CN108761641A - The method for preparing micro-nano structure in fiber end face by micro-nano structure transfer method - Google Patents
The method for preparing micro-nano structure in fiber end face by micro-nano structure transfer method Download PDFInfo
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- CN108761641A CN108761641A CN201810839320.4A CN201810839320A CN108761641A CN 108761641 A CN108761641 A CN 108761641A CN 201810839320 A CN201810839320 A CN 201810839320A CN 108761641 A CN108761641 A CN 108761641A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/241—Light guide terminations
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The present invention provides a kind of method preparing micro-nano structure in fiber end face by micro-nano structure transfer method, it is characterised in that includes the following steps：Step 1：One hard substrate is provided, and forms a sacrificial layer in the hard substrate, and the sacrificial layer of the hard substrate marginal portion is removed；Step 2：One layer of transition zone is formed on the sacrificial layer, the sacrificial layer is completely covered the transition zone, and forms micro-nano structure array on the transition zone；Step 3：Layer protective layer is covered on the micro-nano structure, the micro-nano structure is protected.Step 4：Transition zone with micro-nano structure is detached from the hard substrate；Step 5：One end of micro-nano structure will not be formed on the transition zone and fiber end face forms a fixed connection；Step 6：Remove the protective layer.The present invention is by introducing one layer of transition zone PDMS so that the processing of micro-nano structure is carried out in fiber end face to accomplish scale production.
Description
Technical field
The present invention relates to technical field of micro and nano fabrication, and in particular to one kind is by micro-nano structure transfer method in fiber end face
The method for preparing micro-nano structure.
Background technology
Optical signal can at a distance be transmitted as a kind of and be limited in the means in small space, optical sensing side by optical fiber
The application in face has obtained in-depth study and has been realized in multiple fields.In the latest 20 years, with the progress of micro-nano technology science and technology, more
Carry out more micro-nano structure (such as photonic crystal, metal Nano structure etc.) and is successfully accomplished and has obtained extensive research, this
Micro-nano structure brings numerous unprecedented sensing characteristics slightly.Since the 1970s, scientific research personnel just recognizes
Optical fiber technology and micro-nano technology technology be combined the huge advantage brought.Thereafter, pressure sensor, surface-enhanced Raman light
The realization of the micro-nano fibers sensor such as spectrum sensor makes this advantage become reality.
It is technical to realize also face although the combination of optical fiber and micro-nano technology technology has very important significance
Face certain challenge.The structure of optical fiber determines that its end face is the unique entrance of light, therefore also becomes micro-nano technology
Preferred platform.However the technical difficulty of micro-nano technology that fiber end face narrow space greatly improves.Although scientific research personnel
A variety of technologies in fiber end face realization micro-nano structure are had attempted to, and achieve many progress, but processing technology remains unchanged
It is one of the bottleneck of micro-nano fiber sensor development.
Mainly fiber end face directly add using hot melt or corrosion technology currently, being processed in fiber end face
Work.Under hot melt state, due to surface tension, the end of optical fiber can form lenticular or droplet-like structure, be used for the collimation of light
Or prepare high-quality Whispering-gallery-mode resonant cavity.Optic fibre end under hot melt state can also be added by way of coining
Work, but due to the higher fusing point of simple glass optical fiber, which can be only applied to the polymer optical fiber and halogen of low melting point at present
Change silver-colored optical fiber.Using corrosion technology, the processing of conical fiber end face can be completed, but, corrosion technology the same with hot-melt technology
It is difficult to obtain more complicated micro-nano structure.
Using more accurate etching technique, more complicated structure can be realized in the end face of optical fiber, these etching skills
Art includes focused ion beam technology and femtosecond laser technology.Researcher successfully uses focused ion beam to be prepared in the end of optical fiber
The required probe of atomic force microscope and cantilever, have been successfully prepared phase Fresnel saturating using femtosecond laser etching technique
Mirror and optical grating construction.Although making the preparation that labyrinth may be implemented with the aforedescribed process, since these technologies do not have
The possibility of scale, therefore they only can be as the means of Proof-Of Principle in scientific research.
