CN108735833A - A kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array and preparation method thereof - Google Patents
A kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array and preparation method thereof Download PDFInfo
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- 238000001228 spectrum Methods 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000011521 glass Substances 0.000 claims abstract description 72
- 239000004744 fabric Substances 0.000 claims abstract description 67
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000002096 quantum dot Substances 0.000 claims abstract description 33
- 239000012528 membrane Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 59
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 42
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 35
- 229910052733 gallium Inorganic materials 0.000 claims description 35
- 238000004544 sputter deposition Methods 0.000 claims description 35
- 150000002739 metals Chemical class 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 28
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 23
- 229910052786 argon Inorganic materials 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 239000002061 nanopillar Substances 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- -1 octadecylenes Chemical class 0.000 claims description 8
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 7
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 7
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 7
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000005642 Oleic acid Substances 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 235000019441 ethanol Nutrition 0.000 claims description 7
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 7
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 7
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000010792 warming Methods 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 5
- 239000004753 textile Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 52
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 8
- 229910001195 gallium oxide Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/34—Sputtering
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention discloses flexible wide spectrum photodetectors of a kind of organic/inorganic pn-junction nano-array and preparation method thereof, include glass fabric substrate, the β-Ga being set on glass fabric substrate successively2O3Film is set to β-Ga2O3β-Ga on film2O3Nano column array is set to β-Ga2O3Above nano column array and the PFH films in gap, the CdSe quantum dot being set in PFH films, the first Au membrane electrodes being set to above PFH films are set to β-Ga2O3The 2nd Au membrane electrodes above film；The PFH films of inside setting CdSe quantum dot are the organic blue light film of p-type PFH@CdSe quantum dots, the organic blue light film of p-type PFH@CdSe quantum dots and β-Ga2O3Nano column array forms pn-junction structure.The flexible wide spectrum photodetector of invention has response to dark purple outskirt near infrared region spectrum, wide spectrum detectivity with high-responsivity and zero-power characteristic, and performance is stablized, and is quick on the draw, has great application prospect in wearable device, intelligent textile and wide spectrum photodetection field.
Description
Technical field
The present invention relates to a kind of flexible optoelectronic detectors and preparation method thereof, in particular to a kind of organic/inorganic pn-junction to receive
The flexible wide spectrum photodetector and preparation method thereof of rice array.
Technical background
Semiconductor-based optical detector majority is low in short wave ranges responsiveness, and covers the ultraviolet spectral region to near-infrared
Wide range responds photodetector, widely used in fields such as industry automatic control, optic communication, X-ray detection X, sensor monitorings, has
Important social economic value.β-Ga2O3It is a kind of super semiconductor material with wide forbidden band of N-shaped, there is good translucency, in purple
Outer smooth region can reach 80% or more transmitance.Due to β-Ga2O3Energy gap is larger, can only absorb deep ultraviolet light, in order to carry
Its high absorption region to wide spectrum, improves the utilization ratio of light, and it is compound that compound composition is often carried out with narrow bandgap semiconductor material
Material or hetero-junctions.
Promotion with people to wearable electronic demand, flexible, foldable flexible device application is increasingly
Extensively.Common UV photodetector part is all that semiconductive thin film is grown in rigid substrate, such as silicon chip, sapphire and stone
English substrate etc., these devices can not be all bent, and limit the application range of device.Moreover, current most flexible substrate is all
Be macromolecule compound, high temperature can not be born, therefore, select one kind can heat safe flexible substrate prepare gallium oxide material,
To realize the flexible characteristic of gallium oxide photodetector, have great importance.
Invention content
The object of the present invention is to provide a kind of high sensitivity, the organic/inorganic pn-junction nanometers that stability is good, the response time is short
Flexible wide spectrum photodetector of array and preparation method thereof.
Technical solution provided by the invention is：A kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array,
It is characterized in that, including glass fabric substrate, the β-Ga being set on glass fabric substrate successively2O3Film is set to β-
Ga2O3β-Ga on film2O3Nano column array is set to β-Ga2O3(PFH is the PFH films in above nano column array and gap
Poly- 9,9 one dihexyl fluorenes), the CdSe quantum dot being set in PFH films, the first Au thin-film electros being set to above PFH films
Pole is set to β-Ga2O3The 2nd Au membrane electrodes above film；The PFH films of inside setting CdSe quantum dot are p-type PFH@
The organic blue light film of CdSe quantum dot, the organic blue light film of p-type PFH@CdSe quantum dots and β-Ga2O3Nano-pillar battle array
Row form pn-junction structure.
