CN108789135A - Chemical mechanical polishing pads - Google Patents
Chemical mechanical polishing pads Download PDFInfo
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- CN108789135A CN108789135A CN201810511239.3A CN201810511239A CN108789135A CN 108789135 A CN108789135 A CN 108789135A CN 201810511239 A CN201810511239 A CN 201810511239A CN 108789135 A CN108789135 A CN 108789135A
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- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing pads
- polytetramethylene ether
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides the chemical mechanical polishing pads that at least one of a kind of suitable semiconductor substrate, optical element and magnetic base material carry out surface planarisation processing.Chemical mechanical polishing pads of the present invention include the polishing layer that polyurethane foaming body is constituted, and it is 1 that the polishing layer, which includes by mass ratio,:4~1:The mixture and polytetramethylene ether diol performed polymer obtained by the reaction of 1 alicyclic polyisocyanates and aromatic polyisocyanate composition, and curing agent and polymeric hollow microsphere including poly- phthalic acid diglycol esterdiol and polyamine composition；The mass ratio of the wherein described polytetramethylene ether diol and poly- phthalic acid diglycol esterdiol is 20:1~1:20.Polishing pad of the present invention can inhibit the cut for being polished material surface, improve removal rate, provide acceptable planarization and degree of imperfection.
Description
Technical field
The present invention relates to CMP art, be specifically related to it is a kind of be suitable for semiconductor substrate, optical element and
The chemical mechanical polishing pads of magnetic substrate surface planarization process.
Background technology
In semiconductor substrate, optical element and magnetic substrate surface carry out high-precision planarization processing and manufacturing, chemical machine
Tool polishes（CMP）Technology is the technology of realization leveling best at present.CMP is will to be polished part in certain pressure
Under be pressed on the polishing pad for the polishing fluid for being saturated with being made of sub-micron or nano-abrasive and chemical solution, by means of polished part and throwing
The removal of the chemical reactant formed to polished part surface is completed in the relative motion of light pad by the mechanical friction of abrasive grain, is realized
Ultra-precision surface is processed and obtains the technology of smooth finish surface.
With component develop to fining, complication, high reliability direction and produce to automation, it is rapid, low at
This change direction rapidly strides forward, to CMP consumables（Such as polishing pad and polishing fluid）Demand and require also growing day by day, first device
The fining of part structure makes the requirement to CMP consumables more with the raising of more metallization levels and planarization reliability
It is high.Polyurethane polishing pad is most common polishing pad, and conventional polyurethane polishing pad is with wearability is good, polishing efficiency is high, becomes
The advantages that shape is small can realize efficient planarization processing, but when polyurethane polishing pad excessive high hardness, easily deposit in process
It is small deforming, it is easy to scratch polished part surface, brings polishing defect.Current most widely used polyurethane polishing pad is the U.S.
The IC1000 type polishing pads of Rodel companies production.
With the reduction of integrated circuit feature size, it is desirable that be polished part and be capable of providing more strictly planar property, in face
Uniformity and polishing efficiency, conventional polyurethane polishing pad are also brought by improving hardness while improving polishing efficiency
More defects, such as the problem of cut becomes bigger, therefore, this field needs persistently to improve polishing pad, it is good to provide
Resist degradation performance and good polishing efficiency.
For the benefit of the polyurethane polishing pad example of the generation of consistency and elasticity, raising polishing efficiency, inhibition cut can arrange
Lift Patent Documents 1 to 3.
In patent document 1（Application number 200980114547.1）In, disclose a kind of polyurethane foaming body and poly- using this
Polishing pad made of urethane foaming body, although the polyurethane foaming body have low-gravity, it may have be conducive to polishing pad hardness and
Elasticity.Pass through the polyalcohol series chain extender for making that there are 400 molecular weight below containing (A) polyisocyanates, (B) polyalcohol, (C)
The polyurethane foaming body is obtained by the reaction in the blend composition of (D) water, in the blend composition, using MDI as component (A)
Main component is blended, and when being 100 parts by weight with the total weight of (A), (B) and (C) each component, the blending amount of MDI is
45-70 parts by weight.
In patent document 2（Application number 201010240775.8）In, disclose a kind of be suitble to comprising copper, dielectric, resistance
The polishing pad that the patterned semiconductor substrate of at least one of barrier and tungsten is polished.Polishing pad includes polymer substrate；
The polymer substrate is the polyurethane reaction product of polyol blend, polyamines or polyamine mixture and toluene di-isocyanate(TDI).