Invention content
In view of this, the present invention provides a kind of side preparing micro-nano structure in fiber end face by micro-nano structure transfer method
Method, by introducing one layer of transition zone PDMS so that the processing of micro-nano structure is carried out in fiber end face to accomplish scale production.
The present invention provides a kind of method preparing micro-nano structure in fiber end face by micro-nano structure transfer method, feature
It is to include the following steps：
Step 1：One hard substrate is provided, and forms a sacrificial layer in the hard substrate, and by the hard base
The sacrificial layer of feather edge part removes；
Step 2：One layer of transition zone is formed on the sacrificial layer, the sacrificial layer is completely covered the transition zone, and
Micro-nano structure array is formed on the transition zone；
Step 3：Layer protective layer is covered on the micro-nano structure, the micro-nano structure is protected.
Step 4：Transition zone with micro-nano structure is detached from the hard substrate；
Step 5：One end of micro-nano structure will not be formed on the transition zone and fiber end face forms a fixed connection；
Step 6：Remove the protective layer.
Preferably, the sacrificial layer is the first photoresist layer, and the protective layer is the second photoresist layer.
Preferably, it is formed in step 3 before the protective layer, further includes step 3a：To the first light of the sacrificial layer
Photoresist layer is exposed.
Preferably, step 4 further includes：
Step 4a：The sacrificial layer is removed, the transition zone, the micro-nano structure on the transition zone and the micro-nano are made
Protective layer in structure is detached from from the hard substrate together；
Step 4b：By the transition zone, the micro-nano structure on the transition zone and the guarantor on the micro-nano structure
Sheath is overturn so that the excessive layer does not form one end of micro-nano structure upward.
Preferably, the transition zone is PDMS layer.
Preferably, step 5 further includes：
Step 5a：Activation process is carried out to the transition zone and the fiber end face；
Step 5b：So that the transition zone and the fiber end face is contacted and forms bonding.
The invention has the advantages and positive effects that：Present invention introduces one layer of transition zones so that is carried out in fiber end face
The processing of micro-nano structure can accomplish scale production；And the technique applied in this method has the micro-nano technology in prior art
Technology has good compatibility, and ripe micro-nano technology technology can be utilized to complete the preparation of structure；Also, the processing step
Suddenly can parallel processing, scale processing can be carried out.
Description of the drawings
Fig. 1 is the structural schematic diagram that the sacrificial layer is formed in the hard substrate；
Fig. 2 is the structural schematic diagram of sacrificial layer removal marginal portion；
Fig. 3 is the structural schematic diagram that the transition zone is formed on the sacrificial layer；
Fig. 4 is the structure for forming micro-nano structure on the transition zone and forming the protective layer on the micro-nano structure
Schematic diagram；
Fig. 5 is the structural schematic diagram modified to the marginal portion of the device in the hard substrate；
Fig. 6 is the removal sacrificial layer, and the structural schematic diagram that first entirety is overturn；
Fig. 7 is the structure for not forming one end of micro-nano structure on the transition zone and forming a fixed connection with fiber optic bundle end face
Schematic diagram；
Fig. 8 is the structural schematic diagram for carrying out shaping and remove the protective layer whole to described first.
Specific implementation mode
Hereinafter reference will be made to the drawings more detailed must describe the present invention.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to be not shown certain
Well known part.For brevity, the structure that can be obtained after several steps described in a width figure.
It should be appreciated that in the structure of outlines device, it is known as positioned at another floor, another area when by a floor, a region
When domain " above " or " top ", can refer to above another layer, another region, or its with another layer, it is another
Further include other layers or region between a region.And device is overturn, this layer, region will be located at another layer, another
One region " following " or " lower section ".
If in order to describe located immediately at another layer, another region above scenario, text, which will use, " directly to exist ...
Above " or " ... abut above and therewith " form of presentation.
The present invention can be presented in a variety of manners, some of them example explained below.
As shown in Figure 1, providing a hard substrate 100, and a sacrificial layer 101 is formed in the hard substrate 100.
