CN108767122A - The preparation and its application of the mesoporous titanium dioxide film material of modified by graphene quantum dot - Google Patents
The preparation and its application of the mesoporous titanium dioxide film material of modified by graphene quantum dot Download PDFInfo
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- CN108767122A CN108767122A CN201810519550.2A CN201810519550A CN108767122A CN 108767122 A CN108767122 A CN 108767122A CN 201810519550 A CN201810519550 A CN 201810519550A CN 108767122 A CN108767122 A CN 108767122A
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- quantum dot
- graphene quantum
- titanium dioxide
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses the preparations and its application of a kind of mesoporous titanium dioxide film material of modified by graphene quantum dot, belong to optoelectronic materials technology.Graphene quantum dot solution is prepared first, and obtained graphene quantum dot solution is had into mesoporous TiO in deposition2It is infiltrated in the electro-conductive glass substrate of electron transfer layer, and then spin coating solution, the mesoporous titanium dioxide film material of modified by graphene quantum dot is made after finally annealing, can be used for the electron transfer layer of perovskite solar cell.The mesoporous titanium dioxide film material of modified by graphene quantum dot is prepared in the present invention in a kind of simple modifying interface method for the first time, and as the electron transport material of perovskite solar cell, preparation method is simple, film is smooth, and have the characteristics that relatively high solar cell photoelectric transfer efficiency, to extend the range of choice of electron transport material interface processing method in perovskite solar cell；And cost is reduced, there is beneficial economic benefit.
Description
Technical field
The invention belongs to optoelectronic materials technologies, and in particular to a kind of mesoporous TiO 2 of modified by graphene quantum dot
The preparation and its application of thin-film material.
Background technology
Perovskite solar cell (PSCs) with it have the cost of organic matter it is low, can solution prepare, easily film forming the features such as,
Also has the advantages that high absorptivity of inorganic matter, high carrier mobility simultaneously, battery performance surmounts rapidly dye sensitization too
Positive energy battery (DSSCs) and bulk heterojunction solar cell (BSCs), and very likely approach and surmount silica-based solar electricity
Pond performance, and occupy one seat in following solar cell market.From the point of view of current result of study, pass through battery structure
Adjustment, film morphology regulation and control and the methods of interface engineering technology, the performance of perovskite solar cell can obtain substantially
The promotion of degree.However, the solar cell properties of the type still reach far away satisfied result.The study found that battery performance
Insufficient reason is mainly due at contact interface, energy dissipation caused by the potential energy barrier that carrier extracts.Therefore, on boundary
Carbon material is introduced at face is conducive to detaching and transmitting for electronics.
Graphene quantum dot（GQDs）The nano material of quasi-zero dimension, movement of the internal electron in all directions all by
Limitation has many unique properties so quantum confinement effect is particularly evident.As the derivative of grapheme material, simultaneous
While having cared for graphene good characteristic, and relies on quantum confined effect and boundary effect and have the graphenes such as luminescence generated by light
Not available property, and also have better performance in cytotoxicity, biocompatibility etc.；In biology, medicine, material
The fields such as material, semiconductor device have important potential application.
At present with the straightforward procedure of modified by graphene quantum dot electron-transport bed boundary to promote perovskite solar cell
The report of photoelectric current is relatively fewer.In the present invention, using graphite as persursor material, graphene amount is prepared by nitric acid cutting
Sub-, ultrasonic disperse obtains graphene quantum dot solution in alcohol solvent and for modifying mesoporous TiO2Electron-transport stratum boundary
Face；Hybrid inorganic-organic (FAPbI3)1-x(MAPbBr3)xPerovskite solar cell is assembled for light absorbent.