Preferably, the β-Ga2O3Film is as β-Ga2O3The growth substrate of nano column array is located at glass fabric and serves as a contrast
Bottom and β-Ga2O3Between nano column array, the β-Ga2O3The distribution area of nano column array is less than β-Ga2O3The area of film,
β-the Ga2O3Nano column array and the 2nd Au membrane electrodes are located at β-Ga2O3The same side of film.
Preferably, a kind of technical solution of the invention is, the CdSe quantum dot is included in PFH films, and uniformly embedding
Enter β-Ga2O3Between nano column array.
Preferably, another technical solution of the invention is, the CdSe quantum dot is included in PFH films, and uniformly
It is embedded in β-Ga2O3Between nano column array and uniformly it is distributed in β-Ga2O3Above nano column array.
Preferably, the β-Ga2O3A diameter of 100-200nm of nano-pillar is highly 0.8-1.5 μm；The PFH films
Thickness be 1.0-1.5 μm, a diameter of 4-5nm of CdSe quantum dot, β-Ga2O3The thickness of film is 0.2-0.5 μm.
The detector of the present invention, PFH is a kind of organic blue light frequency-doubling material of p-type, is had in 300-450nm spectral regions
Very strong absorption, CdSe are a kind of semiconducting compounds of natural p-type, have good optical property in visible region, and
And β-Ga2O3Pn-junction can be formed with PFH and CdSe, electron hole pair realization is made quickly and efficiently to detach, to improve to wide spectrum
The absorption efficiency of light.
Specifically, the flexible wide spectrum photodetector of a kind of organic/inorganic pn-junction nano-array, to dark purple outskirt
There is response near infrared region spectrum, wide spectrum detectivity and zero-power characteristic with high-responsivity, and flexible and folding
It is folded, it can be applied to the wearable wide spectrum light sensing device of portable.
The invention also includes a kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array,
It is characterized by comprising the following steps：
Step 1 cleans glass fabric substrate, and cleaning process is as follows：Substrate is dipped into acetone, second successively
It each ultrasonic 10 minutes in alcohol, deionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
Glass fabric substrate is positioned over warm table by step 2, and the temperature that warm table is arranged is 100 DEG C, by a Ga
Metal is positioned over above glass fabric substrate, waits for that gallium metal melts, using glass slide that liquid Ga embossed metals is in blocks, cooling
Afterwards, it is for use to form Ga sheet metals/glass fabric substrate；
Step 3, Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga gold obtained by step 2
Belong to piece/glass fabric substrate to be fixed on sample carrier, puts vacuum chamber into；
Step 4, β-Ga2O3The preparation of nano column array：Cavity is vacuumized, argon gas is passed through, adjusts the pressure in vacuum chamber
By force, then it is passed through oxygen, heating Ga sheet metals/glass fabric substrate open Ga2O3Target radio-frequency power supply, is existed using magnetron sputtering method
Growth in situ β-Ga on the gallium drop on gallium metal piece surface2O3Nano column array, wherein Ga2O3Target and glass fabric substrate
Distance be set as 5 centimetres, vacuumize rear chamber pressure be 1 × 10-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8-
1.0Pa, after being passed through oxygen, the pressure of vacuum chamber is adjusted to 103Pa；
Step 5, the preparation of CdSe quantum dot：0.25g CdO, 4-5mL oleic acid and 30-40mL octadecylenes is weighed to be put into
It in the three-necked flask of 100mL, begins to warm up, and is rapidly heated to 120-130 DEG C after vacuumizing 5min, keep the temperature 30min, then lead to
Entering argon gas, is cooled to 30 DEG C hereinafter, weigh 0.05g Se powder again, is added in three-necked flask, 10min is warming up to 220-240 DEG C,
60min postcoolings are kept the temperature to room temperature, finally utilize hexamethylene and absolute ethyl alcohol ultrasonic circulation to clean, for use；
PFH is dissolved in chloroform by step 6, and solution is made, and adds the CdSe quantum dot obtained by a certain amount of step 5,
Mixed solution is formed, the β-Ga for then preparing the mixed solution prepared rotation Tu in step 42O3Above nano column array, system
At organic/inorganic PFH@CdSe/ β-Ga2O3Pn-junction nano-array.
