CN108675259A - Pressure sensor - Google Patents
Pressure sensor Download PDFInfo
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- CN108675259A CN108675259A CN201810482862.0A CN201810482862A CN108675259A CN 108675259 A CN108675259 A CN 108675259A CN 201810482862 A CN201810482862 A CN 201810482862A CN 108675259 A CN108675259 A CN 108675259A
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- film layer
- pressure sensor
- holder
- electrode
- cavity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Abstract
The present invention provides a kind of pressure sensors, if including the substrate, holder, the film layer of dried layer and the electrode that from bottom to top set gradually, holder be equipped with cavity, electrode is located at the both ends of the film layer；The number of plies of the film layer is more than 1, and the film layer is interdigital structure.Film layer is arranged to interdigital structure by pressure sensor provided by the invention, and issuing generating layer in larger pressure moves, but not forms crackle, to enhance strain resistant ability, realize high sensitivity, wide range, high stability and high reliability pressure sensor.
Description
Technical field
The invention belongs to technical field of semiconductor device, are to be related to a kind of pressure sensor more specifically.
Background technology
With the rapid development of science and technology, human society enters the intelligent epoch of advanced IT application, pressure sensor
Very important effect is played in many application fields.Now widely used MEMS pressure sensor generally uses silicon thin film,
Due to the limitation of physical characteristics of materials, film dimensions are larger, and sensitivity is limited.Graphene is a kind of honey comb like two-dimensional structure,
By carbon atom through sp2It is formed after electron orbit hydridization, only there are one atomic thickness, and it is incomparable to possess other semi-conducting materials
Excellent properties, it is about 1TPa to have machinery and electrical properties very outstanding, Young's modulus, and maximum tension strain can reach
20%, the migration rate of carrier is high, can reach 15000cm respectively under room temperature and liquid nitrogen temperature2V-1s-1With
60000cm2V-1s-1, specific surface area is up to 2630m2/g.Therefore, graphene is a kind of good sensor material, and with
The advantage that existing semiconductor fabrication is mutually compatible with.In addition, 2010, C.R.Dean et al. has prepared hexagon by experiment
Boron nitride has and lattice constant similar in graphite.Moreover, research finds that the two-dimensional material of graphene/boron nitride composition is different
Matter structure has adjustable energy gap.
A kind of working mechanism of the pressure sensor based on two-dimensional material and its preparation process and device architecture have very high point
Connection, there are a variety of possible working mechanisms：The first is the energy gap that stress causes two-dimensional material, and then changes resistance；The
Two kinds are changes that stress causes two-dimensional material overlapping area between layers, and then change contact resistance between layers；
The third is the tunneling effect of two-dimensional material interlayer, changes resistance by changing distance between layers.
Based on above-described operation principle, there has been proposed a variety of pressure based on two-dimensional material or strain gauge knots
Structure, however, common two-dimensional material film is easy to form expendable crackle and be damaged under excessive deformation.
Invention content
The purpose of the present invention is to provide a kind of pressure sensors, it is intended to solve the feelings that film layer is easy to happen crackle damage
Condition, so that pressure sensor obtains high sensitivity, wide range, high stability and high reliability.
To achieve the above object, the technical solution adopted by the present invention is：A kind of pressure sensor is provided, including from bottom to top
If the film layer and electrode of the substrate set gradually, holder, dried layer, the holder is equipped with cavity, and the electrode is located at described
The both ends of film layer；The number of plies of the film layer is more than 1, and the film layer is interdigital structure.
Further, the material of the film layer of different layers is identical type or different types of two-dimensional material.
Further, the two-dimensional material is graphene or boron nitride.
Further, the interdigital overlapping size between the film layer of different layers is less than the spacing of two electrodes.
Further, the cavity is cube or cylinder.
Further, the material of the substrate is Si or sapphire.
Further, the material of the holder is Si or SiO2。
Further, support film layer is additionally provided between the holder and film layer, the support film layer is covered in branch
On frame and it is covered on cavity.
Further, the material of the support film layer is Si, SiO2、Al2O3Or organic polymer, thickness 0.1 μm~
Between 10 μm.
