CN108764087B - Electronic device, ultrasonic fingerprint identification device and manufacturing method thereof - Google Patents
Electronic device, ultrasonic fingerprint identification device and manufacturing method thereof Download PDFInfo
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- CN108764087B CN108764087B CN201810477851.3A CN201810477851A CN108764087B CN 108764087 B CN108764087 B CN 108764087B CN 201810477851 A CN201810477851 A CN 201810477851A CN 108764087 B CN108764087 B CN 108764087B
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- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
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- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
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Abstract
The embodiment of the application provides electronic equipment, an ultrasonic fingerprint identification device and a manufacturing method thereof, wherein the method comprises the following steps: forming a signal processor based on a CMOS process; forming an insulating layer on an upper surface of the signal processor; and forming a piezoelectric transducer on the insulating layer based on the MEMS process, and electrically connecting the piezoelectric transducer with the signal processor. The manufacturing cost of the ultrasonic fingerprint identification device can be saved.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to an electronic device, an ultrasonic fingerprint identification apparatus, and a manufacturing method thereof.
Background
At present, fingerprint identification technology has become one of the hot spots in the field of biometric identification, and is widely applied to electronic devices such as mobile terminals.
Among them, the ultrasonic fingerprint recognition technology has become one of the main fingerprint recognition technologies due to its advantages. The identification unit used by the ultrasonic fingerprint identification technology is a piezoelectric ultrasonic transducer. The transducer area of the piezoelectric ultrasonic transducer is a film structure composed of a bottom electrode, a piezoelectric material, a top electrode and an elastic layer. By utilizing the inverse piezoelectric effect of the piezoelectric material, the film vibrates to generate sound waves as long as the voltage with fixed frequency is applied to the bottom electrode and the top electrode on the upper surface and the lower surface of the piezoelectric material film. The sound waves are transmitted to the medium and meet valleys and ridges of the finger, sound wave signals with different amplitudes, phases or frequencies can be reflected due to the difference of acoustic impedances of the valleys and the ridges, the reflected different sound waves are transmitted to the surface of the film, so that the piezoelectric material generates different vibrations, and voltages with different amplitudes, phases or frequencies can be generated at two ends of the piezoelectric material, so that the fingerprint information can be acquired.
Although the ultrasonic fingerprint identification has better penetrating power and higher safety in principle, compared with the current mature capacitive fingerprint identification technology, the manufacturing process of the ultrasonic fingerprint identification device is complex and the cost is higher, so that the large-scale mass production of the ultrasonic fingerprint identification device is restricted. Specifically, the current ultrasonic fingerprint identification manufacturing process is mainly divided into three parts: the fabrication of a signal processor implemented based on a CMOS (Complementary Metal Oxide Semiconductor) process, the fabrication of a piezoelectric transducer chip implemented based on a MEMS (Micro-Electro-Mechanical System) process, and the integration of the signal processor and the piezoelectric transducer chip through a wafer bonding process, etc., wherein the fabrication of the piezoelectric transducer chip and the wafer bonding process occupy most of the cost.
Disclosure of Invention
An object of the embodiments of the present application is to provide an electronic device, an ultrasonic fingerprint identification device and a manufacturing method thereof, so as to reduce the manufacturing cost of the ultrasonic fingerprint identification device.
In order to achieve the above object, in one aspect, an embodiment of the present application provides a method for manufacturing an ultrasonic fingerprint identification device, including:
forming a signal processor based on a CMOS process;
forming an insulating layer on an upper surface of the signal processor;
and forming a piezoelectric transducer on the insulating layer based on the MEMS process, and electrically connecting the piezoelectric transducer with the signal processor.
Preferably, forming an insulating layer on an upper surface of the signal processor includes:
depositing an insulating layer on the passivation layer of the signal processor based on a deposition process.
