CN108695414A - On piece infrared LED and preparation method based on two-dimensional material hetero-junctions - Google Patents
On piece infrared LED and preparation method based on two-dimensional material hetero-junctions Download PDFInfo
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- CN108695414A CN108695414A CN201810485223.XA CN201810485223A CN108695414A CN 108695414 A CN108695414 A CN 108695414A CN 201810485223 A CN201810485223 A CN 201810485223A CN 108695414 A CN108695414 A CN 108695414A
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- 238000000034 method Methods 0.000 claims description 43
- 229910021389 graphene Inorganic materials 0.000 claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims description 20
- 239000011733 molybdenum Substances 0.000 claims description 20
- 238000012546 transfer Methods 0.000 claims description 14
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 14
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 12
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- 229910052710 silicon Inorganic materials 0.000 abstract description 26
- 239000010703 silicon Substances 0.000 abstract description 26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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Abstract
Present disclose provides a kind of on piece infrared LEDs based on two-dimensional material hetero-junctions, include successively from bottom to top:Substrate, the first two-dimentional heat insulating lamina, the first high conductivity dimensional thinlayer, N-type dimensional thinlayer, direct band gap dimensional thinlayer, p-type dimensional thinlayer, the second high conductivity dimensional thinlayer, the second two-dimentional heat insulating lamina.Lattice mismatch issue is not present in the disclosure, and can centainly be adjusted to emission wavelength by changing the thickness of active area thin layer, can be integrated with silicon based photon device;And limitation to active area carrier can be enhanced, improve radiation efficiency;The light source that can solve the problems, such as silicon substrate on-chip optical interconnection simultaneously, to further realize the optic communication of on piece.
Description
Technical field
This disclosure relates to the production field of photoelectric field light emitting diode, more particularly to it is a kind of based on two-dimensional material hetero-junctions
On piece infrared LED and preparation method.
Background technology
The discovery of graphene be not only brought to theoretical physicist it is pleasantly surprised, more allow people it is excited be it mechanics,
The everyways such as electricity, optics have unique and excellent physical property.It is presently found most thin and is also most hard
Nano material, its band gap are zero, but are more than 97% to the transmissivity of light, and its electron mobility is more than under room temperature
15000cm2V-1s-1So that graphene has huge application prospect in the fields such as high-frequency electron device and transparent electrode.It is another
Zero band gap of aspect, graphene also limits its application in electronics, photoelectric field, so the two-dimentional material of large quantities of class graphenes
Material enters the visual field of researcher, they have respective advantageous property, such as belongs to the black phosphorus and transition gold of two-dimensional semiconductor
Belong to chalcogenide, belongs to the boron nitride etc. of two-dimentional insulator.
All there are one common features for all two-dimensional materials, that is, and they are all Van der Waals stratified materials, that is,
It says, the atom in face is interacted by stronger chemical bond, then is stacked by comparing weak Van der Waals force interaction
Bodies.Structure determines property, so two-dimensional material has the advantage that many body materials do not have, particularly, and first, by
In quantum limitation effect in one dimension so that the electronic structure of two-dimensional material can change, so as to according to need
It is adjusted;Secondly, dangling bonds are not present in the surface of two-dimensional material, can by Van der Waals hetero-junctions by two kinds even
The property of multiple material is combined, and lattice mismatch issue is not present;Again, its volume and size are small, are worn intelligently
It wears, have good application prospect on flexible substrate device.In the disclosure, two-dimensional material these advantages have all been used.
On the other hand, with the development of integrated circuit, the integrated level of integrated circuit also always according to Moore's Law rapidly to
Preceding development.However, with the continuous diminution of characteristic size and being continuously increased for integrated level, although delay and the work(of single transistor
Consume smaller and smaller, but the delay of interconnection line and power consumption are increasing and gradually occupy leading.Then people invest sight
On-chip optical interconnection.Light network can solve that intrinsic bottleneck is electrically interconnected, and have many advantages, such as high bandwidth, anti-interference and low-power consumption, can
For clock signal transmission in System on Chip/SoC, solve the problems, such as signal interfere with each other and clock skew.However, silicon substrate light is mutual so far
Even there is a very serious defects, that is, the problem of on piece light source, because silicon is indirect bandgap semiconductor, shine effect
Rate is especially low, can not be integrated.So generally require using the light source outside grating introducing, but this method necessarily increases
The complexity of technique and the difficulty of encapsulation.