The advantageous effect of pressure sensor provided by the invention is：Compared with prior art, pressure sensor of the present invention,
Film layer is arranged to interdigital structure, the enough film layers of two-dimensional material issue generating layer in larger pressure and move, but not are formed and split
Line, to enhance strain resistant ability, realize high sensitivity, wide range, high stability and high reliability pressure sensor.
Description of the drawings
Fig. 1 is the structural schematic diagram one provided in an embodiment of the present invention without support film layer；
Fig. 2 is the structural schematic diagram two provided in an embodiment of the present invention without support film layer；
Fig. 3 is the structural schematic diagram one provided in an embodiment of the present invention for having support film layer；
Fig. 4 is the structural schematic diagram two provided in an embodiment of the present invention for having support film layer；
Fig. 5 is the structural schematic diagram of holder in Fig. 1 of the embodiment of the present invention；
Fig. 6 is the structural schematic diagram of holder in Fig. 2 of the embodiment of the present invention；
Fig. 7 is that the section view of A-A ' lines obtains the structural representation for the two-dimensional material that film layer material is identical type along Fig. 4
Figure；
Fig. 8 is that the section view of A-A ' lines obtains the structural representation for the two-dimensional material that film layer material is identical type along Fig. 2
Figure；
Fig. 9 section views of A-A ' lines along Fig. 4 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
One；
Figure 10 section views of A-A ' lines along Fig. 4 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
Two；
Figure 11 section views of A-A ' lines along Fig. 4 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
Three；
Figure 12 section views of A-A ' lines along Fig. 4 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
Four；
Figure 13 section views of A-A ' lines along Fig. 2 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
One；
Figure 14 section views of A-A ' lines along Fig. 2 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
Two；
Figure 15 section views of A-A ' lines along Fig. 2 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
Three；
Figure 16 section views of A-A ' lines along Fig. 2 obtain the structural schematic diagram that film layer material is different types of two-dimensional material
Four；
The structural schematic diagram of Figure 17 another embodiment provided in an embodiment of the present invention.
Wherein：1, substrate；2, holder；3, cavity；4, support film layer；5, film layer；6, electrode；7, the first two-dimentional material
Material；8 second two-dimensional materials.
Specific implementation mode
In order to make technical problems, technical solutions and advantages to be solved be more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
Also referring to Fig. 1-Fig. 4, now pressure sensor provided by the invention is illustrated.The pressure sensor,
If including the substrate 1, holder 2, the film layer 5 of dried layer and the electrode 6 that from bottom to top set gradually, holder 2 is equipped with cavity 3, electricity
Pole 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer 5 is interdigital structure.
Holder 2 is equipped with cavity 3, and 2 middle section of holder hollows out to form cavity 3, and electrode 6 is located at the both ends of film layer 5,
Electrode 6 is oppositely arranged.
Pressure sensor provided by the invention, compared with prior art, film layer 5 are set as interdigital structure, and film layer 5 exists
Larger pressure issues generating layer shifting, but not forms crackle, to enhance strain resistant ability, realizes high sensitivity, wide range, Gao Wen
Qualitative and high reliability pressure sensor, can be applied to the fields such as medicine, biology, environment and food.
Further, please refer to fig. 5, a kind of specific implementation mode as pressure sensor provided by the invention,
Holder 2 is that cavity 3 is equipped among cube.
Further, also referring to Fig. 6, as a kind of specific implementation mode of pressure sensor provided by the invention,
Holder 2 is two corresponding bar shaped compositions, is cavity 3 among the holder 2 of two bar shapeds composition.
Further, also referring to Fig. 7 to Fig. 8, a kind of specific implementation as pressure sensor provided by the invention
Mode, 5 material of the film layer of different layers are the two-dimensional material of identical type.
Further, also referring to Fig. 9 to Figure 16, a kind of specific implementation as pressure sensor provided by the invention
The material of mode, the film layer 5 of different layers is different types of two-dimensional material.
Further, it please refers to Fig.1 to Fig.4, as a kind of specific implementation mode of pressure sensor provided by the invention,
Two-dimensional material is that graphene or boron nitride or other two-dimensional semiconductor materials or multiple material arbitrarily combine, total layer of two-dimensional material
Number is more than 1.
