CN108761614A - Optical filter and infrared image sensing system comprising the optical filter - Google Patents
Optical filter and infrared image sensing system comprising the optical filter Download PDFInfo
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- CN108761614A CN108761614A CN201810884347.5A CN201810884347A CN108761614A CN 108761614 A CN108761614 A CN 108761614A CN 201810884347 A CN201810884347 A CN 201810884347A CN 108761614 A CN108761614 A CN 108761614A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 160
- 239000011521 glass Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- 229910052681 coesite Inorganic materials 0.000 claims description 25
- 229910052906 cristobalite Inorganic materials 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 25
- 229910052682 stishovite Inorganic materials 0.000 claims description 25
- 229910052905 tridymite Inorganic materials 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 13
- 229910007261 Si2N3 Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 11
- 230000008859 change Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 19
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000000392 somatic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
A kind of infrared image sensing system the present invention relates to optical filter and comprising the optical filter, the optical filter includes glass substrate and the I R film layers and the 2nd IR film layers that are coated on respect to two surfaces of the glass substrate, along the direction far from the glass substrate, the first IR film layers include alternately being coated with the first low refractive index material layer and the first high refractive index material layer, and the 2nd IR film layers include the second low refractive index material layer and the second high refractive index material layer being alternately coated with；The outermost layer of the first IR film layers is the first low refractive index material layer, and the outermost layer of the 2nd IR film layers is the second low refractive index material layer.The optical filter of the present invention can effectively promote the wear-resisting property of film layer, while reducing the drift value that optical filter passband center wavelengths change with incident angle in the case where ensureing that near infrared light has high transmittance.
Description
Technical field
A kind of outer red image the invention belongs to optical sensing technology field more particularly to optical filter and comprising the optical filter
Sensor-based system.
Background technology
With the development of science and technology, in smart mobile phone, mobile lidar, safe burglar-proof gate inhibition, smart home, virtual reality/increasing
It is gradually embedded in face equipment, gesture identification etc. in the terminals such as strong reality/mixed reality, 3D somatic sensation television games, 3D camera shootings and display
Function.
It needs to use near-infrared spike filter in recognition of face, gesture identification, can play close red in anti-reflection passband
UV light ends the effect of visible light in environment.Usual near-infrared spike filter includes two membrane systems, respectively IR band logicals film
System and long wave lead to AR membrane systems.However optical filter in the prior art is to the antireflective effect of near infrared light and cut-off visible light
Effect is poor, and membrane system bandpass center is larger with the drift value of angle, exists simultaneously the problem of membrane system film layer wears no resistance, from
And cause after filter set is attached to the devices such as recognition of face, gesture identification, imaging effect is poor, accuracy of identification is not high.
Invention content
The purpose of the present invention is to provide a kind of optical filter of high-wearing feature and include the infrared image sensing of the optical filter
System solves the problems, such as that existing optical filter passband center wavelengths are big with angle drift amount.
To achieve the above object, the present invention provides a kind of optical filter, including glass substrate and is coated on the glass substrate
The first IR film layers and the 2nd IR film layers on opposite two surfaces, along the direction far from the glass substrate, the first IR
Film layer includes the first low refractive index material layer and the first high refractive index material layer being alternately coated with, and the 2nd IR film layers include handing over
For the second low refractive index material layer and the second high refractive index material layer being coated with；
The outermost layer of the first IR film layers is the first low refractive index material layer, and the outermost layers of the 2nd IR film layers is the
Two low refractive index material layers.
According to an aspect of the present invention, within the scope of 800-1200nm, the first IR film layers and the 2nd IR films
Layer all has a passband wave band, two transition wave bands and two cut-off wave bands, the passband wave band and is located at two cut-offs
Between wave band, the little bellow section is between the passband wave band and the cut-off wave band；
The passband wave band has centre wavelength, and in the range of incident angle changes from 0 ° to 30 °, the passband wave
The centre wavelength drift value of section is between 7nm between 13nm.
According to an aspect of the present invention, in the range of incident angle changes from 20 ° to 30 °, incident angle often changes
1 °, the drift value of the centre wavelength of the passband wave band is less than 5nm.
According to an aspect of the present invention, the transmitance of the passband wave band is more than 90%, the transmission of the cut-off wave band
Rate is less than 0.1%.