Invention content
(1) technical problems to be solved
Present disclose provides a kind of on piece infrared LEDs and preparation method based on two-dimensional material hetero-junctions, at least partly
Solve technical problem set forth above.
(2) technical solution
According to one aspect of the disclosure, provide a kind of on piece infrared LED based on two-dimensional material hetero-junctions, from lower and
On include successively:Substrate, the first two-dimentional heat insulating lamina, the first high conductivity dimensional thinlayer, N-type dimensional thinlayer, direct band gap two
Tie up thin layer, p-type dimensional thinlayer, the second high conductivity dimensional thinlayer, the second two-dimentional heat insulating lamina.
In the disclosure some embodiments, the emission wavelength of the on piece infrared LED is thin by changing direct band gap two dimension
The thickness of layer is adjusted.
In the disclosure some embodiments, the energy gap of the direct band gap dimensional thinlayer is less than the N-type two simultaneously
Tie up the energy gap of material and p-type dimensional thinlayer material.
In the disclosure some embodiments, the direct band gap dimensional thinlayer material is black phosphorus.
In the disclosure some embodiments, the N-type dimensional thinlayer material is tungsten sulfide;The p-type dimensional thinlayer material
For selenizing molybdenum.
In the disclosure some embodiments, the material of the substrate is silicon materials.
In the disclosure some embodiments, the material of the described first two-dimentional heat insulating lamina and the second two-dimentional heat insulating lamina is nitrogen
Change boron.
In the disclosure some embodiments, the described first high conductance dimensional thinlayer and the second conductivity dimensional thinlayer material
For graphene.
A kind of system of the on piece infrared LED based on two-dimensional material hetero-junctions another aspect of the present disclosure provides
Preparation Method includes the following steps:
Two-dimentional heat insulating lamina is prepared on substrate;
High conductivity dimensional thinlayer is transferred to by the method for transfer on two-dimentional heat insulating lamina;
N-type dimensional thinlayer is transferred on high conductivity dimensional thinlayer;
Direct band gap dimensional thinlayer is transferred on N-type dimensional thinlayer;
P-type dimensional thinlayer is transferred on direct band gap dimensional thinlayer;
High conductivity dimensional thinlayer is transferred on p-type dimensional thinlayer;
Two-dimentional heat insulating lamina is transferred on high conductivity dimensional thinlayer.
In the disclosure some embodiments, the transfer method is the wet method turn that dry method is shifted or carried out using PMMA
It moves.
(3) advantageous effect
It can be seen from the above technical proposal that the disclosure is based on the on piece infrared LED of two-dimensional material hetero-junctions and preparation side
Method at least has the advantages that one of them:
(1) light emitting diode is all based on New Two Dimensional material, lattice mismatch issue is not present, and can be active by changing
The thickness of area's thin layer centainly adjusts emission wavelength, can be integrated with silicon based photon device;
(2) black phosphorus is clipped in centre using the energy gap Transition-metal dichalcogenide thin layer bigger than black phosphorus, to
Double heterojunction is formed, the limitation to active area carrier is enhanced, improves radiation efficiency;
(3) method for using New Two Dimensional material preparation on piece infrared LED, it is simple for process easy to operate, silicon can be solved
The light source problem of base on-chip optical interconnection, to further realize the optic communication of on piece.
Description of the drawings
Fig. 1 is the structural schematic diagram of on piece infrared LED of the embodiment of the present disclosure based on New Two Dimensional material.
Fig. 2 is the heterogeneous of on piece infrared LED active area sandwich structure of the embodiment of the present disclosure based on New Two Dimensional material
Tie energy band schematic diagram.
Fig. 3 is the method flow diagram of on piece infrared LED of the embodiment of the present disclosure based on New Two Dimensional material.