Polyol blend is the mixture of the polypropylene glycol and polytetramethylene ether glycol of 15-77 weight %, which gathers
Propylene glycol is 20 with polytetramethylene ether glycol weight ratio：1 to 1：20.Polyamines or polyamine mixture account for 8-50 weight %；First
Phenylene diisocyanate is the monomer of the monomer of 15-35 weight % or the toluene di-isocyanate(TDI) of partial reaction.
In patent document 3（Application number 201480004696.3）In, a kind of polishing pad is disclosed, has 3 phases point
Polishing layer from structure, polishing velocity is big, and planarization characteristics are excellent, and can inhibit the generation of cut.The polishing pad of the present invention
With polishing layer, the polishing layer is formed by the reaction firming body of polyurethane raw material composition, the polyurethane raw material composition
Contain：Isocyanate-terminated prepolymer (A), by isocyanate prepolymer composition and the prepolymer material combination containing polyester polyol
Object (a) reaction obtains；Isocyanate-terminated prepolymer (B) by isocyanate prepolymer composition and contains the pre- of polyether alcohol
Polymers feedstock composition (b) reaction obtains；And cahin extension agent, the polyether alcohol include that number-average molecular weight 1000 is below
The polyether alcohol (D) of polyether alcohol (C) and 1900 or more number-average molecular weight, the reaction firming body is with 3 phases point
From structure.
Invention content
The purpose of the present invention is to solve above-mentioned technical problem, provide a kind of suitable semiconductor substrate, optical element and
At least one of magnetic base material carries out the chemical mechanical polishing pads of surface planarisation processing.
Polishing pad of the present invention includes the polishing layer that polyurethane foaming body is constituted, and it is 1 that the polishing layer, which includes by mass ratio,:4
~1:The mixture and polytetramethylene ether diol of 1 alicyclic polyisocyanates and aromatic polyisocyanate composition are obtained by the reaction
Performed polymer, and the curing agent and hollow polymeric that are formed including poly- phthalic acid diglycol esterdiol and polyamine
Object microballoon.
Alicyclic polyisocyanates of the present invention are isophorone diisocyanate（IPDI）, isophorone diisocyanate
The dimer of ester, the tripolymer of isophorone diisocyanate, dimerization diisocyanate, 1,1 '-di-2-ethylhexylphosphine oxides（4- hexamethylenes are different
Cyanate）（HMDI）, 1,4- cyclohexane diisocyanates（CHDI）, cyclohexane diisocyanate tripolymer in one kind, institute
It is 2,4- methyl diisocyanates to state aromatic polyisocyanate（TDI）, 1,5- naphthalene diisocyanates（NDI）, 4,4 '-diphenyl
Methane diisocyanate（MDI）In one kind.
The mass ratio of alicyclic polyisocyanates and aromatic polyisocyanate of the present invention is 1:4~1:1, preferably
2:7~2:3.
The inventors discovered that using alicyclic polyisocyanates, the cut for being polished material surface can be inhibited, use virtue
Fragrant race's polyisocyanates, can promote removal rate to improve；Control polyisocyanate mixtures in alicyclic polyisocyanates with
Polyalcohol in the mass ratio and polyisocyanate mixtures dosage of aromatic polyisocyanate, and control performed polymer and curing agent
Type and dosage can make inhibition be polished both cut and raising removal rate of material surface and reach desired balance, carry
For acceptable planarization, without accordingly increasing degree of imperfection.
Polyamine of the present invention be 3,5- diethyltoluene -2,4- diamines and its diethyltoluene -2 isomers 3,5-,
6- diamines.
Polyalcohol polytetramethylene ether diol of the present invention（PTMEG）With poly- phthalic acid diglycol ester two
Alcohol（PDEGPA）Mass ratio be 20:1~1:20, preferably 15:1~1:15.
Contain polymeric hollow microsphere in polishing layer of the present invention, by polymeric hollow microsphere type, shape, straight
The performance of diameter, density, additive amount adjustment polishing layer.
When the total amount of performed polymer and curing agent of the present invention is 100wt%, in performed polymer the content of polyisocyanates be 20.0~
40.0wt%, preferably 24.0~36.0wt%.