According to an aspect of the present invention, adjacent first low refractive index material layer and the first high refractive index material layer
Physical thickness ratio in 0.01 to 100 range；
The ratio of adjacent second low refractive index material layer and the physical thickness of second high refractive index material layer
In 0.01 to 100 range.
According to an aspect of the present invention, within the scope of 800nm to 1200nm, first low refractive index material layer and institute
The refractive index for stating the second low refractive index material layer is respectively less than 3, first high refractive index material layer and second high refractive index
The refractive index of material layer is all higher than 3.
According to an aspect of the present invention, first low refractive index material layer and second low refractive index material layer
Material is selected from SiO2、SiN、Si2N、Si2N3、Si3N4In it is one or more.
According to an aspect of the present invention, first high refractive index material layer and second high refractive index material layer are equal
For layer of hydrogenated, the extinction coefficient in 800nm to 1200nm wave-length coverages is less than 0.002, and the refractive index at 85nm is more than
3.6, the refractive index at 940nm is more than 3.55.
According to an aspect of the present invention, the silane is that sputtering reaction is coated with material layer, sputter temperature ranging from 80-
300 degrees Celsius, hydrogen flowing quantity 10-50sccm, sputter rate 0.1nm/s-1nm/s.
According to an aspect of the present invention, the overall thickness of the first IR film layers and the 2nd IR film layers is less than 8 microns.
According to an aspect of the present invention, the full width at half maximum value of the optical filter is less than 114nm.
The present invention also provides a kind of outer infrared image sensing systems including above-mentioned optical filter, including light source unit and reception
Unit,
The light source unit includes IR transmitting light sources and the first lens assembly；
The receiving unit includes the second lens assembly, optical filter and infrared image sensor.
A kind of scheme according to the present invention has near infrared light the premise of high transmittance in the optical filter for ensureing the present invention
Under, the drift value that optical filter passband center wavelengths change with incident angle can be greatly reduced, optical filter transition region is improved
Steepness further increases signal-to-noise ratio in recognition of face, gesture recognition system, it is total to reduce film layer to improve image quality
Thickness and plated film total time, production cost is reduced, use cost has been saved for terminal client.
First IR film layers are set as first by a kind of scheme according to the present invention close to the side of glass substrate and outermost layer
Low refractive index material layer sets the 2nd IR film layers to the second low-index film close to the side of glass substrate and outermost,
Be conducive to the adhesive force of the first IR film layers and the 2nd IR film layers, ensure the jail of the first IR film layers and the 2nd IR film layers and glass substrate
Solidity, and its hardness is high, and wearability is good, and corrosion resistance is strong, to advantageously ensure that the first IR film layers and second of the present invention
The stable structure of IR film layers, and the service life of the first IR film layers and the 2nd IR film layers is improved, further improve the present invention
Optical filter service life.Meanwhile the thickness of optical filter of the invention is small, is conducive to the production cost for saving the present invention.
Description of the drawings
Fig. 1 is the configuration diagram for schematically illustrating the first IR film layers according to one embodiment of the present invention；
Fig. 2 is schematically shown according to a kind of configuration diagram of 2nd IR film layers of embodiment of invention；
Fig. 3 is the wavelength of light transmittance curve figure for schematically showing the first IR film layers in embodiment 1；
Fig. 4 is the wavelength of light transmittance curve figure for schematically showing the 2nd R film layers in embodiment 1；
Fig. 5 is the wavelength of light transmittance curve figure for schematically showing optical filter in embodiment 1；
Fig. 6 is the wavelength of light transmittance curve figure for schematically showing the first IR film layers in embodiment 2；
Fig. 7 is the wavelength of light transmittance curve figure for schematically showing the 2nd R film layers in embodiment 2；
Fig. 8 is the wavelength of light transmittance curve figure for schematically showing optical filter in embodiment 2；
Fig. 9 is the wavelength of light transmittance curve figure for schematically showing the first IR film layers in embodiment 3；
Figure 10 is the wavelength of light transmittance curve figure for schematically showing the 2nd R film layers in embodiment 3；
Figure 11 is the wavelength of light transmittance curve figure for schematically showing optical filter in embodiment 3；
Figure 12 is the configuration diagram for schematically showing the infrared image sensing system comprising optical filter of the present invention.
