CN108766890B - Method for preparing metal oxide thin film transistor at low temperature - Google Patents
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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Abstract
The invention provides a method for preparing a metal oxide thin film transistor at low temperatureMethod for preparing In at low temperature2O3In the course of the film, by NH3Plasma treatment of In after preannealing2O3The film realizes further reduction of the preparation temperature and realizes that In with good performance is prepared under the condition of atmospheric annealing at 130 ℃ for 4 hours2O3A film. The scheme of the invention has the advantages of low cost, simple process, good product performance, environment-friendly preparation environment, wide application prospect and the like. The compatibility of the TFT and the flexible substrate is greatly improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a method for preparing a metal oxide thin film transistor at a low temperature.
Background
Research on flexible display devices gradually draws attention from researchers at home and abroad. The flexible display device has high potential advantages, such as being light and thin, not easy to damage, bendable and the like. The mobile phone, the computer and the television become indispensable main parts in modern human life, and with the continuous upgrade of consumer experience, the demands on portable mobile equipment, wearable display products and the like are rapidly increased at present, so that the flexible display continuously receives wide attention in the industry. Reviewing the 2017SID display week, as an important component of the exhibition, flexible display and printing technologies showsthe direction of future display development: flexible, foldable, stretchable, blending touch. The world famous display device manufacturers (three stars, JDI, LG, Beijing east, Tianma and the like) show unique flexible display products in a dispute.
In order to achieve a better user experience, new types of flexible display devices are being developed towards transparent electronic devices. Transparent electronic devices require circuit transparency, and the key to implementing transparent circuits is the fabrication of transparent Thin Film Transistors (TFTs). Thin Film Transistors (TFTs) are mainly used in switching control elements in various displays or integrated elements of peripheral driver circuits. In the past decade, amorphous silicon TFTs and polysilicon TFTs have become key devices in the electronic flat panel display industry. However, amorphous silicon TFTs present some inherent physical obstacles: such as high photosensitivity, low field effect mobility, and opacity of the material, the application of the material in OLED pixel driving and LCD and OLED peripheral driving circuit integration is greatly limited; the polysilicon thin film transistor has high process temperature, high manufacturing cost and poor uniformity of transistor performance, and is not suitable for large-size flat panel display and flexible display. Therefore, in order to develop the transparent flexible display technology, the development of more advanced transparent thin film transistor technology is urgently required. Since IGZO-TFT which has high visible light transmittance, high field-effect mobility, good production uniformity and can be produced at low temperature was reported by the seikouxiong topic group of tokyo industrial university, japan in 2004, it has rapidly attracted much attention.
Through the development of the last ten years, the oxide TFT has a plurality of preparation methods such as direct current/magnetron sputtering, molecular beam epitaxy, laser pulse deposition, solution method and the like. With the development of thin film transistors, research groups focus on improving device performance, and development of low-cost, low-temperature, simple, nontoxic, and easy-to-fabricate large-area preparation methods is gradually emphasized by the research groups in combination with the demand of industrialization. The comparative research of various preparation methods shows that the water-induced solution method has the characteristics of low equipment dependence of the solution method, simple operation, easy control of the synthesis process of the film through chemical properties, realization of large-area preparation, realization of nanoscale uniform preparation and the like. Because water is used as a solvent instead of common organic solvents such as alcohol ether and the like, the preparation process of the water quality method is healthy, safe and environment-friendly. Because the water quality method does not contain organic substances, the preparation of the film can be realized at a lower temperature, even In is prepared at the temperature as low as 200 DEG C2O3-a TFT. Since the common plastic substrate (such as PI) usually has a temperature resistance lower than 200 ℃, even for the newly developed high-temperature resistant plastic substrate, due to the difference of the thermal expansion coefficients between the plastic substrate and the semiconductor film, the closer the temperature of the device to the room temperature, the better the device is, the better the temperature potential of the oxide film is further reducedThe method is carried out as necessary.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for preparing a metal oxide thin film transistor at a low temperature, characterized In that the method prepares In at a low temperature2O3In the course of the film, by NH3Plasma treatment of In after preannealing2O3The film realizes further reduction of preparation temperature, and then In with good performance is prepared under the condition of atmospheric annealing at 130 ℃ for 4 hours2O3A thin film transistor;