[Embodiment of the present disclosure main element symbol description in attached drawing]
11, substrate;12, the first two-dimentional heat insulating lamina
13, the first high conductivity dimensional thinlayer;14, N-type dimensional thinlayer
15, direct band gap dimensional thinlayer;16, p-type dimensional thinlayer
17, the second high conductivity dimensional thinlayer;18, the second two-dimentional heat insulating lamina
Specific implementation mode
Present disclose provides a kind of on piece infrared LEDs and preparation method based on two-dimensional material hetero-junctions, double by being formed
Hetero-junctions enhances the limitation to active area carrier, improves radiation efficiency.And preparation method has simple for process, no lattice
The advantages that mismatch problems, emission wavelength can be adjusted using black phosphorus thickness, and be expected to silicon based photon integrated chip, to carry
Light source on feed can solve the problems, such as the light source of silicon substrate on-chip optical interconnection.
To make the purpose, technical scheme and advantage of the disclosure be more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Disclosure some embodiments will be done with reference to appended attached drawing in rear and more comprehensively describe to property, some of but not complete
The embodiment in portion will be shown.In fact, the various embodiments of the disclosure can be realized in many different forms, and should not be construed
To be limited to this several illustrated embodiment;Relatively, these embodiments are provided so that the disclosure meets applicable legal requirement.
In first exemplary embodiment of the disclosure, it is infrared to provide a kind of on piece based on two-dimensional material hetero-junctions
LED.Fig. 1 is the structural schematic diagram of on piece infrared LED of the first embodiment of the present disclosure based on two-dimensional material hetero-junctions.Such as Fig. 1 institutes
Show, on piece infrared LED of the disclosure based on two-dimensional material hetero-junctions includes successively from bottom to top:Substrate the 11, first two dimension insulation
Thin layer 12, the first high conductivity dimensional thinlayer 13, N-type dimensional thinlayer 14, direct band gap dimensional thinlayer 15, p-type dimensional thinlayer 16,
Second the 17, second two-dimentional heat insulating lamina 18 of high conductivity dimensional thinlayer.
Each component part of on piece infrared LED of the present embodiment based on two-dimensional material hetero-junctions is carried out individually below detailed
Thin description.
The material of the substrate 11 is silicon materials.It can be the coupling grating or silicon optical waveguide of silicon substrate under silicon substrate, press
Designer needs to be designed, and is made of silicon photon processing criterion technique.
Described first two-dimentional heat insulating lamina 12 is prepared on substrate 11, in the present embodiment, the described first two-dimentional heat insulating lamina
12 be boron nitride (h-BN).Described first two-dimentional heat insulating lamina 12 mainly plays insulating effect, on the one hand prevents light emitting diode from adding
On the other hand it is influence of the carrier to silicon in the two-dimensional material for prevent top to the influence of bottom silicon optical device when electric.Nitridation
Boron can be multilayer, be 5.9eV or so, to infrared light almost without absorption because the energy gap of boron nitride is big.
The first high conductance dimensional thinlayer 13 is graphene.The first high conductivity dimensional thinlayer 13 passes through transfer
Method be transferred on the first two-dimentional heat insulating lamina 12, the transfer method be dry method shift or using PMMA progress wet method
Transfer.Using the high transparency and high conductivity of graphene, using its cathode transparent as LED.Graphene can be done on demand
At pattern, guides to suitable position and do metal electrode on graphene again.
The N-type dimensional thinlayer 14 is tungsten sulfide (WS2).Tungsten sulfide mainly plays two:First, being injected into black phosphorus
Electronics, second is that its energy gap is larger, about 1.3eV, is more than the energy gap of black phosphorus, contacts to form hetero-junctions with black phosphorus
Afterwards, restriction effect can be played to the nonequilibrium carrier in black phosphorus, as shown in Fig. 2, to increase luminous efficiency.
