CN108732210B - Piezoelectric device structure defect detection method based on impedance spectrum - Google Patents
Piezoelectric device structure defect detection method based on impedance spectrum Download PDFInfo
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- CN108732210B CN108732210B CN201810524125.2A CN201810524125A CN108732210B CN 108732210 B CN108732210 B CN 108732210B CN 201810524125 A CN201810524125 A CN 201810524125A CN 108732210 B CN108732210 B CN 108732210B
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- 238000001453 impedance spectrum Methods 0.000 title claims abstract description 76
- 238000001514 detection method Methods 0.000 title claims abstract description 21
- 230000007547 defect Effects 0.000 title claims abstract description 14
- 238000012360 testing method Methods 0.000 claims abstract description 14
- 230000006378 damage Effects 0.000 claims description 35
- 238000001566 impedance spectroscopy Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 8
- 239000000523 sample Substances 0.000 description 21
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/20—Investigating the presence of flaws
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Abstract
The invention discloses a piezoelectric device structure defect detection method based on an impedance spectrum, which belongs to the technical field of electronics. And testing the impedance spectrum of the new sample, calculating a difference factor between the impedance spectrum and the standard impedance spectrum, and judging whether the new sample is qualified or not according to a comparison result of the difference factor of the new sample and a threshold value. By means of the method, whether the piezoelectric device is qualified or not can be judged rapidly and nondestructively.
Description
Technical Field
The invention belongs to the technical field of defect detection of piezoelectric devices, and particularly relates to a piezoelectric device structure defect detection method based on impedance spectroscopy.
Background
The piezoelectric device is a force and electric transducer, is often manufactured into a driver, an energy transducer, a sensor and the like, and has wide application in the fields of military and civil use.
The piezoelectric device needs to work in a high-temperature and low-temperature environment for a long time and repeatedly expands and contracts to deform, in the process, defects may occur in the piezoelectric element and the connecting layer inside the piezoelectric device, and when the defects exceed a certain degree, the defects or microcracks may expand, so that the whole piezoelectric device fails.
Defects of the piezoelectric element and the connection layer inside the piezoelectric device are generally detected by a destructive test such as cross-sectional inspection or scanned by an imaging means such as X-ray or ultrasound, but these detection methods have low detection efficiency and low detection accuracy.
Disclosure of Invention
The invention aims to provide a piezoelectric device structure defect detection method based on impedance spectroscopy, which aims to overcome the problems in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a piezoelectric device structure defect detection method based on impedance spectroscopy comprises the following steps:
step 1: connecting positive and negative electrodes of a batch of known qualified piezoelectric devices with an impedance analyzer, and outputting impedance spectrums of the piezoelectric devices; calculating and summing difference factors of the impedance spectrums, and selecting the impedance spectrum with the minimum summation result as a standard impedance spectrum;
step 2: connecting the positive and negative electrodes of a batch of known qualified and known unqualified piezoelectric devices with an impedance analyzer and outputting impedance spectrums thereof; calculating difference factors between the impedance spectrums and the standard impedance spectrums, defining the difference factors between the impedance spectrums and the standard impedance spectrums as damage factors, and selecting critical values of the damage factors of qualified samples and unqualified samples as threshold values;
and step 3: and testing the impedance spectrum of the newly produced piezoelectric device, calculating the damage factor of the piezoelectric device, comparing the damage factor with a threshold value, wherein the piezoelectric device with the damage factor larger than the threshold value is an unqualified sample, and the piezoelectric device with the damage factor smaller than the threshold value is a qualified sample.
Further, the phase information in the impedance spectrum is used when the difference factor is calculated in step 1 and when the damage factor is calculated in step 2.
Further, the calculation formula of the difference factor in step 1 is:
wherein, theta1And theta2Respectively, the phase value, theta, corresponding to each frequency point in the impedance spectra of the two devices0Is the phase value of the piezoelectric device in a non-resonant state.
Further, the calculation formula of the injury factor in step 2 is as follows:
wherein, theta3Is the corresponding phase value of the impedance spectrum of the piezoelectric device under different frequencies, theta is the phase value under different frequencies in the standard impedance spectrum, theta0Is the phase value of the piezoelectric device in a non-resonant state.
