CN108767094A - A kind of CdxZn1-xWhite light LED part prepared by Se@ZnS quantum dots - Google Patents
A kind of CdxZn1-xWhite light LED part prepared by Se@ZnS quantum dots Download PDFInfo
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- CN108767094A CN108767094A CN201810463340.6A CN201810463340A CN108767094A CN 108767094 A CN108767094 A CN 108767094A CN 201810463340 A CN201810463340 A CN 201810463340A CN 108767094 A CN108767094 A CN 108767094A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 73
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000741 silica gel Substances 0.000 claims abstract description 13
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 13
- 239000000084 colloidal system Substances 0.000 claims abstract description 12
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 4
- 239000003446 ligand Substances 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 239000011701 zinc Substances 0.000 claims description 50
- 229910002601 GaN Inorganic materials 0.000 claims description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 6
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 5
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 5
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 5
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005642 Oleic acid Substances 0.000 claims description 5
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 5
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 5
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
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- 239000000376 reactant Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a kind of CdxZn1‑xWhite light LED part prepared by Se@ZnS quantum dots, include reflector equipped with radiator, the LED chips that are set to the reflector inside bottom, the diffuser closed with the reflective the cover and the quantum dot light emitting colloid for covering the LED chip surface, the quantum dot light emitting colloid is by CdxZn1‑xSe@ZnS quantum dots and silica gel are mixed with, the CdxZn1‑xSe@ZnS quantum dots are by CdxZn1‑xSe stratum nucleares and ZnS shells composition, the ZnS shell layer surfaces are enclosed with hydrophobic ligand, and wherein x is more than 0 and is less than 1.The quantum dot light emitting colloid of white light LED part provided by the invention is by CdxZn1‑xSe@ZnS quantum dots and silica gel are mixed with, CdxZn1‑xThe high conversion efficiency of Se@ZnS quantum dots, energy loss are low；CdxZn1‑xWhite light LED part prepared by Se ZnS quantum dots has the advantages that photochromic more uniform, luminous efficiency height, stability are good, has fabulous application prospect in lighting area.
Description
Technical field
The present invention relates to LED technology fields, more particularly, to a kind of CdxZn1-xIt is prepared by Se@ZnS quantum dots
White light LED part.
Background technology
Currently, light-emitting phosphor material has been widely applied to light emitting diode（LED）In lighting engineering, but it is glimmering
The selection of light powder must satisfy two conditions, and first is that the excitation spectrum of fluorescent powder must be with the transmitting of selected LED chip
Spectrum matches, and just can guarantee that phosphor material powder is efficiently excited in this way, obtains high light conversion efficiency；Second is fluorescent powder
The blue light that emission spectrum can be launched with blue chip is compounded to form white light, either can be compound or single under near ultraviolet excitation
Solely form white light.Meanwhile in order to ensure the performance of white light LEDs, fluorescent powder should also have the stability of physics, chemistry, moisture resistance, no
It has an effect with encapsulating material, semiconductor chip, particle is tiny to be not easy to reunite.The light decay of fluorescent powder is big, granulation uniformity is poor, makes
Still it is not best LED luminescent material, and blue chip traditional at present adds the packing forms of fluorescent powder to shine with short life
Diode（LED）, color rendering and color domain coverage ratio, illumination effect are relatively low.Traditional white light LED part has photochromic not equal enough
Disadvantage even, luminous efficiency is relatively low, stability is poor.
Therefore, it is badly in need of developing a kind of photochromic white light LED part more uniform, luminous efficiency is high, stability is good.
Invention content
The present invention be overcome described in the above-mentioned prior art it is photochromic not enough uniformly, luminous efficiency is relatively low, stability is poor
Defect provides a kind of CdxZn1-xSe@ZnS quantum dots prepare white light LED part, the white light LED part provided have it is photochromic more
Add advantage uniform, that luminous efficiency is high, stability is good.
