CN108735563B - Ion implantation terminal device - Google Patents
Ion implantation terminal device Download PDFInfo
- Publication number
- CN108735563B CN108735563B CN201710273867.8A CN201710273867A CN108735563B CN 108735563 B CN108735563 B CN 108735563B CN 201710273867 A CN201710273867 A CN 201710273867A CN 108735563 B CN108735563 B CN 108735563B
- Authority
- CN
- China
- Prior art keywords
- target
- rotary
- ion implantation
- disc
- target table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an ion implantation terminal device, comprising: the target chamber main cavity can support the rotary target table and can provide vacuum conditions for the whole system; the rotary target table can realize angle injection and axis rotation injection of a target sheet; the transition cavity can provide support for the movable shielding cylinder; the movable shielding cylinder can realize the vertical movement of the sweeping plate and the shielding cylinder, and can accurately control the position; the multi-station rotating handle disc can realize switching of different stations. The invention relates to an ion implantation device, belonging to the field of semiconductor manufacturing.
Description
Technical Field
The invention relates to a semiconductor device manufacturing device, namely an ion implanter, in particular to an ion implantation terminal device, belonging to the field of semiconductor equipment.
Background
With the improvement of the integrated circuit technology, higher requirements are put forward on ion implantation equipment, the variety of ion implantation elements is more, the application range of the ion implantation equipment is wider, the ion implantation equipment can be applied to the fields of modification of various materials, manufacturing of semiconductor devices, manufacturing of high-power devices such as SiC electronic devices and the like, and the ion implantation equipment is required to have higher automation degree, simple and convenient operation and stable work.
The existing ion implantation target table system cannot meet the requirements of large-angle implantation, high-uniformity implantation and continuous and stable work, has the defects of high equipment cost, limited implantation process, unstable target table system motion and the like, and an ion implantation terminal device is needed to meet the requirements of low cost and stable motion of multiple degrees of freedom.
Disclosure of Invention
The invention aims to solve the technical problems that the existing ion implanter target table system is high in cost, unstable in motion control, few in implantation process menu and the like, and provides an ion implantation terminal device which can realize multi-angle implantation, target disc rotating motion, multi-station different implantation styles, high cooling efficiency and the like.
For solving multi-angle injection and high homogeneity and pouring into, an ion implantation terminal device, including target chamber main cavity (1), rotatory target table (2), transition cavity (3), remove a shielding section of thick bamboo (4), the rotatory dish (5) of multistation, it mainly provides support and vacuum condition through the target chamber main cavity, it pours into through rotatory target table provides different angle processes, cross scanning when realizing different angle and pouring into through removing a shielding section of thick bamboo detects and secondary electron restraines, can realize the multistation, the big angle is poured into and is satisfied different injection process demands.
Target chamber main cavity body (1) can provide the support for rotatory target platform, can provide the condition of vacuum for whole injection terminal system, can observe beam shape and beam detection in real time, the complete machine debugging of being convenient for.
The rotary target table (2) is designed with multiple degrees of freedom, each degree of freedom vacuum seal adopts rotary magnetic fluid, injection at different angles and under different station conditions can be realized, and the Faraday collector is designed on the target table and can calibrate the beam current to the target center position and the beam current shape.
The transition cavity (3) mainly provides support for the movable shielding cylinder to realize connection with a system before injection.
The movable shielding cylinder (4) mainly comprises a sweeping plate, a target front inhibition electrode, a shielding cylinder and the like, and can meet the requirements of target front electron inhibition and detection of sweeping ranges during injection at different angles.
The multi-station rotating handle disc (5) can realize switching among different injection stations, and is high in positioning accuracy of the injection stations and convenient to operate.
Compared with the prior art, the invention has the beneficial effects that: the invention has compact structure and low cost; the multi-station injection device can realize multi-station, different-angle and high-uniformity injection and can meet various injection process requirements.
