CN108682697A - A kind of graphene/C60Laminated film ultraviolet detector and preparation method - Google Patents
A kind of graphene/C60Laminated film ultraviolet detector and preparation method Download PDFInfo
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 114
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 238000002360 preparation method Methods 0.000 title description 4
- 239000010410 layer Substances 0.000 claims abstract description 135
- 238000010521 absorption reaction Methods 0.000 claims abstract description 58
- 239000002131 composite material Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000002356 single layer Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000005411 Van der Waals force Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 11
- 230000003595 spectral effect Effects 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YWIGIVGUASXDPK-UHFFFAOYSA-N 2,7-dioctyl-[1]benzothiolo[3,2-b][1]benzothiole Chemical compound C12=CC=C(CCCCCCCC)C=C2SC2=C1SC1=CC(CCCCCCCC)=CC=C21 YWIGIVGUASXDPK-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000003483 aging Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
Abstract
One kind being based on graphene/C60The ultraviolet detector transistor of composite absorption layer, the transistor include from bottom to top gate metal layer, highly doped Si-gate, gate dielectric layer, graphene and C successively60Composite absorption layer；The highly doped Si-gate and gate dielectric layer simultaneously support graphene/C60Composite absorption layer film, the substrate as entire transistor device；Graphene/the C60Composite absorption layer is by single layer or several layer graphenes and certain thickness C60Composition；Graphene is located at C60Lower end, while as C60The template of growth；Wherein, graphene and gate dielectric layer contact make source, drain electrode at the both ends of graphene layer；Graphene and C60It is interacted by Van der Waals force, forms the heterojunction transistor with ultraviolet absorption characteristic.Can multiple ultraviolet detector transistors array be carried out to integrate.Concrete scheme the present invention provides the array system for spectral detection analysis and image recognition.
Description
Technical field
The present invention relates to one kind being based on graphene/C60The ultraviolet detector transistor (array) of composite absorption layer and preparation side
Method belongs to ultraviolet detector field.
Background technology
Based on graphene/C60The principle of the ultraviolet light detector of composite absorption layer is the photon that material absorbs ultraviolet band,
The electric signal that can be detected by external circuit is converted optical signals into, to reach the target of detection ultraviolet band optical signal.
With the development of modern science and technology, there is highly sensitive, high s/n ratio optical detector to become what people chased
Focus.Graphene is a kind of sp2The carbon atom of hydridization press benzene type arrangement monoatomic layer film, it have traditional material without
The advantages of method is compared.Such as the alkene room temperature electron mobility of graphite is up to 60000cm2V-1s-1.Simultaneously as linear energy band
Dispersion relation, graphene all there is light absorption to have especially in the saddle point of graphene energy band ultraviolet to infrared band
High ultraviolet light absorption performance so that graphene has natural ultraviolet detection advantage.However, since graphene is very thin, only
One carbon atomic layer thickness, the relatively low intrinsic photoresponse for leading to graphene-based device of whole absorbance are very low.
By the structural integrities such as plasmon, microcavity to graphene surface, its absorptance can be improved to a certain extent.
Mueller seminars (Furchi M, et al.Microcavity-integrated graphene in 2012
photodetector[J].Nano letters,2012,12(6):2773-2777.) studies have shown that combining micro-cavity structure
Graphene light absorption can increase by 20 times or more, the optical responsivity of device can increase to 21mA/W；By graphene and extinction
The high material of rate is fabricated to hetero-junctions, in conjunction with the performance of graphene high carrier mobility and the high absorptance of material, also can be obtained
It is heterogeneous to prepare a kind of graphene-PbS quantum for the high device of responsiveness, such as Frank H.L.Koppens seminars in 2012
Junction device (Konstantatos G, et al.Hybrid graphene-quantum dot phototransistors with
ultrahigh gain[J].Nature nanotechnology,2012,7(6):363.).Have benefited from the bloom of PbS quantum
Absorption characteristic, the responsiveness of device is up to 107A/W magnitudes.But the spectral absorption of PbS quantum is limited in scope, device cannot
Effective optical detection is realized in ultraviolet band.
