CN1087444A - Multi-layer high-voltage large-capacity ceramic capacitor and encapsulating process and mould - Google Patents

Abstract

A kind of multi-layer high-voltage large-capacity ceramic capacitor and encapsulating process and particular manufacturing craft belong to ceramic electron element manufacturing technology and device.This capacitor adopts energy high pressure resistant multi-disc parallel technology and public electrode structure; In order to seal densification, adopt special-purpose encapsulating mold and negative pressure drainage new technology; For improving rate of finished products, monolithic adopts multilayer dielectric film hot pressing to form.The characteristics of ceramic capacitor of the present invention are withstand voltage height, and capacitance is big, for example 0.15 μ F/2kV, 1 μ F/2.1kV, 10 μ F/5kV.And volume is little, function admirable.Can be widely used in industrial and mining enterprises' automation, defence and military, electronic instrument and equipment, reach new and high technology industries such as household electrical appliances.

Description

Multi-layer high-voltage large-capacity ceramic capacitor and encapsulating process and mould

The present invention relates to a kind of manufacture method and encapsulating process and mould of multi-layer high-voltage large-capacity ceramic capacitor.

Capacitor is one of primary element of consumption maximum in the electronic technology, has in each field of computer, information technology, automation and household electrical appliance very widely to use.Especially ceramic capacitor owing to adopted the pottery of excellent performance to make dielectric material, has occupied critical role in electronic technology, replaces the capacitor of other kinds just step by step.The development of modern high technology has proposed more and more higher requirement to capacitor, for example miniature, light weight, multi-functional, highly reliable, high stable etc., and this just requires capacitor to reform to some extent on structural design, manufacture method and technology and innovate.As everyone knows, existing high voltage ceramic capacitor (comprising the mesohigh ceramic capacitor) is a single chip architecture, it is after burning infiltration one deck silver electrode on two first type surfaces of the ceramic mating plate behind the sintering (being generally round), and welding lead is more finally sealed with the insulation fire proofing and formed.Because ceramic material mechanical strength height, can not resemble any coiling the organic media material, therefore, this ceramic capacitor capacity is less, maximum also has only 0.022 μ F(F characteristic).Monolithic capacitor can be done capacity bigger, but proof voltage is very low, is generally tens volts, and the highest have only about 100 volts.

The present invention seeks to attempt to manufacture and design a kind of high pressure resistant, jumbo ceramic capacitor, and a kind of particular manufacturing craft and new encapsulating process are provided.

Ceramic capacitor of the present invention is designed to the high-tension multi-disc parallel-connection structure of ability.Each ceramic dielectric monolithic is square or is round, two first type surface silver coating slurry, burning infiltration electrode (or other thin metal layer), two electrodes are determined the staggered one-sided full limit of direction along one, each monolithic electrode is corresponding one by one, changes mutually successively, with conducting resinl or secondary silver ink firing technology each monolithic is combined.Constitute one electrode layer-interlayer electrode between per like this two media, be followed successively by the intervention shape, interleave is connected on the public electrode that is positioned at both sides respectively, is similar to the parallel connection of a plurality of monolithic electric capacity.Two public electrodes extend to the outside by outer encapsulated layer along same end.Two kinds of methods have been taked in the manufacturing of this capacitor monolithic, for withstand voltage lower, employing that the monolithic area is less dry pressuring forming process routinely; And bigger for the monolithic area, withstand voltage higher employing the monolithic multilayer structure, promptly adopt routinely filming technology (curtain coating, prick film or crowded film), be processed into the film that thickness is 50～100 μ m, again that multilayer film hot pressing is in blocks.Can improve the withstand voltage and rate of finished products of monolithic like this.For avoiding public electrode and interlayer electrode connection place to seal the gap (this kind gap easily punctures, and influences withstand voltage) that material leaves, special-purpose encapsulating mold and negative pressure drainage encapsulating process have correspondingly been used owing to being difficult for soaking the pool.The mold shell body can be made cylindric or the square tube shape because of the capacitor shape, and metal material is made.The side wall of outer shell middle and lower part has bleeding point and charging aperture relatively, and switch is housed respectively.In the shell there be and the closed mutually material baffle of outer casing inner wall the first half, this plate is linked to each other with loam cake by the fixed lever of adjustable length.Have two holes on the material baffle symmetrically, geometrical clamp is equipped with in the perforate top.When sealing, first two public electrodes with encapsulation piece (capacitor core) pass the hole on the material baffle, it is fixing in position (to seal degree of depth decision by the public electrode root) with geometrical clamp, regulates the connecting rod of material baffle and loam cake, makes encapsulation piece be suspended on certain altitude in the housing.Sealing gasket and bayonet socket are arranged between loam cake and the housing, promptly salable after bayonet socket is stuck.Open bleeding point and bleed, make envelope space formation negative pressure in the mould, when reaching certain numerical value, close bleeding point, open charging aperture, the pulpous state encapsulating material enters envelope space, because negative pressure is sealed material and can be enriched.