Meaning in attached drawing representated by each label is as follows：
1, glass substrate；2, IR film layers；3, AR film layers；21, the first low refractive index material layer；22, the first high refractive index material
The bed of material；31 second low refractive index material layers；32, the second high refractive index material layer；4, light source unit；41, IR light sources；42, first
Lens assembly；5, receiving unit；51, the second barrel assembly；52, optical filter；53, infrared image sensor；6, face/hand.
Specific implementation mode
It, below will be to embodiment in order to illustrate more clearly of embodiment of the present invention or technical solution in the prior art
Needed in attached drawing be briefly described.It should be evident that the accompanying drawings in the following description is only some of the present invention
Embodiment for those of ordinary skills without creative efforts, can also be according to these
Attached drawing obtains other attached drawings.
When being described for embodiments of the present invention, term " longitudinal direction ", " transverse direction ", "upper", "lower", " preceding ",
" rear ", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", the orientation or positional relationship expressed by "outside" are to be based on phase
Orientation or positional relationship shown in the drawings is closed, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, with specific azimuth configuration and operation, therefore above-mentioned term cannot
It is interpreted as limitation of the present invention.
The present invention is described in detail with reference to the accompanying drawings and detailed description, embodiment cannot go to live in the household of one's in-laws on getting married one by one herein
It states, but therefore embodiments of the present invention are not defined in following implementation.
Fig. 1 is the configuration diagram for schematically showing the first IR film layers according to one embodiment of the present invention.Fig. 2 is signal
Property indicates the configuration diagram of the 2nd IR film layers in a kind of embodiment according to the present invention.In conjunction with shown in Fig. 1 and Fig. 2, this hair
Bright optical filter includes glass substrate 1, the first IR film layers 2 and the 2nd IR film layers 3.The glass substrate 1 of the present invention may be used
D263T or AF32, the first IR film layers 2 and the 2nd IR film layers 3 are coated on respectively on two opposite surfaces of glass substrate 1,
In present embodiment, the first IR film layers 2 are coated on the upper surface of glass substrate 1, and the 2nd IR film layers 3 are coated on glass substrate 1
Lower surface.
As shown in Figure 1, the first IR film layers 2 of the optical filter of the present invention include that the first low refractive index material layer 21 and first is high
Refractive index material 22.In the present embodiment, the first IR film layers 2 include four layer of material altogether, along far from glass substrate 1
The direction on surface, respectively the first low refractive index material layer 21, the first high refractive index material layer 22 and the first low-index material
Layer 21.I.e. in the first IR film layers 2 of the present invention, need to ensure the material layer close to glass substrate 1 and outermost material layer
For the first low refractive index material layer 21, it can so ensure that the first IR film layers 2 of the present invention have preferable wearability and scratch resistance
Wiping property.
Design according to the present invention, as long as ensureing that the innermost layer of the first IR film layers 2 and outermost layer are the first low-refraction material
The bed of material 21, that is, talk about, along the direction far from 1 upper surface of glass substrate, the first IR film layers 2 of the invention include handing over
For the first low refractive index material layer 21 and the first high refractive index material layer 22 being coated with, the outermost layer of the first IR film layers 2 is first
Low refractive index material layer 21.That is the structure of the first IR film layers 2 of the invention can be expressed as (LH) * N, L, and wherein L indicates first
Low refractive index material layer 21, H indicate the first high refractive index material layer 22, and (LH) * N indicate the first low refractive index material layer 21 and the
One high refractive index material layer 22 is alternately coated with n times, and N is the integer more than or equal to 1.
As shown in Fig. 2, the 2nd IR film layers 3 of the present invention are coated on the lower surface of glass substrate 1, in the present embodiment,
2nd IR film layers 3 include the second low refractive index material layer 31 and the second high refractive index material layer 32.In the present embodiment, along
Direction far from 1 lower surface of glass substrate, the 2nd IR film layers include the second low refractive index material layer 31, the second high refractive index successively
Material layer 32 and the second low refractive index material layer 31.Close to 1 lower surface of glass substrate and outermost in the 2nd IR film layers 3 of the present invention
The material layer of layer is the second low refractive index material layer 31, and it is preferable can so to ensure that the 2nd IR film layers 3 of the present invention have
Wear-resisting property.