Invention content
It is an object of the invention in view of the shortcomings of the prior art, providing a kind of meso-porous titanium dioxide of modified by graphene quantum dot
The preparation and its application of titanium film material.Preparation method of the present invention is simple, and film is smooth, and has relatively high solar-electricity
The features such as pond photoelectric conversion efficiency, to extend the choosing of electron transport material interface processing method in perovskite solar cell
Select range；And cost is reduced, there is beneficial economic benefit.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of preparation method of the mesoporous titanium dioxide film material of modified by graphene quantum dot, specifically includes following steps：
（1）By the graphite-filled in SiO of 0.3 g2In molecular sieve, 20 mL concentrated nitric acids are transferred in autoclave and are added, 160
DEG C baking oven in react 5 h；After reaction, product is washed with 50 mL deionized waters and is transferred in bag filter, dialysed 7 days；
Finally the product dialysed is scattered in ethyl alcohol, the graphene quantum dot solution of 1 mg/mL is prepared；
（2）By step（1）Obtained graphene quantum dot solution has mesoporous TiO in deposition2The electro-conductive glass base of electron transfer layer
10 s are infiltrated on bottom, and and then with 2000 revs/min of speed spin coating solution, after 100 DEG C of 30 min that anneal, the stone is made
The mesoporous TiO of black alkene quantum dot modification2Thin-film material.
The mesoporous TiO of modified by graphene quantum dot made from preparation method as described above2Thin-film material is used for perovskite
In solar cell, using the thin-film material as electron transport material, hybrid inorganic-organic (FAPbI3)1-x(MAPbBr3)xFor
Light absorbent, for Spiro-OMeTAD as hole mobile material, Au is to assemble perovskite solar cell to electrode.
The beneficial effects of the present invention are：Graphene is prepared in a kind of simple modifying interface method for the first time in the present invention
The mesoporous titanium dioxide film material of quantum dot modification, and as the electron transport material of perovskite solar cell, system
Preparation Method is simple, and film is smooth, and has the characteristics that relatively high solar cell photoelectric transfer efficiency, to extend calcium
The range of choice of electron transport material interface processing method in titanium ore solar cell；And cost is reduced, have beneficial
Economic benefit.
Description of the drawings
Fig. 1 is the mesoporous TiO based on modified by graphene quantum dot2Thin-film material as electron transport material perovskite too
The photoelectric properties figure of positive energy battery；
Fig. 2（a）For the transmission electron microscope picture of graphene quantum dot；Fig. 2（b）TiO is handled for graphene quantum dot2The scanning of mesoporous layer
Electron microscope and atomic force microscope 3D figures；
Fig. 3 is the mesoporous TiO based on modified by graphene quantum dot2Perovskite solar-electricity of the thin-film material as electron transfer layer
The box figure of pond performance profile, (a) short circuit current；(b) open-circuit voltage；(c) fill factor；(d) photoelectric conversion efficiency.
Specific implementation mode
Below in conjunction with specific embodiment, the present invention will be further described, but the present invention is not limited only to these embodiments.
Embodiment
A kind of preparation method of the mesoporous titanium dioxide film material of modified by graphene quantum dot, specifically includes following step
Suddenly：
（1）By the graphite-filled in SiO of 0.3 g2In molecular sieve, 20 mL concentrated nitric acids are transferred in autoclave and are added, 160
DEG C baking oven in react 5 h；After reaction, product is washed with 50 mL deionized waters and is transferred in bag filter, dialysed 7 days；
Finally the product dialysed is scattered in ethyl alcohol, the graphene quantum dot solution of 1 mg/mL is prepared；
（2）By step（1）Obtained graphene quantum dot solution has mesoporous TiO in deposition2The electro-conductive glass base of electron transfer layer
10 s are infiltrated on bottom, and and then with 2000 revs/min of speed spin coating solution, after 100 DEG C of 30 min that anneal, the stone is made
The mesoporous TiO of black alkene quantum dot modification2Thin-film material.
With the mesoporous TiO of modified by graphene quantum dot obtained2Thin-film material is as electron transport material, organic and inorganic
Hydridization (FAPbI3)1-x(MAPbBr3)xFor light absorbent, for Spiro-OMeTAD as hole mobile material, Au is to electrode, group
Perovskite solar cell is filled, and tests its photoelectric properties, the results are shown in Figure 1.It will be seen from figure 1 that in 100mW/cm2's
Under the conditions of light intensity, AM1.5, the mesoporous TiO based on modified by graphene quantum dot2Calcium titanium of the thin-film material as electron transport material
It is 20.45% that mine solar cell, which obtains highest photoelectric conversion efficiency,.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification should all belong to the covering scope of the present invention.
