CN108735866A - It is grown in InN nano-pillar epitaxial wafers and preparation method thereof in Si/ graphene compound substrates - Google Patents
It is grown in InN nano-pillar epitaxial wafers and preparation method thereof in Si/ graphene compound substrates Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 109
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 91
- 239000002061 nanopillar Substances 0.000 title claims abstract description 81
- -1 graphene compound Chemical class 0.000 title claims abstract description 52
- 235000012431 wafers Nutrition 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 54
- 230000012010 growth Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- PYTMYKVIJXPNBD-UHFFFAOYSA-N clomiphene citrate Chemical compound [H+].[H+].[H+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.C1=CC(OCCN(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C(Cl)C1=CC=CC=C1 PYTMYKVIJXPNBD-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000002604 ultrasonography Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 241000549556 Nanos Species 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 150000004767 nitrides Chemical class 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003863 metallic catalyst Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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Abstract
The invention belongs to the technical field of semiconductor devices, discloses and be grown in InN nano-pillar epitaxial wafers and preparation method thereof in Si/ graphene compound substrates.InN nano-pillar epitaxial wafers in Si/ graphene compound substrates are grown in, include Si substrates, graphene layer, In metal nano microballoon layers and InN nano-pillar layers successively from the bottom to top.The invention also discloses the preparation methods for the InN nano-pillar epitaxial wafers being grown in Si/ graphene compound substrates.The nanometer column diameter of the present invention is uniform, high order, solves the technical barrier that InN generates a large amount of dislocations because existing between Si compared with Macrolattice mismatch wherein simultaneously, greatly reduce the defect concentration of InN nano-pillar epitaxial layers, the advantageous radiation recombination efficiency for improving carrier, the performance for improving InN nano-pillar epitaxial wafers, can increase substantially the luminous efficiency of nitride device such as semiconductor laser, light emitting diode.
Description
Technical field
The present invention relates to InN nano-pillars epitaxial wafer and preparation methods, more particularly to are grown in Si/ graphene compound substrates
InN nano-pillar epitaxial wafers and preparation method thereof.
Background technology
III-V nitride is excellent due to stable physicochemical properties, high thermal conductivity and high electron saturation velocities etc.
Point is widely used in light emitting diode (LED), laser and opto-electronic device etc..In III-V nitride, nitridation
Indium (InN) is more and more interested to researchers due to its own unique advantage.In III nitride semiconductor, InN
Get over speed with minimum effective electron mass, highest carrier mobility and highest saturation, for Developing High-speed electronics
Device is extremely advantageous.Moreover, InN has minimum direct band gap, and energy gap is about 0.7eV, this allows for nitrogenizing
The light emitting region of object based light-emitting diode is widened from ultraviolet (6.2eV) near infrared region (0.7eV), in infrared laser, entirely
Spectrum is shown and high conversion efficiency solar cell etc. illustrates great application prospect.With other III-V nitrides half
Conductor material is compared, InN materials except have the advantages that it is above-mentioned in addition to, nano level material quantum effect, interfacial effect, volume effect
It answers, dimensional effect etc. also shows more novel characteristics.
Currently, III-V nitride semiconductor devices is mainly based upon epitaxial growth and preparation in Sapphire Substrate.So
And sapphire can not have since thermal conductivity is low using the heat that sapphire is generated as the high power nitride semiconductor device of substrate
Effect release causes heat is constantly accumulative to make temperature rise, the deterioration of Accelerate nitriding object semiconductor devices, that there are device performances is poor,
The shortcomings of short life.In contrast, the thermal conductivity of Si is higher than sapphire, and cost is relatively low.High-performance, low is prepared on a si substrate
The nitride compound semiconductor device of cost is inevitable development trend.However, growth diameter is uniform on a si substrate, order is high
InN nano-pillars be prepare high-performance nitride semiconductor light electrical part first put forward condition.Due to the lattice mismatch between Si and InN
Greatly；Meanwhile in early growth period, the difference of the In and N atom distribution proportions of substrate surface causes the InN nano-pillars of growth to have
Highly, situations such as path length is uneven, order is poor.