Design according to the present invention, along the direction far from 1 lower surface of glass substrate, the 2nd IR film layers 3 of the invention packet
It includes the second low refractive index material layer 31 being alternately coated with and the second high refractive index material layer 32, the outermost layer of the 2nd IR film layers 3 is
Second low-index material 31.That is the structure of the 2nd IR film layers 3 of the invention can be expressed as (L2H2)*n、L2, wherein L2It indicates
Second low refractive index material layer 31, H2Indicate the second high refractive index material layer 32, (L2H2) * n the second low refractive index material layers of expression
31 and second high refractive index material layer 32 be alternately coated with n times, n is the integer more than or equal to 1.
Optical filter according to the present invention, the first low refractive index material layer 21 and the first high refraction in 2 structure of the first IR film layers
The times N that rate material layer 22 is alternately coated with, with the second low refractive index material layer 31 and the second high refraction in 3 structure of the 2nd IR film layers
Alternately parameter n's rate material layer 32 that is coated with can be the same or different, i.e. the first IR film layers 2 of optical filter of the invention and the
The number of layers for including in two IR film layers 3 can with it is identical can be different.
In addition, optical filter according to the present invention, the first adjacent low refractive index material layer 21 and first in the first IR film layers 2
The ratio of the physical thickness of high refractive index material layer 22 is in 0.01 to 100 range.The second adjacent low folding in 2nd IR film layers 3
The ratio of the physical thickness of rate material layer 31 and the second high refractive index material layer 32 is penetrated in 0.01 to 100 range.
In the present embodiment, second in the first high refractive index material layer 22 and the 2nd IR film layers 3 of the first IR film layers 2
High refractive index material layer 32 is layer of hydrogenated, and layer of hydrogenated is coated with when being coated in such a way that sputtering is reacted, control when being coated with
For temperature within the scope of 80 DEG C -300 DEG C, control hydrogen flowing quantity is 10-50sccm, and control sputtering rate is 0.1nm/s-1nm/s, from
And make the first high refractive index material layer 22 and the second high refractive index material layer 32 of the invention in 800-1200nm wave-length coverages
Refractive index be more than 3, extinction coefficient is less than 0.002, and more than 3.6, the refractive index at 960nm is more than refractive index 850nm at
3.55, and then be conducive to adjust the offset of optical filter passband center wavelengths of the present invention.
Optical filter according to the present invention, in the first low refractive index material layer 21 and the 2nd IR film layers 3 in the first IR film layers 2
The refractive index of second low refractive index material layer 31 is respectively less than 3.The material of first low refractive index material layer 21 can be selected from SiO2、
SiN、Si2N、Si2N3、Si3N4In it is one or more, i.e. the first low refractive index material layer 21 can be a certain material, also may be used
To be mixing material.The material of second low refractive index material layer 31 can also be selected from SiO2、SiN、Si2N、Si2N3、Si3N4In
It is one or more, it also just says, the second low refractive index material layer 31 can be a certain material, can also be mixture.Therefore,
In the present invention, the material of the first low refractive index material layer 21 in the first IR film layers 2 and the second low refractive index material layer 31 can
To be identical, can also be different.
The optical filter being arranged according to the above embodiment, it is ensured that in 800-1200nm wave-length coverages, the first IR films
Layer 2 and the 2nd IR film layers 3 all have a passband wave band, two transition wave bands and two cut-off wave bands, passband wave band and are located at two
Between a cut-off wave band, little bellow section is located between passband wave band and cut-off wave band.It can so ensure the optical filter of the present invention
It can realize the high-permeability near infrared light, the light for ending its all band passes through.In addition, optical filter passband wave band of the present invention
Centre wavelength, in the range of incident angle changes from 0 ° to 30 °, the centre wavelength drift value of passband wave band between 7nm extremely
Between 13nm.
The optical filter of the present invention is described in detail below by way of specific embodiment.