The material of the hard substrate 100 can be glass, quartz, metal, organic polymer and semi-conducting material etc.,
100 surface of the hard substrate ensures flat smooth.In one embodiment of the invention, the hard substrate 100 can be by
Semi-conducting material is made, and the semi-conducting material is for example including III-V race's semiconductor, such as GaAs, InN, SiC and IV race half
Conductor, such as Si, Ge.
In one embodiment of the invention, the sacrificial layer 101 is, for example, the first photoresist layer, forms first light
Photoresist layer can be formed by spin coating, can also be carried out spin coating by centrifugation apparatus and be formed, that is, be fixed on hard substrate 100
On centrifugation apparatus, and upper photoresist is dripped on 100 surface of the hard substrate, then starts the centrifugation apparatus so that described
100 high speed rotation of hard substrate, the photoresist even application is in 100 surface of the hard substrate.Then to the photoresist
It is dried, forms first photoresist layer.
Further, as shown in Fig. 2, the sacrificial layer 101 of the hard substrate frontside edge is removed.The process is included in
The first mask plate is covered on the sacrificial layer 101, then will be covered with the hard substrate 100 and sacrificial layer of the first mask plate
101 are exposed under litho machine, then by after exposure hard substrate 100 and sacrificial layer 101 be put into developer solution and develop,
Remove the sacrificial layer 101 of the hard substrate frontside edge.
In one embodiment of the invention, first photoresist is positive photoresist, passes through first mask
The marginal portion to the hard substrate 100 of version selectivity is exposed, and is made it dissolve in developer solution, thus will be described hard
The sacrificial layer 101 of matter substrate frontside edge part removes.
Further, as shown in figure 3, forming one layer of transition zone 102 on the sacrificial layer 101, the transition zone 102 will
The sacrificial layer 101 is completely covered, and micro-nano structure array 103 is formed on the transition zone 102.
In a preferred embodiment of the invention, the transition zone is that (Polydimethylsioxane gathers PDMS
Dimethyl siloxane) layer, PDMS is a kind of the macromolecule organic silicon compound, have optical clear, optical characteristics, low-surface-energy,
Highly-breathable and well elasticity.PDMS is a kind of thick liquid in liquid, is referred to as silicone oil；It is then inertia silicon in solid-state
Glue has nontoxic, hydrophobicity, the feature of transparent elastic.It can be uniform with certain proportion with curing agent by host agent when being tested
After mixing, recycling, which vacuumizes, makes the air in mixed liquor be discharged, and finally baking certain time can make PDMS at a certain temperature
Solidification.
PDMS is uniformly applied in the hard substrate 100, and remaining sacrificial layer 101 is completely covered.Institute
It states and forms the PDMS layer on sacrificial layer 101 and can be formed by spin coating, i.e., will form the hard base of the sacrificial layer 101
Bottom 100, which is placed on gyroscope, to rotate so that the hard substrate 100 for having formed the sacrificial layer 101 is in rotation status
Backspin, which applies, covers the PDMS layer, and carries out drying and processing.
The PDMS layer is covered in 101 surface of the sacrificial layer, and in the edge of the hard substrate 100, completely
Cover the sacrificial layer 101.
Further, as shown in figure 4, processing micro-nano structure array 103 on the PDMS layer 102.Since PDMS is one
Kind of silica based polyalcohol, chemical property is close with glass, with most photoresists, developer solution, go glue, mordant mutually simultaneous
Hold, therefore, in existing processing technology, the processing of a variety of micro-nano structures can be completed in PDMS substrates.
Further, the sacrificial layer 101 is exposed under litho machine.
Further, layer protective layer 104 is formed on the micro-nano structure array 103.The protective layer 104 will be described
Micro-nano structure array 103 is completely covered to be protected to it, keeps it injury-free in subsequent manufacturing procedure.