Most use directly grows InN nano-pillars on a si substrate at present, and the nano-pillar that this growing method is obtained is straight
Diameter is inhomogenous, that is, the diameter of top and bottom is inconsistent, in the nano-pillar of the patterns such as inverted pyramid, softball bat.According to
In, Ni, Au etc. carry out the growth of InN nano-pillars as catalyst, and the metals such as In, Ni and Au as catalyst are deposited after growth
It is the top of InN, when subsequently device was fabricated, needs the metallic catalyst on top to remove, increase device technology
Complexity.
Invention content
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the purpose of the present invention is to provide one kind being grown in Si/ stones
InN nano-pillar epitaxial wafers in black alkene compound substrate.Graphene has extraordinary heat-conductive characteristic, pure flawless single layer stone
The thermal coefficient of black alkene is up to 5300W/mK, is the highest carbon material of thermal coefficient so far.In addition, graphene is with excellent
The characteristics such as optics, electricity, mechanics, on a si substrate composite graphite alkene carry out the growth of InN nano-pillars as growth substrates,
Help to further expand the application prospect of InN nano-pillars.
The InN nano-pillar epitaxial wafers of the present invention include In metal nano microballoons, by the compound graphene of Si substrates
In metal nano microballoons are deposited, In metal nano microballoons have the following effects that and act on：First, In metal nanos microballoon is used as
In supplementary sources during InN nanocolumn growths are conducive to forming core and the growth of the uniform InN nano-pillars of high order, diameter；Its
It is secondary, avoid the nitrogen plasma with high-energy in molecular beam epitaxy accretion method from being made to graphene in InN nano-pillar nucleation points
At destruction；Third solves the technology hardly possible that InN generates a large amount of dislocations because existing between Si compared with Macrolattice mismatch wherein
Topic, greatly reduces the defect concentration of InN nano-pillar epitaxial layers, favorably improves the radiation recombination efficiency of carrier, can be substantially
Degree improves the luminous efficiency of nitride device such as semiconductor laser, light emitting diode.The present invention Si substrates and nano-pillar it
Between set graphene layer, graphene has special structure, and lattice mismatch has certain work between Si substrates and nano-pillar
With.
It is grown in InN nano-pillar epitaxial wafers in Si/ graphene compound substrates another object of the present invention is to provide above-mentioned
Preparation method.The method of the present invention has growth technique simple, the cheap advantage of nano-pillar morphology controllable, manufacturing cost.
The purpose of the present invention is achieved through the following technical solutions：
InN nano-pillar epitaxial wafers in Si/ graphene compound substrates are grown in, include Si substrates, graphite successively from the bottom to top
Alkene layer, In metal nano microballoon layers and InN nano-pillar layers.
The graphene layer is single layer or multi-layer graphene.
A diameter of 20-70nm of In metal nano microballoons.
The a diameter of 30-80nm of InN nano-pillars in the InN nano-pillars layer.
The preparation method for growing InN nano-pillars epitaxial wafer on a si substrate, includes the following steps：
(1) Si substrates clean；
(2) graphene layer is prepared on a si substrate, obtains Si/ graphene compound substrates；
(3) In metal nano microballoon layers are deposited：Using molecular beam epitaxial growth technique, in Si/ graphene compound substrates
In films are deposited on graphene layer, and are annealed, and In metal nano microballoons are obtained；
(4) growth of InN nano-pillars layer：Using molecular beam epitaxial growth technique, underlayer temperature is controlled at 500~700 DEG C,
It is 4.0~10.0 × 10 in the pressure of reative cell-5Under the conditions of Torr, V/III ratio are 30~40, in the In that step (3) obtains
The uniform InN nano-pillars of growth diameter on metal nano microballoon.
The condition for depositing In films in step (3) on the graphene layer of Si/ graphene compound substrates is underlayer temperature control
For system at 400~550 DEG C, the pressure of reative cell is 5.0~6.0 × 10-10Torr；
The temperature annealed in step (3) is 400~550 DEG C, and annealing time is 50~300 seconds.
Step (1) the substrate cleaning, specially：
It is 1 that Si substrates, which are put into volume ratio,:Ultrasound 1~2 minute in 20 HF and deionized water mixed solution, removal silicon lining
Bottom surface oxide and pickup particle place into ultrasound 1~2 minute in deionized water, surface impurity are removed, with high-purity dry nitrogen
Air-blowing is dry.