Embodiment 1：
In the present embodiment, along the direction far from glass substrate 1, the structure of the first IR film layers 2 of optical filter is (LH) *
N, L, N=17.In the present embodiment, the first high refractive index material layer 22 uses layer of hydrogenated, the first low refractive index material layer 21
Using SiO2, the overall thickness of the first IR film layers 2 is 2.44 μm.Along the direction far from glass substrate 1, the 2nd IR films of optical filter
The structure of layer 3 is (L2H2)*n、L2, n=16.Second high refractive index material layer 32 of the 2nd IR film layers 3 uses layer of hydrogenated, the
Two low refractive index material layers use SiN, and the thickness of the 2nd IR film layers 3 is 5.5 μm.
Table 1 shows the parameter of 2 each material layer of the first IR film layers：
| 1 | 2 | 3 | 4 | 5 | |
| Material | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Thickness (nm) | 32.42 | 27.09 | 92.93 | 37.22 | 83.78 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | Si:H | SiO2 | Si:H | SiO2 | Si:H |
| Thickness (nm) | 75.25 | 85.01 | 45.84 | 60 | 55.06 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Thickness (nm) | 125.72 | 76.15 | 60.96 | 45.69 | 63.42 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | Si:H | SiO2 | Si:H | SiO2 | Si:H |
| Thickness (nm) | 65.25 | 117.06 | 72.66 | 61.09 | 45.85 |
| 21 | 22 | 23 | 24 | 25 | |
| Material | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Thickness (nm) | 61.81 | 71.56 | 107.26 | 71.4 | 61.87 |
| 26 | 27 | 28 | 29 | 30 | |
| Material | Si:H | SiO2 | Si:H | SiO2 | Si:H |
| Thickness (nm) | 47.55 | 52.23 | 73.93 | 131.17 | 69.77 |
| 31 | 32 | 33 | 34 | 35 | |
| Material | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Thickness (nm) | 50.78 | 37.72 | 89.25 | 89.18 | 93.91 |
Table 1
Table 2 shows the parameter of 3 each material layer of the 2nd IR film layers：
| 1 | 2 | 3 | 4 | 5 | |
| Material | SiN | Si:H | SiN | Si:H | SiN |
| Thickness (nm) | 234.38 | 117.14 | 73.25 | 265.97 | 108.87 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | Si:H | SiN | Si:H | SiN | Si:H |
| Thickness (nm) | 101.51 | 66.42 | 532.95 | 100.88 | 100.09 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | SiN | Si:H | SiN | Si:H | SiN |
| Thickness (nm) | 76.74 | 333.25 | 92.54 | 97.93 | 90.68 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | Si:H | SiN | Si:H | SiN | Si:H |
| Thickness (nm) | 534.73 | 68.59 | 101.83 | 93.7 | 244.39 |
| 21 | 22 | 23 | 24 | 25 | |
| Material | SiN | Si:H | SiN | Si:H | SiN |
| Thickness (nm) | 22.75 | 281.39 | 98.79 | 209.72 | 120.26 |
| 26 | 27 | 28 | 29 | 30 | |
| Material | Si:H | SiN | Si:H | SiN | Si:H |
| Thickness (nm) | 273.95 | 75.66 | 89.02 | 139.33 | 128.66 |
| 31 | 32 | 33 | |||
| Material | SiN | Si:H | SiN | ||
| Thickness (nm) | 428.84 | 113.17 | 87.69 |
Table 2
As shown in Figure 3 and Figure 4, with reference to the optical filter of each conditional parameter setting present invention in embodiment 1, in 800-1200nm
In wave-length coverage, the first IR film layers 2 of the invention and the 2nd IR film layers 3 all have a passband wave band, two cut-off wave bands and
Two transition wave bands, i.e., along from the direction of 800nm-1200nm, the first IR film layers 2 and the 2nd IR film layers 3 have successively respectively
End wave band, transition wave band, passband wave band, transition wave band and cut-off wave band.Passband wave band refer to light can by wave band,
Cut-off wave band refers to the intransitable wave band of light, and little bellow section is located between cut-off wave band and passband wave band.
As shown in figure 5, the optical filter of the present invention changes from 0 ° within the scope of 30 ° in incident angle, passband band center wave
Long drift value changes from 20 ° within the scope of 30 ° in 7nm between 13nm, and in incident angle, and incident angle often changes
1 °, the drift value of centre wavelength is respectively less than 5nm.