Compared with the prior art, the invention has the following beneficial technical effects:
the impedance spectrum detection method based on the small signal is a nondestructive test, avoids the damage to devices, has the advantages of high detection efficiency, high detection precision, low detection cost and capability of rapidly and repeatedly testing compared with other various imaging tests, quantifies the difference between the impedance spectrums, extracts the threshold value and is beneficial to the automation of the detection of the defects.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a comparison of impedance spectra of a qualified piezoelectric device;
FIG. 3 is an impedance spectrum comparison of pass and fail piezoelectric devices;
FIG. 4 is a graph of damage factors for a qualified sample versus a non-qualified sample;
fig. 5 is a graph showing the change in damage factor during gradual low temperature damage of a pass piezoelectric device.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 1, a method for detecting structural defects of a piezoelectric device based on impedance spectroscopy includes the following steps:
wherein theta is1And theta2Respectively, the phase value, theta, corresponding to each frequency point in the impedance spectra of the two devices0Is the phase value of the piezoelectric device in a non-resonant state.
wherein, theta3Is the corresponding phase value of the impedance spectrum of the piezoelectric device under different frequencies, theta is the phase value under different frequencies in the standard impedance spectrum, theta0Is the phase value of the piezoelectric device in a non-resonant state. And selecting a critical value of damage factors of the qualified sample and the unqualified sample as a threshold value.
And 3, testing the impedance spectrum of the newly produced piezoelectric device, calculating a damage factor of the piezoelectric device, comparing the damage factor with a threshold value, wherein the samples which are larger than the threshold value are unqualified samples, and the samples which are smaller than the threshold value are qualified samples.
The calculation of the difference factor and the damage factor is based on a deformation of covariance to indicate the degree of correlation between the two sets of data, the greater the values of the difference factor and the damage factor, the lower the degree of correlation between the two sets of data, i.e., the greater the difference between the impedance spectra. The difference between acceptable samples is very small, while the difference between unacceptable samples will be large.
The following describes the operation process of the embodiment of the present invention in detail:
when an alternating current signal is applied to the piezoelectric element, the piezoelectric element vibrates, and under excitation of alternating current voltages with different frequencies, the vibration mode and the vibration amplitude of the piezoelectric element are different.
Under the excitation of some specific frequency voltages, the vibration of the piezoelectric element is very obvious and is represented as a phase peak, the frequency corresponding to the phase peak is the resonance frequency, and the magnitude of the phase peak reflects the strength of the resonance.
The resonance frequency of the piezoelectric element is affected by the equivalent length of vibration and mass distribution, and the strength of resonance is affected by boundary constraints. Therefore, when the piezoelectric element and the connecting layer inside the piezoelectric device are defective, the resonant frequency and the resonant strength of the piezoelectric element are changed, which is represented by a frequency change corresponding to the phase peak and a size change of the phase peak.
The invention quantifies the change through the difference factor, determines the standard impedance spectrum and the threshold value of the difference factor through the known qualified sample and the known unqualified sample, and judges whether the piezoelectric device is qualified or not through comparing the size of the difference factor and the threshold value.
Referring to fig. 1, the specific process of the method for detecting structural defects of a piezoelectric device based on impedance spectroscopy according to the present invention is as follows:
wherein theta is1And theta2Respectively, the phase value, theta, corresponding to each frequency point in the impedance spectra of the two devices0Is the phase value of the piezoelectric device in a non-resonant state.
The impedance spectrum of the acceptable sample is shown in FIG. 2, θ1And theta2The phase values, θ, corresponding to the frequencies in the impedance spectrum of FIG. 20Is the phase value of the piezoelectric device in a non-resonant state, since the dielectric loss of the general piezoelectric material is small, theta0≈-90。
The impedance spectra of the qualified samples are not greatly different from each other, and the difference factors are small. And calculating to obtain the minimum sum of the difference factors of the qualified sample 1, selecting the qualified sample 1 as a standard sample, and taking the impedance spectrum of the qualified sample 1 as a standard impedance spectrum.
wherein, theta3Is the corresponding phase value of the impedance spectrum of the piezoelectric device under different frequencies, theta is the phase value under different frequencies in the standard impedance spectrum, theta0Is the phase value of the piezoelectric device in the non-resonant state, typically taken to be-90. And selecting a critical value of damage factors of the qualified sample and the unqualified sample as a threshold value.
The sample is unqualified for many reasons, and the impedance spectrum of the unqualified sample is different. The difference in impedance spectra between a rejected sample and a standard sample is shown in FIG. 3, and is significant, so that the damage factor of the rejected sample is generally large. The damage factor calculation results for some known good samples versus failed samples are shown in fig. 4, with 0.1 being selected as the threshold.
And 3, testing the impedance spectrum of the newly produced piezoelectric device, calculating a damage factor of the piezoelectric device, comparing the damage factor with a threshold value, wherein the samples which are larger than the threshold value are unqualified samples, and the samples which are smaller than the threshold value are qualified samples.