Step 7, using mask plate and by radiofrequency magnetron sputtering technology in PFH films and β-Ga2O3It is each heavy above film
Product layer of Au membrane electrode, wherein sputtering technology condition：It is 1 × 10 to vacuumize rear chamber pressure-4Pa, underlayer temperature are room temperature,
Work atmosphere is Ar gas, operating air pressure 0.8-1.0Pa, sputtering power 60-80W, sputtering time 5min.
Specifically, it is 700-800 DEG C Ga sheet metals/glass fabric substrate temperature to be heated in the step four, is splashed
It is 60-80W to penetrate power, and sputtering time is 1-1.5 hours.
Further, operating air pressure is 0.8Pa, sputtering power 80W in the step seven.
Specifically, step 4 prepares β-Ga using magnetron sputtering method2O3Nano column array, in 700-800 DEG C of high-temperature heating
Under, gallium metal film surface forms gallium metal drop, and β-Ga are grown on gallium metal drop by magnetron sputtering2O3Nano-pillar battle array
Row, meanwhile, slowly oxidation forms β-Ga to gallium metal layer under oxygen atmosphere2O3Film.Wherein, gallium can be urged as self-catalysis agent
Change gallium metal layer and form gallium oxide nano material at high temperature, shorten the reaction time, another aspect gallium metal layer slowly aoxidizes shape
At gallium oxide film, array growth substrate can be used as so that the gallium oxide nano-pillar of formation is orderly, is evenly distributed.
Advantages of the present invention：
1, the PFH@CdSe/ β-Ga prepared by the present invention2O3Pn-junction nano column array is 3 D stereo, be evenly distributed and
Contact area is big, and the utilization ratio of knot is high, strong to the absorption of light, range is wide, is a kind of photodetector of wide spectrum.
2, the flexible wide spectrum photodetector of a kind of organic/inorganic pn-junction nano-array of the invention, used β-
Ga2O3Uniformly, orderly, nanometer column dimension is controllable, β-Ga for nano column array2O3A diameter of 100-200nm of nano-pillar, PFH films
Thickness be 1.0-1.5 μm when, photoelectric properties are more preferably.
3, the flexible wide spectrum photodetector of a kind of organic/inorganic pn-junction nano-array of the invention, extremely to dark purple outskirt
Near infrared region spectrum has response, and wide spectrum detectivity and zero-power characteristic with high-responsivity, performance are stablized, reaction spirit
Quick and flexible and folding, can be applied to the wearable wide spectrum light sensing device of portable.
4, a kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array of the present invention uses
Magnetron sputtering method and rotation Tu method prepare PFH CdSe/ β-Ga2O3Pn-junction nano column array, at low cost, technique is controllable, can be big
The advantages that area prepares, is reproducible.
5, a kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array of the present invention, passes through
β-Ga are directly prepared in glass fibre flexible substrates2O3Film so that the device of formation is tightly combined, and stability is strong；Preparation obtains
The Au/PFH@CdSe/ β-Ga obtained2O3/ Aupn ties nano-array flexibility UV photodetector part, easy to operate, and thickness is stablized equal
One, flexible.
Description of the drawings
Fig. 1 is the structural schematic diagram of the flexible wide spectrum photodetector of the organic/inorganic pn-junction nano-array of the present invention；
Fig. 2 is β-Ga obtained by the method for the present invention2O3The SEM photograph of nano column array；
Fig. 3 is the TEM photos of CdSe quantum dot obtained by the method for the present invention；
Fig. 4 is the flexible broad-spectrum light that the method for the present invention measures organic/inorganic pn-junction nano-array under Compound eye
The I-t curve graphs of electric explorer.