According to the optical filter of each parameter setting present invention of embodiment 1, it can ensure that the optical filtering of the present invention is put down half is high
Overall with value is less than 114nm, and the overall thickness of the first IR film layers 2 and the 2nd IR film layers 3 is less than 8 microns.
Embodiment 2：
In the present embodiment, along the direction far from glass substrate 1, the structure of the first IR film layers 2 of optical filter is (LH) *
N, L, N=11.In the present embodiment, the first high refractive index material layer 22 uses layer of hydrogenated, the first low refractive index material layer 21
Using Si3N4, the overall thickness of the first IR film layers 2 is 2.3 μm.Along the direction far from glass substrate 1, the 2nd IR films of optical filter
The structure of layer 3 is (L2H2)*n、L2, n=17.Second high refractive index material layer 32 of the 2nd IR film layers 3 uses layer of hydrogenated, the
Two low refractive index material layers use Si3N4, the thickness of the 2nd IR film layers 3 is 4.62 μm.
Table 3 shows the parameter of 2 each material layer of the first IR film layers：
| 1 | 2 | 3 | 4 | 5 | |
| Material | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Thickness (nm) | 30 | 131.01 | 283.43 | 127.61 | 57 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Thickness (nm) | 34.47 | 155.88 | 74.23 | 45.22 | 135.76 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Thickness (nm) | 166.02 | 58.13 | 62.64 | 72.5 | 69.7 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Thickness (nm) | 144.33 | 140.18 | 52.96 | 102.07 | 30 |
| 21 | 22 | 23 | |||
| Material | Si3N4 | Si:H | Si3N4 | ||
| Thickness (nm) | 90.29 | 51.89 | 181.98 |
Table 3
Table 4 shows the parameter of 3 each material layer of the 2nd IR film layers：
| 1 | 2 | 3 | 4 | 5 | |
| Material | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Thickness (nm) | 234.05 | 73.12 | 193.41 | 79.58 | 113.2 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Thickness (nm) | 196.33 | 111.74 | 100.62 | 86 | 115.42 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Thickness (nm) | 107 | 64.44 | 112.56 | 64.98 | 107.61 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Thickness (nm) | 128.77 | 64.31 | 87.54 | 111.36 | 199.79 |
| 21 | 22 | 23 | 24 | 25 | |
| Material | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Thickness (nm) | 114.06 | 151.56 | 63.51 | 277.82 | 109.72 |
| 26 | 27 | 28 | 29 | 30 | |
| Material | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Thickness (nm) | 66.15 | 106.45 | 365 | 340.12 | 78.77 |
| 31 | 32 | 33 | 34 | 35 | |
| Material | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Thickness (nm) | 110.3 | 226.9 | 110.56 | 95.19 | 45.38 |
Table 4
As shown in Figure 6 and Figure 7, with reference to the optical filter of each conditional parameter setting present invention in embodiment 2, in 800-1200nm
In wave-length coverage, the first IR film layers 2 of the invention and the 2nd IR film layers 3 all have a passband wave band, two cut-off wave bands and
Two transition wave bands, i.e., along from the direction of 800nm-1200nm, the first IR film layers 2 and the 2nd IR film layers 3 have successively respectively
End wave band, transition wave band, passband wave band, transition wave band and cut-off wave band.Passband wave band refer to light can by wave band,
Cut-off wave band refers to the intransitable wave band of light, and little bellow section is located between cut-off wave band and passband wave band.
As shown in figure 8, the optical filter of the present invention changes from 0 ° within the scope of 30 ° in incident angle, passband band center wave
Long drift value changes from 20 ° within the scope of 30 ° in 7nm between 13nm, and in incident angle, and incident angle often changes
1 °, the drift value of centre wavelength is respectively less than 5nm.
According to the optical filter of each parameter setting present invention of embodiment 2, it can ensure that the optical filtering of the present invention is put down half is high
Overall with value is less than 114nm, and the overall thickness of the first IR film layers 2 and the 2nd IR film layers 3 is less than 8 microns.