When the total amount of performed polymer and curing agent of the present invention is 100wt%, the content of polyalcohol is in performed polymer and curing agent
15.0~75.0wt%, preferably 23.0~68.0wt%.
When the total amount of performed polymer and curing agent of the present invention is 100wt%, in curing agent the content of polyamine be 5.0~
45.0wt%, preferably 8.0~41.0wt%.
The present invention is by controlling polyalcohol polytetramethylene ether diol（PTMEG）With poly- phthalic acid diglycol
Esterdiol（PDEGPA）Mass ratio and polyol blends dosage and polyamine dosage, be conducive to improve removal rate and drop
Low defect degree.
The shore D hardness of polishing pad of the present invention is 45-80D, preferably 48-76D.
When the hardness of polishing pad is less than 45D, the planarization characteristics of polishing pad are deteriorated；When the hardness of polishing pad is higher than 80D, hold
Easily cut is generated on the surface for being polished material.
Resin can come using urethane technology well known to fusion method, solwution method etc. in polyurethane foaming body of the present invention
Manufacture, it is contemplated that, it is preferable to use fusion method manufactures situations such as cost, processing, environment.
As the polymerization procedure of polyurethane resin, any one in prepolymer method, one-step method, but in order to ensure height
The transparency, the prepolymer preferably first blocked by organic multiple isocyanate and polyalcohol synthesizing isocyanate base, and make cahin extension agent with
Its prepolymer method reacted.In the case of prepolymer method, in order to be uniformly dispersed polymeric hollow microsphere, preferably in advance will in
Empty polymer microballoon and cahin extension agent mixing, then add isocyanate-terminated prepolymer.
In addition, as needed, can add catalyst, foaming agent, stabilizer, pigment, filler, antistatic agent and other
Additive.
Advantageous effect：
The present invention prepares the charging sequence and polyisocyanates of polishing layer, the specific raw material of polyalcohol and polyamine by optimization
And ratio, the mass ratio of alicyclic polyisocyanates and aromatic polyisocyanate in polyisocyanate mixtures is controlled, and more
Isocyanate mixture dosage inhibits the cut for being polished material surface, removal rate is promoted to improve.Polishing pad of the present invention is fitted
Surface planarisation processing is carried out at least one of semiconductor substrate, optical element and magnetic base material, is capable of providing acceptable
Planarization and degree of imperfection.
Specific implementation mode
Hereinafter in addition to being otherwise noted, " part " of record, " % " respectively represent " mass parts ", " quality % ".
Raw material
Polyisocyanates
Isophorone diisocyanate（IPDI）
1,1 '-di-2-ethylhexylphosphine oxides（4- cyclohexyl isocyanates）（HMDI）
1,4- cyclohexane diisocyanates（CHDI）
2,4- methyl diisocyanates（TDI）
1,5- naphthalene diisocyanates（NDI）
4,4 '-methyl diphenylene diisocyanates（MDI）
Polyalcohol
Polytetramethylene ether diol（PTMEG）
Poly- phthalic acid diglycol esterdiol（PDEGPA）
Polyamine
3,5- diethyltoluene -2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines（DETDA）
Embodiment 1
By 2,4- methyl diisocyanates（TDI）, 1,4- cyclohexane diisocyanates（CHDI）, polytetramethylene ether diol
（PTMEG）3h is reacted at 70 DEG C, and vacuum deaerator processing is then carried out at 80 DEG C, obtains isocyanate-terminated performed polymer.
By poly- phthalic acid diglycol esterdiol（PDEGPA）, 3,5- diethyltoluene -2,4- diamines and its
Isomers 3,5- diethyltoluene -2,6- diamines（DETDA）It is uniformly mixed, vacuum deaerator processing, cooling is then carried out at 80 DEG C
To 40 DEG C, hollow polymer microsphere is added（EXPANCEL®551DE20d60）, using high-speed mixer with the rotating speed of 4500rpm
It is uniformly mixed, is subsequently added into above-mentioned isocyanate-terminated prepolymer A and is mixed under the rotating speed of 3500rpm, it is final to mix
Object is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, 100 DEG C are risen to by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, 24 DEG C are down to by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, groove processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains embodiment polishing pad sample 1 by adhesive tape.
Embodiment 2~12
Using the method for embodiment 1, changes polyisocyanates type/dosage, polyalcohol dosage, polyamine and polymer microballoon and use
Amount, obtains embodiment polishing pad sample 2~12.