The spectrographic detection range of detector and the spectral absorption range of light-absorption layer are closely related, and III-V semiconductors are due to tool
Have broad-band gap (>2.2eV) the characteristics of, it is can absorb the light of ultraviolet band, therefore the compound of graphene and III-V semiconductors can be made
Structure devices realize ultraviolet detector.Zhi-Min Liao groups in 2014 are prepared based on graphene-GaN composite absorption layers
Sensitive detection parts (Lin F, et al.Graphene/GaN diodes for ultraviolet and visible
photodetectors[J].Applied Physics Letters,2014,105(7):It 073103.), can be in ultraviolet band
(325nm) realizes the photoresponse of Millisecond；Also it has been reported that using photosensitive organic matter as light absorbing layer, such as Xinran in 2016
Wang groups are in the certain thickness organic matter of graphene upper surface epitaxial growth (C8-BTBT) (Liu X, et al.Epitaxial
Ultrathin Organic Crystals on Graphene for High-Efficiency Phototransistors
[J].Advanced Materials,2016,28(26):5200-5205.), which has aobvious in ultraviolet band (355nm)
The light absorption of work, the optical responsivity of device is up to 104A/W.But above-mentioned device still faces the competition of responsiveness or response speed
Problem, it is difficult to high-responsivity and response speed are realized simultaneously, and there are agings under ultraviolet light for most organic functional materials
The problems such as acceleration.
Invention content
In order to solve the above technical problems, the object of the present invention is to provide a kind of ultraviolet detector transistor, light absorption
Layer is graphene/C60Laminated film, the transistor device can not only realize stronger light absorption, Er Qietong in ultraviolet optical arena
It crosses using graphene as C60Growth templates, may be implemented large area high evenness self assembly coupling, be device array
Change provides material foundation.
The ultraviolet detector transistor (array) has higher response speed simultaneously, can be used for spectral detection, figure
The fields such as identification and image sensing.
In order to achieve the above objectives, the technical scheme is that, one kind being based on graphene/C60The ultraviolet light of composite absorption layer is visited
Survey transistor (array).The transistor (single ultraviolet detector transistor) includes from bottom to top gate metal layer, highly doped successively
Miscellaneous Si-gate, gate dielectric layer, graphene/(with) C60Composite absorption layer；The highly doped Si-gate and gate dielectric layer prop up simultaneously
Support graphene/C60Composite absorption layer film, the substrate as entire transistor device.
Graphene/the C60Composite absorption layer is by single layer or several layer graphenes and certain thickness C60(2-300nm)
Composition.Wherein, the both ends of graphene and gate dielectric layer contact, gate dielectric layer make source, drain electrode；
Further, the graphene/C60Graphene in composite absorption layer is chemical vapour deposition technique or mechanical stripping
Single layer or a few layer graphenes prepared by method, it is preferable that graphene number of plies is less than 5 layers.In above-mentioned ultraviolet detector transistor,
C60Since its stronger optical absorption characteristics is as main light absorbing layer, graphene is then since its high mobility characteristic is as current-carrying
The transmission channel of son；Usual graphene is located at C60Lower end, while as C60The template of growth；At the both ends of graphene layer point
Source electrode and drain electrode is not made, to form conducting channel.Graphene and C60It is interacted, is formed with ultraviolet by Van der Waals force
The heterojunction transistor of absorption characteristic.
Further, the graphene/C60C in composite absorption layer60Pass through organic hot evaporation, chemical vapor deposition, spin coating
The methods of prepare, graphene upper surface is deposited on by van der Waals interaction.Graphene/the C60C in composite absorption layer60
Thickness is 2-300nm.
Further, wherein the source electrode is produced in the both ends of graphene layer with described drain, to realize graphene
Target as conducting channel.
Further, the source electrode respectively includes in gold, titanium, platinum, chromium, aluminium, nickel and palladium at least upper layer and lower layer with the drain electrode
The combination of two kinds of metals.Wherein lower metal is realized and is matched with graphene work function as adhesion layer；Preferably, described
Source electrode is different from the lowest level metal of the drain electrode；
It is highly preferred that the source electrode and the thickness of the drain electrode are respectively 5-100nm, the thickness of single metal layer is at least
2nm。
Further, wherein gate dielectric layer is contacted with graphene, and gate metal is produced on the highly doped Si-gate surface, from
And facilitates the connection with external circuit and realize that field regulates and controls.
Further, the gate metal layer includes at least one layer of metal in gold, titanium, platinum, chromium, aluminium, nickel and palladium；Preferably,
The overall thickness of the gate metal layer is 5-100nm, and the thickness of single metal layer is at least 2nm.