Embodiment 3：
In the present embodiment, along the direction far from glass substrate 1, the structure of the first IR film layers 2 of optical filter is (LH) *
N, L, N=11.In the present embodiment, the first high refractive index material layer 22 uses layer of hydrogenated, the first low refractive index material layer 21
Using Si3N4, the overall thickness of the first IR film layers 2 is 2.3 μm.Along the direction far from glass substrate 1, the 2nd IR films of optical filter
The structure of layer 3 is (L2H2)*n、L2, n=15.Second high refractive index material layer 32 of the 2nd IR film layers 3 uses layer of hydrogenated, the
Two low refractive index material layers use mixing material, in the present embodiment, mixing material Si3N4And SiO2Mixture, second
The thickness of IR film layers 3 is 5.56 μm.
Table 5 shows the parameter of 2 each material layer of the first IR film layers：
Table 5
Table 6 shows that the parameter of 3 each material layer of the 2nd IR film layers, wherein Mixture indicate Si3N4And SiO2Mixing
Object：
| 1 | 2 | 3 | 4 | 5 | |
| Material | Mixture | Si:H | Mixture | Si:H | Mixture |
| Thickness (nm) | 69.62 | 12.74 | 214.29 | 265.68 | 79.66 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | Si:H | Mixture | Si:H | Mixture | Si:H |
| Thickness (nm) | 97.01 | 151.83 | 318.68 | 101.01 | 94.21 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | Mixture | Si:H | Mixture | Si:H | Mixture |
| Thickness (nm) | 114.71 | 220.97 | 119.49 | 223.57 | 124.11 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | Si:H | Mixture | Si:H | Mixture | Si:H |
| Thickness (nm) | 618.99 | 133.99 | 85.8 | 93.68 | 521.8 |
| 21 | 22 | 23 | 24 | 25 | |
| Material | Mixture | Si:H | Mixture | Si:H | Mixture |
| Thickness (nm) | 167.29 | 67.96 | 135.11 | 265.1 | 123.16 |
| 26 | 27 | 28 | 29 | 30 | |
| Material | Si:H | Mixture | Si:H | Mixture | Si:H |
| Thickness (nm) | 73.7 | 191.03 | 450.26 | 213.17 | 20.19 |
| 31 | |||||
| Material | Mixture | ||||
| Thickness (nm) | 191.98 |
Table 6
As shown in Figure 9 and Figure 10, with reference to the optical filter of each conditional parameter setting present invention in embodiment 3, in 800-
In 1200nm wave-length coverages, the first IR film layers 2 of the invention and the 2nd IR film layers 3 all have a passband wave band, two cut-offs
Wave band and two transition wave bands, i.e., along from the direction of 800nm-1200nm, the first IR film layers 2 and the 2nd IR film layers 3 respectively according to
It is secondary that there is cut-off wave band, transition wave band, passband wave band, transition wave band and cut-off wave band.Passband wave band, which refers to light, to be passed through
Wave band, cut-off wave band refers to the intransitable wave band of light, and little bellow section is located between cut-off wave band and passband wave band.
As shown in figure 11, optical filter of the invention changes from 0 ° within the scope of 30 ° in incident angle, passband band center wave
Long drift value changes from 20 ° within the scope of 30 ° in 7nm between 13nm, and in incident angle, and incident angle often changes
1 °, the drift value of centre wavelength is respectively less than 5nm.
According to the optical filter of each parameter setting present invention of embodiment 3, it can ensure that the optical filtering of the present invention is put down half is high
Overall with value is less than 114nm, and the overall thickness of the first IR film layers 2 and the 2nd IR film layers 3 is less than 8 microns.
The present invention also provides a kind of infrared image sensing systems including optical filter of the present invention.Figure 12 is to schematically show packet
The configuration diagram of infra-red sensing system containing optical filter of the present invention.As shown in figure 12, infrared image sensing system packet of the invention
Include light source unit 4 and receiving unit 5.In the present embodiment, light source unit 4 includes IR transmitting light sources 41 and the first lens assembly
42.Receiving unit 5 includes the second lens assembly 51, the optical filter of the present invention and infrared image sensor 53.In present embodiment
In, IR light sources 41 can be VCSEL (vertical cavity surface emitting laser), LD or LED, and the first lens assembly 42 includes near infrared light
Collimate camera lens and diffractive-optical element.Ordinary optical camera lens may be used in second lens assembly 51.The infrared image of the present invention passes
The workflow of sensing system is as follows：
IR light sources 41 are opened, to 6 throw light of face/hand, the second lens assembly 51 after the first lens assembly 42 collimation
Image is shot, is calculated by algorithm by infrared image sensor 53 and generates 3D rendering, carries out recognition of face or gesture identification.Due to
The presence of optical filter 52 of the present invention, when shooting can with anti-reflection near infrared light, end the light of its all band, so as to improve most
Whole recognition of face, gesture identification precision.