The direct band gap dimensional thinlayer 15 is black phosphorus.Black phosphorus thin layer can only contact tungsten sulfide thin layer, and cannot contact
To graphene.Black phosphorus thin layer is used as active area in infrared LED, because it is direct band-gap semicondictor, is conducive to shine, and with
It body material (general ten layers or more) and reduces to single layer, energy gap can increase to 2eV by 0.3eV, to realize that the wavelength of LED can
Selection.The light that on-chip optical interconnection utilizes is the light of wavelength 1550nm or so, according to formula λ=1.24/Eg(μm), energy gap are answered
For 0.8eV, the value is simultaneously less than 14 material of N-type dimensional thinlayer selected and 16 material of p-type dimensional thinlayer.
The p-type dimensional thinlayer 16 is selenizing molybdenum (MoSe2).Selenizing molybdenum (the MoSe of p-type2) thin layer transfer is thin to black phosphorus
On layer, to form selenizing molybdenum/black phosphorus Van der Waals hetero-junctions.Equally, selenizing molybdenum thin layer can only be contacted with black phosphorus thin layer, Bu Nengjie
Contact the material below black phosphorus thin layer 15.On the one hand selenizing molybdenum thin layer thinks to inject hole in black phosphorus thin layer, on the other hand its taboo
Bandwidth is larger, is 1.4eV or so, also provides constraints to the nonequilibrium carrier in black phosphorus thin layer, to improve luminous efficiency,
As shown in Figure 2.
Second conductivity dimensional thinlayer 17 is transferred on p-type dimensional thinlayer 16, is used for the anode transparent as infrared LED.
Second conductivity dimensional thinlayer 17 uses graphene, can be drawn after graphical, metal electrode is done on graphene.Equally
It should be noted that graphene is only contacted with selenizing molybdenum thin layer, and cannot be with selenizing molybdenum thin layer material below.
Second two-dimentional heat insulating lamina 18 is transferred on the second high conductivity dimensional thinlayer 17, covers active area, Ke Yiqi
To protective effect, because two-dimensional material is easier to be interfered by air, especially black phosphorus is easier to aoxidize in air.
In addition, boron nitride thin layer is as insulating layer, its dangling bonds and charge trap are few, are dissipated to carrier in graphene to reduce
It penetrates
Fig. 2 is that tungsten sulfide/black phosphorus/selenizing molybdenum Van der Waals double heterojunction of on piece infrared LED active area adds forward bias
Energy band schematic diagram.The two-dimensional material pressed from both sides in double heterojunction in figure is black phosphorus thin layer, can be adjusted according to the needs of emission wavelength
Its thickness, for a length of 1550nm of light wave of communication, corresponding energy gap is 0.8eV, and the forbidden band of tungsten sulfide and selenizing molybdenum is wide
Degree is all higher than the value, and the energy gap of wherein tungsten sulfide is about 1.3eV, and the energy gap of selenizing molybdenum is about 1.4eV.Apply
When forward bias, the electronics in tungsten sulfide is injected separately into the hole in selenizing molybdenum in black phosphorus, so that the electricity in black phosphorus
Son steeply rises with hole concentration, and black phosphorus is direct band-gap semicondictor, is easy to happen direct combination.So a large amount of non-in black phosphorus
Balance electronic generates corresponding electromagnetic wave with after the direct combination of hole, and here it is the basic principles that the infrared LED shines.In addition,
Used material is all two-dimensional material, and lateral dimension is in tens microns, the problem of lattice mismatch is not present in stacking, and
Energy gap is that the black phosphorus number of plies of 0.8eV is seldom, and thickness does not exceed 5nm, and the double heterojunction is quantum well structure at this time, this
The coherence of light that sample issues is more preferable, to increase the optical bandwidth of communication.
On piece infrared LED of the present embodiment based on two-dimensional material hetero-junctions, being used as using the black phosphorus thin layer of different-thickness is had
Source region can select different emission wavelengths, and the Transition-metal dichalcogenide thin layer for recycling energy gap bigger than black phosphorus will
Black phosphorus is clipped in centre, to form double heterojunction, is enhanced the limitation to active area carrier, is improved radiation efficiency.The preparation
Method has simple for process, no lattice mismatch issue, the advantages that emission wavelength can be adjusted using black phosphorus thickness, and be expected to and
Silicon based photon integrated chip, to provide on piece light source.
