | 中国科学院上海硅酸盐研究所 | A kind of growing silicon carbice crystals crucible |
| CN107142520A (en) * | 2017-05-17 | 2017-09-08 | 中国科学院电工研究所 | One kind control silicon carbide monocrystal growth device |
| CN108103575A (en) * | 2017-11-14 | 2018-06-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method and its device of low stress single-crystal silicon carbide |
-
2018
- 2018-06-19 CN CN201810629902.XA patent/CN108796610B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0554047A1 (en) * | 1992-01-28 | 1993-08-04 | Nisshin Steel Co., Ltd. | SiC single crystal growth |
| CN105316765A (en) * | 2014-06-16 | 2016-02-10 | 台聚光电股份有限公司 | Apparatus for producing a plurality of single crystal silicon carbide crystals and method therefor |
| CN105256371A (en) * | 2015-11-30 | 2016-01-20 | 山东省科学院能源研究所 | Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method |
| CN105442038A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible rotating-type silicon carbide single crystal growth method |
| CN106929919A (en) * | 2015-12-29 | 2017-07-07 | 中国科学院上海硅酸盐研究所 | A kind of growing silicon carbice crystals crucible |
| CN107142520A (en) * | 2017-05-17 | 2017-09-08 | 中国科学院电工研究所 | One kind control silicon carbide monocrystal growth device |
| CN108103575A (en) * | 2017-11-14 | 2018-06-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method and its device of low stress single-crystal silicon carbide |
Non-Patent Citations (2)
| Title |
|---|
| 撒利伟主编: "《工程测量》", 31 August 2013, 西安交通大学出版社 * |
| 黄明鑫主编: "《大型张弦梁结构的设计与施工》", 31 March 2005, 山东科学技术出版社 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111188089A (en) * | 2018-11-14 | 2020-05-22 | 昭和电工株式会社 | Apparatus for producing SiC single crystal and method for producing SiC single crystal |
| CN111188089B (en) * | 2018-11-14 | 2022-02-25 | 昭和电工株式会社 | Apparatus for producing SiC single crystal and method for producing SiC single crystal |
| US11306412B2 (en) | 2018-11-14 | 2022-04-19 | Showa Denko K.K. | SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method |
| CN114963755A (en) * | 2022-05-06 | 2022-08-30 | 连城凯克斯科技有限公司 | Crucible rotating device for vertical silicon carbide induction synthesis furnace |
| CN115198366A (en) * | 2022-09-14 | 2022-10-18 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method of large-size silicon carbide crystals |
| CN115198366B (en) * | 2022-09-14 | 2022-11-25 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method of large-size silicon carbide crystals |
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