Specific implementation mode
Clear, complete description is carried out to present disclosure below in conjunction with the accompanying drawings, it is clear that described embodiment is this
A part of the embodiment of invention, instead of all the embodiments.Occupy the embodiment in the present invention, those of ordinary skill in the art
The other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Embodiment 1
A kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga metals obtained by step (2)
Piece/glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4)β-Ga2O3The preparation of nano column array：Cavity is vacuumized, argon gas is passed through, adjusts the pressure in vacuum chamber, then
It is passed through oxygen, heating Ga sheet metals/glass fabric substrate open Ga2O3Target radio-frequency power supply, using magnetron sputtering method in gallium gold
Belong to growth in situ β-Ga on the gallium drop on piece surface2O3Nano column array, wherein Ga2O3Target and glass fabric substrate away from
From being set as 5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8Pa, is passed through
After oxygen, the pressure of vacuum chamber is adjusted to 103Pa, heating Ga sheet metal/glass fabric substrate temperature are 800 DEG C, sputtering
Power is 80W, and sputtering time is 1.5 hours；
(5) preparation of CdSe quantum dot：Weigh three mouthfuls that 0.25g CdO, 4mL oleic acid and 30mL octadecylenes are put into 100mL
It in flask, begins to warm up, and is rapidly heated to 130 DEG C after vacuumizing 5min, keep the temperature 30min, then pass to argon gas, be cooled to 30
DEG C hereinafter, weigh 0.05g Se powder again, it is added in three-necked flask, 10min is warming up to 240 DEG C, heat preservation 60min postcoolings to room
Temperature finally utilizes hexamethylene and absolute ethyl alcohol ultrasonic circulation to clean, for use；
(6) PFH is dissolved in chloroform, solution is made, add the CdSe quantum dot obtained by a certain amount of step (5), shape
At mixed solution, the mixed solution prepared is then revolved into the β-Ga that Tu is prepared in step (4)2O3Above nano column array, it is made
Organic/inorganic PFH@CdSe/ β-Ga2O3Pn-junction nano-array.
(7) mask plate is utilized and by radiofrequency magnetron sputtering technology in PFH films and β-Ga2O3Each deposition one above film
Layer Au membrane electrodes, wherein sputtering technology condition：It is 1 × 10 to vacuumize rear chamber pressure-4Pa, underlayer temperature are room temperature, work
Atmosphere is Ar gas, operating air pressure 0.8Pa, sputtering power 80W, sputtering time 5min.
Step (4) prepares β-Ga using magnetron sputtering method2O3Nano column array.Under 700-800 DEG C of high-temperature heating, gallium
Metal film surfaces form gallium metal drop, and β-Ga are grown on gallium metal drop by magnetron sputtering2O3Nano column array, together
When, slowly oxidation forms β-Ga to gallium metal layer under oxygen atmosphere2O3Film.Wherein, gallium can be catalyzed gallium gold as self-catalysis agent
Belong to layer and form gallium oxide nano material at high temperature, slowly oxidation forms gallium oxide film, Ke Yizuo to another aspect gallium metal layer
For array growth substrate so that the gallium oxide nano-pillar of formation is orderly, is evenly distributed.
Sample obtained by step (4) is observed in scanning electron microscope, it is found that nanocolumn growth is uniform, as shown in Fig. 2, display
β-Ga2O3A diameter of 100-200nm of nano-pillar is highly 0.8-1.5 μm, nano column array basal layer β-Ga2O3The thickness of film
Degree is 0.2-0.5 μm.Sample obtained by step (5) is observed in transmission electron microscope, finds a diameter of 4-5nm of CdSe quantum dot
(Fig. 3).
To the Au/PFH@CdSe/ β-Ga of gained in step (7)2O3/ Aupn ties nano-array device and carries out photoelectric properties survey
Examination.Fig. 4 gives the I- for the flexible wide spectrum photodetector that organic/inorganic pn-junction nano-array is measured under Compound eye
T curve graphs.It can be seen from the figure that in not powered pressure (0 volt) control 254nm, 365nm, 460nm, 532nm and 680nm
The switch of different wave length lamp, electric current instantaneously change, and on-off ratio reaches 160, show the photodetector to dark purple outskirt extremely
Near infrared region spectrum has response, high sensitivity, and with the increase of wavelength, photoelectric respone electric current becomes larger, has
The broad-spectrum light detectivity of zero-power and high-responsivity is expected in wearable high-performance night vision, industrial production monitoring and broad-spectrum light
Field of detecting is used widely.