further, the method comprises the steps of:
1): preparation of In2O3A precursor solution of a base or ZnO-based oxide;
2): cleaning and surface activating the substrate;
3): preparing an oxide film;
4): by NH3Plasma treating the pre-cured oxide film;
5): reacting NH in the step 4)3Annealing the film treated by the plasma in an atmosphere annealing device at the annealing temperature of 100-250 ℃ for 0.5-8 hours;
6): reacting NH in step 5)3Preparing a source electrode and a drain electrode on the film subjected to the plasma treatment by adopting a thermal evaporation or magnetron sputtering mode, thereby realizing the preparation of a metal oxide thin film transistor;
further, the precursor solution in the step 1) comprises a water-quality low-temperature precursor solution, a combustion low-temperature precursor solution, a redox precursor solution and an organic solvent precursor solution, and the precursor for preparing the precursor solution comprises metal nitrate, metal chloride, metal fluoride and organic metal salt;
further, the precursor solution In the step 1) comprises In doping2O3Or a binary oxide precursor solution of ZnO, In-doped2O3Or ternary oxide precursor solution of ZnO, doped In2O3Or a quaternary oxide precursor solution of ZnO and In-doped2O3Or a precursor solution of multiple oxides of ZnO, and then preparing the productTo the corresponding oxide film;
further, the step 1) is specifically that the precursor is dissolved in deionized water or ammonia water, and the mixture is magnetically stirred for 0.5 to 24 hours at the temperature of between 0 and 100 ℃ to form clear and transparent precursor liquid, wherein the concentration of the precursor liquid is between 0.01 and 0.5 mol/L;
further, the solvent used in the water quality method is deionized water, high-purity water, ammonia water or hydrogen peroxide;
further, the step 2) comprises:
2-1): ultrasonically cleaning the cut substrate with deionized water, acetone, isopropanol and deionized water in an ultrasonic cleaning machine for 5-30min respectively, and blow-drying with nitrogen;
2-2): putting the cleaned substrate into a plasma cleaning chamber, and heating at 20-100 deg.C in the presence of oxygen2Treating in plasma for 1-30min to activate the surface of the substrate and improve the surface wettability;
further, the substrate in the step 2) comprises glass, a silicon wafer, a thermal oxidation silicon wafer and a plastic substrate;
further, the step 3) is specifically to adopt a preparation technology of spin coating, bar coating, drawing, drop coating or ink jet printing technology, and prepare a wet film on the substrate subjected to the surface treatment in the step 2) by using the precursor solution obtained in the step 1); pre-annealing in the atmosphere at 50-150 deg.C for 1-30min to obtain pre-cured oxide film;
further, the plasma treatment process in the step 4) is to adopt NH3As a gas source, the power is 1-100W, the temperature is 25-250 ℃, the processing time is 1-40min, and the introduction amount of the working gas is 10-200 sccm;
further, the gas source NH in the plasma treatment process in the step 4)3Gas, can adopt H2And N2By replacement of a combined gas source of H2And N2Sequentially performing plasma treatment or H2And N2Simultaneously carrying out plasma cleaning;
further, the step 6) is specifically to prepare an electrode material with a thickness of 20-200nm as a source electrode and a drain electrode, wherein the width-length ratio of the channel region is 1-20, and the thin film transistor with good performance is prepared under the condition of 100-
Further, the electrode material comprises Al, Au, Ag, Cu, Ni, Mo, ITO and AZO, and the thin film transistor comprises a bottom gate top contact, a bottom gate bottom contact, a top gate top contact and a top gate bottom contact;
the invention has the following beneficial effects:
1): by NH3The oxide film after plasma treatment and pre-annealing can obviously reduce the heat treatment temperature of the film, and can realize low-temperature preparation of the metal oxide film;
2): in is formed by2O3For example, based on a solution method, the preparation at a low temperature of below 180 ℃ is realized, and annealing for more than 1 hour is often required by means of a special annealing device such as a rapid annealing furnace or a vacuum annealing furnace, and compared with the above, the preparation cost is reduced to a certain extent in the preparation process at a low temperature of below 180 ℃;
3): due to NH2 -，NH2-，N3-The existence of plasma and active groups plays a certain self-passivation role on the surface of the film, thereby being beneficial to improving the stability of the device;
4): on the premise of ensuring the electrical property of the transistor, the low-temperature preparation of the TFT is further realized, so that the influence of the preparation process on the flexible substrate is reduced;
5) the method has the advantages of low cost, simple process, good product performance, environment-friendly preparation environment, wide application prospect and the like, and greatly improves the compatibility of the TFT and the flexible substrate.