So far, on piece infrared LED introduction of the first embodiment of the present disclosure based on two-dimensional material hetero-junctions finishes.
In second exemplary embodiment of the disclosure, it is infrared to provide a kind of on piece based on two-dimensional material hetero-junctions
The preparation method of LED, Fig. 3 are the method flow diagram of on piece infrared LED of the embodiment of the present disclosure based on New Two Dimensional material.Such as figure
Shown in 3, the disclosure provides a kind of method using New Two Dimensional material preparation on piece LED, includes the following steps:
Step S1:Two-dimentional heat insulating lamina 12 is prepared on substrate 11;
Step S2:High conductivity dimensional thinlayer 13 is transferred to by the method for transfer on two-dimentional heat insulating lamina 12:
Step S3:N-type dimensional thinlayer 14 is transferred on high conductivity dimensional thinlayer 13;
Step S4:Direct band gap dimensional thinlayer 15 is transferred on N-type dimensional thinlayer 14;
Step S5:P-type dimensional thinlayer 16 is transferred on direct band gap dimensional thinlayer 15;
Step S6:High conductivity dimensional thinlayer 14 is transferred on p-type dimensional thinlayer 16;
Step S7:Two-dimentional heat insulating lamina 12 is transferred on high conductivity dimensional thinlayer 13.
The transfer method is that dry method is shifted or shifted using the wet method that PMMA is carried out.
A kind of specific embodiment using New Two Dimensional material preparation on piece LED methods presented below, including:
Step S0:Silicon substrate is provided.
It can be the coupling grating or silicon optical waveguide of silicon substrate under silicon substrate, need to be designed by designer, and by silicon
Photon processing criterion technique is made.
Step S1:Boron nitride (h-BN) thin layer is covered on a silicon substrate.
Insulating effect is mainly played, to the influence of bottom silicon optical device, another party when on the one hand preventing light emitting diode from powering up
Face is influence of the carrier to silicon in the two-dimensional material for prevent top.Boron nitride can be multilayer, because of the forbidden band of boron nitride
Width is big, is 5.9eV or so, to infrared light almost without absorption.
Step S2:It is transferred graphene on boron nitride thin layer by the method that two-dimensional material shifts.
The method of the transfer can be dry method transfer or be shifted by the wet method of PMMA.Alternatively, it is also possible to nitrogenize
CVD growth graphene is directly used on boron thin layer.Using the high transparency and high conductivity of graphene, using it as the transparent of LED
Cathode.Graphene can make pattern on demand, guide to suitable position and do metal electrode on graphene again.
Step S3:By the tungsten sulfide (WS of N-type2) thin layer is transferred to by the method that two-dimensional material shifts on graphene.
Tungsten sulfide mainly plays two:First, electronics is injected into black phosphorus, second is that its energy gap is larger, about
1.3eV is more than the energy gap of black phosphorus, contacts with black phosphorus after forming hetero-junctions, can be risen to the nonequilibrium carrier in black phosphorus
To restriction effect, as shown in Fig. 2, to increase luminous efficiency.
Step S4:By on black phosphorus thin layer transfer to tungsten sulfide thin layer, to form black phosphorus/tungsten sulfide Van der Waals hetero-junctions.
Black phosphorus thin layer can only contact tungsten sulfide thin layer, and be not readily accessible to graphene.The conduct in infrared LED of black phosphorus thin layer
Active area is conducive to shine, and as body material (general ten layers or more) reduces to single layer because it is direct band-gap semicondictor,
Its energy gap can increase to 2eV by 0.3eV, to realize that the wavelength of LED may be selected.The light that on-chip optical interconnection utilizes is wavelength
The light of 1550nm or so, according to formula λ=1.24/Eg(μm), energy gap should be 0.8eV, and the value is simultaneously less than the N-type selected
Two-dimensional material and p-type two-dimensional material.
Step S5:The dimensional thinlayer of p-type is transferred on black phosphorus thin layer, it is heterogeneous to form selenizing molybdenum/black phosphorus Van der Waals
Knot.