Preferably, the forming a piezoelectric transducer on the insulating layer based on the MEMS process and electrically connecting the piezoelectric transducer with the signal processor include:
a cavity of the piezoelectric transducer is formed in the insulating layer;
filling the cavity with a sacrificial material;
forming a bottom electrode and a bottom electrode connecting part of the piezoelectric transducer on the insulating layer; the bottom electrode corresponds to the cavity, and the bottom electrode connecting part corresponds to the first contact point of the signal processor;
forming a piezoelectric layer on the bottom electrode;
forming a top electrode and a top electrode connecting part of the piezoelectric transducer on the piezoelectric layer; the top electrode is matched and corresponds to the bottom electrode, and the top electrode connecting part corresponds to the second contact point position of the signal processor;
a first connecting hole is formed between the bottom electrode connecting part and the first contact point, and a second connecting hole is formed between the top electrode connecting part and the second contact point;
forming a first contact electrode in the first connection hole for electrically connecting the bottom electrode connection part and the first contact point; forming a second contact electrode in the second connection hole for electrically connecting the top electrode connection part and the second contact point;
opening at least one release hole on the piezoelectric layer, and removing the sacrificial material in the cavity through the release hole; the release hole is positioned at the outer periphery of the top electrode and corresponds to the position of the cavity;
forming a sealing layer on the piezoelectric layer, the sealing layer sealing the release hole, the piezoelectric layer, the top electrode, the first contact electrode, and the second contact electrode.
Preferably, the opening of the cavity of the piezoelectric transducer on the insulating layer includes:
and etching the cavity of the piezoelectric transducer in the middle of the insulating layer based on an etching process.
Preferably, after filling the cavity with the sacrificial material, the method further comprises:
adjusting an upper surface of the sacrificial material to be flush with an upper surface of the insulating layer based on a planarization process.
Preferably, the forming of the bottom electrode and the bottom electrode connecting portion of the piezoelectric transducer on the insulating layer includes:
depositing a first metal layer on the insulating layer based on a deposition process;
and patterning the first metal layer to form a bottom electrode of the piezoelectric transducer and a bottom electrode connecting part.
Preferably, the forming a piezoelectric layer on the bottom electrode includes:
depositing a piezoelectric material on the insulating layer based on a deposition process to form a piezoelectric layer on the bottom electrode.
Preferably, the forming of the top electrode and the top electrode connecting portion of the piezoelectric transducer on the piezoelectric layer includes:
depositing a second metal layer on the piezoelectric layer based on a deposition process;
and patterning the second metal layer to form a top electrode of the piezoelectric transducer and a top electrode connecting part.
Preferably, the opening of the first connection hole between the bottom electrode connection portion and the first contact point includes:
and etching the piezoelectric layer, the bottom electrode connecting part, the insulating layer and the passivation layer of the signal processor layer by layer from top to bottom based on an etching process so as to form a first connecting hole between the bottom electrode connecting part and the first contact point.
Preferably, the opening of the second connection hole between the top electrode connection portion and the second contact point includes:
and etching the top electrode connecting part, the piezoelectric layer, the insulating layer and the passivation layer of the signal processor layer by layer from top to bottom based on an etching process so as to form a second connecting hole between the top electrode connecting part and the second contact point.
Preferably, the forming of the first contact electrode in the first connection hole and the simultaneously forming of the second contact electrode in the second connection hole include:
depositing a third metal layer in the first connecting hole and the second connecting hole based on a deposition process and imaging so as to respectively and correspondingly form a first contact electrode and a second contact electrode in the first connecting hole and the second connecting hole.
Preferably, the opening of the at least one release hole in the piezoelectric layer includes:
and etching the piezoelectric layer based on an etching process so as to open at least one release hole on the piezoelectric layer.
Preferably, the diameter of the release hole is less than 2 microns.
Preferably, the removing the sacrificial material in the cavity through the release hole includes:
removing the sacrificial material in the cavity through the release holes and based on an etching process.