Drawings
FIG. 1 is O2Carrying out plasma treatment on the cleaned p-doped thermal oxidation silicon wafer substrate;
FIG. 2 is a schematic illustration of an active layer after pre-annealing using a heating disk;
FIG. 3 is NH3Plasma treating the pre-cured active layer schematic;
FIG. 4 is a schematic view of an oxide active layer after annealing;
FIG. 5 is a schematic diagram of generating source and drain electrodes;
FIG. 6 shows NH at a preparation temperature of 150 deg.C3Plasma treated active layer TFT at different VDSSchematic diagram of transfer characteristics;
FIG. 7 shows the presence or absence of NH at a preparation temperature of 150 ℃3Schematic diagram of TFT transfer characteristics of plasma treated active layer;
FIG. 8 shows the presence or absence of NH at a preparation temperature of 130 ℃3Schematic diagram of TFT transfer characteristics of plasma treated active layer;
in the figure, 1 is p++-Si; 2 is 100nm thick SiO2(ii) a 3a is In after preannealing2O3A film; 3b is In after post annealing2O3A film; 4a and 4b are Al source and drain electrodes; 5 is O2Carrying out plasma treatment; 6 is NH3And (4) carrying out plasma treatment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. On the contrary, the invention is intended to cover alternatives, modifications, equivalents and alternatives which may be included within the spirit and scope of the invention as defined by the appended claims. Furthermore, in the following detailed description of the present invention, certain specific details are set forth in order to provide a better understanding of the present invention. It will be apparent to one skilled in the art that the present invention may be practiced without these specific details.
The invention is further described with reference to the following figures and specific examples, which are not intended to be limiting. The following are preferred examples of the present invention:
as shown in fig. 1 to 7, the present invention provides a method for preparing a metal oxide thin film transistor at a low temperature, and the present invention is a method for preparing a metal oxide thin film transistor at a low temperature based on a solution method, so as to further realize the low temperature preparation of a TFT on the premise of ensuring the electrical properties of the transistor, thereby reducing the influence of the preparation process on a flexible substrate. The method comprises the following steps:
(1)、In2O3preparation of base or ZnO-based oxide precursor solution: in is used here2O3For example, indium nitrate is dissolved In deionized water or aqueous solvent such as ammonia water, and the mixture is magnetically stirred at 0-100 deg.C for 0.5-24 hr to obtain clear and transparent In2O3Precursor solution of In2O3The concentration of the precursor solution is 0.01-0.5 mol/L;
(2) substrate cleaning and surface activation: the substrate can be used in a variety of common substrate forms including glass, silicon wafer, thermally oxidized silicon wafer, plastic substrate, and the like. Taking a thermal oxidation silicon substrate as an example, the cut thermal oxidation silicon substrate is subjected to ultrasonic cleaning for 5-30min respectively by using deionized water, acetone, isopropanol and deionized water in an ultrasonic cleaning machine in sequence, and then is dried by using nitrogen; putting the cleaned thermal oxide silicon wafer into a plasma cleaning chamber, and heating at 20-100 deg.C under O2Treating in plasma for 1-30min to activate the surface of the substrate and improve the surface wettability;
(3) and preparing an oxide film: preparing a wet film on the thermally oxidized silicon wafer subjected to the surface treatment in the step (2) by using the precursor solution obtained in the step (1) by adopting a conventional solution preparation technology such as spin coating, bar coating, pulling, drop coating or ink-jet printing technology; pre-annealing at 50-150 deg.C for 1-30min in air. Obtaining a pre-cured oxide film;
(4) by NH3Plasma treating the pre-cured oxide film.
(5) The plasma treatment process mentioned in (4) above employs NH3The power of the gas source is 1-100W, the temperature is 25-250 ℃, the processing time is 1-40min, and the introduction amount of the working gas is 10-200 sccm.