Drawings
FIG. 1 is a schematic diagram of an injection termination device according to an embodiment of the present invention;
FIG. 2 is a schematic view of a rotary target table according to an embodiment of the present invention;
FIG. 3 is a schematic view of a rotary target disk according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a mobile shielding canister according to an embodiment of the present invention;
Detailed Description
As shown in fig. 1, an ion implantation terminal device according to an embodiment of the present invention includes a main chamber (1) of a target chamber, a rotating target table (2), a transition chamber (3), a movable shielding cylinder (4), and a multi-station rotating handle (5). The rotary target table (2) is arranged on the main cavity body (1) of the target chamber through the upper cover plate of the main cavity body of the target chamber, so that the movement of the whole rotary target table is supported, the process conditions are provided for the whole injection terminal system, and the injection of different injection process conditions can be realized; the transition cavity (3) is fixed in front of the main cavity (1) of the target chamber through a screw, and the movable shielding cylinder (4) is fixed on the transition cavity (3) through an upper cover, so that the control of the vertical position is realized, and the function of inhibiting secondary electrons and determining the oversweep area is realized; the multi-station rotating handle disc (5) is mainly connected to the rotating target table (2) through a rotating magnetic fluid, and is accurately positioned through a pin, so that switching among different stations is realized.
As shown in a structural schematic diagram of a rotary target table shown in figure 2, the rotary target table (2) comprises 3-degree-of-freedom movement, namely rotary movement around the center of a target disc, X-axis degree of freedom for determining an injection angle and Y-axis degree of freedom for determining an injection station.
As shown in fig. 3, the rotary target disk of the present invention comprises an X-rotary cavity, a rotary target disk, a water-cooled base disk, a magnetic fluid, a driven gear, a driving motor, and a rotary water joint. The rotary target disk can rotate around the central shaft at a certain angular speed, and has a water cooling function under the condition of normal rotation.
As shown in fig. 4, the mobile shielding cylinder of the present invention includes a shielding cylinder, a suppression electrode, an over-sweeping plate, a welding bellows, a guide rail, a motor, and an upper cover plate. Because the angle injection is needed, and the target table generates a certain elevation angle, the central position of the target disc generates a certain displacement L tan theta, in order to meet the requirement of complete injection of the whole target disc, the scanning area is required to be moved upwards by matching with the vertical scanning, and the overscan and the shielding cylinder are required to be movable.
Claims (2)
1. The utility model provides an ion implantation terminal device, includes target chamber main cavity body (1), rotatory target table (2), transition cavity (3), removes a shield section of thick bamboo (4), the rotatory target plate of multistation (5), rotatory target table (2) are fixed on target chamber main cavity body (1) through main cavity body upper cover plate, and transition cavity (3) are through the fix with screw on target chamber main cavity body (1), its characterized in that: the multi-station rotating target disc (5) is connected with the rotating target table (2) through a rotating magnetic fluid; the rotary target table (2) comprises 3-degree-of-freedom motion, namely rotary motion around a central shaft, X-axis degree of freedom for determining an injection angle and Y-axis degree of freedom for determining an injection station; the rotary target table (2) comprises an X rotary cavity, a rotary target disc, a water-cooling base disc, a magnetic fluid, a driven gear, a driving motor and a rotary water connector, wherein the driving motor drives the driven gear to move through the driving gear, the driven gear is coaxially and fixedly connected with the rotary target disc, and the water-cooling base disc is abutted against the rotary target disc; the movable shielding cylinder (4) is fixed on the transition cavity (3) through an upper cover plate and vertically moves through a welded corrugated pipe.