Comparative example 1
By 2,4- methyl diisocyanates（TDI）, 1,4- cyclohexane diisocyanates（CHDI）, polytetramethylene ether diol
（PTMEG）, poly- phthalic acid diglycol esterdiol（PDEGPA）3h is reacted at 75 DEG C, is then depressurized at 80 DEG C
Deaeration is handled, and obtains isocyanate-terminated performed polymer.
By 3,5- diethyltoluene -2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines（DETDA）80
DEG C vacuum deaerator processing is carried out, is cooled to 40 DEG C, hollow polymer microsphere is added（EXPANCEL®551DE20d60）, use height
Fast mixing machine is uniformly mixed with the rotating speed of 4500rpm, is subsequently added into above-mentioned isocyanate-terminated prepolymer A 3500rpm's
It is mixed under rotating speed, final mixture is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, 100 DEG C are risen to by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, 24 DEG C are down to by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, groove processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 1 by adhesive tape.
Comparative example 2
By 4,4 '-methyl diphenylene diisocyanates（MDI）, 1,4- cyclohexane diisocyanates（CHDI）, polytetramethylene ether
Glycol（PTMEG）3h is reacted at 70 DEG C, and vacuum deaerator processing is then carried out at 80 DEG C, obtains isocyanate-terminated performed polymer.
By 3,5- diethyltoluene -2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines（DETDA）80
DEG C vacuum deaerator processing is carried out, is cooled to 40 DEG C, hollow polymer microsphere is added（EXPANCEL®551DE20d60）, use height
Fast mixing machine is uniformly mixed with the rotating speed of 4500rpm, is subsequently added into above-mentioned isocyanate-terminated prepolymer A 3500rpm's
It is mixed under rotating speed, final mixture is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, 100 DEG C are risen to by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, 24 DEG C are down to by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, groove processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 2 by adhesive tape.
Comparative example 3
By 2,4- methyl diisocyanates（TDI）, polytetramethylene ether diol（PTMEG）3h is reacted at 70 DEG C, then at 80 DEG C
Vacuum deaerator processing is carried out, isocyanate-terminated performed polymer is obtained.
By poly- phthalic acid diglycol esterdiol（PDEGPA）, 3,5- diethyltoluene -2,4- diamines and its
Isomers 3,5- diethyltoluene -2,6- diamines（DETDA）It is uniformly mixed, vacuum deaerator processing, cooling is then carried out at 80 DEG C
To 40 DEG C, hollow polymer microsphere is added（EXPANCEL®551DE20d60）, using high-speed mixer with the rotating speed of 4500rpm
It is uniformly mixed, is subsequently added into above-mentioned isocyanate-terminated prepolymer A and is mixed under the rotating speed of 3500rpm, it is final to mix
Object is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, 100 DEG C are risen to by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, 24 DEG C are down to by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, groove processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 3 by adhesive tape.
Comparative example 4
By 4,4 '-methyl diphenylene diisocyanates（MDI）, polytetramethylene ether diol（PTMEG）3h is reacted at 70 DEG C, then
Vacuum deaerator processing is carried out at 80 DEG C, obtains isocyanate-terminated performed polymer.
By poly- phthalic acid diglycol esterdiol（PDEGPA）, 3,5- diethyltoluene -2,4- diamines and its
Isomers 3,5- diethyltoluene -2,6- diamines（DETDA）It is uniformly mixed, vacuum deaerator processing, cooling is then carried out at 80 DEG C
To 40 DEG C, hollow polymer microsphere is added（EXPANCEL®551DE20d60）, using high-speed mixer with the rotating speed of 4500rpm
It is uniformly mixed, is subsequently added into above-mentioned isocyanate-terminated prepolymer A and is mixed under the rotating speed of 3500rpm, it is final to mix
Object is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, 100 DEG C are risen to by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, 24 DEG C are down to by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, groove processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 4 by adhesive tape.
Embodiment and the raw materials used type of comparative sample and formula are shown in Table 1.
Determination of Hardness
Hardness is measured with reference to Unite States Standard ASTM D2240 using ASKER D type hardness tester meters.