The foregoing is merely the schemes of the present invention, are not intended to restrict the invention, for the technology of this field
For personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (12)
1. a kind of optical filter, including glass substrate (1) and the first IR that is coated on opposite two surfaces of the glass substrate (1)
Film layer (2) and the 2nd IR film layers (3), which is characterized in that
Along the direction far from the glass substrate (1), the first IR film layers (2) include alternately being coated with the first low-refraction material
The bed of material (21) and the first high refractive index material layer (22), the 2nd IR film layers (3) include the second low-refraction being alternately coated with
Material layer (31) and the second high refractive index material layer (32)；
The outermost layer of the first IR film layers (2) be the first low refractive index material layer (21), the 2nd IR film layers (3) it is outermost
Layer is the second low refractive index material layer (31).
2. optical filter according to claim 1, which is characterized in that within the scope of 800-1200nm, the first IR film layers
(2) and the 2nd IR film layers (3) all have a passband wave band, two transition wave bands and two cut-off wave bands, the passband
Wave band is located between two cut-off wave bands, and the little bellow section is between the passband wave band and the cut-off wave band；
The passband wave band has centre wavelength, and in the range of incidence angle changes from 0 ° to 30 °, in the passband wave band
Heart wavelength shift is between 7nm between 13nm.
3. optical filter according to claim 2, which is characterized in that in the range of incident angle changes from 20 ° to 30 °,
Incidence angle often changes 1 °, and the drift value of the centre wavelength of the passband wave band is less than 5nm.
4. optical filter according to claim 2 or 3, which is characterized in that the transmitance of the passband wave band is more than 90%, institute
The transmitance for stating cut-off wave band is less than 0.1%.
5. optical filter according to claim 1, which is characterized in that adjacent first low refractive index material layer (21) with
The ratio of the physical thickness of first high refractive index material layer (22) is in 0.01 to 100 range；
Adjacent second low refractive index material layer (31) and the physical thickness of second high refractive index material layer (32)
Ratio is in 0.01 to 100 range.
6. optical filter according to claim 1 or 5, which is characterized in that within the scope of 800nm to 1200nm, described first
The refractive index of low refractive index material layer (21) and second low refractive index material layer (31) is respectively less than 3, the described first high refraction
Rate material layer (22) and the refractive index of second high refractive index material layer (32) are all higher than 3.
7. optical filter according to claim 6, which is characterized in that first low refractive index material layer (21) and described
The material of two low refractive index material layers (31) is selected from SiO2、SiN、Si2N、Si2N3、Si3N4In it is one or more.
8. optical filter according to claim 6, which is characterized in that first high refractive index material layer (22) and described
Two high refractive index material layers (32) are layer of hydrogenated, and the extinction coefficient in 800-1200nm wave-length coverages is less than 0.002,
Refractive index at 850nm is more than 3.6, and the refractive index at 940nm is more than 3.55.
9. optical filter according to claim 8, which is characterized in that the layer of hydrogenated is that sputtering reaction is coated with material layer,
Ranging from 80-300 degrees Celsius of sputter temperature, hydrogen flowing quantity 10-50sccm, sputter rate 0.1nm/s-1nm/s.
10. optical filter according to claim 1, which is characterized in that the first IR film layers (2) and the 2nd AR film layers
(3) overall thickness is less than 8 microns.
11. optical filter according to claim 1, which is characterized in that the full width at half maximum value of the optical filter is less than 114nm.
12. a kind of infrared image sensing system including the optical filter as described in claim any one of 1-11, which is characterized in that packet
Light source unit (4) and receiving unit (5) are included,
The light source unit (4) includes IR transmitting light sources (41) and the first lens assembly (42)；
The receiving unit (5) includes the second lens assembly (51), optical filter (52) and infrared image sensor (53).
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