Embodiment 2
A kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga metals obtained by step (2)
Piece/glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4)β-Ga2O3The preparation of nano column array：Cavity is vacuumized, argon gas is passed through, adjusts the pressure in vacuum chamber, then
It is passed through oxygen, heating Ga sheet metals/glass fabric substrate open Ga2O3Target radio-frequency power supply, using magnetron sputtering method in gallium gold
Belong to growth in situ β-Ga on the gallium drop on piece surface2O3Nano column array, wherein Ga2O3Target and glass fabric substrate away from
From being set as 5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8Pa, is passed through
After oxygen, the pressure of vacuum chamber is adjusted to 103Pa, heating Ga sheet metal/glass fabric substrate temperature are 800 DEG C, sputtering
Power is 70W, and sputtering time is 1.0 hours；
(5) preparation of CdSe quantum dot：Weigh three mouthfuls that 0.25g CdO, 5mL oleic acid and 30mL octadecylenes are put into 100mL
It in flask, begins to warm up, and is rapidly heated to 120 DEG C after vacuumizing 5min, keep the temperature 30min, then pass to argon gas, be cooled to 30
DEG C hereinafter, weigh 0.05g Se powder again, it is added in three-necked flask, 10min is warming up to 240 DEG C, heat preservation 60min postcoolings to room
Temperature finally utilizes hexamethylene and absolute ethyl alcohol ultrasonic circulation to clean, for use；
(6) PFH is dissolved in chloroform, solution is made, add the CdSe quantum dot obtained by a certain amount of step (5), shape
At mixed solution, the mixed solution prepared is then revolved into the β-Ga that Tu is prepared in step (4)2O3Above nano column array, it is made
Organic/inorganic PFH@CdSe/ β-Ga2O3Pn-junction nano-array.
(7) mask plate is utilized and by radiofrequency magnetron sputtering technology in PFH films and β-Ga2O3Each deposition one above film
Layer Au membrane electrodes, wherein sputtering technology condition：It is 1 × 10 to vacuumize rear chamber pressure-4Pa, underlayer temperature are room temperature, work
Atmosphere is Ar gas, operating air pressure 0.8Pa, sputtering power 80W, sputtering time 5min.
Embodiment 3
A kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga metals obtained by step (2)
Piece/glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4)β-Ga2O3The preparation of nano column array：Cavity is vacuumized, argon gas is passed through, adjusts the pressure in vacuum chamber, then
It is passed through oxygen, heating Ga sheet metals/glass fabric substrate open Ga2O3Target radio-frequency power supply, using magnetron sputtering method in gallium gold
Belong to growth in situ β-Ga on the gallium drop on piece surface2O3Nano column array, wherein Ga2O3Target and glass fabric substrate away from
From being set as 5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8Pa, is passed through
After oxygen, the pressure of vacuum chamber is adjusted to 103Pa, heating Ga sheet metal/glass fabric substrate temperature are 700 DEG C, sputtering
Power is 70W, and sputtering time is 1.0 hours；
(5) preparation of CdSe quantum dot：Weigh three mouthfuls that 0.25g CdO, 5mL oleic acid and 40mL octadecylenes are put into 100mL
It in flask, begins to warm up, and is rapidly heated to 120 DEG C after vacuumizing 5min, keep the temperature 30min, then pass to argon gas, be cooled to 30
DEG C hereinafter, weigh 0.05g Se powder again, it is added in three-necked flask, 10min is warming up to 230 DEG C, heat preservation 60min postcoolings to room
Temperature finally utilizes hexamethylene and absolute ethyl alcohol ultrasonic circulation to clean, for use；
(6) PFH is dissolved in chloroform, solution is made, add the CdSe quantum dot obtained by a certain amount of step (5), shape
At mixed solution, the mixed solution prepared is then revolved into the β-Ga that Tu is prepared in step (4)2O3Above nano column array, it is made
Organic/inorganic PFH@CdSe/ β-Ga2O3Pn-junction nano-array.
(7) mask plate is utilized and by radiofrequency magnetron sputtering technology in PFH films and β-Ga2O3Each deposition one above film
Layer Au membrane electrodes, wherein sputtering technology condition：It is 1 × 10 to vacuumize rear chamber pressure-4Pa, underlayer temperature are room temperature, work
Atmosphere is Ar gas, operating air pressure 0.8Pa, sputtering power 80W, sputtering time 5min.