The dimensional thinlayer by p-type is selenizing molybdenum (MoSe2) thin layer.Equally, selenizing molybdenum thin layer can only be with black phosphorus thin layer
Contact, the material being not readily accessible to below black phosphorus thin layer.On the one hand selenizing molybdenum thin layer is thought to inject hole, another party in black phosphorus thin layer
Its energy gap of face is larger, is 1.4eV or so, also provides constraints to the nonequilibrium carrier in black phosphorus thin layer, to improve
Luminous efficiency, as shown in Figure 2.
Step S6:Graphene is transferred on selenizing molybdenum thin layer.
Anode of the graphene as infrared LED can draw after graphical, metal electrode is done on graphene.Together
Sample should be noted that graphene is only contacted with selenizing molybdenum thin layer, and cannot be with selenizing molybdenum thin layer material below.
Step S7:By on boron nitride thin layer transfer to graphene, active area is covered.
Boron nitride thin layer can play a protective role, because two-dimensional material is easier to be interfered by air, especially
Black phosphorus is easier to aoxidize in air.In addition, boron nitride thin layer is as insulating layer, its dangling bonds and charge trap are few, from
And reduce the scattering to carrier in graphene.
The present embodiment carries out the preparation of on piece LED using two-dimensional material, simple for process, is easily aligned, and can be as needed
The selection of certain wavelength is carried out, realizes the integrated of silicon substrate on-chip optical interconnection light source.If suitable high quality optical resonance is added
Chamber is expected to that on piece two-dimensional material laser, further improving optical bandwidth is made.
The method for the New Two Dimensional material preparation on piece infrared LED that the disclosure proposes, which is all based on novel
Two-dimensional material is not present lattice mismatch issue, and can be carried out to emission wavelength by changing the thickness of active area black phosphorus thin layer
Certain adjustment, can be integrated with silicon based photon device, is expected to have an important influence in optical interconnection network on a silicon substrate.
Certainly, according to actual needs, the preparation method of the disclosure also includes other techniques and step, due to the same disclosure
Innovation it is unrelated, details are not described herein again.
So far, the preparation method of on piece infrared LED of the second embodiment of the present disclosure based on two-dimensional material hetero-junctions has been introduced
Finish.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that in attached drawing or saying
In bright book text, the realization method for not being painted or describing is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or replaced to it.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction of refer to the attached drawing, not is used for limiting the protection domain of the disclosure.Through attached drawing, identical element by
Same or similar reference numeral indicates.When that understanding of this disclosure may be caused to cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference mark between bracket should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough required characteristic changings according to as obtained by content of this disclosure.Specifically, all be used in specification and claim
The number of the middle content for indicating composition, reaction condition etc., it is thus understood that repaiied by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to including by specific quantity ± 10% variation in some embodiments, at some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.Before element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of specification and ordinal number such as " first ", " second ", " third " etc. used in claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used for enabling the element with certain name and another tool
There is the element of identical name that can make clear differentiation.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Row, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiment mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Those skilled in the art, which are appreciated that, to carry out adaptively the module in the equipment in embodiment
Change and they are arranged in the one or more equipment different from the embodiment.It can be the module or list in embodiment
Member or component be combined into a module or unit or component, and can be divided into addition multiple submodule or subelement or
Sub-component.Other than such feature and/or at least some of process or unit exclude each other, it may be used any
Combination is disclosed to all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so to appoint
Where all processes or unit of method or equipment are combined.Unless expressly stated otherwise, this specification (including adjoint power
Profit requires, abstract and attached drawing) disclosed in each feature can be by providing the alternative features of identical, equivalent or similar purpose come generation
It replaces.Also, in the unit claims listing several devices, several in these devices can be by same hard
Part item embodies.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the method for the disclosure should be construed to reflect following intention:It is i.e. required to protect
The disclosure of shield requires features more more than the feature being expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific implementation mode are expressly incorporated in the specific implementation mode, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose, technical solution and advantageous effect of the disclosure
It describes in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, is not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of on piece infrared LED based on two-dimensional material hetero-junctions, includes successively from bottom to top:Substrate, the first two dimension insulation
Thin layer, the first high conductivity dimensional thinlayer, N-type dimensional thinlayer, direct band gap dimensional thinlayer, p-type dimensional thinlayer, the second high conductance
Rate dimensional thinlayer, the second two-dimentional heat insulating lamina.
