CN108707965A - 一种cvd单晶金刚石异质外延衬底的结构及制备方法 - Google Patents

一种cvd单晶金刚石异质外延衬底的结构及制备方法 Download PDF

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CN108707965A
CN108707965A CN201810621757.0A CN201810621757A CN108707965A CN 108707965 A CN108707965 A CN 108707965A CN 201810621757 A CN201810621757 A CN 201810621757A CN 108707965 A CN108707965 A CN 108707965A
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左浩
李升�
刘宏明
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Xi'an Carbon Star Semiconductor Technology Co Ltd
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Abstract

本发明公开了一种CVD单晶金刚石异质外延衬底的结构及制备方法，其结构，包括蓝宝石衬底，所述蓝宝石衬底的顶部外壁设置有金属IR层，且金属IR层的顶部外壁设置有纳米晶金刚石成核层，且结构的制备方法，包括在蓝宝石衬底的顶部外壁通过剖光***进行单面剖光，并通过表面粗糙度检测仪进行粗糙度检测，若蓝宝石衬底单面剖光不合格时则继剖光，直至合格，同时通过吸尘设备吸取废渣，使用磁控溅射方法，在S1中单面剖光后的蓝宝石衬底的外壁淀积一层厚度为100‑300nm的金属IR层。本发明实现大面积单晶金刚石的低成本生长，可用于生长英寸级的大面积单晶金刚石，能够实时检测蓝宝石衬底单面剖光的光滑度。