The evaluation of polishing performance
Use Applied Materials, the Reflexion of Inc.®The polishing pad of polishing machine testing example, the platen of use
Rotating speed is 93rpm, and chip support head rotating speed is 87rpm, and lower pressure is 4psi, is polished to TEOS and SiN chips.
The removal efficiency that polishing pad is tested using Nano SpecII film thickness instruments uses KLA-Tencor SP2 couple
Polishing defect is detected, and polishing fluid used is Asahi CES 333F, with deionized water with 1：3 are used in mixed way, and use
Saesol C4 conditioner discs carry out diamond finishing by in-situ conditioning technique to pad interface.
The evaluation of planarization characteristics
The evaluation of planarization characteristics is carried out using following methods：After depositing 0.5 μm of heat oxide film on 12 inches of silicon wafer,
Carry out L/S (lines and space)=25 μm/5 μm and the patterning of L/S=5 μm/25 μm.Then 1 μm of oxygen is deposited
Change film (TEOS), it is the chip of 0.5 μm of pattern that making, which has initial stage difference in height,.And the chip is thrown under these conditions
Light, when whole height difference is 2000 or less, the grinding amount by measuring 25 μm of gaps bottom is evaluated.It is generally believed that grinding
The value of amount is smaller, and planarization characteristics are more excellent.
The evaluation of cut
12 8 inches of dummy wafer is polished under these conditions, then, the heat for being 10000 to deposited thickness
12 inch wafers of oxidation film polish within 1 minute.Then, the surface defect detection apparatus manufactured using KLA-Tencor companies
(Surfscan SP2), measures on chip after a polish that there are how many 0.16 μm or more of streaks.
1 embodiment of table and comparative example raw material type and formula
The physical data and polishing effect of mainstream polishing pad IC 1000 by embodiment and comparative example and in the market is compared,
Specific test data is shown in Table 2.
2 embodiment of table and comparative example and IC1000 test datas
From table 2 it can be seen that polishing pad prepared by embodiment 1~12, in TEOS removal rates, SiN removal rates, overall defect is put down
Performance is stablized in smoothization and cut number, disclosure satisfy that market and customer demand, and polishing pad prepared by comparative example 1~4 exists
TEOS removal rates, SiN removal rates, overall defect, in planarization and cut number at least two it is apparent be inferior to embodiment 1~
12, cannot meet the needs of market and client.Due to being free of polyalcohol, comparative example 3 and 4 in comparative example 1 and 2 curing agent reactants
Alicyclic polyisocyanates are free of in prepolymer reaction object, it is seen that contain polyalcohol in curing agent reactant, in prepolymer reaction object
Containing alicyclic polyisocyanates, advantageous effect is brought to polishing pad comprehensive performance.
Polishing pad prepared by the embodiment of the present invention 1~12 can reach on TEOS and SiN chips more than IC's 1000
Removal rate, and overall defect significantly reduces, planarization is excellent, and cut number is few, and polishing pad prepared by the display present invention can be with
Obtain more preferably comprehensive performance.
Claims (7)
1. a kind of chemical mechanical polishing pads are suitble to carry out table at least one of semiconductor substrate, optical element and magnetic base material
Face planarization process, the polishing pad include the polishing layer that polyurethane foaming body is constituted, which is characterized in that the polishing layer includes：
Performed polymer is 1 by mass ratio:4~1:1 alicyclic polyisocyanates and aromatic polyisocyanate composition mixture and
Polytetramethylene ether diol is obtained by the reaction,
Curing agent includes the mixture of poly- phthalic acid diglycol esterdiol and polyamine composition,
And polymeric hollow microsphere；
The mass ratio of the polytetramethylene ether diol and poly- phthalic acid diglycol esterdiol is 20:1~1:20.
2. chemical mechanical polishing pads as described in claim 1, which is characterized in that it is 2 that the polishing layer, which includes by mass ratio,:7
~2:The mixture and polytetramethylene ether diol of 3 alicyclic polyisocyanates and aromatic polyisocyanate composition are obtained by the reaction
Performed polymer, and the curing agent and hollow polymeric that are formed including poly- phthalic acid diglycol esterdiol and polyamine
Object microballoon.