The ultraviolet detector transistor, wherein the material of the highly doped Si-gate be highly doped N or P-type silicon material,
Its resistance value is 0.01-0.05 Ω cm-1.The material of the gate dielectric is usually silica；Preferably, it can be used and be situated between
One or more of the higher aluminium oxide of electric constant, gallium oxide, silicon nitride combine.
The material of the gate dielectric can be prepared by the methods of thermal oxide, atomic layer deposition, vapor phase epitaxial growth.
It can prepare with scale composition array distribution.
The ultraviolet detector transistor (array), in answering for the fields such as spectral detection, figure identification and image sensing
With.
It is provided by the invention above-mentioned based on graphene/C60The ultraviolet detector transistor of composite absorption layer, gate dielectric layer
The upper surface of highly doped silicon can be formed in by thermal oxidation method；Gate metal layer can be deposited on height by electron-beam vapor deposition method
Adulterate the lower surface of Si-gate；Graphene can be that chemical vapor deposition method is prepared and is transferred to by assist medium wet method of PMMA
The surface of gate dielectric layer can also be the method for being by mechanically pulling off and be transferred directly to gate dielectric layer surface；On the surface of graphene
Graphene-channel can be prepared by photoetching, plasma etching；Source electrode and drain electrode can pass through photoetching process, electron beam evaporation
It is prepared with lift-off techniques；C60It can be deposited on graphene table by the methods of organic hot evaporation, chemical vapor deposition, spin coating
Face.
Specific embodiment according to the present invention, single graphene/C60The ultraviolet detector transistor of composite absorption layer can
As unit component, it is built into the array being made of multiple devices.
Specific embodiment according to the present invention, the ultraviolet detector transistor (array), can be used for spectral detection,
Figure identifies and the fields such as image sensing.
Compared with prior art, beneficial effects of the present invention：Ultraviolet detector transistor light absorbing layer is graphene/C60It is multiple
Film is closed, which can not only realize stronger light absorption in ultraviolet optical arena, and make by using graphene
For C60Growth templates, may be implemented large area high evenness self assembly coupling, provide material base for the array of device
Plinth.The double layer of metal of electrode is different, and wherein lower metal is realized and matched with graphene work function as adhesion layer；C60It is right
Ultraviolet light has stronger absorption, therefore is based on graphene/C60The ultraviolet detector transistor of composite absorption layer is in ultraviolet band
There is stronger photoresponse；Simultaneously as C60All it is sp with graphene2Hybrid structure is interacted by Van der Waals force, Ke Yishi
The coupling of existing atomic level is conducive to interfacial charge transfer and photoelectric current detection, and high optical responsivity and faster can be achieved at the same time
Response speed can be used for the fields such as spectral detection, figure identification and image sensing.Meanwhile the preparation of entire transistor device
For journey also with traditional silicon-based transistor process compatible, this is conducive to the large-scale integrated of device and popularization.
Description of the drawings
Fig. 1 be embodiment 1 provide based on graphene/C60The longitudinal profile of the ultraviolet detector transistor of composite absorption layer
Schematic diagram.
Fig. 2 be embodiment 1 provide based on graphene/C60The ultraviolet detector transistor of composite absorption layer FET (FET,
Field Effect Transistor) schematic diagram.
Fig. 3 is the intrinsic graphene that embodiment 2 provides and growth different-thickness C60Graphene/C60Composite absorption layer exists
The ultraviolet absorption spectra to visible light wave range.
Fig. 4 be embodiment 3 provide based on graphene/C60The array that the ultraviolet detector transistor of composite absorption layer is constituted
Schematic diagram.
Specific implementation mode
The present invention is done as described below in conjunction with attached drawing：
Specific embodiment according to the present invention, any one of them ultraviolet detector transistor (array).The transistor
(single ultraviolet detector transistor) includes from bottom to top gate metal layer, highly doped Si-gate, gate dielectric layer, graphite successively
Alkene/(with) C60Composite absorption layer；The highly doped Si-gate and gate dielectric layer simultaneously support graphene/C60Composite absorption layer
Film, the substrate as entire transistor device.Graphene/the C60Composite absorption layer by single layer or several layer graphenes and
Certain thickness C60(2-300nm) is formed.Wherein, graphene and gate dielectric layer contact, the both ends of gate dielectric layer, which make, to be had
Source electrode, drain electrode；Graphene/the C60Graphene in composite absorption layer is prepared by chemical vapour deposition technique or mechanical stripping method
Single layer or a few layer graphenes, it is preferable that graphene number of plies be less than 5 layers.The source electrode with it is described drain electrode respectively include gold,
The combination of at least two metals in titanium, platinum, chromium, aluminium, nickel and palladium.Wherein lowest level metal is realized and stone as adhesion layer
Black alkene work function matching；Preferably, the source electrode is different from the lowest level metal of the drain electrode；It is highly preferred that the source electrode and
The thickness of the drain electrode is respectively 5-100nm, and the thickness of single metal layer is at least 2nm.