Description

一种CVD单晶金刚石异质外延衬底的结构及制备方法
技术领域
本发明涉及金刚石外延衬底技术领域，尤其涉及一种CVD单晶金刚石异质外延衬底的结构及制备方法。
背景技术
VD(Chemical Vapor Deposition化学气相沉积)金刚石。含碳气体和氧气的混合物在高温和低于标准大气压的压力下被激发分解，形成活性金刚石碳原子，并在基体上沉积交互生长成聚晶金刚石(或控制沉积生长条件沉积生长金刚石单晶或者准单晶)。
经检索，中国专利申请号为CN201410794743.0的专利，公开了一种异质外延生长大尺寸单晶金刚石的衬底及其制备方法。所述衬底自下而上依次为Si衬底、TiN单晶籽晶层、金属氧化物单晶薄膜层、铱单晶薄膜层。上述专利中的一种异质外延生长大尺寸单晶金刚石的衬底及其制备方法存在以下不足：不能够实现大面积单晶金刚石的低成本成长，不利于英寸级的大面积单晶金刚石。
发明内容
基于背景技术存在的技术问题，本发明提出了一种CVD单晶金刚石异质外延衬底的结构及制备方法。
本发明提出的一种CVD单晶金刚石异质外延衬底的结构，包括蓝宝石衬底，所述蓝宝石衬底的顶部外壁设置有金属IR层，且金属IR层的顶部外壁设置有纳米晶金刚石成核层。
一种CVD单晶金刚石异质外延衬底结构的制备方法，包括以下步骤：
S1：在蓝宝石衬底的顶部外壁通过剖光***进行单面剖光，并通过表面粗糙度检测仪进行粗糙度检测，若蓝宝石衬底单面剖光不合格时则继剖光，直至合格，同时通过吸尘设备吸取废渣；
S2：使用磁控溅射方法，在S1中单面剖光后的蓝宝石衬底的外壁淀积一层厚度为100-300nm的金属IR层；
S3：在金属IR层上使用微波等离子体化学气相淀积设备低压力低功率密度下生长一层纳米晶金刚石层，并通过低压力低功率控制***实施控制，保证纳米晶金刚石层的生长质量，纳米晶金刚石层即为纳米晶金刚石成核层。
优选地，所述磁控溅射方法包括以下步骤：
S1：将待溅射的蓝宝石衬底送入磁控溅射设备的装卸腔，并在装卸腔内设置匀速旋转放置架，待溅射的蓝宝石衬底固定在旋转放置架上，匀速旋转放置架将蓝宝石衬底旋转入磁控溅射设备内的反应仓内，并在反应仓内充入氩气；
S2：5-7秒后，对金属IR靶材施加1600W～1800W的第一DC偏压，进行起辉；
S3：5-7秒后，停止通入氩气；
S4：16-18秒后,将S2中的第一DC偏压增加至第二DC偏压，第二偏压的功率为10000W-20000W，在下电极上以1000W/s-3000W/s的速率加载RF偏压，RF偏压的功率为1000W-1500W；
S5：10-14秒后，停止施加DC偏压及RF偏压，继续向反应腔室中通入氩气，完成产品冷却，得到金属IR层。
优选地，所述低压力低功率控制***包括检测装置和调节装置，且检测装置包括压力检测器和功率检测仪。
优选地，所述剖光***包括金刚石剖光机和吸尘机，且吸尘机的输入端插接有弹簧式塑料软管，弹簧式塑料软管远离吸尘机的一端插接有聚风罩，吸尘机的输出端插接有导尘管，导尘管远离吸尘机的一端插接有集渣箱。
本发明的有益效果为：
1、使用微波等离子体化学气相淀积设备在蓝宝石/Ir基底上的纳米晶金刚石层作为单晶生长的成核层，实现大面积单晶金刚石的低成本生长，可用于生长英寸级的大面积单晶金刚石。
2、通过设置表面镀粗糙度检测仪，能够实时检测蓝宝石衬底单面剖光的光滑度，为后续制备打下了良好的基础，同时设置吸尘机和集渣箱，能够将剖光后产生的废渣集中处理，避免了环境污染和资源浪费。
附图说明
图1为本发明提出的一种CVD单晶金刚石异质外延衬底的结构示意图；
图2为本发明提出的一种CVD单晶金刚石异质外延衬底结构的制备方法示意图。
图中：1纳米晶金刚石成核层、2金属IR层、3蓝宝石衬底。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。
参照图1，一种CVD单晶金刚石异质外延衬底的结构，包括蓝宝石衬底3，蓝宝石衬底3的顶部外壁设置有金属IR层2，且金属IR层2的顶部外壁设置有纳米晶金刚石成核层1。
参照图2，一种CVD单晶金刚石异质外延衬底结构的制备方法，包括以下步骤：
S1：在蓝宝石衬底3的顶部外壁通过剖光***进行单面剖光，并通过表面粗糙度检测仪进行粗糙度检测，若蓝宝石衬底单面剖光不合格时则继剖光，直至合格，同时通过吸尘设备吸取废渣；
S2：使用磁控溅射方法，在S1中单面剖光后的蓝宝石衬底3的外壁淀积一层厚度为100-300nm的金属IR层2；
S3：在金属IR层2上使用微波等离子体化学气相淀积设备低压力低功率密度下生长一层纳米晶金刚石层，并通过低压力低功率控制***实施控制，保证纳米晶金刚石层的生长质量，纳米晶金刚石层即为纳米晶金刚石成核层1。
本发明中，磁控溅射方法包括以下步骤：
S1：将待溅射的蓝宝石衬底3送入磁控溅射设备的装卸腔，并在装卸腔内设置匀速旋转放置架，待溅射的蓝宝石衬底3固定在旋转放置架上，匀速旋转放置架将蓝宝石衬底3旋转入磁控溅射设备内的反应仓内，并在反应仓内充入氩气；
S2：5-7秒后，对金属IR靶材施加1600W～1800W的第一DC偏压，进行起辉；
S3：5-7秒后，停止通入氩气；
S4：16-18秒后,将S2中的第一DC偏压增加至第二DC偏压，第二偏压的功率为10000W-20000W，在下电极上以1000W/s-3000W/s的速率加载RF偏压，RF偏压的功率为1000W-1500W；
S5：10-14秒后，停止施加DC偏压及RF偏压，继续向反应腔室中通入氩气，完成产品冷却，得到金属IR层2。
本发明中，低压力低功率控制***包括检测装置和调节装置，且检测装置包括压力检测器和功率检测仪，剖光***包括金刚石剖光机和吸尘机，且吸尘机的输入端插接有弹簧式塑料软管，弹簧式塑料软管远离吸尘机的一端插接有聚风罩，吸尘机的输出端插接有导尘管，导尘管远离吸尘机的一端插接有集渣箱，在蓝宝石衬底3剖光时，吸尘机实时工作，将剖光产生的灰尘通过弹簧式塑料软管和导尘管引入至集渣箱内，避免环境污染，剖光后，表面粗糙度检测仪检测剖光后的蓝宝石衬底3的光滑度，避免剖光不合格的蓝宝石衬底3直接进行磁控溅射，造成CVD单晶金刚石异质外延衬底制备质量下降。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，根据本发明的技术方案及其发明构思加以等同替换或改变，都应涵盖在本发明的保护范围之内。