3. chemical mechanical polishing pads as described in claim 1, which is characterized in that the alicyclic polyisocyanates are different Fo Er
Ketone diisocyanate, the dimer of isophorone diisocyanate, the tripolymer of isophorone diisocyanate, two isocyanide of dimerization
Acid esters, 1,1 '-di-2-ethylhexylphosphine oxides（4- cyclohexyl isocyanates）, 1,4- cyclohexane diisocyanates, cyclohexane diisocyanate
One kind in tripolymer, the aromatic polyisocyanate are 2,4- methyl diisocyanates, 1,5- naphthalene diisocyanates, 4,4
One kind in '-methyl diphenylene diisocyanate.
4. chemical mechanical polishing pads as described in claim 1, which is characterized in that the polyamine is 3,5- diethyltoluenes-
2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines.
5. chemical mechanical polishing pads as described in claim 1, which is characterized in that the polytetramethylene ether diol and poly- adjacent benzene
The mass ratio of dioctyl phthalate diglycol esterdiol is 15:1~1:15.
6. chemical mechanical polishing pads as described in claim 1, which is characterized in that the total amount of performed polymer and curing agent is 100wt%
When, the content of polyisocyanates is 20.0~40.0wt% in performed polymer, in curing agent the content of polyamine be 5.0~
45.0wt%。
7. chemical mechanical polishing pads as claimed in any one of claims 1 to 6, which is characterized in that the shore D of the polishing pad is hard
Degree is 45-80D.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111793186A (en) * | 2020-06-30 | 2020-10-20 | 山东一诺威聚氨酯股份有限公司 | Preparation method of polyurethane polishing pad layer |
| CN112223108A (en) * | 2020-08-31 | 2021-01-15 | 东莞金太阳研磨股份有限公司 | Formula and manufacturing method of diamond grinding pad |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010050268A1 (en) * | 2000-05-23 | 2001-12-13 | Reinhardt Heinz F. | Polishing pad of a polyurethane of propane diol |
| CN103862365A (en) * | 2014-01-21 | 2014-06-18 | 湖北鼎龙化学股份有限公司 | Polyurethane-material polishing pad and preparation method thereof |
| CN105171593A (en) * | 2015-08-11 | 2015-12-23 | 湖北鼎龙化学股份有限公司 | Weather-resisting chemico-mechanical polishing pad |
| CN106046313A (en) * | 2016-06-03 | 2016-10-26 | 湖北鼎龙化学股份有限公司 | Chemical-mechanical polishing pad, buffer layer and preparation method of buffer layer |
| JP2016196058A (en) * | 2015-04-03 | 2016-11-24 | 富士紡ホールディングス株式会社 | Polishing pad and method for manufacturing the same |
| CN106891246A (en) * | 2017-03-30 | 2017-06-27 | 湖北鼎龙控股股份有限公司 | A kind of chemical mechanical polishing pads for semiconductor, optical material and magnetic material surface planarisation |
| CN106965100A (en) * | 2017-04-19 | 2017-07-21 | 台山市远鹏研磨科技有限公司 | A kind of wet type polishing pad and preparation method thereof |
| CN108047420A (en) * | 2017-11-28 | 2018-05-18 | 湖北鼎龙控股股份有限公司 | A kind of polyurethane polishing layer and preparation method thereof |
-
2018
- 2018-05-25 CN CN201810511239.3A patent/CN108789135B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010050268A1 (en) * | 2000-05-23 | 2001-12-13 | Reinhardt Heinz F. | Polishing pad of a polyurethane of propane diol |
| CN103862365A (en) * | 2014-01-21 | 2014-06-18 | 湖北鼎龙化学股份有限公司 | Polyurethane-material polishing pad and preparation method thereof |
| JP2016196058A (en) * | 2015-04-03 | 2016-11-24 | 富士紡ホールディングス株式会社 | Polishing pad and method for manufacturing the same |
| CN105171593A (en) * | 2015-08-11 | 2015-12-23 | 湖北鼎龙化学股份有限公司 | Weather-resisting chemico-mechanical polishing pad |
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| CN106965100A (en) * | 2017-04-19 | 2017-07-21 | 台山市远鹏研磨科技有限公司 | A kind of wet type polishing pad and preparation method thereof |
| CN108047420A (en) * | 2017-11-28 | 2018-05-18 | 湖北鼎龙控股股份有限公司 | A kind of polyurethane polishing layer and preparation method thereof |
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| CN112223108A (en) * | 2020-08-31 | 2021-01-15 | 东莞金太阳研磨股份有限公司 | Formula and manufacturing method of diamond grinding pad |
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