Embodiment 4
A kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga metals obtained by step (2)
Piece/glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4)β-Ga2O3The preparation of nano column array：Cavity is vacuumized, argon gas is passed through, adjusts the pressure in vacuum chamber, then
It is passed through oxygen, heating Ga sheet metals/glass fabric substrate open Ga2O3Target radio-frequency power supply, using magnetron sputtering method in gallium gold
Belong to growth in situ β-Ga on the gallium drop on piece surface2O3Nano column array, wherein Ga2O3Target and glass fabric substrate away from
From being set as 5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8Pa, is passed through
After oxygen, the pressure of vacuum chamber is adjusted to 103Pa, heating Ga sheet metal/glass fabric substrate temperature are 750 DEG C, sputtering
Power is 80W, and sputtering time is 1.0 hours；
(5) preparation of CdSe quantum dot：Weigh three mouthfuls that 0.25g CdO, 3mL oleic acid and 40mL octadecylenes are put into 100mL
It in flask, begins to warm up, and is rapidly heated to 125 DEG C after vacuumizing 5min, keep the temperature 30min, then pass to argon gas, be cooled to 30
DEG C hereinafter, weigh 0.05g Se powder again, it is added in three-necked flask, 10min is warming up to 230 DEG C, heat preservation 60min postcoolings to room
Temperature finally utilizes hexamethylene and absolute ethyl alcohol ultrasonic circulation to clean, for use；
(6) PFH is dissolved in chloroform, solution is made, add the CdSe quantum dot obtained by a certain amount of step (5), shape
At mixed solution, the mixed solution prepared is then revolved into the β-Ga that Tu is prepared in step (4)2O3Above nano column array, it is made
Organic/inorganic PFH@CdSe/ β-Ga2O3Pn-junction nano-array.
(7) mask plate is utilized and by radiofrequency magnetron sputtering technology in PFH films and β-Ga2O3Each deposition one above film
Layer Au membrane electrodes, wherein sputtering technology condition：It is 1 × 10 to vacuumize rear chamber pressure-4Pa, underlayer temperature are room temperature, work
Atmosphere is Ar gas, operating air pressure 0.8Pa, sputtering power 80W, sputtering time 5min.
Embodiment 5
A kind of preparation method of the flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, includes the following steps：
(1) glass fabric substrate is cleaned, cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
(2) glass fabric substrate is positioned over warm table, the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
(3) Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga metals obtained by step (2)
Piece/glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
(4)β-Ga2O3The preparation of nano column array：Cavity is vacuumized, argon gas is passed through, adjusts the pressure in vacuum chamber, then
It is passed through oxygen, heating Ga sheet metals/glass fabric substrate open Ga2O3Target radio-frequency power supply, using magnetron sputtering method in gallium gold
Belong to growth in situ β-Ga on the gallium drop on piece surface2O3Nano column array, wherein Ga2O3Target and glass fabric substrate away from
From being set as 5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8Pa, is passed through
After oxygen, the pressure of vacuum chamber is adjusted to 103Pa, heating Ga sheet metal/glass fabric substrate temperature are 800 DEG C, sputtering
Power is 60W, and sputtering time is 1.5 hours；
(5) preparation of CdSe quantum dot：Weigh three mouthfuls that 0.25g CdO, 3mL oleic acid and 30mL octadecylenes are put into 100mL
It in flask, begins to warm up, and is rapidly heated to 130 DEG C after vacuumizing 5min, keep the temperature 30min, then pass to argon gas, be cooled to 30
DEG C hereinafter, weigh 0.05g Se powder again, it is added in three-necked flask, 10min is warming up to 220 DEG C, heat preservation 60min postcoolings to room
Temperature finally utilizes hexamethylene and absolute ethyl alcohol ultrasonic circulation to clean, for use；
(6) PFH is dissolved in chloroform, solution is made, add the CdSe quantum dot obtained by a certain amount of step (5), shape
At mixed solution, the mixed solution prepared is then revolved into the β-Ga that Tu is prepared in step (4)2O3Above nano column array, it is made
Organic/inorganic PFH@CdSe/ β-Ga2O3Pn-junction nano-array.