Si/ graphene compound substrates described in step (2) grow graphene layer on substrate by chemical vapour deposition technique
Or graphene layer is transferred on Si substrates；
The specific preparation process for growing graphene layer on substrate by chemical vapour deposition technique is：By the Si through over cleaning
Substrate is placed in chemical vapor depsotition equipment (CVD), carries out the growth of graphene, and using methane as carbon source, hydrogen is carrier gas,
Growth temperature is 600-1000 DEG C, forms Si/ graphene compound substrates.The graphene number of plies of growth is single layer or multilayer.
The flow of methane is 0.4~15sccm, and the volume flow of hydrogen is 10-30cm3/min。
Graphene layer is transferred on Si substrates and is specifically prepared as：Graphene is grown on copper foil, in ferric chloride solution
Middle immersion removes copper foil, obtains graphene layer；The graphene layer of acquisition is transferred on Si substrates, it is compound to form Si/ graphenes
Substrate.
The direct of In metal nano microballoons in the In metal nanos microballoon layer is 20-70nm.
The a diameter of 30-80nm of InN nano-pillars in the InN nano-pillars layer.
Compared with prior art, the present invention has the following advantages and beneficial effect：
(1) the InN nano-pillar epitaxial wafers being grown in Si/ graphene compound substrates of the invention, pass through Si substrate overlyings
Lid graphene solves the technical barrier that InN generates a large amount of dislocations because existing between Si compared with Macrolattice mismatch wherein, greatly
The big defect concentration for reducing InN nano-pillar epitaxial layers, favorably improves the radiation recombination efficiency of carrier, can increase substantially
The luminous efficiency of nitride device such as semiconductor laser, light emitting diode.
(2) the InN nano-pillar epitaxial wafers being grown in Si/ graphene compound substrates of the invention, using Si as support
Substrate, Si substrates have the advantages that easily remove, and the InN nano-pillar semiconductor epitaxial on pieces after removing Si substrates make electricity
Pole is conducive to the nitride compound semiconductor device for preparing vertical structure.Si substrates have radioresistance, thermal conductivity height, high temperature resistant, change simultaneously
The advantages that property is relatively stablized, intensity is higher is learned, there is very high reliability, the InN nano-pillars based on Si/ graphene compound substrates
Epitaxial wafer can be widely applied to high-temperature device.
(3) present invention uses Si/ graphene compound substrates, and first In is deposited simultaneously on a si substrate using molecular beam epitaxy technique
Annealing forms In metal nano microballoons, and In metal nano microballoon of the pre-deposition in Si/ graphene compound substrates is used as and is received in InN
In supplementary sources in rice column growth course avoid InN nano-pillars in growth course since the sources In deficiency causes at the top of appearance directly
Diameter is more than base diameter, and the inhomogenous nano-pillar of diameter also avoids the nitrogen etc. with high-energy in molecular beam epitaxy accretion method
Gas ions damage graphene in InN nano-pillar nucleation points, are conducive to the uniform InN nano-pillars of high order, diameter
Forming core and growth, solve the technical barrier for being difficult to the uniform InN nano-pillars of direct growth diameter on a si substrate.
(4) growth technique of the invention is unique and simple and practicable, has repeatability.
Description of the drawings
Fig. 1 is the structural schematic diagram for the InN nano-pillar epitaxial wafers of the present invention being grown in Si/ graphene compound substrates；
1-Si substrates, 2- graphene layers, 3-In metal nano microballoons layer, 4-InN nano-pillar layers；
Fig. 2 is the scanning electron microscope for depositing In metal nano microballoons in embodiment 1 in Si/ graphene compound substrates
Photo；
Fig. 3 is the InN deposited on In metal nano microballoon layers in Si/ graphene compound substrates in embodiment 1
The electron scanning micrograph of nano-pillar；
Fig. 4 is the high-resolution transmission for the InN nano-pillar epitaxial wafers of embodiment 1 being grown in Si/ graphene compound substrates
Electron micrograph.