Preferably, the protective layer 104 is the second photoresist layer, and second photoresist layer can be selected and described first
The identical photoresist of photoresist layer.Equally, forming second photoresist layer can be formed by simply coating, and can also be led to
It crosses centrifugation apparatus progress spin coating to be formed, that is, hard substrate 100 is fixed on centrifugation apparatus, and in the micro-nano structure battle array
The upper photoresist of 103 surface of row drop, then starts the centrifugation apparatus so that 100 high speed rotation of the hard substrate, the photoetching
Glue even application is in 103 surface of the micro-nano structure array.Then the photoresist is dried, forms second photoetching
Glue-line.
Further, as shown in figure 5, the marginal portion of the device formed in the hard substrate 100 is modified, i.e.,
The marginal portion of device is cut off.
Further, as shown in fig. 6, removing the sacrificial layer 101, make the PDMS layer 102, on the PDMS layer 102
Micro-nano structure array 103 and the micro-nano structure array 103 on protective layer 104 together from the hard substrate 100
It is detached from, and by the PDMS layer 102, the micro-nano structure array 103 on the PDMS layer 102 and the micro-nano structure battle array
Protective layer 104 on row 103 is overturn so that the PDMS layer 102 is upward.
Due to before armor coated 104, being exposed to the sacrificial layer 101, so only needing will be described
Sacrificial layer 101 develops in developer solution, you can the sacrificial layer 104 is removed, realize the PDMS layer 102 with it is described hard
The separation of matter substrate 100, meanwhile, although the protective layer 104 is selected and 101 same photoresist of the sacrificial layer, by
It is not exposed in the protective layer 104, the developer solution does not constitute influence to the protective layer 104.
Further, as shown in fig. 7, the one end and 200 end of optical fiber that will not form micro-nano structure on the transition zone 102
Face forms a fixed connection.
Specifically, by the transition zone 102, the transition zone 102 micro-nano structure 103 and the micro-nano structure
This as a whole, is collectively referred to as the first entirety by the protective layer 104 on 103 below, whole from described hard by described first
It is whole to described first to overturn after being detached from matter substrate 100, make there is no shape on the described first whole transition zone 102
At micro-nano structure one end upward, described first whole 104 one end of protective layer is positioned over downward in the hard substrate.
Further, activation process is carried out to the transition zone 102 and 200 face of the optical fiber end；And make the transition
Layer 102 and 200 face of the optical fiber end are contacted and form bonding.
Further, 200 end face of the transition zone 101 and the optical fiber is handled using oxygen plasma, it can be in the two
Surface Creation active group can form permanent bonding after the two contact.
200 end face of optical fiber and the transition zone 102 are not formed after one end bonding of micro-nano structure, described first is whole
Body, i.e., the described transition zone 102, the micro-nano structure 103 on the transition zone 102 and the protective layer on the micro-nano structure 103
104 by global transfer to the fiber end face.In the process, fiber optic bundle may be implemented not formed with the transition zone 102
One end of micro-nano structure bonds, you can to realize the batch production for processing micro-nano structure in fiber end face.
After first global transfer to the fiber end face, the area of the transition zone 102 can be more than the light
The area of fine end face further carries out shaping as shown in figure 8, whole to described first, makes the described first whole end face
Area is identical as the area of the fiber end face.
Finally, the protective layer 104 is removed.The protective layer be the second photoresist layer, to second photoresist layer into
Row exposure, development treatment, remove second photoresist layer.
The present invention finally forms the processing of micro-nano structure 103, example by the above method on the end face of the optical fiber 200
Such as, method of the invention is suitable for processing of the 3-dimensional metal nanostructure in fiber end face.
Present invention introduces one layer of transition zones so that the processing of micro-nano structure is carried out in fiber end face can realize scale metaplasia
Production；And the technique applied in this method has the micro-nano technology technology in prior art to have good compatibility, can utilize
Ripe micro-nano technology technology completes the preparation of structure；Also, the procedure of processing can parallel processing, scale can be carried out
Change is handled.