Claims (5)

1.一种CVD单晶金刚石异质外延衬底的结构，包括蓝宝石衬底(3)，其特征在于，所述蓝宝石衬底(3)的顶部外壁设置有金属IR层(2)，且金属IR层(2)的顶部外壁设置有纳米晶金刚石成核层(1)。
2.一种CVD单晶金刚石异质外延衬底结构的制备方法，其特征在于，包括以下步骤：
S1：在蓝宝石衬底(3)的顶部外壁通过剖光***进行单面剖光，并通过表面粗糙度检测仪进行粗糙度检测，若蓝宝石衬底单面剖光不合格时则继剖光，直至合格，同时通过吸尘设备吸取废渣；
S2：使用磁控溅射方法，在S1中单面剖光后的蓝宝石衬底(3)的外壁淀积一层厚度为100-300nm的金属IR层(2)；
S3：在金属IR层(2)上使用微波等离子体化学气相淀积设备低压力低功率密度下生长一层纳米晶金刚石层，并通过低压力低功率控制***实施控制，保证纳米晶金刚石层的生长质量，纳米晶金刚石层即为纳米晶金刚石成核层(1)。
3.根据权利要求2所述的一种CVD单晶金刚石异质外延衬底结构的制备方法，其特征在于，所述磁控溅射方法包括以下步骤：
S1：将待溅射的蓝宝石衬底(3)送入磁控溅射设备的装卸腔，并在装卸腔内设置匀速旋转放置架，待溅射的蓝宝石衬底(3)固定在旋转放置架上，匀速旋转放置架将蓝宝石衬底(3)旋转入磁控溅射设备内的反应仓内，并在反应仓内充入氩气；
S2：5-7秒后，对金属IR靶材施加1600W～1800W的第一DC偏压，进行起辉；
S3：5-7秒后，停止通入氩气；
S4：16-18秒后,将S2中的第一DC偏压增加至第二DC偏压，第二偏压的功率为10000W-20000W，在下电极上以1000W/s-3000W/s的速率加载RF偏压，RF偏压的功率为1000W-1500W；
S5：10-14秒后，停止施加DC偏压及RF偏压，继续向反应腔室中通入氩气，完成产品冷却，得到金属IR层(2)。
4.根据权利要求2所述的一种CVD单晶金刚石异质外延衬底结构的制备方法，其特征在于，所述低压力低功率控制***包括检测装置和调节装置，且检测装置包括压力检测器和功率检测仪。
5.根据权利要求2所述的一种CVD单晶金刚石异质外延衬底结构的制备方法，其特征在于，所述剖光***包括金刚石剖光机和吸尘机，且吸尘机的输入端插接有弹簧式塑料软管，弹簧式塑料软管远离吸尘机的一端插接有聚风罩，吸尘机的输出端插接有导尘管，导尘管远离吸尘机的一端插接有集渣箱。
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CN111321466A (zh) * 2020-03-25 2020-06-23 武汉大学 大尺寸单晶金刚石生长方法及生长用复合基底
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