In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of CdxZn1-xWhite light LED part prepared by Se@ZnS quantum dots includes reflector equipped with radiator, is set to institute
State the LED chips of reflector inside bottom, with the diffuser of the reflective the cover conjunction and for covering the LED chip surface
Quantum dot light emitting colloid, the quantum dot light emitting colloid is by CdxZn1-xSe@ZnS quantum dots and silica gel are mixed with, institute
State CdxZn1-xSe@ZnS quantum dots are by CdxZn1-xSe stratum nucleares and ZnS shells composition, the ZnS shell layer surfaces are enclosed with hydrophobic match
Body, wherein x are more than 0 and are less than 1.
CdxZn1-xWhen Se@ZnS quantum dots are used to prepare white light LED part, add fluorescence relative to conventional blu-ray LED chip
The white light LED part of powder, CdxZn1-xWhite light LED part made from Se@ZnS quantum dots has photochromic more uniform, luminous effect
The advantage that rate is high, stability is good.
Moreover, CdxZn1-xThe light conversion efficiency of Se@ZnS quantum dots is high, and energy loss is few.CdxZn1-xSe@ZnS quantum dots
Fluorescence lifetime is very long, therefore is advantageous to quick separating and the transmission of light induced electron, to improve the light of LED luminescence chips
Learn performance.
With gradually increasing for global energy crisis and people's energy conservation and environmental awareness, a large amount of energy conservation and environmental protection materials are come into
Our life, CdxZn1-xSe@ZnS quantum dots white light LEDs are expected to gradually replace because of the advantages that low, heat is small, long lifespan of consuming energy
Traditional illuminating material becomes the lighting source of a new generation.
Preferably, the CdxZn1-xA diameter of 2 ~ 10nm of Se@ZnS quantum dots.
Preferably, the CdxZn1-xThe excitation wavelength of Se@ZnS quantum dots is 280 ~ 770nm.
CdxZn1-xSe@ZnS quantum dot products are with CdxZn1-xSe is stratum nucleare, ZnS is shell and surface by hydrophobic ligand packet
The core/shell type fluorescent nano material wrapped up in, grain size are made of hundreds of to few thousand atoms between 2-10nm, have grain size
Uniform, absorption spectrum is wide, and emission spectrum is narrow and piles, and fluorescence intensity is high and the features such as stabilization.Excitation wavelength range be 280 ~
770nm。
Preferably, the CdxZn1-xSe@ZnS quantum dots are prepared by following steps：
S1. the oleic acid solutions containing cadmium ion and zinc ion are prepared；Prepare the 1- octadecylene solution containing Se；Preparation contains S's
Tributyl phosphate solution；The molar ratio of the cadmium ion and zinc ion is 1:10；Reaction system keeps oxygen-free environment；
S2. the oleic acid solutions of step S1. are warming up to 300 DEG C, the 1- octadecylenes solution of step S1. is then added and reacted
10min；Then 310 DEG C are warming up to, the tributyl phosphate solution of step S1. is added, 30min is reacted, is prepared after separating-purifying
Obtain CdxZn1-xSe@ZnS quantum dots.
Concentration commonly used in the art may be used in the Se concentration of the 1- octadecylene solution containing Se.It is described to contain S's
Concentration commonly used in the art may be used in the S concentration of tributyl phosphate solution.The addition of Se and S can be according to cadmium ion and zinc
The addition of ion is adjusted.
The above method belongs to the organic synthesis method in solvent-thermal method, and the quantum dot prepared in organic phase has higher
Fluorescence quantum yield, preferable monodispersity and stability, excellent in optical properties and size tunable.
The present invention is prepared not by changing reactant ratio, reaction temperature, reaction time quantum point grain size
With the Cd of excitation wavelengthxZn1-xSe@ZnS quantum dots, the study found that the Cd that the above method is preparedxZn1-xSe@ZnS quantum dots
Better performances.