Claims (3)
1. the preparation method of the mesoporous titanium dioxide film material of modified by graphene quantum dot, it is characterised in that：Specifically include with
Lower step：
（1）By the graphite-filled in SiO of 0.3 g2In molecular sieve, 20 mL concentrated nitric acids are transferred in autoclave and are added, 160
DEG C baking oven in react 5 h；After reaction, product is washed with 50 mL deionized waters and is transferred in bag filter, dialysed 7 days；
Finally the product dialysed is scattered in ethyl alcohol, the graphene quantum dot solution of 1 mg/mL is prepared；
（2）By step（1）Obtained graphene quantum dot solution has mesoporous TiO in deposition2The electro-conductive glass base of electron transfer layer
10 s are infiltrated on bottom, and and then with 2000 revs/min of speed spin coating solution, after 100 DEG C of 30 min that anneal, the stone is made
The mesoporous titanium dioxide film material of black alkene quantum dot modification.
2. the mesoporous titanium dioxide film material of modified by graphene quantum dot made from a kind of preparation method as described in claim 1
Expect the application in perovskite solar cell.
3. application according to claim 2, it is characterised in that：With the mesoporous titanium dioxide film of modified by graphene quantum dot
Material is as electron transport material, hybrid inorganic-organic (FAPbI3)1-x(MAPbBr3)xFor light absorbent, Spiro-OMeTAD
As hole mobile material, Au is to assemble perovskite solar cell to electrode.
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Cited By (5)
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| CN109638163A (en) * | 2018-12-17 | 2019-04-16 | 齐齐哈尔大学 | It is a kind of using phosphotungstic acid as the perovskite solar battery and preparation method of boundary layer |
| CN109638093A (en) * | 2018-11-26 | 2019-04-16 | 国宏中晶集团有限公司 | Solar battery and preparation method thereof is covered in a kind of graphene-based primary coat |
| CN109802043A (en) * | 2019-01-15 | 2019-05-24 | 新疆交通建设集团股份有限公司 | Nitrogen sulphur codope graphene quantum dot perovskite light-absorption layer and preparation method thereof |
| CN110102341A (en) * | 2019-04-02 | 2019-08-09 | 华中科技大学 | A kind of CO2Restore photoelectric and preparation method thereof |
| CN111384267A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Preparation method of graphene quantum dot film, light-emitting diode and preparation method of light-emitting diode |
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| US20170338386A1 (en) * | 2016-05-19 | 2017-11-23 | Chung Yuan Christian University | Fabrication method for casting graphene quantum dots on light-emitting diodes and structure thereof |
| CN107579233A (en) * | 2017-09-11 | 2018-01-12 | 哈尔滨工业大学 | A kind of metal-doped silicon oxide molecular sieve/sulphur carbon complex and its preparation method and application |
| CN107579134A (en) * | 2017-08-28 | 2018-01-12 | 中国海洋大学 | Full-inorganic perovskite solar cell prepared based on continuous spin coating and its preparation method and application |
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| US20170338386A1 (en) * | 2016-05-19 | 2017-11-23 | Chung Yuan Christian University | Fabrication method for casting graphene quantum dots on light-emitting diodes and structure thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109638093A (en) * | 2018-11-26 | 2019-04-16 | 国宏中晶集团有限公司 | Solar battery and preparation method thereof is covered in a kind of graphene-based primary coat |
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| CN111384267A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Preparation method of graphene quantum dot film, light-emitting diode and preparation method of light-emitting diode |
| CN111384267B (en) * | 2018-12-29 | 2021-09-10 | Tcl科技集团股份有限公司 | Preparation method of graphene quantum dot film, light-emitting diode and preparation method of light-emitting diode |
| CN109802043A (en) * | 2019-01-15 | 2019-05-24 | 新疆交通建设集团股份有限公司 | Nitrogen sulphur codope graphene quantum dot perovskite light-absorption layer and preparation method thereof |
| CN110102341A (en) * | 2019-04-02 | 2019-08-09 | 华中科技大学 | A kind of CO2Restore photoelectric and preparation method thereof |
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Application publication date: 20181106 |