Preferably, the forming a sealing layer on the piezoelectric layer includes:
depositing a sealing material on the piezoelectric layer based on a deposition process to form a sealing layer on the piezoelectric layer.
On the other hand, the embodiment of the application also provides the ultrasonic fingerprint identification device manufactured by the method.
On the other hand, the embodiment of the application also provides electronic equipment provided with the ultrasonic fingerprint identification device.
As can be seen from the technical solutions provided in the embodiments of the present application, the piezoelectric transducer in the embodiments of the present application is directly manufactured on the surface of the signal processor based on the MEMS process. Therefore, when the ultrasonic fingerprint identification device is manufactured, an integrated process of wafer bonding is not needed between the piezoelectric transducer and the signal processor, and the manufacturing cost of the ultrasonic fingerprint identification device is greatly saved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without any creative effort. In the drawings:
FIG. 1 is a flow chart illustrating a method for manufacturing an ultrasonic fingerprint identification device according to an embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of a signal processor fabricated based on a CMOS process according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view illustrating an embodiment of an insulating layer formed on an upper surface of a signal processor;
FIG. 4 is a schematic cross-sectional view illustrating a structure of an embodiment of the present application after forming a cavity of a piezoelectric transducer on an insulating layer;
FIG. 5 is a schematic cross-sectional view of a structure after filling a cavity with a sacrificial material in an embodiment of the present application;
FIG. 6 is a cross-sectional view of the structure after forming the bottom electrode and the bottom electrode connecting portion of the piezoelectric transducer on the insulating layer according to an embodiment of the present application;
FIG. 7 is a cross-sectional view of an embodiment of a piezoelectric layer formed on a bottom electrode;
FIG. 8 is a cross-sectional view of an embodiment of a piezoelectric transducer with top electrodes and top electrode connections formed on a piezoelectric layer;
FIG. 9 is a cross-sectional view of an embodiment of the present disclosure after forming a first via hole between the bottom electrode connection portion and the first contact, and forming a second via hole between the top electrode connection portion and the second contact;
fig. 10 is a schematic cross-sectional view illustrating a structure after a first contact electrode is formed in a first connection hole and a second contact electrode is formed in a second connection hole according to an embodiment of the present disclosure;
fig. 11 is a schematic cross-sectional view illustrating a structure of an embodiment of the present application after release holes are formed in a piezoelectric layer and a sacrificial material in a cavity is removed through the release holes;
fig. 12 is a schematic cross-sectional view illustrating a structure after a sealing layer is formed on a piezoelectric layer according to an embodiment of the present application;
fig. 13 is a schematic structural diagram of an electronic device in an embodiment of the present application.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. For example, in the following description, forming the second component over the first component may include embodiments in which the first and second components are formed in direct contact, embodiments in which the first and second components are formed in non-direct contact (i.e., additional components may be included between the first and second components), and so on.
Also, for ease of description, some embodiments of the present application may use spatially relative terms such as "above …," "below …," "top," "below," etc., to describe the relationship of one element or component to another (or other) element or component as illustrated in the various figures of the embodiments. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or components described as "below" or "beneath" other elements or components would then be oriented "above" or "over" the other elements or components.
Referring to fig. 1, a method for manufacturing an ultrasonic fingerprint recognition apparatus according to an embodiment of the present application may include the steps of:
and S101, forming a signal processor based on a CMOS process.
In some embodiments of the present application, as shown in fig. 2, a signal processor manufactured based on a CMOS process may include a CMOS chip 1 and a passivation layer 11 covering an upper surface of the CMOS chip 1. The CMOS chip 1 may have two contact points: a first contact point 12 and a first contact point 13. In some exemplary embodiments, the contact point may be, for example, a contact pad or the like.
In some embodiments of the present application, after the passivation layer 11 is formed on the upper surface of the CMOS chip 1, the upper surface of the passivation layer 11 may be further polished based on a planarization process. The planarization process may include, but is not limited to, CMP (Chemical Mechanical Polishing), and the like. In addition, the planarization process mentioned below may refer to the description of this section, and is not repeated.