Specific embodiment according to the present invention, gate dielectric layer are contacted with graphene, and gate metal is produced on the height
Si-gate surface is adulterated, to the convenient connection with external circuit and realizes that field regulates and controls.
Specific embodiment according to the present invention, the gate metal layer include gold, titanium, platinum, chromium, aluminium, nickel and palladium in extremely
Few one layer of metal；Preferably, the overall thickness of the gate metal layer is at least 2nm in 5-100nm, the thickness of single metal layer.
Specific embodiment according to the present invention, the material of the highly doped Si-gate are highly doped N or P-type silicon material,
Resistance value is 0.01-0.05 Ω cm-1。
The material of specific embodiment according to the present invention, the gate dielectric is usually silica；Preferably, may be used
It is combined using one or more of the higher aluminium oxide of dielectric constant, gallium oxide, silicon nitride.The material of these gate dielectrics
It can be prepared by the methods of thermal oxide, atomic layer deposition, vapor phase epitaxial growth.
Embodiment 1：It present embodiments provides a kind of based on graphene/C60The ultraviolet detector transistor of composite absorption layer,
Its longitudinal profile schematic diagram is as shown in Figure 1.
Single ultraviolet detector transistor include successively from bottom to top gate metal layer 11, highly doped Si-gate 12 (0.5mm),
Gate dielectric layer 13, graphene/C60Composite absorption layer.
Highly doped Si-gate 12 and gate dielectric layer 13 can play support graphene/C simultaneously60The work of composite absorption layer film
With the substrate as entire transistor device.
Graphene/C60Composite absorption layer includes graphene layer 14 and C6015 (2-300nm) of layer.
Graphene layer 14 and gate dielectric layer 13 contact, and both ends make source, drain electrode；Source electrode includes source electrode upper layer metal
Layer 16 and source electrode lower metal layer 17, drain metal layer include drain electrode upper metal layers 18 and drain electrode lower metal layer 19.Wherein,
Source electrode lower metal layer 17 is different with drain electrode 19 material of lower metal layer.
It is provided in this embodiment to be based on graphene/C60The ultraviolet detector transistor of composite absorption layer can pass through following step
It prepares：
A, by the silicon chip of heavy doping (thickness 0.5mm, N-shaped or p-type, resistance value 0.01-0.05 Ω cm-1) surface passes through hot oxygen
The method of change forms the silica of 300nm, and acetone, isopropanol, deionized water are cleaned by ultrasonic 30 minutes respectively；
B, the graphene of upper single layer is shifted using PMMA as assist medium wet method in silicon chip upper surface (silica face)；
C, by one fixed width of uv-exposure photoetching or electron beam exposure photoetching making, the graphene-channel of length, oxygen etc. is used in combination
Plasma etching technology removes extra graphene；
D, photoetching making electrode pattern again passes through electron beam evaporation, lift-off techniques make metal electrode (Cr/Au
=5nm/40nm or Ti/Au=5nm/40nm or Pt/Au=5nm/40nm), including source electrode, drain electrode, grid.Preferably, source electrode
Different metals can be used with drain electrode；
E, certain thickness C is grown by the method for organic hot evaporation on the surface of graphene60(2-300nm)；
F, the transistor device to complete can pass through lead key closing process and dispatch from foreign news agency by lead at source electrode, drain electrode, grid
Road connects, as shown in Figure 2.
Embodiment 2：It present embodiments provides and is based on C60Thickness is controllable, realizes the controllable graphene/C of responsiveness60Compound suction
Receive the ultraviolet detector transistor of layer.As shown in figure 3, deposited different-thickness on the surface of graphene using organic hot evaporation method
C60Film can obtain the composite absorption layer of different absorbances.It can be precisely controlled ultraviolet by the thickness of control C60
Trap, the parameters such as quantum efficiency and responsiveness to regulate and control device.