Preferably, a concentration of 1mmol/mL of Se of the 1- octadecylene solution containing Se.
Preferably, the operation of separating-purifying is in step S2.：By adding ethyl alcohol by the Cd in reaction solutionxZn1-xSe@
ZnS quantum dot settles, and is then centrifuged for washing at least 5 times.
Preferably, the condition of the centrifuge washing is that 12000rpm centrifuges 10min.
Preferably, the silica gel is healthy and free from worry silica gel OE6550.
Preferably, the LED chip is blue-light LED chip.
Preferably, the LED chip is blue light gallium nitride based LED chip, and the blue light gallium nitride based LED chip includes folding successively
Substrate, n type gallium nitride layer, luminescent layer and the p-type gallium nitride layer of dress, the n type gallium nitride layer are equipped with N electrode, the p-type nitridation
Gallium layer is equipped with P electrode；The substrate is fixedly connected with the reflector.
Preferably, the substrate is sapphire substrate, silicon substrate, gallium nitride base board or aluminium nitride substrate.
Preferably, the shape of the reflector is wide at the top and narrow at the bottom round table-like.
Preferably, the reflector is made of metal material.
The present invention also protects the preparation method of above-mentioned white light LED part, the preparation method to include the following steps：It will
CdxZn1-xSe@ZnS quantum dots are mixed to get quantum dot light emitting material with silica gel, then cover quantum dot light emitting material obtained
Lid LED chip surface, after 100 DEG C are dried in vacuo 30min, be heating and curing 100min under the conditions of 150 DEG C, then assembling heat dissipation
Device, reflector and diffuser.
Compared with prior art, the beneficial effects of the invention are as follows：
The quantum dot light emitting colloid of white light LED part provided by the invention is by CdxZn1-xSe@ZnS quantum dots and silica gel mixing system
It is standby to form, CdxZn1-xThe high conversion efficiency of Se@ZnS quantum dots, energy loss are low；CdxZn1-xSe@ZnS quantum dots are prepared white
Light LED component has the advantages that photochromic more uniform, luminous efficiency height, stability are good, has fabulous application in lighting area
Foreground.
Description of the drawings
Fig. 1 is the Cd of embodiment 1xZn1-xThe structural schematic diagram of white light LED part prepared by Se@ZnS quantum dots.
Fig. 2 is the Cd of embodiment 1xZn1-xThe schematic diagram of the LED chip of white light LED part prepared by Se@ZnS quantum dots.
Specific implementation mode
The present invention is further illustrated With reference to embodiment.
Embodiment 1
（1）Prepare CdxZn1-xSe@ZnS quantum dots
S1. it is 1 by molar ratio:10 cadmium oxide and zinc acetate is incorporated in the three-neck flask of the oleic acid containing certain volume, same to fashionable dress
Spherical condensation tube need to be carried by setting, and degassing vacuumizes 40 minutes, while the Se powder of 2mmol is poured into the list containing 2ml 1- octadecylenes
In mouth flask, being heated to 100 DEG C makes Se powder be completely dissolved；
S2. reaction is heated to 150 DEG C under nitrogen protection, injects 1- octadecylenes, then device is evacuated again, so
Triple valve is opened afterwards, and high-purity Ar is filled with into device, complete anaerobic in making device interior repeatedly for three times and solvent；
S3. continue heating and temperature is risen to 300 DEG C, be rapidly injected the 1- octadecylene solution of the powder containing Se, reaction after ten minutes, waits for
Temperature rises to after 310 DEG C the TBP solution being slowly dropped into containing S, and reaction is quickly down to room temperature after 30 minutes；
S4. separating-purifying, by quantum dot obtained move into beaker in, be slowly continuously added into ethyl alcohol, when see have precipitation generate when
Ethyl alcohol is continuously added until precipitation does not regenerate；Will obtain containing precipitation solution move into 50mL centrifuge tubes in, 12000rmp from
Heart 10min obtains CdxZn1-xSe@ZnS quantum dot powder；Pure Cd can be obtained five times repeatedlyxZn1-xSe@ZnS quantum dots.