And S102, forming an insulating layer on the upper surface of the signal processor.
In some embodiments of the present application, the insulating layer may serve as a substrate for fabricating the piezoelectric transducer on the signal processor and may further protect the signal processor.
In some embodiments of the present application, a material of the insulating layer may be, for example, an elemental semiconductor material such as monocrystalline silicon, polycrystalline silicon, or silicon or germanium with an amorphous structure. In other embodiments of the present invention, the material of the insulating layer may also be a compound semiconductor material such as silicon carbide, gallium arsenide, gallium phosphide, indium arsenide, or the like, and in other embodiments of the present invention, the material of the insulating layer may also be an alloy semiconductor material such as SiGe or GaAsP, or the like.
In some embodiments of the present application, as shown in fig. 3, an insulating layer 201 may be deposited on the passivation layer 11 of the signal processor (i.e., the CMOS chip 1 in fig. 3) based on a deposition process. The Deposition process may be, for example, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), or the like. In other embodiments of the present application, the insulating layer 201 may also be formed on the passivation layer 11 of the signal processor based on an epitaxial growth process. The epitaxial growth process may be, for example, VPE (vapor Phase Epitaxy), LPE (Liquid Phase Epitaxy), SPE (Solid Phase Epitaxy), MBE (Molecular beam Epitaxy), or the like. In addition, the deposition process mentioned below may refer to the description of this section, and is not repeated.
S103, forming a piezoelectric transducer on the insulating layer based on the MEMS process, and electrically connecting the piezoelectric transducer with the signal processor.
In some embodiments of the present application, since the piezoelectric transducer is directly manufactured on the surface of the signal processor based on the MEMS process, the manufacturing of the ultrasonic fingerprint identification device of the embodiments of the present application does not require an integrated process such as wafer bonding, thereby greatly saving the manufacturing cost of the ultrasonic fingerprint identification device.
For the purpose of understanding the present application, a manufacturing process for forming a piezoelectric transducer on an insulating layer based on a MEMS process will be described in detail below with reference to the accompanying drawings.
In some embodiments of the present application, the forming a piezoelectric transducer on the insulating layer based on the MEMS process and electrically connecting the piezoelectric transducer with the signal processor may include:
1) and a cavity of the piezoelectric transducer is formed in the insulating layer.
In some embodiments of the present application, as shown in fig. 4, a cavity 202 of the piezoelectric transducer may be etched in the middle of the insulating layer 201 based on an etching process, and the cavity 202 serves as a resonant cavity of the piezoelectric transducer. The size, shape and dimensions of the cavity 202 may be determined as desired. The etching process may be any suitable wet etching or dry etching process, such as photolithography, X-ray etching, electron beam etching, or ion beam etching. In addition, the following etching process and patterning may refer to the description of this section, and are not repeated.
2) Filling the cavity with a sacrificial material.
In some embodiments of the present application, the cavity 202 may be filled with a sacrificial material 203 based on a deposition process to facilitate subsequent processing, as shown in fig. 5. In other embodiments of the present application, after filling the cavity 202 with the sacrificial material 203, the upper surface of the sacrificial material 203 may be adjusted to be flush with the upper surface of the insulating layer 201 based on a planarization process.
In some embodiments of the present application, the sacrificial material may be, for example, silicon dioxide, PSG, polysilicon, etc., and the sacrificial material requires a large etch selectivity with respect to the insulating material forming the cavity.
3) Forming a bottom electrode and a bottom electrode connecting part of the piezoelectric transducer on the insulating layer; the bottom electrode corresponds to the cavity, and the bottom electrode connecting part corresponds to the first contact point of the signal processor.
In some embodiments of the present application, as shown in fig. 6, a metal layer (not shown) may be deposited on the insulating layer 201 based on a deposition process; the bottom electrode 204 and bottom electrode connection 205 of the piezoelectric transducer can then be formed by patterning the metal layer. Wherein, the bottom electrode 204 and the bottom electrode connecting portion 205 should maintain a good electrical connection therebetween.