(6) Reacting NH in the above (4)3The film after the plasma treatment is placed in a common atmospheric annealing device such as a heating plate, a muffle furnace, a box furnace and the like and is annealed for 0.5 to 8 hours at the annealing temperature of 100 ℃ and 250 ℃.
(7) And preparing electrodes with the thickness of 20-200nm on the oxide film by adopting thermal evaporation or magnetron sputtering and other electrode preparation modes, such as Al, Au, Ag, Cu, Ni, Mo, ITO, AZO and other transparent electrode materials, and taking the electrodes as source electrodes and drain electrodes. Wherein the channel region width to length ratio is 1-20. And preparing a bottom gate top contact type thin film transistor.
(8) NH according to the above (4) and (5)3The method for reducing the preparation temperature by processing the surface of the film by the plasma is not only suitable for the film transistor with bottom gate top contact, but also suitable for the film transistors with bottom gate bottom contact, top gate top contact and top gate bottom contact.
The precursor liquid can be water-quality low-temperature precursor liquid, combustion low-temperature precursor liquid, oxidation-reduction precursor liquid, or common organic solvent precursor liquid, and the precursor liquid comprises In2O3And a binary oxide precursor such as ZnO, each element (e.g., alkali metal, alkaline earth metal, Al, Hf, Ga, Zn, etc.) is doped with In2O3Or ternary oxide precursor solution such as ZnO, quaternary oxide precursor solution such as InZnO or ZTO doped with various elements (such as alkali metal, alkaline earth metal, Al, Hf, Ga, etc.), and In co-doped with other elements (such as alkali metal, alkaline earth metal, Al, Hf, Ga, etc.)2O3Or a precursor solution of a multi-component oxide such as ZnO. The precursor may be metal nitrate, metal chloride, metal fluoride, organic metal salt, etc.
The principle of the invention is as follows:
NH3decomposition into radicals in the plasma state:
NH3→NH2 -+H·
NH2 -→NH2-+H·
NH2-→N3-+H·
because the ionic radius of H is extremely small, H is easy to permeate into the oxide film in the plasma treatment process, so that oxygen vacancies are filled, defects are filled, and the carrier concentration is increased; n cannot deeply penetrate into the oxide film because of larger ionic radius, but NH2 -，NH2-，N3-The active ions in the metastable state react with the unsaturated bond on the surface of the oxide film, thereby realizing thinnessThe self-passivation of the film surface improves the stability of the device to a certain extent. On the premise of ensuring the electrical property of the transistor, the preparation temperature of the oxide film is further reduced. In view of the above principles, the present invention relates to H2Plasma and N2The sequential plasma treatment realizes a method for further reducing the preparation temperature of the oxide film. By NH3The oxide film after plasma treatment and pre-annealing can obviously reduce the heat treatment temperature of the film, and can realize low-temperature preparation of metal oxide. In is formed by2O3For example, a thin film is prepared at a low temperature of 180 ℃ or lower by a solution method, and annealing for 1 hour or more is often required by a special annealing device such as a rapid annealing furnace or a vacuum annealing furnace, whereas the preparation cost is reduced to a certain extent in the process of preparing at a low temperature of 180 ℃ or lower. And furthermore due to NH2 -， NH2-，N3-The existence of plasma and active groups plays a certain self-passivation role on the surface of the film, thereby being beneficial to improving the stability of the device.