(7) mask plate is utilized and by radiofrequency magnetron sputtering technology in PFH films and β-Ga2O3Each deposition one above film
Layer Au membrane electrodes, wherein sputtering technology condition：It is 1 × 10 to vacuumize rear chamber pressure-4Pa, underlayer temperature are room temperature, work
Atmosphere is Ar gas, operating air pressure 0.8Pa, sputtering power 80W, sputtering time 5min.
Embodiment 6
As shown in Figure 1, a kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, includes glass successively
Fiber cloth substrate 1, the β-Ga being set on glass fabric substrate 12O3Film 2 is set to β-Ga2O3β-Ga on film 12O3
Nano column array 3 is set to β-Ga2O3The PFH films 4 of 3 top of nano column array and gap, are set in PFH films 4
CdSe quantum dot 5 is set to the first Au membrane electrodes 6 of 4 top of PFH films, is set to β-Ga2O32nd Au of 2 top of film
Membrane electrode 7；The PFH films 4 of inside setting CdSe quantum dot 5 are the organic blue light film of p-type PFH@CdSe quantum dots, p
The organic blue light film of type PFH@CdSe quantum dots and β-Ga2O3Nano column array 3 forms pn-junction structure.
Specifically, the β-Ga2O3Film 2 is as β-Ga2O3The growth substrate of nano column array 3 is located at glass fabric
Substrate 1 and β-Ga2O3Between nano column array 3, the β-Ga2O3The distribution area of nano column array 3 is less than β-Ga2O3Film 2
Area, the β-Ga2O3Nano column array 3 and the 2nd Au membrane electrodes 7 are located at β-Ga2O3The same side of film 2.
Preferably, the CdSe quantum dot 5 is included in PFH films 4, and is uniformly embedded into β-Ga2O3Nano column array 3
Between and be uniformly distributed in β-Ga2O33 top of nano column array.
Preferably, β-Ga2O3A diameter of 100-200nm of nano-pillar is highly 0.8-1.5 μm；The thickness of the PFH films 4
Degree is 1.0-1.5 μm, a diameter of 4-5nm of CdSe quantum dot 5, β-Ga2O3The thickness of film 2 is 0.2-0.5 μm.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, on the basis of the above description, the present invention method and principle within, made
Any modification equivalent replacement, improve, should all be included in the protection scope of the present invention.There is no need and unable to all
Embodiment is exhaustive.And obvious changes or variations extended from this are still in the protection model of the invention
Among enclosing.
Claims (8)
1. a kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, which is characterized in that include glass fibers successively
Tie up cloth substrate, the β-Ga being set on glass fabric substrate2O3Film is set to β-Ga2O3β-Ga on film2O3Nano-pillar
Array is set to β-Ga2O3The PFH films of nano column array top and gap, the CdSe quantum dot being set in PFH films, if
The first Au membrane electrodes being placed in above PFH films, are set to β-Ga2O3The 2nd Au membrane electrodes above film；Inside setting
The PFH films of CdSe quantum dot are the organic blue light film of p-type PFH@CdSe quantum dots, and p-type PFH@CdSe quantum dots are organic
Blue light film and β-Ga2O3Nano column array forms pn-junction structure.
2. a kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array according to claim 1, feature
It is, the β-Ga2O3Film is as β-Ga2O3The growth substrate of nano column array is located at glass fabric substrate and β-Ga2O3
Between nano column array, the β-Ga2O3The distribution area of nano column array is less than β-Ga2O3The area of film, the β-Ga2O3
Nano column array and the 2nd Au membrane electrodes are located at β-Ga2O3The same side of film.
3. a kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array according to claim 1, feature
It is, the CdSe quantum dot is included in PFH films, and is uniformly embedded into β-Ga2O3Between nano column array.
4. a kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array according to claim 1, feature
It is, the CdSe quantum dot is included in PFH films, and is uniformly embedded into β-Ga2O3Divide with uniform between nano column array
It is distributed in β-Ga2O3Above nano column array.
5. a kind of flexible wide spectrum photodetection of organic/inorganic pn-junction nano-array according to claim 1 or 2 or 3 or 4
Device, which is characterized in that the β-Ga2O3A diameter of 100-200nm of nano-pillar is highly 0.8-1.5 μm；The PFH films
Thickness is 1.0-1.5 μm, a diameter of 4-5nm of CdSe quantum dot, β-Ga2O3The thickness of film is 0.2-0.5 μm.