CdxZn1-xSe@ZnS quantum dots use solvent heat one kettle way, in conjunction with organic synthesis feature in solvent-thermal method, success
Synthesize CdxZn1-xSe@ZnS quantum dots, by changing reactant ratio, reaction temperature, reaction time quantum point grain size,
Make semiconductor-quantum-point conduction band valence band be easier to titanium dioxide conduction band valence band to match to form hierarchic structure promotion electron hole transmission,
The compound of electronics-hole pair is reduced, the photoelectric conversion efficiency of quantum spot white light LED device is improved.Quantum dot is partly led compared to body
Body material easy-regulating energy level makes level-density parameter between electron donor and receptor, greatly improves the photoelectric conversion efficiency of LED component.
CdxZn1-xSe@ZnS quantum dot fluorescence lifetimes are very long, therefore are advantageous to quick separating and the transmission of light induced electron.
（2）Prepare white light LED part
The Cd that will be obtainedxZn1-xSe@ZnS quantum dots disperse in DOW CORNING silica gel OE6550 to be mixed to get light conversion material again,
And quantum dot and silica gel mixing material are coated on 460nm blue gallium nitride based LED chips, it is then placed within 100 in vacuum drying oven
The 30min that anneals at DEG C is dried, and be heating and curing 100min at 150 DEG C, and assembling radiator, reflector and diffuser are final to make
It is standby to obtain white light LED part.CdxZn1-xSe@ZnS quantum dots are uniformly distributed in DOW CORNING silica gel OE6550 silica gel, obtained
Quantum dot light emitting colloid has cheap, nontoxic advantage.
The Cd of the present embodimentxZn1-xThe structure of white light LED part prepared by Se@ZnS quantum dots is as shown in Figure 1 and 2, including
LED chip 1, reflector 2, radiator 3 and diffuser 4, reflector 2 be upper end opening lower end closed shell, reflector 2 it is interior
Surface is reflective surface, and LED chip 1 is welded in the bottom of 2 inner surface of reflector, and the lower part of reflector 2 is connected with radiator
3, diffuser 4 and reflector 2 lid merges it is affixed, equipped with the quantum for covering LED chip 1 between diffuser 4 and LED chip 1
Point luminous colloid 5.
LED chip 1 includes the substrate 11 of closed assembly, n type gallium nitride layer 12, luminescent layer 13 and p-type gallium nitride layer 14, N successively
It is provided with N electrode 15 on type gallium nitride layer 12, P electrode 16 is provided on p-type gallium nitride layer 14, substrate 11 is welded with reflector 2
It connects.The LED chip 1 of transversary is formed, simple in structure, manufacture craft is ripe.Here, the substrate 11 can be process for sapphire-based
11, silicon substrate 11, gallium nitride base board 11 or aluminium nitride substrate 11.
The present embodiment is set up directly on distribution due to the quantum dot light emitting colloid 5 equipped with covering LED chip 1, LED chip 1
There is CdxZn1-xIn the casting glue of Se@ZnS quantum dots, the light that LED chip 1 is sent out excites CdxZn1-xSe@ZnS quantum dots, from
And entire quantum dot light emitting colloid is made to send out white light, compared to traditional knot of smearing or spot printing fluorescence coating in LED chip 1
Structure, photochromic more uniform, CdxZn1-xThe high conversion efficiency of Se@ZnS quantum dots, energy loss are few.Particularly, LED chips
1 is welded in reflector 2, and the light that LED chip 1 is sent out can be projected effectively, light emission rate after the reflection of 2 inner surface of reflector
Height, and the affixed radiator 3 in 2 lower part of reflector, the luminous heat generated of LED chips 1 are directly delivered to scattered by reflector 2
On hot device 3, radiating efficiency height extends the service life of LED chip 1.