2. the on piece infrared LED according to claim 1 based on two-dimensional material hetero-junctions, wherein the on piece infrared LED
Emission wavelength pass through change direct band gap dimensional thinlayer thickness adjust.
3. the on piece infrared LED according to claim 1 based on two-dimensional material hetero-junctions, the direct band gap dimensional thinlayer
Energy gap simultaneously less than the N-type two-dimensional material and p-type dimensional thinlayer material energy gap.
4. the on piece infrared LED according to claim 3 based on two-dimensional material hetero-junctions, wherein the direct band gap two
Dimension layer material is black phosphorus.
5. the on piece infrared LED according to claim 4 based on two-dimensional material hetero-junctions, wherein:
The N-type dimensional thinlayer material is tungsten sulfide;
The p-type dimensional thinlayer material is selenizing molybdenum.
6. the on piece infrared LED according to claim 1 based on two-dimensional material hetero-junctions, wherein the material of the substrate
For silicon materials.
7. the on piece infrared LED according to claim 1 based on two-dimensional material hetero-junctions, wherein first two dimension is absolutely
The material of edge thin layer and the second two-dimentional heat insulating lamina is boron nitride.
8. the on piece infrared LED according to claim 1 based on two-dimensional material hetero-junctions, wherein the high electricity of described first
It is graphene to lead dimensional thinlayer and the second conductivity dimensional thinlayer material.
9. a kind of preparation method of such as on piece infrared LED of the claim 1-8 any one of them based on two-dimensional material hetero-junctions,
Include the following steps:
Two-dimentional heat insulating lamina is prepared on substrate;
High conductivity dimensional thinlayer is transferred to by the method for transfer on two-dimentional heat insulating lamina;
N-type dimensional thinlayer is transferred on high conductivity dimensional thinlayer;
Direct band gap dimensional thinlayer is transferred on N-type dimensional thinlayer;
P-type dimensional thinlayer is transferred on direct band gap dimensional thinlayer;
High conductivity dimensional thinlayer is transferred on p-type dimensional thinlayer;
Two-dimentional heat insulating lamina is transferred on high conductivity dimensional thinlayer.
10. the on piece infrared LED according to claim 9 based on two-dimensional material hetero-junctions, the transfer method is dry
Method is shifted or is shifted using the wet method that PMMA is carried out.
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| CN113972327A (en) * | 2020-07-24 | 2022-01-25 | Tcl科技集团股份有限公司 | Composite film, electroluminescent device and preparation method thereof |
| US11769859B2 (en) | 2020-11-02 | 2023-09-26 | National Tsing Hua University | Mid-infrared light emitting diode with graphene and black phosphorous layers and manufacturing method thereof, silicon photonic circuit including the mid-infrared light emitting diode and manufacturing method thereof |
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| CN105185884A (en) * | 2015-06-11 | 2015-12-23 | 上海电力学院 | Flexible two-dimensional material light emitting device |
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| CN105185884A (en) * | 2015-06-11 | 2015-12-23 | 上海电力学院 | Flexible two-dimensional material light emitting device |
| KR101668629B1 (en) * | 2015-07-16 | 2016-10-24 | 포항공과대학교 산학협력단 | Two dimensional nitride semiconductor based deep ultraviolet light emitters and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113972327A (en) * | 2020-07-24 | 2022-01-25 | Tcl科技集团股份有限公司 | Composite film, electroluminescent device and preparation method thereof |
| CN113972327B (en) * | 2020-07-24 | 2023-12-26 | Tcl科技集团股份有限公司 | Composite film, electroluminescent device and preparation method thereof |
| US11769859B2 (en) | 2020-11-02 | 2023-09-26 | National Tsing Hua University | Mid-infrared light emitting diode with graphene and black phosphorous layers and manufacturing method thereof, silicon photonic circuit including the mid-infrared light emitting diode and manufacturing method thereof |
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| CN108695414B (en) | 2020-04-21 |
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