In some embodiments of the present disclosure, the material of the metal layer may be a metal, a metal silicide, a metal nitride, a metal oxide, or a conductive material such as conductive carbon. In some exemplary embodiments of the present application, the material of the metal layer may be Mo, Al, Cu, Ag, Au, Ni, Co, TiAl, TiN, TaN, or the like, for example. In addition, the metal layer mentioned below may refer to the description of this section, and is not described in detail.
4) And forming a piezoelectric layer on the bottom electrode.
In some embodiments of the present application, a piezoelectric material is deposited on the insulating layer 201 based on a deposition process, such that a piezoelectric layer 206 may be formed on the bottom electrode 204, as shown in fig. 7.
In some embodiments of the present application, the piezoelectric material may be, for example, a piezoelectric crystal, a piezoelectric ceramic, a piezoelectric polymer, or the like. For example, in some exemplary embodiments of the present application, the piezoelectric crystal may be aluminum nitride, lead zirconate titanate, quartz crystal, lithium gallate, lithium germanate, titanium germanate, lithium iron niobate or lithium tantalate, or the like. For example, in other exemplary embodiments of the present application, the piezoelectric polymer may be polyvinylidene fluoride, vinylidene fluoride-trifluoroethylene copolymer, nylon-11, or vinylidene cyanide-vinyl acetate alternating copolymer, etc.
5) Forming a top electrode and a top electrode connecting part of the piezoelectric transducer on the piezoelectric layer; the top electrode is matched and corresponds to the bottom electrode, and the top electrode connecting part corresponds to the second contact point of the signal processor.
In some embodiments of the present application, as shown in fig. 8, a metal layer may be deposited on the piezoelectric layer 206 based on a deposition process and then patterned, so that a top electrode 208 and a top electrode connection 207 of the piezoelectric transducer may be formed. Wherein, the top electrode 206 and the top electrode connecting portion 207 should maintain a good electrical connection therebetween.
In addition, in other embodiments of the present application, a passivation layer may be selectively deposited on the top electrode to protect the top electrode.
6) And a first connection hole is formed between the bottom electrode connection part and the first contact point, and a second connection hole is formed between the top electrode connection part and the second contact point.
In some embodiments of the present application, as shown in fig. 9, the piezoelectric layer 206, the bottom electrode connection portion 205, the insulating layer 201, and the passivation layer 11 of the signal processor may be etched layer by layer from top to bottom based on an etching process, so that the first connection hole 210 may be formed between the bottom electrode connection portion 205 and the first contact 12. Similarly, the top electrode connection portion 207, the piezoelectric layer 206, the insulating layer 201, and the passivation layer 11 of the signal processor may be etched layer by layer from top to bottom based on an etching process, so that the second connection hole 209 may be formed between the top electrode connection portion 207 and the second contact 13.
7) Forming a first contact electrode in the first connection hole for electrically connecting the bottom electrode connection part and the first contact point; and forming a second contact electrode in the second connecting hole for electrically connecting the top electrode connecting part and the second contact point.
In some embodiments of the present application, as shown in fig. 10, a third metal layer may be deposited and patterned in the first connection hole 210 and the second connection hole 209 based on a deposition process, so that a first contact electrode 212 and a second contact electrode 211 may be correspondingly formed in the first connection hole 210 and the second connection hole 209, respectively.
Thus, an electrical connection between the piezoelectric transducer and the signal processor is realized via the first contact electrode 212 and the second contact electrode 211. The contact between the first contact electrode 212 and the bottom electrode connecting portion 205 and the first contact 12, and the contact between the second contact electrode 211 and the top electrode connecting portion 207 and the second contact 13 may be surface contacts, so as to improve the reliability of the electrical connection.