Specific implementation mode
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
The structural schematic diagram such as Fig. 1 institutes for being grown in InN nano-pillar epitaxial wafers in Si/ graphene compound substrates of the present invention
Show, includes Si substrates 1, graphene layer 2, In metal nano microballoons layer 3 and InN nano-pillars layer 4 successively from the bottom to top.The InN
The a diameter of 30-80nm of InN nano-pillars in nano-pillar layer.
Embodiment 1
The InN nano-pillar epitaxial wafers being grown in Si/ graphene compound substrates of the present embodiment include successively from the bottom to top
Si substrates, graphene layer, In metal nano microballoon layers and InN nano-pillar layers.
The preparation method of the InN nano-pillar epitaxial wafers being grown in Si/ graphene compound substrates of the present embodiment, including with
Lower step：
(1) selection of substrate and its crystal orientation：Using common Si substrates；
(2) substrate cleans：It is 1 that Si substrates, which are put into volume ratio,:2 points of ultrasound in 20 HF and deionized water mixed solution
Clock removes Si substrate surfaces oxide and pickup particle, places into ultrasound 2 minutes in deionized water, surface impurity is removed, with height
Pure drying nitrogen drying；
(3) preparation of Si/ graphenes compound substrate：It is big that 3 layer graphenes grown on copper foil are cut into 1 × 1cm
It is small, removal copper foil is impregnated in ferric chloride solution, and the graphene layer of acquisition is transferred on Si substrates, Si/ graphenes are prepared into
Compound substrate；
(4) In metal nano microballoons are deposited：Using molecular beam epitaxial growth technique, underlayer temperature is controlled at 400 DEG C, anti-
It is 6.0 × 10 to answer the pressure of room-10Under the conditions of Torr, In films are deposited in Si/ graphene compound substrates, and 400 DEG C of original positions
Annealing 50 seconds, forms the In metal nano microballoons of a diameter of 30-50nm；
(5) growth of the uniform InN nano-pillars of diameter：Using molecular beam epitaxial growth technique, underlayer temperature is controlled 600
DEG C, it is 6.0 × 10 in the pressure of reative cell-5Under the conditions of Torr, V/III ratio are 30, in the Si/ graphenes that step (3) obtains
The InN nanometers that growth top and bottom diameter is uniform on the In metal nano microballoons of compound substrate, diameter is distributed as 30-50nm
Column.
Fig. 2 is the scanning electron that the embodiment of the present invention 1 deposits In metal nano microballoons in Si/ graphene compound substrates
Microscope photo；As shown in Fig. 2, the present embodiment pre-deposition In metal nano microballoons, diameter in Si/ graphene compound substrates
For the In metal nano microballoon electron scanning micrographs of 30-50nm.
Fig. 3 is that the InN that embodiment 1 deposits on the In metal nano microballoon layers in Si/ graphene compound substrates receives
The electron scanning micrograph of meter Zhu.Shown in Fig. 3, being grown in Si/ graphene compound substrates has high order, diameter equal
One, top shows InN nano-pillar epitaxial wafers prepared by the present invention and has excellent performance without the remaining InN nano-pillars of metal In.Figure
4 be the high resolution transmission electron microscopy for the InN nano-pillar epitaxial wafers of embodiment 1 being grown in Si/ graphene compound substrates
Photo, can be observed that lattice arrangement is neat, show that the nano-pillar crystal quality grown using the present invention is high.
Embodiment 2
The InN nano-pillars epitaxial wafer being grown in Si/ graphene compound substrates of the present embodiment includes successively from the bottom to top
Si substrates, graphene layer, In metal nano microballoon layers and InN nano-pillar layers.