Finally it should be noted that：Obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Go out other various forms of variations or variation.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (6)
1. a kind of method preparing micro-nano structure in fiber end face by micro-nano structure transfer method, it is characterised in that including following
Step：
Step 1：One hard substrate is provided, and forms a sacrificial layer in the hard substrate, and by the hard substrate side
The sacrificial layer removal of edge point；
Step 2：One layer of transition zone is formed on the sacrificial layer, the sacrificial layer is completely covered the transition zone, and in institute
It states and forms micro-nano structure array on transition zone；
Step 3：Layer protective layer is covered on the micro-nano structure, the micro-nano structure is protected.
Step 4：Transition zone with micro-nano structure is detached from the hard substrate；
Step 5：One end of micro-nano structure will not be formed on the transition zone and fiber end face forms a fixed connection；
Step 6：Remove the protective layer.
2. micro-nano structure according to claim 1 is in the transfer method of fiber end face, it is characterised in that：The sacrificial layer is
First photoresist layer, the protective layer are the second photoresist layer.
3. micro-nano structure according to claim 2 is in the transfer method of fiber end face, it is characterised in that：Shape in step 3
Further include step 3a before the protective layer：First photoresist layer of the sacrificial layer is exposed.
4. micro-nano structure according to claim 1 or 3 is in the transfer method of fiber end face, it is characterised in that：Step 4 is also wrapped
It includes：
Step 4a：The sacrificial layer is removed, the transition zone, the micro-nano structure on the transition zone and the micro-nano structure are made
On protective layer be detached from from the hard substrate together；
Step 4b：By the transition zone, the micro-nano structure on the transition zone and the protective layer on the micro-nano structure
It is overturn so that the excessive layer does not form one end of micro-nano structure upward.
5. micro-nano structure according to claim 1 is in the transfer method of fiber end face, it is characterised in that：The transition zone is
PDMS layer.
6. transfer method of the micro-nano structure in fiber end face according to claim 1 or 5, it is characterised in that：Step 5 is also wrapped
It includes：
Step 5a：Activation process is carried out to the transition zone and the fiber end face；
Step 5b：So that the transition zone and the fiber end face is contacted and forms bonding.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810839320.4A CN108761641A (en) | 2018-07-27 | 2018-07-27 | The method for preparing micro-nano structure in fiber end face by micro-nano structure transfer method |
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| CN201810839320.4A CN108761641A (en) | 2018-07-27 | 2018-07-27 | The method for preparing micro-nano structure in fiber end face by micro-nano structure transfer method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038776A (en) * | 2020-09-09 | 2020-12-04 | 哈尔滨工业大学 | Preparation method of stretchable elastic cross metamaterial |
| CN112678766A (en) * | 2020-02-20 | 2021-04-20 | 大连理工大学 | Method for transferring nano structure and application thereof |
| CN113257687A (en) * | 2021-05-11 | 2021-08-13 | 中山大学 | Method for covering cladding of micro-nano structure of semiconductor |
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| CN104345358A (en) * | 2013-07-26 | 2015-02-11 | 上海交通大学 | Method for manufacturing metal micro-nano structure on optical fiber end surface by utilizing stripping-adhering mode |
| CN104808284A (en) * | 2015-04-14 | 2015-07-29 | 北京工业大学 | Flexible transfer method of photonic crystal or micro/nano grating structure on end surface of optical fiber |
| CN106768279A (en) * | 2017-01-20 | 2017-05-31 | 哈尔滨工业大学 | Optical fiber F P sound pressure sensors based on metal line film |
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| CN102279007A (en) * | 2011-06-29 | 2011-12-14 | 北京工业大学 | Optical fiber coupled wave guide raster sensor and preparation method thereof |
| CN104345358A (en) * | 2013-07-26 | 2015-02-11 | 上海交通大学 | Method for manufacturing metal micro-nano structure on optical fiber end surface by utilizing stripping-adhering mode |
| CN104808284A (en) * | 2015-04-14 | 2015-07-29 | 北京工业大学 | Flexible transfer method of photonic crystal or micro/nano grating structure on end surface of optical fiber |
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| CN112678766A (en) * | 2020-02-20 | 2021-04-20 | 大连理工大学 | Method for transferring nano structure and application thereof |
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