The Cd of the present embodimentxZn1-xWhite light LED part prepared by Se@ZnS quantum dots has photochromic more uniform, luminous effect
The advantage that rate is high, stability is good has fabulous application prospect in lighting area.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
All any modification, equivalent and improvement etc., should be included in the claims in the present invention made by within the spirit and principle of invention
Protection domain within.
Claims (9)
1. a kind of CdxZn1-xWhite light LED part prepared by Se@ZnS quantum dots, which is characterized in that include equipped with the reflective of radiator
It covers, the LED chips that are set to the reflector inside bottom, the diffuser closed with the reflective the cover and described for covering
The quantum dot light emitting colloid on LED chip surface, the quantum dot light emitting colloid is by CdxZn1-xSe@ZnS quantum dots and silica gel mixing
It is prepared, the CdxZn1-xSe@ZnS quantum dots are by CdxZn1-xSe stratum nucleares and ZnS shells composition, the ZnS shell layer surfaces packet
It is wrapped with hydrophobic ligand, wherein x is more than 0 and is less than 1.
2. white light LED part according to claim 1, which is characterized in that the CdxZn1-xThe diameter of Se@ZnS quantum dots
For 2 ~ 10nm.
3. white light LED part according to claim 1, which is characterized in that the CdxZn1-xThe excitation of Se@ZnS quantum dots
Wavelength is 280 ~ 770nm.
4. white light LED part according to claim 1, which is characterized in that the CdxZn1-xSe@ZnS quantum dots are by as follows
Step is prepared：
S1. the oleic acid solutions containing cadmium ion and zinc ion are prepared；Prepare the 1- octadecylene solution containing Se；Preparation contains S's
Tributyl phosphate solution；The molar ratio of the cadmium ion and zinc ion is 1:10；Reaction system keeps oxygen-free environment；
S2. the oleic acid solutions of step S1. are warming up to 300 DEG C, the 1- octadecylenes solution of step S1. is then added and reacted
10min；Then 310 DEG C are warming up to, the tributyl phosphate solution of step S1. is added, 30min is reacted, is prepared after separating-purifying
Obtain CdxZn1-xSe@ZnS quantum dots.
5. white light LED part according to claim 4, which is characterized in that in step S2. the operation of separating-purifying be：It is logical
Addition ethyl alcohol is crossed by the Cd in reaction solutionxZn1-xSe@ZnS quantum dots settle, and are then centrifuged for washing at least 5 times.
6. white light LED part according to claim 1, which is characterized in that the LED chip is blue-light LED chip.
7. white light LED part according to claim 6, which is characterized in that the LED chip is blue light gallium nitride based LED core
Piece, the blue light gallium nitride based LED chip include the substrate of closed assembly, n type gallium nitride layer, luminescent layer and p-type gallium nitride layer successively, institute
It states n type gallium nitride layer and is equipped with N electrode, the p-type gallium nitride layer is equipped with P electrode；The substrate is fixedly connected with the reflector.
8. white light LED part according to claim 7, which is characterized in that the substrate be sapphire substrate, silicon substrate,
Gallium nitride base board or aluminium nitride substrate.
9. the preparation method of claim 1 ~ 8 any one of them white light LED part, which is characterized in that include the following steps：It will
CdxZn1-xSe@ZnS quantum dots are mixed to get quantum dot light emitting material with silica gel, then cover quantum dot light emitting material obtained
Lid LED chip surface, after 100 DEG C are dried in vacuo 30min, be heating and curing 100min under the conditions of 150 DEG C, then assembling heat dissipation
Device, reflector and diffuser.
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| CN110299459A (en) * | 2019-06-14 | 2019-10-01 | 上海大学 | White light LED part and preparation method thereof based on perovskite quantum dot and InP quantum dot |
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