6. a kind of flexible wide spectrum photodetector of organic/inorganic pn-junction nano-array, which is characterized in that include the following steps：
Step 1 cleans glass fabric substrate, and cleaning process is as follows：Substrate is dipped into acetone successively, ethyl alcohol, is gone
It each ultrasonic 10 minutes in ionized water, is rinsed again with deionized water after taking-up, finally uses dry N2Air-blowing is dry, for use；
Glass fabric substrate is positioned over warm table by step 2, and the temperature that warm table is arranged is 100 DEG C, by a Ga metal
It is positioned over above glass fabric substrate, waits for that gallium metal melts, it is using glass slide that liquid Ga embossed metals is in blocks, after cooling,
It is for use to form Ga sheet metals/glass fabric substrate；
Step 3, Ga2O3Target is placed on the target platform position of magnetron sputtering deposition system, by the Ga sheet metals obtained by step 2/
Glass fabric substrate is fixed on sample carrier, puts vacuum chamber into；
Step 4, β-Ga2O3The preparation of nano column array：Cavity is vacuumized, argon gas is passed through, adjusts the pressure in vacuum chamber, then
It is passed through oxygen, heating Ga sheet metals/glass fabric substrate open Ga2O3Target radio-frequency power supply, using magnetron sputtering method in gallium gold
Belong to growth in situ β-Ga on the gallium drop on piece surface2O3Nano column array, wherein Ga2O3Target and glass fabric substrate away from
From being set as 5 centimetres, it is 1 × 10 to vacuumize rear chamber pressure-4Pa, after being passed through argon gas, the pressure of vacuum chamber is 0.8-1.0Pa,
After being passed through oxygen, the pressure of vacuum chamber is adjusted to 103Pa；
Step 5, the preparation of CdSe quantum dot：It weighs 0.25g CdO, 4-5mL oleic acid and 30-40mL octadecylenes and is put into 100mL's
It in three-necked flask, begins to warm up, and is rapidly heated to 120-130 DEG C after vacuumizing 5min, keep the temperature 30min, then pass to argon gas,
30 DEG C are cooled to hereinafter, weigh 0.05g Se powder again, is added in three-necked flask, 10min is warming up to 220-240 DEG C, heat preservation
60min postcoolings finally utilize hexamethylene and absolute ethyl alcohol ultrasonic circulation to clean, for use to room temperature；
PFH is dissolved in chloroform by step 6, and solution is made, and adds the CdSe quantum dot obtained by a certain amount of step 5, is formed
Mixed solution, the β-Ga for then preparing the mixed solution prepared rotation Tu in step 42O3Above nano column array, it is formed with
Machine/inorganic PFH@CdSe/ β-Ga2O3Pn-junction nano-array.
Step 7, using mask plate and by radiofrequency magnetron sputtering technology in PFH films and β-Ga2O3Each deposition one above film
Layer Au membrane electrodes, wherein sputtering technology condition：It is 1 × 10 to vacuumize rear chamber pressure-4Pa, underlayer temperature are room temperature, work
Atmosphere is Ar gas, operating air pressure 0.8-1.0Pa, sputtering power 60-80W, sputtering time 5min.
7. preparation method according to claim 6, it is characterised in that heat Ga sheet metals/glass fibers in the step four
It is 700-800 DEG C, sputtering power 60-80W to tie up cloth substrate temperature, and sputtering time is 1-1.5 hours.
8. preparation method according to claim 6, it is characterised in that operating air pressure is 0.8Pa in the step seven, is splashed
It is 80W to penetrate power.
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| CN110400862A (en) * | 2019-07-29 | 2019-11-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of IR thermal emitter and infrared sensor |
| CN110707177A (en) * | 2019-09-25 | 2020-01-17 | 江苏大学 | Gold nanorod-lead sulfide quantum dot light detector and preparation method thereof |
| CN112909185A (en) * | 2021-01-18 | 2021-06-04 | 西安工业大学 | Preparation method of photoconductive device based on quantum dots and high molecular polymer |
| CN114990505A (en) * | 2022-04-08 | 2022-09-02 | 集美大学 | Gallium oxide film based on optical waveguide effect and preparation method thereof |
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