The preparation method of the InN nano-pillar epitaxial wafers being grown in Si/ graphene compound substrates of the present embodiment, including with
Lower step：
(1) selection of substrate and its crystal orientation：Using common Si substrates；
(2) substrate cleans：It is 1 that Si substrates, which are put into volume ratio,:2 points of ultrasound in 20 HF and deionized water mixed solution
Clock removes surface of silicon oxide and pickup particle, places into ultrasound 1 minute in deionized water, surface impurity is removed, with height
Pure drying nitrogen drying；
(3) Si/ graphene compound substrates are prepared：Si substrates are placed in chemical vapor depsotition equipment (CVD), graphite is carried out
The growth of alkene grows the graphene layer that the number of plies is 5 layers, forms Si/ graphene compound substrates；
(4) In metal nano microballoons are deposited：Using molecular beam epitaxial growth technique, underlayer temperature is controlled at 550 DEG C, anti-
It is 6.0 × 10 to answer the pressure of room-10Under the conditions of Torr, In films are deposited in Si/ graphene compound substrates, and anneal in situ
300 seconds, form the In metal nano microballoons of a diameter of 20-70nm；
(5) growth of the uniform InN nano-pillars of diameter：Using molecular beam epitaxial growth technique, underlayer temperature is controlled 700
DEG C, it is 6.0 × 10 in the pressure of reative cell-5Under the conditions of Torr, V/III ratio are 40, in the In metal nanos that step (3) obtains
The InN nano-pillars that growth top and bottom diameter is uniform in the Si/ graphene compound substrates of microballoon, diameter is distributed as 30-80nm.
InN nano-pillars epitaxial wafer in Si/ graphenes compound substrate manufactured in the present embodiment is either in electricity, optical
In matter, or in defect concentration, crystalline quality all with extraordinary performance, test data is close with embodiment 1, herein no longer
It repeats.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (8)
1. being grown in InN nano-pillar epitaxial wafers in Si/ graphene compound substrates, it is characterised in that：Include Si successively from the bottom to top
Substrate, graphene layer, In metal nano microballoon layers and InN nano-pillar layers.
2. being grown in InN nano-pillar epitaxial wafers in Si/ graphene compound substrates according to claim 1, it is characterised in that：Institute
It is single layer or multi-layer graphene to state graphene；The a diameter of 30-80nm of InN nano-pillars in the InN nano-pillars layer.
3. according to the system for being grown in InN nano-pillar epitaxial wafers in Si/ graphene compound substrates described in any one of claim 1~2
Preparation Method, it is characterised in that：Include the following steps：
(1) Si substrates clean；
(2) graphene layer is prepared on a si substrate, obtains Si/ graphene compound substrates；
(3) In metal nano microballoon layers are deposited：Using molecular beam epitaxial growth technique, in the graphite of Si/ graphene compound substrates
In films are deposited on alkene layer, and are annealed, and In metal nano microballoons are obtained；
(4) growth of InN nano-pillars layer：Using molecular beam epitaxial growth technique, underlayer temperature is controlled at 500~700 DEG C, anti-
It is 4.0~10.0 × 10 to answer the pressure of room-5Under the conditions of Torr, V/III ratio are 30~40, in the In metals that step (3) obtains
The uniform InN nano-pillars of growth diameter on nanoparticle.
4. it is grown in the preparation method of InN nano-pillar epitaxial wafers in Si/ graphene compound substrates according to claim 3,
It is characterized in that：The temperature annealed in step (3) is 400~550 DEG C, and annealing time is 50~300 seconds.
5. it is grown in the preparation method of InN nano-pillar epitaxial wafers in Si/ graphene compound substrates according to claim 3,
It is characterized in that：The condition for depositing In films in step (3) on the graphene layer of Si/ graphene compound substrates is underlayer temperature control
For system at 400~550 DEG C, the pressure of reative cell is 5.0~6.0 × 10-10Torr。
6. it is grown in the preparation method of InN nano-pillar epitaxial wafers in Si/ graphene compound substrates according to claim 3,
It is characterized in that：
Step (1) the substrate cleaning, specially：
It is 1 that Si substrates, which are put into volume ratio,:Ultrasound 1~2 minute in 20 HF and deionized water mixed solution, removes silicon substrate table
Face oxide and pickup particle place into ultrasound 1~2 minute in deionized water, surface impurity are removed, with high-purity dry nitrogen air-blowing
It is dry.
7. it is grown in the preparation method of InN nano-pillar epitaxial wafers in Si/ graphene compound substrates according to claim 3,
It is characterized in that：Step (2) the Si/ graphenes compound substrate is grown graphene layer by vapour deposition process or will on substrate
Graphene layer is transferred on Si substrates.
8. it is grown in the preparation method of InN nano-pillar epitaxial wafers in Si/ graphene compound substrates according to claim 3,
It is characterized in that：A diameter of 20-70nm of In metal nano microballoons in the In metal nanos microballoon layer.
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