The withstand voltage height of ceramic capacitor of the present invention, capacity is big, has enlarged the application of ceramic capacitor, can replace electrolytic capacitor (for example microwave oven) on some precision electronic device equipment; (for example electric blasting device of tertiary oil recovery and geological survey) is applied in some new and high technologies; Adopt the present invention, also can obviously improve the overall performance of ceramic capacitor or reduce the external form volume of ceramic capacitor.

Fig. 1 is the structural representation of capacitor of the present invention, and wherein 1 is encapsulated layer, the 2nd, and ceramic dielectric body sheet, the 3rd, interlayer electrode, the 4th, public electrode.Fig. 2 is containment device (mould and encapsulation piece) figure.Wherein 6 is aspirating hole and switch, and 7 is charging aperture and switch, the 8th, and mold shell, the 9th, material baffle, 10 is encapsulation piece, 11 is the encapsulation piece public electrode, the 12nd, loam cake, the 13rd, sealing gasket, the 14th, adjustable link, the 15th, material baffle perforate and geometrical clamp, the 16th, bayonet socket.Fig. 3 is a dielectric monolithic electrode schematic diagram, and 1 and 2 is two staggered electrode layers of along continuous straight runs on dielectric two first type surfaces, the 3rd, and dielectric.

The ceramic capacitor that embodiment 1. adopts the parallel connection of 11 rectangle monolithics to make, capacity is 0.15 μ F, operating voltage 2KV, experimental voltage, 4KV kept 1 minute, and temperature characterisitic is 2E4, and overall dimensions are 25 * 15 * 20(mm).

Embodiment 2. adopts 15 ceramic capacitors that round monolithic parallel connection is made, and capacity is 1 μ F, operating voltage 2.1KV, and experimental voltage 4KV kept 1 minute, temperature characterisitic 2F4, overall dimensions φ 45 * 30(mm) is cylindric.

The ceramic capacitor that embodiment 3. adopts 51 round monolithics (the thick 1.8mm.20 tunic of sheet is pressed into) to make.Capacity is 10 μ F, operating voltage 5KV.Experimental voltage 7.5KV kept 1 minute, temperature characterisitic 2F4, overall dimensions φ 70 * 130(mm) column types.

Claims (6)

1, a kind of multi-layer high-voltage large-capacity ceramic capacitor, it is characterized by each dielectric sheet two first type surface along determining the staggered silver electrode of firing of direction, monolithic electrode is corresponding one by one, change mutually successively, with conducting resinl or secondary silver ink firing technology monolithic is integrally combined, electrode between cambium layer is the intervention shape in the middle of two dielectric sheets, be connected in respectively on the public electrode of both sides, two public electrodes reach the outside by outer encapsulated layer at same end.

2, by the dielectric monolithic of the described ceramic capacitor of claim 1, it is characterized by described dielectric monolithic, be sandwich construction (promptly forming) in case of necessity with multilayer dielectric film hot pressing.

3, a kind of special-purpose encapsulating mold that is used for the described capacitor of claim 1 is characterized by this mould and is made by metal material, and external form is cylindric or the square tube shape.The below has charging aperture and bleeding point relatively in its sidewall, controlled by charging aperture switch and bleeding point switch.Casing upper half has and the closed mutually metal material baffle of its inwall, and this plate is connected with loam cake by the connecting rod of adjustable in length, regulates this connecting rod, the distance between scalable loam cake and material baffle.

4, according to the described encapsulating mold of claim 3, it is characterized by that symmetry has two holes on the described material baffle, the public electroplax of the size in hole and shape and encapsulation piece is complementary.

5,, it is characterized by described perforate top and have geometrical clamp by the perforate on claim 3 and the 4 described encapsulating mold material baffles.

6, a kind of encapsulating process that uses the described encapsulating mold of claim 3 is that public electrode with encapsulation piece passes the perforate on the mould material baffle, and the requirement of sealing the degree of depth by the electrode root is in position fixing.Adjust the distance between loam cake and material baffle, make encapsulation piece put suitable height in the mould, loam cake and housing bayonet socket is stuck, seal naturally by sealing gasket.It is characterized by and open bleeding point earlier and bleed, make envelope space form negative pressure, close bleeding point afterwards, open charging aperture, packaging slurry flows into naturally, carries out densification and seals.

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