2. The ion implantation terminal device according to claim 1, wherein the main chamber body (1) of the target chamber is provided with a viewing window and an operation door.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710273867.8A CN108735563B (en) | 2017-04-25 | 2017-04-25 | Ion implantation terminal device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710273867.8A CN108735563B (en) | 2017-04-25 | 2017-04-25 | Ion implantation terminal device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108735563A CN108735563A (en) | 2018-11-02 |
CN108735563B true CN108735563B (en) | 2020-12-04 |
Family
ID=63934663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710273867.8A Active CN108735563B (en) | 2017-04-25 | 2017-04-25 | Ion implantation terminal device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108735563B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111190215B (en) * | 2018-11-15 | 2022-02-15 | 北京中科信电子装备有限公司 | Bidirectional focusing mass analyzer |
CN111243926A (en) * | 2018-11-29 | 2020-06-05 | 江苏鲁汶仪器有限公司 | Carrying platform system |
CN111308541B (en) * | 2019-10-15 | 2022-06-28 | 北京烁科中科信电子装备有限公司 | Faraday cylinder device for measuring ion beam current |
WO2021249872A1 (en) | 2020-06-10 | 2021-12-16 | Asml Netherlands B.V. | Replaceable module for a charged particle apparatus |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020125446A1 (en) * | 2001-02-20 | 2002-09-12 | Vanderpot John W. | Substrate positioning system |
US6794664B1 (en) * | 2003-12-04 | 2004-09-21 | Axcelis Technologies, Inc. | Umbilical cord facilities connection for an ion beam implanter |
CN2922117Y (en) * | 2006-03-17 | 2007-07-11 | 北京中科信电子装备有限公司 | Crystal chip platform angle adjusting device |
JP2010015774A (en) * | 2008-07-02 | 2010-01-21 | Sumco Corp | Ion implantation apparatus |
CN102446681A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Analytic diaphragm used for ion implantation machine |
US9455116B2 (en) * | 2014-04-30 | 2016-09-27 | Axcells Technologies, Inc. | Angular scanning using angular energy filter |
CN104409307B (en) * | 2014-11-12 | 2017-03-15 | 中国电子科技集团公司第四十八研究所 | A kind of ion implantation apparatuses scanning means and scan method |
CN104392885B (en) * | 2014-11-13 | 2017-05-10 | 北京中科信电子装备有限公司 | Multi-station high-low temperature target table |
-
2017
- 2017-04-25 CN CN201710273867.8A patent/CN108735563B/en active Active
Non-Patent Citations (1)
Title |
---|
单晶圆注入机注入角度测量与补偿***设计;袁卫华等;《电子工业专用设备》;20170420;第11-15页 * |
Also Published As
Publication number | Publication date |
---|---|
CN108735563A (en) | 2018-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108735563B (en) | Ion implantation terminal device | |
CN104051312A (en) | Chip fully-automatic picking-and-placing vision positioning device and positioning method thereof | |
CN102179996B (en) | Substrate positioning method suitable for screen printing technology | |
CN1892955A (en) | Device for controlling the opening/closing operation of an electric switchgear | |
JP2023539381A (en) | Ion beam etching machine and its elevating rotary table device | |
CN100468605C (en) | Adjustable implantation angle workpiece support structure for an ion beam implanter | |
CN103231196B (en) | Positioning device | |
CN113997003A (en) | Welding machine for electrical engineering processing | |
CN107309215B (en) | Battery case dust collector and go into shell machine | |
CN103199050B (en) | Wafer prealignment device | |
CN116709627A (en) | Novel stripping target for beam extraction of cyclotron and beam extraction method | |
CN2922117Y (en) | Crystal chip platform angle adjusting device | |
CN107179384B (en) | Various target desorption rate testing arrangement | |
CN111308541B (en) | Faraday cylinder device for measuring ion beam current | |
CN210560869U (en) | Sealing type electrode opening and closing mechanism of melting machine | |
CN212874452U (en) | FIB and routing comprehensive processing platform | |
CN109872938B (en) | Ion implanter suitable for micronano device manufacturing | |
CN219303638U (en) | Baffle structure of wafer carrier | |
CN110718432B (en) | Two-degree-of-freedom electric scanning device | |
CN107640578A (en) | A kind of robot arm device with cooling function | |
CN215069898U (en) | Automatic marking device for inspection based on semiconductor | |
CN217596159U (en) | Multi-station elastic element equipment assembly | |
CN216462347U (en) | Automatic target material infiltration device | |
CN213224847U (en) | Tab welding positioning mechanism | |
CN112863947B (en) | Turnover discharging mechanism of single-station circuit breaker |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |