CN108733953A - The cylindrical two-sided silicon drifting detector (SDD) of large area helical form and its design method - Google Patents
The cylindrical two-sided silicon drifting detector (SDD) of large area helical form and its design method Download PDFInfo
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- 238000004364 calculation method Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 21
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Abstract
The invention belongs to field of deep space exploration, discloses a kind of cylindrical two-sided silicon drifting detector (SDD) of large area helical form and its design method, the cylindrical two-sided silicon drifting detector (SDD) design method of large area helical form include the following steps：Determine the potential of silicon drifting detector (SDD) front and rear surfaces；From point S1 to the best drift path of point S2 when intending drifting about in silicon drifting detector (SDD) using mathematics variational calculation carrier；Determine the constant drift field of best drift path；Calculate the width distribution of the spiral-shaped cathode of silicon drifting detector (SDD).The present invention passes through the analysis to SDD carrier drifts Behavior law and heavy doping electrode growth, start with from the corpuscular property theoretical calculation method of new construction, novel process Integrated design and light, design has the two-sided relevant double-face electrode for not only having kept uniform electronic drift field but also provide smooth drift orbit, establishes high energy resolution, the efficient innovative design production method of collecting SDD of the intensity in 0.5~15keV grenz ray particles.
Description
Technical field
The invention belongs to the cylindrical two-sided silicon drifts of field of deep space exploration more particularly to a kind of large area helical form to visit
Survey device and its design method.
Background technology
Currently, the prior art commonly used in the trade is such：
X-ray pulsar be massive star evolution, collapse, supernova outburst traces, have extremely stable rotation
Period (stability be better than 10-19s/s) is known as nature most accurately astronomical clock, can be terrestrial space, survey of deep space
It is forever to provide high-precisions navigation information, the navigation based on pulsar such as position, speed, time and posture with space flight spacecraft
The novel navigation system that can not be destroyed.Compared with GPS, Beidou navigation mode, New System pulsar navigation technology is near the ground
And Deep-space TT&C network application aspect has incomparable advantage.But very low (the 10-5ph/ of pulsar X-ray radiation flow
S/cm2), detection difficulty is big, therefore X-ray detector is the core component for forming pulsar navigation system.X-ray is visited in the world
The research for surveying device, towards silicon drift chamber detector (the Silicon Drift with low-power consumption, high energy resolution
Detector, SDD) technique direction development, with meet X-ray pulsar independent navigation time dissemination system high-performance, large region overlay,
The important technical demand of high availability.Current international SDD areas are small and expensive, and the country there is no mature technology.
In conclusion problem of the existing technology is：
The typical area of silicon drifting detector (SDD) is 50mm in the world2Left and right, price are 100,000 yuan or so.Because detector is set
The problem in science and physical problem complexity of meter are cumbersome, at present top SDD manufacturers in the world, as KETEK and AMTEK is public
Department, that does not capture large area cell S DD still designs and prepares technology, and domestic SDD researchs at present also still rest on small
The stage of cellar area highly relies on import in the university institute and enterprise ground.Once the design of large area SDD units
It is broken through with manufacturing technology bottleneck, the development for Chinese detector, and each field of application detector can play important work
With.
Solve the difficulty and meaning of above-mentioned technical problem：
Due to external technology blockage, and the missing of domestic basic research, the current country there is no large area SDD and its array
Design and produce equal research and development technologies.Problem is established for pulsar X-ray detection and navigation system large database concept, is badly in need of accelerating to open
The high energy resolution SDD tackling problems in key technologies that exhibition China is applied to X-ray pulsar independent navigation time dissemination system is tested with experiment
Card carries out ultrapure High Resistivity Si material silicon drifting detector (SDD) (Silicon Drift Detector, SDD) carrier drift behavior rule
Rule, heavy doping electrode growth rule, large-scale SDD arrays physical arrangement bearing mechanism seize science and technology development strategy commanding elevation, realize detection
The great-leap-forward development of device technology, the technical bottleneck for breaking through domestic pulsar autonomous positioning navigation time dissemination system have extremely heavy
The meaning wanted.
The present invention is by the analysis to SDD carrier drifts Behavior law and heavy doping electrode growth, from new construction, novel
The corpuscular property theoretical calculation method of technique Integrated design and light is started with, and design, which has, two-sided relevant both kept uniform electronic to drift about
Electric field provides the double-face electrode of smooth drift orbit again, establish intensity 0.5~15keV grenz ray particles high energy resolution
Rate, the innovative design production method for efficiently collecting SDD.The detector overcomes the disadvantage that detector area is small in the world, in unit
Big (the 314mm of area2To 2827mm2) on the basis of, energy resolution is further increased, energy consumption is reduced, reduces noise etc..For
For the detector array of square meter grade needed for pulsar detection, large area detector unit reduces array and forms required spy
Device number is surveyed, the difficulty such as physical mechanical stress when array splicing is reduced, further saves cost, is space flight and aviation and deep space
The development of detection provides foreword technical support.
Invention content
In view of the problems of the existing technology, the present invention provides a kind of cylindrical two-sided silicon drifts of large area helical form to visit
Device and its design method are surveyed, captures that SDD cellar areas in the world are small, splicing array problem of high cost, while realizing grenz ray
High energy resolution 2.0%@5.9keV surmount.
The invention is realized in this way a kind of design method of the cylindrical two-sided silicon drifting detector (SDD) of large area helical form.
Wherein, 1 is front anode electrode, is the N-type semiconductor silicon of heavy doping；2 be the first ring of front cathode electrode, is the P of heavy doping
Type semiconductor silicon, shape are circular helical form；3 be front cathode electrode most outer shroud；4 be silicon body, for the N-type half being lightly doped
Conductor silicon；5 be the first ring of reverse side cathode electrode, is the P-type semiconductor silicon of heavy doping, and shape is circular helical form；6 be anti-
Last ring of the cathode electrode in face, is the P-type semiconductor silicon of heavy doping, and shape is circular helical form；Do not have in this schematic diagram
It is the heavily doped P-type semiconductor silicon of most outer shroud to have mark protection ring, general protection ring.Include the following steps：
(1) potential of silicon drifting detector (SDD) front and rear surfaces is determined：
The inside drift field of cylindrical two-sided silicon drifting detector (SDD) and two surface potentials up and down of detector are distributed with
It closes, the negative potential of any point (r, x, θ) inside cylindrical two-sided silicon drifting detector (SDD) should meet the following conditions：
Wherein, x is the coordinate of detector thickness direction, and r is the coordinate along cylinder radius direction, and θ is angular coordinate, this
Sample Poisson's equation can be reduced to following form：
Wherein NeffIt is the Effective Doping concentration of SDD, the solution of equation (2) is：
Wherein, Vfd=qNDd2/2ε0ε is total depletion voltage, and d is the thickness of SDD, and Φ (r) and Ψ (r) are front and back table respectively
The potential (x=0 and x=d) in face：
Φ (r)=φ (r, x=0) and Ψ (r)=φ (r, x=d).
(2) from point S when intending drifting about in silicon drifting detector (SDD) using mathematics variational calculation carrier1To point S2It is best
Drift path (as shown in Figure 2)：
It is assumed that the voltage's distribiuting of reverse side is directly proportional to positive voltage's distribiuting, have：
Ψ (r)=VB+ γ Φ (r) (0≤γ < 1) (5)
And then best drift path can be obtained；
(3) the constant drift field of best drift path is determined：It is one normal to meet along the electric field in best drift path
Number, i.e. Edr,r(r,xch(r))=Edr,r, and the distribution of the surface potential of obtained constant drift field must be determined by following equation：
Its corresponding surface electric field distribution is：
VfdFor total depletion voltage, analyze it is found that constant drift field is determined by added voltage completely：
(4) width distribution of the spiral-shaped cathode of silicon drifting detector (SDD) is calculated：For the special case of a spiral spacing, i.e.,
Spacing p (r) withIt is directly proportional：
Wherein p1It is the spacing of first lap, r1It is the radius of first lap, they can be determined in design, in such case
Under, the spiral-shaped cathode of silicon drifting detector (SDD) can be determined by following equation：
WhereinThe rotation angle increased continuously when being spiral rotating；The width of the spiral-shaped cathode of silicon drifting detector (SDD)
It is distributed as：
Wherein, ρ s are the square resistances of spiral-shaped cathode ion implanted layer, and I is the total current of spiral-shaped cathode, and α is
It is determined by the geometry of spiral cathode, but in practical applications in order to form overall compact silicon drifting detector (SDD) array,
It is spiral-shaped to hank subcircular, such as right cylindrical (α=6), or square
Another object of the present invention is to provide a kind of cylindrical two-sided silicon drifting detector (SDD)s of large area helical form.Wherein, 1
It is front anode electrode, is the N-type semiconductor silicon of heavy doping；2 be the first ring of front cathode electrode, is partly led for the p-type of heavy doping
Body silicon, shape are circular helical form；3 be front cathode electrode most outer shroud；4 be silicon body, for the N-type semiconductor being lightly doped
Silicon；5 be the first ring of reverse side cathode electrode, is the P-type semiconductor silicon of heavy doping, and shape is circular helical form；6 be reverse side
Last ring of cathode electrode, is the P-type semiconductor silicon of heavy doping, and shape is circular helical form；It is not marked in schematic diagram
Protection ring, general protection ring are the heavily doped P-type semiconductor silicon of most outer shroud.
In conclusion advantages of the present invention and good effect are：
The present invention is by the analysis to SDD carrier drifts Behavior law and heavy doping electrode growth, from new construction, novel
The corpuscular property theoretical calculation method of technique Integrated design and light is started with, and design, which has, two-sided relevant both kept uniform electronic to drift about
Electric field provides the double-face electrode of smooth drift orbit again, establish intensity 0.5~15keV grenz ray particles high energy resolution
Rate, the innovative design production method for efficiently collecting SDD.
The detector overcomes the disadvantage that detector area is small in the world, in the big (314mm of cellar area2To 2827mm2) base
On plinth, energy resolution is further increased, reduces energy consumption, reduces noise etc..Spy for the square meter grade needed for pulsar detection
It surveys for device array, large area detector unit reduces array and forms required detector number, reduces when array splices
The difficulty such as physical mechanical stress, further save cost, and foreword technology is provided for the development of space flight and aviation and survey of deep space
Support.
Following table is the comparison of the index and advanced SDD technical indicators in the world of the present invention, and comparison is German KETEK public
The SDD last word indexs of department, as shown in table 1.
Table 1：The index of the present invention and international advanced SDD technologies compare
Description of the drawings
Fig. 1 is the two-sided silicon drifting detector (SDD) structural representation of the spiral helicine cylinder of large area provided in an embodiment of the present invention
Figure；
Fig. 2 is the possibility that carrier provided in an embodiment of the present invention drifts about in SDD and Optimal route analysis curve graph.
Fig. 3 is the three-dimensional potential distribution map obtained by emulation and differential calculation method, the three-dimensional electricity that this method obtains
Gesture distribution map is international the first, it will be clear that voltage gradient and drift path from figure.
Fig. 4 is the three-dimensional electric field distribution map obtained by emulation and differential calculation method, the three-dimensional electricity that this method obtains
Field pattern is international the first, it will be clear that the best drift channel of line-like from figure.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
As shown in Figure 1, being a kind of two-sided silicon drift detection of the spiral helicine cylinder of large area provided in an embodiment of the present invention
Device.Wherein, 1 is front anode electrode, is the N-type semiconductor silicon of heavy doping；2 be the first ring of front cathode electrode, is heavy doping
P-type semiconductor silicon, shape be circular helical form；3 be front cathode electrode most outer shroud；4 be silicon body, for the N being lightly doped
Type semiconductor silicon；5 be the first ring of reverse side cathode electrode, is the P-type semiconductor silicon of heavy doping, and shape is circular helical form；6
It is last ring of the cathode electrode of reverse side, is the P-type semiconductor silicon of heavy doping, shape is circular helical form；This schematic diagram
In without mark protection ring, general protection ring be most outer shroud heavily doped P-type semiconductor silicon.Silicon body one side make anode with
And cathode electrode, it is referred to as positive.Cathode electrode is made in the another side of silicon body, the one side of anode electrode is not known as reverse side.Just
Face cathode electrode and reverse side cathode electrode are circular helical form.
The design method of the cylindrical two-sided silicon drifting detector (SDD) of the large area helical form, includes the following steps：
(1) potential of silicon drifting detector (SDD) front and rear surfaces is determined：
The inside drift field of cylindrical two-sided silicon drifting detector (SDD) and two surface potentials up and down of detector are distributed with
It closes, the negative potential of any point (r, x, θ) inside cylindrical two-sided silicon drifting detector (SDD) should meet the following conditions：
Wherein, x is the coordinate of detector thickness direction, and r is the coordinate along cylinder radius direction, and θ is angular coordinate, this
Sample Poisson's equation can be reduced to following form：
Wherein NeffIt is the Effective Doping concentration of SDD, the solution of equation (2) is：
Wherein, Vfd=qNDd2/2ε0ε is total depletion voltage, and d is the thickness of SDD, and Φ (r) and Ψ (r) are front and back table respectively
The potential (x=0 and x=d) in face：
Φ (r)=φ (r, x=0) and Ψ (r)=φ (r, x=d).
(2) from point S when intending drifting about in silicon drifting detector (SDD) using mathematics variational calculation carrier1To point S2It is best
Drift path：
It is assumed that the voltage's distribiuting of reverse side is directly proportional to positive voltage's distribiuting, have：
Ψ (r)=VB+ γ Φ (r) (0≤γ < 1) (5)
And then best drift path can be obtained；
(3) the constant drift field of best drift path is determined：It is one normal to meet along the electric field in best drift path
Number, i.e. Edr,r(r,xch(r))=Edr,r, and the distribution of the surface potential of obtained constant drift field must be determined by following equation：
Its corresponding surface electric field distribution is：
VfdFor total depletion voltage, analyze it is found that constant drift field is determined by added voltage completely：
(4) width distribution of the spiral-shaped cathode of silicon drifting detector (SDD) is calculated：For the special case of a spiral spacing, i.e.,
Spacing p (r) withIt is directly proportional：
Wherein p1It is the spacing of first lap, r1It is the radius of first lap, they can be determined in design, in such case
Under, the spiral-shaped cathode of silicon drifting detector (SDD) can be determined by following equation：
WhereinThe rotation angle increased continuously when being spiral rotating；The width of the spiral-shaped cathode of silicon drifting detector (SDD)
It is distributed as：
Wherein, ρsIt is the square resistance of spiral-shaped cathode ion implanted layer, I is the total current of spiral-shaped cathode, and α is
It is determined by the geometry of spiral cathode, but in practical applications in order to form overall compact silicon drifting detector (SDD) array,
It is spiral-shaped to hank subcircular, such as right cylindrical (α=6), or square
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (2)
1. a kind of design method of the cylindrical two-sided silicon drifting detector (SDD) of large area helical form, which is characterized in that the large area
The design method of the cylindrical two-sided silicon drifting detector (SDD) of helical form, includes the following steps：
(1) potential of silicon drifting detector (SDD) front and rear surfaces is determined：
The inside drift field of cylindrical two-sided silicon drifting detector (SDD) is related with two surface potential distributions up and down of detector, circle
The negative potential of any point (r, x, θ) inside the two-sided silicon drifting detector (SDD) of cylindricality should meet the following conditions：
Wherein, x is the coordinate of detector thickness direction, and r is the coordinate along cylinder radius direction, and θ is angular coordinate, is moored in this way
Loose measure journey can be reduced to following form：
Wherein NeffIt is the Effective Doping concentration of SDD, the solution of equation (2) is：
Wherein, Vfd=qNDd2/2ε0ε is total depletion voltage, and d is the thickness of SDD, and Φ (r) and Ψ (r) are front and rear surfaces respectively
Potential (x=0 and x=d)：
Φ (r)=φ (r, x=0) and Ψ (r)=φ (r, x=d).
(2) from point S when intending drifting about in silicon drifting detector (SDD) using mathematics variational calculation carrier1To point S2Best drift
Path：
It is assumed that the voltage's distribiuting of reverse side is directly proportional to positive voltage's distribiuting, have：
Ψ (r)=VB+ γ Φ (r) (0≤γ < 1) (5)
And then best drift path can be obtained；
(3) the constant drift field of best drift path is determined：It is a constant to meet along the electric field in best drift path, i.e.,
Edr,r(r,xch(r))=Edr,r, and the distribution of the surface potential of obtained constant drift field must be determined by following equation：
Its corresponding surface electric field distribution is：
VfdFor total depletion voltage, analyze it is found that constant drift field is determined by added voltage completely：
(4) width distribution of the spiral-shaped cathode of silicon drifting detector (SDD) is calculated：For the special case of a spiral spacing, i.e. spacing
P (r) withIt is directly proportional：
Wherein p1It is the spacing of first lap, r1It is the radius of first lap, they can be determined in design, in this case, silicon
The spiral-shaped cathode of drifting detector can be determined by following equation：
WhereinThe rotation angle increased continuously when being spiral rotating；The width distribution of the spiral-shaped cathode of silicon drifting detector (SDD)
For：
Wherein, ρsIt is the square resistance of spiral-shaped cathode ion implanted layer, I is the total current of spiral-shaped cathode, and α is by spiral shell
The geometry decision of cathode is revolved, spiral-shaped is subcircular.
2. a kind of design method by the cylindrical two-sided silicon drifting detector (SDD) of large area helical form described in claim 1 designs
The cylindrical two-sided silicon drifting detector (SDD) of large area helical form, which is characterized in that the cylindrical two-sided silicon of the large area helical form
Drifting detector includes：Front anode electrode, the first ring of front cathode electrode, front cathode electrode most outer shroud, silicon body, reverse side are cloudy
The first ring of pole electrode, the cathode electrode of reverse side last ring.
Front anode electrode is the N-type semiconductor silicon of heavy doping；Cathode electrode the first ring in front is the P-type semiconductor of heavy doping
Silicon, shape are circular helical form；Front cathode electrode most outer shroud；Silicon body, for the N-type semiconductor silicon being lightly doped；Reverse side cathode
The first ring of electrode, is the P-type semiconductor silicon of heavy doping, and shape is circular helical form；Last ring of the cathode electrode of reverse side is
The P-type semiconductor silicon of heavy doping, shape are circular helical form.
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| CN109671797A (en) * | 2018-12-21 | 2019-04-23 | 中国科学院微电子研究所 | Drifting detector and preparation method thereof |
| CN109671798A (en) * | 2018-12-21 | 2019-04-23 | 中国科学院微电子研究所 | Drifting detector and preparation method thereof |
| CN110350044A (en) * | 2019-04-01 | 2019-10-18 | 湖南正芯微电子探测器有限公司 | Square spiral silicon drifting detector (SDD) and preparation method thereof |
| CN111370527A (en) * | 2020-03-25 | 2020-07-03 | 湘潭大学 | Equal-gap gradient increasing concentric circle type double-sided silicon drift detector and design method thereof |
| CN111668323A (en) * | 2020-06-15 | 2020-09-15 | 中国科学院微电子研究所 | Drift detector and processing method thereof |
| CN111863845A (en) * | 2020-07-23 | 2020-10-30 | 湖南正芯微电子探测器有限公司 | Silicon pixel detector with single-sided cathode in spiral ring structure and array thereof |
| CN116741845A (en) * | 2023-06-09 | 2023-09-12 | 湘潭大学 | Equal-clearance spiral ring large-area silicon drift detector with controllable clearance gap |
| CN111863845B (en) * | 2020-07-23 | 2024-05-28 | 湖南脉探芯半导体科技有限公司 | Silicon pixel detector with spiral ring structure on single-sided cathode and array thereof |
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| CN111370527A (en) * | 2020-03-25 | 2020-07-03 | 湘潭大学 | Equal-gap gradient increasing concentric circle type double-sided silicon drift detector and design method thereof |
| CN111370527B (en) * | 2020-03-25 | 2023-06-23 | 湘潭大学 | Equal-gap gradient increasing concentric circle type double-sided silicon drift detector and design method thereof |
| CN111668323A (en) * | 2020-06-15 | 2020-09-15 | 中国科学院微电子研究所 | Drift detector and processing method thereof |
| CN111863845A (en) * | 2020-07-23 | 2020-10-30 | 湖南正芯微电子探测器有限公司 | Silicon pixel detector with single-sided cathode in spiral ring structure and array thereof |
| CN111863845B (en) * | 2020-07-23 | 2024-05-28 | 湖南脉探芯半导体科技有限公司 | Silicon pixel detector with spiral ring structure on single-sided cathode and array thereof |
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