Example 1:
the substrate in this example was a commercially available single-side polished p-doped thermal silicon oxide cell with a thickness of 100 nm. Indium nitrate powder was purchased from Alfa corporation. The preparation process comprises the following steps:
step 1: preparation of In2O3Dissolving indium nitrate into deionized water according to the concentration of 0.2mol/L, and stirring for 6 hours at room temperature on a magnetic stirring table to obtain colorless and transparent In2O3Standing the precursor solution for later use; filtering the precursor solution with 0.22 μ L water-based filter head before use to remove insoluble impurities;
step 2: cleaning a substrate: ultrasonically cleaning the cut thermal oxide silicon wafer in an ultrasonic cleaning machine for 10min by using deionized water, acetone, isopropanol and deionized water in sequence, and drying by using nitrogen;
and step 3: as shown in fig. 1, substrate surface activation: putting the cleaned thermal oxidation silicon wafer into a plasma cleaning cavity, and carrying out O treatment at normal temperature2Treating in plasma for 10min to activate the surface of the substrateThe surface wettability is improved;
and 4, step 4: using In obtained In step 12O3The precursor solution is coated on the thermal silicon oxide wafer with the surface treated in the step 3 in a rotating mode; and pre-annealing the wet film obtained after the spin coating at 120 ℃ for 10min in the atmosphere on a heating plate. Obtaining a pre-cured oxide film as shown in FIG. 2;
and 5: as shown in FIG. 3, the oxide thin film obtained in step 4 was subjected to NH at 150 ℃3Plasma treatment for 10min, controlling the plasma treatment power to be 50W, NH during work3The gas flux of (2) is 100 sccm;
step 6: annealing the sample obtained In step 5 on a heating plate at 150 ℃ for 4 hours In the air to obtain In as shown In FIG. 42O3A film;
and 7: by thermal evaporation In2O3And preparing metal Al with the thickness of 100nm on the film as a source electrode and a drain electrode by adopting a mask. Wherein the channel region width to length ratio is 1000/100 μm. Thus obtaining p as shown in FIG. 5++-Si/SiO2(100nm)/In2O3A thin film transistor of a bottom-gate top-contact type of an/Al structure.
And 8: for the prepared In2O3TFTs at V, respectivelyDS10V and VDSThe transfer characteristics of the I-V test were as shown in fig. 6, with 20V.
Example 2:
in contrast to example 1, after carrying out Steps 1 to 4, NH of step 5 was discarded3And (6) performing a plasma treatment process directly in the step 6-8. Example 2 comparison of example 1 with In after preannealing2O3Film in the presence or absence of NH3The effect on the electrical properties of its TFT under the conditions of the plasma treatment process is shown in fig. 7.
Example 3:
step 1: preparation of In2O3Dissolving indium nitrate into deionized water according to the concentration of 0.2mol/L, and stirring for 6 hours at room temperature on a magnetic stirring table to obtain colorless and transparent In2O3Standing the precursor solution for later use; filtering the precursor solution with 0.22 μ L water-based filter head before use to remove insoluble impurities;
step 2: cleaning a substrate: ultrasonically cleaning the cut thermal oxide silicon wafer in an ultrasonic cleaning machine for 10min by using deionized water, acetone, isopropanol and deionized water in sequence, and drying by using nitrogen;
and step 3: as shown in fig. 1, substrate surface activation: putting the cleaned thermal oxidation silicon wafer into a plasma cleaning cavity, and carrying out O treatment at normal temperature2Treating in plasma for 10min to activate the surface of the substrate and improve the surface wettability;
and 4, step 4: using In obtained In step 12O3The precursor solution is coated on the thermal silicon oxide wafer with the surface treated in the step 3 in a rotating mode; and pre-annealing the wet film obtained after the spin coating at 80 ℃ for 10min in the atmosphere on a heating plate. Obtaining a pre-cured oxide film as shown in FIG. 2;
and 5: as shown in FIG. 3, the oxide thin film obtained in step 4 was subjected to NH at 130 deg.C3Plasma treatment for 10min, controlling the plasma treatment power to be 50W, NH during work3The gas flux of (2) is 100 sccm;
step 6: annealing the sample obtained In step 5 on a heating plate at 130 ℃ for 4 hours In the air to obtain In as shown In FIG. 42O3A film;
and 7: by thermal evaporation In2O3And preparing metal Al with the thickness of 100nm on the film as a source electrode and a drain electrode by adopting a mask. Wherein the channel region width to length ratio is 1000/100 μm. Thus obtaining p as shown in FIG. 5++-Si/SiO2(100nm)/In2O3A thin film transistor of a bottom-gate top-contact type of an/Al structure.
And 8: for the prepared In2O3TFTs at V, respectivelyDSThe transfer characteristics of the I-V test were as shown in fig. 8, with 10V.