Embodiment 3：It present embodiments provides and is based on graphene/C60The ultraviolet detector transistor composition of composite absorption layer
M n array design scheme.As shown in figure 4, above-mentioned be based on graphene/C6041 grid of ultraviolet detector transistor of composite absorption layer
Pole connects grid-control end 41 by protective resistance 43, and drain electrode connects bit line 44 by protective resistance 42, and values of channel resistance can pass through
Signal processing circuit is read.The ultraviolet detector transistor array includes that the m rows of array distribution and n arrange the multiple ultraviolet lights constructed
Crystal detection pipe 41 and associated components sequential read out in array resistance value in all transistors by peripheral signal processing circuit,
Into the detection and identification of traveling optical signal or graphical information.Other numbers and letter are the numbers that the electrode of array connects.
Claims (10)
1. one kind being based on graphene/C60The ultraviolet detector transistor of composite absorption layer, characterized in that the transistor is from bottom to top
Include gate metal layer, highly doped Si-gate, gate dielectric layer, graphene and C successively60Composite absorption layer；The highly doped silicon
Grid and gate dielectric layer simultaneously support graphene/C60Composite absorption layer film, the substrate as entire transistor device；Described
Graphene/C60Composite absorption layer is by single layer or several layer graphenes and certain thickness C60(2-300nm) is formed；Graphene position
In C60Lower end, while as C60The template of growth；Wherein, graphene and gate dielectric layer contact, at the both ends of graphene layer
Make source, drain electrode；Graphene and C60It is interacted by Van der Waals force, forms the heterogeneous crystallization with ultraviolet absorption characteristic
Body pipe.
2. according to claim 1 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, characterized in that
Graphene/the C60Graphene in composite absorption layer be the chemical vapour deposition technique single layer that either prepared by mechanical stripping method or
Several layer graphenes, 1-5 layers of graphene number of plies.
3. according to claim 1 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, characterized in that
Graphene/the C60C in composite absorption layer60It is prepared by organic hot evaporation, chemical vapor deposition, spin coating method, passes through model
Moral China force effect is deposited on graphene upper surface；The graphene and C60C in composite absorption layer60Thickness is 2-300nm.
4. according to claim 1 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, characterized in that
The source electrode respectively includes at least combination of two kinds of metals of upper layer and lower layer in gold, titanium, platinum, chromium, aluminium, nickel and palladium with the drain electrode；
The source electrode is different from the lowest level metal of the drain electrode.
5. according to claim 1 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, characterized in that
The source electrode and the thickness of the drain electrode are respectively 5-100nm, and the thickness of single metal layer is at least 2nm.
6. according to claim 1 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, characterized in that
Wherein gate dielectric layer is contacted with graphene, and gate metal is produced on the highly doped Si-gate surface, and the connection with external circuit is simultaneously
Realize field regulation and control.
7. according to claim 1 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, characterized in that
The gate metal layer includes at least one layer of metal in gold, titanium, platinum, chromium, aluminium, nickel and palladium；The overall thickness of the gate metal layer
Thickness for 5-100nm, single metal layer is at least 2nm.
8. according to claim 1 or claim 7 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, feature
It is the ultraviolet detector transistor, wherein the material of the highly doped Si-gate is highly doped N or P-type silicon material, electricity
Resistance value is 0.01-0.05 Ω cm-1.The material of the gate dielectric is usually silica；Preferably, it can be used dielectric normal
The combination of one or more of the higher aluminium oxide of number, gallium oxide, silicon nitride.
9. according to claim 1 or claim 7 be based on graphene/C60The ultraviolet detector transistor of composite absorption layer, feature
It is that the material of the gate dielectric can be prepared by the methods of thermal oxide, atomic layer deposition, vapor phase epitaxial growth.
10. according to one of claim 1-9 based on graphene/C60The ultraviolet detector transistor of composite absorption layer,
It is characterized in, graphene/C60The ultraviolet detector transistor of composite absorption layer forms array as unit component or prepare with scale
Distribution.
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| CN112117347A (en) * | 2020-09-04 | 2020-12-22 | 兰州空间技术物理研究所 | Space radiation detection sensor based on graphene field effect transistor |
| CN112909116A (en) * | 2021-01-18 | 2021-06-04 | 华中科技大学 | Field-effect tube photoelectric detector based on dielectric layer response |
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