8) Opening at least one release hole on the piezoelectric layer, and removing the sacrificial material in the cavity through the release hole; the release hole is positioned at the outer periphery of the top electrode and corresponds to the position of the cavity.
In some embodiments of the present application, as shown in fig. 11, the piezoelectric layer 206 may be etched based on an etching process to form one or more release holes 213 on the piezoelectric layer 206, the one or more release holes 213 being communicated with the cavity 202, and the sacrificial material 203 in the cavity 202 may be removed through the release holes 213 and based on the etching process, so as to restore the cavity structure of the cavity 202, thereby facilitating the performance of the piezoelectric transducer. When a plurality of release holes 213 are formed, the plurality of release holes 213 are etched simultaneously, thereby greatly improving the etching efficiency.
In some exemplary embodiments of the present application, generally, the size of the release hole 213 may be determined as needed. In addition, in order to prevent or minimize the sealing material from entering the cavity 202 when the release hole 213 is subsequently plugged, thereby affecting the resonance performance of the cavity 202, the diameter of the release hole 213 may be smaller than 2 μm. Of course, the release holes 213 cannot be too small to affect etching of the sacrificial material 203 in the cavity 202.
9) And forming a sealing layer on the piezoelectric layer, the sealing layer sealing the release hole, the piezoelectric layer, the top electrode, the first contact electrode, and the second contact electrode.
In some embodiments of the present application, as shown in fig. 12, an encapsulant material can be deposited on the piezoelectric layer 206 based on a deposition process to form an encapsulant layer 214 on the piezoelectric layer 206. The sealing layer 214 may serve as a sealing insulation protection for the piezoelectric transducer, and on the other hand, the sealing layer 214 may also serve as an elastic layer for the piezoelectric transducer. Thus, the cavity 202, the bottom electrode 204, the piezoelectric layer 206, the top electrode 208, and the sealing layer 214 cooperate to form the main portion of the piezoelectric transducer. And the thickness and the plane size of the layers of materials are reasonably designed to obtain the ideal resonance frequency and higher quality factor and electromechanical coupling coefficient.
In some embodiments of the present application, the material of the sealing layer 214 may be, for example, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, low-k dielectric material, other suitable materials, combinations thereof, or the like.
In some examples of the present application, after the sealing layer is formed on the piezoelectric layer, the sealing layer may be etched, or the substrate silicon may be etched through a Through Silicon Via (TSV) process, so as to expose an electrode connecting the signal processor and the outside, thereby facilitating subsequent packaging of the device.
In some embodiments of the present application, after the ultrasonic fingerprint identification device is manufactured based on the above method, the structure of the ultrasonic fingerprint identification device is determined (as shown in fig. 12), and since the structure of the ultrasonic fingerprint identification device and the matching relationship thereof have been indirectly described in the process of describing the manufacturing method, the structure of the ultrasonic fingerprint identification device in the present application is not described herein again.
In some embodiments of the present application, the fingerprint identification device based on the above-mentioned ultrasonic wave may be configured in any suitable electronic device to realize fingerprint identification. In an exemplary embodiment of the present application, a typical electronic device is a smart phone, such as shown in fig. 13. In fig. 13, the ultrasonic fingerprint identification device 301 according to the embodiment of the present application is configured on the smart phone 300, when a finger of a user contacts a sensing region of the ultrasonic fingerprint identification device 301, an ultrasonic wave emitted by the ultrasonic fingerprint identification device 301 is reflected after encountering the finger, and the reflected ultrasonic wave carries fingerprint information of the finger because the fingerprint has a convex peak and a concave valley; the reflected ultrasonic waves act on the piezoelectric sensing component of the ultrasonic fingerprint identification device 301 in turn, so that corresponding electrical signals carrying fingerprint information are generated, the electrical signals carrying fingerprint information are transmitted to a processing device (the processing device may be specific processing software, hardware or a combination of software and hardware) in the smart phone 300, the processing device compares and matches the acquired fingerprint information with specific fingerprint information stored in the smart phone 300 in advance after acquiring the acquired fingerprint information, and if the acquired fingerprint information is consistent with the specific fingerprint information, the identification is performed.
In some exemplary embodiments of the present application, the electronic device may also be a personal computer, a laptop computer, a cellular phone, a camera phone, a Personal Digital Assistant (PDA), a media player, a navigation device, a game console, a tablet computer, a wearable device, an anti-access electronic system, a car keyless entry electronic system or a car keyless start electronic system, and the like.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. In particular, as for the apparatus embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (16)
1. A method of manufacturing an ultrasonic fingerprint identification device, comprising:
forming a signal processor based on a CMOS process;
forming an insulating layer on an upper surface of the signal processor;
forming a piezoelectric transducer on the insulating layer based on an MEMS process, and electrically connecting the piezoelectric transducer with the signal processor, specifically:
a cavity of the piezoelectric transducer is formed in the insulating layer;
filling the cavity with a sacrificial material;
forming a bottom electrode and a bottom electrode connecting part of the piezoelectric transducer on the insulating layer; the bottom electrode corresponds to the cavity, and the bottom electrode connecting part corresponds to the first contact point of the signal processor;
forming a piezoelectric layer on the bottom electrode;
forming a top electrode and a top electrode connecting part of the piezoelectric transducer on the piezoelectric layer; the top electrode is matched and corresponds to the bottom electrode, and the top electrode connecting part corresponds to the second contact point position of the signal processor;
a first connecting hole is formed between the bottom electrode connecting part and the first contact point, and a second connecting hole is formed between the top electrode connecting part and the second contact point;
forming a first contact electrode in the first connection hole for electrically connecting the bottom electrode connection part and the first contact point; forming a second contact electrode in the second connection hole for electrically connecting the top electrode connection portion and the second contact point;
opening at least one release hole on the piezoelectric layer, and removing the sacrificial material in the cavity through the release hole; the release hole is positioned at the outer periphery of the top electrode and corresponds to the position of the cavity;
forming a sealing layer on the piezoelectric layer, the sealing layer sealing the release hole, the piezoelectric layer, the top electrode, the first contact electrode, and the second contact electrode.
2. The method of manufacturing an ultrasonic fingerprint recognition apparatus according to claim 1, wherein forming an insulating layer on an upper surface of the signal processor comprises:
depositing an insulating layer on the passivation layer of the signal processor based on a deposition process.
3. The method of claim 1, wherein the opening of the cavity of the piezoelectric transducer in the insulating layer comprises:
and etching the cavity of the piezoelectric transducer in the middle of the insulating layer based on an etching process.
4. The method of manufacturing an ultrasonic fingerprint identification device of claim 1 further comprising, after filling the cavity with a sacrificial material:
adjusting an upper surface of the sacrificial material to be flush with an upper surface of the insulating layer based on a planarization process.
5. The method of claim 1, wherein forming the bottom electrode of the piezoelectric transducer and the bottom electrode connection on the insulating layer comprises:
depositing a first metal layer on the insulating layer based on a deposition process;
and patterning the first metal layer to form a bottom electrode of the piezoelectric transducer and a bottom electrode connecting part.
6. The method of claim 1, wherein forming a piezoelectric layer on the bottom electrode comprises: depositing a piezoelectric material on the insulating layer based on a deposition process to form a piezoelectric layer on the bottom electrode.
7. The method of claim 1, wherein forming the top electrode of the piezoelectric transducer and the top electrode connection on the piezoelectric layer comprises:
depositing a second metal layer on the piezoelectric layer based on a deposition process;
and patterning the second metal layer to form a top electrode of the piezoelectric transducer and a top electrode connecting part.
8. The method of claim 1, wherein the opening a first connection hole between the bottom electrode connection portion and the first contact point comprises:
and etching the piezoelectric layer, the bottom electrode connecting part, the insulating layer and the passivation layer of the signal processor layer by layer from top to bottom based on an etching process so as to form a first connecting hole between the bottom electrode connecting part and the first contact point.
9. The method of claim 1, wherein the opening a second connection hole between the top electrode connection portion and the second contact point comprises:
and etching the top electrode connecting part, the piezoelectric layer, the insulating layer and the passivation layer of the signal processor layer by layer from top to bottom based on an etching process so as to form a second connecting hole between the top electrode connecting part and the second contact point.
10. The method of manufacturing an ultrasonic fingerprint recognition device according to claim 1, wherein the forming of a first contact electrode in the first connection hole and the simultaneously forming of a second contact electrode in the second connection hole comprise:
depositing a third metal layer in the first connecting hole and the second connecting hole based on a deposition process and imaging so as to respectively and correspondingly form a first contact electrode and a second contact electrode in the first connecting hole and the second connecting hole.
11. The method of claim 1, wherein opening at least one release hole in the piezoelectric layer comprises:
and etching the piezoelectric layer based on an etching process so as to open at least one release hole on the piezoelectric layer.
12. The method of claim 11, wherein the release hole has a diameter of less than 2 microns.
13. The method of claim 1, wherein the removing the sacrificial material in the cavity through the release hole comprises:
removing the sacrificial material in the cavity through the release holes and based on an etching process.
14. The method of manufacturing an ultrasonic fingerprint identification device according to claim 1 wherein said forming a sealing layer on said piezoelectric layer comprises:
depositing a sealing material on the piezoelectric layer based on a deposition process to form a sealing layer on the piezoelectric layer.
15. An ultrasonic fingerprint identification device manufactured based on the method of any one of claims 1-14.
16. An electronic device equipped with the ultrasonic fingerprint recognition device according to claim 15.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010312839.4A CN111523436B (en) | 2018-05-18 | 2018-05-18 | Ultrasonic fingerprint identification pixel structure, chip and electronic equipment |
| CN201810477851.3A CN108764087B (en) | 2018-05-18 | 2018-05-18 | Electronic device, ultrasonic fingerprint identification device and manufacturing method thereof |
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| CN109665488A (en) * | 2018-12-29 | 2019-04-23 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN110427822A (en) * | 2019-06-28 | 2019-11-08 | 江西沃格光电股份有限公司 | Ultrasonic fingerprint identification device and its processing method, electronic equipment |
| CN112115753B (en) * | 2019-07-22 | 2023-12-19 | 中芯集成电路（宁波）有限公司 | Fingerprint identification module, manufacturing method thereof and electronic equipment |
| CN112906442B (en) * | 2019-12-04 | 2024-04-30 | 茂丞(郑州)超声科技有限公司 | Wafer-level ultrasonic device and method for manufacturing same |
| CN112115758B (en) * | 2020-04-07 | 2024-03-29 | 中芯集成电路（宁波）有限公司 | Fingerprint identification module, forming method thereof and electronic equipment |
| CN111568468B (en) * | 2020-05-11 | 2023-04-21 | 上海思立微电子科技有限公司 | Ultrasonic chip, ultrasonic detection device and method for detecting blood pressure |
| CN113053984B (en) * | 2021-03-19 | 2024-05-14 | 京东方科技集团股份有限公司 | Display device, corresponding signal processing device and gesture recognition method |
| CN114758367A (en) * | 2022-04-29 | 2022-07-15 | 深圳市汇顶科技股份有限公司 | Fingerprint identification device and electronic equipment |
| CN115188034B (en) * | 2022-07-14 | 2023-10-20 | 深圳市汇顶科技股份有限公司 | Ultrasonic fingerprint detection device and electronic equipment |
| WO2024055160A1 (en) * | 2022-09-13 | 2024-03-21 | 深圳市汇顶科技股份有限公司 | Ultrasonic fingerprint apparatus and electronic device |
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| CN111523436A (en) | 2020-08-11 |
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