Further, refering to Fig. 7 and Figure 17, as a kind of specific implementation mode of pressure sensor provided by the invention,
Interdigital overlapping size Δ L between the film layer 5 of different layers is less than the spacing of two electrodes 6.
Further, referring to Fig. 1, a kind of specific implementation mode as pressure sensor provided by the invention, cavity 3
For 3 structure of cube, cylinder or Arbitrarily shaped shells.
Further, it please refers to Fig.1 to Fig.4, as a kind of specific implementation mode of pressure sensor provided by the invention,
The material of substrate 1 is Si, sapphire or other semi-conducting materials.
Further, refering to fig. 1 to Fig. 4, as a kind of specific implementation mode of pressure sensor provided by the invention, branch
The material of frame 2 is Si, SiO2Or other semiconductors or insulating material.
Further, Fig. 3 to Fig. 4 is please referred to, as a kind of specific implementation mode of pressure sensor provided by the invention,
Support film layer 4 is additionally provided between holder 2 and film layer 5, the support film layer 4 is covered on holder 2 and is covered in cavity 3
On.
Further, Fig. 3 to Fig. 4 is please referred to, as a kind of specific implementation mode of pressure sensor provided by the invention,
The material of support film layer 4 is Si, SiO2、Al2O3Or organic polymer, thickness is between 0.1 μm~10 μm.
Embodiment 1：
If as shown in Figure 1, the film layer 5 and electrode 6 of the substrate 1 from bottom to top set gradually, holder 2, dried layer, holder 2
It is equipped with cavity 3, electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer 5 is interdigital knot
Structure.Holder 2 is that cavity 3 is equipped among cube.
5 material of the film layer of different layers is identical type or different types of two-dimensional material.
Embodiment 2：
If as shown in Fig. 2, the film layer 5 and electrode 6 of the substrate 1 from bottom to top set gradually, holder 2, dried layer, holder 2
It is equipped with cavity 3, electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer 5 is interdigital knot
Structure.Holder 2 is two corresponding bar shaped compositions, is cavity 3 among the holder 2 of two bar shapeds composition.
The material of the film layer 5 of different layers is identical type or different types of two-dimensional material.
Embodiment 3：
If as shown in figure 3,5 and of film layer of the substrate 1 from bottom to top set gradually, holder 2, support film layer 4, dried layer
Electrode 6, holder 2 are equipped with cavity 3, and electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer
5 be interdigital structure.Holder 2 is that cavity 3 is equipped among cube.
The material of the film layer 5 of different layers is identical type or different types of two-dimensional material.
Embodiment 4：
If as shown in figure 4,5 and of film layer of the substrate 1 from bottom to top set gradually, holder 2, support film layer 4, dried layer
Electrode 6, holder 2 are equipped with cavity 3, and electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer
5 be interdigital structure.Holder 2 is two corresponding bar shaped compositions, is cavity 3 among the holder 2 of two bar shapeds composition.
The material of the film layer 5 of different layers is identical type or different types of two-dimensional material.
Embodiment 5：
If as shown in fig. 7,5 and of film layer of the substrate 1 from bottom to top set gradually, holder 2, support film layer 4, dried layer
Electrode 6, holder 2 are equipped with cavity 3, and electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer
5 be interdigital structure.5 material of the film layer of different layers is the two-dimensional material of identical type.
Embodiment 6：
If as shown in figure 8, the film layer 5 and electrode 6 of the substrate 1 from bottom to top set gradually, holder 2, dried layer, holder 2
It is equipped with cavity 3, electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer 5 is interdigital knot
Structure.5 material of the film layer of different layers is the two-dimensional material of identical type, and two-dimensional material is the first two-dimensional material 7.
Embodiment 7：
As shown in Fig. 9-Figure 12, if the film of the substrate 1 from bottom to top set gradually, holder 2, support film layer 4, dried layer
Layer 5 and electrode 6, holder 2 are equipped with cavity 3, and electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 be more than 1, and
Film layer 5 is interdigital structure.The material of the film layer 5 of different layers is different types of two-dimensional material, two-dimensional material the
One two-dimensional material 7 and the second two-dimensional material 8.