In addition, the method of the invention is further verified:
some qualified piezoelectric devices are taken and subjected to low-temperature tests for many times until the devices fail (cannot work normally), and the damage factors of the devices are tested after the devices are recovered to room temperature after each low-temperature test, and the results are shown in fig. 5, and finally, when the damage factors of the piezoelectric devices are larger than a threshold value of 0.1, the piezoelectric devices are damaged. Therefore, the method can accurately detect the damaged piezoelectric device.
In summary, the impedance spectrum detection method based on the small signal is a nondestructive test, avoids damage to devices, and has the advantages of high detection efficiency, high detection precision, low detection cost and rapid and repeated test compared with other various imaging tests. Meanwhile, the invention quantifies the difference between the impedance spectrums and extracts the threshold value, thereby being beneficial to the automation of the defect detection.
Claims (1)
1. A piezoelectric device structure defect detection method based on impedance spectroscopy is characterized by comprising the following steps:
step 1: connecting positive and negative electrodes of a batch of known qualified piezoelectric devices with an impedance analyzer, and outputting impedance spectrums of the piezoelectric devices; calculating and summing difference factors of the impedance spectrums, and selecting the impedance spectrum with the minimum summation result as a standard impedance spectrum; phase information in the impedance spectrum is adopted when the difference factor is calculated;
the calculation formula of the difference factor is as follows:
wherein, theta1And theta2Respectively, the phase value, theta, corresponding to each frequency point in the impedance spectra of the two devices0Is the phase value of the piezoelectric device in a non-resonant state;
step 2: connecting the positive and negative electrodes of a batch of known qualified and known unqualified piezoelectric devices with an impedance analyzer and outputting impedance spectrums thereof; calculating difference factors between the impedance spectrums and the standard impedance spectrums, defining the difference factors between the impedance spectrums and the standard impedance spectrums as damage factors, and selecting critical values of the damage factors of qualified samples and unqualified samples as threshold values; phase information in an impedance spectrum is adopted when the damage factor is calculated;
the formula for calculating the damage factor is:
wherein, theta3Is the corresponding phase value of the impedance spectrum of the piezoelectric device under different frequencies, theta is the phase value under different frequencies in the standard impedance spectrum, theta0Is the phase value of the piezoelectric device in a non-resonant state;
and step 3: and testing the impedance spectrum of the newly produced piezoelectric device, calculating the damage factor of the piezoelectric device, comparing the damage factor with a threshold value, wherein the piezoelectric device with the damage factor larger than the threshold value is an unqualified sample, and the piezoelectric device with the damage factor smaller than the threshold value is a qualified sample.
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| CN104597083A (en) * | 2015-01-13 | 2015-05-06 | 大连理工大学 | Ultrasonic guided wave and electromechanical impedance-based mobile damage detection method |
| CN105388190A (en) * | 2015-11-17 | 2016-03-09 | 郑州大学 | Composite material wing damage positioning method based on electrical impedance of coupling machine |
| CN105676082A (en) * | 2016-01-19 | 2016-06-15 | 华北电力大学（保定） | Internal defect detection system and method for basin-type insulator of gas insulated switchgear (GIS) |
| CN107153095A (en) * | 2017-06-02 | 2017-09-12 | 大连交通大学 | The health detecting system and its method of work of a kind of composite plate structure |
| CN107917957A (en) * | 2017-10-27 | 2018-04-17 | 中车青岛四方机车车辆股份有限公司 | A kind of damage detecting method of slab structure |
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| US20150064723A1 (en) * | 2013-08-30 | 2015-03-05 | Drexel University | Dual mode sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597083A (en) * | 2015-01-13 | 2015-05-06 | 大连理工大学 | Ultrasonic guided wave and electromechanical impedance-based mobile damage detection method |
| CN105388190A (en) * | 2015-11-17 | 2016-03-09 | 郑州大学 | Composite material wing damage positioning method based on electrical impedance of coupling machine |
| CN105676082A (en) * | 2016-01-19 | 2016-06-15 | 华北电力大学（保定） | Internal defect detection system and method for basin-type insulator of gas insulated switchgear (GIS) |
| CN107153095A (en) * | 2017-06-02 | 2017-09-12 | 大连交通大学 | The health detecting system and its method of work of a kind of composite plate structure |
| CN107917957A (en) * | 2017-10-27 | 2018-04-17 | 中车青岛四方机车车辆股份有限公司 | A kind of damage detecting method of slab structure |
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| 压电柔性梁裂缝损伤识别实验;邱志成 等;《振动、测试与诊断》;20130630;第33卷(第3期);394页第1栏，397页第1栏 * |
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