Example 4:
in contrast to example 3, after carrying out Steps 1 to 4, NH of step 5 was discarded3Plasma treatment processDirectly carrying out the steps 6-8. Example 4 comparison of example 3 with In after preannealing2O3Film in the presence or absence of NH3The effect on the electrical properties of its TFT under the conditions of the plasma treatment process is shown in fig. 8.
The above-described embodiment is only one of the preferred embodiments of the present invention, and general changes and substitutions by those skilled in the art within the technical scope of the present invention are included in the protection scope of the present invention.
Claims (8)
1. A method for preparing a metal oxide thin film transistor at low temperature is characterized by comprising the following steps:
1): preparation of In2O3A precursor solution of a base or ZnO-based oxide;
2): cleaning and surface activating the substrate;
3): preparing an oxide film;
4): by NH3Plasma treating the pre-cured oxide film;
5): reacting NH in the step 4)3Annealing the film treated by the plasma in an atmosphere annealing device at the annealing temperature of 100-250 ℃ for 0.5-8 hours;
6): reacting NH in step 5)3And preparing a source electrode and a drain electrode of the film subjected to the plasma treatment by adopting a thermal evaporation or magnetron sputtering mode, thereby realizing the preparation of the metal oxide thin film transistor.
2. The method according to claim 1, wherein the precursor solution in step 1) comprises a water-induced low-temperature precursor solution, a combustion low-temperature precursor solution, a redox precursor solution and an organic solvent precursor solution, and the precursors for preparing the precursor solution comprise metal nitrate, metal chloride, metal fluoride and organic metal salt.
3. The method of claim 1, wherein the precursor solution In step 1) comprises In doping2O3Or ZnOThe binary oxide precursor solution and In-doped2O3Or ternary oxide precursor solution of ZnO, doped In2O3Or a quaternary oxide precursor solution of ZnO and In-doped2O3Or multi-element oxide precursor solution of ZnO, and then preparing the corresponding oxide film.
4. The method as claimed in claim 2, wherein the step 1) is specifically to dissolve the precursor in deionized water or ammonia water, and magnetically stir at 0-100 ℃ for 0.5-24 hours to form a clear and transparent precursor solution, wherein the concentration of the precursor solution is 0.01-0.5mol/L, and the solvent used in the water-induced method is deionized water, high purity water, ammonia water or hydrogen peroxide.
5. The method of claim 2, wherein the step 2) comprises:
2-1): ultrasonically cleaning the cut substrate with deionized water, acetone, isopropanol and deionized water in an ultrasonic cleaning machine for 5-30min respectively, and blow-drying with nitrogen;
2-2): putting the cleaned substrate into a plasma cleaning chamber, and heating at 20-100 deg.C in the presence of oxygen2Treating in plasma for 1-30min to activate the surface of the substrate and improve the surface wettability.
6. The method according to claim 2, wherein step 3) is a preparation technique using spin coating, bar coating, drawing, drop coating or ink jet printing technology, and a wet film is prepared on the substrate surface-treated in step 2) by using the precursor solution obtained in step 1); pre-annealing for 1-30min at 50-150 deg.C on a heating plate in atmosphere to obtain pre-cured oxide film.
7. The method as claimed in claim 2, wherein the plasma treatment process in step 4) is NH3As gas source, the power is 1-100W, the temperature is 25-250 deg.C, the treatment time is 1-40min, and the introduction amount of working gas is 10-200sccm, wherein the treatment process is performed in plasma treatmentThe gas source is NH3Gas or with H2And N2When the combined gas source is adopted, the H is converted into the hydrogen2And N2Sequentially performing plasma treatment or H2And N2Plasma cleaning is performed simultaneously.
8. The method as claimed in claim 2, wherein the step 6) is specifically to prepare an electrode material with a thickness of 20-200nm as a source/drain electrode, wherein the width-to-length ratio of a channel region is 1-20, and a thin film transistor with good performance is prepared at the temperature of 100 ℃ and 250 ℃, wherein the source/drain electrode material comprises Al, Au, Ag, Cu, Ni, Mo, ITO and AZO, the thin film transistor comprises a bottom gate top contact, a bottom gate bottom contact, a top gate top contact and a top gate bottom contact, and the substrate in the step 2) comprises glass, a silicon wafer, a thermally oxidized silicon wafer and a plastic substrate.
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