Embodiment 8：
As shown in Figure 13-Figure 16, if the film layer 5 and electrode 6 of the substrate 1 from bottom to top set gradually, holder 2, dried layer,
Holder 2 is equipped with cavity 3, and electrode 6 is located at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer 5 is fork
Refer to structure.The material of the film layer 5 of different layers is different types of two-dimensional material, and two-dimensional material is the first two-dimensional material 7
With the second two-dimensional material 8.
Embodiment 9：
As shown in figure 17, if the support film layer 4 from bottom to top set gradually, the film layer 5 of dried layer and electrode 6, electrode 6
Positioned at the both ends of the film layer 5；The number of plies of film layer 5 is more than 1, and film layer 5 is interdigital structure.
5 material of the film layer of different layers is different types of two-dimensional material, and two-dimensional material is 7 He of the first two-dimensional material
Second two-dimensional material 8.
Embodiment 10：
If the film layer 5 and electrode 6 of the support film layer 4 from bottom to top set gradually, dried layer, electrode 6 is located at described thin
The both ends of film layer 5；The number of plies of film layer 5 is more than 1, and film layer 5 is interdigital structure.
5 material of the film layer of different layers is the two-dimensional material of identical type.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (9)
1. pressure sensor, it is characterised in that：If including from bottom to top set gradually substrate, holder, dried layer film layer and
Electrode, the holder are equipped with cavity, and the electrode is located at the both ends of the film layer；The number of plies of the film layer be more than 1, and
The film layer is interdigital structure.
2. pressure sensor as described in claim 1, which is characterized in that the material of the film layer of different layers is mutually of the same race
Class or different types of two-dimensional material.
3. pressure sensor as claimed in claim 2, which is characterized in that the two-dimensional material is graphene or boron nitride.
4. pressure sensor as described in claim 1, which is characterized in that interdigital overlapping between the film layer of different layers
Size is less than the spacing of two electrodes.
5. pressure sensor as described in claim 1, which is characterized in that the cavity is cube or cylinder.
6. pressure sensor as described in claim 1, which is characterized in that the material of the substrate is Si or sapphire.
7. pressure sensor as described in claim 1, which is characterized in that the material of the holder is Si or SiO2。
8. pressure sensor as described in claim 1, which is characterized in that it is thin to be additionally provided with support between the holder and film layer
Film layer, the support film layer are covered on holder and are covered on cavity.
9. pressure sensor as claimed in claim 8, which is characterized in that the material of the support film layer is Si, SiO2、
Al2O3Or organic polymer, thickness is between 0.1 μm~10 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810482862.0A CN108675259B (en) | 2018-05-18 | 2018-05-18 | Pressure sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110174197A (en) * | 2019-05-28 | 2019-08-27 | 北京旭碳新材料科技有限公司 | Graphene-based piezoresistive pressure sensor and preparation method thereof |
| CN110676169A (en) * | 2019-09-05 | 2020-01-10 | 中国电子科技集团公司第十三研究所 | Preparation method of graphene capsule-packaged transistor |
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| CN108007614A (en) * | 2017-11-14 | 2018-05-08 | 中国人民解放军陆军工程大学 | SAW Force Sensor for civil engineering monitoring |
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| CN103196962A (en) * | 2013-04-18 | 2013-07-10 | 苏州大学 | Oxidized graphene film vertical type micro-nano structured gas sensor and preparation method thereof |
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| CN110174197A (en) * | 2019-05-28 | 2019-08-27 | 北京旭碳新材料科技有限公司 | Graphene-based piezoresistive pressure sensor and preparation method thereof |
| CN110676169A (en) * | 2019-09-05 | 2020-01-10 | 中国电子科技集团公司第十三研究所 | Preparation method of graphene capsule-packaged transistor |
| CN110676169B (en) * | 2019-09-05 | 2023-02-28 | 中国电子科技集团公司第十三研究所 | Preparation method of graphene capsule-packaged transistor |
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